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Mid-infrared emission and absorption in strained and relaxed direct bandgap GeSn semiconductors
Authors:
Simone Assali,
Alain Dijkstra,
Anis Attiaoui,
Étienne Bouthillier,
Jos E. M. Haverkort,
Oussama Moutanabbir
Abstract:
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0 μm upon post-growth strain relaxation in layers with uniform Sn content of 17 at.%. The fundamental mechanisms governing the optical emission are discussed bas…
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By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. We extend the room-temperature emission wavelength above ~4.0 μm upon post-growth strain relaxation in layers with uniform Sn content of 17 at.%. The fundamental mechanisms governing the optical emission are discussed based on temperature-dependent photoluminescence, absorption measurements, and theoretical simulations. Regardless of strain and composition, these analyses confirm that single-peak emission is always observed in the probed temperature range of 4-300 K, ruling out defect- and impurity-related emission. Moreover, carrier losses into thermally-activated non-radiative recombination channels are found to be greatly minimized as a result of strain relaxation. Absorption measurements validate the direct band gap absorption in strained and relaxed samples at energies closely matching photoluminescence data. These results highlight the strong potential of GeSn semiconductors as versatile building blocks for scalable, compact, and silicon-compatible mid-infrared photonics and quantum opto-electronics.
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Submitted 22 December, 2020; v1 submitted 28 April, 2020;
originally announced April 2020.
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Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys
Authors:
E. M. T. Fadaly,
A. Dijkstra,
J. R. Suckert,
D. Ziss,
M. A. J. v. Tilburg,
C. Mao,
Y. Ren,
V. T. v. Lange,
S. Kölling,
M. A. Verheijen,
D. Busse,
C. Rödl,
J. Furthmüller,
F. Bechstedt,
J. Stangl,
J. J. Finley,
S. Botti,
J. E. M. Haverkort,
E. P. A. M. Bakkers
Abstract:
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades…
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Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies.
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Submitted 2 November, 2019;
originally announced November 2019.
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Anomalous exciton lifetime by an electromagnetic coupling of self-assembled quantum dots
Authors:
E. W. Bogaart,
J. E. M. Haverkort
Abstract:
We report on the experimental observation of a hitherto ignored long-range electromagnetic coupling between self-assembled quantum dots. A 12 times enhancement of the quantum dot exciton lifetime is observed by means of time-resolved differential reflection spectroscopy. The enhancement is explained by utilizing and extending the local field effects as developed in \emph{Phys. Rev. B \textbf{64}…
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We report on the experimental observation of a hitherto ignored long-range electromagnetic coupling between self-assembled quantum dots. A 12 times enhancement of the quantum dot exciton lifetime is observed by means of time-resolved differential reflection spectroscopy. The enhancement is explained by utilizing and extending the local field effects as developed in \emph{Phys. Rev. B \textbf{64},125326 (2001)}. The electromagnetic coupling of the quantum dots results in a collective polarizability, and is observed as a suppression of the emission rate. Our results reveal that the coupling is established over a distance exceeding 490 nm. Moreover, the mutual coupling strength is optically tuned by varying the pump excitation density and enables us to optically tune the exciton lifetime.
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Submitted 2 August, 2007;
originally announced August 2007.
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Observation of a Long-Range Interaction between Semiconductor Quantum Dots
Authors:
E. W. Bogaart,
J. E. M. Haverkort,
R. Noetzel
Abstract:
We demonstrate electromagnetic interaction between distant quantum dots (QDs), as is observed from transient pump-probe differential reflectivity measurements. The QD-exciton lifetime is measured as a function of the probe photon energy and shows a strong resonant behavior with respect to the QD density of states. The observed exciton lifetime spectrum reveals a subradiance-like coupling between…
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We demonstrate electromagnetic interaction between distant quantum dots (QDs), as is observed from transient pump-probe differential reflectivity measurements. The QD-exciton lifetime is measured as a function of the probe photon energy and shows a strong resonant behavior with respect to the QD density of states. The observed exciton lifetime spectrum reveals a subradiance-like coupling between the QD, with a 12 times enhancement of the lifetime at the center of the ground state transition. This effect is due to a mutual electromagnetic coupling between resonant QDs, which extends over distances considerably beyond the nearest neighbor QD-QD separation.
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Submitted 7 October, 2006;
originally announced October 2006.
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Differential reflection spectroscopy on InAs/GaAs quantum dots
Authors:
E. W. Bogaart,
J. E. M. Haverkort
Abstract:
In this report, we present the derivation of the differential reflection spectrum as has been reported in \emph{Phys. Rev. B} \textbf{72}, 195301 (2005).
In this report, we present the derivation of the differential reflection spectrum as has been reported in \emph{Phys. Rev. B} \textbf{72}, 195301 (2005).
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Submitted 17 February, 2006;
originally announced February 2006.
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All-optical switching due to state-filling in quantum dots
Authors:
R. Prasanth,
J. E. M. Haverkort,
A. Deepthy,
E. W. Bogaart,
J. J. G. M. van der Tol,
E. A. Patent,
G. Zhao,
Q. Gong,
P. J. van Veldhoven,
R. Noetzel,
J. H. Wolter
Abstract:
We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach-Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530-1570 nm probe beam is switched by optical excitation of one MZI-arm from the top. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity…
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We report all-optical switching due to state-filling in quantum dots (QDs) within a Mach-Zehnder Interferometric (MZI) switch. The MZI was fabricated using InGaAsP/InP waveguides containing a single layer of InAs/InP QDs. A 1530-1570 nm probe beam is switched by optical excitation of one MZI-arm from the top. By exciting below the InGaAsP bandgap, we prove that the refractive index nonlinearity is only due to the QDs. The switching efficiency is 2 rad/(microW absorbed power). Probe wavelength insensitivity was obtained using a broad distribution of QDs.
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Submitted 18 October, 2004;
originally announced October 2004.
