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Single-shot fabrication of semiconducting-superconducting nanowire devices
Authors:
Francesco Borsoi,
Grzegorz P. Mazur,
Nick van Loo,
Michał P. Nowak,
Léo Bourdet,
Kongyi Li,
Svetlana Korneychuk,
Alexandra Fursina,
Elvedin Memisevic,
Ghada Badawy,
Sasa Gazibegovic,
Kevin van Hoogdalem,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Sebastian Heedt,
Marina Quintero-Pérez
Abstract:
Semiconducting-superconducting nanowires attract widespread interest owing to the possible presence of non-abelian Majorana zero modes, which hold promise for topological quantum computation. However, the search for Majorana signatures is challenging because reproducible hybrid devices with desired nanowire lengths and material parameters need to be reliably fabricated to perform systematic explor…
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Semiconducting-superconducting nanowires attract widespread interest owing to the possible presence of non-abelian Majorana zero modes, which hold promise for topological quantum computation. However, the search for Majorana signatures is challenging because reproducible hybrid devices with desired nanowire lengths and material parameters need to be reliably fabricated to perform systematic explorations in gate voltages and magnetic fields. Here, we exploit a fabrication platform based on shadow walls that enables the in-situ, selective and consecutive depositions of superconductors and normal metals to form normal-superconducting junctions. Crucially, this method allows to realize devices in a single shot, eliminating fabrication steps after the synthesis of the fragile semiconductor/superconductor interface. At the atomic level, all investigated devices reveal a sharp and defect-free semiconducting-superconducting interface and, correspondingly, we measure electrically a hard induced superconducting gap. While our advancement is of crucial importance for enhancing the yield of complex hybrid devices, it also offers a straightforward route to explore new material combinations for hybrid devices.
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Submitted 14 September, 2020;
originally announced September 2020.
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Shadow-wall lithography of ballistic superconductor-semiconductor quantum devices
Authors:
Sebastian Heedt,
Marina Quintero-Pérez,
Francesco Borsoi,
Alexandra Fursina,
Nick van Loo,
Grzegorz P. Mazur,
Michał P. Nowak,
Mark Ammerlaan,
Kongyi Li,
Svetlana Korneychuk,
Jie Shen,
May An Y. van de Poll,
Ghada Badawy,
Sasa Gazibegovic,
Kevin van Hoogdalem,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
The realization of a topological qubit calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of novel quantum devices and ultimately topological qubits whi…
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The realization of a topological qubit calls for advanced techniques to readily and reproducibly engineer induced superconductivity in semiconductor nanowires. Here, we introduce an on-chip fabrication paradigm based on shadow walls that offers substantial advances in device quality and reproducibility. It allows for the implementation of novel quantum devices and ultimately topological qubits while eliminating many fabrication steps such as lithography and etching. This is critical to preserve the integrity and homogeneity of the fragile hybrid interfaces. The approach simplifies the reproducible fabrication of devices with a hard induced superconducting gap and ballistic normal-/superconductor junctions. Large gate-tunable supercurrents and high-order multiple Andreev reflections manifest the exceptional coherence of the resulting nanowire Josephson junctions. Our approach enables, in particular, the realization of 3-terminal devices, where zero-bias conductance peaks emerge in a magnetic field concurrently at both boundaries of the one-dimensional hybrids.
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Submitted 28 July, 2020;
originally announced July 2020.
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Field effect enhancement in buffered quantum nanowire networks
Authors:
Filip Krizek,
Joachim E. Sestoft,
Pavel Aseev,
Sara Marti-Sanchez,
Saulius Vaitiekenas,
Lucas Casparis,
Sabbir A. Khan,
Yu Liu,
Tomas Stankevic,
Alexander M. Whiticar,
Alexandra Fursina,
Frenk Boekhout,
Rene Koops,
Emanuele Uccelli,
Leo P. Kouwenhoven,
Charles M. Marcus,
Jordi Arbiol,
Peter Krogstrup
Abstract:
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geomet…
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III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.
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Submitted 5 April, 2018; v1 submitted 21 February, 2018;
originally announced February 2018.
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Sequential electron transport and vibrational excitations in an organic molecule coupled to few-kayer graphene electrodes
Authors:
E. Burzurí,
J. O. Island,
R. Diaz-Torres,
A. Fursina,
A. Gonzalez-Campo,
O. Roubeau,
S. J. Teat,
N. Aliaga-Alcalde,
E. Ruiz,
H. S. J. van der Zant
Abstract:
Graphene electrodes are promising candidates to improve reproducibility and stability in molecular electronics through new electrode-molecule anchoring strategies. Here we report sequential electron transport in few-layer graphene transistors containing individual curcuminoid-based molecules anchored to the electrodes via pi-pi orbital bonding. We show the coexistence of inelastic co-tunneling exc…
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Graphene electrodes are promising candidates to improve reproducibility and stability in molecular electronics through new electrode-molecule anchoring strategies. Here we report sequential electron transport in few-layer graphene transistors containing individual curcuminoid-based molecules anchored to the electrodes via pi-pi orbital bonding. We show the coexistence of inelastic co-tunneling excitations with single-electron transport physics owing to an intermediate molecule-electrode coupling; we argue that an intermediate electron-phonon coupling is the origin of these vibrational-assisted excitations. These experimental observations are complemented with density functional theory calculations to model electron transport and the interaction between electrons and vibrational modes of the curcuminoid molecule. We find that the calculated vibrational modes of the molecule are in agreement with the experimentally observed excitations.
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Submitted 4 February, 2016;
originally announced February 2016.
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Statistical distribution of the electric field driven switching of the Verwey state in Fe3O4
Authors:
A. A. Fursina,
R. G. S. Sofin,
I. V. Shvets,
D. Natelson
Abstract:
The insulating state of magnetite (Fe$_{3}$O$_{4}$) can be disrupted by a sufficiently large dc electric field. Pulsed measurements are used to examine the kinetics of this transition. Histograms of the switching voltage show a transition width that broadens as temperature is decreased, consistent with trends seen in other systems involving "unpinning" in the presence of disorder. The switching di…
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The insulating state of magnetite (Fe$_{3}$O$_{4}$) can be disrupted by a sufficiently large dc electric field. Pulsed measurements are used to examine the kinetics of this transition. Histograms of the switching voltage show a transition width that broadens as temperature is decreased, consistent with trends seen in other systems involving "unpinning" in the presence of disorder. The switching distributions are also modified by an external magnetic field on a scale comparable to that required to reorient the magnetization.
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Submitted 3 January, 2012;
originally announced January 2012.
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Contact effects on transport in magnetite, an archetypal correlated transition metal oxide
Authors:
A. A. Fursina,
R. G. S. Sofin,
I. V. Shvets,
D. Natelson
Abstract:
Multiterminal measurements have typically been employed to examine electronic properties of strongly correlated electronic materials such as transition metal oxides without the influence of contact effects. In contrast, in this work we investigate the interface properties of Fe$_3$O$_4$ with different metals, with the contact effects providing a window on the physics at work in the correlated oxid…
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Multiterminal measurements have typically been employed to examine electronic properties of strongly correlated electronic materials such as transition metal oxides without the influence of contact effects. In contrast, in this work we investigate the interface properties of Fe$_3$O$_4$ with different metals, with the contact effects providing a window on the physics at work in the correlated oxide. Contact resistances are determined by means of four-terminal electrical measurements as a function of source voltage and temperature. Contact resistances vary systematically with the work function of the electrode metal, $φ(M)$, $M=$Cu, Au and Pt, with higher work function yielding lower contact resistance. This trend and the observation that contact resistances are directly proportional to the Fe$_3$O$_4$ resistivity are consistent with modeling the oxide as an effective $p$-type semiconductor with hopping transport. The jumps in contact resistance values at the bias-driven insulator-metal transition have a similar trend with $φ$($M$), consistent with the transition mechanism of charge gap closure by electric field.
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Submitted 29 November, 2010;
originally announced November 2010.
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Interplay of bulk and interface effects in the electric-field driven transition in magnetite
Authors:
A. A. Fursina,
R. G. S. Sofin,
I. V. Shvets,
D. Natelson
Abstract:
Contact effects in devices incorporating strongly-correlated electronic materials are comparatively unexplored. We have investigated the electrically-driven phase transition in magnetite (100) thin films by four-terminal methods. In the lateral configuration, the channel length is less than 2 $μ$m, and voltage-probe wires $\sim$100 nm in width are directly patterned within the channel. Multilead…
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Contact effects in devices incorporating strongly-correlated electronic materials are comparatively unexplored. We have investigated the electrically-driven phase transition in magnetite (100) thin films by four-terminal methods. In the lateral configuration, the channel length is less than 2 $μ$m, and voltage-probe wires $\sim$100 nm in width are directly patterned within the channel. Multilead measurements quantitatively separate the contributions of each electrode interface and the magnetite channel. We demonstrate that on the onset of the transition contact resistances at both source and drain electrodes and the resistance of magnetite channel decrease abruptly. Temperature dependent electrical measurements below the Verwey temperature indicate thermally activated transport over the charge gap. The behavior of the magnetite system at a transition point is consistent with a theoretically predicted transition mechanism of charge gap closure by electric field.
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Submitted 29 December, 2009;
originally announced December 2009.
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The origin of hysteresis in resistive switching in magnetite is Joule heating
Authors:
A. A. Fursina,
R. G. S. Sofin,
I. V. Shvets,
D. Natelson
Abstract:
In many transition metal oxides the electrical resistance is observed to undergo dramatic changes induced by large biases. In magnetite, Fe$_3$O$_4$, below the Verwey temperature, an electric field driven transition to a state of lower resistance was recently found, with hysteretic current-voltage response. We report the results of pulsed electrical conduction measurements in epitaxial magnetite…
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In many transition metal oxides the electrical resistance is observed to undergo dramatic changes induced by large biases. In magnetite, Fe$_3$O$_4$, below the Verwey temperature, an electric field driven transition to a state of lower resistance was recently found, with hysteretic current-voltage response. We report the results of pulsed electrical conduction measurements in epitaxial magnetite thin films. We show that while the high- to low-resistance transition is driven by electric field, the hysteresis observed in $I-V$ curves results from Joule heating in the low resistance state. The shape of the hysteresis loop depends on pulse parameters, and reduces to a hysteresis-free "jump" of the current provided thermal relaxation is rapid compared to the time between voltage pulses. A simple relaxation time thermal model is proposed that captures the essentials of the hysteresis mechanism.
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Submitted 21 May, 2009;
originally announced May 2009.
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Nanogaps with very large aspect ratios for electrical measurements
Authors:
A. Fursina,
S. Lee,
R. G. S. Sofin,
I. V. Shvets,
D. Natelson
Abstract:
For nanoscale electrical characterization and device fabrication it is often desirable to fabricate planar metal electrodes separated by large aspect ratio gaps with interelectrode distances well below 100 nm. We demonstrate a self-aligned process to accomplish this goal using a thin Cr film as a sacrificial etch layer. The resulting gaps can be as small as 10 nm and have aspect ratios exceeding…
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For nanoscale electrical characterization and device fabrication it is often desirable to fabricate planar metal electrodes separated by large aspect ratio gaps with interelectrode distances well below 100 nm. We demonstrate a self-aligned process to accomplish this goal using a thin Cr film as a sacrificial etch layer. The resulting gaps can be as small as 10 nm and have aspect ratios exceeding 1000, with excellent interelectrode isolation. Such Ti/Au electrodes are demonstrated on Si substrates and are used to examine a voltage-driven transition in magnetite nanostructures. This shows the utility of this fabrication approach even with relatively reactive substrates.
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Submitted 20 February, 2008;
originally announced February 2008.
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Electrically-driven phase transition in magnetite nanostructures
Authors:
Sungbae Lee,
Alexandra Fursina,
John T. Mayo,
Cafer T. Yavuz,
Vicki L. Colvin,
R. G. Sumesh Sofin,
Igor V. Shvets,
Douglas Natelson
Abstract:
Magnetite (Fe$_{3}$O$_{4}$), an archetypal transition metal oxide, has been used for thousands of years, from lodestones in primitive compasses[1] to a candidate material for magnetoelectronic devices.[2] In 1939 Verwey[3] found that bulk magnetite undergoes a transition at T$_{V}$ $\approx$ 120 K from a high temperature "bad metal" conducting phase to a low-temperature insulating phase. He sugg…
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Magnetite (Fe$_{3}$O$_{4}$), an archetypal transition metal oxide, has been used for thousands of years, from lodestones in primitive compasses[1] to a candidate material for magnetoelectronic devices.[2] In 1939 Verwey[3] found that bulk magnetite undergoes a transition at T$_{V}$ $\approx$ 120 K from a high temperature "bad metal" conducting phase to a low-temperature insulating phase. He suggested[4] that high temperature conduction is via the fluctuating and correlated valences of the octahedral iron atoms, and that the transition is the onset of charge ordering upon cooling. The Verwey transition mechanism and the question of charge ordering remain highly controversial.[5-11] Here we show that magnetite nanocrystals and single-crystal thin films exhibit an electrically driven phase transition below the Verwey temperature. The signature of this transition is the onset of sharp conductance switching in high electric fields, hysteretic in voltage. We demonstrate that this transition is not due to local heating, but instead is due to the breakdown of the correlated insulating state when driven out of equilibrium by electrical bias. We anticipate that further studies of this newly observed transition and its low-temperature conducting phase will shed light on how charge ordering and vibrational degrees of freedom determine the ground state of this important compound.
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Submitted 12 November, 2007;
originally announced November 2007.
