Showing 1–44 of 44 results for author: Fuhrer, A

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures

Authors: L. Massai, B. Hetényi, M. Mergenthaler, F. J. Schupp, L. Sommer, S. Paredes, S. W. Bedell, P. Harvey-Collard, G. Salis, A. Fuhrer, N. W. Hendrickx

Abstract: Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with… ▽ More Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with reduced hyperfine or charge noise sensitivity, the latter ultimately limits coherence, underlining the importance of understanding and reducing charge noise at its source. In this work, we study the voltage-induced hysteresis commonly observed in SiGe-based quantum devices and show that the dominant charge fluctuators are localized at the semiconductor-oxide interface. By applying increasingly negative gate voltages to Hall bar and quantum dot devices, we investigate how the hysteretic filling of interface traps impacts transport metrics and charge noise. We find that the gate-induced accumulation and trapping of charge at the SiGe-oxide interface leads to an increased electrostatic disorder, as probed by transport measurements, as well as the activation of low-frequency relaxation dynamics, resulting in slow drifts and increased charge noise levels. Our results highlight the importance of a conservative device tuning strategy and reveal the critical role of the semiconductor-oxide interface in SiGe heterostructures for spin qubit applications. △ Less

Submitted 9 October, 2023; originally announced October 2023.

Capacitive crosstalk in gate-based dispersive sensing of spin qubits

Authors: Eoin G. Kelly, Alexei Orekhov, Nico Hendrickx, Matthias Mergenthaler, Felix Schupp, Stephan Paredes, Rafael S. Eggli, Andreas V. Kuhlmann, Patrick Harvey-Collard, Andreas Fuhrer, Gian Salis

Abstract: In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach… ▽ More In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach tank circuits with superconducting NbN inductors and internal quality factors $Q_{\mathrm{i}}$>1000 to the interdot barrier gate of silicon double quantum dot devices. Measuring the interdot transition in transport, we quantify radio-frequency crosstalk that results in a ring-up of the resonator when neighbouring plunger gates are driven with frequency components matching the resonator frequency. This effect complicates qubit operation and scales with the loaded quality factor of the resonator, the mutual capacitance between device gate electrodes, and with the inverse of the parasitic capacitance to ground. Setting qubit frequencies below the resonator frequency is expected to substantially suppress this type of crosstalk. △ Less

Submitted 19 September, 2023; originally announced September 2023.

Comments: 7 pages, 4 figures, supplementary information

A Generalizable TCAD Framework for Silicon FinFET Spin Qubit Devices with Electrical Control

Authors: Qian Ding, Andreas V. Kuhlmann, Andreas Fuhrer, Andreas Schenk

Abstract: We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain, from definition of the quantum dot confinement potential with DC bias voltages, to calculation of microwave response electric field at qubit locations using small-… ▽ More We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain, from definition of the quantum dot confinement potential with DC bias voltages, to calculation of microwave response electric field at qubit locations using small-signal AC analysis. An average field polarization vector at each quantum dot is extracted via a post-processing step. We demonstrate functionality of this approach by simulation of a recently reported two-qubit device in the form of a 5-gate silicon FinFET. The impact of the number of holes in each quantum dot on the MW response E-field polarization direction is further investigated for this device. The framework is easily generalizable to study future multi-qubit large-scale systems. △ Less

Submitted 5 June, 2023; originally announced June 2023.

Comments: 4 pages, 6 figures, submitted to conference SISPAD 2022

Journal ref: Solid-State Electronics 200 (2023) 108550

Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity

Authors: N. W. Hendrickx, L. Massai, M. Mergenthaler, F. Schupp, S. Paredes, S. W. Bedell, G. Salis, A. Fuhrer

Abstract: Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in germanium have shown great promise, with recent demonstrations of fast and high-fidelity qubit operations. However, the mechanisms and anisotropies that underlie… ▽ More Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in germanium have shown great promise, with recent demonstrations of fast and high-fidelity qubit operations. However, the mechanisms and anisotropies that underlie qubit driving and decoherence are still mostly unclear. Here, we report on the highly anisotropic heavy-hole $g$-tensor and its dependence on electric fields, allowing us to relate both qubit driving and decoherence to an electric modulation of the $g$-tensor. We also confirm the predicted Ising-type hyperfine interaction but show that qubit coherence is ultimately limited by $1/f$ charge noise. Finally, we operate the qubit at low magnetic field and measure a dephasing time of $T_2^*=9.2$ $μ$s, while maintaining a single-qubit gate fidelity of 99.94 %, that remains well above 99 % at an operation temperature T>1 K. This understanding of qubit driving and decoherence mechanisms are key for the design and operation of scalable and highly coherent hole qubit arrays. △ Less

Submitted 24 November, 2023; v1 submitted 22 May, 2023; originally announced May 2023.

Comments: Main text: 12 pages, 6 figures, 50+9 references. Supplementary information is included at the end: 9 pages, 11 figures

Journal ref: Nature Materials (2024)

Phase driving hole spin qubits

Authors: Stefano Bosco, Simon Geyer, Leon C. Camenzind, Rafael S. Eggli, Andreas Fuhrer, Richard J. Warburton, Dominik M. Zumbühl, J. Carlos Egues, Andreas V. Kuhlmann, Daniel Loss

Abstract: The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism of hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase driving at radio frequencies, orders of magnitude slower than the microwave qubi… ▽ More The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism of hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase driving at radio frequencies, orders of magnitude slower than the microwave qubit frequency, induces highly non-trivial spin dynamics, violating the Rabi resonance condition. By using a qubit integrated in a silicon fin field-effect transistor (Si FinFET), we demonstrate a controllable suppression of resonant Rabi oscillations, and their revivals at tunable sidebands. These sidebands enable alternative qubit control schemes using global fields and local far-detuned pulses, facilitating the design of dense large-scale qubit architectures with local qubit addressability. Phase driving also decouples Rabi oscillations from noise, an effect due to a gapped Floquet spectrum and can enable Floquet engineering high-fidelity gates in future quantum processors. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Two-qubit logic with anisotropic exchange in a fin field-effect transistor

Authors: Simon Geyer, Bence Hetényi, Stefano Bosco, Leon C. Camenzind, Rafael S. Eggli, Andreas Fuhrer, Daniel Loss, Richard J. Warburton, Dominik M. Zumbühl, Andreas V. Kuhlmann

Abstract: Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. The demonstration of a two-qubit quantum gate in a silicon fin field-effect transistor, that is, the workhorse device of today's semiconductor… ▽ More Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. The demonstration of a two-qubit quantum gate in a silicon fin field-effect transistor, that is, the workhorse device of today's semiconductor industry, has remained an open challenge. Here, we demonstrate a controlled rotation two-qubit gate on hole spins in an industry-compatible device. A short gate time of 24 ns is achieved. The quantum logic exploits an exchange interaction that can be tuned from above 500 MHz to close-to-off. Significantly, the exchange is strikingly anisotropic. By developing a general theory, we show that the anisotropy arises as a consequence of a strong spin-orbit interaction. Upon tunnelling from one quantum dot to the other, the spin is rotated by almost 90 degrees. The exchange Hamiltonian no longer has Heisenberg form and is engineered in such a way that there is no trade-off between speed and fidelity of the two-qubit gate. This ideal behaviour applies over a wide range of magnetic field orientations rendering the concept robust with respect to variations from qubit to qubit. Our work brings hole spin qubits in silicon transistors a step closer to the realization of a large-scale quantum computer. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Large even-odd spacing and $g$-factor anisotropy in PbTe quantum dots

Authors: S. C. ten Kate, M. F. Ritter, A. Fuhrer, J. Jung, S. G. Schellingerhout, E. P. A. M. Bakkers, H. Riel, F. Nichele

Abstract: PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-o… ▽ More PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron $g$-factor as a function of magnetic field direction. We find the $g$-factor tensor to be highly anisotropic, with principal $g$-factors ranging from 0.9 to 22.4, and to depend on the electronic configuration of the devices. These results indicate strong Rashba spin-orbit interaction in our PbTe quantum dots. △ Less

Submitted 13 May, 2022; originally announced May 2022.

Report number: Nano Lett. 2022, 22, 17, 7049--7056

On the Role of Out-of-Equilibrium Phonons in Gated Superconducting Switches

Authors: M. F. Ritter, N. Crescini, D. Z. Haxell, M. Hinderling, H. Riel, C. Bruder, A. Fuhrer, F. Nichele

Abstract: Recent experiments suggest the possibility to tune superconductivity in metallic nanowires by application of modest gate voltages. It is largely debated whether the effect is due to an electric field at the superconductor surface or small currents of high-energy electrons. We shed light on this matter by studying the suppression of superconductivity in sample geometries where the roles of electric… ▽ More Recent experiments suggest the possibility to tune superconductivity in metallic nanowires by application of modest gate voltages. It is largely debated whether the effect is due to an electric field at the superconductor surface or small currents of high-energy electrons. We shed light on this matter by studying the suppression of superconductivity in sample geometries where the roles of electric field and electron-current flow can be clearly separated. Our results show that suppression of superconductivity does not depend on the presence or absence of an electric field at the surface of the nanowire, but requires a current of high-energy electrons. The suppression is most efficient when electrons are injected into the nanowire, but similar results are obtained also when electrons are passed between two remote electrodes at a distance $d$ to the nanowire (with $d$ in excess of $1~\mathrm{μm}$). In the latter case, high-energy electrons decay into phonons which propagate through the substrate and affect superconductivity in the nanowire by generating quasiparticles. We show that this process involves a non-thermal phonon distribution, with marked differences from the loss of superconductivity due to Joule heating near the nanowire or an increase in the bath temperature. △ Less

Submitted 3 June, 2021; originally announced June 2021.

Journal ref: Nature Electronics 5, 71-77 (2022)

Effects of surface treatments on flux tunable transmon qubits

Authors: M. Mergenthaler, C. Müller, M. Ganzhorn, S. Paredes, P. Müller, G. Salis, V. P. Adiga, M. Brink, M. Sandberg, J. B. Hertzberg, S. Filipp, A. Fuhrer

Abstract: One of the main limitations in state-of-the art solid-state quantum processors are qubit decoherence and relaxation due to noise in their local environment. For the field to advance towards full fault-tolerant quantum computing, a better understanding of the underlying microscopic noise sources is therefore needed. Adsorbates on surfaces, impurities at interfaces and material defects have been ide… ▽ More One of the main limitations in state-of-the art solid-state quantum processors are qubit decoherence and relaxation due to noise in their local environment. For the field to advance towards full fault-tolerant quantum computing, a better understanding of the underlying microscopic noise sources is therefore needed. Adsorbates on surfaces, impurities at interfaces and material defects have been identified as sources of noise and dissipation in solid-state quantum devices. Here, we use an ultra-high vacuum package to study the impact of vacuum loading, UV-light exposure and ion irradiation treatments on coherence and slow parameter fluctuations of flux tunable superconducting transmon qubits. We analyse the effects of each of these surface treatments by comparing averages over many individual qubits and measurements before and after treatment. The treatments studied do not significantly impact the relaxation rate $Γ_1$ and the echo dephasing rate $Γ_2^\textrm{e}$, except for Ne ion bombardment which reduces $Γ_1$. In contrast, flux noise parameters are improved by removing magnetic adsorbates from the chip surfaces with UV-light and NH$_3$ treatments. Additionally, we demonstrate that SF$_6$ ion bombardment can be used to adjust qubit frequencies in-situ and post fabrication without affecting qubit coherence at the sweet spot. △ Less

Submitted 14 March, 2021; originally announced March 2021.

Journal ref: npj Quantum Information 7, 157 (2021)

A hole spin qubit in a fin field-effect transistor above 4 kelvin

Authors: Leon C. Camenzind, Simon Geyer, Andreas Fuhrer, Richard J. Warburton, Dominik M. Zumbühl, Andreas V. Kuhlmann

Abstract: The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate serves as a spin qubit. Such an approach potentially allow… ▽ More The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate serves as a spin qubit. Such an approach potentially allows the quantum hardware and its classical control electronics to be integrated on the same chip. However, this requires qubit operation at temperatures above 1K, where the cooling overcomes heat dissipation. Here, we show that silicon FinFETs can host spin qubits operating above 4K. We achieve fast electrical control of hole spins with driving frequencies up to 150MHz, single-qubit gate fidelities at the fault-tolerance threshold, and a Rabi oscillation quality factor greater than 87. Our devices feature both industry compatibility and quality, and are fabricated in a flexible and agile way that should accelerate further development. △ Less

Submitted 6 February, 2023; v1 submitted 12 March, 2021; originally announced March 2021.

Ultrahigh Vacuum Packaging and Surface Cleaning for Quantum Devices

Authors: M. Mergenthaler, S. Paredes, P. Müller, C. Müller, S. Filipp, M. Sandberg, J. Hertzberg, V. P. Adiga, M. Brink, A. Fuhrer

Abstract: We describe design, implementation and performance of an ultra-high vacuum (UHV) package for superconducting qubit chips or other surface sensitive quantum devices. The UHV loading procedure allows for annealing, ultra-violet light irradiation, ion milling and surface passivation of quantum devices before sealing them into a measurement package. The package retains vacuum during the transfer to cr… ▽ More We describe design, implementation and performance of an ultra-high vacuum (UHV) package for superconducting qubit chips or other surface sensitive quantum devices. The UHV loading procedure allows for annealing, ultra-violet light irradiation, ion milling and surface passivation of quantum devices before sealing them into a measurement package. The package retains vacuum during the transfer to cryogenic temperatures by active pumping with a titanium getter layer. We characterize the treatment capabilities of the system and present measurements of flux tunable qubits with an average T$_1=84~μ$s and T$^{echo}_2=134~μ$s after vacuum-loading these samples into a bottom loading dilution refrigerator in the UHV-package. △ Less

Submitted 22 October, 2020; originally announced October 2020.

Comments: 5 pages, 6 figures

Journal ref: Review of Scientific Instruments 92, 025121 (2021)

Silicon quantum dot devices with a self-aligned second gate layer

Authors: Simon Geyer, Leon C. Camenzind, Lukas Czornomaz, Veeresh Deshpande, Andreas Fuhrer, Richard J. Warburton, Dominik M. Zumbühl, Andreas V. Kuhlmann

Abstract: We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate hole transport and observe current rectification due to Pauli spin blockade. Magnetic field measurements indicate that hole spin relaxation is domina… ▽ More We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate hole transport and observe current rectification due to Pauli spin blockade. Magnetic field measurements indicate that hole spin relaxation is dominated by spin-orbit interaction, and enable us to determine the effective hole $g$-factor $\simeq1.6$. From an avoided singlet-triplet crossing, occurring at high magnetic field, the spin-orbit coupling strength $\simeq0.27$meV is obtained, promising fast and all-electrical spin control. △ Less

Submitted 30 July, 2020; originally announced July 2020.

A superconducting switch actuated by injection of high energy electrons

Authors: M. F. Ritter, A. Fuhrer, D. Z. Haxell, S. Hart, P. Gumann, H. Riel, F. Nichele

Abstract: Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky, lossy or require large source-drain and gate currents for operation, making them unsuitable for many applications and difficult to interface to semiconducting… ▽ More Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky, lossy or require large source-drain and gate currents for operation, making them unsuitable for many applications and difficult to interface to semiconducting devices. Here we present an electrically controlled superconducting switch based on a metallic nanowire. Transition from superconducting to resistive state is realized by tunneling of high-energy electrons from a gate contact through an insulating barrier. Operating gate currents are several orders of magnitude smaller than the nanowire critical source-drain current, effectively resulting in a voltage-controlled device. This superconducting switch is fast, self-resets from normal to superconducting state, and can operate in large magnetic fields, making it an ideal component for low-power cryogenic applications and quantum computing architectures. △ Less

Submitted 1 May, 2020; originally announced May 2020.

Journal ref: Nat. Commun. 12, 1266 (2021)

P-type $δ$-doping with Diborane on Si(001) for STM Based Dopant Device Fabrication

Authors: Tomáš Škereň, Sigrun Köster, Bastien Douhard, Claudia Fleischmann, Andreas Fuhrer

Abstract: Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $δ$-layers, fabricated by gas-phase doping, are characterized with low-temperature transport experiments. Sheet resistivities as low as $300\thinspaceΩ$ are found. Adsorption, incorporation and surface di… ▽ More Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $δ$-layers, fabricated by gas-phase doping, are characterized with low-temperature transport experiments. Sheet resistivities as low as $300\thinspaceΩ$ are found. Adsorption, incorporation and surface diffusion of the dopants are investigated by STM imaging and result in an upper bound of 2\,nm for the lithographic resolution which is also corroborated by fabricating a 7.5\,nm wide p-type nanowire and measuring its electrical properties. Finally, to demonstrate the feasibility of bipolar dopant device fabrication with this technique, we prepared a 100\,nm wide pn junction and show that its electrical behavior is similar to that of an Esaki diode. △ Less

Submitted 12 December, 2019; originally announced December 2019.

Comments: 19 pages, 5 figures

Journal ref: Nature Electronics (2020)

CMOS Platform for Atomic-Scale Device Fabrication

Authors: Tomas Skeren, Nikola Pascher, Arnaud Garnier, Patrick Reynaud, Emmanuel Rolland, Aurelie Thuaire, Daniel Widmer, Xavier Jehl, Andreas Fuhrer

Abstract: Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface assembly. However, this typically involves a complex process flow, stringent requirements for an ultra high vacuum environment, long fabrication times and, con… ▽ More Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface assembly. However, this typically involves a complex process flow, stringent requirements for an ultra high vacuum environment, long fabrication times and, consequently, limited throughput and device yield. Here, a device platform is developed that overcomes these limitations by integrating scanning probe based dopant device fabrication with a CMOS-compatible process flow. Silicon on insulator substrates are used featuring a reconstructed Si(001):H surface that is protected by a capping chip and has pre-implanted contacts ready for scanning tunneling microscope (STM) patterning. Processing in ultra-high vacuum is thus reduced to only a few critical steps which minimizes the complexity, time and effort required for fabrication of the nanoscale dopant devices. Subsequent reintegration of the samples into the CMOS process flow not only simplifies the post-processing but also opens the door to successful application of STM based dopant devices as a building block in more complex device architectures. Full functionality of this approach is demonstrated with magnetotransport measurements on degenerately doped STM patterned Si:P nanowires up to room temperature. △ Less

Submitted 1 October, 2019; originally announced October 2019.

Comments: 14 pages plus supplement

Journal ref: Nanotechnology, 29, 435302 (2018)

Ambipolar quantum dots in undoped silicon fin field-effect transistors

Authors: Andreas V. Kuhlmann, Veeresh Deshpande, Leon C. Camenzind, Dominik M. Zumbühl, Andreas Fuhrer

Abstract: We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and drain electrodes by a metallic nickel silicide with Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, either as classical… ▽ More We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and drain electrodes by a metallic nickel silicide with Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, either as classical field-effect or single-electron transistor. We implement a classical logic NOT gate at low temperature by tuning two interconnected transistors into opposite polarities. In the quantum regime, we demonstrate stable quantum dot operation in the few charge carrier Coulomb blockade regime for both electrons and holes. △ Less

Submitted 11 July, 2018; originally announced July 2018.

Journal ref: Appl. Phys. Lett. 113, 122107 (2018)

Superconducting grid-bus surface code architecture for hole-spin qubits

Authors: Simon E. Nigg, Andreas Fuhrer, Daniel Loss

Abstract: We present a scalable hybrid architecture for the 2D surface code combining superconducting resonators and hole-spin qubits in nanowires with tunable direct Rashba spin-orbit coupling. The back-bone of this architecture is a square lattice of capacitively coupled coplanar waveguide resonators each of which hosts a nanowire hole-spin qubit. Both the frequency of the qubits and their coupling to the… ▽ More We present a scalable hybrid architecture for the 2D surface code combining superconducting resonators and hole-spin qubits in nanowires with tunable direct Rashba spin-orbit coupling. The back-bone of this architecture is a square lattice of capacitively coupled coplanar waveguide resonators each of which hosts a nanowire hole-spin qubit. Both the frequency of the qubits and their coupling to the microwave field are tunable by a static electric field applied via the resonator center pin. In the dispersive regime, an entangling two-qubit gate can be realized via a third order process, whereby a virtual photon in one resonator is created by a first qubit, coherently transferred to a neighboring resonator, and absorbed by a second qubit in that resonator. Numerical simulations with state-of-the-art coherence times yield gate fidelities approaching the $99\%$ fault tolerance threshold. △ Less

Submitted 21 December, 2016; originally announced December 2016.

Comments: 5 pages, 3 figures + supplement

Journal ref: Phys. Rev. Lett. 118, 147701 (2017)

Heavy hole states in Germanium hut wires

Authors: Hannes Watzinger, Christoph Kloeffel, Lada Vukušić, Marta D. Rossell, Violetta Sessi, Josip Kukučka, Raimund Kirchschlager, Elisabeth Lausecker, Alisha Truhlar, Martin Glaser, Armando Rastelli, Andreas Fuhrer, Daniel Loss, Georgios Katsaros

Abstract: Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large a… ▽ More Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large anisotropy originates from a confined wave function which is of heavy hole character. A light hole admixture of less than 1% is estimated for the states of lowest energy, leading to a surprisingly large reduction of the out-of-plane g-factors. However, this tiny light hole contribution does not influence the spin lifetimes, which are expected to be very long, even in non isotopically purified samples. △ Less

Submitted 11 July, 2016; originally announced July 2016.

Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

Authors: Nikola Pascher, Szymon Hennel, Susanne Mueller, Andreas Fuhrer

Abstract: A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with $n$-type doping by phosphine. The four contacts have different separations ($d$ = 9, 12, 16 and 29 nm) to the central 6 nm $\times$ 6 nm QD island, leading to different tunnel and capaciti… ▽ More A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with $n$-type doping by phosphine. The four contacts have different separations ($d$ = 9, 12, 16 and 29 nm) to the central 6 nm $\times$ 6 nm QD island, leading to different tunnel and capacitive coupling. Cryogenic transport measurements in the Coulomb-blockade (CB) regime are used to characterize these tunnel barriers. We find that field enhancement near the apex of narrow dopant leads is an important effect that influences both barrier breakdown and the magnitude of the tunnel current in the CB transport regime. From CB-spectroscopy measurements, we extract the mutual capacitances between the QD and the four contacts, which scale inversely with the contact separation $d$. The capacitances are in excellent agreement with numerical values calculated from the pattern geometry in the hydrogen resist. We show that by engineering the source-drain tunnel barriers to be asymmetric, we obtain a much simpler excited-state spectrum of the QD, which can be directly linked to the orbital single-particle spectrum. △ Less

Submitted 8 February, 2016; originally announced February 2016.

Comments: 14 pages, 5 figures

Interplay of spin-orbit torque and thermoelectric effects in ferromagnet/normal metal bilayers

Authors: Can Onur Avci, Kevin Garello, Mihai Gabureac, Abhijit Ghosh, Andreas Fuhrer, Santos F. Alvarado, Pietro Gambardella

Abstract: We present harmonic transverse voltage measurements of current-induced thermoelectric and spin-orbit torque (SOT) effects in ferromagnet/normal metal bilayers, in which thermal gradients produced by Joule heating and SOT coexist and give rise to ac transverse signals with comparable symmetry and magnitude. Based on the symmetry and field-dependence of the transverse resistance, we develop a consis… ▽ More We present harmonic transverse voltage measurements of current-induced thermoelectric and spin-orbit torque (SOT) effects in ferromagnet/normal metal bilayers, in which thermal gradients produced by Joule heating and SOT coexist and give rise to ac transverse signals with comparable symmetry and magnitude. Based on the symmetry and field-dependence of the transverse resistance, we develop a consistent method to separate thermoelectric and SOT measurements. By addressing first ferromagnet/light metal bilayers with negligible spin-orbit coupling, we show that in-plane current injection induces a vertical thermal gradient whose sign and magnitude are determined by the resistivity difference and stacking order of the magnetic and nonmagnetic layers. We then study ferromagnet/heavy metal bilayers with strong spin-orbit coupling, showing that second harmonic thermoelectric contributions to the transverse voltage may lead to a significant overestimation of the antidamping SOT. We find that thermoelectric effects are very strong in Ta(6nm)/Co(2.5nm) and negligible in Pt(6nm)/Co(2.5nm) bilayers. After including these effects in the analysis of the transverse voltage, we find that the antidamping SOTs in these bilayers, after normalization to the magnetization volume, are comparable to those found in thinner Co layers with perpendicular magnetization, whereas the field-like SOTs are about an order of magnitude smaller. △ Less

Submitted 2 December, 2014; originally announced December 2014.

Comments: 26 pages, 6 figures, 1 table

Journal ref: Phys. Rev. B 90, 224427 (2014)

Evidence for Disorder Induced Delocalization in Graphite

Authors: L. Casparis, A. Fuhrer, D. Hug, D. Kölbl, D. M. Zumbühl

Abstract: We present electrical transport measurements in natural graphite and highly ordered pyrolytic graphite (HOPG), comparing macroscopic samples with exfoliated, nanofabricated specimens of nanometer thickness. The latter exhibit a very large c-axis resistivity $ρ_c$ -- much larger than expected from simple band theory -- and non-monotonic temperature dependence, similar to macroscopic HOPG, but in st… ▽ More We present electrical transport measurements in natural graphite and highly ordered pyrolytic graphite (HOPG), comparing macroscopic samples with exfoliated, nanofabricated specimens of nanometer thickness. The latter exhibit a very large c-axis resistivity $ρ_c$ -- much larger than expected from simple band theory -- and non-monotonic temperature dependence, similar to macroscopic HOPG, but in stark contrast to macroscopic natural graphite. A recent model of disorder-induced delocalization is consistent with our transport data. Furthermore, Micro-Raman spectroscopy reveals clearly reduced disorder in exfoliated samples and HOPG, as expected within the model -- therefore presenting further evidence for a novel paradigm of electronic transport in graphite. △ Less

Submitted 16 March, 2017; v1 submitted 12 January, 2013; originally announced January 2013.

Comments: 5 pages, 4 figures (color)

Breakdown of the Korringa Law of Nuclear Spin Relaxation in Metallic GaAs

Authors: D. Kölbl, D. M. Zumbühl, A. Fuhrer, G. Salis, S. F. Alvarado

Abstract: We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T1 times agree very well with NMR data available for T > 1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sub-linear temperature dependence 1/T1… ▽ More We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T1 times agree very well with NMR data available for T > 1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sub-linear temperature dependence 1/T1 ~ T^0.6 for 0.1 K < T < 10 K. Further, we investigate nuclear spin inhomogeneities. △ Less

Submitted 22 May, 2012; v1 submitted 21 May, 2012; originally announced May 2012.

Comments: 5 pages, 4 (color) figures. arXiv admin note: text overlap with arXiv:1109.6332

Journal ref: Phys. Rev. Lett. 109, 086601 (2012)

Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy

Authors: A. Fuhrer, F. J. Rueß, N. Moll, A. Curioni, D. Widmer

Abstract: At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form symmetric dimer wires at room temperature, we show that Mn wires have an asymmetric appearance and pin the Si dimers nearby. We find that an atomic configuration with a Mn trimer unit cell can explain these observations due to the interplay b… ▽ More At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form symmetric dimer wires at room temperature, we show that Mn wires have an asymmetric appearance and pin the Si dimers nearby. We find that an atomic configuration with a Mn trimer unit cell can explain these observations due to the interplay between the Si dimer buckling phase near the wire and the orientation of the Mn trimer. We study the resulting four wire configurations in detail using high-resolution scanning tunneling microscopy (STM) imaging and compare our findings with STM images simulated by density functional theory. △ Less

Submitted 2 May, 2012; originally announced May 2012.

Comments: 4 pages, 4 figures

The Nuclear Spin Environment in Lateral GaAs Spin Valves

Authors: D. Kölbl, D. M. Zumbühl, A. Fuhrer, G. Salis, S. F. Alvarado

Abstract: The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can give rise to detrimental effects such as spin relaxation and decoherence. Here, we use an all-electrical, lateral GaAs spin valve to manipulate and investigate the… ▽ More The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can give rise to detrimental effects such as spin relaxation and decoherence. Here, we use an all-electrical, lateral GaAs spin valve to manipulate and investigate the inherent nuclear spin system. Hanle satellites are used to determine the nuclear spin relaxation rates for the previously unexplored temperature range down to 100 mK, giving T1 times as long as 3 hours. Despite metallic temperature dependence of resistivity, the observed relaxation rates show a sub-linear temperature dependence. This contrasts the Korringa relaxation mechanism observed in metals but is not inconsistent with hyperfine-mediated relaxation in a disordered, interacting conductor not far from the metal-insulator transition. We discuss possible relaxation mechanisms and further investigate inhomogeneities in the nuclear spin polarization. △ Less

Submitted 1 October, 2011; v1 submitted 28 September, 2011; originally announced September 2011.

Comments: 6 pages, 4 (color) figures, Fig 1 reloaded on 111001

Spin-injection spectra of CoFe/GaAs contacts: dependence on Fe concentration, interface and annealing conditions

Authors: G. Salis, S. F. Alvarado, A. Fuhrer

Abstract: Spin injection from Co70Fe30 and Fe contacts into bulk GaAs(001) epilayers is studied experimentally. Using nonlocal measurements, the spin polarization of the differential conductance is determined as a function of the bias voltage applied across the injection interface. The spectra reveal an interface-related minority-spin peak at forward bias and a majority-spin peak at reverse bias, and are ve… ▽ More Spin injection from Co70Fe30 and Fe contacts into bulk GaAs(001) epilayers is studied experimentally. Using nonlocal measurements, the spin polarization of the differential conductance is determined as a function of the bias voltage applied across the injection interface. The spectra reveal an interface-related minority-spin peak at forward bias and a majority-spin peak at reverse bias, and are very similar, but shifted in energy, for Co70Fe30 and for Fe contacts. An increase of the spin-injection efficiency and a shift of the spectrum correlate with the Ga-to-As ratio at the interface between CoFe and GaAs. △ Less

Submitted 5 May, 2011; originally announced May 2011.

Comments: 4 pages, 4 figures

Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin injection device

Authors: G. Salis, A. Fuhrer, R. R. Schlittler, L. Gross, S. F. Alvarado

Abstract: The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with temperature at a rate of 0.018\,K$^{-1}$. Post-growth annealing at 440\,K increases the spin signal at low temperatures, but the decay rate also incre… ▽ More The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with temperature at a rate of 0.018\,K$^{-1}$. Post-growth annealing at 440\,K increases the spin signal at low temperatures, but the decay rate also increases to 0.030\,K$^{-1}$. From measurements of the diffusion constant and the spin lifetime in the GaAs channel, we conclude that sample annealing modifies the temperature dependence of the spin transfer efficiency at injection and detection contacts. Surprisingly, the spin transfer efficiency increases in samples that exhibit minority-spin injection. △ Less

Submitted 7 April, 2010; originally announced April 2010.

Comments: 10 pages, 4 figures

Probing confined phonon modes by transport through a nanowire double quantum dot

Authors: C. Weber, A. Fuhrer, C. Fasth, G. Lindwall, L. Samuelson, A. Wacker

Abstract: Strong radial confinement in semiconductor nanowires leads to modified electronic and phononic energy spectra. We analyze the current response to the interplay between quantum confinement effects of the electron and phonon systems in a gate-defined double quantum dot in a semiconductor nanowire. We show that current spectroscopy of inelastic transitions between the two quantum dots can be used a… ▽ More Strong radial confinement in semiconductor nanowires leads to modified electronic and phononic energy spectra. We analyze the current response to the interplay between quantum confinement effects of the electron and phonon systems in a gate-defined double quantum dot in a semiconductor nanowire. We show that current spectroscopy of inelastic transitions between the two quantum dots can be used as an experimental probe of the confined phonon environment. The resulting discrete peak structure in the measurements is explained by theoretical modeling of the confined phonon mode spectrum, where the piezoelectric coupling is of crucial importance. △ Less

Submitted 15 February, 2010; v1 submitted 9 September, 2009; originally announced September 2009.

Comments: 4 pages, 4 figures; final version

Journal ref: Phys. Rev. Lett. 104, 036801 (2010)

Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices

Authors: G. Salis, A. Fuhrer, S. F. Alvarado

Abstract: The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between conduction electrons and dynamically polarized nuclear spins. The perpendicular component of the nuclear Overhauser field depolarizes electron spins near zero in… ▽ More The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between conduction electrons and dynamically polarized nuclear spins. The perpendicular component of the nuclear Overhauser field depolarizes electron spins near zero in-plane external magnetic field, and can suppress such dephasing when antialigned with the external field, leading to satellite peaks in a Hanle measurement. The features observed agree well with a Monte Carlo simulation of the spin diffusion equation including hyperfine interaction, and are used to study the nuclear spin dynamics and relate it to the spin polarization of injected electrons. △ Less

Submitted 3 August, 2009; originally announced August 2009.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 80, 115332 (2009)

Strong g-Factor Anisotropy in Hole Quantum Dots Defined in Ge/Si Nanowires

Authors: S. Roddaro, A. Fuhrer, C. Fasth, L. Samuelson, J. Xiang, C. M. Lieber

Abstract: We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five top gate electrodes with a periodicity of 80 nm, insulated from the wire by a 20 nm-thick HfO_2 dielectric film. Low-temperature transport measurements were us… ▽ More We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five top gate electrodes with a periodicity of 80 nm, insulated from the wire by a 20 nm-thick HfO_2 dielectric film. Low-temperature transport measurements were used to investigate the magnetic field dependence of Coulomb blockade peaks in a single quantum dot and indicate a strongly anisotropic g-factor with |g_para| = 0.60 +/- 0.03 and |g_perp| < 0.12. △ Less

Submitted 19 June, 2007; originally announced June 2007.

Comments: 5 pages, 3 figures

Direct Measurement of the Spin-Orbit Interaction in a Two-Electron InAs Nanowire Quantum Dot

Authors: C. Fasth, A. Fuhrer, L. Samuelson, Vitaly N. Golovach, Daniel Loss

Abstract: We demonstrate control of the electron number down to the last electron in tunable few-electron quantum dots defined in catalytically grown InAs nanowires. Using low temperature transport spectroscopy in the Coulomb blockade regime we propose a simple method to directly determine the magnitude of the spin-orbit interaction in a two-electron artificial atom with strong spin-orbit coupling. Due to… ▽ More We demonstrate control of the electron number down to the last electron in tunable few-electron quantum dots defined in catalytically grown InAs nanowires. Using low temperature transport spectroscopy in the Coulomb blockade regime we propose a simple method to directly determine the magnitude of the spin-orbit interaction in a two-electron artificial atom with strong spin-orbit coupling. Due to a large effective g-factor |g*|=8+/-1 the transition from singlet S to triplet T+ groundstate with increasing magnetic field is dominated by the Zeeman energy rather than by orbital effects. We find that the spin-orbit coupling mixes the T+ and S states and thus induces an avoided crossing with magnitude $Δ_{SO}$=0.25+/-0.05 meV. This allows us to calculate the spin-orbit length $λ_{SO}\approx$127 nm in such systems using a simple model. △ Less

Submitted 8 January, 2007; originally announced January 2007.

Comments: 21 pages, 7 figures, including supplementary notes

Fano effect in a ring-dot system with tunable coupling

Authors: A. Fuhrer, P. Brusheim, T. Ihn, M. Sigrist, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: Transport measurements are presented on a quantum ring that is tunnel-coupled to a quantum dot. When the dot is in the Coulomb blockade regime, but strongly coupled to the open ring, Fano line shapes are observed in the current through the ring, when the electron number in the dot changes by one. The symmetry of the Fano resonances is found to depend on the magnetic flux penetrating the area of… ▽ More Transport measurements are presented on a quantum ring that is tunnel-coupled to a quantum dot. When the dot is in the Coulomb blockade regime, but strongly coupled to the open ring, Fano line shapes are observed in the current through the ring, when the electron number in the dot changes by one. The symmetry of the Fano resonances is found to depend on the magnetic flux penetrating the area of the ring and on the strength of the ring-dot coupling. At temperatures above T=0.65 K the Fano effect disappears while the Aharonov-Bohm interference in the ring persists up to T=4.2 K. Good agreement is found between these experimental observations and a single channel scattering matrix model including decoherence in the dot. △ Less

Submitted 9 February, 2006; originally announced February 2006.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. B 73,205326 (2006)

Tunable effective g-factor in InAs nanowire quantum dots

Authors: M. T. Björk, A. Fuhrer, A. E. Hansen, M. W. Larsson, L. E. Jensen, L. Samuelson

Abstract: We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown by chemical beam epitaxy. The values of the electron g-factors of the first few electrons entering the dot are found to strongly depend on dot size and range from close to the InAs bulk… ▽ More We report tunneling spectroscopy measurements of the Zeeman spin splitting in InAs few-electron quantum dots. The dots are formed between two InP barriers in InAs nanowires with a wurtzite crystal structure grown by chemical beam epitaxy. The values of the electron g-factors of the first few electrons entering the dot are found to strongly depend on dot size and range from close to the InAs bulk value in large dots |g^*|=13 down to |g^*|=2.3 for the smallest dots. These findings are discussed in view of a simple model. △ Less

Submitted 19 July, 2005; originally announced July 2005.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 72, 201307 (2005)

Spatially resolved manipulation of single electrons in quantum dots using a scanned probe

Authors: A. Pioda, S. Kicin, T. Ihn, M. Sigrist, A. Fuhrer, K. Ensslin, A. Weichselbaum, S. E. Ulloa, M. Reinwald, W. Wegscheider

Abstract: The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot by moving the tip or by changing the tip bias voltage owing to the Coulomb-blockade effect. Spatial images of conductance resonances map the interaction potent… ▽ More The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot by moving the tip or by changing the tip bias voltage owing to the Coulomb-blockade effect. Spatial images of conductance resonances map the interaction potential between the tip and individual electronic quantum dot states. Under certain conditions this interaction is found to contain a tip-voltage induced and a tip-voltage independent contribution. △ Less

Submitted 10 November, 2004; originally announced November 2004.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 93, 216801 (2004)

Multiple layer local oxidation for fabricating semiconductor nanostructures

Authors: M. Sigrist, A. Fuhrer, T. Ihn, K. Ensslin, D. C. Driscoll, A. C. Gossard

Abstract: Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow two-dimensional electron gas is combined with the local oxidation of a thin titanium film evaporated on top. A four-terminal quantum dot and a double quantum dot system… ▽ More Coupled semiconductor nanostructures with a high degree of tunability are fabricated using local oxidation with a scanning force microscope. Direct oxidation of the GaAs surface of a Ga[Al]As heterostructure containing a shallow two-dimensional electron gas is combined with the local oxidation of a thin titanium film evaporated on top. A four-terminal quantum dot and a double quantum dot system with integrated charge readout are realized. The structures are tunable via in-plane gates formed by isolated regions in the electron gas and by mutually isolated regions of the Ti film acting as top gates. Coulomb blockade experiments demonstrate the high quality of this fabrication process. △ Less

Submitted 5 November, 2004; originally announced November 2004.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 85, 3558 (2004)

Kondo Effect in a Many-Electron Quantum Ring

Authors: A. Fuhrer, T. Ihn, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: The Kondo effect is investigated in a many-electron quantum ring as a function of magnetic field. For fields applied perpendicular to the plane of the ring a modulation of the Kondo effect with the Aharonov-Bohm period is observed. This effect is discussed in terms of the energy spectrum of the ring and the parametrically changing tunnel coupling. In addition, we use gate voltages to modify the… ▽ More The Kondo effect is investigated in a many-electron quantum ring as a function of magnetic field. For fields applied perpendicular to the plane of the ring a modulation of the Kondo effect with the Aharonov-Bohm period is observed. This effect is discussed in terms of the energy spectrum of the ring and the parametrically changing tunnel coupling. In addition, we use gate voltages to modify the ground-state spin of the ring. The observed splitting of the Kondo-related zero-bias anomaly in this configuration is tuned with an in-plane magnetic field. △ Less

Submitted 10 June, 2004; originally announced June 2004.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 93 (17) 176803 (2004)

Spin Effects in a Quantum Ring

Authors: T. Ihn, A. Fuhrer, K. Ensslin, M. Bichler, W. Wegscheider

Abstract: Recent experiments are reviewed that explore the spin states of a ring-shaped many-electron quantum dot. Coulomb-blockade spectroscopy is used to access the spin degree of freedom. The Zeeman effect observed for states with successive electron number allows to select possible sequences of spin ground states of the ring. Spin-paired orbital levels can be identified by probing their response to ma… ▽ More Recent experiments are reviewed that explore the spin states of a ring-shaped many-electron quantum dot. Coulomb-blockade spectroscopy is used to access the spin degree of freedom. The Zeeman effect observed for states with successive electron number allows to select possible sequences of spin ground states of the ring. Spin-paired orbital levels can be identified by probing their response to magnetic fields normal to the plane of the ring and electric fields caused by suitable gate voltages. This narrows down the choice of ground-state spin sequences. A gate-controlled singlet--triplet transition is identified and the size of the exchange interaction matrix element is determined. △ Less

Submitted 10 June, 2004; originally announced June 2004.

Comments: 13 pages, 3 figures, Proceedings of the QD2004 conference in Banff

Single-Electron Effects in a Coupled Dot-Ring System

Authors: L. Meier, A. Fuhrer, T. Ihn, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: Aharonov-Bohm oscillations are studied in the magnetoconductance of a micron-sized open quantum ring coupled capacitively to a Coulomb-blockaded quantum dot. As the plunger gate of the dot is modulated and tuned through a conductance resonance, the amplitude of the Aharonov-Bohm oscillations in the transconductance of the ring displays a minimum. We demonstrate that the effect is due to a single… ▽ More Aharonov-Bohm oscillations are studied in the magnetoconductance of a micron-sized open quantum ring coupled capacitively to a Coulomb-blockaded quantum dot. As the plunger gate of the dot is modulated and tuned through a conductance resonance, the amplitude of the Aharonov-Bohm oscillations in the transconductance of the ring displays a minimum. We demonstrate that the effect is due to a single-electron screening effect, rather than to dephasing. Aharonov-Bohm oscillations in a quantum ring can thus be used for the detection of single charges. △ Less

Submitted 4 June, 2004; originally announced June 2004.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 69, (R) 241302 (2004)

Magnetic field dependent transmission phase of a double dot system in a quantum ring

Authors: M. Sigrist, A. Fuhrer, T. Ihn, K. Ensslin, S. E. Ulloa, W. Wegscheider, M. Bichler

Abstract: The Aharonov-Bohm effect is measured in a four-terminal open ring geometry based on a Ga[Al]As heterostructure. Two quantum dots are embedded in the structure, one in each of the two interfering paths. The number of electrons in the two dots can be controlled independently. The transmission phase is measured as electrons are added to or taken away from the individual quantum dots. Although the m… ▽ More The Aharonov-Bohm effect is measured in a four-terminal open ring geometry based on a Ga[Al]As heterostructure. Two quantum dots are embedded in the structure, one in each of the two interfering paths. The number of electrons in the two dots can be controlled independently. The transmission phase is measured as electrons are added to or taken away from the individual quantum dots. Although the measured phase shifts are in qualitative agreement with theoretical predictions, the phase evolution exhibits unexpected dependence on the magnetic field. For example, phase lapses are found only in certain ranges of magnetic field. △ Less

Submitted 12 August, 2003; originally announced August 2003.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 93 (6) 66802 (2004)

Transmission Phase Through Two Quantum Dots Embedded in a Four-Terminal Quantum Ring

Authors: M. Sigrist, A. Fuhrer, T. Ihn, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: We use the Aharonov-Bohm effect in a four-terminal ring based on a Ga[Al]As heterostructure for the measurement of the relative transmission phase. In each of the two interfering paths we induce a quantum dot. The number of electrons in the two dots can be controlled independently. The transmission phase is measured as electrons are added to or taken away from the individual quantum dots. We use the Aharonov-Bohm effect in a four-terminal ring based on a Ga[Al]As heterostructure for the measurement of the relative transmission phase. In each of the two interfering paths we induce a quantum dot. The number of electrons in the two dots can be controlled independently. The transmission phase is measured as electrons are added to or taken away from the individual quantum dots. △ Less

Submitted 12 August, 2003; v1 submitted 11 July, 2003; originally announced July 2003.

Comments: 3 pages, 4 figures

Journal ref: Physica E 22, 530, (2003)

Singlet-Triplet Transition Tuned by Asymmetric Gate Voltages in a Quantum Ring

Authors: A. Fuhrer, T. Ihn, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: Wavefunction and interaction effects in the addition spectrum of a Coulomb blockaded many electron quantum ring are investigated as a function of asymmetrically applied gate voltages and magnetic field. Hartree and exchange contributions to the interaction are quantitatively evaluated at a crossing between states extended around the ring and states which are more localized in one arm of the ring… ▽ More Wavefunction and interaction effects in the addition spectrum of a Coulomb blockaded many electron quantum ring are investigated as a function of asymmetrically applied gate voltages and magnetic field. Hartree and exchange contributions to the interaction are quantitatively evaluated at a crossing between states extended around the ring and states which are more localized in one arm of the ring. A gate tunable singlet-triplet transition of the two uppermost levels of this many electron ring is identified at zero magnetic field. △ Less

Submitted 26 June, 2003; originally announced June 2003.

Comments: 4 pages

Journal ref: Phys. Rev. Lett. 91 (20) 206802 (2003)

Energy spectra of quantum rings

Authors: A. Fuhrer, S. Luescher, T. Ihn, T. Heinzel, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: Ring geometries have fascinated experimental and theoretical physicists over many years. Open rings connected to leads allow the observation of the Aharonov-Bohm effect, a paradigm of quantum mechanical phase coherence. The phase coherence of transport through a quantum dot embedded in one arm of an open ring has been demonstrated. The energy spectrum of closed rings has only recently been analy… ▽ More Ring geometries have fascinated experimental and theoretical physicists over many years. Open rings connected to leads allow the observation of the Aharonov-Bohm effect, a paradigm of quantum mechanical phase coherence. The phase coherence of transport through a quantum dot embedded in one arm of an open ring has been demonstrated. The energy spectrum of closed rings has only recently been analysed by optical experiments and is the basis for the prediction of persistent currents and related experiments. Here we report magnetotransport experiments on a ring-shaped semiconductor quantum dot in the Coulomb blockade regime. The measurements allow us to extract the discrete energy levels of a realistic ring, which are found to agree well with theoretical expectations. Such an agreement, so far only found for few-electron quantum dots, is here extended to a many-electron system. In a semiclassical language our results indicate that electron motion is governed by regular rather than chaotic motion, an unexplored regime in many-electron quantum dots. △ Less

Submitted 6 September, 2001; originally announced September 2001.

Comments: 10 pages, 4 figures

Journal ref: Nature 413, 822 (2001)

Electronic properties of antidot lattices fabricated by atomic force lithography

Authors: A. Dorn, A. Fuhrer, T. Ihn, T. Heinzel, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: Antidot lattices were fabricated by atomic force lithography using local oxidation. High quality finite 20 x20 lattices are demonstrated with periods of 300 nm. The low temperature magnetoresistance shows well developed commensurability oscillations as well as a quenching of the Hall effect around zero magnetic field. In addition, we find B periodic oscillations superimposed on the classical com… ▽ More Antidot lattices were fabricated by atomic force lithography using local oxidation. High quality finite 20 x20 lattices are demonstrated with periods of 300 nm. The low temperature magnetoresistance shows well developed commensurability oscillations as well as a quenching of the Hall effect around zero magnetic field. In addition, we find B periodic oscillations superimposed on the classical commensurability peaks at temperatures as high as 1.7 K. These observations indicate the high electronic quality of our samples. △ Less

Submitted 30 August, 2001; originally announced August 2001.

Comments: Appl. Phys. Lett., in print

Journal ref: Appl. Phys. Lett. 80, 252 (2002)

Transport properties of quantum dots with hard walls

Authors: A. Fuhrer, S. Luescher, T. Heinzel, K. Ensslin, W. Wegscheider, M. Bichler

Abstract: Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots' energy spectrum is reconstructed. W… ▽ More Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots' energy spectrum is reconstructed. We find that in small dots, the addition spectrum can qualitatively be described within a Fock-Darwin model. For a quantitative analysis, however, a hard-wall confinement has to be considered. In large dots, the energy level spectrum deviates even qualitatively from a Fock-Darwin model. The maximum wall steepness achieved is of the order of 0.4 meV/nm. △ Less

Submitted 22 September, 2000; originally announced September 2000.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 63, 125309 (2001)

In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography

Authors: S. Luescher, A. Fuhrer, R. Held, T. Heinzel, K. Ensslin, W. Wegscheider

Abstract: A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional,… ▽ More A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes, and the contacts of the dot to source and drain. Both the number of electrons in the dot as well as its coupling to the leads can be tuned with an additional, homogeneous top gate electrode. Pronounced Coulomb blockade oscillations are observed as a function of voltages applied to different gates. We find that, for positive top-gate voltages, the lithographic pattern is transferred with high accuracy to the electron gas. Furthermore, the dot shape does not change significantly when in-plane voltages are tuned. △ Less

Submitted 23 September, 1999; originally announced September 1999.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 75, 2452 (1999)