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Possibilities for enhanced electron-phonon interactions and high-$T_c$ superconductivity in engineered bimetallic nano-structured superlattices
Authors:
Shinjan Mandal,
Shrihari Soundararajan,
Manish Jain,
H. R. Krishnamurthy
Abstract:
We explore theoretically the properties of engineered bimetallic nano-structured superlattices where an array of nano-clusters of a simple (single band) metal are embedded periodically inside another simple metal with a different work function. The exploration is done using a simplified tight-binding model with Coulomb interactions included, as well as density functional theory. Taking arrays of "…
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We explore theoretically the properties of engineered bimetallic nano-structured superlattices where an array of nano-clusters of a simple (single band) metal are embedded periodically inside another simple metal with a different work function. The exploration is done using a simplified tight-binding model with Coulomb interactions included, as well as density functional theory. Taking arrays of "Ag" clusters of fixed sizes and configurations (when unrelaxed) embedded periodically in an "Au" matrix as an example, we show that a significant enhancement of electron-phonon interactions ensues, implying possibilities for high-$T_c$ superconductivity. The enhancement stems from a strong coupling, via Coulomb interactions, between the dipolar charge distribution that forms at the Au-Ag interfaces and the breathing and other modes of vibration of the light Ag atoms caged inside the heavier Au matrix. The interface dipoles form because of the interplay between the mismatch of the local potential seen by the conduction electrons localised in Wannier orbitals at the Ag and Au sites (the Ag sites being slightly repulsive relative to the Au sites) and the (long-range) Coulomb repulsion between electrons occupying these Wannier orbitals. We also discuss the DC transport in such systems.
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Submitted 28 August, 2024;
originally announced August 2024.
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Emergent inhomogeneity and non-locality in a graphene field-effect transistor on a near-parallel moire superlattice of transition metal dichalcogenides
Authors:
Shaili Sett,
Rahul Debnath,
Arup Singha,
Shinjan Mandal,
Jyothsna K,
Monika Bhakar,
Kenji Watanabe,
Takashi Taniguchi,
Varun Raghunathan,
Goutam Sheet,
Manish Jain,
Arindam Ghosh
Abstract:
At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on 3R stacked twisted bilayer of WSe2 at a twist angle of 2.1 degree. We observe hyster…
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At near-parallel orientation, twisted bilayer of transition metal dichalcogenides exhibit inter-layer charge transfer-driven out-of-plane ferroelectricity that may lead to unique electronic device architectures. Here we report detailed electrical transport in a dual-gated graphene field-effect transistor placed on 3R stacked twisted bilayer of WSe2 at a twist angle of 2.1 degree. We observe hysteretic transfer characteristics and an emergent charge inhomogeneity with multiple local Dirac points as the electric displacement field (D) is increased. Concomitantly, we also observe a strong non-local voltage signal at D = 0 V/nm that decreases rapidly with increasing D. A linear scaling of the non-local signal with longitudinal resistance suggests edge mode transport, which we attribute to the breaking of valley symmetry of the graphene channel due to the spatially fluctuating electric field from the moire domains of the underlying twisted WSe2. A quantitative analysis connecting the non-locality and channel inhomogeneity suggests emergence of finite-size domains in the graphene channel that modulate the charge and the valley currents simultaneously. This work underlines efficient control and impact of interfacial ferroelectricity that can trigger a new genre of devices for twistronic applications.
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Submitted 28 May, 2024;
originally announced May 2024.
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Engineering ultra-strong electron-phonon coupling and nonclassical electron transport in crystalline gold with nanoscale interfaces
Authors:
Shreya Kumbhakar,
Tuhin Kumar Maji,
Binita Tongbram,
Shinjan Mandal,
Shri Hari Soundararaj,
Banashree Debnath,
T. Phanindra Sai,
Manish Jain,
H. R. Krishnamurthy,
Anshu Pandey,
Arindam Ghosh
Abstract:
Electrical resistivity in good metals, particularly noble metals such as gold (Au), silver (Ag), or copper, increases linearly with temperature ($T$) for $T > Θ_{\mathrm{D}}$, where $Θ_{\mathrm{D}}$ is the Debye temperature. This is because the coupling ($λ$) between the electrons and the lattice vibrations, or phonons, in these metals is rather weak with $λ\sim 0.1-0.2$, and a perturbative analys…
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Electrical resistivity in good metals, particularly noble metals such as gold (Au), silver (Ag), or copper, increases linearly with temperature ($T$) for $T > Θ_{\mathrm{D}}$, where $Θ_{\mathrm{D}}$ is the Debye temperature. This is because the coupling ($λ$) between the electrons and the lattice vibrations, or phonons, in these metals is rather weak with $λ\sim 0.1-0.2$, and a perturbative analysis suffices to explain the $T$-linear electron-phonon scattering rate. In this work, we outline a new nanostructuring strategy of crystalline Au where this foundational concept of metallic transport breaks down. We show that by embedding a distributed network of ultra-small Ag nanoparticles (AgNPs) of radius $\sim1-2$ nm inside a crystalline Au shell, an unprecedented enhancement in the electron-phonon interaction, with $λ$ as high as $\approx 20$, can be achieved. This is over hundred times that of bare Au or Ag, and ten times larger than any known metal. With increasing AgNP density, the electrical resistivity deviates from $T$-linearity, and approaches a saturation to the Mott-Ioffe-Regel scale $ρ_{\mathrm{MIR}}\sim h a /e^2$ for both disorder ($T\to 0$) and phonon ($T \gg Θ_{\mathrm{D}}$)-dependent components of resistivity (here, $a=0.3$~nm, is the lattice constant of Au). This giant electron-phonon interaction, which we suggest arises from the coulomb interaction-induced coupling of conduction electrons to the localized phonon modes at the buried Au-Ag hetero-interfaces, allows experimental access to a regime of nonclassical metallic transport that has never been probed before.
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Submitted 23 May, 2024;
originally announced May 2024.
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Theoretical Insights into Inorganic Antiperovskite Nitrides (X$_3$NA; X = Mg, Sr, Ca, Ba; A = Sb, As): An Emerging Class of Materials for Photovoltaics
Authors:
Sanchi Monga,
Manjari Jain,
Claudia Draxl,
Saswata Bhattacharya
Abstract:
Antiperovskite nitrides are potential candidates for applications harvesting solar light. With a comprehensive state-of-the-art approach combining hybrid density-functional theory, many-body perturbation theory, the Wannier-Mott model, density-functional perturbation theory, and the Feynman polaron model, we explore excitonic and polaronic effects in X$_3$NA (X: Mg, Ca, Sr, Ba, A = Sb, As). For al…
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Antiperovskite nitrides are potential candidates for applications harvesting solar light. With a comprehensive state-of-the-art approach combining hybrid density-functional theory, many-body perturbation theory, the Wannier-Mott model, density-functional perturbation theory, and the Feynman polaron model, we explore excitonic and polaronic effects in X$_3$NA (X: Mg, Ca, Sr, Ba, A = Sb, As). For all of them, we uncover a significant influence of the ionic dielectric screening on the static dielectric constant. Small exciton binding energies, weak electron-phonon coupling, and high charge-carrier mobilities facilitate enhanced charge transport in Mg$_3$NSb, Sr$_3$NSb, and Ba$_3$NSb. Our results highlight the potential of these nitrides as optimal candidates for efficient photovoltaic absorbers.
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Submitted 25 April, 2024;
originally announced April 2024.
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Phonon Linewidths in Twisted Bilayer Graphene near Magic Angle
Authors:
Shinjan Mandal,
Indrajit Maity,
H. R. Krishnamurthy,
Manish Jain
Abstract:
We present a computational study of the phonon linewidths in twisted bilayer graphene arising from electron-phonon interactions and anharmonic effects. The electronic structure is calculated using distance-dependent transfer integrals based on the atomistic Slater-Koster tight-binding formalism, including electron-electron interactions treated at the Hartree level, and the phonons are calculated u…
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We present a computational study of the phonon linewidths in twisted bilayer graphene arising from electron-phonon interactions and anharmonic effects. The electronic structure is calculated using distance-dependent transfer integrals based on the atomistic Slater-Koster tight-binding formalism, including electron-electron interactions treated at the Hartree level, and the phonons are calculated using classical force fields. These ingredients are used to calculate the phonon linewidths arising from electron-phonon interactions. Furthermore, anharmonic effects on the linewidths are computed using the mode-projected velocity autocorrelation function obtained from classical molecular dynamics. We predict a moiré potential induced splitting of this mode, which arises due to contributions from high symmetry stacking regions. Our findings show that both electron-phonon and anharmonic effects have a significant impact on the linewidth of the Raman active G mode near the magic angle.
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Submitted 2 July, 2024; v1 submitted 15 February, 2024;
originally announced March 2024.
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Engineering and Revealing Dirac Strings in Spinor Condensates
Authors:
Gui-Sheng Xu,
Mudit Jain,
Xiang-Fa Zhou,
Guang-Can Guo,
Mustafa A. Amin,
Han Pu,
Zheng-Wei Zhou
Abstract:
Artificial monopoles have been engineered in various systems, yet there has been no systematic study of the singular vector potentials associated with the monopole field. We show that the Dirac string, the line singularity of the vector potential, can be engineered, manipulated, and made manifest in a spinor atomic condensate. We elucidate the connection among spin, orbital degrees of freedom, and…
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Artificial monopoles have been engineered in various systems, yet there has been no systematic study of the singular vector potentials associated with the monopole field. We show that the Dirac string, the line singularity of the vector potential, can be engineered, manipulated, and made manifest in a spinor atomic condensate. We elucidate the connection among spin, orbital degrees of freedom, and the artificial gauge, and show that there exists a mapping between the vortex filament and the Dirac string. We also devise a proposal where preparing initial spin states with relevant symmetries can result in different vortex patterns, revealing an underlying correspondence between the internal spin states and the spherical vortex structures. Such a mapping also leads to a new way of constructing spherical Landau levels, and monopole harmonics. Our observation provides insights into the behavior of quantum matter possessing internal symmetries in curved spaces.
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Submitted 9 April, 2024; v1 submitted 22 February, 2024;
originally announced February 2024.
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Electric field tunable superconductivity with competing orders in near magic-angle twisted bilayer graphene
Authors:
Ranit Dutta,
Ayan Ghosh,
Shinjan Mandal,
K. Watanabe,
T. Taniguchi,
H. R. Krishnamurthy,
Sumilan Banerjee,
Manish Jain,
Anindya Das
Abstract:
Superconductivity (SC) in twisted bilayer graphene (tBLG) has been explored by varying carrier concentrations, twist angles, and screening strength, with the aim of uncovering its origin and possible connections to strong electronic correlations in narrow bands and various resulting broken symmetries. However, the link between the tBLG band structure and the onset of SC and other orders largely re…
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Superconductivity (SC) in twisted bilayer graphene (tBLG) has been explored by varying carrier concentrations, twist angles, and screening strength, with the aim of uncovering its origin and possible connections to strong electronic correlations in narrow bands and various resulting broken symmetries. However, the link between the tBLG band structure and the onset of SC and other orders largely remains unclear. In this study, we address this crucial gap by examining in-situ band structure tuning of a near magic-angle ($θ\approx0.95^0$) tBLG device with displacement field ($D$) and reveal remarkable competition between SC and other broken symmetries. At zero $D$, the device exhibits superconducting signatures without the resistance peak at half-filling, a characteristic signature with a strong electronic correlation. As $D$ increases, the SC is suppressed, accompanied by the appearance of a resistance peak at half-filling. Hall density measurements reveal that at zero $D$, SC arises around the van Hove singularity (vHs) from an isospin or spin-valley unpolarized band. At higher $D$, the suppression of SC coincides with broken isospin symmetry near half-filling with lifted degeneracy ($g_d \sim 2$). Additionally, when SC is suppressed at higher $D$, density waves around the superconducting dome are seen. These findings, with our theoretical calculations, highlight the competition between SC and other orders, and the stabilization of the latter by the electric field enhanced nesting in the band structure of tBLG.
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Submitted 18 February, 2024;
originally announced February 2024.
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Ab initio Investigation of Thermal Transport in Insulators: Unveiling the Roles of Phonon Renormalization and Higher-Order Anharmonicity
Authors:
Soham Mandal,
Manish Jain,
Prabal K. Maiti
Abstract:
The occurrence of thermal transport phenomena is widespread, exerting a pivotal influence on the functionality of diverse electronic and thermo-electric energy-conversion devices. The traditional first-principles theory governing the thermal and thermodynamic characteristics of insulators relies on the perturbative treatment of interatomic potential and ad-hoc displacement of atoms within supercel…
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The occurrence of thermal transport phenomena is widespread, exerting a pivotal influence on the functionality of diverse electronic and thermo-electric energy-conversion devices. The traditional first-principles theory governing the thermal and thermodynamic characteristics of insulators relies on the perturbative treatment of interatomic potential and ad-hoc displacement of atoms within supercells. However, the limitations of these approaches for highly anharmonic and weakly bonded materials, along with discrepancies arising from not considering explicit finite temperature effects, highlight the necessity for a well-defined quasiparticle approach to the lattice vibrations. To address these limitations, we present a comprehensive numerical framework in this study, designed to compute the thermal and thermodynamic characteristics of crystalline semiconductors and insulators. The self-consistent phonon renormalization method we have devised reveals phonons as quasiparticles, diverging from their conventional characterization as bare normal modes of lattice vibration. The extension of the renormalization impact to interatomic force constants (IFCs) of third and fourth orders is also integrated and demonstrated. For the comprehensive physical insights, we employed an iterative solution of the Peierls-Boltzmann transport equation (PBTE) to determine thermal conductivity and carry out Helmholtz free energy calculations, encompassing anharmonicity effects up to the fourth order. In this study, we utilize our numerical framework to showcase its applicability through an examination of phonon dispersion, phonon linewidth, anharmonic phonon scattering, and temperature-dependent lattice thermal conductivity in both highly anharmonic materials (NaCl and AgI) and weakly anharmonic materials (cBN and 3C-SiC).
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Submitted 5 February, 2024;
originally announced February 2024.
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Calculation of Gilbert damping and magnetic moment of inertia using torque-torque correlation model within ab initio Wannier framework
Authors:
Robin Bajaj,
Seung-Cheol Lee,
H. R. Krishnamurthy,
Satadeep Bhattacharjee,
Manish Jain
Abstract:
Magnetization dynamics in magnetic materials are well described by the modified semiclassical Landau-Lifshitz-Gilbert (LLG) equation, which includes the magnetic damping $α$ and the magnetic moment of inertia $\mathrm{I}$ tensors as key parameters. Both parameters are material-specific and physically represent the time scales of damping of precession and nutation in magnetization dynamics. $α$ and…
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Magnetization dynamics in magnetic materials are well described by the modified semiclassical Landau-Lifshitz-Gilbert (LLG) equation, which includes the magnetic damping $α$ and the magnetic moment of inertia $\mathrm{I}$ tensors as key parameters. Both parameters are material-specific and physically represent the time scales of damping of precession and nutation in magnetization dynamics. $α$ and $\mathrm{I}$ can be calculated quantum mechanically within the framework of the torque-torque correlation model. The quantities required for the calculation are torque matrix elements, the real and imaginary parts of the Green's function and its derivatives. Here, we calculate these parameters for the elemental magnets such as Fe, Co and Ni in an ab initio framework using density functional theory and Wannier functions. We also propose a method to calculate the torque matrix elements within the Wannier framework. We demonstrate the effectiveness of the method by comparing it with the experiments and the previous ab initio and empirical studies and show its potential to improve our understanding of spin dynamics and to facilitate the design of spintronic devices.
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Submitted 1 January, 2024;
originally announced January 2024.
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Fabrication and extreme micromechanics of additive metal microarchitectures
Authors:
Sung-Gyu Kang,
Barbara Bellon,
Lalithkumar Bhaskar,
Siyuan Zhang,
Alexander Gotz,
Janis Wirth,
Benjamin Apeleo Zubiri,
Szilvia Kalacska,
Manish Jain,
Amit Sharma,
Wabe Koelmans,
Giorgio Ercolano,
Erdmann Spiecker,
Johann Michler,
Jakob Schwiedrzik,
Gerhard Dehm,
Rajaprakash Ramachandramoorthy
Abstract:
The mechanical performance of metallic metamaterials with 3-dimensional solid frames is typically a combination of the geometrical effect ("architecture") and the characteristic size effects of the base material ("microstructure"). In this study, for the first time, the temperature- and rate-dependent mechanical response of copper microlattices has been investigated. The microlattices were fabrica…
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The mechanical performance of metallic metamaterials with 3-dimensional solid frames is typically a combination of the geometrical effect ("architecture") and the characteristic size effects of the base material ("microstructure"). In this study, for the first time, the temperature- and rate-dependent mechanical response of copper microlattices has been investigated. The microlattices were fabricated via a localized electrodeposition in liquid (LEL) process which enables high-precision additive manufacturing of metal at the micro-scale. The metal microlattices possess a unique microstructure with micron sized grains that are rich with randomly oriented growth twins and near-ideal nodal connectivity. Importantly, copper microlattices exhibited unique temperature (-150 and 25 degree C) and strain rate (0.001~100 s-1) dependent deformation behavior during in situ micromechanical testing. Systematic compression tests of fully dense copper micropillars, equivalent in diameter and length to the struts of the microlattice at comparable extreme loading conditions, allow us to investigate the intrinsic deformation mechanism of copper. Combined with the post-mortem microstructural analysis, substantial shifts in deformation mechanisms depending on the temperature and strain rate were revealed. On the one hand, at room temperature (25 degree C), dislocation slip based plastic deformation occurs and leads to a localized deformation of the micropillars. On the other hand, at cryogenic temperature (-150 degree C), mechanical twinning occurs and leads to relatively homogeneous deformation of the micropillars. Based on the intrinsic deformation mechanisms of copper, the temperature and strain rate dependent deformation behavior of microlattices could be explained.
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Submitted 3 April, 2024; v1 submitted 23 November, 2023;
originally announced November 2023.
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Mott insulating negative thermal expansion perovskite TiF3
Authors:
Donal Sheets,
Kaitlin Lyszak,
Menka Jain,
Gayanath W. Fernando,
Ilya Sochnikov,
Jacob Franklin,
R. Mattias Geilhufe,
Jason N. Hancock
Abstract:
We characterize perovskite TiF_3, a material which displays significant negative thermal expansion at elevated temperatures above its cubic-to-rhombohedral structural phase transition at 330 K. We find the optical response favors an insulating state in both structural phases, which we show can be produced in density functional theory calculations only through the introduction of an on-site Coulomb…
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We characterize perovskite TiF_3, a material which displays significant negative thermal expansion at elevated temperatures above its cubic-to-rhombohedral structural phase transition at 330 K. We find the optical response favors an insulating state in both structural phases, which we show can be produced in density functional theory calculations only through the introduction of an on-site Coulomb repulsion. Analysis of the magnetic susceptibility data gives a S=1/2 local moment per Ti+3 ion and an antiferromagnetic exchange coupling. Together, these results show that TiF_3 is a strongly correlated electron system, a fact which constrains possible mechanisms of strong negative thermal expansion in the Sc_1-xTi_xF3 system. We consider the relative strength of the Jahn-Teller and electric dipole interactions in driving the structural transition.
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Submitted 14 November, 2023;
originally announced November 2023.
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Controlling Umklapp scattering in bilayer graphene moir'e superlattice
Authors:
Mohit Kumar Jat,
Shubhankar Mishra,
Harsimran Kaur Mann,
Robin Bajaj,
Kenji Watanabe,
Takashi Taniguchi,
H. R. Krishnamurthy,
Manish Jain,
Aveek Bid
Abstract:
In this Letter, we present experimental findings on electron-electron scattering in a two-dimensional moir'e heterostructure with tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around half-filling, the primary contribution to the resistance of BLG/hBN aligned superlattices arises from…
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In this Letter, we present experimental findings on electron-electron scattering in a two-dimensional moir'e heterostructure with tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around half-filling, the primary contribution to the resistance of BLG/hBN aligned superlattices arises from electron-electron Umklapp (Uee) scattering, making the resistance of graphene/hBN moir'e devices significantly larger than that of non-aligned devices (where Uee is forbidden). We quantify the strength of the Uee scattering and find that it follows a universal scaling with Fermi energy and has a non-monotonic dependence on the charge carrier density. The Uee scattering is strongly electric field tunable and affected by layer-polarization of BLG. It has a strong particle-hole asymmetry - the resistance when the chemical potential is in the conduction band is significantly lesser than when it is in the valence band, making the electron-doped regime more practical for potential applications.
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Submitted 15 February, 2024; v1 submitted 13 October, 2023;
originally announced October 2023.
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Controlling the interactions in a cold atom quantum impurity system
Authors:
Thomas Hewitt,
Tom Bertheas,
Manan Jain,
Yusuke Nishida,
Giovanni Barontini
Abstract:
We implement an experimental architecture in which a single atom of K is trapped in an optical tweezer, and is immersed in a bath of Rb atoms at ultralow temperatures. In this regime, the motion of the single trapped atom is confined to the lowest quantum vibrational levels. This realizes an elementary and fully controllable quantum impurity system. For the trapping of the K atom, we use a species…
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We implement an experimental architecture in which a single atom of K is trapped in an optical tweezer, and is immersed in a bath of Rb atoms at ultralow temperatures. In this regime, the motion of the single trapped atom is confined to the lowest quantum vibrational levels. This realizes an elementary and fully controllable quantum impurity system. For the trapping of the K atom, we use a species-selective dipole potential, that allows us to independently manipulate the quantum impurity and the bath. We concentrate on the characterization and control of the interactions between the two subsystems. To this end, we perform Feshbach spectroscopy, detecting several inter-dimensional confinement-induced Feshbach resonances for the KRb interspecies scattering length, that parametrizes the strength of the interactions. We compare our data to a theory for inter-dimensional scattering, finding good agreement. Notably, we also detect a series of p-wave resonances stemming from the underlying free-space s-wave interactions. We further determine how the resonances behave as the temperature of the bath and the dimensionality of the interactions change. Additionally, we are able to screen the quantum impurity from the bath by finely tuning the wavelength of the light that produces the optical tweezer, providing us with a new effective tool to control and minimize the interactions. Our results open a range of new possibilities in quantum simulations of quantum impurity models, quantum information, and quantum thermodynamics, where the interactions between a quantized system and the bath is a powerful yet largely underutilized resource.
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Submitted 28 May, 2024; v1 submitted 4 October, 2023;
originally announced October 2023.
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Quantum MASALA: Quantum MAterialS Ab initio eLectronic-structure pAckage
Authors:
Shri Hari Soundararaj,
Agrim Sharma,
Manish Jain
Abstract:
We present QuantumMASALA, a compact package that implements different electronic structure methods in Python. Within just 8000 lines of pure Python code, we have implemented Density Functional Theory (DFT), Time dependent Density Functional Theory (TD-DFT) and the GW Method. The program can run across multiple process cores and in Graphical Processing Units (GPU) with the help of easily-accessible…
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We present QuantumMASALA, a compact package that implements different electronic structure methods in Python. Within just 8000 lines of pure Python code, we have implemented Density Functional Theory (DFT), Time dependent Density Functional Theory (TD-DFT) and the GW Method. The program can run across multiple process cores and in Graphical Processing Units (GPU) with the help of easily-accessible Python libraries. With QuantumESPRESSO and BerkeleyGW I/O interfaces implemented, it can also be used as a substitute for small scale calculations, making it a perfect learning tool for ab initio methods. The package is aimed to provide a framework with its modular and simple code design to rapidly build and test new methods for first-principles calculation.
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Submitted 14 August, 2023;
originally announced August 2023.
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Quantum fluctuations lead to glassy electron dynamics in the good metal regime of electron doped KTaO3
Authors:
Shashank Kumar Ojha,
Sankalpa Hazra,
Surajit Bera,
Sanat Kumar Gogoi,
Prithwijit Mandal,
Jyotirmay Maity,
A. Gloskovskii,
C. Schlueter,
Smarajit Karmakar,
Manish Jain,
Sumilan Banerjee,
Venkatraman Gopalan,
Srimanta Middey
Abstract:
One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of doping. Here, we report on the discovery of glassy electron dynamics deep…
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One of the central challenges in condensed matter physics is to comprehend systems that have strong disorder and strong interactions. In the strongly localized regime, their subtle competition leads to glassy electron dynamics which ceases to exist well before the insulator-to-metal transition is approached as a function of doping. Here, we report on the discovery of glassy electron dynamics deep inside the good metal regime of an electron-doped quantum paraelectric system: KTaO$_3$. We reveal that upon excitation of electrons from defect states to the conduction band, the excess injected carriers in the conduction band relax in a stretched exponential manner with a large relaxation time, and the system evinces simple aging phenomena - a telltale sign of glassy dynamics. Most significantly, we observe a critical slowing down of carrier dynamics below 35 K, concomitant with the onset of quantum paraelectricity in the undoped KTaO$_3$. Our combined investigation using second harmonic generation technique, density functional theory and phenomenological modeling demonstrates quantum fluctuation-stabilized soft polar modes as the impetus for the glassy behavior. This study addresses one of the most fundamental questions regarding the potential promotion of glassiness by quantum fluctuations and opens a route for exploring glassy dynamics of electrons in a well-delocalized regime.
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Submitted 5 June, 2024; v1 submitted 26 June, 2023;
originally announced June 2023.
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Observation of c-axis Magnetization at Low Temperatures in Weak Ferromagnet FeBO$_3$ Reveals a Spin-Reorientation Transition
Authors:
Jacob Franklin,
Jacob Pfund,
Joshua Bedard,
Weiguo Zhang,
P. Shiv Halasyamani,
Menka Jain,
Ilya Sochnikov
Abstract:
The weak ferromagnet FeBO$_3$ is well known for being a unique system for modelling and testing magnetic dynamics primarily due to relatively simple and localized magnetic structure and its interesting spin wave dynamics. At room temperature, it has slightly canted iron moments lying in the a-b plane that result in a strong antiferromagnetic moment and a weak ferromagnetic moment, which results in…
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The weak ferromagnet FeBO$_3$ is well known for being a unique system for modelling and testing magnetic dynamics primarily due to relatively simple and localized magnetic structure and its interesting spin wave dynamics. At room temperature, it has slightly canted iron moments lying in the a-b plane that result in a strong antiferromagnetic moment and a weak ferromagnetic moment, which results in pronounced ferromagnetic and antiferromagnetic spin modes. However, some previous studies have shown unusual low-temperature behavior that suggests a phase transition. By performing low-temperature magnetization measurements, both in bulk and on the mesoscale, we have observed a low temperature magnetic texture in this material in which a large c-axis magnetization occurs. Magnetic fields along the c-axis as high as 1300 Oe were observed close to the sample surface. This presents evidence for the onset of a Morin transition or another type of spin-reorientation phase transition wherein the Fe3+ moments would acquire a c-axis component to their canting below a critical temperature. The observation of this c-axis magnetization suggests that there is a different ground state in this material than has been previously expected and could be due to as yet unexplored intricacies of the Dzyaloshinskii-Moriya interaction.
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Submitted 25 May, 2023;
originally announced May 2023.
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i-SPin 2: An integrator for general spin-s Gross-Pitaevskii systems
Authors:
Mudit Jain,
Mustafa A. Amin,
Han Pu
Abstract:
We provide an algorithm for evolving general spin-$s$ Gross-Pitaevskii / non-linear Schrödinger systems carrying a variety of interactions, where the $2s+1$ components of the `spinor' field represent the different spin-multiplicity states. We consider many nonrelativistic interactions up to quartic order in the Schrödinger field (both short and long-range, and spin-dependent and spin-independent i…
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We provide an algorithm for evolving general spin-$s$ Gross-Pitaevskii / non-linear Schrödinger systems carrying a variety of interactions, where the $2s+1$ components of the `spinor' field represent the different spin-multiplicity states. We consider many nonrelativistic interactions up to quartic order in the Schrödinger field (both short and long-range, and spin-dependent and spin-independent interactions), including explicit spin-orbit couplings. The algorithm allows for spatially varying external and/or self-generated vector potentials that couple to the spin density of the field. Our work can be used for scenarios ranging from laboratory systems such as spinor Bose-Einstein condensates (BECs), to cosmological/astrophysical systems such as self-interacting bosonic dark matter. As examples, we provide results for two different setups of spin-$1$ BECs that employ a varying magnetic field and spin-orbit coupling, respectively, and also collisions of spin-$1$ solitons in dark matter. Our symplectic algorithm is second-order accurate in time, and is extensible to the known higher-order accurate methods.
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Submitted 2 May, 2023;
originally announced May 2023.
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Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential
Authors:
Mohit Kumar Jat,
Priya Tiwari,
Robin Bajaj,
Ishita Shitut,
Shinjan Mandal,
Kenji Watanabe,
Takashi Taniguchi,
H. R. Krishnamurthy,
Manish Jain,
Aveek Bid
Abstract:
This letter presents our findings on the recursive band gap engineering of chiral fermions in bilayer graphene doubly aligned with hBN. By utilizing two interfering moiré potentials, we generate a supermoiré pattern which renormalizes the electronic bands of the pristine bilayer graphene, resulting in higher-order fractal gaps even at very low energies. These Bragg gaps can be mapped using a uniqu…
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This letter presents our findings on the recursive band gap engineering of chiral fermions in bilayer graphene doubly aligned with hBN. By utilizing two interfering moiré potentials, we generate a supermoiré pattern which renormalizes the electronic bands of the pristine bilayer graphene, resulting in higher-order fractal gaps even at very low energies. These Bragg gaps can be mapped using a unique linear combination of periodic areas within the system. To validate our findings, we used electronic transport measurements to identify the position of these gaps as functions of the carrier density and establish their agreement with the predicted carrier densities and corresponding quantum numbers obtained using the continuum model. Our work provides direct experimental evidence of the quantization of the area of quasi-Brillouin zones in supermoiré systems. It fills essential gaps in understanding the band structure engineering of Dirac fermions by a recursive doubly periodic superlattice potential.
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Submitted 4 April, 2023;
originally announced April 2023.
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Giant electromechanical response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si 100
Authors:
Sandeep Vura,
Shubham Kumar Parate,
Subhajit Pal,
Upanya Khandelwal,
Rajeev Kumar Rai,
Sri Harsha Molleti,
Vishnu Kumar,
Rama Satya Sandilya Ventrapragada,
Girish Patil,
Mudit Jain,
Ambresh Mallya,
Majid Ahmadi,
Bart Kooi,
Sushobhan Avasthi,
Rajeev Ranjan,
Srinivasan Raghavan,
Saurabh Chandorkar,
Pavan Nukala
Abstract:
Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values o…
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Lead free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (M31) at frequencies as large as 5 kHz (1.04 x 10-14 m2 per V2 at 1 kHz, and 3.87 x 10-15 m2 per V2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained even after cycling the devices >5000 times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates very well with the observed giant electrostrictive response. These films show large coefficient of thermal expansion (2.36 x 10-5/K), which along with the giant M31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films.
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Submitted 6 March, 2023;
originally announced March 2023.
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Theoretical evaluation of oxynitride, oxyfluoride and nitrofluoride perovskites with promising photon absorption properties for solar water splitting
Authors:
Manjari Jain,
Deepika Gill,
Sanchi Monga,
Saswata Bhattacharya
Abstract:
Photocatalytic water splitting represents a very promising but at the same time very challenging contribution to a clean and renewable route to produce hydrogen fuel. Developing efficient and cost-effective photocatalysts for water splitting is a growing need. For this purpose, semiconductor photocatalysts have attracted much more attention due to their stability and low manufacturing cost. Here,…
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Photocatalytic water splitting represents a very promising but at the same time very challenging contribution to a clean and renewable route to produce hydrogen fuel. Developing efficient and cost-effective photocatalysts for water splitting is a growing need. For this purpose, semiconductor photocatalysts have attracted much more attention due to their stability and low manufacturing cost. Here, we have systematically applied several state-of-the-art advanced first-principles-based methodologies, viz., hybrid density functional theory, many-body perturbation theory (G$_0$W$_0$) and density functional perturbation theory (DFPT), to understand the electronic structure properties of ABX$_2$Y perovskites. We have chosen the vast composition space of ABX$_2$Y type perovskites where A and B are cations and X and Y can be nitrogen, oxygen, or fluorine. These perovskites exhibit direct band gaps ranging from 1.6 to 3.3 eV. Further, to evaluate the feasibility of the visible light catalytic performance, we calculate the structural, electronic, and optical properties of ABX$_2$Y perovskites. In addition, from hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) mechanism, BaInO$_2$F, InSnO$_2$N, CsPbO$_2$F and LaNbN$_2$O are found as probable photocatalysts.
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Submitted 11 January, 2023;
originally announced January 2023.
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Does twist angle affect the properties of water confined inside twisted bilayer graphene?
Authors:
Jeet Majumdar,
Subhadeep Dasgupta,
Soham Mandal,
Mohd Moid,
Manish Jain,
Prabal K. Maiti
Abstract:
Graphene nanoslit pore is used for nanofluidic devices like water desalination, ion-selective channels, ionic transistors, sensing, molecular sieving, blue energy harvesting, and protein sequencing. It is a strenuous task to prepare nanofluidic devices because a small misalignment leads to a significant alteration in various properties of the devices. Here we focus on the rotational misalignment b…
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Graphene nanoslit pore is used for nanofluidic devices like water desalination, ion-selective channels, ionic transistors, sensing, molecular sieving, blue energy harvesting, and protein sequencing. It is a strenuous task to prepare nanofluidic devices because a small misalignment leads to a significant alteration in various properties of the devices. Here we focus on the rotational misalignment between two parallel graphene sheets. Using molecular dynamics simulation, we probe the structure and dynamics of monolayer water confined inside graphene nanochannels for a range of commensurate twist angles. With SPC/E and TIP4P/2005 water model, our simulations reveal the independence of equilibrium number density $(n \sim 13 nm^{-2})$ for SPC/E and $(n \sim 11.5 nm^{-2})$ for TIP4P/2005) across twists. Based on the respective densities of water models, the structure and dielectric constant are invariant of twist angles. The confined water structure at this shows square ice ordering for SPC/E water only. TIP4P/2005 shows ordering at the vicinity of a critical density $(n \sim 12.5 nm^{-2})$. The average perpendicular dielectric constant of the confined water remains anomalously low ($\sim 2$ for SPC/E and $\sim 6$ for TIP4P/2005) for studied twist angles. We find that the friction coefficient of confined water molecules varies for small twist angles while becoming independent for twists greater than $5.1^{o}$. Our results indicate that small angular misalignment will not impair the dielectric properties of monolayer water within graphene slit-pore but can significantly influence its dynamics.
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Submitted 23 December, 2022;
originally announced December 2022.
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i-SPin: An integrator for multicomponent Schrödinger-Poisson systems with self-interactions
Authors:
Mudit Jain,
Mustafa A. Amin
Abstract:
We provide an algorithm and a publicly available code to numerically evolve multicomponent Schrödinger-Poisson (SP) systems with a SO($n$) symmetry, including attractive or repulsive self-interactions in addition to gravity. Focusing on the case where the SP system represents the non-relativistic limit of a massive vector field, non-gravitational self-interactions (in particular spin-spin interact…
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We provide an algorithm and a publicly available code to numerically evolve multicomponent Schrödinger-Poisson (SP) systems with a SO($n$) symmetry, including attractive or repulsive self-interactions in addition to gravity. Focusing on the case where the SP system represents the non-relativistic limit of a massive vector field, non-gravitational self-interactions (in particular spin-spin interactions) introduce complexities related to mass and spin conservation which are not present in purely gravitational systems. We address them with an analytical solution for the `kick' step in the algorithm, where we are able to decouple the multicomponent system completely. Equipped with this analytical solution, the full field evolution is second order accurate, preserves spin and mass to machine precision, and is reversible. Our algorithm allows for an expanding universe relevant for cosmology, and the inclusion of external potentials relevant for laboratory settings.
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Submitted 19 November, 2022; v1 submitted 15 November, 2022;
originally announced November 2022.
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Electron Holographic Mapping of Structural and Electronic Reconstruction at Mono- and Bilayer Steps of h-BN
Authors:
Subakti Subakti,
Mohammadreza Daqiqshirazi,
Daniel Wolf,
Martin Linck,
Felix L. Kern,
Mitisha Jain,
Silvan Kretschmer,
Arkady V. Krasheninnikov,
Thomas Brumme,
Axel Lubk
Abstract:
Here, by making use of medium and high resolution autocorrected off-axis electron holography, we directly probe the electrostatic potential as well as in-plane and out-of-plane charge delocalization at edges and steps in multilayer hexagonal boron nitride. In combination with ab-initio calculations, the data allows to directly reveal the formation of out-of-plane covalent bonds at folded zig-zag e…
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Here, by making use of medium and high resolution autocorrected off-axis electron holography, we directly probe the electrostatic potential as well as in-plane and out-of-plane charge delocalization at edges and steps in multilayer hexagonal boron nitride. In combination with ab-initio calculations, the data allows to directly reveal the formation of out-of-plane covalent bonds at folded zig-zag edges and steps comprising two monolayers and the absence of which at monolayer steps. The technique paves the way for studying other charge (de)localization phenomena in 2D materials, e.g., at polar edges, topological edge states and defects.
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Submitted 8 October, 2022;
originally announced October 2022.
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Vacancy-Ordered Double Perovskites Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn): An Emerging Class of Thermoelectric Materials
Authors:
Preeti Bhumla,
Manjari Jain,
Sajjan Sheoran,
Saswata Bhattacharya
Abstract:
Vacancy-ordered double perovskites (A$_2$BX$_6$), being one of the environmentally friendly and stable alternatives to lead halide perovskites, have garnered considerable research attention in the scientific community. However, their thermal transport has not been explored much despite their potential applications. Here, we explore Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn) as potential thermoelectric mate…
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Vacancy-ordered double perovskites (A$_2$BX$_6$), being one of the environmentally friendly and stable alternatives to lead halide perovskites, have garnered considerable research attention in the scientific community. However, their thermal transport has not been explored much despite their potential applications. Here, we explore Cs$_2$BI$_6$ (B = Pt, Pd, Te, Sn) as potential thermoelectric materials using the state-of-the-art first-principles based methodologies, viz., density functional theory combined with many-body perturbation theory (G$_0$W$_0$) and spin-orbit coupling. %The phonon dispersion plots and Poisson's and Pugh's ratios show the dynamical and mechanical stability of this class of perovskites. The absence of polyhedral connectivity in vacancy-ordered perovskites gives rise to additional degrees of freedom leading to lattice anharmonicity. The presence of anharmonic lattice dynamics leads to strong electron-phonon coupling, which is well captured by Fröhlich mesoscopic model. % to investigate the interaction of longitudinal optical phonon modes with the carriers that strongly influence the carrier mobility. The lattice anharmonicity is further studied using {\it ab initio} molecular dynamics and electron localization function. The maximum anharmonicity is observed in Cs$_2$PtI$_6$, followed by Cs$_2$PdI$_6$, Cs$_2$TeI$_6$ and Cs$_2$SnI$_6$. Also, the computed average thermoelectric figure of merit ($zT$) for Cs$_2$PtI$_6$, Cs$_2$PdI$_6$, Cs$_2$TeI$_6$ and Cs$_2$SnI$_6$ are 0.88, 0.85, 0.95 and 0.78, respectively, which reveals their promising renewable energy applications.
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Submitted 30 April, 2023; v1 submitted 18 September, 2022;
originally announced September 2022.
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Exciton fine structure in twisted transition metal dichalcogenide heterostructures
Authors:
Sudipta Kundu,
Tomer Amit,
H. R. Krishnamurthy,
Manish Jain,
Sivan Refaely-Abramson
Abstract:
Moiré superlattices of transition metal dichalcogenide (TMD) heterostructures give rise to rich excitonic phenomena associated with the interlayer twist angle and induced changes in the involved quantum states. Theoretical calculations of excitons in such systems are typically based on model moiré potentials to mitigate the computational cost. However, an ab initio understanding of the electron-ho…
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Moiré superlattices of transition metal dichalcogenide (TMD) heterostructures give rise to rich excitonic phenomena associated with the interlayer twist angle and induced changes in the involved quantum states. Theoretical calculations of excitons in such systems are typically based on model moiré potentials to mitigate the computational cost. However, an ab initio understanding of the electron-hole coupling dominating the excitations is crucial to realize the twist-induced modifications of the optical selection rules. In this work we use many-body perturbation theory to compute and analyze the relation between twist angle and exciton properties in twisted TMD heterostructures. We present a general approach for unfolding excitonic states from the moiré Brillouin zone onto the Brillouin zones of the separate layers. Applying this method to a twisted MoS$_2$/MoSe$_2$ bilayer, we find that the optical excitation spectrum is dominated by mixed transitions between electrons and holes with different momenta in the separate monolayers, leading to unexpected and angle-dependent hybridization between interlayer and intralayer excitons. Our findings offer a design pathway for tuning exciton layer-localization in TMD heterostructures as a function of twist angle.
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Submitted 12 September, 2022;
originally announced September 2022.
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Tuning exciton complexes in twisted bilayer WSe2 at intermediate misorientation
Authors:
Rahul Debnath,
Shaili Sett,
Sudipta Kundu,
Rabindra Biswas,
Varun Raghunathan,
Manish Jain,
Arindam Ghosh,
Akshay Singh
Abstract:
Twist angle modifies the band alignment, screening, and interlayer (IL) coupling in twisted bilayers (tBLs) of transition metal dichalcogenides. Intermediate misorientation (twist angles > 15 degrees) bilayers (BLs) offer a unique opportunity to tune excitonic behavior within these concurrent physical mechanisms but are seldom studied. In this paper, we measure many-body excitonic complexes in mon…
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Twist angle modifies the band alignment, screening, and interlayer (IL) coupling in twisted bilayers (tBLs) of transition metal dichalcogenides. Intermediate misorientation (twist angles > 15 degrees) bilayers (BLs) offer a unique opportunity to tune excitonic behavior within these concurrent physical mechanisms but are seldom studied. In this paper, we measure many-body excitonic complexes in monolayer (ML), natural BL, and tBL WSe2. Neutral biexciton (XX) is observed in tBL, while being undetected in nonencapsulated ML and BL, demonstrating unique effects of disorder screening in tBLs. The XX as well as charged biexciton are robust to thermal dissociation and are controllable by electrostatic doping. Vanishing of momentum-indirect IL excitons with increasing electron doping is demonstrated in tBL, resulting from the near alignment of Q-K and K-K valleys. Intermediate misorientation samples offer a high degree of control of excitonic complexes while offering possibilities for studying exciton-phonon coupling, band alignment, and screening.
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Submitted 7 September, 2022;
originally announced September 2022.
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Electrocatalytic Study for Hydrogen Evolution Reaction on MoS$_2$/BP and MoSSe/BP in Acidic Media
Authors:
Arunima Singh,
Preeti Bhumla,
Manjari Jain,
Saswata Bhattacharya
Abstract:
Molecular hydrogen (H$_2$) production by electrochemical hydrogen evolution reaction (HER) is being actively explored for non-precious-metal based electrocatalysts that are earth-abundant and low cost like MoS$_2$. Although it is acid-stable, its applicability is limited by catalytically inactive basal plane, poor electrical transport and inefficient charge transfer at the interface. Therefore, th…
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Molecular hydrogen (H$_2$) production by electrochemical hydrogen evolution reaction (HER) is being actively explored for non-precious-metal based electrocatalysts that are earth-abundant and low cost like MoS$_2$. Although it is acid-stable, its applicability is limited by catalytically inactive basal plane, poor electrical transport and inefficient charge transfer at the interface. Therefore, the present work examines its bilayer van der Waals heterostructure (vdW HTS). The second constituent monolayer Boron Phosphide (BP) is advantageous as an electrode material owing to its chemical stability in both oxygen and water environments. Here, we have performed first-principles based calculations under the framework of density functional theory (DFT) for HER in an electrochemical double layer model with the BP monolayer, MoS$_2$/BP and MoSSe/BP vdW HTSs. The climbing image nudged elastic band method (CI-NEB) has been employed to determine the minimum energy pathways for Tafel and Heyrovsky reactions. The calculations yield that Tafel reaction shows no reaction barrier. Thereafter, for Heyrovsky reaction, we have obtained low reaction barrier in the vdW HTSs as compared to that in the BP monolayer. Subsequently, we have observed no significant difference in the reaction profile of MoS$_2$/BP and MoSSe/BP vdW HTSs in case of high coverage (25 %) and 1/3 H$^+$ concentration (conc.). However, in the case of small coverage (11 %) and 1/3 H$^+$ conc., MoSSe/BP shows feasible Heyrovsky reaction with no reaction barrier. Finally, on comparing the coverages with 1/4 H$^+$ conc., we deduce high coverage with low conc. and low coverage with high conc. to be apt for HER via Heyrovsky reaction path.
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Submitted 16 August, 2022;
originally announced August 2022.
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Fully relativistic $GW$/Bethe-Salpeter calculations in BerkeleyGW: implementation, symmetries, benchmarking, and performance
Authors:
Bradford A. Barker,
Jack Deslippe,
Johannes Lischner,
Manish Jain,
Oleg V. Yazyev,
David A. Strubbe,
Steven G. Louie,
.
Abstract:
Computing the $GW$ quasiparticle bandstructure and Bethe-Salpeter Equation (BSE) absorption spectra for materials with spin-orbit coupling has commonly been done by treating $GW$ corrections and spin-orbit coupling as separate perturbations to density-functional theory. However, accurate treatment of materials with strong spin-orbit coupling often requires a fully relativistic approach using spino…
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Computing the $GW$ quasiparticle bandstructure and Bethe-Salpeter Equation (BSE) absorption spectra for materials with spin-orbit coupling has commonly been done by treating $GW$ corrections and spin-orbit coupling as separate perturbations to density-functional theory. However, accurate treatment of materials with strong spin-orbit coupling often requires a fully relativistic approach using spinor wavefunctions in the Kohn-Sham equation and $GW$/BSE. Such calculations have only recently become available, in particular for the BSE. We have implemented this approach in the plane-wave pseudopotential $GW$/BSE code BerkeleyGW, which is highly parallelized and widely used in the electronic-structure community. We present reference results for quasiparticle bandstructures and optical absorption spectra of solids with different strengths of spin-orbit coupling, including Si, Ge, GaAs, GaSb, CdSe, Au, and Bi$_2$Se$_3$. The calculated quasiparticle band gaps of these systems are found to agree with experiment to within a few tens of meV. The absorption spectrum of GaSb calculated with the fully-relativistic $GW$-BSE captures the large spin-orbit splitting of peaks in the spectrum. For Bi$_2$Se$_3$, we find a drastic change in the low-energy bandstructure compared to that of DFT, with the fully-relativistic treatment of the $GW$ approximation correctly capturing the parabolic nature of the valence and conduction bands after including off-diagonal self-energy matrix elements. We present the detailed methodology, approach to spatial symmetries for spinors, comparison against other codes, and performance compared to spinless $GW$/BSE calculations and perturbative approaches to SOC. This work aims to spur further development of spinor $GW$/BSE methodology in excited-state research software.
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Submitted 1 June, 2022;
originally announced June 2022.
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Exploring strong and weak topological states on isostructural substitutions in TlBiSe2
Authors:
Ankita Phutela,
Preeti Bhumla,
Manjari Jain,
Saswata Bhattacharya
Abstract:
Topological Insulators (TIs) are unique materials where insulating bulk hosts linearly dispersing surface states protected by the Time-Reversal Symmetry (TRS). These states lead to dissipationless current flow, which makes this class of materials highly promising for spintronic applications. Here, we predict new TIs via high-throughput screening by employing state-of-the-art first-principles based…
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Topological Insulators (TIs) are unique materials where insulating bulk hosts linearly dispersing surface states protected by the Time-Reversal Symmetry (TRS). These states lead to dissipationless current flow, which makes this class of materials highly promising for spintronic applications. Here, we predict new TIs via high-throughput screening by employing state-of-the-art first-principles based methodologies, viz., Density Functional Theory (DFT) and many-body perturbation theory (G0W0) combined with Spin-Orbit Coupling (SOC). For this, we take a well-known 3D TI, TlBiSe2 and perform complete substitution with suitable materials at different sites to check if the obtained isostructural materials exhibit topological properties. Subsequently, we scan these materials based on SOC-induced parity inversion at Time-Reversal Invariant Momenta (TRIM). Later, to confirm the topological nature of selected materials, we plot their surface states along with calculation of Z2 invariants. Our results show that GaBiSe2 is a Strong Topological Insulator (STI). Besides, we report six Weak Topological Insulators (WTIs) viz. PbBiSe2, SnBiSe2, SbBiSe2, Bi2Se2, TlSnSe2 and PbSbSe2. We have further verified that all the reported TIs are dynamically stable showing all real phonon modes of vibration.
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Submitted 18 May, 2022;
originally announced May 2022.
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Structural and electronic properties of rare earth chromites: A computational and experimental study
Authors:
Jianhang Shi,
Gayanath W. Fernando,
Yanliu Dang,
Steven L. Suib,
Menka Jain
Abstract:
In this work, the structural, optical, and electronic properties of rare-earth perovskites of the general formula RCrO3, where R represents the rare-earth Gd, Tb, Dy, Ho, Er, and Tm, have been studied in detail. These compounds were synthesized through a facile citrate route. X-ray diffraction, Raman spectroscopy, and UV-Vis spectroscopy were used to reveal the structural evolutions in RCrO3. The…
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In this work, the structural, optical, and electronic properties of rare-earth perovskites of the general formula RCrO3, where R represents the rare-earth Gd, Tb, Dy, Ho, Er, and Tm, have been studied in detail. These compounds were synthesized through a facile citrate route. X-ray diffraction, Raman spectroscopy, and UV-Vis spectroscopy were used to reveal the structural evolutions in RCrO3. The lattice parameter, Cr3+-O2--Cr3+ bond angle, and CrO6 octahedral distortions were found to strongly depend on the ionic radii of the rare-earth element. First-principles calculations based on density-functional theory within the generalized gradient approximation (GGA) of Perdew- Burke- Ernzerhof (PBE) and strongly constrained-and-appropriately normed (SCAN) meta-GGA were also employed to calculate the structural and electronic properties of RCrO3. The ground-state energy, lattice constants, electronic structure, and density of states (DOS) of RCrO3 were calculated. These provide some insights into the electronic characteristics of the series of RCrO3 compounds. The calculated values of lattice parameters and band gaps with Hubbard U correction (SCAN+U) agree well with values measured experimentally and show more accuracy in predicting the ground-state crystal structure and band structure compared to PBE+U approximation. The band gap of RCrO3 is found to be independent of the ionic radii of the element R from both experiments and calculations
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Submitted 25 April, 2022;
originally announced April 2022.
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Metalated Porous-Organic-Polymer Renders Mustard-Gas Simulant Harmless: Core Planarity Matters
Authors:
Ratul Paul,
Chitra Sarkar,
Manjari Jain,
Shaojun Xu,
Kashmiri Borah,
Duy Quang Dao,
Chih-Wen Pao,
Saswata Bhattacharya,
John Mondal
Abstract:
The presence of open active metal sites in Metal-Organic Frameworks (MOFs) exhibit higher catalytic activity. However, rational accomplishment of MOFs in heterogeneous catalysis is limited due to coordination bonds. Recently balanced characteristic feature with combination of both the covalent bonds (structural stability) and open metal sites (single site catalysis) introduced an entirely organic…
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The presence of open active metal sites in Metal-Organic Frameworks (MOFs) exhibit higher catalytic activity. However, rational accomplishment of MOFs in heterogeneous catalysis is limited due to coordination bonds. Recently balanced characteristic feature with combination of both the covalent bonds (structural stability) and open metal sites (single site catalysis) introduced an entirely organic alternative architecture named as Metalated Porous-Organic-Polymers (M-POPs). In this contribution, we demonstrate successful construction of two Fe-POPs (Fe-Tt-POP & Fe-Rb-POP) by ternary copolymerization approach for catalytic oxidative decontamination of different sulfur-based mustard gas simulants. Fe-Tt-POP exhibited superior catalytic performance for oxidation of the thioanisole (TA) studied in terms of conversion (99% after 13 h) in comparison with Fe-Rb-POP (43% after 13h). The remarkable difference in the mechanistic pathways towards catalytic performance for oxidation of TA was investigated by in situ operando Diffuse Reflectance Infrared Fourier Transform Spectroscopy (DRIFTS) analysis, complemented by Density Functional Theory (DFT) computational study.
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Submitted 23 February, 2022;
originally announced February 2022.
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Lead Free Alloyed Double Perovskites: An Emerging Class of Materials from Many-Body Perturbation Theory
Authors:
Manjari Jain,
Manish Kumar,
Preeti Bhumla,
Saswata Bhattacharya
Abstract:
The discovery of lead free all-inorganic alloyed double perovskites have revolutionized photovoltaic research, showing promising light emitting efficiency and its tunability. However, detailed studies regarding optical, exciton, polaron and transport properties remain unexplored. Here, we report a theoretical study on the variation of carrier-lattice interaction and optoelectronic properties of pr…
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The discovery of lead free all-inorganic alloyed double perovskites have revolutionized photovoltaic research, showing promising light emitting efficiency and its tunability. However, detailed studies regarding optical, exciton, polaron and transport properties remain unexplored. Here, we report a theoretical study on the variation of carrier-lattice interaction and optoelectronic properties of pristine as well as alloyed Cs$_2$AgInCl$_6$ double perovskites. We have employed many-body perturbation theory (G$_0$W$_0$@HSE06) and density functional perturbation theory (DFPT) to compute exciton binding energy (E$_\textrm{B}$) and exciton lifetime of different alloyed double perovskites. We find that phonon scattering limits charge-carrier mobilities and thus, plays an important role in the development of high-efficiency perovskite photovoltaics. In view of this, dominant carrier-phonon scattering is observed via Fröhlich mechanism near room temperature. Moreover, we observe a noticeable increase in hole and electron mobilities on alloying. We believe that our results will be helpful to gain a better understanding of the optoelectronic properties and lattice dynamics of these double perovskites.
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Submitted 23 October, 2021;
originally announced October 2021.
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Atomic reconstruction and flat bands in strain engineered transition metal dichalcogenide bilayer moiré systems
Authors:
Sudipta Kundu,
Indrajit Maity,
Robin Bajaj,
H. R. Krishnamurthy,
Manish Jain
Abstract:
Strain-induced lattice mismatch leads to moiré patterns in homobilayer transition metal dichalcogenides (TMDs). We investigate the structural and electronic properties of such strained moiré patterns in TMD homobilayers. The moiré patterns in strained TMDs consist of several stacking domains which are separated by tensile solitons. Relaxation of these systems distributes the strain unevenly in the…
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Strain-induced lattice mismatch leads to moiré patterns in homobilayer transition metal dichalcogenides (TMDs). We investigate the structural and electronic properties of such strained moiré patterns in TMD homobilayers. The moiré patterns in strained TMDs consist of several stacking domains which are separated by tensile solitons. Relaxation of these systems distributes the strain unevenly in the moiré superlattice, with the maximum strain energy concentrating at the highest energy stackings. The order parameter distribution shows the formation of aster topological defects at the same sites. In contrast, twisted TMDs host shear solitons at the domain walls, and the order parameter distribution in these systems shows the formation of vortex defects. The strained moiré systems also show the emergence of several well-separated flat bands at both the valence and conduction band edges, and we observe a significant reduction in the band gap. The flat bands in these strained moiré superlattices provide platforms for studying the Hubbard model on a triangular lattice as well as the ionic Hubbard model on a honeycomb lattice. Furthermore, we study the localization of the wave functions corresponding to these flat bands. The wave functions localize at different stackings compared to twisted TMDs, and our results are in excellent agreement with recent spectroscopic experiments [1].
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Submitted 2 August, 2021;
originally announced August 2021.
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Extrinsic localized excitons in patterned 2D semiconductors
Authors:
D Yagodkin,
K Greben,
A Eljarrat,
S Kovalchuk,
M Ghorbani-Asl,
M Jain,
S Kretschmer,
N Severin,
J P Rabe,
A V Krasheninnikov,
C T Koch,
K I Bolotin
Abstract:
We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state,…
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We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state, which is distinguished by non-linear power dependence, survives up to room temperature and is patternable down to 20 nm resolution. We probe the response of the new exciton to the changes of electron energy, nanomechanical cleaning, and encapsulation via multiple microscopic, spectroscopic, and computational techniques. All these approaches suggest that the state does not originate from irradiation-induced structural defects or spatially non-uniform strain, as commonly assumed. Instead, we show that it is extrinsic, likely a charge transfer exciton associated with the organic substance deposited onto the 2D semiconductor. By demonstrating that structural defects are not required for the formation of localized excitons, our work opens new possibilities for further understanding of these states and using them for example in chemical sensing and quantum technologies.
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Submitted 29 March, 2022; v1 submitted 28 May, 2021;
originally announced May 2021.
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Exploring Exciton and Polaron Dominated Photo-physical Phenomena in Ruddlesden-Popper Phases of Ban+1ZrnS3n+1 (n=[1-3]) from Many Body Perturbation Theory
Authors:
Deepika Gill,
Arunima Singh,
Manjari Jain,
Saswata Bhattacharya
Abstract:
Ruddlesden-Popper (RP) phases of Ba$_{\textrm{n+1}}$Zr$_{\textrm{n}}$S$_{\textrm{3n+1}}$ (n=[1-3]) are evolved as new promising class of chalcogenide perovskites in the field of optoelectronics, especially in solar cells. However, detailed studies regarding its optical, excitonic, polaronic and transport properties are hitherto unknown. Here, we have explored the excitonic and polaronic effect in…
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Ruddlesden-Popper (RP) phases of Ba$_{\textrm{n+1}}$Zr$_{\textrm{n}}$S$_{\textrm{3n+1}}$ (n=[1-3]) are evolved as new promising class of chalcogenide perovskites in the field of optoelectronics, especially in solar cells. However, detailed studies regarding its optical, excitonic, polaronic and transport properties are hitherto unknown. Here, we have explored the excitonic and polaronic effect in RP phases of Ba$_{\textrm{n+1}}$Zr$_{\textrm{n}}$S$_{\textrm{3n+1}}$ (n=[1-3]) using several first-principles based state-of-the-art methodologies under the framework of Many Body Perturbation Theory. Unlike it's bulk counterpart, the optical and excitonic anisotropy are observed in Ba$_{\textrm{n+1}}$Zr$_{\textrm{n}}$S$_{\textrm{3n+1}}$ (n=[1-3]) RP phases. From Wannier-Mott approach, we show that in the RP phases of this class of chalcogenide perovskites, capturing the ionic contribution to the dielectric constant is important. We report significant ionic contribution and relatively smaller electron-phonon coupling constant for Ba$_{\textrm{n+1}}$Zr$_\textrm{n}$S$_{\textrm{3n+1}}$ in comparison to the bulk BaZrS$_3$. The exciton binding energy is found to be dependent on the presence of large electron-phonon coupling. The charge carrier mobility is maximum in Ba$_2$ZrS$_4$, computed employing deformation potential of the same. As per our analysis, the optical phonon modes are observed to dominate the acoustic phonon modes, leading to decrease in polaron mobility on increasing n in Ba$_{\textrm{n+1}}$Zr$_{\textrm{n}}$S$_{\textrm{3n+1}}$ (n=[1-3]).
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Submitted 8 May, 2021;
originally announced May 2021.
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Moiré induced topology and flat bands in twisted bilayer WSe$_2$: A first-principles study
Authors:
Sudipta Kundu,
Mit H. Naik,
H. R. Krishnamurthy,
Manish Jain
Abstract:
We study the influence of strong spin-orbit interaction on the formation of flat bands in relaxed twisted bilayer WSe$_2$. Flat bands, well separated in energy, emerge at the band edges for twist angles ($θ$) near 0$^{\circ}$ and 60$^{\circ}$. For $θ$ near 0$^{\circ}$, the interlayer hybridization together with a moiré potential determines the electronic structure. The bands near the valence band…
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We study the influence of strong spin-orbit interaction on the formation of flat bands in relaxed twisted bilayer WSe$_2$. Flat bands, well separated in energy, emerge at the band edges for twist angles ($θ$) near 0$^{\circ}$ and 60$^{\circ}$. For $θ$ near 0$^{\circ}$, the interlayer hybridization together with a moiré potential determines the electronic structure. The bands near the valence band edge have nontrivial topology, with Chern numbers equal to +1 or $-$1. We propose that the nontrivial topology of the first band can be probed experimentally for twist angles less than a critical angle of 3.5$^{\circ}$. For $θ$ near 60$^{\circ}$, the flattening of the bands arising from the K point of the unit cell Brillouin zone is a result of atomic rearrangements in the individual layers. Our findings on the flat bands and the localization of their wavefunctions for both ranges of $θ$ match well with recent experimental observations.
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Submitted 22 February, 2022; v1 submitted 12 March, 2021;
originally announced March 2021.
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Twister: Construction and structural relaxation of commensurate moiré superlattices
Authors:
Saismit Naik,
Mit H. Naik,
Indrajit Maity,
Manish Jain
Abstract:
Introduction of a twist between layers of two-dimensional materials which leads to the formation of a moiré pattern is an emerging pathway to tune the electronic, vibrational and optical properties. The fascinating properties of these systems is often linked to large-scale structural reconstruction of the moiré pattern. Hence, an essential first step in the theoretical study of these systems is th…
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Introduction of a twist between layers of two-dimensional materials which leads to the formation of a moiré pattern is an emerging pathway to tune the electronic, vibrational and optical properties. The fascinating properties of these systems is often linked to large-scale structural reconstruction of the moiré pattern. Hence, an essential first step in the theoretical study of these systems is the construction and structural relaxation of the atoms in the moiré superlattice. We present the Twister package, a collection of tools that constructs commensurate superlattices for any combination of 2D materials and also helps perform structural relaxations of the moiré superlattice. Twister constructs commensurate moiré superlattices using the coincidence lattice method and provides an interface to perform structural relaxations using classical forcefields.
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Submitted 15 February, 2021;
originally announced February 2021.
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Spontaneous time reversal symmetry breaking at individual grain boundaries in graphene
Authors:
Kimberly Hsieh,
Vidya Kochat,
Tathagata Biswas,
Chandra Sekhar Tiwary,
Abhishek Mishra,
Gopalakrishnan Ramalingam,
Aditya Jayaraman,
Kamanio Chattopadhyay,
Srinivasan Raghavan,
Manish Jain,
Arindam Ghosh
Abstract:
Graphene grain boundaries have attracted interest for their ability to host nearly dispersionless electronic bands and magnetic instabilities. Here, we employ quantum transport and universal conductance fluctuations (UCF) measurements to experimentally demonstrate a spontaneous breaking of time reversal symmetry (TRS) across individual GBs of chemical vapour deposited graphene. While quantum trans…
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Graphene grain boundaries have attracted interest for their ability to host nearly dispersionless electronic bands and magnetic instabilities. Here, we employ quantum transport and universal conductance fluctuations (UCF) measurements to experimentally demonstrate a spontaneous breaking of time reversal symmetry (TRS) across individual GBs of chemical vapour deposited graphene. While quantum transport across the GBs indicate spin-scattering-induced dephasing, and hence formation of local magnetic moments, below $T\lesssim 4$ K, we observe complete lifting of TRS at high carrier densities ($n \gtrsim 5\times 10^{12}$cm$^{-2}$) and low temperature ($T\lesssim 2$ K). An unprecedented thirty times reduction in the UCF magnitude with increasing doping density further supports the possibility of an emergent frozen magnetic state at the GBs. Our experimental results suggest that realistic GBs of graphene can be a promising resource for new electronic phases and spin-based applications.
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Submitted 30 March, 2021; v1 submitted 9 February, 2021;
originally announced February 2021.
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Fine-tuning the DNA conductance by intercalation of drug molecules
Authors:
Abhishek Aggarwal,
Anil Kumar Sahoo,
Saientan Bag,
Veerabhadrarao Kaliginedi,
Manish Jain,
Prabal K. Maiti
Abstract:
In this letter, we study the structure-transport property relationships of small ligand intercalated DNA molecules using a multiscale modelling approach where extensive ab-initio calculations are performed on numerous MD-simulated configurations of dsDNA and dsDNA intercalated with two different intercalators, ethidium and daunomycin. DNA conductance is found to increase by one order of magnitude…
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In this letter, we study the structure-transport property relationships of small ligand intercalated DNA molecules using a multiscale modelling approach where extensive ab-initio calculations are performed on numerous MD-simulated configurations of dsDNA and dsDNA intercalated with two different intercalators, ethidium and daunomycin. DNA conductance is found to increase by one order of magnitude upon drug intercalation due to the local unwinding of the DNA base pairs adjacent to the intercalated sites which leads to modifications of the density-of-states in the near-Fermi energy region of the ligand-DNA complex. Our study suggests that the intercalators can be used to enhance/tune the DNA conductance which opens new possibilities for their potential applications in nanoelectronics.
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Submitted 11 December, 2020;
originally announced December 2020.
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MoS$_2$ and Janus (MoSSe) Based 2D van der Waals heterostructures: Emerging Direct Z-scheme Photocatalysts
Authors:
Arunima Singh,
Manjari Jain,
Saswata Bhattacharya
Abstract:
Two-dimensional (2D) materials viz. transition metal dichalcogenides (TMD) and transition metal oxides (TMO) offer a platform that allows creation of heterostructures with a variety of properties. The optoelectronic industry has observed an upheaval in the research arena of MoS$_2$ based van der Waals (vdW) heterostructures (HTSs) and Janus structures. Therefore, interest towards these structures…
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Two-dimensional (2D) materials viz. transition metal dichalcogenides (TMD) and transition metal oxides (TMO) offer a platform that allows creation of heterostructures with a variety of properties. The optoelectronic industry has observed an upheaval in the research arena of MoS$_2$ based van der Waals (vdW) heterostructures (HTSs) and Janus structures. Therefore, interest towards these structures are backed by the selectivity in terms of electronic and optical properties. The present study investigates the photocatalytic ability of bilayer, MoS$_2$ and Janus (MoSSe) based vdW HTSs viz. MoS$_2$/TMO, MoS$_2$/TMD, MoSSe/TMO and MoSSe/TMD, by first-principles based approach under the framework of (hybrid) density functional theory (DFT) and manybody perturbation theory (GW approximation). We have considered HfS$_2$, ZrS$_2$, TiS$_2$, WS$_2$ and HfO$_2$, T-SnO$_2$, T-PtO$_2$ from the family of TMD and TMO, respectively. The photocatalytic properties of these vdW HTSs are thoroughly investigated and compared with the respective individual monolayers by visualizing their band edge alignment, electron-hole recombination rate and optical properties. Strikingly we observe that, despite most of the individual monolayers do not perform optimally as a photocatalyst, type II band edge alignment is noticed to vdW HTSs and they appear to be efficient for photocatalysis via Z-scheme. Moreover, these HTSs have also shown promising optical response in the visible region. Finally on computing electron-hole recombination rate we find MoSSe/HfS$_2$, MoSSe/TiS$_2$, MoS$_2$/T-SnO$_2$, MoS$_2$/ZrS$_2$ and MoSSe/ZrS$_2$ are probable, most efficient Z-scheme photocatalysts.
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Submitted 13 May, 2021; v1 submitted 26 October, 2020;
originally announced October 2020.
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Anharmonicity in Raman-active phonon modes in atomically thin MoS$_2$
Authors:
Suman Sarkar,
Indrajit Maity,
H. L. Pradeepa,
Goutham Nayak,
Laetitia Marty,
Julien Renard,
Johann Coraux,
Nedjma Bendiab,
Vincent Bouchiat,
Sarthak Das,
Kausik Majumdar,
Manish Jain,
Aveek Bid
Abstract:
Phonon-phonon anharmonic effects have a strong influence on the phonon spectrum; most prominent manifestation of these effects are the softening (shift in frequency) and broadening (change in FWHM) of the phonon modes at finite temperature. Using Raman spectroscopy, we studied the temperature dependence of the FWHM and Raman shift of $\mathrm{E_{2g}^1}$ and $\mathrm{A_{1g}}$ modes for single-layer…
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Phonon-phonon anharmonic effects have a strong influence on the phonon spectrum; most prominent manifestation of these effects are the softening (shift in frequency) and broadening (change in FWHM) of the phonon modes at finite temperature. Using Raman spectroscopy, we studied the temperature dependence of the FWHM and Raman shift of $\mathrm{E_{2g}^1}$ and $\mathrm{A_{1g}}$ modes for single-layer and natural bilayer MoS$_2$ over a broad range of temperatures ($8 < $T$ < 300$ K). Both the Raman shift and FWHM of these modes show linear temperature dependence for $T>100$ K, whereas they become independent of temperature for $T<100$ K. Using first-principles calculations, we show that three-phonon anharmonic effects intrinsic to the material can account for the observed temperature-dependence of the line-width of both the modes. It also plays an important role in determining the temperature-dependence of the frequency of the Raman modes. The observed evolution of the line-width of the A$_{1g}$ mode suggests that electron-phonon processes are additionally involved. From the analysis of the temperature-dependent Raman spectra of MoS$_2$ on two different substrates -- SiO$_2$ and hexagonal boron nitride, we disentangle the contributions of external stress and internal impurities to these phonon-related processes. We find that the renormalization of the phonon mode frequencies on different substrates is governed by strain and intrinsic doping. Our work establishes the role of intrinsic phonon anharmonic effects in deciding the Raman shift in MoS$_2$ irrespective of substrate and layer number.
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Submitted 9 September, 2020;
originally announced September 2020.
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Population Analysis with Wannier Orbitals
Authors:
Sudipta Kundu,
Satadeep Bhattacharjee,
Seung-Cheol Lee,
Manish Jain
Abstract:
We formulate Wannier orbital overlap population and Wannier orbital Hamilton population to describe the contribution of different orbitals to electron distribution and their interactions. These methods, which are analogous to the well known crystal orbital overlap population and crystal orbital Hamilton population, provide insight into the distribution of electrons at various atom centres and thei…
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We formulate Wannier orbital overlap population and Wannier orbital Hamilton population to describe the contribution of different orbitals to electron distribution and their interactions. These methods, which are analogous to the well known crystal orbital overlap population and crystal orbital Hamilton population, provide insight into the distribution of electrons at various atom centres and their bonding nature. We apply this formalism in the context of a plane-wave density functional theory calculation. This method provides a means to connect the non-local plane-wave basis to a localised basis by projecting the wave functions from a plane-wave density functional theory calculation on to localized Wannier orbital basis. The main advantage of this formulation is that the spilling factor is strictly zero for insulators and can systematically be made small for metals. We use our proposed method to study and obtain bonding and electron localization insights in five different materials.
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Submitted 2 September, 2020;
originally announced September 2020.
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DNA versus RNA -- which shows higher electronic conduction?
Authors:
Abhishek Aggarwal,
Saientan Bag,
Ravindra Venkatramani,
Manish Jain,
Prabal K. Maiti
Abstract:
In this study, we compare the charge transport properties of multiple (double stranded) dsRNA sequences with corresponding dsDNA sequences. Recent studies have presented a contradictory picture of relative charge transport efficiencies in A-form DNA:RNA hybrids and dsDNA. Using a multiscale modelling framework, we compute conductance of dsDNA and dsRNA using Landauer formalism in coherent limit an…
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In this study, we compare the charge transport properties of multiple (double stranded) dsRNA sequences with corresponding dsDNA sequences. Recent studies have presented a contradictory picture of relative charge transport efficiencies in A-form DNA:RNA hybrids and dsDNA. Using a multiscale modelling framework, we compute conductance of dsDNA and dsRNA using Landauer formalism in coherent limit and Marcus-Hush theory in the incoherent limit. We find that dsDNA conducts better than dsRNA in both the charge transport regimes. Our analysis shows that the structural differences in the twist angle and slide of dsDNA and dsRNA are the main reasons behind the higher conductance of dsDNA in the incoherent hopping regime. In the coherent limit however, for the same base pair length, the conductance of dsRNA is higher than that of dsDNA for the morphologies where dsRNA has smaller end-to-end length relative to that of dsDNA.
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Submitted 22 July, 2020;
originally announced July 2020.
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Oxygen Vacancy-Induced Topological Hall effect in a Nonmagnetic Band Insulator
Authors:
Shashank Kumar Ojha,
Sanat Kumar Gogoi,
Manju Mishra Patidar,
Ranjan Kumar Patel,
Prithwijit Mandal,
Siddharth Kumar,
R. Venkatesh,
V. Ganesan,
Manish Jain,
Srimanta Middey
Abstract:
The discovery of skyrmions has sparked tremendous interests about topologically nontrivial spin textures in recent times. The signature of noncoplanar nature of magnetic moments can be observed as topological Hall effect (THE) in electrical measurement. Realization of such nontrivial spin textures in new materials and through new routes is an ongoing endeavour due to their huge potential for futur…
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The discovery of skyrmions has sparked tremendous interests about topologically nontrivial spin textures in recent times. The signature of noncoplanar nature of magnetic moments can be observed as topological Hall effect (THE) in electrical measurement. Realization of such nontrivial spin textures in new materials and through new routes is an ongoing endeavour due to their huge potential for future ultra-dense low-power memory applications. In this work, we report oxygen vacancy (OV) induced THE and anomalous Hall effect (AHE) in a 5$d^0$ system KTaO$_3$. The observation of weak antilocalization behavior and THE in the same temperature range strongly implies the crucial role of spin-orbit coupling (SOC) behind the origin of THE. Ab initio calculations reveal the formation of the magnetic moment on Ta atoms around the OV and Rashba-type spin texturing of conduction electrons. In the presence of Rashba SOC, the local moments around vacancy can form bound magnetic polarons (BMP) with noncollinear spin texture, resulting THE. Scaling analysis between transverse and longitudinal resistance establishes skew scattering driven AHE in present case. Our study opens a route to realize topological phenomena through defect engineering.
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Submitted 30 May, 2020;
originally announced June 2020.
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Oxygen vacancy induced electronic structure modification of KTaO$_3$
Authors:
Shashank Kumar Ojha,
Sanat Kumar Gogoi,
Prithwijit Mandal,
S. D. Kaushik,
J. W. Freeland,
M. Jain,
S. Middey
Abstract:
The observation of metallic interface between band insulators LaAlO$_3$ and SrTiO$_3$ has led to massive efforts to understand the origin of the phenomenon as well as to search for other systems hosting such two dimensional electron gases (2-DEG). However, the understanding of the origin of the 2-DEG is very often hindered as several possible mechanisms such as polar catastrophe, cationic intermix…
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The observation of metallic interface between band insulators LaAlO$_3$ and SrTiO$_3$ has led to massive efforts to understand the origin of the phenomenon as well as to search for other systems hosting such two dimensional electron gases (2-DEG). However, the understanding of the origin of the 2-DEG is very often hindered as several possible mechanisms such as polar catastrophe, cationic intermixing and oxygen vacancy (OV) etc. can be operative simultaneously. The presence of a heavy element makes KTaO$_3$ (KTO) based 2-DEG a potential platform to investigate spin orbit coupling driven novel electronic and magnetic phenomena. In this work, we investigate the sole effect of the OV, which makes KTO metallic. Our detailed \textit{ab initio} calculations not only find partially filled conduction bands in the presence of an OV but also predict a highly localized mid-gap state due to the linear clustering of OVs around Ta. Photoluminescence measurements indeed reveal the existence of such mid-gap state and O $K$-edge X-ray absorption spectroscopy finds electron doping in Ta $t_{2g}^*$ antibonding states. This present work suggests that one should be cautious about the possible presence of OVs within KTO substrate in interpreting metallic behavior of KTO based 2-DEG.
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Submitted 27 May, 2020;
originally announced May 2020.
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Excess entropy and breakdown of semiclassical description of thermoelectricity in twisted bilayer graphene close to half filling
Authors:
Bhaskar Ghawri,
Phanibhusan S. Mahapatra,
Shinjan Mandal,
Aditya Jayaraman,
Manjari Garg,
Kenji Watanabe,
Takashi Taniguchi,
H. R. Krishnamurthy,
Manish Jain,
Sumilan Banerjee,
U. Chandni,
Arindam Ghosh
Abstract:
In moiré systems with twisted bilayer graphene (tBLG), the amplification of Coulomb correlation effects at low twist angles ($θ$) is a result of nearly flat low-energy electronic bands and divergent density of states (DOS) at van Hove singularities (vHS). This not only causes superconductivity, Mott insulating states, and quantum anomalous Hall effect close to the critical (or magic) angle…
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In moiré systems with twisted bilayer graphene (tBLG), the amplification of Coulomb correlation effects at low twist angles ($θ$) is a result of nearly flat low-energy electronic bands and divergent density of states (DOS) at van Hove singularities (vHS). This not only causes superconductivity, Mott insulating states, and quantum anomalous Hall effect close to the critical (or magic) angle $θ= θ_{c} \approx 1.1^\circ$, but also unconventional metallic states that are claimed to exhibit non-Fermi liquid (NFL) excitations. However, unlike superconductivity and the correlation-induced gap in the DOS, unambiguous signatures of NFL effects in the metallic state remain experimentally elusive. Here we report simultaneous measurement of electrical resistivity ($ρ$) and thermoelectric power ($S$) in tBLG at $θ\approx 1.6^\circ$. We observe an emergent violation of the semiclassical Mott relation in the form of excess $S$ close to half-filling. The excess $S$ ($\approx 2$ $μ$V/K at low temperature $T \sim 10$ K) persists up to $\approx 40$ K, and is accompanied by metallic $T$-linear $ρ$ with transport scattering rate ($τ^{-1}$) of near-Planckian magnitude $τ^{-1} \sim k_{B}T/\hbar$. The combination of non-trivial electrical transport and violation of Mott relation provides compelling evidence of NFL physics intrinsic to tBLG, at small twist angle and half-filling.
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Submitted 26 April, 2020;
originally announced April 2020.
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Sublattice mixing in Cs$_2$AgInCl$_6$ for enhanced optical properties from first-principles
Authors:
Manish Kumar,
Manjari Jain,
Arunima Singh,
Saswata Bhattacharya
Abstract:
Lead-free double perovskite materials (viz. Cs$_2$AgInCl$_6$) are being explored as stable and non-toxic alternatives of lead halide perovskites. In order to expand the optical response of Cs$_2$AgInCl$_6$ in visible region, we report here the stability, electronic structure and optical properties of Cs$_2$AgInCl$_6$ by sublattice mixing of various elements. Here, we have employed %high-throughput…
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Lead-free double perovskite materials (viz. Cs$_2$AgInCl$_6$) are being explored as stable and non-toxic alternatives of lead halide perovskites. In order to expand the optical response of Cs$_2$AgInCl$_6$ in visible region, we report here the stability, electronic structure and optical properties of Cs$_2$AgInCl$_6$ by sublattice mixing of various elements. Here, we have employed %high-throughput screening using a hierarchical first-principles based approach starting from density functional theory (DFT) with appropriate exchange-correlation functionals to beyond DFT methods under the framework of many body perturbation theory (viz. G$_0$W$_0$@HSE06). We have started with 32 primary set of combinations of metals M(I), M(II), M(III) and halogen X at Ag/In and Cl site, respectively, where concentration of each set is varied to build a database of nearly 140 combinations. The most suitable mixed sublattices are identified to engineer the band gap of Cs$_2$AgInCl$_6$ to have its application in optoelectronic devices under visible light.
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Submitted 2 January, 2021; v1 submitted 16 April, 2020;
originally announced April 2020.
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A novel coupled RPL/OSL system to understand the dynamics of the metastable states
Authors:
Mayank Jain,
Raju Kumar,
Myungho Kook
Abstract:
Metastable states form by charge (electron and hole) capture in defects in a solid. They play an important role in dosimetry, information storage, and many medical and industrial applications of photonics. Despite many decades of research, the exact mechanisms resulting in luminescence signals such as optically/thermally stimulated luminescence (OSL or TL) or long persistent luminescence through c…
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Metastable states form by charge (electron and hole) capture in defects in a solid. They play an important role in dosimetry, information storage, and many medical and industrial applications of photonics. Despite many decades of research, the exact mechanisms resulting in luminescence signals such as optically/thermally stimulated luminescence (OSL or TL) or long persistent luminescence through charge transfer across the metastable states remain poorly understood. Our lack of understanding owes to the fact that such luminescence signals arise from a convolution of several steps such as charge (de)trapping, transport and recombination, which are not possible to track individually. Here we present a novel coupled RPL(radio-photoluminescence)/OSL system based on an electron trap in a ubiquitous, natural, geophotonic mineral called feldspar (aluminosilicate). RPL/OSL allows understanding the dynamics of the trapped electrons and trapped holes individually. We elucidate for the first time trap distribution, thermal eviction, and radiation-induced growth of trapped electron and holes. The new methods and insights provided here are crucial for next generation model-based applications of luminescence dating in Earth and environmental sciences, e.g. thermochronometry and photochronometry.
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Submitted 31 August, 2020; v1 submitted 4 February, 2020;
originally announced February 2020.
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Native Point Defects in Mono-- and Bi--layer Phosphorene
Authors:
Sudipta Kundu,
Mit H. Naik,
Manish Jain
Abstract:
We study the stability and electronic properties of intrinsic point defects, vacancy and self-interstitial, in mono- and bi-layer phosphorene. We calculate the formation energies, quasiparticle defect states and charge transition levels (CTLs) of these defects using \textit{ab initio} density functional theory (DFT) and GW approximation to the electron self-energy. Using the DFT + GW two paths for…
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We study the stability and electronic properties of intrinsic point defects, vacancy and self-interstitial, in mono- and bi-layer phosphorene. We calculate the formation energies, quasiparticle defect states and charge transition levels (CTLs) of these defects using \textit{ab initio} density functional theory (DFT) and GW approximation to the electron self-energy. Using the DFT + GW two paths formalism for studying interstitial in monolayer phosphorene, we show that with the inclusion of electrostatic corrections CTLs can be calculated reliably. Our calculations show that all the native point defects have low formation energies 0.9-1.6 eV in neutral state. Furthermore, we find that vacancy in phosphorene behaves as an acceptor-like defect which can explain the p-type conductivity in phosphorene. On the other hand, interstitial can show both acceptor- and donor-like behaviour.
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Submitted 13 January, 2020;
originally announced January 2020.
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Reconstruction of moiré lattices in twisted transition metal dichalcogenide bilayers
Authors:
Indrajit Maity,
Prabal K. Maiti,
H. R. Krishnamurthy,
Manish Jain
Abstract:
An important step in understanding the exotic electronic, vibrational, and optical properties of the moiré lattices is the inclusion of the effects of structural relaxation of the un-relaxed moiré lattices. Here, we propose novel structures for twisted bilayer of transition metal dichalcogenides (TMDs). For $θ\gtrsim 58.4^{\circ}$, we show a dramatic reconstruction of the moiré lattices, leading t…
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An important step in understanding the exotic electronic, vibrational, and optical properties of the moiré lattices is the inclusion of the effects of structural relaxation of the un-relaxed moiré lattices. Here, we propose novel structures for twisted bilayer of transition metal dichalcogenides (TMDs). For $θ\gtrsim 58.4^{\circ}$, we show a dramatic reconstruction of the moiré lattices, leading to a trimerization of the unfavorable stackings. We show that the development of curved domain walls due to the three-fold symmetry of the stacking energy landscape is responsible for such lattice reconstruction. Furthermore, we show that the lattice reconstruction notably changes the electronic band-structure. This includes the occurrence of flat bands near the edges of the conduction as well as valence bands, with the valence band maximum, in particular, corresponding to localized states enclosed by the trimer. We also find possibilities for other complicated, entropy stabilized, lattice reconstructed structures.
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Submitted 18 February, 2021; v1 submitted 18 December, 2019;
originally announced December 2019.