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Improving the Electro-Optical Properties of MoS$_2$/rGO Hybrid Nanocomposites Using Liquid Crystals
Authors:
A. Vasilev,
Y. Melikyan,
M. Zhezhu,
V. Hayrapetyan,
M. S. Torosyan,
D. A. Ghazaryan,
M. Yeranosyan,
H. Gharagulyan
Abstract:
Hybrid systems of two-dimensional (2D) materials (such as graphene-family materials and 2D transition metal dichalcogenides) are attracting much attention due to their distinctive optoelectronic, thermal, mechanical, and chemical properties. The application perspectives of these materials in various fields further expand when enriching those with liquid crystals (LCs) primarily due to their enhanc…
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Hybrid systems of two-dimensional (2D) materials (such as graphene-family materials and 2D transition metal dichalcogenides) are attracting much attention due to their distinctive optoelectronic, thermal, mechanical, and chemical properties. The application perspectives of these materials in various fields further expand when enriching those with liquid crystals (LCs) primarily due to their enhanced tunability and functionality. In this study, we report on the hydrothermal synthesis of hybrid nanocomposites composed of MoS$_2$ and rGO and discuss tuning possibilities of their electro-optical properties by incorporating thermotropic LCs. In particular, we demonstrate that the incorporation of 5CB LC increases the sensitivity and charge storage efficiency of the hybrid nanocomposites. In addition, we also present the responsivity, detectivity, and response time properties of the hybrid nanocomposites of MoS$_2$/rGO, both with and without the inclusion of nematic LCs. Furthermore, we demonstrate that the system exhibits a 5CB-induced photocurrent switching effect. We believe the findings will open new doors for applications of these materials in optoelectronics and photonics.
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Submitted 14 August, 2024;
originally announced August 2024.
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Nanopatterning of multicomponent van der Waals heterostructures using atomic force microscopy
Authors:
A. L. Shilov,
L. Elesin,
A. Grebenko,
V. I. Kleshch,
M. A. Kashchenko,
I. Mazurenko,
E. Titova,
E. Zharkova,
D. S. Yakovlev,
K. S. Novoselov,
D. A. Ghazaryan,
V. Dremov,
D. A. Bandurin
Abstract:
Multilayer van der Waals (vdW) heterostructures have become an important platform in which to study novel fundamental effects emerging at the nanoscale. Standard nanopatterning techniques relying on electron-beam lithography and reactive ion etching, widely applied to pattern such heterostructures, however, impose some limitations on the edge accuracy and resolution, as revealed through numerous e…
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Multilayer van der Waals (vdW) heterostructures have become an important platform in which to study novel fundamental effects emerging at the nanoscale. Standard nanopatterning techniques relying on electron-beam lithography and reactive ion etching, widely applied to pattern such heterostructures, however, impose some limitations on the edge accuracy and resolution, as revealed through numerous experiments with vdW quantum dots and point contacts. Here we present an alternative approach for electrode-free nanopatterning of thick multilayer vdW heterostructures based on atomic force microscopy (AFM). By applying an AC voltage of a relatively small frequency (1-10 kHz) between the sharp platinum tip and the substrate, we realize high-resolution ($\lesssim 100$ nm) etching of thick multicomponent heterostructures if the latter are deposited onto graphite slabs. Importantly, unlike more conventional electrode-free local anodic oxidation, our method does not require a special environment with excess humidity, can be applied at ambient conditions, and enables the patterning of multilayer heterostructures composed of graphene, graphite, hexagonal boron nitride (hBN), NbSe$_{2}$, WSe$_{2}$, and more.
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Submitted 24 June, 2024;
originally announced June 2024.
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E-Beam Induced Micropattern Generation and Amorphization of L-Cysteine-Functionalized Graphene Oxide Nano-composites
Authors:
Y. Melikyan,
H. Gharagulyan,
A. Vasilev,
V. Hayrapetyan,
M. Zhezhu,
A. Simonyan,
D. A. Ghazaryan,
M. S. Torosyan,
A. Kharatyan,
J. Michalicka,
M. Yeranosyan
Abstract:
The evolution of dynamic processes in graphene-family materials are of great interest for both scientific purposes and technical applications. Scanning electron microscopy and transmission electron microscopy outstand among the techniques that allow both observing and controlling such dynamic processes in real time. On the other hand, functionalized graphene oxide emerges as a favorable candidate…
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The evolution of dynamic processes in graphene-family materials are of great interest for both scientific purposes and technical applications. Scanning electron microscopy and transmission electron microscopy outstand among the techniques that allow both observing and controlling such dynamic processes in real time. On the other hand, functionalized graphene oxide emerges as a favorable candidate from graphene-family materials for such an investigation due to its distinctive properties, that encompass a large surface area, robust thermal stability, and noteworthy electrical and mechanical properties after its reduction. Here, we report on studies of surface structure and adsorption dynamics of L-Cysteine on electrochemically exfoliated graphene oxides basal plane. We show that electron beam irradiation prompts an amorphization of functionalized graphene oxide along with the formation of micropatterns of controlled geometry composed of L-Cysteine-Graphene oxide nanostructures. The controlled growth and predetermined arrangement of micropatterns as well as controlled structure disorder induced by e beam amorphization, in its turn potentially offering tailored properties and functionalities paving the way for potential applications in nanotechnology, sensor development, and surface engineering. Our findings demonstrate that graphene oxide can cover L-Cysteine in such a way to provide a control on the positioning of emerging microstructures about 10-20 um in diameter. Besides, Raman and SAED measurement analyses yield above 50% amorphization in a material. The results of our studies demonstrate that such a technique enables the direct creation of micropatterns of L-Cysteine-Graphene oxide eliminating the need for complicated mask patterning procedures.
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Submitted 26 January, 2024;
originally announced January 2024.
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Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier
Authors:
Dmitry A. Mylnikov,
Mikhail A. Kashchenko,
Kirill N. Kapralov,
Davit A. Ghazaryan,
Evgenii E. Vdovin,
Sergey V. Morozov,
Kostya S. Novoselov,
Denis A. Bandurin,
Alexander I. Chernov,
Dmitry A. Svintsov
Abstract:
Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional…
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Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional to the second derivative of the tunnel current with respect to the bias voltage, peaking during tunneling through the hBN impurity level. We revealed that the origin of the photocurrent generation lies in the change of the tunneling probability upon radiation-induced electron heating in graphene layers, in agreement with the theoretical model that we developed. Finally, we show that at a finite bias voltage, the photocurrent is proportional to the either of the graphene layers heating under the illumination, while at zero bias, it is proportional to the heating difference. Thus, the photocurrent in such devices can be used for accurate measurements of the electronic temperature providing a convenient alternative to Johnson noise thermometry.
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Submitted 9 December, 2023;
originally announced December 2023.
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Exploring van der Waals materials with high anisotropy: geometrical and optical approaches
Authors:
Aleksandr S. Slavich,
Georgy A. Ermolaev,
Mikhail K. Tatmyshevskiy,
Adilet N. Toksumakov,
Olga G. Matveeva,
Dmitriy V. Grudinin,
Arslan Mazitov,
Konstantin V. Kravtsov,
Alexander V. Syuy,
Dmitry M. Tsymbarenko,
Mikhail S. Mironov,
Sergey M. Novikov,
Ivan Kruglov,
Davit A. Ghazaryan,
Andrey A. Vyshnevyy,
Aleksey V. Arsenin,
Valentyn S. Volkov,
Kostya S. Novoselov
Abstract:
The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family…
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The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family of vdW materials is a challenging quest requiring innovative approaches. Here, we suggest an easy-to-use method for such a survey based on the crystallographic geometrical perspective of vdW materials followed by their optical characterization. Using our approach, we found As2S3 as a highly anisotropic vdW material. It demonstrates rare giant in-plane optical anisotropy, high refractive index and transparency in the visible range, overcoming the century-long record set by rutile. Given these benefits, As2S3 opens a pathway towards next-generation nanophotonics as demonstrated by an ultrathin true zero-order quarter-waveplate that combines classical and the Fabry-Perot optical phase accumulations. Hence, our approach provides an effective and easy-to-use method to find vdW materials with the utmost anisotropic properties.
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Submitted 5 September, 2023;
originally announced September 2023.
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Essential L-Amino Acid-Functionalized Graphene Oxide for Liquid Crystalline Phase Formation
Authors:
H. Gharagulyan,
Y. Melikyan,
V. Hayrapetyan,
Kh. Kirakosyan,
D. A. Ghazaryan,
M. Yeranosyan
Abstract:
The colloidal 2D materials based on graphene and its modifications are of great interest when it comes to forming LC phases. These LC phases allow controlling the orientational order of colloidal particles, paving the way for the efficient processing of modified graphene with anisotropic properties. Here, we present the peculiarities of AA functionalization of GO, along with the formation of its L…
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The colloidal 2D materials based on graphene and its modifications are of great interest when it comes to forming LC phases. These LC phases allow controlling the orientational order of colloidal particles, paving the way for the efficient processing of modified graphene with anisotropic properties. Here, we present the peculiarities of AA functionalization of GO, along with the formation of its LC phase and orientational behavior in an external magnetic field. We discuss the influence of pH on the GOLC, ultimately showing its pH-dependent behavior for GO-AA complexes. In addition, we observe different GO morphology changes due to the presence of AA functional groups, namely L-cysteine dimerization on the GO platform. The pH dependency of AA-functionalized LC phase of GO is examined for the first time. We believe that our studies will open new possibilities for applications in bionanotechnologies due to self-assembling properties of LCs and magnificent properties of GO.
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Submitted 29 May, 2023;
originally announced May 2023.
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Hexagonal boron nitride nanophotonics
Authors:
D. V. Grudinin,
G. A. Ermolaev,
D. G. Baranov,
A. N. Toksumakov,
K. V. Voronin,
A. S. Slavich,
A. A. Vyshnevyy,
A. B. Mazitov,
I. A. Kruglov,
D. Ghazaryan,
A. V. Arsenin,
K. S. Novoselov,
V. S. Volkov
Abstract:
A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly anisotropic materials and metasurfaces. Hexagonal boron nitride (hBN) is one of promising materials for the future nanophotonics owing to its inherent anisotro…
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A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly anisotropic materials and metasurfaces. Hexagonal boron nitride (hBN) is one of promising materials for the future nanophotonics owing to its inherent anisotropy and prospects of high-quality monocrystals growth with atomically flat surface. Here, we present highly accurate optical constants of hBN in the broad wavelength range of 250-1700 nm combining the imaging ellipsometry measurements scanning near-field optical microscopy and first-principle quantum mechanical computations. hBN's high refractive index, up to 2.75 in ultraviolet (UV) and visible range, broadband birefringence of 0.7, and negligible optical losses make it an outstanding material for UV and visible range photonics. Based on our measurement results, we propose and design novel optical elements: handedness-preserving mirrors and subwavelength waveguides with dimensions of 40 nm operating in the visible and UV range, respectively. Remarkably, our results offer unique opportunity to bridge the size-gap between photonics and electronics.
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Submitted 5 March, 2023;
originally announced March 2023.
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Anomalous optical response of graphene on hexagonal boron nitride substrates
Authors:
Adilet Toksumakov,
Georgy Ermolaev,
Mikhail Tatmyshevskiy,
Yuri Klishin,
Aleksandr Slavich,
Ilya Begichev,
Dusan Stosic,
Dmitry Yakubovsky,
Dmitry Kvashnin,
Andrey Vyshnevyy,
Aleksey Arsenin,
Valentyn Volkov,
Davit Ghazaryan
Abstract:
Graphene/hBN heterostructures can be considered as one of the basic building blocks for the next-generation optoelectronics mostly owing to the record-high electron mobilities. However, currently, the studies of the intrinsic optical properties of graphene are limited to the standard substrates (SiO2/Si, glass, quartz) despite the growing interest in graphene/hBN heterostructures. This can be attr…
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Graphene/hBN heterostructures can be considered as one of the basic building blocks for the next-generation optoelectronics mostly owing to the record-high electron mobilities. However, currently, the studies of the intrinsic optical properties of graphene are limited to the standard substrates (SiO2/Si, glass, quartz) despite the growing interest in graphene/hBN heterostructures. This can be attributed to a challenging task of the determination of hBN's strongly anisotropic dielectric tensor in the total optical response. In this study, we overcome this issue through imaging spectroscopic ellipsometry utilizing simultaneous analysis of hBN's optical response with and without graphene monolayers. Our technique allowed us to retrieve the optical constants of graphene from graphene/hBN heterostructures in a broad spectral range of 250-950 nm. Our results suggest that graphene's absorption on hBN may exceed the one of graphene on SiO2/Si by about 60 %.
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Submitted 2 December, 2022;
originally announced December 2022.
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High-refractive index and mechanically cleavable non-van der Waals InGaS3
Authors:
Adilet N. Toksumakov,
Georgy A. Ermolaev,
Alexander S. Slavich,
Natalia V. Doroshina,
Ekaterina V. Sukhanova,
Dmitry I. Yakubovsky,
Sergey M. Novikov,
Alexander S. Oreshonkov,
Dmitry M. Tsymbarenko,
Zakhar I. Popov,
Dmitry G. Kvashnin,
Andrey A. Vyshnevyy,
Aleksey V. Arsenin,
Davit A. Ghazaryan,
Valentyn S. Volkov
Abstract:
The growing families of two-dimensional crystals derived from naturally occurring van der Waals materials offer an unprecedented platform to investigate elusive physical phenomena and could be of use in a diverse range of devices. Of particular interest are recently reported atomic sheets of non-van der Waals materials, which could allow a better comprehension of the nature of structural bonds and…
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The growing families of two-dimensional crystals derived from naturally occurring van der Waals materials offer an unprecedented platform to investigate elusive physical phenomena and could be of use in a diverse range of devices. Of particular interest are recently reported atomic sheets of non-van der Waals materials, which could allow a better comprehension of the nature of structural bonds and increase the functionality of prospective heterostructures. Here, we study the optostructural properties of ultrathin non-van der Waals InGaS3 sheets produced by standard mechanical cleavage. Our ab initio calculation results suggest an emergence of authentically delicate out-of-plane covalent bonds within its unit cell, and, as a consequence, an artificial generation of layered structure within the material. Those yield to singular layer isolation energies of around 50 meVA-2, which is comparable with the conventional van der Waals material's monolayer isolation energies of 20 - 60 meVA-2. In addition, we provide a comprehensive analysis of the structural, vibrational, and optical properties of the materials presenting that it is a wide bandgap (2.73 eV) semiconductor with a high-refractive index (higher than 2.5) and negligible losses in the visible and infrared spectral ranges. It makes it a perfect candidate for further establishment of visible-range all-dielectric nanophotonics.
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Submitted 5 May, 2022;
originally announced May 2022.
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Twisted monolayer and bilayer graphene for vertical tunneling transistors
Authors:
Davit A. Ghazaryan,
Abhishek Misra,
Evgenii E. Vdovin,
Kenji Watanabe,
Takashi Taniguchi,
Sergei V. Morozov,
Artem Mishchenko,
Kostya S. Novoselov
Abstract:
We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Un…
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We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance (NDC) can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, which allows control over the resonant conditions.
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Submitted 25 March, 2021;
originally announced March 2021.
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Field-induced insulating states in a graphene superlattice
Authors:
S. Pezzini,
S. Wiedmann,
A. Mishchenko,
M. Holwill,
R. Gorbachev,
D. Ghazaryan,
K. S. Novoselov,
U. Zeitler
Abstract:
We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moiré modulation (15 nm) enables us to access the Hofstadter spectrum in the vicinity of and above one flux quantum per superlattice unit cell (Phi/Phi_0 = 1 at B = 22 T). We thereby reveal, in addition to the spin-valley antifer…
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We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moiré modulation (15 nm) enables us to access the Hofstadter spectrum in the vicinity of and above one flux quantum per superlattice unit cell (Phi/Phi_0 = 1 at B = 22 T). We thereby reveal, in addition to the spin-valley antiferromagnet at nu = 0, two insulating states developing in positive and negative effective magnetic fields from the main nu = 1 and nu = -2 quantum Hall states respectively. We investigate the field dependence of the energy gaps associated with these insulating states, which we quantify from the temperature-activated peak resistance. Referring to a simple model of local Landau quantization of third generation Dirac fermions arising at Phi/Phi_0 = 1, we describe the different microscopic origins of the insulating states and experimentally determine the energy-momentum dispersion of the emergent gapped Dirac quasi-particles.
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Submitted 4 February, 2019;
originally announced February 2019.
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Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
Authors:
Gwangwoo Kim,
Sung-Soo Kim,
Jonghyuk Jeon,
Seong In Yoon,
Seokmo Hong,
Young Jin Cho,
Abhishek Misra,
Servet Ozdemir,
Jun Yin,
Davit Ghazaryan,
Mathew Holwill,
Artem Mishchenko,
Daria V. Andreeva,
Yong-Jin Kim,
Hu Young Jeong,
A-Rang Jang,
Hyun-Jong Chung,
Andre K. Geim,
Kostya S. Novoselov,
Byeong-Hyeok Sohn,
Hyeon Suk Shin
Abstract:
Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical…
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Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.
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Submitted 16 January, 2019;
originally announced January 2019.
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Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
Authors:
M. T. Greenaway,
E. E. Vdovin,
D. Ghazaryan,
A. Misra,
A. Mishchenko,
Y. Cao,
Z. Wang,
J. R. Wallbank,
M. Holwill,
Yu. N. Khanin,
S. V. Morozov,
K. Watanabe,
T. Taniguchi,
O. Makarovsky,
T. M. Fromhold,
A. Patanè,
A. K. Geim,
V. I. Fal'ko,
K. S. Novoselov,
L. Eaves
Abstract:
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical…
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Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer hBN barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.
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Submitted 14 December, 2018; v1 submitted 2 October, 2018;
originally announced October 2018.
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Unusual suppression of the superconducting energy gap and critical temperature in atomically thin NbSe2
Authors:
Ekaterina Khestanova,
John Birkbeck,
Mengjian Zhu,
Yang Cao,
Geliang Yu,
Davit Ghazaryan,
Jun Yin,
Helmuth Berger,
Laszlo Forro,
Takashi Taniguchi,
Kenji Watanabe,
Roman V. Gorbachev,
Artem Mishchenko,
Andre K. Geim,
Irina V. Grigorieva
Abstract:
It is well known that superconductivity in thin films is generally suppressed with decreasing thickness. This suppression is normally governed by either disorder-induced localization of Cooper pairs, weakening of Coulomb screening, or generation and unbinding of vortex-antivortex pairs as described by the Berezinskii-Kosterlitz-Thouless (BKT) theory. Defying general expectations, few-layer NbSe2 -…
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It is well known that superconductivity in thin films is generally suppressed with decreasing thickness. This suppression is normally governed by either disorder-induced localization of Cooper pairs, weakening of Coulomb screening, or generation and unbinding of vortex-antivortex pairs as described by the Berezinskii-Kosterlitz-Thouless (BKT) theory. Defying general expectations, few-layer NbSe2 - an archetypal example of ultrathin superconductors - has been found to remain superconducting down to monolayer thickness. Here we report measurements of both the superconducting energy gap and critical temperature in high-quality monocrystals of few-layer NbSe2, using planar-junction tunneling spectroscopy and lateral transport. We observe a fully developed gap that rapidly reduces for devices with the number of layers N < 5, as does their ctitical temperature. We show that the observed reduction cannot be explained by disorder, and the BKT mechanism is also excluded by measuring its transition temperature that for all N remains very close to Tc. We attribute the observed behavior to changes in the electronic band structure predicted for mono- and bi- layer NbSe2 combined with inevitable suppression of the Cooper pair density at the superconductor-vacuum interface. Our experimental results for N > 2 are in good agreement with the dependences of the gap and Tc expected in the latter case while the effect of band-structure reconstruction is evidenced by a stronger suppression of the gap and the disappearance of its anisotropy for N = 2. The spatial scale involved in the surface suppression of the density of states is only a few angstroms but cannot be ignored for atomically thin superconductors.
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Submitted 13 March, 2018;
originally announced March 2018.
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Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3
Authors:
Davit Ghazaryan,
Mark T. Greenaway,
Zihao Wang,
Victor H. Guarochico-Moreira,
Ivan J. Vera-Marun,
Jun Yin,
Yuanxun Liao,
Serge V. Morozov,
Oleg Kristanovski,
Alexander I. Lichtenstein,
Mikhail I. Katsnelson,
Fred Withers,
Artem Mishchenko,
Laurence Eaves,
Andre K. Geim,
Kostya S. Novoselov,
Abhishek Misra
Abstract:
The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretica…
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The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretically and experimentally. Here we investigate electron tunnelling through a thin (2-6 layers) ferromagnetic CrBr3 barrier. For devices with non-magnetic barriers, conservation of momentum can be relaxed by phonon-assisted tunnelling or by tunnelling through localised states. In the case of our ferromagnetic barrier the dominant tunnelling mechanisms are the emission of magnons at low temperatures or scattering of electrons on localised magnetic excitations above the Curie temperature. Tunnelling with magnon emission offers the possibility of injecting spin into the collector electrode.
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Submitted 12 May, 2018; v1 submitted 6 March, 2018;
originally announced March 2018.
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Graphene hot-electron light bulb: incandescence from hBN-encapsulated graphene in air
Authors:
Seok-Kyun Son,
Makars Šiškins,
Ciaran Mullan,
Jun Yin,
Vasyl G. Kravets,
Aleksey Kozikov,
Servet Ozdemir,
Manal Alhazmi,
Matthew Holwill,
Kenji Watanabe,
Takashi Taniguchi,
Davit Ghazaryan,
Kostya S. Novoselov,
Vladimir I. Fal'ko,
Artem Mishchenko
Abstract:
The excellent electronic and mechanical properties of graphene allow it to sustain very large currents, enabling its incandescence through Joule heating in suspended devices. Although interesting scientifically and promising technologically, this process is unattainable in ambient environment, because graphene quickly oxidises at high temperatures. Here, we take the performance of graphene-based i…
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The excellent electronic and mechanical properties of graphene allow it to sustain very large currents, enabling its incandescence through Joule heating in suspended devices. Although interesting scientifically and promising technologically, this process is unattainable in ambient environment, because graphene quickly oxidises at high temperatures. Here, we take the performance of graphene-based incandescent devices to the next level by encapsulating graphene with hexagonal boron nitride (hBN). Remarkably, we found that the hBN encapsulation provides an excellent protection for hot graphene filaments even at temperatures well above 2000 K. Unrivalled oxidation resistance of hBN combined with atomically clean graphene/hBN interface allows for a stable light emission from our devices in atmosphere for many hours of continuous operation. Furthermore, when confined in a simple photonic cavity, the thermal emission spectrum is modified by a cavity mode, shifting the emission to the visible range spectrum. We believe our results demonstrate that hBN/graphene heterostructures can be used to conveniently explore the technologically important high-temperature regime and to pave the way for future optoelectronic applications of graphene-based systems.
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Submitted 26 October, 2017;
originally announced October 2017.
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Stacking transition in bilayer graphene caused by thermally activated rotation
Authors:
Mengjian Zhu,
Davit Ghazaryan,
Seok-Kyun Son,
Colin R. Woods,
Abhishek Misra,
Lin He,
Takashi Taniguchi,
Kenji Watanabe,
Kostya S. Novoselov,
Yang Cao,
Artem Mishchenko
Abstract:
Crystallographic alignment between two-dimensional crystals in van der Waals heterostructures brought a number of profound physical phenomena, including observation of Hofstadter butterfly and topological currents, and promising novel applications, such as resonant tunnelling transistors. Here, by probing the electronic density of states in graphene using graphene-hexagonal boron nitride tunnellin…
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Crystallographic alignment between two-dimensional crystals in van der Waals heterostructures brought a number of profound physical phenomena, including observation of Hofstadter butterfly and topological currents, and promising novel applications, such as resonant tunnelling transistors. Here, by probing the electronic density of states in graphene using graphene-hexagonal boron nitride tunnelling transistors, we demonstrate a structural transition of bilayer graphene from incommensurate twisted stacking state into a commensurate AB stacking due to a macroscopic graphene self-rotation. This structural transition is accompanied by a topological transition in the reciprocal space and by pseudospin texturing. The stacking transition is driven by van der Waals interaction energy of the two graphene layers and is thermally activated by unpinning the microscopic chemical adsorbents which are then removed by the self-cleaning of graphene.
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Submitted 7 December, 2016;
originally announced December 2016.
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Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
Authors:
J. R. Wallbank,
D. Ghazaryan,
A. Misra,
Y. Cao,
J. S. Tu,
B. A. Piot,
M. Potemski,
S. Pezzini,
S. Wiedmann,
U. Zeitler,
T. L. M. Lane,
S. V. Morozov,
M. T. Greenaway,
L. Eaves,
A. K. Geim,
V. I. Fal'ko,
K. S. Novoselov,
A. Mishchenko
Abstract:
Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly…
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Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley.
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Submitted 8 August, 2016;
originally announced August 2016.
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Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
Authors:
E. E. Vdovin,
A. Mishchenko,
M. T. Greenaway,
M. J. Zhu,
D. Ghazaryan,
A. Misra,
Y. Cao,
S. V. Morozov,
O. Makarovsky,
A. Patanè,
G. J. Slotman,
M. I. Katsnelson,
A. K. Geim,
K. S. Novoselov,
L. Eaves
Abstract:
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence i…
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We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.
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Submitted 8 December, 2015; v1 submitted 7 December, 2015;
originally announced December 2015.
