Showing 1–17 of 17 results for author: Dempsey, C P

Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)

Authors: C. P. Dempsey, J. T. Dong, I. Villar Rodriguez, Y. Gul, S. Chatterjee, M. Pendharkar, S. N. Holmes, M. Pepper, C. J. Palmstrøm

Abstract: InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. The highest mobility QWs are limited by interfacial roughness scattering and alloy disorder scattering in the cladding and buffer layers. Increasing QW thickness has been shown t… ▽ More InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. The highest mobility QWs are limited by interfacial roughness scattering and alloy disorder scattering in the cladding and buffer layers. Increasing QW thickness has been shown to reduce the effect of both of these scattering mechanisms. However, for current state-of-the-art devices with As-based cladding and barrier layers, the critical thickness is limited to $\leq7$ nm. In this report, we demonstrate the use of strain compensation techniques in the InGaAs cladding layers to extend the critical thickness well beyond this limit. We induce tensile strain in the InGaAs cladding layers by reducing the In concentration from In$_{0.81}$Ga$_{0.19}$As to In$_{0.70}$Ga$_{0.30}$As and we observe changes in both the critical thickness of the well and the maximum achievable mobility. The peak electron mobility at 2 K is $1.16\times10^6$ cm$^2/$Vs, with a carrier density of $4.2\times10^{11}$ /cm$^2$. Additionally, we study the quantum lifetime and Rashba spin splitting in the highest mobility device as these parameters are critical to determine if these structures can be used in topologically nontrivial devices. △ Less

Submitted 27 June, 2024; originally announced June 2024.

Enhanced mobility of ternary InGaAs quantum wells through digital alloying

Authors: Jason T. Dong, Yilmaz Gul, Aaron N. Engel, Teun A. J. van Schijndel, Connor P. Dempsey, Michael Pepper, Christopher J. Palmstrøm

Abstract: High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor. In this report, we demonstrate that by growing the InGaAs quantum wells as a digital alloy, or a short period superlattice, we can reduce the alloy disorder scattering withi… ▽ More High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor. In this report, we demonstrate that by growing the InGaAs quantum wells as a digital alloy, or a short period superlattice, we can reduce the alloy disorder scattering within the quantum well and increase the peak 2 K electron mobility to 545,000 cm^2/V s, which is the highest reported mobility for high In content InGaAs quantum wells to the best of the authors' knowledge. Our results demonstrate that the digital alloy approach can be used to increase the mobility of quantum wells in random alloy ternary materials. △ Less

Submitted 29 March, 2024; v1 submitted 25 March, 2024; originally announced March 2024.

Determining the bulk and surface electronic structure of $α$-Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy

Authors: Aaron N. Engel, Paul J. Corbae, Hadass S. Inbar, Connor P. Dempsey, Shinichi Nishihaya, Wilson Yánez-Parreño, Yuhao Chang, Jason T. Dong, Alexei V. Fedorov, Makoto Hashimoto, Donghui Lu, Christopher J. Palmstrøm

Abstract: The surface and bulk states in topological materials have shown promise in many applications. Grey or $α$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both calculation and experiment over the exact shape of the bulk bands and the number and origin of the surface states. Using spin- and angle-resolved photoemission we investig… ▽ More The surface and bulk states in topological materials have shown promise in many applications. Grey or $α$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both calculation and experiment over the exact shape of the bulk bands and the number and origin of the surface states. Using spin- and angle-resolved photoemission we investigate the bulk and surface electronic structure of $α$-Sn thin films on InSb(001) grown by molecular beam epitaxy. We find that there is no significant warping in the shapes of the bulk bands. We also observe the presence of only two surface states near the valence band maximum in both thin (13 bilayer) and thick (400 bilayer) films. In 50 bilayer films, these two surface states coexist with quantum well states. Surprisingly, both of these surface states are spin-polarized with orthogonal spin-momentum locking and opposite helicities. One of these states is the spin-polarized topological surface state and the other a spin resonance. Finally, the presence of another orthogonal spin-momentum locked topological surface state from a secondary band inversion is verified. Our work clarifies the electronic structure of $α$-Sn(001) such that better control of the electronic properties can be achieved. In addition, the presence of two spin-polarized surface states near the valence band maximum has important ramifications for the use of $α$-Sn in spintronics. △ Less

Submitted 1 March, 2024; originally announced March 2024.

Strain Solitons in an Epitaxially Strained van der Waals-like Material

Authors: Jason T. Dong, Hadass S. Inbar, Connor P. Dempsey, Aaron N. Engel, Christopher J. Palmstrøm

Abstract: Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both predicted and observed. To date, strain solitons have only been observed in exfoliated crystals or mechanically strained bulk crystals. The lack of a scalable approa… ▽ More Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both predicted and observed. To date, strain solitons have only been observed in exfoliated crystals or mechanically strained bulk crystals. The lack of a scalable approach towards the generation of strain solitons poses a significant challenge in the study of and use of the properties of strain solitons. Here we report the formation of strain solitons with epitaxial growth of bismuth on an InSb (111)B substrate by molecular beam epitaxy. The morphology of the strain solitons for films of varying thickness is characterized with scanning tunneling microscopy and the local strain state is determined from the analysis of atomic resolution images. Bending in the solitons is attributed due to interactions with the interface, and large angle bending is associated with edge dislocations. Our results enable the scalable generation of strain solitons. △ Less

Submitted 23 January, 2024; originally announced January 2024.

Growth and characterization of $α$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

Authors: Aaron N. Engel, Connor P. Dempsey, Hadass S. Inbar, Jason T. Dong, Shinichi Nishihaya, Yu Hao Chang, Alexei V. Fedorov, Makoto Hashimoto, Donghui Lu, Christopher J. Palmstrøm

Abstract: $α$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $α$-Sn thin films. $α$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $α… ▽ More $α$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $α$-Sn thin films. $α$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $α$-Sn via molecular beam epitaxy on the Sb-rich c(4$\times$4) surface reconstruction of InSb(001) rather than the In-rich c(8$\times$2), we demonstrate a route to substantially decrease and minimize this indium incorporation. The reduction in indium concentration allows for the study of the surface and bulk Dirac nodes in $α$-Sn via angle-resolved photoelectron spectroscopy without the common approaches of bulk doping or surface dosing, simplifying topological phase identification. The lack of indium incorporation is verified in angle-resolved and -integrated ultraviolet photoelectron spectroscopy as well as in clear changes in the Hall response. △ Less

Submitted 29 November, 2023; v1 submitted 27 November, 2023; originally announced November 2023.

Competing Uniaxial Anisotropies in Epitaxial Fe Thin Films Grown on InAs(001)

Authors: James M. Etheridge, Joseph Dill, Connor P. Dempsey, Mihir Pendharkar, Javier Garcia-Barriocanal, Guichuan Yu, Vlad S. Pribiag, Paul A. Crowell, Chris J. Palmstrøm

Abstract: We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane… ▽ More We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane lattice constants of the Fe films, confirming the correlation between the onset of film relaxation and the corresponding shear strain inferred from ferromagnetic resonance data. These results are relevant for ongoing efforts to develop spintronic and quantum devices utilizing large spin-orbit coupling in III-V semiconductors. △ Less

Submitted 23 May, 2023; originally announced May 2023.

Comments: 5 figures

Electronic structure of InSb (001), (110), and (111)B surfaces

Authors: Jason T. Dong, Hadass S. Inbar, Mihir Pendharkar, Teun A. J. van Schijndel, Elliot C. Young, Connor P. Dempsey, Christopher J. Palmstrøm

Abstract: The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3) surface reconstruction. The surface Fermi-level of the In rich and the equal In:Sb (001), (110), and (111)B surface reconstructions was observed to be pinned n… ▽ More The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3) surface reconstruction. The surface Fermi-level of the In rich and the equal In:Sb (001), (110), and (111)B surface reconstructions was observed to be pinned near the valence band edge. This observed pinning is consistent with a charge neutrality level lying near the valence band maximum. Sb termination was observed to shift the surface Fermi-level position by up to $254 \pm 35$ meV towards the conduction band on the InSb (001) surface and $60 \pm 35$ meV towards the conduction band on the InSb(111)B surface. The surface Sb on the (001) can shift the surface from electron depletion to electron accumulation. We propose the shift in the Fermi-level pinning is due to charge transfer from Sb clusters on the Sb terminated surfaces. Additionally, many sub-gap states were observed for the (111)B (3x1) surface, which are attributed to the disordered nature of this surface. This work demonstrates the tuning of the Fermi-level pinning position of InSb surfaces with Sb termination. △ Less

Submitted 18 February, 2023; originally announced February 2023.

Comments: 7 pages, 5 figures

Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films

Authors: Hadass S. Inbar, Muhammad Zubair, Jason T. Dong, Aaron N Engel, Connor P. Dempsey, Yu Hao Chang, Shinichi Nishihaya, Shoaib Khalid, Alexei V. Fedorov, Anderson Janotti, Chris J. Palmstrøm

Abstract: Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth an… ▽ More Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials. △ Less

Submitted 16 May, 2023; v1 submitted 1 February, 2023; originally announced February 2023.

Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates

Authors: A. -H. Chen, C. P. Dempsey, M. Pendharkar, A. Sharma, B. Zhang, S. Tan, L. Bellon, S. M. Frolov, C. J. Palmstrom, E. Bellet-Amalric, M. Hocevar

Abstract: Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a drawback arises when these films return to room temperature, as they tend to undergo dewetting. This issue is mitigated by capping the films with an amorphous layer. In this study, we examined the impact of different in… ▽ More Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a drawback arises when these films return to room temperature, as they tend to undergo dewetting. This issue is mitigated by capping the films with an amorphous layer. In this study, we examined the impact of different in-situ fabricated caps on the structural characteristics of Sn thin films deposited at 80 K on InSb substrates. Regardless of the type of capping, we observed that the films remained smooth upon returning to room temperature and were epitaxial on InSb in the cubic Sn ($α$-Sn) phase. However, we noted a correlation between alumina capping with an electron beam evaporator and an increased presence of tetragonal Sn ($β$-Sn) grains. This suggests that heating from the alumina source may contribute to a partial phase transition in the Sn layer. The existence of the $β$-Sn phase induced superconducting behavior of the films by percolation effect. This study highlights the potential for modifying the structural properties of cryogenic Sn thin films through in-situ capping, paving the way for precise control in the production of superconducting Sn films for integration into quantum computing platforms. △ Less

Submitted 18 September, 2023; v1 submitted 29 January, 2023; originally announced January 2023.

Tuning the Band Topology of GdSb by Epitaxial Strain

Authors: Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee, Aaron N. Engel, Shoaib Khalid, Connor P. Dempsey, Mihir Pendharkar, Yu Hao Chang, Shinichi Nishihaya, Alexei V. Fedorov, Donghui Lu, Makoto Hashimoto, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in b… ▽ More Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostatic pressure have shown interesting trends in magnetoresistance, magnetic ordering, and superconductivity, with theory predicting pressure-induced band inversion. Yet, thus far, there have been no direct experimental reports of interchanged band order in RE-Vs due to strain. This work studies the evolution of band topology in biaxially strained GdSb (001) epitaxial films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that biaxial strain continuously tunes the electronic structure from topologically trivial to nontrivial, reducing the gap between the hole and the electron bands dispersing along the [001] direction. The conduction and valence band shifts seen in DFT and ARPES measurements are explained by a tight-binding model that accounts for the orbital symmetry of each band. Finally, we discuss the effect of biaxial strain on carrier compensation and magnetic ordering temperature. △ Less

Submitted 18 April, 2023; v1 submitted 28 November, 2022; originally announced November 2022.

Missing odd-order Shapiro steps do not uniquely indicate fractional Josephson effect

Authors: P. Zhang, S. Mudi, M. Pendharkar, J. S. Lee, C. P. Dempsey, A. P. McFadden, S. D. Harrington, J. T. Dong, H. Wu, A. -H. Chen, M. Hocevar, C. J. Palmstrøm, S. M. Frolov

Abstract: Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave irradiation. A fraction of induced resonances, known as Shapiro steps, should vanish, in a pattern that signifies the presence of Majorana modes. Her… ▽ More Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave irradiation. A fraction of induced resonances, known as Shapiro steps, should vanish, in a pattern that signifies the presence of Majorana modes. Here we report patterns of Shapiro steps expected in topological Josephson junctions, such as the missing first Shapiro step, or several missing odd-order steps. But our junctions, which are InAs quantum wells with Al contacts, are studied near zero magnetic field, meaning that they are not in the topological regime. We also observe other patterns such as missing even steps and several missing steps in a row, not relevant to topological superconductivity. Potentially responsible for our observations is rounding of not fully developed steps superimposed on non-monotonic resistance versus voltage curves, but several origins may be at play. Our results demonstrate that any single pattern, even striking, cannot uniquely identify topological superconductivity, and a multifactor approach is necessary to unambiguously establish this important phenomenon. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Comments: Written using The Block Method. Data on Zenodo DOI: https://zenodo.org/record/6416083

Large Second-Order Josephson Effect in Planar Superconductor-Semiconductor Junctions

Authors: P. Zhang, A. Zarassi, L. Jarjat, V. Van de Sande, M. Pendharkar, J. S. Lee, C. P. Dempsey, A. P. McFadden, S. D. Harrington, J. T. Dong, H. Wu, A. -H. Chen, M. Hocevar, C. J. Palmstrøm, S. M. Frolov

Abstract: We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephson harmonic, the $\sin(2\varphi)$ term. First, superconducting quantum interference devices (dc-SQUIDs) show half-periodic oscillations, tunable by gat… ▽ More We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephson harmonic, the $\sin(2\varphi)$ term. First, superconducting quantum interference devices (dc-SQUIDs) show half-periodic oscillations, tunable by gate voltages as well as magnetic flux. Second, Josephson junction devices exhibit kinks near half-flux quantum in supercurrent diffraction patterns. Third, half-integer Shapiro steps are present in the junctions. Similar phenomena are observed in Sn/InAs quantum well devices. We perform data fitting to a numerical model with a two-component current phase relation. Analysis including a loop inductance suggests that the sign of the second harmonic term is negative. The microscopic origins of the observed effect remain to be understood. We consider alternative explanations which can account for some but not all of the evidence. △ Less

Submitted 19 November, 2023; v1 submitted 14 November, 2022; originally announced November 2022.

Comments: Written using The Block Method. Data on Zenodo DOI: https://doi.org/10.5281/zenodo.6416083 v2: Added block "Non-identical negative and positive switching currents" and Figs.S4, S5. v3: Added Figs. 6, S6-S9, simulations with both inductive and second harmonic effects

Journal ref: SciPost Phys. 16, 030 (2024)

Planar Josephson Junctions Templated by Nanowire Shadowing

Authors: P. Zhang, A. Zarassi, M. Pendharkar, J. S. Lee, L. Jarjat, V. Van de Sande, B. Zhang, S. Mudi, H. Wu, S. Tan, C. P. Dempsey, A. P. McFadden, S. D. Harrington, B. Shojaei, J. T. Dong, A. -H. Chen, M. Hocevar, C. J. Palmstrøm, S. M. Frolov

Abstract: More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technol… ▽ More More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technologies. When both junction contacts are placed on the same surface, such as a two-dimensional material, the junction is called ``planar". One outstanding challenge is that not all materials are amenable to the standard planar junction fabrication. The device quality, rather than the intrinsic characteristics, may be defining the results. Here, we introduce a technique in which nanowires are placed on the surface and act as a shadow mask for the superconductor. The advantages are that the smallest dimension is determined by the nanowire diameter and does not require lithography, and that the junction is not exposed to chemicals such as etchants. We demonstrate this method with an InAs quantum well, using two superconductors - Al and Sn, and two semiconductor nanowires - InAs and InSb. The junctions exhibit critical current levels consistent with transparent interfaces and uniform width. We show that the template nanowire can be operated as a self-aligned electrostatic gate. Beyond single junctions, we create SQUIDs with two gate-tunable junctions. We suggest that our method can be used for a large variety of quantum materials including van der Waals layers, topological insulators, Weyl semimetals and future materials for which proximity effect devices is a promising research avenue. △ Less

Submitted 8 November, 2022; originally announced November 2022.

Comments: Written using The Block Method. Data on Zenodo DOI: https://doi.org/10.5281/zenodo.6416083

Gate-tunable Superconducting Diode Effect in a Three-terminal Josephson Device

Authors: Mohit Gupta, Gino V. Graziano, Mihir Pendharkar, Jason T. Dong, Connor P. Dempsey, Chris Palmstrøm, Vlad S. Pribiag

Abstract: The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensiona… ▽ More The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensional electron gas proximitized by an epitaxial aluminum superconducting layer. We demonstrate that the diode efficiency in our devices can be tuned by a small out-of-plane magnetic field or by electrostatic gating. We show that the Josephson diode effect in these devices is a consequence of the artificial realization of a current-phase relation that contains higher harmonics. We also show nonlinear DC intermodulation and simultaneous two-signal rectification, enabled by the multi-terminal nature of the devices. Furthermore, we show that the diode effect is an inherent property of multi-terminal Josephson devices, establishing an immediately scalable approach by which potential applications of the Josephson diode effect can be realized, agnostic to the underlying material platform. These Josephson devices may also serve as gate-tunable building blocks in designing topologically protected qubits. △ Less

Submitted 3 June, 2023; v1 submitted 16 June, 2022; originally announced June 2022.

Journal ref: Nat Commun 14, 3078 (2023)

Selective Control of Conductance Modes in Multi-terminal Josephson Junctions

Authors: Gino V. Graziano, Mohit Gupta, Mihir Pendharkar, Jason T. Dong, Connor P. Dempsey, Chris Palmstrøm, Vlad S. Pribiag

Abstract: The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work we employ a quantum point cont… ▽ More The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work we employ a quantum point contact geometry in three-terminal Josephson devices. We demonstrate independent control of conductance modes between each pair of terminals and access to the single-mode regime coexistent with the presence of superconducting coupling. These results establish a full platform on which to realize tunable Andreev bound state spectra in multi-terminal Josephson junctions. △ Less

Submitted 9 October, 2022; v1 submitted 4 January, 2022; originally announced January 2022.

Comments: 15 pages, 4 figures

Journal ref: Nat Commun 13, 5933 (2022)

Supercurrent parity-meter in a nanowire Cooper-pair transistor

Authors: Ji-Yin Wang, Constantin Schrade, Vukan Levajac, David van Driel, Kongyi Li, Sasa Gazibegovic, Ghada Badawy, Roy L. M. Op het Veld, Joon Sue Lee, Mihir Pendharkar, Connor P. Dempsey, Chris J. Palmstrøm, Erik P. A. M. Bakkers, Liang Fu, Leo P. Kouwenhoven, Jie Shen

Abstract: We study a Cooper-pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the superconducting island and, due to the Coulomb blockade,mediate a supercurrent by coherent co-tunneling of Cooper pairs. We show that the supercurrent resulting from such co-… ▽ More We study a Cooper-pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the superconducting island and, due to the Coulomb blockade,mediate a supercurrent by coherent co-tunneling of Cooper pairs. We show that the supercurrent resulting from such co-tunneling events exhibits, for low to moderate magnetic fields, a phase offset that discriminates even and odd charge ground states on the superconducting island. Notably,this phase offset persists when a subgap state approaches zero energy and, based on theoretical considerations, permits parity measurements of subgap states by supercurrent interferometry. Such supercurrent parity measurements could, in a new series of experiments, provide an alternative approach for manipulating and protecting quantum information stored in the isolated subgap levels of superconducting islands. △ Less

Submitted 18 July, 2021; originally announced July 2021.

Journal ref: Science Advances 8, eabm9896 (2022)

Parity-preserving and magnetic field resilient superconductivity in indium antimonide nanowires with tin shells

Authors: M. Pendharkar, B. Zhang, H. Wu, A. Zarassi, P. Zhang, C. P. Dempsey, J. S. Lee, S. D. Harrington, G. Badawy, S. Gazibegovic, J. Jung, A. -H. Chen, M. A. Verheijen, M. Hocevar, E. P. A. M. Bakkers, C. J. Palmstrøm, S. M. Frolov

Abstract: We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducti… ▽ More We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducting gap in the range 600-700 micro-eV. Superconductivity persists up to 4 T in magnetic field. A tin island exhibits the coveted two-electron charging effect, a hallmark of charge parity stability. The findings open avenues for superconducting and topological quantum circuits based on new superconductor-semiconductor combinations. △ Less

Submitted 11 December, 2019; originally announced December 2019.