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Disruptive Atomic Jumps Induce Grain Boundary Stagnation
Authors:
Xinyuan Song,
Chuang Deng
Abstract:
Grain growth in polycrystalline materials can be impeded by grain boundary (GB) stagnation. Using atomistic simulations, we unveil a novel mechanism in this study that explains GB stagnation in the absence of solutes and other impurities: disruptive atomic jumps in the GB area. These disruptive atomic jumps can be activated by both high driving forces and high temperatures, with even jumps of a fe…
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Grain growth in polycrystalline materials can be impeded by grain boundary (GB) stagnation. Using atomistic simulations, we unveil a novel mechanism in this study that explains GB stagnation in the absence of solutes and other impurities: disruptive atomic jumps in the GB area. These disruptive atomic jumps can be activated by both high driving forces and high temperatures, with even jumps of a few atoms capable of causing the stagnation of an entire GB. This mechanism also explains the non-Arrhenius behavior observed in some GBs. Additionally, a large model size could increase the rate of disruptive atomic jumps, and a clear transition in thermal behavior is observed with the increase of the GB size in GBs exhibiting clear thermally activated stagnation. Our further investigation shows that the disruptive atoms involved in these jumps do not differ from other GB atoms in terms of atomic energy, volume, density, local entropy, or Voronoi tessellation, and no "jam transition" was observed in the energy barrier spectra. This fact makes those disruptive jumps challenging to detect. To address this issue, we propose a displacement vector analysis method that effectively identifies these subtle disruptive jumps.
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Submitted 9 May, 2024;
originally announced May 2024.
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Grain boundary segregation prediction with a dual-solute model
Authors:
Zuoyong Zhang,
Chuang Deng
Abstract:
Solute segregation along grain boundaries (GBs) profoundly affects their thermodynamic and kinetic behaviors in polycrystalline materials. Recently, the spectral approach has emerged as a powerful tool to predict GB segregation. However, previous GB segregation predictions using this method relied heavily on single-solute segregation energy spectrum without solute-solute interactions, which were o…
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Solute segregation along grain boundaries (GBs) profoundly affects their thermodynamic and kinetic behaviors in polycrystalline materials. Recently, the spectral approach has emerged as a powerful tool to predict GB segregation. However, previous GB segregation predictions using this method relied heavily on single-solute segregation energy spectrum without solute-solute interactions, which were often incorporated through a fitting parameter. In this work, we developed a dual-solute model whose segregation energy spectrum intrinsically incorporates solute-solute interactions. It was first validated for GB segregation prediction in the Al-Mg system and then extended to several other distinct binary alloy systems. The dual-solute model shows significant improvement over the single-solute model and can accurately predict the real segregation states obtained by hybrid Molecular Dynamics/Monte Carlo simulations within a broad temperature range with different solute concentrations before forming secondary phases. This dual-solute model provides an effective method for accurately predicting GB segregation in nanocrystalline metals.
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Submitted 16 July, 2024; v1 submitted 23 April, 2024;
originally announced April 2024.
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Exploring Hilbert-Space Fragmentation on a Superconducting Processor
Authors:
Yong-Yi Wang,
Yun-Hao Shi,
Zheng-Hang Sun,
Chi-Tong Chen,
Zheng-An Wang,
Kui Zhao,
Hao-Tian Liu,
Wei-Guo Ma,
Ziting Wang,
Hao Li,
Jia-Chi Zhang,
Yu Liu,
Cheng-Lin Deng,
Tian-Ming Li,
Yang He,
Zheng-He Liu,
Zhen-Yu Peng,
Xiaohui Song,
Guangming Xue,
Haifeng Yu,
Kaixuan Huang,
Zhongcheng Xiang,
Dongning Zheng,
Kai Xu,
Heng Fan
Abstract:
Isolated interacting quantum systems generally thermalize, yet there are several counterexamples for the breakdown of ergodicity, such as many-body localization and quantum scars. Recently, ergodicity breaking has been observed in systems subjected to linear potentials, termed Stark many-body localization. This phenomenon is closely associated with Hilbert-space fragmentation, characterized by a s…
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Isolated interacting quantum systems generally thermalize, yet there are several counterexamples for the breakdown of ergodicity, such as many-body localization and quantum scars. Recently, ergodicity breaking has been observed in systems subjected to linear potentials, termed Stark many-body localization. This phenomenon is closely associated with Hilbert-space fragmentation, characterized by a strong dependence of dynamics on initial conditions. Here, we experimentally explore initial-state dependent dynamics using a ladder-type superconducting processor with up to 24 qubits, which enables precise control of the qubit frequency and initial state preparation. In systems with linear potentials, we observe distinct non-equilibrium dynamics for initial states with the same quantum numbers and energy, but with varying domain wall numbers. This distinction becomes increasingly pronounced as the system size grows, in contrast with disordered interacting systems. Our results provide convincing experimental evidence of the fragmentation in Stark systems, enriching our understanding of the weak breakdown of ergodicity.
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Submitted 14 March, 2024;
originally announced March 2024.
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Symmetry-breaking-dependent electronic structures and strain regulation in ReSeS monolayer
Authors:
Texture Lin,
J. W. Ma,
H. C. Deng,
L. Z. Liu
Abstract:
Electronic devices for information storages and processes can be further optimized by introducing the degree of freedom of anisotropy, which is strongly dependent of their structural symmetry. Herein, a ReSeS monolayer with asymmetrical double-faces are proposed to disclose the anisotropic electronic structure. Meanwhile infrared fingerprint based on the lattice vibration is also adopted to demons…
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Electronic devices for information storages and processes can be further optimized by introducing the degree of freedom of anisotropy, which is strongly dependent of their structural symmetry. Herein, a ReSeS monolayer with asymmetrical double-faces are proposed to disclose the anisotropic electronic structure. Meanwhile infrared fingerprint based on the lattice vibration is also adopted to demonstrate the symmetry-breaking-dependent structural transformation. First-principles calculations demonstrate that the geometry deformation will induce the reconstruction of electronic structure. Ulteriorly, both the dynamic properties of carrier and spectroscopic response can be regulated by external strain and displays anisotropic behaviors. Our idea provides threads for designing new regulable optoelectronic devices.
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Submitted 2 March, 2024;
originally announced March 2024.
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Coexistence of Dirac fermion and charge density wave in square-net-based semimetal LaAuSb2
Authors:
Xueliang Wu,
Zhixiang Hu,
David Graf,
Yu Liu,
Chaoyue Deng,
Huixia Fu,
Asish K. Kundu,
Tonica Valla,
Cedomir Petrovic,
Aifeng Wang
Abstract:
We report a comprehensive study of magnetotransport properties, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations on self-flux grown LaAuSb$_2$ single crystals. Resistivity and Hall measurements reveal a charge density wave (CDW) transition at 77 K. MR and de Haas-Van Alphen (dHvA) measurements indicate that the transport properties of LaAuSb$_2$ a…
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We report a comprehensive study of magnetotransport properties, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations on self-flux grown LaAuSb$_2$ single crystals. Resistivity and Hall measurements reveal a charge density wave (CDW) transition at 77 K. MR and de Haas-Van Alphen (dHvA) measurements indicate that the transport properties of LaAuSb$_2$ are dominated by Dirac fermions that arise from Sb square nets. ARPES measurements and DFT calculations reveal an electronic structure with a common feature of the square-net-based topological semimetals, which is in good agreement with the magnetotransport properties. Our results indicate the coexistence of CDW and Dirac fermion in LaAuSb$_2$, both of which are linked to the bands arising from the Sb-square net, suggesting that the square net could serve as a structural motif to explore various electronic orders.
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Submitted 28 December, 2023;
originally announced December 2023.
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Intrinsic Grain Boundary Shear Coupling Tensor
Authors:
Xinyuan Song,
Liang Yang,
Chuang Deng
Abstract:
Grain boundary (GB) migration stands as a linchpin process governing microstructural evolution in polycrystalline materials. Over the past decade, the concept of shear coupling, quantified through the shear coupling factor, has transformed our understanding and driven the development of theoretical frameworks for unifying GB behaviors. In this study, we unveil a critical shortcoming in the definit…
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Grain boundary (GB) migration stands as a linchpin process governing microstructural evolution in polycrystalline materials. Over the past decade, the concept of shear coupling, quantified through the shear coupling factor, has transformed our understanding and driven the development of theoretical frameworks for unifying GB behaviors. In this study, we unveil a critical shortcoming in the definition of shear coupling factor and introduce a mathematically redefined descriptor - shear coupling strength - along with its corresponding tensor. This innovation accurately characterizes intrinsic shear coupling properties across diverse GBs and reveals complex dynamics within the GB mobility tensor, with a mathematical proof affirming its symmetry that is assumed in previous studies. Additionally, an efficient methodology has been developed for streamlined extraction of both shear coupling and GB mobility tensors from atomistic simulations. This advancement holds the potential to sample GB behavior across extensive datasets, significantly enhancing our ability to predict structure-property relationships within the expansive 5-parameter space of GBs.
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Submitted 9 December, 2023;
originally announced December 2023.
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Unraveling the role of disorderness in superconducting materials on qubit coherence
Authors:
Ran Gao,
Feng Wu,
Hantao Sun,
Jianjun Chen,
Hao Deng,
Xizheng Ma,
Xiaohe Miao,
Zhijun Song,
Xin Wan,
Fei Wang,
Tian Xia,
Make Ying,
Chao Zhang,
Yaoyun Shi,
Hui-Hai Zhao,
Chunqing Deng
Abstract:
Introducing disorderness in the superconducting materials has been considered promising to enhance the electromagnetic impedance and realize noise-resilient superconducting qubits. Despite a number of pioneering implementations, the understanding of the correlation between the material disorderness and the qubit coherence is still developing. Here, we demonstrate the first and a systematic charact…
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Introducing disorderness in the superconducting materials has been considered promising to enhance the electromagnetic impedance and realize noise-resilient superconducting qubits. Despite a number of pioneering implementations, the understanding of the correlation between the material disorderness and the qubit coherence is still developing. Here, we demonstrate the first and a systematic characterization of fluxonium qubits with the superinductors made from titanium-aluminum-nitride with varied disorderness. From qubit noise spectroscopy, the flux noise and the dielectric loss are extracted as a measure of the coherence properties. Our results reveal that the $1/f$ flux noise dominates the qubit decoherence around the flux-frustration point, strongly correlated with the material disorderness; while the dielectric loss remains low under a wide range of material properties. From the flux-noise amplitudes, the areal density ($σ$) of the phenomenological spin defects and material disorderness are found to be approximately correlated by $σ\propto ρ_{xx}^3$, or effectively $(k_F l)^{-3}$. This work has provided new insights on the origin of decoherence channels within superconductors, and could serve as a useful guideline for material design and optimization.
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Submitted 22 November, 2023; v1 submitted 10 October, 2023;
originally announced October 2023.
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Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates
Authors:
Zuojian Pan,
Zhizhong Chen,
Yiyong Chen,
Haodong Zhang,
Han Yang,
Jingxin Nie,
Chuhan Deng,
Boyan Dong,
Daqi Wang,
Yuchen Li,
Weihua Chen,
Fei Jiao,
Xiangning Kang,
Chuanyu Jia,
Zhiwen Liang,
Qi Wang,
Guoyi Zhang,
Bo Shen
Abstract:
Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial growth process of GaN on these two NLs is comparably investigated by a series of growth interruptions. The coalescence process of GaN grains is modulated by adj…
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Two types of nucleation layers (NLs), including in-situ low-temperature grown GaN (LT-GaN) and ex-situ sputtered physical vapor deposition AlN (PVD-AlN), are applied on cone-shaped nanoscale patterned sapphire substrate (NPSS). The initial growth process of GaN on these two NLs is comparably investigated by a series of growth interruptions. The coalescence process of GaN grains is modulated by adjusting the three-dimensional (3D) temperatures. The results indicate that higher 3D temperatures reduce the edge dislocation density while increasing the residual compressive stress in GaN films. Compared to the LT-GaN NLs, the PVD-AlN NLs effectively resist Ostwald ripening and facilitate the uniform growth of GaN grains on NPSS. Furthermore, GaN films grown on NPSS with PVD-AlN NLs exhibit a reduction of over 50% in both screw and edge dislocation densities compared to those grown on LT-GaN NLs. Additionally, PVD-AlN NLs result in an increase of about 0.5 GPa in the residual compressive stress observed in GaN films.
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Submitted 21 August, 2023;
originally announced August 2023.
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Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects
Authors:
Z. Pan,
Z. Chen,
H. Zhang,
H. Yang,
Y. Chen,
J. Nie,
C. Deng,
B. Dong,
D. Wang,
Y. Li,
H. Lin,
W. Chen,
F. Jiao,
X. Kang,
C. Jia,
Z. Liang,
Q. Wang,
G. Zhang,
B. Shen
Abstract:
Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the past. In this research, trench defects are innovatively modulated into the structure to enhance the efficiency of red InGaN LEDs. Specifically, dual-color MQWs structures are grown with green MQWs at the bottom and red M…
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Trench defects in multi-quantum wells (MQWs) have been considered as flawed structures that severely degrade the internal quantum efficiency of light-emitting diodes (LEDs) in the past. In this research, trench defects are innovatively modulated into the structure to enhance the efficiency of red InGaN LEDs. Specifically, dual-color MQWs structures are grown with green MQWs at the bottom and red MQWs at the top. When high-density trench defects are introduced into the green MQWs, the upper red MQWs exhibit a significant wavelength redshift of 68 nm and approximately 6-fold luminescence enhancement compared to those without trench defects. The wavelength redshift is attributed to the increased indium incorporation due to the strain relaxation effect of trench defects. Moreover, the luminescence enhancement originates from the strong emission of the red MQWs inside trench defects. The mechanisms behind the superior luminescent properties of red MQWs within trench defects are explored in detail. Red InGaN LEDs with an internal quantum efficiency of 16.4% are achieved by modulating the trench defects. The method of achieving InGaN-based red emission by introducing trench defects is simple and reproducible, requiring no additional substrate designs. This research provides a novel pathway toward achieving high-efficiency red InGaN LEDs.
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Submitted 28 December, 2023; v1 submitted 30 July, 2023;
originally announced July 2023.
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Hyperlink prediction via local random walks and Jensen-Shannon divergence
Authors:
Xin-Jian Xu,
Chong Deng,
Li-Jie Zhang
Abstract:
Many real-world systems involving higher-order interactions can be modeled by hypergraphs, where vertices represent the systemic units and hyperedges describe the interactions among them. In this paper, we focus on the problem of hyperlink prediction which aims at inferring missing hyperlinks based on observed hyperlinks. We propose three similarity indices for hyperlink prediction based on local…
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Many real-world systems involving higher-order interactions can be modeled by hypergraphs, where vertices represent the systemic units and hyperedges describe the interactions among them. In this paper, we focus on the problem of hyperlink prediction which aims at inferring missing hyperlinks based on observed hyperlinks. We propose three similarity indices for hyperlink prediction based on local random walks and Jensen-Shannon divergence. Numerical experiments show that the proposed indices outperform the state-of-the-art methods on a broad range of datasets.
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Submitted 27 March, 2023;
originally announced March 2023.
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Unusual acceleration and size effects in grain boundary migration with shear coupling
Authors:
Liang Yang,
Xinyuan Song,
Tingting Yu,
Dahai Liu,
Chuang Deng
Abstract:
Grain boundary (GB) migration plays a crucial role in the thermal and mechanical responses of polycrystalline materials, particularly in ultrafine-grained and nano-grained materials exhibiting grain size-dependent properties. This study investigates the migration behaviors of a set of GBs in Ni through atomistic simulations, employing synthetic driving forces and shear stress. Surprisingly, the di…
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Grain boundary (GB) migration plays a crucial role in the thermal and mechanical responses of polycrystalline materials, particularly in ultrafine-grained and nano-grained materials exhibiting grain size-dependent properties. This study investigates the migration behaviors of a set of GBs in Ni through atomistic simulations, employing synthetic driving forces and shear stress. Surprisingly, the displacements of some shear-coupling GBs do not follow the widely assumed linear or approximately linear relation with time; instead, they exhibit a noticeable acceleration tendency. Furthermore, as the bicrystal size perpendicular to the GB plane increases, the boundary velocity significantly decreases. These observations are independent of the magnitude and type of driving force but are closely linked to temperature, unique to shear-coupling GBs that display a rise in the kinetic energy component along the shear direction. By adopting a specific boundary condition, the acceleration in migration and size effect can be largely alleviated. However, the continuous rise in kinetic energy persists, leading to the true driving force for GB migration being lower than the applied value. To address this, we propose a technique to extract the true driving force based on a quantitative analysis of the work-energy relation in the bicrystal system. The calculated true mobility reveals that the recently proposed mobility tensor may not be symmetric at relatively large driving forces. These discoveries advance our understanding of GB migration and offer a scheme to extract the true mobility, crucial for meso- and continuum-scale simulations of GB migration-related phenomena such as crack propagation, recrystallization, and grain growth.
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Submitted 4 April, 2024; v1 submitted 1 January, 2023;
originally announced January 2023.
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Computing the intrinsic grain boundary mobility tensor
Authors:
Xinyuan Song,
Liang Yang,
Chuang Deng
Abstract:
Grain boundary (GB) mobility has been conventionally computed as a single value; however, a recent study has suggested that GB mobility should be expressed as a tensor. In this work, by using atomistic simulations, the concept of GB mobility being applied to the shear direction was re-examined and it is found that it follows the same physical rule as the conventionally defined GB mobility based on…
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Grain boundary (GB) mobility has been conventionally computed as a single value; however, a recent study has suggested that GB mobility should be expressed as a tensor. In this work, by using atomistic simulations, the concept of GB mobility being applied to the shear direction was re-examined and it is found that it follows the same physical rule as the conventionally defined GB mobility based on the normal direction. The interface random walk method was then used to compute the intrinsic GB mobility tensor at the zero-driving force limit. In order to compute the off-diagonal elements of the intrinsic GB mobility tensor, a shear coupling strength S is introduced in this study, which we believe can better reflect the intrinsic characteristics of a GB for its coupling trend between the normal and shear motion than the widely used shear coupling factor. Furthermore, the effect of temperature and external driving force on the GB mobility tensor, especially on its symmetry, was systematically investigated. It is shown that the GB mobility in either the normal or shear direction can show a non-Arrhenius type dependence on the applied driving force, which is similar to the widely reported non-Arrhenius (or anti-thermal) dependence of GB mobility on temperature. Accordingly, the classical GB migration equation was adapted to describe the diverse variation of GB mobility due to changes in both temperature and driving force.
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Submitted 21 December, 2022;
originally announced December 2022.
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Driving force induced transition in thermal behavior of grain boundary migration in Ni
Authors:
Xinyuan Song,
Chuang Deng
Abstract:
Grain boundary (GB) migration exhibits intriguing anti-thermal behavior (or non-Arrhenius behavior), with the temperature and driving force playing crucial roles. Through atomistic simulations on nickel bicrystals, we investigate the change in GB mobility with variations in both temperature and driving force. Our results reveal that the GB mobility initially increases with temperature and subseque…
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Grain boundary (GB) migration exhibits intriguing anti-thermal behavior (or non-Arrhenius behavior), with the temperature and driving force playing crucial roles. Through atomistic simulations on nickel bicrystals, we investigate the change in GB mobility with variations in both temperature and driving force. Our results reveal that the GB mobility initially increases with temperature and subsequently decreases after reaching the transition temperature (Ttrans), and, notably, Ttrans exhibits a linear relationship with the activation energy (Q) associated with GB migration. By modulating the driving force, we found that the driving force could effectively lower Q, resulting in the shift of Ttrans towards lower temperatures. Additionally, higher driving forces were found to activate more migration modes at lower temperatures, potentially leading to a transition in the thermal behavior of GB migration. Our work supports the existing theoretical models for GB migration based on both classical thermal activation and disconnection nucleation. Furthermore, we refined the existing model by incorporating the influence of the driving force. The modified model can not only describe the effect of driving force on the thermal behavior of GB migration but also accounts for the observed "anti-driving force" phenomenon in GB migration. Our research has the potential to offer valuable insights for investigating realistic GB migration under more intricate constraints and environments.
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Submitted 14 September, 2023; v1 submitted 17 August, 2022;
originally announced August 2022.
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Simulating Chern insulators on a superconducting quantum processor
Authors:
Zhong-Cheng Xiang,
Kaixuan Huang,
Yu-Ran Zhang,
Tao Liu,
Yun-Hao Shi,
Cheng-Lin Deng,
Tong Liu,
Hao Li,
Gui-Han Liang,
Zheng-Yang Mei,
Haifeng Yu,
Guangming Xue,
Ye Tian,
Xiaohui Song,
Zhi-Bo Liu,
Kai Xu,
Dongning Zheng,
Franco Nori,
Heng Fan
Abstract:
The quantum Hall effect, fundamental in modern condensed matter physics, continuously inspires new theories and predicts emergent phases of matter. Here we experimentally demonstrate three types of Chern insulators with synthetic dimensions on a programable 30-qubit-ladder superconducting processor. We directly measure the band structures of the 2D Chern insulator along synthetic dimensions with v…
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The quantum Hall effect, fundamental in modern condensed matter physics, continuously inspires new theories and predicts emergent phases of matter. Here we experimentally demonstrate three types of Chern insulators with synthetic dimensions on a programable 30-qubit-ladder superconducting processor. We directly measure the band structures of the 2D Chern insulator along synthetic dimensions with various configurations of Aubry-André-Harper chains and observe dynamical localisation of edge excitations. With these two signatures of topology, our experiments implement the bulk-edge correspondence in the synthetic 2D Chern insulator. Moreover, we simulate two different bilayer Chern insulators on the ladder-type superconducting processor. With the same and opposite periodically modulated on-site potentials for two coupled chains, we simulate topologically nontrivial edge states with zero Hall conductivity and a Chern insulator with higher Chern numbers, respectively. Our work shows the potential of using superconducting qubits for investigating different intriguing topological phases of quantum matter.
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Submitted 7 September, 2023; v1 submitted 24 July, 2022;
originally announced July 2022.
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Titanium Nitride Film on Sapphire Substrate with Low Dielectric Loss for Superconducting Qubits
Authors:
Hao Deng,
Zhijun Song,
Ran Gao,
Tian Xia,
Feng Bao,
Xun Jiang,
Hsiang-Sheng Ku,
Zhisheng Li,
Xizheng Ma,
Jin Qin,
Hantao Sun,
Chengchun Tang,
Tenghui Wang,
Feng Wu,
Wenlong Yu,
Gengyan Zhang,
Xiaohang Zhang,
Jingwei Zhou,
Xing Zhu,
Yaoyun Shi,
Hui-Hai Zhao,
Chunqing Deng
Abstract:
Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride…
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Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride (TiN) film and sapphire substrate has good potential because of its chemical stability against oxidization, and high quality at interfaces. In this work, we report a TiN film deposited onto sapphire substrate achieving low dielectric loss at the material interface. Through the systematic characterizations of a series of transmon qubits fabricated with identical batches of TiN base layers, but different geometries of qubit shunting capacitors with various participation ratios of the material interface, we quantitatively extract the loss tangent value at the substrate-metal interface smaller than $8.9 \times 10^{-4}$ in 1-nm disordered layer. By optimizing the interface participation ratio of the transmon qubit, we reproducibly achieve qubit lifetimes of up to 300 $μ$s and quality factors approaching 8 million. We demonstrate that TiN film on sapphire substrate is an ideal material system for high-coherence superconducting qubits. Our analyses further suggest that the interface dielectric loss around the Josephson junction part of the circuit could be the dominant limitation of lifetimes for state-of-the-art transmon qubits.
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Submitted 6 May, 2022;
originally announced May 2022.
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Ultrahigh-inductance materials from spinodal decomposition
Authors:
Ran Gao,
Hsiang-Sheng Ku,
Hao Deng,
Wenlong Yu,
Tian Xia,
Feng Wu,
Zhijun Song,
Xiaohe Miao,
Chao Zhang,
Yue Lin,
Yaoyun Shi,
Hui-Hai Zhao,
Chunqing Deng
Abstract:
Disordered superconducting nitrides with kinetic inductance have long been considered a leading material candidate for high-inductance quantum-circuit applications. Despite continuing efforts in reducing material dimensions to increase the kinetic inductance and the corresponding circuit impedance, it becomes a fundamental challenge to improve further without compromising material qualities. To th…
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Disordered superconducting nitrides with kinetic inductance have long been considered a leading material candidate for high-inductance quantum-circuit applications. Despite continuing efforts in reducing material dimensions to increase the kinetic inductance and the corresponding circuit impedance, it becomes a fundamental challenge to improve further without compromising material qualities. To this end, we propose a method to drastically increase the kinetic inductance of superconducting materials via spinodal decomposition while keeping a low microwave loss. We use epitaxial Ti\textsubscript{0.48}Al\textsubscript{0.52}N as a model system, and for the first time demonstrate the utilization of spinodal decomposition to trigger the insulator-to-superconductor transition with a drastically enhanced material disorder. The measured kinetic inductance has increased by 2-3 orders of magnitude compared with all the best reported disordered superconducting nitrides. Our work paves the way for substantially enhancing and deterministically controlling the inductance for advanced superconducting quantum circuits.
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Submitted 22 November, 2023; v1 submitted 9 November, 2021;
originally announced November 2021.
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Epitaxial titanium nitride microwave resonators: Structural, chemical, electrical, and microwave properties
Authors:
Ran Gao,
Wenlong Yu,
Hao Deng,
Hsiang-Sheng Ku,
Zhisheng Li,
Minghua Wang,
Xiaohe Miao,
Yue Lin,
Chunqing Deng
Abstract:
Titanium nitride is an attractive material for a range of superconducting quantum-circuit applications owing to its low microwave losses, high surface inductance, and chemical stability. The physical properties and device performance, nevertheless, depend strongly on the quality of the materials. Here we focus on the highly crystalline and epitaxial titanium nitride thin films deposited on sapphir…
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Titanium nitride is an attractive material for a range of superconducting quantum-circuit applications owing to its low microwave losses, high surface inductance, and chemical stability. The physical properties and device performance, nevertheless, depend strongly on the quality of the materials. Here we focus on the highly crystalline and epitaxial titanium nitride thin films deposited on sapphire substrates using magnetron sputtering at an intermediate temperature (300$^{\circ}$C). We perform a set of systematic and comprehensive material characterization to thoroughly understand the structural, chemical, and transport properties. Microwave losses at low temperatures are studied using patterned microwave resonators, where the best internal quality factor in the single-photon regime is measured to be $3.3\times 10^6$, and $> 1.0\times 10^7$ in the high-power regime. Adjusted with the material filling factor of the resonators, the microwave loss-tangent here compares well with the previously reported best values for superconducting resonators. This work lays the foundation of using epitaxial titanium nitride for low-loss superconducting quantum circuits.
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Submitted 22 November, 2023; v1 submitted 7 November, 2021;
originally announced November 2021.
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A Minimal Physics-Based Model on the Electrochemical Impedance Spectroscopy of Solid-State Electrolyte
Authors:
Changyu Deng,
Wei Lu
Abstract:
Solid state batteries have emerged as a potential next-generation energy storage device due to safety and energy density advantages. Development of electrolyte is one of the most important topics in solid state batteries. Electrochemical Impedance Spectroscopy (EIS) is a popular measurement technique to obtain the conductivity and diagnose the electrolyte. Current interpretation mainly uses the se…
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Solid state batteries have emerged as a potential next-generation energy storage device due to safety and energy density advantages. Development of electrolyte is one of the most important topics in solid state batteries. Electrochemical Impedance Spectroscopy (EIS) is a popular measurement technique to obtain the conductivity and diagnose the electrolyte. Current interpretation mainly uses the semicircle part of the curves and discards other information revealed by EIS such as the slope of the curve at low frequency. What is worse, some features on the curve are not fully interpreted. To better understand the transport mechanism and interpret EIS curves, we introduce a continuous model to quantify the ion transport and current flow in the electrolyte. The produced EIS curves from the model are compared with experiment data to show good agreement.
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Submitted 1 October, 2021;
originally announced October 2021.
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Reduction of interfacial thermal resistance of overlapped graphene by bonding carbon chains
Authors:
Yuwen Huang,
Wentao Feng,
Xiaoxiang Yu,
Chengcheng Deng,
Nuo Yang
Abstract:
Exploring the mechanism of interfacial thermal transport and reducing the interfacial thermal resistance is of great importance for thermal management and modulation. Herein, the interfacial thermal resistance between overlapped graphene nanoribbons is largely reduced by adding bonded carbon chains by performing molecular dynamics simulations. And the analytical model (cross-interface model, CIM)…
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Exploring the mechanism of interfacial thermal transport and reducing the interfacial thermal resistance is of great importance for thermal management and modulation. Herein, the interfacial thermal resistance between overlapped graphene nanoribbons is largely reduced by adding bonded carbon chains by performing molecular dynamics simulations. And the analytical model (cross-interface model, CIM) is utilized to analyze and explain the two-dimensional thermal transport mechanism at cross-interface. An order of magnitude reduction in interfacial thermal resistance is found as the graphene nanoribbons are bonded by just one carbon chain. Interestingly, the decreasing rate of interfacial thermal resistance slows down gradually with the increasing of the number of carbon chains, which can be explained by the proposed theoretical relationship based on CIM. Moreover, by the comparison of CIM and traditional simplified model, the accuracy of CIM is verified and demonstrated in overlapped graphene nanoribbons. This work provides a new way to improve the interfacial thermal transport and reveal the essential mechanism for low-dimensional materials applied in thermal management.
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Submitted 1 November, 2020;
originally announced November 2020.
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A Facile Process to Fabricate Phosphorus/Carbon Xerogel Composite as Anode for Sodium Ion Batteries
Authors:
Changyu Deng,
Wei Lu
Abstract:
Sodium ion batteries become popular due to their low cost. Among possible anode materials of sodium ion batteries, phosphorus has great potential owing to its high theoretical capacity. Previous research that yielded high capacity and long duration of phosphorus anode used expensive materials such as black phosphorus (BP) and phosphorene. To take advantage of the low cost of sodium ion batteries,…
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Sodium ion batteries become popular due to their low cost. Among possible anode materials of sodium ion batteries, phosphorus has great potential owing to its high theoretical capacity. Previous research that yielded high capacity and long duration of phosphorus anode used expensive materials such as black phosphorus (BP) and phosphorene. To take advantage of the low cost of sodium ion batteries, we report a simple and low-cost method to fabricate anode: condensing red phosphorus on carbon xerogel. Even with large particle size (~ 50 $μ$m) and high mass loading (2 mg cm$^{-2}$), the composite cycled at 100 mA g$^{-1}$ yielded a capacity of 357 mA g$^{-1}$ or 2498 mAh g$^{-1}_P$ based on phosphorus after subtracting the contribution of carbon. The average coulombic efficiency is as high as 99.4%. When cycled at 200 mA g$^{-1}$, it yielded a capacity of 242 mAh g$^{-1}$ or 1723 mAh g$^{-1}_P$, with average degradation rate only 0.06% in 80 cycles. Our research provided an innovative approach to synthesize anodes for sodium ion batteries at extremely low cost, with performance exceeding or comparable to state-of-the-art materials, which will promote their commercialization.
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Submitted 18 August, 2021; v1 submitted 28 September, 2020;
originally announced September 2020.
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Fabrication of BaZrS3 chalcogenide perovskite thin films for optoelectronics
Authors:
Xiucheng Wei,
Haolei Hui,
Chuan Zhao,
Chenhua Deng,
Mengjiao Han,
Zhonghai Yu,
Aaron Sheng,
Pinku Roy,
Aiping Chen,
Junhao Lin,
David F. Watson,
Yiyang Sun,
Tim Thomay,
Sen Yang,
Quanxi Jia,
Shengbai Zhang,
Hao Zeng
Abstract:
BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we repo…
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BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10^19-10^20 cm^-3. Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm^2/Vs. The absorption coefficient is > 10^5 cm-1 at photon energy > 1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. These results assure that BaZrS3 is a promising candidate for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.
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Submitted 19 November, 2019; v1 submitted 11 October, 2019;
originally announced October 2019.
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Cross interface model for the thermal transport across interface between overlapped boron nitride nanoribbons
Authors:
Wentao Feng,
Xiaoxiang Yu,
Yue Wang,
Dengke Ma,
Zhijia Sun,
Chengcheng Deng,
Nuo Yang
Abstract:
The application of low-dimensional materials for heat dissipation requires a comprehensive understanding of the thermal transport at the cross interface, which widely exists in various composite materials and electronic devices. In this work, we proposed an analytical model, named as cross interface model (CIM), to accurately reveal the essential mechanism of the two-dimensional thermal transport…
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The application of low-dimensional materials for heat dissipation requires a comprehensive understanding of the thermal transport at the cross interface, which widely exists in various composite materials and electronic devices. In this work, we proposed an analytical model, named as cross interface model (CIM), to accurately reveal the essential mechanism of the two-dimensional thermal transport at the cross interface. The applicability of CIM is validated through the comparison of the analytical results with molecular dynamics simulations for a typical cross interface of two overlapped boron nitride nanoribbons. Besides, it is figured out that the factor (η) has important influence on the thermal transport besides the thermal resistance inside and between the materials, which is found to be determined by two dimensionless parameters from its expression. Our investigations deepen the understanding of the thermal transport at the cross interface and also facilitate to guide the applications of low-dimensional materials in thermal management.
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Submitted 24 June, 2019;
originally announced June 2019.
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Demonstration of nonstoquastic Hamiltonian in coupled superconducting flux qubits
Authors:
I. Ozfidan,
C. Deng,
A. Y. Smirnov,
T. Lanting,
R. Harris,
L. Swenson,
J. Whittaker,
F. Altomare,
M. Babcock,
C. Baron,
A. J. Berkley,
K. Boothby,
H. Christiani,
P. Bunyk,
C. Enderud,
B. Evert,
M. Hager,
A. Hajda,
J. Hilton,
S. Huang,
E. Hoskinson,
M. W. Johnson,
K. Jooya,
E. Ladizinsky,
N. Ladizinsky
, et al. (23 additional authors not shown)
Abstract:
Quantum annealing (QA) is a heuristic algorithm for finding low-energy configurations of a system, with applications in optimization, machine learning, and quantum simulation. Up to now, all implementations of QA have been limited to qubits coupled via a single degree of freedom. This gives rise to a stoquastic Hamiltonian that has no sign problem in quantum Monte Carlo (QMC) simulations. In this…
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Quantum annealing (QA) is a heuristic algorithm for finding low-energy configurations of a system, with applications in optimization, machine learning, and quantum simulation. Up to now, all implementations of QA have been limited to qubits coupled via a single degree of freedom. This gives rise to a stoquastic Hamiltonian that has no sign problem in quantum Monte Carlo (QMC) simulations. In this paper, we report implementation and measurements of two superconducting flux qubits coupled via two canonically conjugate degrees of freedom (charge and flux) to achieve a nonstoquastic Hamiltonian. Such coupling can enhance performance of QA processors, extend the range of quantum simulations. We perform microwave spectroscopy to extract circuit parameters and show that the charge coupling manifests itself as a YY interaction in the computational basis. We observe destructive interference in quantum coherent oscillations between the computational basis states of the two-qubit system. Finally, we show that the extracted Hamiltonian is nonstoquastic over a wide range of parameters.
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Submitted 8 November, 2019; v1 submitted 14 March, 2019;
originally announced March 2019.
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Materials discovery and properties prediction in thermal transport via materials informatics: a mini-review
Authors:
Xiao Wan,
Wentao Feng,
Yunpeng Wang,
Chengcheng Deng,
Nuo Yang
Abstract:
There has been an increasing demand for materials with special thermal properties, whereas experimental discovery is high-cost and time-consuming. The emerging discipline `Materials Informatics' is an effective approach that can accelerate materials development by combining material science and big data technique. Recently materials informatics has been applied to the design of novel materials suc…
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There has been an increasing demand for materials with special thermal properties, whereas experimental discovery is high-cost and time-consuming. The emerging discipline `Materials Informatics' is an effective approach that can accelerate materials development by combining material science and big data technique. Recently materials informatics has been applied to the design of novel materials such as thermal interface materials for heat-dissipation, and thermoelectric materials for power generation. This mini-review summarized the research progress on the applications of materials informatics for the thermal transport properties prediction and discovery of materials with special thermal properties, including optimal thermal conductivity, interfacial thermal conductance and thermoelectricity efficiency. In addition, some perspectives are given for the outlook of materials informatics in the field of thermal transport.
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Submitted 14 January, 2019;
originally announced January 2019.
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How Does van der Waals Confinement Enhance Phonon Transport?
Authors:
Xiaoxiang Yu,
Dengke Ma,
Chengcheng Deng,
Xiao Wan,
Meng An,
Han Meng,
Xiaobo Li,
Xiaoming Huang,
Nuo Yang
Abstract:
The van der Waals (vdW) interactions exist in reality universally and play an important role in physics. Here, we show the study on the mechanism of vdW interactions on phonon transport in atomic scale, which would boost developments in heat management and energy conversion. Commonly, the vdW interactions are regarded as a hindrance in phonon transport. Here, we propose that the vdW confinement wi…
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The van der Waals (vdW) interactions exist in reality universally and play an important role in physics. Here, we show the study on the mechanism of vdW interactions on phonon transport in atomic scale, which would boost developments in heat management and energy conversion. Commonly, the vdW interactions are regarded as a hindrance in phonon transport. Here, we propose that the vdW confinement will enhance phonon transport. Through molecular dynamics simulations, it shows that the vdW confinement makes more than two-fold enhancement on thermal conductivity of both polyethylene single chain and graphene nanoribbon. The quantitative analyses of morphology, local vdW potential energy and dynamical properties are carried out to reveal the underlying physical mechanism. It is found that the confined vdW potential barriers reduce the atomic thermal displacement magnitudes, thus lead to less phonon scattering and facilitate thermal transport. Our study offers a new strategy to modulate the heat transport.
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Submitted 9 October, 2018;
originally announced October 2018.
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Controlled Layer-by-Layer Oxidation of MoTe2 via O3 Exposure
Authors:
Xiaoming Zheng,
Yuehua Wei,
Chuyun Deng,
Han Huang,
Yayun Yu,
Guang Wang,
Gang Peng,
Zhihong Zhu,
Yi Zhang,
Tian Jiang,
Shiqiao Qin,
Renyan Zhang,
Xueao Zhang
Abstract:
Growing uniform oxides with various thickness on TMDs is one of the biggest challenges to integrate TMDs into complementary metal oxide semiconductor (CMOS) logic circuits. Here, we report a layer-by-layer oxidation of atomically thin MoTe2 flakes via ozone (O3) exposure. The thickness of MoOx oxide film could be tuning with atomic-level accuracy simply by varying O3 exposure time. Additionally, M…
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Growing uniform oxides with various thickness on TMDs is one of the biggest challenges to integrate TMDs into complementary metal oxide semiconductor (CMOS) logic circuits. Here, we report a layer-by-layer oxidation of atomically thin MoTe2 flakes via ozone (O3) exposure. The thickness of MoOx oxide film could be tuning with atomic-level accuracy simply by varying O3 exposure time. Additionally, MoOx-covered MoTe2 shows a hole-dominated transport behavior. Our findings point to a simple and effective strategy for growing homogenous surface oxide film on MoTe2, which is promising for several purposes in metal-oxide-semiconductor transistor, ranging from surface passivation to dielectric layers.
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Submitted 1 September, 2018;
originally announced September 2018.
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Weak doping dependence of the antiferromagnetic coupling between nearest-neighbor Mn$^{2+}$ spins in (Ba$_{1-x}$K$_x$)(Zn$_{1-y}$Mn$_y$)$_2$As$_2$
Authors:
M. A. Surmach,
B. J. Chen Z. Deng,
C. Q. Jin,
J. K. Glasbrenner,
I. I. Mazin,
A. Ivanov,
D. S. Inosov
Abstract:
Dilute magnetic semiconductors (DMS) are nonmagnetic semiconductors doped with magnetic transition metals. The recently discovered DMS material (Ba$_{1-x}$K$_{x}$)(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ offers a unique and versatile control of the Curie temperature, $T_{\mathrm{C}}$, by decoupling the spin (Mn$^{2+}$, $S=5/2$) and charge (K$^{+}$) doping in different crystallographic layers. In an atte…
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Dilute magnetic semiconductors (DMS) are nonmagnetic semiconductors doped with magnetic transition metals. The recently discovered DMS material (Ba$_{1-x}$K$_{x}$)(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ offers a unique and versatile control of the Curie temperature, $T_{\mathrm{C}}$, by decoupling the spin (Mn$^{2+}$, $S=5/2$) and charge (K$^{+}$) doping in different crystallographic layers. In an attempt to describe from first-principles calculations the role of hole doping in stabilizing ferromagnetic order, it was recently suggested that the antiferromagnetic exchange coupling $J$ between the nearest-neighbor Mn ions would experience a nearly twofold suppression upon doping 20\% of holes by potassium substitution. At the same time, further-neighbor interactions become increasingly ferromagnetic upon doping, leading to a rapid increase of $T_{\mathrm{C}}$. Using inelastic neutron scattering, we have observed a localized magnetic excitation at about 13 meV, associated with the destruction of the nearest-neighbor Mn-Mn singlet ground state. Hole doping results in a notable broadening of this peak, evidencing significant particle-hole damping, but with only a minor change in the peak position. We argue that this unexpected result can be explained by a combined effect of superexchange and double-exchange interactions.
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Submitted 8 February, 2018;
originally announced February 2018.
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Dark-like states for the multi-qubit and multi-photon Rabi models
Authors:
Jie Peng,
Chenxiong zheng,
Guangjie Guo,
Xiaoyong Guo,
Xin Zhang,
Chaosheng Deng,
Guoxing Ju,
Zhongzhou Ren,
Lucas Lamata,
Enrique Solano
Abstract:
There are well-known dark states in the even-qubit Dicke models, which are the products of the two-qubit singlets and a Fock state, where the qubits are decoupled from the photon field. These spin singlets can be used to store quantum correlations since they preserve entanglement even under dissipation, driving and dipole-dipole interactions. One of the features for these dark states is that their…
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There are well-known dark states in the even-qubit Dicke models, which are the products of the two-qubit singlets and a Fock state, where the qubits are decoupled from the photon field. These spin singlets can be used to store quantum correlations since they preserve entanglement even under dissipation, driving and dipole-dipole interactions. One of the features for these dark states is that their eigenenergies are independent of the qubitphoton coupling strength. We have obtained a novel kind of dark-like states for the multi-qubit and multi-photon Rabi models, whose eigenenergies are also constant in the whole coupling regime. Unlike the dark states, the qubits and photon field are coupled in the dark-like states. Furthermore, the photon numbers are bounded from above commonly at 1, which is different from that for the one-qubit case. The existence conditions of the dark-like states are simpler than exact isolated solutions, and may be fine tuned in experiments. While the single-qubit and multi-photon Rabi model is well-defined only if the photon number $M\leq2$ and the coupling strength is below a certain critical value, the dark-like eigenstates for multi-qubit and multiphoton Rabi model still exist, regardless of these constraints. In view of these properties of the dark-like states, they may find similar applications like "dark states" in quantum information.
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Submitted 17 October, 2016; v1 submitted 16 October, 2016;
originally announced October 2016.
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Chalcogenide Perovskites- an Emerging Class of Ionic Semiconductors
Authors:
Samanthe Pereraa,
Haolei Huia,
Chuan Zhao,
Hongtao Xue,
Fan Sun,
Chenhua Deng,
Nelson Gross,
Chris Milleville,
Xiaohong Xu,
David F. Watson,
Bernard Weinstein,
Yi-Yang Sun,
Shengbai Zhang,
Hao Zeng
Abstract:
We report the synthesis and characterization of a novel class of ionic semiconductor materials- inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements co…
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We report the synthesis and characterization of a novel class of ionic semiconductor materials- inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.
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Submitted 16 October, 2016;
originally announced October 2016.
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Enhancement of interfacial thermal conductance of SiC by overlapped carbon nanotubes and intertube atoms
Authors:
Chengcheng Deng,
Xiaoxiang Yu,
Xiaoming Huang,
Nuo Yang
Abstract:
We proposed a new way, adding intertube atoms, to enhance interfacial thermal conductance (ITC) between SiC-carbon nanotube (CNT) array structure. Non-equilibrium molecular dynamics method was used to study the ITC. The results show that the intertube atoms can significantly enhance the ITC. The dependence of ITC on both the temperature and the number of intertube atoms are shown. The mechanism is…
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We proposed a new way, adding intertube atoms, to enhance interfacial thermal conductance (ITC) between SiC-carbon nanotube (CNT) array structure. Non-equilibrium molecular dynamics method was used to study the ITC. The results show that the intertube atoms can significantly enhance the ITC. The dependence of ITC on both the temperature and the number of intertube atoms are shown. The mechanism is analyzed by calculating probability distributions of atomic forces and vibrational density of states. Our study may provide some guidance on enhancing the ITC of CNT-based composites.
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Submitted 9 June, 2016;
originally announced June 2016.
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Enhancing thermal conductivity of bulk polyethylene along two directions by paved crosswise laminate
Authors:
Xiaoxiang Yu,
Chengcheng Deng,
Xiaoming Huang,
Nuo Yang
Abstract:
Recently, some reports show that the ultra-low thermal conductivity of bulk polymers can be enhanced along one direction, which limits its applications. Here, we proposed paved crosswise laminate methods which can enhance the thermal conductivity of bulk polyethylene (PE) along two directions. We find that the thermal conductivity of paved crosswise polyethylene laminate (PPEL) reaches as high as…
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Recently, some reports show that the ultra-low thermal conductivity of bulk polymers can be enhanced along one direction, which limits its applications. Here, we proposed paved crosswise laminate methods which can enhance the thermal conductivity of bulk polyethylene (PE) along two directions. We find that the thermal conductivity of paved crosswise polyethylene laminate (PPEL) reaches as high as 181 W/m-K along two in-plane directions, which is three orders of magnitude larger than bulk amorphous polyethylene and even more than two times larger than PE single chain (54 W/m-K). The analyses of mechanism indicated that PPEL is a much more crystal-like structure due to the inter-chain van der Waals interactions. Our study may provide guides on the design and fabrication of polymer structures with high thermal conductivity.
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Submitted 5 May, 2016;
originally announced May 2016.
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Observation of Floquet states in a strongly driven artificial atom
Authors:
Chunqing Deng,
Jean-Luc Orgiazzi,
Feiruo Shen,
Sahel Ashhab,
Adrian Lupascu
Abstract:
We present experiments on the driven dynamics of a two-level superconducting artificial atom. The driving strength reaches 4.78 GHz, significantly exceeding the transition frequency of 2.288 GHz. The observed dynamics is described in terms of quasienergies and quasienergy states, in agreement with Floquet theory. In addition, we observe the role of pulse shaping in the dynamics, as determined by n…
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We present experiments on the driven dynamics of a two-level superconducting artificial atom. The driving strength reaches 4.78 GHz, significantly exceeding the transition frequency of 2.288 GHz. The observed dynamics is described in terms of quasienergies and quasienergy states, in agreement with Floquet theory. In addition, we observe the role of pulse shaping in the dynamics, as determined by non-adiabatic transitions between Floquet states, and we implement subnanosecond single-qubit operations. These results pave the way to quantum control using strong driving with applications in quantum technologies.
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Submitted 8 October, 2015; v1 submitted 26 August, 2015;
originally announced August 2015.
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Extremely High Thermal Conductivity of Aligned Bulk Carbon Nanotube-Polyethylene Composites
Authors:
Quanwen Liao,
Zhichun Liu,
Wei Liu,
Chengcheng Deng,
Nuo Yang
Abstract:
The poor thermal conductivity of bulk polymers may be enhanced by combining them with high thermal conductivity materials such as carbon nanotubes. Different from random doping, we find that the aligned carbon nanotube-polyethylene composites (ACPCs) has a high thermal conductivity by non-equilibrium molecular dynamics simulations. The analyses indicate that the aligned structure can not only take…
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The poor thermal conductivity of bulk polymers may be enhanced by combining them with high thermal conductivity materials such as carbon nanotubes. Different from random doping, we find that the aligned carbon nanotube-polyethylene composites (ACPCs) has a high thermal conductivity by non-equilibrium molecular dynamics simulations. The analyses indicate that the aligned structure can not only take advantage of the high thermal conduction of carbon nanotubes, but enhance thermal conduction of polyethylene (PE) chains. Our predictions may inspire manufacturing aligned polymer-based composites for a wide variety of applications.
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Submitted 31 March, 2015;
originally announced March 2015.
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Suspended graphene devices with local gate control on an insulating substrate
Authors:
Florian R. Ong,
Zheng Cui,
Muhammet A. Yurtalan,
Cameron Vojvodin,
Michał Papaj,
Jean-Luc F. X. Orgiazzi,
Chunqing Deng,
Mustafa Bal,
Adrian Lupascu
Abstract:
We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77~K and below, we observe the field-effect modulation of the graphene resistivi…
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We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77~K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials.
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Submitted 18 September, 2015; v1 submitted 13 March, 2015;
originally announced March 2015.
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Analytical controllability of deterministic scale-free networks and Cayley trees
Authors:
Ming Xu,
Chuan-Yun Xu,
Huan Wang,
Cong-Zheng Deng,
Ke-Fei Cao
Abstract:
According to the exact controllability theory, the controllability is investigated analytically for two typical types of self-similar bipartite networks, i.e., the classic deterministic scale-free networks and Cayley trees. Due to their self-similarity, the analytical results of the exact controllability are obtained, and the minimum sets of driver nodes (drivers) are also identified by elementary…
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According to the exact controllability theory, the controllability is investigated analytically for two typical types of self-similar bipartite networks, i.e., the classic deterministic scale-free networks and Cayley trees. Due to their self-similarity, the analytical results of the exact controllability are obtained, and the minimum sets of driver nodes (drivers) are also identified by elementary transformations on adjacency matrices. For these two types of undirected networks, no matter their links are unweighted or (nonzero) weighted, the controllability of networks and the configuration of drivers remain the same, showing a robustness to the link weights. These results have implications for the control of real networked systems with self-similarity.
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Submitted 1 July, 2015; v1 submitted 5 November, 2014;
originally announced November 2014.
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Flux qubits in a planar circuit quantum electrodynamics architecture: quantum control and decoherence
Authors:
J. -L. Orgiazzi,
C. Deng,
D. Layden,
R. Marchildon,
F. Kitapli,
F. Shen,
M. Bal,
F. R. Ong,
A. Lupascu
Abstract:
We report experiments on superconducting flux qubits in a circuit quantum electrodynamics (cQED) setup. Two qubits, independently biased and controlled, are coupled to a coplanar waveguide resonator. Dispersive qubit state readout reaches a maximum contrast of $72\,\%$. We find intrinsic energy relaxation times at the symmetry point of $7\,μ\text{s}$ and $20\,μ\text{s}$ and levels of flux noise of…
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We report experiments on superconducting flux qubits in a circuit quantum electrodynamics (cQED) setup. Two qubits, independently biased and controlled, are coupled to a coplanar waveguide resonator. Dispersive qubit state readout reaches a maximum contrast of $72\,\%$. We find intrinsic energy relaxation times at the symmetry point of $7\,μ\text{s}$ and $20\,μ\text{s}$ and levels of flux noise of $2.6\,μΦ_0/\sqrt{\text{Hz}}$ and $2.7\,μΦ_0/\sqrt{\text{Hz}}$ at 1 Hz for the two qubits. We discuss the origin of decoherence in the measured devices. These results demonstrate the potential of cQED as a platform for fundamental investigations of decoherence and quantum dynamics of flux qubits.
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Submitted 4 July, 2014;
originally announced July 2014.
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Characterization of low-temperature microwave loss of thin aluminum oxide formed by plasma oxidation
Authors:
Chunqing Deng,
Martin Otto,
Adrian Lupascu
Abstract:
We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperatur…
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We report on the characterization of microwave loss of thin aluminum oxide films at low temperatures using superconducting lumped resonators. The oxide films are fabricated using plasma oxidation of aluminum and have a thickness of 5 nm. We measure the dielectric loss versus microwave power for resonators with frequencies in the GHz range at temperatures from 54 to 303 mK. The power and temperature dependence of the loss is consistent with the tunneling two-level system theory. These results are relevant to understanding decoherence in superconducting quantum devices. The obtained oxide films are thin and robust, making them suitable for capacitors in compact microwave resonators.
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Submitted 27 December, 2013;
originally announced December 2013.
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An analysis method for transmission measurements of superconducting resonators with applications to quantum-regime dielectric-loss measurements
Authors:
Chunqing Deng,
Martin Otto,
Adrian Lupascu
Abstract:
Superconducting resonators provide a convenient way to measure loss tangents of various dielectrics at low temperature. For the purpose of examining the microscopic loss mechanisms in dielectrics, precise measurements of the internal quality factor at different values of energy stored in the resonators are required. Here, we present a consistent method to analyze a LC superconducting resonator cou…
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Superconducting resonators provide a convenient way to measure loss tangents of various dielectrics at low temperature. For the purpose of examining the microscopic loss mechanisms in dielectrics, precise measurements of the internal quality factor at different values of energy stored in the resonators are required. Here, we present a consistent method to analyze a LC superconducting resonator coupled to a transmission line. We first derive an approximate expression for the transmission S-parameter $S_{21}$ based on a complete circuit model. In the weak coupling limit, we show that the internal quality factor is reliably determined by fitting the approximate form of $S_{21}$. Since the voltage $V$ of the capacitor of the LC circuit is required to determine the energy stored in the resonator, we next calculate the relation between $V$ and the forward propagating wave voltage $V_{in}^+$. Due to the dependence of the quality factor on voltage, $V$ is not simply proportional to $V_{in}^+$. We find a self-consistent way to determine the relation between $V$ and $V_{in}^+$, which employs only the fitting parameters for $S_{21}$ and a linear scaling factor. We then examine the resonator transmission in the cases of port reflection and impedance mismatch. We find that resonator transmission asymmetry is primarily due to the reflection from discontinuity in transmission lines. We show that our analysis method to extract the internal quality factor is robust in the non-ideal cases above. Finally, we show that the analysis method on LC resonator can be generalize to arbitrary weakly coupled lumped and distributed resonators. The generalization uses a systematic approximation on the response function based on the pole and zero which are the closest to the resonance frequency. This Closest Pole and Zero Method (CPZM) is a valuable tool for analyzing physical measurements of high-Q resonators.
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Submitted 8 August, 2013; v1 submitted 16 April, 2013;
originally announced April 2013.
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Ultrasensitive magnetic field detection using a single artificial atom
Authors:
Mustafa Bal,
Chunqing Deng,
Jean-Luc Orgiazzi,
Florian Ong,
Adrian Lupascu
Abstract:
Efficient detection of magnetic fields is central to many areas of research and has important practical applications ranging from materials science to geomagnetism. High sensitivity detectors are commonly built using direct current-superconducting quantum interference devices (DC-SQUIDs) or atomic systems. Here we use a single artificial atom to implement an ultrahigh sensitivity magnetometer with…
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Efficient detection of magnetic fields is central to many areas of research and has important practical applications ranging from materials science to geomagnetism. High sensitivity detectors are commonly built using direct current-superconducting quantum interference devices (DC-SQUIDs) or atomic systems. Here we use a single artificial atom to implement an ultrahigh sensitivity magnetometer with a size in the micron range. The artificial atom is a superconducting two-level system at low temperatures, operated in a way similar to atomic magnetometry. The high sensitivity results from quantum coherence combined with strong coupling to magnetic field. By employing projective measurements, we obtain a sensitivity of $2.7\, \t{pT}/\sqrt{\t{Hz}}$ at 10 MHz. We discuss feasible improvements that will increase the sensitivity by over one order of magnitude. The intrinsic sensitivity of this method to AC fields in the 100 kHz - 10 MHz range compares favourably with DC-SQUIDs and atomic magnetometers of equivalent spatial resolution. This result illustrates the potential of artificial quantum systems for sensitive detection and related applications.
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Submitted 4 January, 2013;
originally announced January 2013.
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Quantum non-demolition measurement of microwave photons using engineered quadratic interactions
Authors:
Chunqing Deng,
J. M. Gambetta,
A. Lupascu
Abstract:
We present a quantum electrical circuit with Josephson junctions formed of two anharmonic oscillators coupled with an interaction $gγ_{1}^{2}γ_{2}^{2}$ where $γ_{1}$ and $γ_{2}$ are position-like coordinates. This type of coupling allows the quantum non-demolition measurement of the energy of one oscillator by monitoring the frequency of the second oscillator. Despite the fundamental tradeoff betw…
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We present a quantum electrical circuit with Josephson junctions formed of two anharmonic oscillators coupled with an interaction $gγ_{1}^{2}γ_{2}^{2}$ where $γ_{1}$ and $γ_{2}$ are position-like coordinates. This type of coupling allows the quantum non-demolition measurement of the energy of one oscillator by monitoring the frequency of the second oscillator. Despite the fundamental tradeoff between the coupling strength $g$ and maximum photon storage capacity of the oscillators, it is possible to achieve high fidelity detection of up to 10 photons over time scale of the order of microseconds. We discuss the possibility of observing quantum jumps in the number of photons and related applications.
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Submitted 19 August, 2010;
originally announced August 2010.
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Equation-of-motion treatment of hyperfine interaction in a quantum dot
Authors:
Changxue Deng,
Xuedong Hu
Abstract:
Isolated electron spins in semiconductor nanostructures are promising qubit candidates for a solid state quantum computer, There have seen truly impressive experimental progresses in the study of single spins in the past two years. In this paper we analytically solve the {\it Non-Markovian} single electron spin dynamics due to inhomogeneous hyperfine couplings with surrounding nuclei in a quantu…
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Isolated electron spins in semiconductor nanostructures are promising qubit candidates for a solid state quantum computer, There have seen truly impressive experimental progresses in the study of single spins in the past two years. In this paper we analytically solve the {\it Non-Markovian} single electron spin dynamics due to inhomogeneous hyperfine couplings with surrounding nuclei in a quantum dot. We use the equation-of-motion method assisted with a large field expansion in a full quantum mechanical treatment. We recover the exact solution for fully polarized nuclei. By considering virtual nuclear spin flip-flops mediated by the electron, which generate fluctuations in the Overhauser field (the nuclear field) for the electron spin, we find that the decay amplitude of the transverse electron spin correlation function for partially polarized nuclear spin configurations is of the order unity instead of $\text{O}(1/N)$ ($N$ being the number of nuclei in the dot) obtained in previous studies. We show that the complete amplitude decay can be understood with the spectrum broadening of the correlation function near the electron spin Rabi frequency induced by nuclear spin flip-flops. Our results show that a 90% nuclear polarization can enhance the electron spin $T_2$ time by more than one order of magnitude in some parameter regime. In the long time limit, the envelope of the transverse electron spin correlation function has a non-exponential $1/t^2$ decay in the presence of both polarized and unpolarized nuclei.
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Submitted 24 August, 2006;
originally announced August 2006.
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Analytical Solution of Electron Spin Decoherence Through Hyperfine Interaction in a Quantum Dot
Authors:
Changxue Deng,
Xuedong Hu
Abstract:
We analytically solve the {\it Non-Markovian} single electron spin dynamics due to hyperfine interaction with surrounding nuclei in a quantum dot. We use the equation-of-motion method assisted with a large field expansion, and find that virtual nuclear spin flip-flops mediated by the electron contribute significantly to a complete decoherence of transverse electron spin correlation function. Our…
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We analytically solve the {\it Non-Markovian} single electron spin dynamics due to hyperfine interaction with surrounding nuclei in a quantum dot. We use the equation-of-motion method assisted with a large field expansion, and find that virtual nuclear spin flip-flops mediated by the electron contribute significantly to a complete decoherence of transverse electron spin correlation function. Our results show that a 90% nuclear polarization can enhance the electron spin $T_2$ time by almost two orders of magnitude. In the long time limit, the electron spin correlation function has a non-exponential $1/t^2$ decay in the presence of both polarized and unpolarized nuclei.
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Submitted 23 July, 2006; v1 submitted 14 October, 2005;
originally announced October 2005.
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Decoherence of Nuclear Spin Quantum Memory in Quantum Dot
Authors:
Changxue Deng,
Xuedong Hu
Abstract:
Recently an ensemble of nuclear spins in a quantum dot have been proposed as a long-lived quantum memory. A quantum state of an electron spin in the dot can be faithfully transfered into nuclear spins through controlled hyperfine coupling. Here we study the decoherence of this memory due to nuclear spin dipolar coupling and inhomogeneous hyperfine interaction during the {\it storage} period. We…
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Recently an ensemble of nuclear spins in a quantum dot have been proposed as a long-lived quantum memory. A quantum state of an electron spin in the dot can be faithfully transfered into nuclear spins through controlled hyperfine coupling. Here we study the decoherence of this memory due to nuclear spin dipolar coupling and inhomogeneous hyperfine interaction during the {\it storage} period. We calculated the maximum fidelity of writing, storing and reading operations. Our results show that nuclear spin dynamics can severely limits the performance of the proposed device for quantum information processing and storage based on nuclear spins.
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Submitted 21 June, 2004;
originally announced June 2004.
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Selective Dynamic Nuclear Spin Polarization in Spin-Blocked Double-Dot
Authors:
Changxue Deng,
Xuedong Hu
Abstract:
We study the mechanism of dynamical nuclear spin polarization by hyperfine interaction in spin-blocked double quantum dot system. We calculate the hyperfine transition rates and solve the master equations for the nuclear spins. Specifically, we incorporate the effects of the nuclear quadrupole coupling due to the doping-induced local lattice distortion and strain. Our results show that nuclear q…
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We study the mechanism of dynamical nuclear spin polarization by hyperfine interaction in spin-blocked double quantum dot system. We calculate the hyperfine transition rates and solve the master equations for the nuclear spins. Specifically, we incorporate the effects of the nuclear quadrupole coupling due to the doping-induced local lattice distortion and strain. Our results show that nuclear quadrupole coupling induced by the 5% indium substitution can be used to explain the recent experimental observation of missing arsenic NMR signal in the spin-blocked double dots.
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Submitted 6 April, 2004; v1 submitted 16 February, 2004;
originally announced February 2004.
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Nuclear spin diffusion in semiconductor nanostructures: Effects of inhomogeneous hyperfine interactions
Authors:
Changxue Deng,
Xuedong Hu
Abstract:
We study the effect of contact hyperfine interaction on the nuclear spin diffusion coefficients in semiconductor quantum dots. The diffusion coefficients are calculated with both the method of moment and density matrix. We show that nuclear spin diffusion is strongly suppressed by the nonuniform hyperfine coupling resulting from the confined electron wavefunction. Our results agree with the obse…
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We study the effect of contact hyperfine interaction on the nuclear spin diffusion coefficients in semiconductor quantum dots. The diffusion coefficients are calculated with both the method of moment and density matrix. We show that nuclear spin diffusion is strongly suppressed by the nonuniform hyperfine coupling resulting from the confined electron wavefunction. Our results agree with the observed suppression of nuclear spin diffusion in these structures in recent experiments, and clarify the degree of validity of the method of moment in an inhomogeneous system.
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Submitted 5 October, 2005; v1 submitted 8 December, 2003;
originally announced December 2003.
