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A Unified Evaluation Framework for Spiking Neural Network Hardware Accelerators Based on Emerging Non-Volatile Memory Devices
Authors:
Debasis Das,
Xuanyao Fong
Abstract:
Spiking Neural Networks (SNNs) have emerged as a promising paradigm, offering event-driven and energy-efficient computation. In recent studies, various devices tailored for SNN synapses and neurons have been proposed, leveraging the unique characteristics of emerging non-volatile memory (eNVM) technologies. While substantial progress has been made in exploring the capabilities of SNNs and designin…
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Spiking Neural Networks (SNNs) have emerged as a promising paradigm, offering event-driven and energy-efficient computation. In recent studies, various devices tailored for SNN synapses and neurons have been proposed, leveraging the unique characteristics of emerging non-volatile memory (eNVM) technologies. While substantial progress has been made in exploring the capabilities of SNNs and designing dedicated hardware components, there exists a critical gap in establishing a unified approach for evaluating hardware-level metrics. Specifically, metrics such as latency, and energy consumption, are pivotal in assessing the practical viability and efficiency of the constructed neural network. In this article, we address this gap by presenting a comprehensive framework for evaluating hardware-level metrics in SNNs based on non-volatile memory devices. We systematically analyze the impact of synaptic and neuronal components on energy consumption providing a unified perspective for assessing the overall efficiency of the network. In this study, our emphasis lies on the neuron and synaptic device based on magnetic skyrmions. Nevertheless, our framework is versatile enough to encompass other emerging devices as well. Utilizing our proposed skyrmionic devices, the constructed SNN demonstrates an inference accuracy of approximately 98% and achieves energy consumption on the order of pJ when processing the Modified National Institute of Standards and Technology (MNIST) handwritten digit dataset.
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Submitted 29 February, 2024;
originally announced February 2024.
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Energy-efficient superparamagnetic Ising machine and its application to traveling salesman problems
Authors:
Jia Si,
Shuhan Yang,
Yunuo Cen,
Jiaer Chen,
Zhaoyang Yao,
Dong-Jun Kim,
Kaiming Cai,
Jerald Yoo,
Xuanyao Fong,
Hyunsoo Yang
Abstract:
The growth of artificial intelligence and IoT has created a significant computational load for solving non-deterministic polynomial-time (NP)-hard problems, which are difficult to solve using conventional computers. The Ising computer, based on the Ising model and annealing process, has been highly sought for finding approximate solutions to NP-hard problems by observing the convergence of dynamic…
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The growth of artificial intelligence and IoT has created a significant computational load for solving non-deterministic polynomial-time (NP)-hard problems, which are difficult to solve using conventional computers. The Ising computer, based on the Ising model and annealing process, has been highly sought for finding approximate solutions to NP-hard problems by observing the convergence of dynamic spin states. However, it faces several challenges, including high power consumption due to artificial spins and randomness emulated by complex circuits, as well as low scalability caused by the rapidly growing connectivity when considering large-scale problems. Here, we present an experimental Ising annealing computer based on superparamagnetic tunnel junctions (SMTJs) with all-to-all connections, which successfully solves a 70-city travelling salesman problem (4761-node Ising problem). By taking advantage of the intrinsic randomness of SMTJs, implementing a proper global annealing scheme, and using an efficient algorithm, our SMTJ-based Ising annealer shows superior performance in terms of power consumption and energy efficiency compared to other Ising schemes. Additionally, our approach provides a promising way to solve complex problems with limited hardware resources. Moreover, we propose a crossbar array architecture for scalable integration using conventional magnetic random access memories. Our results demonstrate that the SMTJ-based Ising annealing computer with high energy efficiency, speed, and scalability is a strong candidate for future unconventional computing schemes.
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Submitted 20 June, 2023;
originally announced June 2023.
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Anomalous and Topological Hall Resistivity in Ta/CoFeB/MgO Magnetic Systems for Neuromorphic Computing Applications
Authors:
Aijaz H. Lone,
Xuecui Zou,
Debasis Das,
Xuanyao Fong,
Gianluca Setti,
Hossein Fariborzi
Abstract:
Topologically protected spin textures, such as magnetic skyrmions, have the potential for dense data storage as well as energy-efficient computing due to their small size and a low driving current. The evaluation of the writing and reading of the skyrmion's magnetic and electrical characteristics is a key step toward the implementation of these devices. In this paper, we present the magnetic heter…
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Topologically protected spin textures, such as magnetic skyrmions, have the potential for dense data storage as well as energy-efficient computing due to their small size and a low driving current. The evaluation of the writing and reading of the skyrmion's magnetic and electrical characteristics is a key step toward the implementation of these devices. In this paper, we present the magnetic heterostructure Hall bar device and study the anomalous Hall and topological Hall signals in the device. Using the combination of different measurements like magnetometry at different temperatures, Hall effect measurement from 2K to 300K, and magnetic force microscopy imaging, we investigate the magnetic and electrical characteristics of the magnetic structure. We measure the skyrmion topological resistivity at different temperatures as a function of the magnetic field. The topological resistivity is maximum around the zero magnetic field and it decreases to zero at the saturating field. This is further supported by MFM imaging. Interestingly the resistivity decreases linearly with the field, matching the behavior observed in the corresponding micromagnetic simulations. We combine the experimental results with micromagnetic simulations, thus propose a skyrmion-based synaptic device and show spin-orbit torque-controlled potentiation/depression in the device. The device performance as the synapse for neuromorphic computing is further evaluated in a convolutional neural network CNN. The neural network is trained and tested on the MNIST data set we show devices acting as synapses achieving a recognition accuracy close to 90%, on par with the ideal software-based weights which offer an accuracy of 92%.
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Submitted 16 April, 2023;
originally announced April 2023.
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Efficient domain wall motion driven by the out-of-plane spin polarization
Authors:
Jingwei Long,
Yumeng Yang,
Shuyuan Shi,
Xuanyao Fong,
Gengchiau Liang,
Zhifeng Zhu
Abstract:
Fast domain wall motion in systems with perpendicular magnetization is necessary for many novel applications such as the racetrack memory, domain wall logic devices and artificial synapses. The domain wall speed has been greatly improved after the demonstration of current driven domain wall motion using the spin transfer torque, and later achieved another leap due to the combined effect of spin-Ha…
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Fast domain wall motion in systems with perpendicular magnetization is necessary for many novel applications such as the racetrack memory, domain wall logic devices and artificial synapses. The domain wall speed has been greatly improved after the demonstration of current driven domain wall motion using the spin transfer torque, and later achieved another leap due to the combined effect of spin-Hall effect and Dzyaloshinskii-Moriya interaction (DMI). However, only Neel wall can be effectively driven in the latter system. In this paper, we show that both Bloch and Neel domain walls can be effectively moved by exploiting the field-like torque with the out-of-plane spin polarization, which can be generated in materials with reduced symmetry. In addition, we find that the Neel wall and Bloch walls stabilized by the magnetostatic energy are easily distorted by the spin-orbit torque and they then enter the Walker breakdown region. External magnetic field and DMI are introduced to stabilize the domain wall, and a very high domain wall velocity over 500 m/s is obtained at a moderate current density of $2\times 10^{11} A/m^2$. In principle, this mechanism can be used to drive any types of domain walls. This work thus provides new degrees of freedom in the control of domain wall motion.
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Submitted 15 March, 2023;
originally announced March 2023.
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Electrical Tunable Spintronic Neuron with Trainable Activation Function
Authors:
Yue Xin,
Kang Zhou,
Xuanyao Fong,
Yumeng Yang,
Shenghua Gao,
Zhifeng Zhu
Abstract:
Spintronic devices have been widely studied for the hardware realization of artificial neurons. The stochastic switching of magnetic tunnel junction driven by the spin torque is commonly used to produce the sigmoid activation function. However, the shape of the activation function in previous studies is fixed during the training of neural network. This restricts the updating of weights and results…
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Spintronic devices have been widely studied for the hardware realization of artificial neurons. The stochastic switching of magnetic tunnel junction driven by the spin torque is commonly used to produce the sigmoid activation function. However, the shape of the activation function in previous studies is fixed during the training of neural network. This restricts the updating of weights and results in a limited performance. In this work, we exploit the physics behind the spin torque induced magnetization switching to enable the dynamic change of the activation function during the training process. Specifically, the pulse width and magnetic anisotropy can be electrically controlled to change the slope of activation function, which enables a faster or slower change of output required by the backpropagation algorithm. This is also similar to the idea of batch normalization that is widely used in the machine learning. Thus, this work demonstrates that the algorithms are no longer limited to the software implementation. They can in fact be realized by the spintronic hardware using a single device. Finally, we show that the accuracy of hand-written digit recognition can be improved from 88% to 91.3% by using these trainable spintronic neurons without introducing additional energy consumption. Our proposals can stimulate the hardware realization of spintronic neural networks.
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Submitted 23 November, 2022;
originally announced November 2022.
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Design of Spintronics-based Neuronal and Synaptic Devices for Spiking Neural Network Circuits
Authors:
Debasis Das,
Yunuo Cen,
Jianze Wang,
Xuanyao Fong
Abstract:
Topologically stable magnetic skyrmion has a much lower depinning current density that may be useful for memory as well as neuromorphic computing. However, skyrmion-based devices suffer from the Magnus force originating from the skyrmion Hall effect, which may result in unwanted skyrmion annihilation if the magnitude of the driving current gets too large. A design of an artificial neuron and a syn…
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Topologically stable magnetic skyrmion has a much lower depinning current density that may be useful for memory as well as neuromorphic computing. However, skyrmion-based devices suffer from the Magnus force originating from the skyrmion Hall effect, which may result in unwanted skyrmion annihilation if the magnitude of the driving current gets too large. A design of an artificial neuron and a synapse using a synthetic antiferromagnetically coupled bilayer device, which nullifies the Magnus force, is demonstrated in this work. The leak term in the artificial leaky integrate-and-fire neuron is achieved by engineering the uniaxial anisotropy profile of the neuronal device. The synaptic device has a similar structure as the neuronal device but has a constant uniaxial anisotropy. The synaptic device also has a linear and symmetric weight update, which is a highly desirable trait of an artificial synapse. Neuronal and synaptic devices based on magnetic domain-wall (DW) motion are also studied and compared to skyrmionic devices. Our simulation results show the energy required to perform such operation in DW or skyrmion-based devices is on the order of a few fJ.
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Submitted 12 November, 2022;
originally announced November 2022.
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Self-reset schemes for Magnetic domain wall-based neuron
Authors:
Debasis Das,
Xuanyao Fong
Abstract:
Spintronic artificial spiking neurons are promising due to their ability to closely mimic the leaky integrate-and-fire (LIF) dynamics of the biological LIF spiking neuron. However, the neuron needs to be reset after firing. Few of the spintronic neurons that have been proposed in the literature discuss the reset process in detail. In this article, we discuss the various schemes to achieve this res…
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Spintronic artificial spiking neurons are promising due to their ability to closely mimic the leaky integrate-and-fire (LIF) dynamics of the biological LIF spiking neuron. However, the neuron needs to be reset after firing. Few of the spintronic neurons that have been proposed in the literature discuss the reset process in detail. In this article, we discuss the various schemes to achieve this reset in a magnetic domain wall (DW) based spintronic neuron in which the position of the DW represents the membrane potential. In all the spintronic neurons studied, the neuron enters a refractory period and is reset when the DW reaches a particular position. We show that the self-reset operation in the neuron devices consumes energy that can vary from of several pJ to a few fJ, which highlights the importance of the reset strategy in improving the energy efficiency of spintronic artificial spiking neurons.
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Submitted 2 December, 2022; v1 submitted 25 October, 2022;
originally announced October 2022.
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Bilayer-skyrmion-based design of neuron and synapse for spiking neural network
Authors:
Debasis Das,
Yunuo Cen,
Jianze Wang,
Xuanyao Fong
Abstract:
Magnetic skyrmion technology is promising for the next-generation spintronics-based memory and neuromorphic computing due to their small size, non-volatility and low depinning current density. However, the Magnus force originating from the skyrmion Hall effect causes the skyrmion to move along a curved trajectory, which may lead to the annihilation of the skyrmion in a nanotrack during current-ind…
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Magnetic skyrmion technology is promising for the next-generation spintronics-based memory and neuromorphic computing due to their small size, non-volatility and low depinning current density. However, the Magnus force originating from the skyrmion Hall effect causes the skyrmion to move along a curved trajectory, which may lead to the annihilation of the skyrmion in a nanotrack during current-induced skyrmion motion. Consequently, circuits utilizing skyrmionic motion need to be designed to limit the impact of the skyrmion Hall effect. In this work, we propose a design of an artificial neuron, and a synapse using the bilayer device consisting of two antiferromagnetically exchange coupled ferromagnetic layers, which achieves robustness against the skyrmion Hall effect by nullifying the Magnus force. Using micromagnetic simulations, we show that the bilayer device can work as an artificial neuron and also as a synapse by modifying its uniaxial anisotropy. We also demonstrate that our proposed skyrmionic synapse has an intrinsic property of perfectly linear and symmetric weight update, which is highly desirable for the synapse operation. A spiking neural network implemented using our proposed synapse and neuron was simulated and showed to achieve 96.23\% accuracy in performing classification on the MNIST handwritten digit dataset.
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Submitted 2 February, 2023; v1 submitted 4 March, 2022;
originally announced March 2022.
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A Fokker-Planck Approach for Modeling the Stochastic Phenomena in Magnetic and Resistive Random Access Memory Devices
Authors:
Debasis Das,
Xuanyao Fong
Abstract:
Embedded non-volatile memory technologies such as resistive random access memory (RRAM) and spin-transfer torque magnetic RAM (STT MRAM) are increasingly being researched for application in neuromorphic computing and hardware accelerators for AI. However, the stochastic write processes in these memory technologies affect their yield and need to be studied alongside process variations, which drasti…
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Embedded non-volatile memory technologies such as resistive random access memory (RRAM) and spin-transfer torque magnetic RAM (STT MRAM) are increasingly being researched for application in neuromorphic computing and hardware accelerators for AI. However, the stochastic write processes in these memory technologies affect their yield and need to be studied alongside process variations, which drastically increase the complexity of yield analysis using the Monte Carlo approach. Therefore, we propose an approach based on the Fokker-Planck equation for modeling the stochastic write processes in STT MRAM and RRAM devices. Moreover, we show that our proposed approach can reproduce the experimental results for both STT-MRAM and RRAM devices.
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Submitted 23 October, 2021; v1 submitted 8 May, 2021;
originally announced May 2021.
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Electrical generation and detection of terahertz signal based on spin-wave emission from ferrimagnets
Authors:
Zhifeng Zhu,
Kaiming Cai,
Jiefang Deng,
Venkata Pavan Kumar Miriyala,
Hyunsoo Yang,
Xuanyao Fong,
Gengchiau Liang
Abstract:
Terahertz (THz) signals, mainly generated by photonic or electronic approaches, are being sought for various applications, whereas the development of magnetic source might be a necessary step to harness the magnetic nature of electromagnetic radiation. We show that the relativistic effect on the current-driven domain-wall motion induces THz spin-wave emission in ferrimagnets. The required current…
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Terahertz (THz) signals, mainly generated by photonic or electronic approaches, are being sought for various applications, whereas the development of magnetic source might be a necessary step to harness the magnetic nature of electromagnetic radiation. We show that the relativistic effect on the current-driven domain-wall motion induces THz spin-wave emission in ferrimagnets. The required current density increases dramatically in materials with strong exchange interaction and rapidly exceeds 1012 A m-2, leading to the device breakdown and thus the lack of experimental evidence. By translating the collective magnetization oscillations into voltage signals, we propose a three-terminal device for the electrical detection of THz spin wave. Through material engineering, wide frequency range from 264 GHz to 1.1 THz and uniform continuous signals with improved output power can be obtained. As a reverse effect, the spin wave generated in this system is able to move ferrimagnetic domain wall. Our work provides guidelines for the experimental verification of THz spin wave, and could stimulate the design of THz spintronic oscillators for wideband applications as well as the all-magnon spintronic devices.
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Submitted 17 March, 2020;
originally announced March 2020.
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SIMBA: A Skyrmionic In-Memory Binary Neural Network Accelerator
Authors:
Venkata Pavan Kumar Miriyala,
Kale Rahul Vishwanath,
Xuanyao Fong
Abstract:
Magnetic skyrmions are emerging as potential candidates for next generation non-volatile memories. In this paper, we propose an in-memory binary neural network (BNN) accelerator based on the non-volatile skyrmionic memory, which we call as SIMBA. SIMBA consumes 26.7 mJ of energy and 2.7 ms of latency when running an inference on a VGG-like BNN. Furthermore, we demonstrate improvements in the perfo…
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Magnetic skyrmions are emerging as potential candidates for next generation non-volatile memories. In this paper, we propose an in-memory binary neural network (BNN) accelerator based on the non-volatile skyrmionic memory, which we call as SIMBA. SIMBA consumes 26.7 mJ of energy and 2.7 ms of latency when running an inference on a VGG-like BNN. Furthermore, we demonstrate improvements in the performance of SIMBA by optimizing material parameters such as saturation magnetization, anisotropic energy and damping ratio. Finally, we show that the inference accuracy of BNNs is robust against the possible stochastic behavior of SIMBA (88.5% +/- 1%).
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Submitted 11 March, 2020;
originally announced March 2020.
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Spin-wave mediated interactions for Majority Computation using Skyrmions and Spin-torque Nano-oscillators
Authors:
Venkata Pavan Kumar Miriyala,
Zhifeng Zhu,
Gengchiau Liang,
Xuanyao Fong
Abstract:
Recent progress in all-electrical nucleation, detection and manipulation of magnetic skyrmions has unlocked the tremendous potential of skyrmion-based spintronic devices. Here, we show via micromagnetic simulations that the stable magnetic oscillations of STNO radiate spin waves (SWs) that can be scattered in the presence of skyrmions in the near vicinity. Interference between SWs emitted by the S…
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Recent progress in all-electrical nucleation, detection and manipulation of magnetic skyrmions has unlocked the tremendous potential of skyrmion-based spintronic devices. Here, we show via micromagnetic simulations that the stable magnetic oscillations of STNO radiate spin waves (SWs) that can be scattered in the presence of skyrmions in the near vicinity. Interference between SWs emitted by the STNO and SWs scattered by the skyrmion gives rise to interesting dynamics that leads to amplification or attenuation of STNO's magnetic oscillations. In the presence of strong Dzyaloshinskii-Moriya interaction (DMI), the amplified magnetic oscillations evolve into a new skyrmion. These interactions between skyrmions and STNOs are found to be identical for both Neel-type and Bloch-type skyrmions, and are not observed between domain walls and STNOs. These findings offer a novel perspective in processing information using single skyrmions and we propose a 3-bit majority gate for logic applications.
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Submitted 20 May, 2019; v1 submitted 19 February, 2019;
originally announced February 2019.
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Spin-torque-induced magnetization dynamics in ferrimagnets based on Landau-Lifshitz-Bloch Equation
Authors:
Zhifeng Zhu,
Xuanyao Fong,
Gengchiau Liang
Abstract:
A theoretical model based on the Landau-Lifshitz-Bloch equation is developed to study the spin-torque effect in ferrimagnets. Experimental findings, such as the temperature dependence, the peak in spin torque, and the angular-momentum compensation, can be well captured. In contrast to the ferromagnet system, the switching trajectory in ferrimagnets is found to be precession free. The two sublattic…
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A theoretical model based on the Landau-Lifshitz-Bloch equation is developed to study the spin-torque effect in ferrimagnets. Experimental findings, such as the temperature dependence, the peak in spin torque, and the angular-momentum compensation, can be well captured. In contrast to the ferromagnet system, the switching trajectory in ferrimagnets is found to be precession free. The two sublattices are not always collinear, which produces large exchange field affecting the magnetization dynamics. The study of material composition shows the existence of an oscillation region at intermediate current density, induced by the nondeterministic switching. Compared to the Landau-Lifshitz-Gilbert model, our developed model based on the Landau-Lifshitz-Bloch equation enables the systematic study of spin-torque effect and the evaluation of ferrimagnet-based devices.
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Submitted 6 July, 2018;
originally announced July 2018.
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Electric-field-induced Three-terminal pMTJ Switching in the absence of an External Magnetic Field
Authors:
Jiefang Deng,
Xuanyao Fong,
Gengchiau Liang
Abstract:
Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal perpendicular magnetic tunnel junction (pMTJ). By conducting macro-spin simulation, we show that a pMTJ with thermal stability of 61 can be switched in 0.5 ns…
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Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the electric-field-induced switching operation of a three terminal perpendicular magnetic tunnel junction (pMTJ). By conducting macro-spin simulation, we show that a pMTJ with thermal stability of 61 can be switched in 0.5 ns consuming a switching energy of 6 fJ, and the voltage operation margin can be improved to 0.8 ns. Furthermore, the results also demonstrate that a heavy metal system that can provide large field-like torque rather than damping-like torque is favored for the switching.
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Submitted 7 May, 2018;
originally announced May 2018.
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Theoretical Proposal for Determining Angular Momentum Compensation in Ferrimagnets
Authors:
Zhifeng Zhu,
Xuanyao Fong,
Gengchiau Liang
Abstract:
This work demonstrates that the magnetization and angular momentum compensation temperature (TMC and TAMC) in ferrimagnets (FiM) can be unambiguously determined by performing two sets of temperature dependent current switching, with the symmetry reverses at TMC and TAMC, respectively. A theoretical model based on the modified Landau-Lifshitz-Bloch equation is developed to systematically study the…
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This work demonstrates that the magnetization and angular momentum compensation temperature (TMC and TAMC) in ferrimagnets (FiM) can be unambiguously determined by performing two sets of temperature dependent current switching, with the symmetry reverses at TMC and TAMC, respectively. A theoretical model based on the modified Landau-Lifshitz-Bloch equation is developed to systematically study the spin torque effect under different temperatures, and numerical simulations are performed to corroborate our proposal. Furthermore, we demonstrate that the recently reported linear relation between TAMC and TMC can be explained using the Curie-Weiss theory.
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Submitted 13 December, 2017;
originally announced December 2017.
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Modeling and Simulation of Spin Transfer Torque Generated at Topological Insulator/Ferromagnetic Heterostructure
Authors:
Ahmed K. Reza,
Xuanyao Fong,
Zubair Al Azim,
Kaushik Roy
Abstract:
Topological Insulator (TI) has recently emerged as an attractive candidate for possible application to spintronic circuits because of its strong spin orbit coupling. TIs are unique materials that have an insulating bulk but conducting surface states due to band inversion and these surface states are protected by time reversal symmetry. In this paper, we propose a physics-based spin dynamics simula…
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Topological Insulator (TI) has recently emerged as an attractive candidate for possible application to spintronic circuits because of its strong spin orbit coupling. TIs are unique materials that have an insulating bulk but conducting surface states due to band inversion and these surface states are protected by time reversal symmetry. In this paper, we propose a physics-based spin dynamics simulation framework for TI/Ferromagnet (TI/FM) bilayer heterostructures that is able to capture the electronic band structure of a TI while calculating the electron and spin transport properties. Our model differs from TI/FM models proposed in the literature in that it is able to account for the 3D band structure of TIs and the effect of exchange coupling and external magnetic field on the band structure. Our proposed approach uses 2D surface Hamiltonian for TIs that includes all necessary features for spin transport calculations so as to properly model the characteristics of a TI/FM heterostructure. Using this Hamiltonian and appropriate parameters, we show that the effect of quantum confinement and exchange coupling are successfully captured in the calculated surface band structure compared with the quantum well band diagram of a 3D TI, and matches well with experimental data reported in the literature. We then show how this calibrated Hamiltonian is used with the self-consistent non equilibrium Green's functions (NEGF) formalism to determine the charge and spin transport in TI/FM bilayer heterostructures. Our calculations agree well with experimental data and capture the unique features of a TI/FM heterostructure such as high spin Hall angle, high spin conductivity etc. Finally, we show how the results obtained from NEGF calculations may be incorporated into the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) formulation to simulate the magnetization dynamics of an FM layer sitting on top of a TI.
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Submitted 29 July, 2015; v1 submitted 25 June, 2015;
originally announced June 2015.
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Laser Induced Magnetization Reversal for Detection in Optical Interconnects
Authors:
Zubair Al Azim,
Xuanyao Fong,
Thomas Ostler,
Roy Chantrell,
Kaushik Roy
Abstract:
Optical interconnect has emerged as the front-runner to replace electrical interconnect especially for off-chip communication. However, a major drawback with optical interconnects is the need for photodetectors and amplifiers at the receiver, implemented usually by direct bandgap semiconductors and analog CMOS circuits, leading to large energy consumption and slow operating time. In this article,…
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Optical interconnect has emerged as the front-runner to replace electrical interconnect especially for off-chip communication. However, a major drawback with optical interconnects is the need for photodetectors and amplifiers at the receiver, implemented usually by direct bandgap semiconductors and analog CMOS circuits, leading to large energy consumption and slow operating time. In this article, we propose a new optical interconnect architecture that uses a magnetic tunnel junction (MTJ) at the receiver side that is switched by femtosecond laser pulses. The state of the MTJ can be sensed using simple digital CMOS latches, resulting in significant improvement in energy consumption. Moreover, magnetization in the MTJ can be switched on the picoseconds time-scale and our design can operate at a speed of 5 Gbits/sec for a single link.
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Submitted 9 October, 2014;
originally announced October 2014.
