Showing 1–50 of 257 results for author: Fal'ko, V

Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene

Authors: Alex Boschi, Zewdu M. Gebeyehu, Sergey Slizovskiy, Vaidotas Mišeikis, Stiven Forti, Antonio Rossi, Kenji Watanabe, Takashi Taniguchi, Fabio Beltram, Vladimir I. Fal'ko, Camilla Coletti, Sergio Pezzini

Abstract: Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric t… ▽ More Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric twistronic stack comprising both MLG and BLG, synthesized via low-pressure chemical vapor deposition (LP-CVD) on Cu. Although a large ($\sim30^{\circ}$) twist angle decouples the MLG and BLG electronic bands near Fermi level, we find that the layer degeneracy in the BLG subsystem is lifted, producing a gap in the absence of external fields. The built-in interlayer asymmetry originates from proximity-induced energy shifts in the outermost layers and requires a displacement field of $0.14$ V/nm to be compensated. The latter corresponds to a $\sim10$ meV intrinsic BLG gap, a value confirmed by our thermal-activation measurements. The present results highlight the role of structural asymmetry and encapsulating environment, expanding the engineering toolbox for monolithically-grown graphene multilayers. △ Less

Submitted 7 June, 2024; originally announced June 2024.

Comments: 23 pages, 4 figures and supporting information

Two-dimensional electrons at mirror and twistronic twin boundaries in van der Waals ferroelectrics

Authors: James G. McHugh, Xue Li, Isaac Soltero, Vladimir I. Fal'ko

Abstract: Semiconducting transition metal dichalcogenides (MX$_2$) occur in 2H and rhombohedral (3R) polytypes, respectively distinguished by anti-parallel and parallel orientation of consecutive monolayer lattices. In its bulk form, 3R-MX$_2$ is ferroelectric, hosting an out-of-plane electric polarisation, the direction of which is dictated by stacking. Here, we predict that twin boundaries, separating adj… ▽ More Semiconducting transition metal dichalcogenides (MX$_2$) occur in 2H and rhombohedral (3R) polytypes, respectively distinguished by anti-parallel and parallel orientation of consecutive monolayer lattices. In its bulk form, 3R-MX$_2$ is ferroelectric, hosting an out-of-plane electric polarisation, the direction of which is dictated by stacking. Here, we predict that twin boundaries, separating adjacent polarization domains with reversed built-in electric fields, are able to host two-dimensional electrons and holes with an areal density reaching $\sim 10^{13} {\rm cm}^{-2}$. Our modelling suggests that n-doped twin boundaries have a more promising binding energy than p-doped ones, whereas hole accumulation is stable at external surfaces of a twinned film. We also propose that assembling pairs of mono-twin films with a `magic' twist angle $θ^*$ that provides commensurability between the moiré pattern at the interface and the accumulated carrier density, should promote a regime of strongly correlated states of electrons, such as Wigner crystals, and we specify the values of $θ^*$ for homo- and heterostructures of various TMDs. △ Less

Submitted 26 July, 2024; v1 submitted 23 May, 2024; originally announced May 2024.

Comments: 12 pages, 8 Figures

Correlated Electron Effects in Chromium Trihalide Hetostructures with Graphene: A Tight-Binding Model Perspective

Authors: Igor Rozhansky, Vladimir Fal'ko

Abstract: In this study, we present an effective tight-binding model for an accurate description of the lowest energy quadruplet of conduction band in a ferromagnetic CrX$_3$ monolayer, tuned to the complementary \textit{ab initio} density functional theory simulations. This model, based on a minimum number of chromium orbitals, captures a distinctively flat dispersion in those bands but requires taking int… ▽ More In this study, we present an effective tight-binding model for an accurate description of the lowest energy quadruplet of conduction band in a ferromagnetic CrX$_3$ monolayer, tuned to the complementary \textit{ab initio} density functional theory simulations. This model, based on a minimum number of chromium orbitals, captures a distinctively flat dispersion in those bands but requires taking into account hoppings beyond nearest neighbours, revealing ligand-mediated electron pathways connecting remote chromium sites. Doping of states in the lowest conduction band of CrX$_3$ requires charge transfer, which, according to recent studies, can occur in graphene(G)/CrX$_3$ heterostructures. Here, we use the detailed description of the lowest conduction band in CrI$_3$ to show that G/CrI$_3$/G and G/CrI$_3$ are type-II heterostructures where light holes in graphene would coexist with heavy electrons in the magnetic layer, where the latter can be characterised by Wigner parameter $r_s\sim 15-20$ (as estimated for hBN-encapsulated structures). △ Less

Submitted 29 April, 2024; originally announced April 2024.

Comments: 5 figures

Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistance

Authors: Mohsen Moazzami Gudarzi, Sergey Slizovskiy, Boyang Mao, Endre Tóvári, Gergo Pinter, David Sanderson, Maryana Asaad, Ying Xiang, Zhiyuan Wang, Jianqiang Guo, Ben F. Spencer, Alexandra A. Geim, Vladimir I. Fal'ko, Andrey V. Kretinin

Abstract: Understanding and controlling the electrical properties of solution-processed 2D materials is key to further printed electronics progress. Here we demonstrate that the thermolysis of the aromatic intercalants utilized in nanosheet exfoliation for graphene laminates opens the route to achieving high intrinsic mobility and simultaneously controlling doping type ($n$- and $p$-) and concentration over… ▽ More Understanding and controlling the electrical properties of solution-processed 2D materials is key to further printed electronics progress. Here we demonstrate that the thermolysis of the aromatic intercalants utilized in nanosheet exfoliation for graphene laminates opens the route to achieving high intrinsic mobility and simultaneously controlling doping type ($n$- and $p$-) and concentration over a wide range. We establish that the intra-flake mobility is high by observing a linear magnetoresistance of such solution-processed graphene laminates and using it to devolve the inter-flake tunneling and intra-layer magnetotransport. Consequently, we determine the temperature dependences of the inter- and intra-layer characteristics, which both appear to be dominated by phonon-assisted processes at temperature $T>$20 Kelvin. In particular, we identify the efficiency of phonon-assisted tunneling as the main limiting factor for electrical conductivity in graphene laminates at room temperature. We also demonstrate a thermoelectric sensitivity of around 50 $μ$V K$^{-1}$ in a solution-processed metal-free graphene-based thermocouple. △ Less

Submitted 26 April, 2024; originally announced April 2024.

Substrate, temperature and magnetic field dependence of electric polarisation in mixed-stacking tetralayer graphenes

Authors: Patrick Johansen Sarsfield, Aitor Garcia-Ruiz, Vladimir I. Fal'ko

Abstract: Polytypes of tetralayer graphene (TLG: Bernal, rhombohedral and mixed stacking) are crystalline structures with different symmetries. Among those, mixed-stacking tetralayers lack inversion symmetry, which allows for intrinsic spontaneous out-of-plane electrical polarisation, inverted in the mirror-image pair, ABCB and ABAC stackings. Here, we compare the intrinsic polarisation of such TLGs with th… ▽ More Polytypes of tetralayer graphene (TLG: Bernal, rhombohedral and mixed stacking) are crystalline structures with different symmetries. Among those, mixed-stacking tetralayers lack inversion symmetry, which allows for intrinsic spontaneous out-of-plane electrical polarisation, inverted in the mirror-image pair, ABCB and ABAC stackings. Here, we compare the intrinsic polarisation of such TLGs with the symmetry-breaking effect of a substrate, which can also generate out-of-plane electric dipole moments with different sizes in all four polytypes, including ABCB and ABAC twins. We analyse their temperature and magnetic field dependence, in view of understanding the origin of the recently measured Kelvin probe force microscopy maps of tetralayer flakes, and notice that the intrinsic contribution could be singled out based on magnetic field dependence of polarisation measured at low temperatures. △ Less

Submitted 17 June, 2024; v1 submitted 14 March, 2024; originally announced March 2024.

Comments: 11 pages, 6 figures

One-dimensional proximity superconductivity in the quantum Hall regime

Authors: Julien Barrier, Minsoo Kim, Roshan Krishna Kumar, Na Xin, P. Kumaravadivel, Lee Hague, E. Nguyen, A. I. Berdyugin, Christian Moulsdale, V. V. Enaldiev, J. R. Prance, F. H. L. Koppens, R. V. Gorbachev, K. Watanabe, T. Taniguchi, L. I. Glazman, I. V. Grigorieva, V. I. Fal'ko, A. K. Geim

Abstract: Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applicati… ▽ More Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applications. So far it has proven challenging to achieve detectable supercurrents through quantum Hall conductors. Here we show that domain walls in minimally twisted bilayer graphene support exceptionally robust proximity superconductivity in the quantum Hall regime, allowing Josephson junctions to operate in fields close to the upper critical field of superconducting electrodes. The critical current is found to be non-oscillatory and practically unchanging over the entire range of quantizing fields, with its value being limited by the quantum conductance of ballistic, strictly one-dimensional electronic channels residing within the domain walls. The system described is unique in its ability to support Andreev bound states at quantizing fields and offers many interesting directions for further exploration. △ Less

Submitted 25 April, 2024; v1 submitted 22 February, 2024; originally announced February 2024.

Comments: 24 pages, 14 figures

Journal ref: Nature 628, 741-745 (2024)

Competition of moiré network sites to form electronic quantum dots in reconstructed MoX${}_2$/WX${}_2$ heterostructures

Authors: Isaac Soltero, Mikhail A. Kaliteevski, James G. McHugh, Vladimir V. Enaldiev, Vladimir I. Fal'ko

Abstract: Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moiré superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining t… ▽ More Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moiré superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining the electron/hole localization across moiré superlattices. Here, we present a catalogue of options for the formation of self-organized quantum dots and wires in lattice-reconstructed marginally twisted MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ bilayers, fine tuned by the twist angle between the monolayers from perfect alignment to $θ\sim 1^{\circ}$, and by choosing parallel or anti-parallel orientation of their unit cells. The proposed scenarios of the quantum dots and wires formation are found using multi-scale modelling that takes into account the features of strain textures caused by twirling of domain wall networks. △ Less

Submitted 29 November, 2023; originally announced November 2023.

Comments: 7 pages, 5 figures

High-mobility compensated semimetals, orbital magnetization, and umklapp scattering in bilayer graphene moire superlattices

Authors: A. L. Shilov, M. A. Kashchenko, P. A. Pantaleón, M. Kravtsov, A. Kudriashov, Z. Zhan, T. Taniguchi, K. Watanabe, S. Slizovskiy, K. S. Novoselov, V. I. Fal'ko, F. Guinea, D. A. Bandurin

Abstract: Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the u… ▽ More Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the understanding of the BLG/hBN MS electronic properties has, at present, remained fairly limited. Here we develop a multi-messenger approach that combines standard magnetotransport techniques with low-energy sub-THz excitation to get insights into the properties of this MS. We show that BLG/hBN lattice alignment results in the emergence of compensated semimetals at some integer fillings of the moire bands separated by van Hove singularities where Lifshitz transition occurs. A particularly pronounced semimetal develops when 8 electrons reside in the moire unit cell, where coexisting high-mobility electron and hole systems feature a strong magnetoresistance reaching 2350 % already at B=0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, pointing to an orbital magnetization characterized by a strongly enhanced effective g-factor of 340. Last, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multi-facet analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in vdW materials and provides a comprehension of the BLG/hBN MS. △ Less

Submitted 8 November, 2023; originally announced November 2023.

Comments: 9 pages, 4 figures

Journal ref: ACS Nano 2024

Resonant band hybridization in alloyed transition metal dichalcogenide heterobilayers

Authors: Alessandro Catanzaro, Armando Genco, Charalambos Louca, David A. Ruiz-Tijerina, Daniel J. Gillard, Luca Sortino, Aleksey Kozikov, Evgeny M. Alexeev, Riccardo Pisoni, Lee Hague, Kenji Watanabe, Takashi Taniguchi, Klauss Ensslin, Kostya S. Novoselov, Vladimir Fal'ko, Alexander I. Tartakovskii

Abstract: Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and M… ▽ More Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostructures built from atomically thin layers is largely unexplored. Here, we fabricate heterobilayers made from monolayers of WSe$_2$ (or MoSe$_2$) and Mo$_x$W$_{1-x}$Se$_2$ alloy and observe nontrivial tuning of the resultant bandstructure as a function of concentration $x$. We monitor this evolution by measuring the energy of photoluminescence (PL) of the interlayer exciton (IX) composed of an electron and hole residing in different monolayers. In Mo$_x$W$_{1-x}$Se$_2$/WSe$_2$, we observe a strong IX energy shift of $\approx$100 meV for $x$ varied from 1 to 0.6. However, for $x<0.6$ this shift saturates and the IX PL energy asymptotically approaches that of the indirect bandgap in bilayer WSe$_2$. We theoretically interpret this observation as the strong variation of the conduction band K valley for $x>0.6$, with IX PL arising from the K-K transition, while for $x<0.6$, the bandstructure hybridization becomes prevalent leading to the dominating momentum-indirect K-Q transition. This bandstructure hybridization is accompanied with strong modification of IX PL dynamics and nonlinear exciton properties. Our work provides foundation for bandstructure engineering in van der Waals heterostructures highlighting the importance of hybridization effects and opening a way to devices with accurately tailored electronic properties. △ Less

Submitted 23 September, 2023; originally announced September 2023.

Comments: Supporting Information can be found downloading and extracting the gzipped tar source file listed under "Other formats"

Non-chiral one-dimensional sates propagating inside AB/BA domain walls in bilayer graphene

Authors: V. V. Enaldiev, C. Moulsdale, A. K. Geim, V. I. Fal'ko

Abstract: Boundaries between structural twins of bilayer graphene (so-called AB/BA domain walls) are often discussed in terms of the formation of topologically protected valley-polarised chiral states. Here, we show that, depending on the width of the AB/BA boundary, the latter can also support non-chiral one-dimensional (1D) states that are confined to the domain wall at low energies and take the form of q… ▽ More Boundaries between structural twins of bilayer graphene (so-called AB/BA domain walls) are often discussed in terms of the formation of topologically protected valley-polarised chiral states. Here, we show that, depending on the width of the AB/BA boundary, the latter can also support non-chiral one-dimensional (1D) states that are confined to the domain wall at low energies and take the form of quasi-bound states at higher energies, where the 1D bands cross into the two-dimensional spectral continuum. We present the results of modeling of electronic properties of AB/BA domain walls with and without magnetic field as a function of their width and interlayer bias. △ Less

Submitted 26 July, 2023; originally announced July 2023.

A magnetically-induced Coulomb gap in graphene due to electron-electron interactions

Authors: E. E. Vdovin, M. T. Greenaway, Yu. N. Khanin, S. V. Morozov, O. Makarovsky, A. Patanè, A. Mishchenko, S. Slizovskiy, V. I. Fal'ko, A. K. Geim, K. S. Novoselov, L. Eaves

Abstract: Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its… ▽ More Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of $\sim$ 2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions. △ Less

Submitted 4 July, 2023; originally announced July 2023.

Journal ref: Communications Physics volume 6, Article number: 159 (2023)

Thermopower in hBN/graphene/hBN superlattices

Authors: Victor H. Guarochico-Moreira, Christopher R. Anderson, Vladimir Fal'ko, Irina V. Grigorieva, Endre Tóvári, Matthew Hamer, Roman Gorbachev, Song Liu, James H. Edgar, Alessandro Principi, Andrey V. Kretinin, Ivan J. Vera-Marun

Abstract: Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within heterostructures consisting of complete hBN encapsulation and 1D edge contacts, where the graphene and hBN lattices are aligned. When graphene is align… ▽ More Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within heterostructures consisting of complete hBN encapsulation and 1D edge contacts, where the graphene and hBN lattices are aligned. When graphene is aligned to one of the hBN layers, we demonstrate the presence of additional sign reversals in the thermopower as a function of carrier density, directly evidencing the presence of the moiré superlattice. We show that the temperature dependence of the thermopower enables the assessment of the role of built-in strain variation and van Hove singularities and hints at the presence of Umklapp electron-electron scattering processes. As the thermopower peaks around the neutrality point, this allows to probe the energy spectrum degeneracy. Further, when graphene is double-aligned with the top and bottom hBN crystals, the thermopower exhibits features evidencing multiple cloned Dirac points caused by the differential super-moiré lattice. For both cases we evaluate how well the thermopower agrees with Mott's equation. Finally, we show the same superlattice device can exhibit a temperature-driven thermopower reversal from positive to negative and vice versa, by controlling the carrier density. The study of thermopower provides an alternative approach to study the electronic structure of 2D superlattices, whilst offering opportunities to engineer the thermoelectric response on these heterostructures. △ Less

Submitted 14 June, 2023; originally announced June 2023.

Comments: 9 pages, 3 figures

Journal ref: Phys. Rev. B 108, 115418 (2023)

Twirling and spontaneous symmetry breaking of domain wall networks in lattice-reconstructed heterostructures of 2D materials

Authors: M. A. Kaliteevsky, V. V. Enaldiev, V. I. Fal'ko

Abstract: Lattice relaxation in twistronic bilayers with close lattice parameters and almost perfect crystallographic alignment of the layers results in the transformation of moiré pattern into a sequence of preferential stacking domains and domain wall networks. Here, we show that reconstructed moiré superlattices of the perfectly aligned heterobilayers of same-chalcogen transition metal dichalcogenides ha… ▽ More Lattice relaxation in twistronic bilayers with close lattice parameters and almost perfect crystallographic alignment of the layers results in the transformation of moiré pattern into a sequence of preferential stacking domains and domain wall networks. Here, we show that reconstructed moiré superlattices of the perfectly aligned heterobilayers of same-chalcogen transition metal dichalcogenides have broken-symmetry structures featuring twisted nodes ('twirls') of domain wall networks. Analysing twist-angle-dependences of strain characteristics for the broken-symmetry structures we show that the formation of twirl reduces amount of hydrostatic strain around the nodes, potentially, reducing their infuence on the band edge energies of electrons and holes. △ Less

Submitted 22 May, 2023; originally announced May 2023.

Journal ref: Nano Lett. 23, 8875 (2023)

Mixed-Stacking Few-Layer Graphene as an Elemental Weak Ferroelectric Material

Authors: Aitor Garcia-Ruiz, Vladimir Enaldiev, Andrew McEllistrim, Vladimir I. Fal'ko

Abstract: Ferroelectricity (Valasek, J. Phys. Rev. 1921, 17, 475) - a spontaneous formation of electric polarisation - is a solid state phenomenon, usually, associated with ionic compounds or complex materials. Here we show that, atypically for elemental solids, few-layer graphenes can host an equilibrium out-of-plane electric polarisation, switchable by sliding the constituent graphene sheets. The systems… ▽ More Ferroelectricity (Valasek, J. Phys. Rev. 1921, 17, 475) - a spontaneous formation of electric polarisation - is a solid state phenomenon, usually, associated with ionic compounds or complex materials. Here we show that, atypically for elemental solids, few-layer graphenes can host an equilibrium out-of-plane electric polarisation, switchable by sliding the constituent graphene sheets. The systems hosting such effect include mixed-stacking tetralayers and thicker (5-9 layers) rhombohedral graphitic films with a twin boundary in the middle of a flake. The predicted electric polarisation would also appear in marginally (small-angle) twisted few-layer flakes, where lattice reconstruction would give rise to networks of mesoscale domains with alternating value and sign of out-of-plane polarisation. △ Less

Submitted 18 May, 2023; originally announced May 2023.

Comments: 25 pages, 7 figures

Journal ref: Nano Lett. 2023, 23, 10

ARPES signatures of few-layer twistronic graphenes

Authors: J. E. Nunn, A. McEllistrim, A. Weston, A. Garcia-Ruiz, M. D. Watson, M. Mucha-Kruczynski, C. Cacho, R. Gorbachev, V. I. Fal'ko, N. R. Wilson

Abstract: Diverse emergent correlated electron phenomena have been observed in twisted graphene layers due to electronic interactions with the moiré superlattice potential. Many electronic structure predictions have been reported exploring this new field, but with few momentum-resolved electronic structure measurements to test them. Here we use angle-resolved photoemission spectroscopy (ARPES) to study the… ▽ More Diverse emergent correlated electron phenomena have been observed in twisted graphene layers due to electronic interactions with the moiré superlattice potential. Many electronic structure predictions have been reported exploring this new field, but with few momentum-resolved electronic structure measurements to test them. Here we use angle-resolved photoemission spectroscopy (ARPES) to study the twist-dependent ($1^\circ < θ< 8^\circ$) electronic band structure of few-layer graphenes, including twisted bilayer, monolayer-on-bilayer, and double-bilayer graphene (tDBG). Direct comparison is made between experiment and theory, using a hybrid $\textbf{k}\cdot\textbf{p}$ model for interlayer coupling and implementing photon-energy-dependent phase shifts for photo-electrons from consecutive layers to simulate ARPES spectra. Quantitative agreement between experiment and theory is found across twist angles, stacking geometries, and back-gate voltages, validating the models and revealing displacement field induced gap openings in twisted graphenes. However, for tDBG at $θ=1.5\pm0.2^\circ$, close to the predicted magic-angle of $θ=1.3^\circ$, a flat band is found near the Fermi-level with measured bandwidth of $E_w = 31\pm5$ meV. Analysis of the gap between the flat band and the next valence band shows significant deviations between experiment ($Δ_h=46\pm5$meV) and the theoretical model ($Δ_h=5$meV), indicative of the importance of lattice relaxation in this regime. △ Less

Submitted 4 April, 2023; originally announced April 2023.

Journal ref: Nano Letters 2023, 23, 11, 5201-5208

Kagomé quantum oscillations in graphene superlattices

Authors: Folkert K. de Vries, Sergey Slizovskiy, Petar Tomić, Roshan Krishna Kumar, Aitor Garcia-Ruiz, Giulia Zheng, Elías Portolés, Leonid A. Ponomarenko, Andre K. Geim, Kenji Watanabe, Takashi Taniguchi, Vladimir Fal'ko, Klaus Ensslin, Thomas Ihn, Peter Rickhaus

Abstract: Periodic systems feature the Hofstadter butterfly spectrum produced by Brown--Zak minibands of electrons formed when magnetic field flux through the lattice unit cell is commensurate with flux quantum and manifested by magneto-transport oscillations. Quantum oscillations, such as Shubnikov -- de Haas effect and Aharonov--Bohm effect, are also characteristic for electronic systems with closed orbit… ▽ More Periodic systems feature the Hofstadter butterfly spectrum produced by Brown--Zak minibands of electrons formed when magnetic field flux through the lattice unit cell is commensurate with flux quantum and manifested by magneto-transport oscillations. Quantum oscillations, such as Shubnikov -- de Haas effect and Aharonov--Bohm effect, are also characteristic for electronic systems with closed orbits in real space and reciprocal space. Here we show the intricate relation between these two phenomena by tracing quantum magneto-oscillations to Lifshitz transitions in graphene superlattices, where they persist even at relatively low fields and very much above liquid-helium temperatures. The oscillations originate from Aharonov--Bohm interference on cyclotron trajectories that form a kagomé-shaped network characteristic for Lifshitz transitions. In contrast to Shubnikov - de Haas oscillations, the kagomé oscillations are robust against thermal smearing and they can be detected even when the Hofstadter butterfly spectrum is undermined by electron's scattering. We expect that kagomé quantum oscillations are generic to rotationally-symmetric two-dimensional crystals close to Lifshitz transitions. △ Less

Submitted 30 March, 2023; v1 submitted 11 March, 2023; originally announced March 2023.

Comments: 7+7 pages

Journal ref: Nano Lett. 2024, 24, 2, 601

Moiré Superstructures in Marginally-Twisted NbSe$_2$ Bilayers

Authors: J. G. McHugh, V. V. Enaldiev, V. I. Fal'ko

Abstract: The creation of moiré superlattices in twisted bilayers of two-dimensional crystals has been utilised to engineer quantum material properties in graphene and transition metal dichalcogenide (TMD) semiconductors. Here, we examine the structural relaxation and electronic properties in small-angle twisted bilayers of metallic NbSe$_2$. Reconstruction appears to be particularly strong for misalignment… ▽ More The creation of moiré superlattices in twisted bilayers of two-dimensional crystals has been utilised to engineer quantum material properties in graphene and transition metal dichalcogenide (TMD) semiconductors. Here, we examine the structural relaxation and electronic properties in small-angle twisted bilayers of metallic NbSe$_2$. Reconstruction appears to be particularly strong for misalignment angles $θ_P$ < 2.9$^o$ and $θ_{AP}$ < 1.2$^o$ for parallel (P) and antiparallel (AP) orientation of monolayers' unit cells, respectively. Multiscale modelling reveals the formation of domains and domain walls with distinct stacking, for which density functional theory (DFT) calculations are used to map the shape of the bilayer Fermi surface and the relative phase of the CDW order in adjacent layers. We find a significant modulation of interlayer coupling across the moiré superstructure and the existence of preferred interlayer orientations of the CDW phase, necessitating the nucleation of CDW discommensurations at superlattice domain walls. △ Less

Submitted 9 October, 2023; v1 submitted 13 December, 2022; originally announced December 2022.

Comments: 18 pages, 14 figures

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Authors: Ciaran Mullan, Sergey Slizovskiy, Jun Yin, Ziwei Wang, Qian Yang, Shuigang Xu, Yaping Yang, Benjamin A. Piot, Sheng Hu, Takashi Taniguchi, Kenji Watanabe, Kostya S. Novoselov, A. K. Geim, Vladimir I. Fal'ko, Artem Mishchenko

Abstract: Van der Waals assembly enables exquisite design of electronic states in two-dimensional (2D) materials, often by superimposing a long-wavelength periodic potential on a crystal lattice using moiré superlattices. Here we show that electronic states in three-dimensional (3D) crystals such as graphite can also be tuned by the superlattice potential arising at the interface with another crystal, namel… ▽ More Van der Waals assembly enables exquisite design of electronic states in two-dimensional (2D) materials, often by superimposing a long-wavelength periodic potential on a crystal lattice using moiré superlattices. Here we show that electronic states in three-dimensional (3D) crystals such as graphite can also be tuned by the superlattice potential arising at the interface with another crystal, namely, crystallographically aligned hexagonal boron nitride. Such alignment is found to result in a multitude of Lifshitz transitions and Brown-Zak oscillations for near-surface 2D states whereas, in high magnetic fields, fractal states of Hofstadter's butterfly extend deep into graphite's bulk. Our work shows a venue to control 3D spectra by using the approach of 2D twistronics. △ Less

Submitted 29 November, 2022; originally announced November 2022.

Umklapp electron-electron scattering in bilayer graphene moiré superlattice

Authors: Christian Moulsdale, Vladimir Fal'ko

Abstract: Recent experimental advances have been marked by the observations of ballistic electron transport in moiré superlattices in highly aligned heterostructures of graphene and hexagonal boron nitride (hBN). Here, we predict that a high-quality graphene bilayer aligned with an hBN substrate features $T^2$-dependent resistivity caused by umklapp electron-electron (Uee) scattering from the moiré superlat… ▽ More Recent experimental advances have been marked by the observations of ballistic electron transport in moiré superlattices in highly aligned heterostructures of graphene and hexagonal boron nitride (hBN). Here, we predict that a high-quality graphene bilayer aligned with an hBN substrate features $T^2$-dependent resistivity caused by umklapp electron-electron (Uee) scattering from the moiré superlattice, that is, a momentum kick by Bragg scattering experienced by a pair of electrons. Substantial Uee scattering appears upon $p$-doping of the bilayer above a threshold density, which depends on the twist angle between graphene and hBN, and its contribution towards the resistivity grows rapidly with hole density until it reaches a peak value, whose amplitude changes non-monotonically with the superlattice period. We also analyse the influence of an electrostatically induced bandgap in the bilayer and trigonal warping it enhances in the electron dispersion on the electron-electron umklapp scattering. △ Less

Submitted 2 November, 2022; originally announced November 2022.

Comments: 5 pages, 3 figures, supplementary material

Semimetallic and semiconducting graphene-hBN multilayers with parallel or reverse stacking

Authors: Xi Chen, Klaus Zollner, Christian Moulsdale, Vladimir I. Fal'ko, Angelika Knothe

Abstract: We theoretically investigate 3D layered crystals of alternating graphene and hBN layers with different symmetries. Depending on the hopping parameters between the graphene layers, we find that these synthetic 3D materials can feature semimetallic, gapped, or Weyl semimetal phases. Our results demonstrate that 3D crystals stacked from individual 2D materials represent a synthetic materials class wi… ▽ More We theoretically investigate 3D layered crystals of alternating graphene and hBN layers with different symmetries. Depending on the hopping parameters between the graphene layers, we find that these synthetic 3D materials can feature semimetallic, gapped, or Weyl semimetal phases. Our results demonstrate that 3D crystals stacked from individual 2D materials represent a synthetic materials class with emergent properties different from their constituents. △ Less

Submitted 25 April, 2023; v1 submitted 28 October, 2022; originally announced October 2022.

Journal ref: Phys. Rev. B 107, 125402 (2023)

Observation of Giant Orbital Magnetic Moments and Paramagnetic Shift in Artificial Relativistic Atoms and Molecules

Authors: Zhehao Ge, Sergey Slizovskiy, Peter Polizogopoulos, Toyanath Joshi, Takashi Taniguchi, Kenji Watanabe, David Lederman, Vladimir I. Fal'ko, Jairo Velasco Jr

Abstract: Massless Dirac fermions have been observed in various materials such as graphene and topological insulators in recent years, thus offering a solid-state platform to study relativistic quantum phenomena. Single quantum dots (QDs) and coupled QDs formed with massless Dirac fermions can be viewed as artificial relativistic atoms and molecules, respectively. Such structures offer a unique platform to… ▽ More Massless Dirac fermions have been observed in various materials such as graphene and topological insulators in recent years, thus offering a solid-state platform to study relativistic quantum phenomena. Single quantum dots (QDs) and coupled QDs formed with massless Dirac fermions can be viewed as artificial relativistic atoms and molecules, respectively. Such structures offer a unique platform to study atomic and molecular physics in the ultra-relativistic regime. Here, we use a scanning tunneling microscope to create and probe single and coupled electrostatically defined graphene QDs to unravel the unique magnetic field responses of artificial relativistic nanostructures. Giant orbital Zeeman splitting and orbital magnetic moment are observed in single graphene QDs. While for coupled graphene QDs, Aharonov Bohm oscillations and strong Van Vleck paramagnetic shift are observed. Such properties of artificial relativistic atoms and molecules can be leveraged for novel magnetic field sensing modalities. △ Less

Submitted 25 October, 2022; originally announced October 2022.

Flat bands for electrons in rhombohedral graphene multilayers with a twin boundary

Authors: Aitor Garcia-Ruiz, Sergey Slizovskiy, Vladimir I. Fal'ko

Abstract: Topologically protected flat surface bands make thin films of rhombohedral graphite an appealing platform for searching for strongly correlated states of 2D electrons. In this work, we study rhombohedral graphite with a twin boundary stacking fault and analyse the semimetallic and topological properties of low-energy bands localised at the surfaces and at the twinned interface. We derive an effect… ▽ More Topologically protected flat surface bands make thin films of rhombohedral graphite an appealing platform for searching for strongly correlated states of 2D electrons. In this work, we study rhombohedral graphite with a twin boundary stacking fault and analyse the semimetallic and topological properties of low-energy bands localised at the surfaces and at the twinned interface. We derive an effective 4-band low energy model, where we implement the full set of Slonczewski-Weiss-McClure (SWMcC) parameters, and find the conditions for the bands to be localised at the twin boundary, protected from the environment-induced disorder. This protection together with a high density of states at the charge neutrality point, in some cases -- due to a Lifshitz transition, makes this system a promising candidate for hosting strongly-correlated effects. △ Less

Submitted 25 November, 2022; v1 submitted 14 October, 2022; originally announced October 2022.

Comments: 8 pages, 5 figures

Journal ref: Advanced materials interfaces 2023

Band alignment and interlayer hybridisation in transition metal dichalcogenide/hexagonal boron nitride heterostructures

Authors: S. J. Magorrian, A. J. Graham, N. Yeung, F. Ferreira, P. V. Nguyen, A. Barinov, V. I. Fal'ko, N. R. Wilson, N. D. M. Hine

Abstract: In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting band hybridisation, are key factors in determining a range of electronic properties. This work examines these effects for heterostructures of transition metal dichalcogenides (TMDs) and hexagonal boron nitride (hBN), an ubiquitous combination given the role of hBN as an encapsulating material. By c… ▽ More In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting band hybridisation, are key factors in determining a range of electronic properties. This work examines these effects for heterostructures of transition metal dichalcogenides (TMDs) and hexagonal boron nitride (hBN), an ubiquitous combination given the role of hBN as an encapsulating material. By comparing results of density functional calculations with experimental angle-resolved photoemission spectroscopy (ARPES) results, we explore the hybridisation between the valence states of the TMD and hBN layers, and show that it introduces avoided crossings between the TMD and hBN bands, with umklapp processes opening `ghost' avoided crossings in individual bands. Comparison between DFT and ARPES spectra for the MoSe$_2$/hBN heterostructure shows that the valence bands of MoSe$_2$ and hBN are significantly further separated in energy in experiment as compared to DFT. We then show that a novel scissor operator can be applied to the hBN valence states in the DFT calculations, to correct the band alignment and enable quantitative comparison to ARPES, explaining avoided crossings and other features of band visibility in the ARPES spectra. △ Less

Submitted 5 October, 2022; v1 submitted 19 July, 2022; originally announced July 2022.

Comments: To appear in 2D materials

Journal ref: 2D Materials 9, 045036 (2022)

Moiré Modulation of Charge Density Waves

Authors: Zachary A. H. Goodwin, Vladimir I. Fal'ko

Abstract: Here we investigate how charge density waves (CDW), inherent to a monolayer, are effected by creating twisted van der Waals structures. Homobilayers of metallic transition metal dichalcogenides (TMDs), at small twist angles where there is significant atomic reconstruction, are utilised as an example to investigate the interplay between the moiré domain structure and CDWs of different periods. For… ▽ More Here we investigate how charge density waves (CDW), inherent to a monolayer, are effected by creating twisted van der Waals structures. Homobilayers of metallic transition metal dichalcogenides (TMDs), at small twist angles where there is significant atomic reconstruction, are utilised as an example to investigate the interplay between the moiré domain structure and CDWs of different periods. For $\sqrt{3}\times\sqrt{3}$ CDWs, there is no geometric constraint to prevent the CDWs from propagating throughout the moiré structure. Whereas for $2\times2$ CDWs, to ensure the CDWs in each layer have the most favourable interactions in the domains, the CDW phase must be destroyed in the connecting domain walls. For $3\times3$ CDWs with twist angles close to 180 degree, moiré-scale triangular structures can form; while close to 0 degree, moiré-scale dimer domains occur. The star-of-David CDW ($\sqrt{13}\times\sqrt{13}$) is found to host CDWs in the domains only, since there is one low energy stacking configuration, similar to $2\times2$ CDWs. These predictions are offered for experimental verification in twisted bilayer metallic TMDs which host CDWs, and we hope this will stimulate further research on the interplay between the moiré supperlattice and CDW phases intrinsic to the comprising 2D materials. △ Less

Submitted 11 October, 2022; v1 submitted 11 July, 2022; originally announced July 2022.

Journal ref: J. Phys.: Condens. Matter 34 494001 (2022)

Band Gap Opening in Bilayer Graphene-CrCl$_3$/CrBr$_3$/CrI$_3$ van der Waals Interfaces

Authors: Giulia Tenasini, David Soler-Delgado, Zhe Wang, Fengrui Yao, Dumitru Dumcenco, Enrico Giannini, Kenji Watanabe, Takashi Taniguchi, Christian Moulsdale, Aitor Garcia-Ruiz, Vladimir I. Fal'ko, Ignacio Gutiérrez-Lezama, Alberto F. Morpurgo

Abstract: We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX$_3$; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX$_3$ takes place (reaching densities in excess of $10^{13}$ cm$^{-2}$), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the ac… ▽ More We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX$_3$; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX$_3$ takes place (reaching densities in excess of $10^{13}$ cm$^{-2}$), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the $σ$ bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl$_3$ and BLG/CrBr$_3$ the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on the magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX$_3$ conduction band are correlated. △ Less

Submitted 24 August, 2022; v1 submitted 5 July, 2022; originally announced July 2022.

Journal ref: Nano Lett., 22 (16), 6760-6766 (2022)

Superexchange and spin-orbit coupling in monolayer and bilayer chromium trihalides

Authors: Kok Wee Song, Vladimir I Fal'ko

Abstract: We build a microscopic model to study the intra- and inter-layer superexchange due to electrons hopping in chromium trihalides ($\mathrm{CrX}_3$, X= Cl, Br, and I). In evaluating the superexchange, we identify the relevant intermediate excitations in the hopping. In our study, we find that the intermediate hole-pairs excitations in the $p$-orbitals on X ion play a crucial role in mediating various… ▽ More We build a microscopic model to study the intra- and inter-layer superexchange due to electrons hopping in chromium trihalides ($\mathrm{CrX}_3$, X= Cl, Br, and I). In evaluating the superexchange, we identify the relevant intermediate excitations in the hopping. In our study, we find that the intermediate hole-pairs excitations in the $p$-orbitals on X ion play a crucial role in mediating various types of exchange interactions. In particular, the inter-layer antiferromagnetic exchange may be realized by the hole-pair-mediated superexchange. Interestingly, we also find that these virtual hopping processes compete with each other leading to weak intra-layer ferromagnetic exchange. In addition, we also study the spin-orbit coupling effects on the superexchange and investigate the Dzyaloshinskii-Moriya interaction. Finally, we extract the microscopic model parameters from density functional theory for analyzing the exchange interactions in a monolayer $\mathrm{CrI}_3$. △ Less

Submitted 2 December, 2022; v1 submitted 1 July, 2022; originally announced July 2022.

Comments: 18 pages, 4 figures, minor corrections with more references added

Journal ref: Phys. Rev. B 106, 245111 (2022)

Scaleability of dielectric susceptibility $ε_{zz}$ with the number of layers and additivity of ferroelectric polarization in van der Waals semiconductors

Authors: Fábio Ferreira, Vladimir Enaldiev, Vladimir Fal'ko

Abstract: We study the dielectric response of few layered crystals of various transition metal dichalcogenides (TMDs) and hexagonal Boron Nitride (hBN). We showed that the out-of-plane polarizability of a multilayer crystal (which characterizes response to the external displacement field) scales linearly with the number of layers, $α_{zz}^{NL} =N α_{zz}^{1L}$, independently of the stacking configuration in… ▽ More We study the dielectric response of few layered crystals of various transition metal dichalcogenides (TMDs) and hexagonal Boron Nitride (hBN). We showed that the out-of-plane polarizability of a multilayer crystal (which characterizes response to the external displacement field) scales linearly with the number of layers, $α_{zz}^{NL} =N α_{zz}^{1L}$, independently of the stacking configuration in the film. We also established additivity of ferroelectric polarizations of consecutive interfaces in case when such interfaces have broken inversion symmetry. Then we used the obtained data of monolayer $α_{zz}^{1L}$ to calculate the values of the dielectric susceptibilities for semiconductor TMDs and hBN bulk crystals. △ Less

Submitted 18 June, 2022; originally announced June 2022.

Comments: 8 pages, 4 figures

Self-organised quantum dots in marginally twisted MoSe$_2$/WSe$_2$ and MoS$_2$/WS$_2$ bilayers

Authors: V. V. Enaldiev, F. Ferreira, J. G. McHugh, V. I. Fal'ko

Abstract: Moiré superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, $θ$) bilayers of nearly lattice-matched two-dimensional (2D) crystals moiré patterns take the form of domains of commensurate stacking, separated by a network of domain walls (NoDW) with strain hot spots at the NoDW nodes. Here, we show that, for type-I… ▽ More Moiré superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, $θ$) bilayers of nearly lattice-matched two-dimensional (2D) crystals moiré patterns take the form of domains of commensurate stacking, separated by a network of domain walls (NoDW) with strain hot spots at the NoDW nodes. Here, we show that, for type-II transition metal dichalcogenide bilayers MoX$_2$/WX$_2$ (X=S, Se), the hydrostatic strain component in these hot spots creates quantum dots for electrons and holes. We investigate the electron/hole states bound by such objects, discussing their manifestations via the intralayer intraband infrared transitions. The electron/hole confinement, which is strongest for $θ<0.5^{\circ}$, leads to a red-shift of their recombination line producing single photon emitters (SPE) broadly tuneable around 1\,eV by misalignment angle. These self-organised dots can form in bilayers with both aligned and inverted MoX$_2$ and WX$_2$ unit cells, emitting photons with different polarizations. We also find that the hot spots of strain reduce the intralayer MoX$_2$ A-exciton energy, enabling selective population of the quantum dot states. △ Less

Submitted 24 October, 2022; v1 submitted 14 April, 2022; originally announced April 2022.

Journal ref: npj 2D Mater Appl 6, 74 (2022)

Kagomé network of chiral miniband-edge states in double-aligned graphene-hexagonal boron nitride structures

Authors: Christian Moulsdale, Angelika Knothe, Vladimir Fal'ko

Abstract: Twistronic heterostructures have recently emerged as a new class of quantum electronic materials with properties determined by the twist angle between the adjacent two-dimensional materials. Here we study moiré superlattice minibands in graphene (G) encapsulated in hexagonal boron nitride (hBN) with an almost perfect alignment with both the top and bottom hBN crystals. We show that, for such an or… ▽ More Twistronic heterostructures have recently emerged as a new class of quantum electronic materials with properties determined by the twist angle between the adjacent two-dimensional materials. Here we study moiré superlattice minibands in graphene (G) encapsulated in hexagonal boron nitride (hBN) with an almost perfect alignment with both the top and bottom hBN crystals. We show that, for such an orientation of the unit cells of the hBN layers that locally breaks inversion symmetry of the graphene lattice, the hBN/G/hBN structure features a Kagomé network of topologically protected chiral states with energies near the miniband edge, propagating along the lines separating the areas with different miniband Chern numbers. △ Less

Submitted 21 December, 2022; v1 submitted 14 February, 2022; originally announced February 2022.

Comments: 6 pages, 3 figures (Supplemental Material: 7 pages, 5 figures, 1 table)

Journal ref: Phys. Rev. B 105, L201112 (2022)

Light sources with bias tunable spectrum based on van der Waals interface transistors

Authors: Hugo Henck, Diego Mauro, Daniil Domaretskiy, Marc Philippi, Shahriar Memaran, Wenkai Zheng, Zhengguang Lu, Dmitry Shcherbakov, Chun Ning Lau, Dmitry Smirnov, Luis Balicas, Kenji Watanabe, Vladimir I. Fal'ko, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo

Abstract: Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broa… ▽ More Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -- by suitably selecting the material forming the interfaces -- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods. △ Less

Submitted 8 July, 2022; v1 submitted 4 January, 2022; originally announced January 2022.

Report number: 10.1038/s41467-022-31605-9

Journal ref: Nature Communications 13, 3917 (2022)

A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors

Authors: V. V. Enaldiev, F. Ferreira, V. I. Fal'ko

Abstract: Moiré structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully p… ▽ More Moiré structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully parametrized string-theory-like description of the domain wall network and show that it undergoes a qualitative change, after the arcs of partial dislocation like domain walls merge (near the network nodes) into streaks of perfect screw dislocations, which happens at a threshold displacement field dependent on the DWN period. △ Less

Submitted 1 November, 2021; originally announced November 2021.

Journal ref: Nano Letters (2022)

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Authors: Astrid Weston, Eli G Castanon, Vladimir Enaldiev, Fabio Ferreira, Shubhadeep Bhattacharjee, Shuigang Xu, Hector Corte-Leon, Zefei Wu, Nickolas Clark, Alex Summerfield, Teruo Hashimoto, Yunze Gao, Wendong Wang, Matthew Hamer, Harriet Read, Laura Fumagalli, Andrey V Kretinin, Sarah J. Haigh, Olga Kazakova, A. K. Geim, Vladimir I. Fal'ko, Roman Gorbachev

Abstract: Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crysta… ▽ More Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions. △ Less

Submitted 14 August, 2021; originally announced August 2021.

Comments: 15 pages, 3 figures

Out-of-equilibrium criticalities in graphene superlattices

Authors: Alexey I. Berdyugin, Na Xin, Haoyang Gao, Sergey Slizovskiy, Zhiyu Dong, Shubhadeep Bhattacharjee, P. Kumaravadivel, Shuigang Xu, L. A. Ponomarenko, Matthew Holwill, D. A. Bandurin, Minsoo Kim, Yang Cao, M. T. Greenaway, K. S. Novoselov, I. V. Grigorieva, K. Watanabe, T. Taniguchi, V. I. Fal'ko, L. S. Levitov, R. Krishna Kumar, A. K. Geim

Abstract: In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-cu… ▽ More In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics resembling those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common for all graphene-based superlattices. △ Less

Submitted 11 February, 2022; v1 submitted 23 June, 2021; originally announced June 2021.

Comments: 22 pages, 11 figures

Journal ref: Science 375, 430-433 (2022)

Probing two-electron multiplets in bilayer graphene quantum dots

Authors: Samuel Möller, Luca Banszerus, Angelika Knothe, Corinne Steiner, Eike Icking, Stefan Trellenkamp, Florian Lentz, Kenji Watanabe, Takashi Taniguchi, Leonid Glazman, Vladimir Fal'ko, Christian Volk, Christoph Stampfer

Abstract: We report on finite bias spectroscopy measurements of the two-electron spectrum in a gate defined bilayer graphene (BLG) quantum dot for varying magnetic fields. The spin and valley degree of freedom in BLG give rise to multiplets of 6 orbital symmetric and 10 orbital anti-symmetric states. We find that orbital symmetric states are lower in energy and separated by $\approx 0.4 - 0.8$ meV from orbi… ▽ More We report on finite bias spectroscopy measurements of the two-electron spectrum in a gate defined bilayer graphene (BLG) quantum dot for varying magnetic fields. The spin and valley degree of freedom in BLG give rise to multiplets of 6 orbital symmetric and 10 orbital anti-symmetric states. We find that orbital symmetric states are lower in energy and separated by $\approx 0.4 - 0.8$ meV from orbital anti-symmetric states. The symmetric multiplet exhibits an additional energy splitting of its 6 states of $\approx 0.15 - 0.5$ meV due to lattice scale interactions. The experimental observations are supported by theoretical calculations, which allow to determine that inter-valley scattering and 'current-current' interaction constants are of the same magnitude in BLG. △ Less

Submitted 10 January, 2022; v1 submitted 15 June, 2021; originally announced June 2021.

Comments: 6 pages, 3 figures

Scattering between minivalleys in a moiré material

Authors: Petar Tomić, Peter Rickhaus, Aitor Garcia-Ruiz, Giulia Zheng, Elías Portolés, Vladimir Fal'ko, Kenji Watanabe, Takashi Taniguchi, Klaus Ensslin, Thomas Ihn, Folkert K. de Vries

Abstract: A unique feature of the complex band structures of moiré materials is the presence of minivalleys, their hybridization, and scattering between them. Here we investigate magneto-transport oscillations caused by scattering between minivalleys - a phenomenon analogous to magneto-intersubband oscillations - in a twisted double bilayer graphene sample with a twist angle of 1.94°. We study and discuss t… ▽ More A unique feature of the complex band structures of moiré materials is the presence of minivalleys, their hybridization, and scattering between them. Here we investigate magneto-transport oscillations caused by scattering between minivalleys - a phenomenon analogous to magneto-intersubband oscillations - in a twisted double bilayer graphene sample with a twist angle of 1.94°. We study and discuss the potential scattering mechanisms and find an electron-phonon mechanism and valley conserving scattering to be likely. Finally, we discuss the relevance of our findings for different materials and twist angles. △ Less

Submitted 14 June, 2021; originally announced June 2021.

Comments: 4 figures

Multifaceted moiré superlattice physics in twisted WSe$_2$ bilayers

Authors: S. J. Magorrian, V. V. Enaldiev, V. Zólyomi, Fábio Ferreira, Vladimir I. Fal'ko, David A. Ruiz-Tijerina

Abstract: Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (… ▽ More Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (P) and anti-parallel (AP) orientations of the monolayer unit cells. We apply these models to describe moiré superlattice effects in twisted WSe${}_2$ bilayers, in conjunction with microscopic \emph{ab initio} calculations, and considering the influence of encapsulation, pressure and an electric displacement field. Our analysis takes into account mesoscale lattice relaxation, interlayer hybridisation, piezopotentials, and a weak ferroelectric charge transfer between the layers, and describes a multitude of possibilities offered by this system, depending on the choices of P or AP orientation, twist angle magnitude, and electron/hole valley. △ Less

Submitted 28 September, 2021; v1 submitted 10 June, 2021; originally announced June 2021.

Comments: 44 pages, 27 figures, 6 appendices. For v2: Modelling and analysis for Q-point bands and minibands added

Journal ref: Phys. Rev. B 104, 125440 (2021)

Tunable spin-orbit coupling in two-dimensional InSe

Authors: A. Ceferino, S. J. Magorrian, V. Zólyomi, D. A. Bandurin, A. K. Geim, A. Patanè, Z. D. Kovalyuk, Z. R. Kudrynskyi, I. V. Grigorieva, V. I. Fal'ko

Abstract: We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $γ$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k\cdot p}$ tight-binding… ▽ More We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $γ$-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid $\mathbf{k\cdot p}$ tight-binding model, fully parameterized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment. △ Less

Submitted 8 June, 2021; originally announced June 2021.

Journal ref: Phys. Rev. B 104, 125432 (2021)

Full Slonczewski-Weiss-McClure parametrization of few-layer twistronic graphene

Authors: Aitor Garcia-Ruiz, Haiyao Deng, Vladimir V. Enaldiev, Vladimir I. Fal'ko

Abstract: We use a hybrid k dot p theory - tight binding (HkpTB) model to describe interlayer coupling simultaneously in both Bernal and twisted graphene structures. For Bernal-aligned interfaces, HkpTB is parametrized using the full Slonczewski-Weiss-McClure (SWMcC) Hamiltonian of graphite, which is then used to refine the commonly used minimal model for twisted interfaces, by deriving additional terms tha… ▽ More We use a hybrid k dot p theory - tight binding (HkpTB) model to describe interlayer coupling simultaneously in both Bernal and twisted graphene structures. For Bernal-aligned interfaces, HkpTB is parametrized using the full Slonczewski-Weiss-McClure (SWMcC) Hamiltonian of graphite, which is then used to refine the commonly used minimal model for twisted interfaces, by deriving additional terms that reflect all details of the full SWMcC model of graphite. We find that these terms introduce some electron-hole asymmetry in the band structure of twisted bilayers, but in twistronic multilayer graphene, they produce only a subtle change of moire miniband spectra, confirming the broad applicability of the minimal model for implementing the twisted interface coupling in such systems. △ Less

Submitted 30 April, 2021; originally announced May 2021.

Journal ref: Phys. Rev. B 104, 085402 (2021)

Electron transport in dual-gated three-layer MoS$_2$

Authors: M. Masseroni, T. Davatz, R. Pisoni, F. K. de Vries, P. Rickhaus, T. Taniguchi, K. Watanabe, V. Fal'ko, T. Ihn, K. Ensslin

Abstract: The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the conduction band of dual-gated three-layer MoS$_2$ by means of magnetotransport experiments. The total carrier density is tuned by voltages applied between MoS… ▽ More The low-energy band structure of few-layer MoS$_2$ is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challenging due to complex multi band behavior. We investigate the conduction band of dual-gated three-layer MoS$_2$ by means of magnetotransport experiments. The total carrier density is tuned by voltages applied between MoS$_2$ and both top and bottom gate electrodes. For asymmetrically biased top and bottom gates, electrons accumulate in the layer closest to the positively biased electrode. In this way, the three-layer MoS$_2$ can be tuned to behave electronically like a monolayer. In contrast, applying a positive voltage on both gates leads to the occupation of all three layers. Our analysis of the Shubnikov--de Haas oscillations originating from different bands lets us attribute the corresponding carrier densities in the top and bottom layers. We find a twofold Landau level degeneracy for each band, suggesting that the minima of the conduction band lie at the $\pm K$ points of the first Brillouin zone. This is in contrast to band structure calculations for zero layer asymmetry, which report minima at the $Q$ points. Even though the interlayer tunnel coupling seems to leave the low-energy conduction band unaffected, we observe scattering of electrons between the outermost layers for zero layer asymmetry. The middle layer remains decoupled due to the spin-valley symmetry, which is inverted for neighboring layers. When the bands of the outermost layers are energetically in resonance, interlayer scattering takes place, leading to an enhanced resistance and to magneto-interband oscillations. △ Less

Submitted 29 April, 2021; v1 submitted 18 April, 2021; originally announced April 2021.

Comments: 12 pages, 8 figures

Journal ref: Phys. Rev. Research 3, 023047 (2021)

Theory of tunneling spectra for a few-electron bilayer graphene quantum dot

Authors: Angelika Knothe, Leonid I. Glazman, Vladimir I. Fal'ko

Abstract: The tuneability and control of quantum nanostructures in two-dimensional materials offer promising perspectives for their use in future electronics. It is hence necessary to analyze quantum transport in such nanostructures. Material properties such as a complex dispersion, topology, and charge carriers with multiple degrees of freedom, are appealing for novel device functionalities but complicate… ▽ More The tuneability and control of quantum nanostructures in two-dimensional materials offer promising perspectives for their use in future electronics. It is hence necessary to analyze quantum transport in such nanostructures. Material properties such as a complex dispersion, topology, and charge carriers with multiple degrees of freedom, are appealing for novel device functionalities but complicate their theoretical description. Here, we study quantum tunnelling transport across a few-electron bilayer graphene quantum dot. We demonstrate how to uniquely identify single- and two-electron dot states' orbital, spin, and valley composition from differential conductance in a finite magnetic field. Furthermore, we show that the transport features manifest splittings in the dot's spin and valley multiplets induced by interactions and magnetic field (the latter splittings being a consequence of bilayer graphene's Berry curvature). Our results elucidate spin- and valley-dependent tunnelling mechanisms and will help to utilize bilayer graphene quantum dots, e.g., as spin and valley qubits. △ Less

Submitted 7 April, 2021; originally announced April 2021.

Comments: 18 pages, 12 figures

Control of Giant Topological Magnetic Moment and Valley Splitting in Trilayer Graphene

Authors: Zhehao Ge, Sergey Slizovskiy, Fredric Joucken, Eberth A. Quezada, Takashi Taniguchi, Kenji Watanabe, Vladimir I. Fal'ko, Jairo Velasco Jr

Abstract: Bloch states of electrons in honeycomb two-dimensional crystals with multi-valley band structure and broken inversion symmetry have orbital magnetic moments of a topological nature. In crystals with two degenerate valleys, a perpendicular magnetic field lifts the valley degeneracy via a Zeeman effect due to these magnetic moments, leading to magnetoelectric effects which can be leveraged for creat… ▽ More Bloch states of electrons in honeycomb two-dimensional crystals with multi-valley band structure and broken inversion symmetry have orbital magnetic moments of a topological nature. In crystals with two degenerate valleys, a perpendicular magnetic field lifts the valley degeneracy via a Zeeman effect due to these magnetic moments, leading to magnetoelectric effects which can be leveraged for creating valleytronic devices. In this work, we demonstrate that trilayer graphene with Bernal stacking, (ABA TLG) hosts topological magnetic moments with a large and widely tunable valley g-factor, reaching a value 1050 at the extreme of the studied parametric range. The reported experiment consists in sublattice-resolved scanning tunneling spectroscopy under perpendicular electric and magnetic fields that control the TLG bands. The tunneling spectra agree very well with the results of theoretical modeling that includes the full details of the TLG tight-binding model and accounts for a quantum-dot-like potential profile formed electrostatically under the scanning tunneling microscope tip. △ Less

Submitted 21 September, 2021; v1 submitted 5 April, 2021; originally announced April 2021.

Comments: Manuscript and Supporting Information updated

Journal ref: Phys. Rev. Lett. 127, 136402 (2021)

Excited Rydberg States in TMD Heterostructures

Authors: Jacob J. S. Viner, Liam P. McDonnell, David A. Ruiz-Tijerina, Pasqual Rivera, Xiaodong Xu, Vladimir I. Fal'ko, David C. Smith

Abstract: The functional form of Coulomb interactions in the transition metal dichalcogenides and other van der Waals solids is critical to many of their unique properties, e.g. strongly-correlated electron states, superconductivity and emergent ferromagnetism. This paper presents measurements of key excitonic energy levels in MoSe2/WSe2 heterostructures. These measurements are obtained from resonance Raman… ▽ More The functional form of Coulomb interactions in the transition metal dichalcogenides and other van der Waals solids is critical to many of their unique properties, e.g. strongly-correlated electron states, superconductivity and emergent ferromagnetism. This paper presents measurements of key excitonic energy levels in MoSe2/WSe2 heterostructures. These measurements are obtained from resonance Raman experiments on specific Raman peaks only observed at excited states of the excitons. This data is used to validate a model of the Coulomb potential in these structures which predicts the exciton energies to within ~5 meV / 2.5%. This model is used to determine the effect of heterostructure formation on the single-particle band gaps of the layers and will have a wide applicability in designing the next generation of more complex transition metal dichalcogenide structures. △ Less

Submitted 16 March, 2021; originally announced March 2021.

Comments: 19 pages, 3 figures and an additional 14 pages, 7 figures of supplimentary info. Submitted to IOP 2D Materials

Band energy landscapes in twisted homobilayers of transition metal dichalcogenides

Authors: Fábio Ferreira, Samuel Magorrian, Vladimir Enaldiev, David Ruiz-Tijerina, Vladimir Fal'ko

Abstract: Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heterostructures. Here, we study how interlayer hybridization, weak ferroelectric charge transfer between layers, and piezoelectric response to deformations set the valence and conduction band edges across the moir{é} superce… ▽ More Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heterostructures. Here, we study how interlayer hybridization, weak ferroelectric charge transfer between layers, and piezoelectric response to deformations set the valence and conduction band edges across the moir{é} supercell in twistronic homobilayers of MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$. We show that, due to the lack of inversion symmetry in the monolayer crystals, bilayers with parallel (P) and anti-parallel (AP) unit cell orientations display contrasting behaviors. For P-bilayers at small twist angles we find band edges in the middle of triangular domains of preferential stacking. In AP-bilayers at marginal twist angles ($θ_{AP} < 1^\circ$) the band edges are located in small regions around the intersections of domain walls, giving highly localized quantum dot states. △ Less

Submitted 17 June, 2021; v1 submitted 10 March, 2021; originally announced March 2021.

Comments: 21 pages, 15 figures

Journal ref: Appl. Phys. Lett. 118, 241602 (2021)

Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors

Authors: F. Ferreira, V. V. Enaldiev, V. I. Fal'ko, S. J. Magorrian

Abstract: In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs) - in particular, WSe$_2$ - for which we find a substantial stacking-dependent charge trans… ▽ More In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs) - in particular, WSe$_2$ - for which we find a substantial stacking-dependent charge transfer, and InSe, for which the charge transfer is found to be negligibly small. The information obtained about TMDs is then used to map potentials generated by the interlayer charge transfer across the moiré superlattice in twistronic bilayers. △ Less

Submitted 7 June, 2021; v1 submitted 10 March, 2021; originally announced March 2021.

Comments: To appear in Scientific Reports

Journal ref: Sci. Rep. 11, 13422 (2021)

Kondo effect and spin-orbit coupling in graphene quantum dots

Authors: Annika Kurzmann, Yaakov Kleeorin, Chuyao Tong, Rebekka Garreis, Angelika Knothe, Marius Eich, Christopher Mittag, Carolin Gold, Folkert K. de Vries, Kenji Watanabe, Takashi Taniguchi, Vladimir Fal'ko, Yigal Meir, Thomas Ihn, Klaus Ensslin

Abstract: The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - re… ▽ More The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - remain rare. Here we report the observation of fully screened and underscreened Kondo effects in quantum dots in bilayer graphene. More generally, we introduce a unique platform for studying Kondo physics. In contrast to carbon nanotubes, whose curved surfaces give rise to strong spin-orbit coupling breaking the SU(4) symmetry of the electronic states relevant for the Kondo effect, we study a nominally flat carbon material with small spin-orbit coupling. Moreover, the unusual two-electron triplet ground state in bilayer graphene dots provides a route to exploring the underscreened spin-1 Kondo effect. △ Less

Submitted 8 March, 2021; originally announced March 2021.

Journal ref: Nat Commun 12, 6004 (2021)

Shell Filling and Trigonal Warping in Graphene Quantum Dots

Authors: Rebekka Garreis, Angelika Knothe, Chuyao Tong, Marius Eich, Carolin Gold, Kenji Watanabe, Takashi Taniguchi, Vladimir Fal'ko, Thomas Ihn, Klaus Ensslin, Annika Kurzmann

Abstract: Transport measurements through a few-electron circular quantum dot in bilayer graphene display bunching of the conductance resonances in groups of four, eight and twelve. This is in accordance with the spin and valley degeneracies in bilayer graphene and an additional threefold 'minivalley degeneracy' caused by trigonal warping. For small electron numbers, implying a small dot size and a small dis… ▽ More Transport measurements through a few-electron circular quantum dot in bilayer graphene display bunching of the conductance resonances in groups of four, eight and twelve. This is in accordance with the spin and valley degeneracies in bilayer graphene and an additional threefold 'minivalley degeneracy' caused by trigonal warping. For small electron numbers, implying a small dot size and a small displacement field, a two-dimensional s- and then a p-shell are successively filled with four and eight electrons, respectively. For electron numbers larger than twelve, as the dot size and the displacement field increase, the single-particle ground state evolves into a three-fold degenerate minivalley ground state. A transition between these regimes is observed in our measurements and can be described by band-structure calculations. Measurements in magnetic field confirm Hund's second rule for spin filling of the quantum dot levels, emphasizing the importance of exchange interaction effects. △ Less

Submitted 12 April, 2021; v1 submitted 16 November, 2020; originally announced November 2020.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. Lett. 126, 147703 (2021)

Edge photocurrent in bilayer graphene due to inter-Landau-level transitions

Authors: S. Candussio, M. V. Durnev, S. Slizovskiy, T. Jötten, J. Keil, V. V. Bel'kov, J. Yin, Y. Yang, S. -K. Son, A. Mishchenko, V. Fal'ko, S. D. Ganichev

Abstract: We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier densities) and intra-band (at high densities) transitions between Landau levels (LL). While the intra-band LL transitions can be traced to the classical cyclotro… ▽ More We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier densities) and intra-band (at high densities) transitions between Landau levels (LL). While the intra-band LL transitions can be traced to the classical cyclotron resonance (CR) and produce strong resonant features, the inter-band-LL resonances have quantum nature and lead to the weaker features in the measured photocurrent spectra. The magnitude and polarization properties of the observed features agree with the semiclassical theory of the intra-band edge photogalvanic effect, including its Shubnikov-de-Haas oscillations at low temperatures. △ Less

Submitted 24 February, 2021; v1 submitted 12 November, 2020; originally announced November 2020.

Comments: 11 pages, 11 figures

Journal ref: Phys. Rev. B 103, 125408 (2021)

Piezoelectric networks and ferroelectric moiré superlattice domains in twistronic WS$_2$/MoS$_2$ and WSe$_2$/MoSe$_2$ bilayers

Authors: V. V. Enaldiev, F. Ferreira, S. J. Magorrian, V. I. Fal'ko

Abstract: Twistronic van der Waals heterostrutures offer exciting opportunities for engineering optoelectronic properties of nanomaterials. Here, we use multiscale modeling to study trapping of charge carriers and excitons by ferroelectric polarisation and piezoelectric charges by domain structures in twistronic WX$_2$/MoX$_2$ bilayers (X=S,Se). For almost aligned 2H-type bilayers, we find that holes and el… ▽ More Twistronic van der Waals heterostrutures offer exciting opportunities for engineering optoelectronic properties of nanomaterials. Here, we use multiscale modeling to study trapping of charge carriers and excitons by ferroelectric polarisation and piezoelectric charges by domain structures in twistronic WX$_2$/MoX$_2$ bilayers (X=S,Se). For almost aligned 2H-type bilayers, we find that holes and electrons are trapped in the opposite -- WMo and XX (tungsten over molybdenum {\it versus} overlaying chalcogens) -- corners of the honeycomb domain wall network, swapping their position at a twist angle $0.2^{\circ}$, with XX corners providing $30$\,meV deep traps for the interlayer excitons for all angles. In 3R-type bilayers, both electrons and holes are trapped in triangular "3R stacking" domains, where WX$_2$ chalcogens set over MoX$_2$ molybdenums, which act as $130$\,meV deep quantum boxes for interlayer excitons for twist angles $\lesssim 1^{\circ}$, for larger angles shifting towards domain wall network XX stacking sites. △ Less

Submitted 4 February, 2021; v1 submitted 9 November, 2020; originally announced November 2020.

Journal ref: 2D Mater. 8 025030 (2021)

Spin-valley collective modes of the electron liquid in graphene

Authors: Zachary M. Raines, Vladimir I. Fal'ko, Leonid I. Glazman

Abstract: We develop the theory of collective modes supported by a Fermi liquid of electrons in pristine graphene. Under reasonable assumptions regarding the electron-electron interaction, all the modes but the plasmon are over-damped. In addition to the $SU(2)$ symmetric spin mode, these include also the valley imbalance modes obeying a $U(1)$ symmetry, and a $U(2)$ symmetric valley spin imbalance mode. We… ▽ More We develop the theory of collective modes supported by a Fermi liquid of electrons in pristine graphene. Under reasonable assumptions regarding the electron-electron interaction, all the modes but the plasmon are over-damped. In addition to the $SU(2)$ symmetric spin mode, these include also the valley imbalance modes obeying a $U(1)$ symmetry, and a $U(2)$ symmetric valley spin imbalance mode. We derive the interactions and diffusion constants characterizing the over-damped modes. The corresponding relaxation rates set fundamental constraints on graphene valley- and spintronics applications. △ Less

Submitted 22 February, 2021; v1 submitted 28 October, 2020; originally announced October 2020.

Comments: 7 pages + 12 pages 1 figure supplemental material

Journal ref: Phys. Rev. B 103, 075422 (2021)

Superposition of intra- and inter-layer excitons in twistronic MoSe$_2$/WSe$_2$ bilayers probed by resonant Raman scattering

Authors: Liam P. McDonnell, Jacob J. S. Viner, David A. Ruiz-Tijerina, Pasqual Rivera, Xiaodong Xu, Vladimir I. Fal'ko, David C. Smith

Abstract: Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant interlayer hybridisation qualitatively modifies the excitons in such heterostructures, transforming these optically active modes into superposition states of interlayer… ▽ More Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant interlayer hybridisation qualitatively modifies the excitons in such heterostructures, transforming these optically active modes into superposition states of interlayer and intralayer excitons. For MoSe$_2$/WSe$_2$ heterostructures, strong hybridization occurs between the holes in the spin-split valence band of WSe$_2$ and in the top valence band of MoSe$_2$, especially when both are bound to the same electron in the lowest conduction band of WSe$_2$. Here we use resonance Raman scattering to provide direct evidence for the hybridisation of excitons in twistronic MoSe$_2$/WSe$_2$ structures, by observing scattering of specific excitons by phonons in both WSe$_2$ and MoSe$_2$. We also demonstrate that resonance Raman scattering spectroscopy opens up a wide range of possibilities for quantifying the layer composition of the superposition states of the exciton and the interlayer hybridisation parameters in heterostructures of two-dimensional materials. △ Less

Submitted 5 October, 2020; originally announced October 2020.

Comments: 32 pages, 5 figures, 8 supplementary figures, 8 supplementary tables. 2D Mater. (2021)