Showing 1–50 of 743 results for author: Chen, Z

Imaging interstitial atoms with multislice electron ptychography

Authors: Zhen Chen, Yu-Tsun Shao, Steven E. Zeltmann, Harikrishnan K. P., Ethan R. Rosenberg, Caroline A. Ross, Yi Jiang, David A. Muller

Abstract: Doping impurity atoms is a strategy commonly used to tune the functionality of materials including catalysts, semiconductors, and quantum emitters. The location of dopants and their interaction with surrounding atoms could significantly modulate the transport, optical, or magnetic properties of materials. However, directly imaging individual impurity atoms inside materials remains a generally unad… ▽ More Doping impurity atoms is a strategy commonly used to tune the functionality of materials including catalysts, semiconductors, and quantum emitters. The location of dopants and their interaction with surrounding atoms could significantly modulate the transport, optical, or magnetic properties of materials. However, directly imaging individual impurity atoms inside materials remains a generally unaddressed need. Here, we demonstrate how single atoms can be detected and located in three dimensions via multislice electron ptychography.Interstitial atoms in a complex garnet oxide heterostructure are resolved with a depth resolution better than 2.7 nm, together with a deep-sub-Ångstrom lateral resolution. Single-scan atomic-layer depth resolution should be possible using strongly divergent electron probe illumination. Our results provide a new approach to detecting individual atomic defects and open doors to characterize the local environments and spatial distributions that underlie a broad range of systems such as single-atom catalysts, nitrogen-vacancy centers, and other atomic-scale quantum sensors. △ Less

Submitted 25 July, 2024; originally announced July 2024.

Comments: 28 pages, 5 figures, 10 supplementary figures

Deep learning density functional theory Hamiltonian in real space

Authors: Zilong Yuan, Zechen Tang, Honggeng Tao, Xiaoxun Gong, Zezhou Chen, Yuxiang Wang, He Li, Yang Li, Zhiming Xu, Minghui Sun, Boheng Zhao, Chong Wang, Wenhui Duan, Yong Xu

Abstract: Deep learning electronic structures from ab initio calculations holds great potential to revolutionize computational materials studies. While existing methods proved success in deep-learning density functional theory (DFT) Hamiltonian matrices, they are limited to DFT programs using localized atomic-like bases and heavily depend on the form of the bases. Here, we propose the DeepH-r method for dee… ▽ More Deep learning electronic structures from ab initio calculations holds great potential to revolutionize computational materials studies. While existing methods proved success in deep-learning density functional theory (DFT) Hamiltonian matrices, they are limited to DFT programs using localized atomic-like bases and heavily depend on the form of the bases. Here, we propose the DeepH-r method for deep-learning DFT Hamiltonians in real space, facilitating the prediction of DFT Hamiltonian in a basis-independent manner. An equivariant neural network architecture for modeling the real-space DFT potential is developed, targeting a more fundamental quantity in DFT. The real-space potential exhibits simplified principles of equivariance and enhanced nearsightedness, further boosting the performance of deep learning. When applied to evaluate the Hamiltonian matrix, this method significantly improved in accuracy, as exemplified in multiple case studies. Given the abundance of data in the real-space potential, this work may pave a novel pathway for establishing a ``large materials model" with increased accuracy. △ Less

Submitted 19 July, 2024; originally announced July 2024.

Probing spin textures in atomically thin CrSBr through tunneling magnetoresistance

Authors: Ziqi Liu, Chengfeng Zhu, Yuchen Gao, Zuxin Chen, Pingfan Gu, Yu Ye

Abstract: The exploration of spin configurations and magnetoresistance in van der Waals magnetic semiconductors, particularly in the realm of thin-layer structures, holds paramount significance for the development of two-dimensional spintronic nanodevices. In this Letter, we conducted comprehensive magnetotransport measurements on a few-layer CrSBr using a vertical tunneling device configuration. Notably, o… ▽ More The exploration of spin configurations and magnetoresistance in van der Waals magnetic semiconductors, particularly in the realm of thin-layer structures, holds paramount significance for the development of two-dimensional spintronic nanodevices. In this Letter, we conducted comprehensive magnetotransport measurements on a few-layer CrSBr using a vertical tunneling device configuration. Notably, our investigation revealed that tunneling magnetoresistance possesses a distinctive capability to discern spin configurations that would otherwise remain indistinguishable through alternative techniques such as photoluminescence. We observed the existence of energy-degenerate states exhibiting identical net magnetization and comparable spin configurations, which could be differentiated based on their rectification properties, reminiscent of a diode-like behavior at positive and negative bias voltages. Specifically, in devices comprising 5-layer CrSBr, we observed an intriguing positive magnetoresistive state when subjected to an in-plane magnetic field along the $b$-axis. To gain a deeper understanding of the underlying mechanisms, we developed a one-dimensional linear chain model that successfully computed the magnetic state, thereby elucidating the underlying spin configurations responsible for the observed transport phenomena. These findings not only provide novel perspectives into the intricate spin textures of two-dimensional CrSBr but also underscore the sensitivity of tunneling as a probing technique for investigating the magnetic order in van der Waals materials. △ Less

Submitted 18 July, 2024; originally announced July 2024.

Comments: 8 pages, 4 figures

Weakly Coupled Type-II Superconductivity in a Laves compound ZrRe2

Authors: Yingpeng Yu, Zhaolong Liu, Qi Li, Zhaoxu Chen, Yulong Wang, Munan Hao, Yaling Yang, Chunsheng Gong, Long Chen, Zhenkai Xie, Kaiyao Zhou, Huifen Ren, Xu Chen, Shifeng Jin

Abstract: We present a comprehensive investigation of the superconducting properties of ZrRe2, a Re-based hexagonal Laves compounds. ZrRe2 crystallizes in a C14-type structure (space group P63/mmc), with cell parameters a=b=5.2682(5) and c=8.63045 . Resistivity and magnetic susceptibility data both suggest that ZrRe2 exhibits a sharp superconducting transition above 6.1 K. The measured lower and upper criti… ▽ More We present a comprehensive investigation of the superconducting properties of ZrRe2, a Re-based hexagonal Laves compounds. ZrRe2 crystallizes in a C14-type structure (space group P63/mmc), with cell parameters a=b=5.2682(5) and c=8.63045 . Resistivity and magnetic susceptibility data both suggest that ZrRe2 exhibits a sharp superconducting transition above 6.1 K. The measured lower and upper critical fields are 6.27 mT and 12.77 T, respectively, with a large upper critical field that approached the Pauli limit.Measurements of the heat capacity confirm the presence of bulk superconductivity, with a normalized specific heat change of 1.24 and an electron-phonon strength of 0.69 . DFT calculations revealed that the band structure of ZrRe2 is intricate and without van-Hove singularity. The observed large specific heat jump, combined with the electron-phonon strength , suggests that ZrRe2 is a weakly coupled type II superconductor. △ Less

Submitted 14 July, 2024; originally announced July 2024.

Comments: 14 pages,7 figures, 2 tables

Critical fluctuation and noise spectra in two-dimensional Fe$_{3}$GeTe$_{2}$ magnets

Authors: Yuxin Li, Zhe Ding, Chen Wang, Haoyu Sun, Zhousheng Chen, Pengfei Wang, Ya Wang, Ming Gong, Hualing Zeng, Fazhan Shi, Jiangfeng Du

Abstract: Critical fluctuations play a fundamental role in determining the spin orders for low-dimensional quantum materials, especially for recently discovered two-dimensional (2D) magnets. Here we employ the quantum decoherence imaging technique utilizing nitrogen-vacancy centers in diamond to explore the critical magnetic fluctuations and the associated temporal spin noise in van der Waals magnet… ▽ More Critical fluctuations play a fundamental role in determining the spin orders for low-dimensional quantum materials, especially for recently discovered two-dimensional (2D) magnets. Here we employ the quantum decoherence imaging technique utilizing nitrogen-vacancy centers in diamond to explore the critical magnetic fluctuations and the associated temporal spin noise in van der Waals magnet $\rm{Fe_{3}GeTe_{2}}$. We show that the critical fluctuation contributes to a random magnetic field characterized by the noise spectra, which can be changed dramatically near the critical temperature $T_c$. A theoretical model to describe this phenomenon is developed, showing that the spectral density is characterized by a $1/f$ noise near the $T_c$, while away from this point it behaves like a white noise. The crossover at a certain temperature between these two situations is determined by changing of the distance between the sample and the diamond. This work provides a new way to study critical fluctuation and to extract some of the critical exponents, which may greatly deepen our understanding of criticality in a wide range of physical systems. △ Less

Submitted 30 June, 2024; originally announced July 2024.

Improving density matrix electronic structure method by deep learning

Authors: Zechen Tang, Nianlong Zou, He Li, Yuxiang Wang, Zilong Yuan, Honggeng Tao, Yang Li, Zezhou Chen, Boheng Zhao, Minghui Sun, Hong Jiang, Wenhui Duan, Yong Xu

Abstract: The combination of deep learning and ab initio materials calculations is emerging as a trending frontier of materials science research, with deep-learning density functional theory (DFT) electronic structure being particularly promising. In this work, we introduce a neural-network method for modeling the DFT density matrix, a fundamental yet previously unexplored quantity in deep-learning electron… ▽ More The combination of deep learning and ab initio materials calculations is emerging as a trending frontier of materials science research, with deep-learning density functional theory (DFT) electronic structure being particularly promising. In this work, we introduce a neural-network method for modeling the DFT density matrix, a fundamental yet previously unexplored quantity in deep-learning electronic structure. Utilizing an advanced neural network framework that leverages the nearsightedness and equivariance properties of the density matrix, the method demonstrates high accuracy and excellent generalizability in multiple example studies, as well as capability to precisely predict charge density and reproduce other electronic structure properties. Given the pivotal role of the density matrix in DFT as well as other computational methods, the current research introduces a novel approach to the deep-learning study of electronic structure properties, opening up new opportunities for deep-learning enhanced computational materials study. △ Less

Submitted 25 June, 2024; originally announced June 2024.

Gigantic-oxidative atomically layered epitaxy for designed complex oxides

Authors: Guangdi Zhou, Haoliang Huang, Fengzhe Wang, Heng Wang, Qishuo Yang, Zihao Nie, Wei Lv, Cui Ding, Yueying Li, Danfeng Li, Yujie Sun, Junhao Lin, Guang-Ming Zhang, Qi-Kun Xue, Zhuoyu Chen

Abstract: In designing material functionality within the intricate realm of transition metal oxides, lattice structure and d-orbital occupancy are two principal determinants of the correlated physical properties, such as superconductivity. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, kinetic mobility, and synthesis precision, particularly… ▽ More In designing material functionality within the intricate realm of transition metal oxides, lattice structure and d-orbital occupancy are two principal determinants of the correlated physical properties, such as superconductivity. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, kinetic mobility, and synthesis precision, particularly for oxidation-demanding phases. We introduce a methodology, namely the gigantic-oxidative atomically layered epitaxy (GOAL-Epitaxy), enhancing oxidation power 3-4 orders of magnitude beyond oxide molecular beam epitaxy (OMBE) and pulsed laser deposition (PLD), while ensuring atomic-layer-by-layer growth of designed complex structures. Consequently, thermodynamic stability is markedly augmented at elevated temperatures, improving growth kinetics. We demonstrate the accurate synthesis of complex nickelates and cuprates, especially an artificially designed structure as a parent of high-temperature superconductivity, in which alternating single and double NiO2 layers possess distinct nominal d-orbital occupancy. The GOAL-Epitaxy enables material discovery within the vastly broadened growth parameter space. △ Less

Submitted 24 June, 2024; originally announced June 2024.

Tunable Fano and Dicke resonant tunneling of double quantum dots sandwiched between topological insulators

Authors: Yuan Hong, Zhen-Guo Fu, Zhou-Wei-Yu Chen, Feng Chi, Zhigang Wang, Wei Zhang, Ping Zhang

Abstract: We study the resonant tunneling in double quantum dots (DQD) sandwiched between surfaces of topological insulator (TI) Bi$_2$Te$_3$, which possess strong spin-orbit coupling (SOC) and $^{d}C_{3v}$ double group symmetry. Distinct from the spin-conserved case with two-dimensional electron gas (2DEG) electrodes, the conductance displays an asymmetrical double-peak Fano-type lineshape rather than Dick… ▽ More We study the resonant tunneling in double quantum dots (DQD) sandwiched between surfaces of topological insulator (TI) Bi$_2$Te$_3$, which possess strong spin-orbit coupling (SOC) and $^{d}C_{3v}$ double group symmetry. Distinct from the spin-conserved case with two-dimensional electron gas (2DEG) electrodes, the conductance displays an asymmetrical double-peak Fano-type lineshape rather than Dicke-type lineshape in the zero-field cases. While a Landau-Zener-like lineshape trajectory, which is identified as a signal of competition effect, could be developed by increasing the strength of interdot hopping. Furthermore, when applying an in-plane Zeeman field, we find that the conductance lineshape crossover between Fano and Dicke type could be driven by tilting the field orientation. Moreover, the rotational symmetry of the system could also be revealed from the lineshape trajectory. Our findings will contribute to a better understanding of the resonant tunneling in the presence of electrode SOC and may be confirmed experimentally in the future. △ Less

Submitted 16 June, 2024; originally announced June 2024.

Comments: 6 pages, 4 figures

Universal materials model of deep-learning density functional theory Hamiltonian

Authors: Yuxiang Wang, Yang Li, Zechen Tang, He Li, Zilong Yuan, Honggeng Tao, Nianlong Zou, Ting Bao, Xinghao Liang, Zezhou Chen, Shanghua Xu, Ce Bian, Zhiming Xu, Chong Wang, Chen Si, Wenhui Duan, Yong Xu

Abstract: Realizing large materials models has emerged as a critical endeavor for materials research in the new era of artificial intelligence, but how to achieve this fantastic and challenging objective remains elusive. Here, we propose a feasible pathway to address this paramount pursuit by developing universal materials models of deep-learning density functional theory Hamiltonian (DeepH), enabling compu… ▽ More Realizing large materials models has emerged as a critical endeavor for materials research in the new era of artificial intelligence, but how to achieve this fantastic and challenging objective remains elusive. Here, we propose a feasible pathway to address this paramount pursuit by developing universal materials models of deep-learning density functional theory Hamiltonian (DeepH), enabling computational modeling of the complicated structure-property relationship of materials in general. By constructing a large materials database and substantially improving the DeepH method, we obtain a universal materials model of DeepH capable of handling diverse elemental compositions and material structures, achieving remarkable accuracy in predicting material properties. We further showcase a promising application of fine-tuning universal materials models for enhancing specific materials models. This work not only demonstrates the concept of DeepH's universal materials model but also lays the groundwork for developing large materials models, opening up significant opportunities for advancing artificial intelligence-driven materials discovery. △ Less

Submitted 15 June, 2024; originally announced June 2024.

Above room-temperature two-dimensional ferromagnetic half-metals in Mn-based Janus magnets

Authors: Xiang-Fan Huang, Kang-Jie Li, Zequan Wang, Shi-Bo Zhao, Bing Shen, Zu-Xin Chen, Yusheng Hou

Abstract: Two-dimensional (2D) ferromagnets and their heterostructures offer fertile grounds for designing fascinating functionalities in ultra-thin spintronic devices. Here, by first-principles calculations, we report the discovery of energetically and thermodynamically stable 2D ferromagnets with very strong inplane magnetic anisotropy in MnXY (X = S, and Se; Y = Cl, Br and I) monolayers. Remarkably, we f… ▽ More Two-dimensional (2D) ferromagnets and their heterostructures offer fertile grounds for designing fascinating functionalities in ultra-thin spintronic devices. Here, by first-principles calculations, we report the discovery of energetically and thermodynamically stable 2D ferromagnets with very strong inplane magnetic anisotropy in MnXY (X = S, and Se; Y = Cl, Br and I) monolayers. Remarkably, we find that the Curie temperatures of the ferromagnetic MnSBr, MnSI, MnSeCl, and MnSeI monolayers are as high as 271, 273, 231 and 418 K, respectively. In addition, we demonstrate that these ferromagnetic monolayers are intrinsic half-metals with large spin band gaps ranging from 2.5 eV to 3.2 eV. When spin-orbit coupling is considered in these ferromagnetic monolayers, the nature of their half-metal is almost unaffected. Finally, the strong inplane magnetic anisotropy of MnSY (Y = Br, I) and MnSeY (Y = Cl, I) monolayers originate mainly from halogen and chalcogen atoms, respectively. Our work shows 2D Janus Mn-based ferromagnetic half-metals may have appealing functionalities in high-performance spintronic applications. △ Less

Submitted 9 June, 2024; originally announced June 2024.

Comments: 16 pages, 4 figures, accepted by Applied Physics Letters

Journal ref: Appl. Phys. Lett. 124, 252402 (2024)

Intrinsic second-order topological insulators in two-dimensional polymorphic graphyne with sublattice approximation

Authors: Z. J. Chen, S. G. Xu, Z. J. Xie, H. Xu, H. M. Weng

Abstract: In two dimensions, intrinsic second-order topological insulators (SOTIs) are characterized by topological corner states that emerge at the intersections of distinct edges with reversed mass signs, enforced by spatial symmetries. Here, we present a comprehensive investigation within the class BDI to clarify the symmetry conditions ensuring the presence of intrinsic SOTIs in two dimensions. We revea… ▽ More In two dimensions, intrinsic second-order topological insulators (SOTIs) are characterized by topological corner states that emerge at the intersections of distinct edges with reversed mass signs, enforced by spatial symmetries. Here, we present a comprehensive investigation within the class BDI to clarify the symmetry conditions ensuring the presence of intrinsic SOTIs in two dimensions. We reveal that the (anti-)commutation relationship between spatial symmetries and chiral symmetry is a reliable indicator of intrinsic corner states. Through first-principles calculations, we identify several ideal candidates within carbon-based polymorphic graphyne structures for realizing intrinsic SOTIs under sublattice approximation. Furthermore, we show that the corner states in these materials persist even in the absence of sublattice approximation. Our findings not only deepen the understanding of higher-order topological phases but also open new pathways for realizing topological corner states that are readily observable. △ Less

Submitted 20 June, 2024; v1 submitted 9 June, 2024; originally announced June 2024.

Sub-nanometer depth resolution and single dopant visualization achieved by tilt-coupled multislice electron ptychography

Authors: Zehao Dong, Yang Zhang, Chun-Chien Chiu, Sicheng Lu, Jianbing Zhang, Yu-Chen Liu, Suya Liu, Jan-Chi Yang, Pu Yu, Yayu Wang, Zhen Chen

Abstract: Real-space imaging of three-dimensional atomic structures is a critical yet challenging task in materials science. Although scanning transmission electron microscopy has achieved sub-angstrom lateral resolution through techniques like electron ptychography1,2, depth resolution remains limited to only 2 to 3 nanometers with a single projection setup3,4. Attaining better depth resolution typically n… ▽ More Real-space imaging of three-dimensional atomic structures is a critical yet challenging task in materials science. Although scanning transmission electron microscopy has achieved sub-angstrom lateral resolution through techniques like electron ptychography1,2, depth resolution remains limited to only 2 to 3 nanometers with a single projection setup3,4. Attaining better depth resolution typically necessitates large sample tilt angles and many projections, as seen in atomic electron tomography5,6. Here, we develop a new algorithm based on multislice electron ptychography which couples only a few projections at small tilt angles, but is sufficient to improve the depth resolution by more than threefold to the sub-nanometer scale, and potentially to the atomic level. This technique maintains high resolving power for both light and heavy atoms, and significantly improves the visibility of single dopants. We are thus able to experimentally detect dilute substitutional praseodymium dopants in a brownmillerite oxide, Ca2Co2O5, in three dimensions and observe the accompanying lattice distortion. This technique requires only a moderate level of data acquisition or processing, and can be seamlessly integrated into electron microscopes equipped with conventional components. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Comments: 27 pages, 5 figures, 10 supplementary figures

Effects of Kitaev Interaction on Magnetic Orders and Anisotropy

Authors: Lianchuang Li, Binhua Zhang, Zefeng Chen, Changsong Xu, Hongjun Xiang

Abstract: We systematically investigate the effects of Kitaev interaction on magnetic orders and anisotropy in both triangular and honeycomb lattices. Our study highlights the critical role of the Kitaev interaction in modulating phase boundaries and predicting new phases, e.g., zigzag phase in triangular lattice and AABB phase in honeycomb lattice, which are absent with pure Heisenberg interactions. Moreov… ▽ More We systematically investigate the effects of Kitaev interaction on magnetic orders and anisotropy in both triangular and honeycomb lattices. Our study highlights the critical role of the Kitaev interaction in modulating phase boundaries and predicting new phases, e.g., zigzag phase in triangular lattice and AABB phase in honeycomb lattice, which are absent with pure Heisenberg interactions. Moreover, we reveal the special state-dependent anisotropy of Kitaev interaction, and develop a general method that can determine the presence of Kitaev interaction in different magnets. It is found that the Kitaev interaction does not induce anisotropy in some magnetic orders such as ferromagnetic order, while can cause different anisotropy in other magnetic orders. Furthermore, we emphasize that the off-diagonal $Γ$ interaction also contributes to anisotropy, competing with the Kitaev interaction to reorient spin arrangements. Our work establishes a framework for comprehensive understanding the impact of Kitaev interaction on ordered magnetism. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Strength of Kitaev Interaction in Na$_3$Co$_2$SbO$_6$ and Na$_3$Ni$_2$BiO$_6$

Authors: Zefeng Chen, Binhua Zhang, Weiqin Zhu, Lianchuang Li, Boyu Liu, Junsheng Feng, Changsong Xu, Hongjun Xiang

Abstract: Kitaev spin liquid is proposed to be promisingly realized in low spin-orbit coupling $3d$ systems, represented by Na$_3$Co$_2$SbO$_6$ and Na$_3$Ni$_2$BiO$_6$. However, the existence of Kitaev interaction is still debatable among experiments, and obtaining the strength of Kitaev interaction from first-principles calculations is also challenging. Here, we report the state-dependent anisotropy of Kit… ▽ More Kitaev spin liquid is proposed to be promisingly realized in low spin-orbit coupling $3d$ systems, represented by Na$_3$Co$_2$SbO$_6$ and Na$_3$Ni$_2$BiO$_6$. However, the existence of Kitaev interaction is still debatable among experiments, and obtaining the strength of Kitaev interaction from first-principles calculations is also challenging. Here, we report the state-dependent anisotropy of Kitaev interaction, based on which a convenient method is developed to rapidly determine the strength of Kitaev interaction. Applying such method and density functional theory calculations, it is found that Na$_3$Co$_2$SbO$_6$ with $3d^7$ configuration exhibits considerable ferromagnetic Kitaev interaction. Moreover, by further applying the symmetry-adapted cluster expansion method, a realistic spin model is determined for Na$_3$Ni$_2$BiO$_6$ with $3d^8$ configuration. Such model indicates negligible small Kitaev interaction, but it predicts many properties, such as ground states and field effects, which are well consistent with measurements. Furthermore, we demonstrate that the heavy elements, Sb or Bi, located at the hollow sites of honeycomb lattice, do not contribute to emergence of Kitaev interaction through proximity, contradictory to common belief. The presently developed anisotropy method will be beneficial not only for computations but also for measurements. △ Less

Submitted 6 June, 2024; v1 submitted 5 June, 2024; originally announced June 2024.

Thermalization and Criticality on an Analog-Digital Quantum Simulator

Authors: Trond I. Andersen, Nikita Astrakhantsev, Amir H. Karamlou, Julia Berndtsson, Johannes Motruk, Aaron Szasz, Jonathan A. Gross, Alexander Schuckert, Tom Westerhout, Yaxing Zhang, Ebrahim Forati, Dario Rossi, Bryce Kobrin, Agustin Di Paolo, Andrey R. Klots, Ilya Drozdov, Vladislav D. Kurilovich, Andre Petukhov, Lev B. Ioffe, Andreas Elben, Aniket Rath, Vittorio Vitale, Benoit Vermersch, Rajeev Acharya, Laleh Aghababaie Beni , et al. (202 additional authors not shown)

Abstract: Understanding how interacting particles approach thermal equilibrium is a major challenge of quantum simulators. Unlocking the full potential of such systems toward this goal requires flexible initial state preparation, precise time evolution, and extensive probes for final state characterization. We present a quantum simulator comprising 69 superconducting qubits which supports both universal qua… ▽ More Understanding how interacting particles approach thermal equilibrium is a major challenge of quantum simulators. Unlocking the full potential of such systems toward this goal requires flexible initial state preparation, precise time evolution, and extensive probes for final state characterization. We present a quantum simulator comprising 69 superconducting qubits which supports both universal quantum gates and high-fidelity analog evolution, with performance beyond the reach of classical simulation in cross-entropy benchmarking experiments. Emulating a two-dimensional (2D) XY quantum magnet, we leverage a wide range of measurement techniques to study quantum states after ramps from an antiferromagnetic initial state. We observe signatures of the classical Kosterlitz-Thouless phase transition, as well as strong deviations from Kibble-Zurek scaling predictions attributed to the interplay between quantum and classical coarsening of the correlated domains. This interpretation is corroborated by injecting variable energy density into the initial state, which enables studying the effects of the eigenstate thermalization hypothesis (ETH) in targeted parts of the eigenspectrum. Finally, we digitally prepare the system in pairwise-entangled dimer states and image the transport of energy and vorticity during thermalization. These results establish the efficacy of superconducting analog-digital quantum processors for preparing states across many-body spectra and unveiling their thermalization dynamics. △ Less

Submitted 8 July, 2024; v1 submitted 27 May, 2024; originally announced May 2024.

Intrinsic localized excitons in MoSe$_2$/CrSBr heterostructures

Authors: Xinyue Huang, Zhigang Song, Yuchen Gao, Pingfan Gu, Kenji Watanabe, Takashi Taniguchi, Shiqi Yang, Zuxin Chen, Yu Ye

Abstract: We present a comprehensive investigation of optical properties in MoSe$_2$/CrSBr heterostructures, unveiling the presence of localized excitons represented by a new emission feature, X$^*$. We demonstrate through temperature- and power-dependent photoluminescence spectroscopy that X$^*$ originates from excitons confined by intrinsic defects within the CrSBr layer. The valley polarization of X$^*$… ▽ More We present a comprehensive investigation of optical properties in MoSe$_2$/CrSBr heterostructures, unveiling the presence of localized excitons represented by a new emission feature, X$^*$. We demonstrate through temperature- and power-dependent photoluminescence spectroscopy that X$^*$ originates from excitons confined by intrinsic defects within the CrSBr layer. The valley polarization of X$^*$ and trion peaks displays opposite polarity under a magnetic field, which closely correlates with the magnetic order of CrSBr. This is attributed to spin-dependent charge transfer mechanisms across the heterointerface, supported by density functional theory calculations revealing a type-II band alignment and spin-polarized band structures. Furthermore, the strong in-plane anisotropy of CrSBr induces unique polarization-dependent responses in MoSe$_2$ emissions. Our study highlights the crucial role of defects in shaping excitonic properties. It offers valuable insights into spectral-resolved proximity effects in van der Waals heterostructures between semiconductor and magnet, contributing to advancing spintronic and valleytronic devices. △ Less

Submitted 25 May, 2024; originally announced May 2024.

Comments: 9 pages, 4 figures

Graph Random Walk for Time-of-Flight Charge Mobilities

Authors: Zhongquan Chen, Pim van der Hoorn, Björn Baumeier

Abstract: We present a graph random walk (GRW) method for the study of charge transport properties of complex molecular materials in the time-of-flight regime. The molecules forming the material are represented by the vertices of a directed weighted graph, and the charge carriers are random walkers. The edge weights are rates for elementary jumping processes for a charge carrier to move along the edge and a… ▽ More We present a graph random walk (GRW) method for the study of charge transport properties of complex molecular materials in the time-of-flight regime. The molecules forming the material are represented by the vertices of a directed weighted graph, and the charge carriers are random walkers. The edge weights are rates for elementary jumping processes for a charge carrier to move along the edge and are determined from a combination of the energies of the involved vertices and an interaction strength. Exclusions are built into the random walk to account for the Pauli exclusion principle. In time-of-flight experiments, charge carriers are injected into the material and the time until they reach a collecting electrode is recorded. In this setting, our GRW approach allows direct evaluation of the expected hitting time of the collecting nodes in the graph in terms of a typically sparse, linear system, thereby avoiding numerically cumbersome and potentially fluctuations-prone methods based on explicit time evolution from solutions of a high-dimensional system of coupled ordinary differential equations (the Master Equation) or from kinetic Monte Carlo (KMC). We validate the GRW approach by conducting numerical studies of charge dynamics of single and multiple carriers in diffusive and drift-diffusive regimes using a surrogate lattice model. The surrogate model allows varying types and strengths of energetic disorder from the reference baseline. Comparison with results from the Master Equation confirms the theoretical equivalence of both approaches also in numerical implementations. We further show that KMC results show substantial deviations due to inadequate sampling. All in all, we find that the GRW method provides a powerful alternative to the more commonly used methods without sampling issues and with the benefit of making use of sparse matrix methods. △ Less

Submitted 24 May, 2024; originally announced May 2024.

MSC Class: 05C81; 05C90; 60J22; 60J74

High-field magnetoelectric coupling and successive magnetic transitions in Mn-doped polar antiferromagnet Ni3TeO6

Authors: J. H. Zhang, L. Lin, C. Dong, Y. T. Chang, J. F. Wang, C. L. Lu, P. Z. Chen, W. J. Zhai, G. Z. Zhou, L. Huang, Y. S. Tang, S. H. Zheng, M. F. Liu, X. H. Zhou, Z. B. Yan, J. -M. Liu

Abstract: Among the 3d transition metal ions doped polar Ni3TeO6, Mn-doped Ni3TeO6 has stimulated great interest due to its high magnetic ordering temperature and complex magnetic phases, but the mechanism of magnetoelectric (ME) coupling is far from understood. Herein we report our systematic investigation of the chemical control of magnetism, metamagnetic transition, and ME properties of Ni3-xMnxTeO6 sing… ▽ More Among the 3d transition metal ions doped polar Ni3TeO6, Mn-doped Ni3TeO6 has stimulated great interest due to its high magnetic ordering temperature and complex magnetic phases, but the mechanism of magnetoelectric (ME) coupling is far from understood. Herein we report our systematic investigation of the chemical control of magnetism, metamagnetic transition, and ME properties of Ni3-xMnxTeO6 single crystals in high magnetic field (H) up to 52 T. We present a previously unreported weak ferromagnetic behavior appeared in the ab plane below 9.5 K in addition to the incommensurate helical and commensurate collinear antiferromagnetic states. In the low-field region, a spin-flop type metamagnetic transition without any hysteresis occurs at Hc1 for H // c, while another metamagnetic transition accompanied with a change in electric polarization is observed at Hc2 in the high-field region both for H // c and H // ab above 30 K, which can be attributed to the sudden rotation of magnetic moments at Ni2 sites. The ME measurements reveal that a first-order ME effect is observed in the low-T and low-H regions, while a second-order ME coupling term appears above 30 K in the magnetic field range of Hc1 < H < Hc2 for H // c and H < Hc2 for H // ab, both becoming significant with increasing temperature. Eventually, they are dominated by the second-order ME effect near the antiferromagnetic transition temperature. The present work demonstrates that Ni3-xMnxTeO6 is an exotic magnetoelectric material compared with Ni3TeO6 and its derivatives, thereby providing insights to better understand the magnetism and ME coupling in Ni3TeO6 and its derivatives. △ Less

Submitted 29 May, 2024; v1 submitted 24 May, 2024; originally announced May 2024.

Comments: 30 pages with 8 figures

Journal ref: Phys. Rev. B 109, 184112 (2024)

Tunable magnetic anisotropy, Curie temperature and band alignment of two-dimensional ferromagnet VSiSnN4 via non-volatile ferroelectrical control

Authors: Kang-Jie Li, Ze-Quan Wang, Zu-Xin Chen, Yusheng Hou

Abstract: The emergence of multiferroic materials, which possess both ferromagnetic (FM) and ferroelectric (FE) properties, drive advancements in magnetoelectric applications and the next generation of spintronics. Based on first-principles calculations, we investigate an engineered two-dimensional multiferroic van der Waals heterostructures consisting of FM VSiSnN4 monolayer (ML) and fully hydrogenated FE… ▽ More The emergence of multiferroic materials, which possess both ferromagnetic (FM) and ferroelectric (FE) properties, drive advancements in magnetoelectric applications and the next generation of spintronics. Based on first-principles calculations, we investigate an engineered two-dimensional multiferroic van der Waals heterostructures consisting of FM VSiSnN4 monolayer (ML) and fully hydrogenated FE AlN bilayer. We find that the magnetic anisotropy of VSiSnN4 ML is tunable between out-of-plane and in-plane and a phase transition between semiconductor and metal is induced in VSiSnN4/AlN bilayer when the FE polarization direction of AlN bilayer is reversed. Surprisingly, when the FE polarization of AlN bilayer is upward, the Curie temperature of VSiSnN4/AlN bilayer can be significantly increased from 204K to 284K. Such non-volatile and tunable magnetic anisotropy, Curie temperature and band alignment in VSiSnN4/AlN multiferroic heterostructure are highly promising for future low-current operation of data storage and logic devices. △ Less

Submitted 15 May, 2024; originally announced May 2024.

Comments: 16 Pages, 4 figures, 1 table, accepted by APL

Journal ref: Appl. Phys. Lett. 124, 212405 (2024)

Enhancing atomic ordering, magnetic and transport properties of Mn2VGa Heusler alloy thin films toward negatively spin-polarized charge injection

Authors: Z. H. Li, H. Suto, V. Barwal, K. Masuda, T. T. Sasaki, Z. X. Chen, H. Tajiri, L. S. R. Kumara, T. Koganezawa, K. Amemiya, S. Kokado, K. Hono, Y. Sakuraba

Abstract: Magnetic materials with negative spin polarization have attracted attention for their potential to increase the design freedom of spintronic devices. This study investigated the effects of off-stoichiometry on the atomic ordering, microstructure, and magneto-transport properties in Mn2+xV1-xGa (x = -0.2, 0, +0.2, +0.4) Heusler alloy films, which are predicted to have large negative spin polarizati… ▽ More Magnetic materials with negative spin polarization have attracted attention for their potential to increase the design freedom of spintronic devices. This study investigated the effects of off-stoichiometry on the atomic ordering, microstructure, and magneto-transport properties in Mn2+xV1-xGa (x = -0.2, 0, +0.2, +0.4) Heusler alloy films, which are predicted to have large negative spin polarization derived from a pseudo band gap in the majority spin channel. The Mn2+xV1-xGa films epitaxially grown on MgO(001) substrates exhibits variations of B2 and L21 order with the Mn concentration. A high-quality L21 ordered film was achieved in the Mn-rich composition (x = +0.2) with B2 and L21 order parameters of 0.97 and 0.86, respectively, and a saturation magnetization of 1.4 μB/f.u, which agrees the Slater-Pauling rule. Scanning transmission electron microscopy observations showed that B2 and L21 phases coexist in Mn-poor and stoichiometric films, while the L21 phase is dominant in the Mn-rich film with small amounts of Mn-V and Mn-Ga disorders, as revealed by laboratory and anomalous X-ray diffraction. Combined first-principles calculations and anisotropic magnetoresistance analysis confirm that the addition of excess Mn preserves the high spin polarization by suppressing the formation of detrimental antisites of V atoms occupying Mn sites. Therefore, the Mn-rich composition is promising for negatively spin-polarized charge injection in Mn2VGa-based spintronic applications. △ Less

Submitted 10 May, 2024; originally announced May 2024.

Robust field-free switching using large unconventional spin-orbit torque in an all-van der Waals heterostructure

Authors: Yiyang Zhang, Xiaolin Ren, Ruizi Liu, Zehan Chen, Xuezhao Wu, Jie Pang, Wei Wang, Guibin Lan, Kenji Watanabe, Takashi Taniguchi, Youguo Shi, Guoqiang Yu, Qiming Shao

Abstract: The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in… ▽ More The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit torque (SOT) exerted by the out-of-plane polarized spin current to enable deterministic magnetization switching and enhance the switching efficiency. However, in all-vdW heterostructures, large unconventional SOT remains elusive and the robustness of the field-free switching against external magnetic field hasn't been examined, which hinder further applications. Here we demonstrate the field-free switching in an all-vdW heterostructure combining a type-II Weyl semimetal TaIrTe4 and above-room-temperature ferromagnet Fe3GaTe2. The fully field-free switching can be achieved at 2.56 x 10^10 A per m2 at 300K and a large SOT efficiency of the out-of-plane polarized spin current generated by TaIrTe4 is determined to be 0.37. Moreover, we find that the switching polarity cannot be changed until the external in-plane magnetic field reaches 252mT, indicating a robust switching against the magnetic field. The numerical simulation suggests the large unconventional SOT reduces the switching current density and enhances the robustness of the switching. Our work shows that all-vdW heterostructures are promising candidates for future highly efficient and stable SOT-based devices. △ Less

Submitted 10 May, 2024; originally announced May 2024.

MatterSim: A Deep Learning Atomistic Model Across Elements, Temperatures and Pressures

Authors: Han Yang, Chenxi Hu, Yichi Zhou, Xixian Liu, Yu Shi, Jielan Li, Guanzhi Li, Zekun Chen, Shuizhou Chen, Claudio Zeni, Matthew Horton, Robert Pinsler, Andrew Fowler, Daniel Zügner, Tian Xie, Jake Smith, Lixin Sun, Qian Wang, Lingyu Kong, Chang Liu, Hongxia Hao, Ziheng Lu

Abstract: Accurate and fast prediction of materials properties is central to the digital transformation of materials design. However, the vast design space and diverse operating conditions pose significant challenges for accurately modeling arbitrary material candidates and forecasting their properties. We present MatterSim, a deep learning model actively learned from large-scale first-principles computatio… ▽ More Accurate and fast prediction of materials properties is central to the digital transformation of materials design. However, the vast design space and diverse operating conditions pose significant challenges for accurately modeling arbitrary material candidates and forecasting their properties. We present MatterSim, a deep learning model actively learned from large-scale first-principles computations, for efficient atomistic simulations at first-principles level and accurate prediction of broad material properties across the periodic table, spanning temperatures from 0 to 5000 K and pressures up to 1000 GPa. Out-of-the-box, the model serves as a machine learning force field, and shows remarkable capabilities not only in predicting ground-state material structures and energetics, but also in simulating their behavior under realistic temperatures and pressures, signifying an up to ten-fold enhancement in precision compared to the prior best-in-class. This enables MatterSim to compute materials' lattice dynamics, mechanical and thermodynamic properties, and beyond, to an accuracy comparable with first-principles methods. Specifically, MatterSim predicts Gibbs free energies for a wide range of inorganic solids with near-first-principles accuracy and achieves a 15 meV/atom resolution for temperatures up to 1000K compared with experiments. This opens an opportunity to predict experimental phase diagrams of materials at minimal computational cost. Moreover, MatterSim also serves as a platform for continuous learning and customization by integrating domain-specific data. The model can be fine-tuned for atomistic simulations at a desired level of theory or for direct structure-to-property predictions, achieving high data efficiency with a reduction in data requirements by up to 97%. △ Less

Submitted 10 May, 2024; v1 submitted 8 May, 2024; originally announced May 2024.

Circularly polarized light irradiated ferromagnetic MnBi$_2$Te$_4$: the long-sought ideal Weyl semimetal

Authors: Shuai Fan, Shengpu Huang, Zhuo Chen, Fangyang Zhan, Xian-Yong Ding, Da-Shuai Ma, Rui Wang

Abstract: The interaction between light and non-trivial energy band topology allows for the precise manipulation of topological quantum states, which has attracted intensive interest in condensed matter physics. In this work, using first-principles calculations, we studied the topological transition of ferromagnetic (FM) MnBi$_2$Te$_4$ upon irradiation with circularly polarized light (CPL). We revealed that… ▽ More The interaction between light and non-trivial energy band topology allows for the precise manipulation of topological quantum states, which has attracted intensive interest in condensed matter physics. In this work, using first-principles calculations, we studied the topological transition of ferromagnetic (FM) MnBi$_2$Te$_4$ upon irradiation with circularly polarized light (CPL). We revealed that the MnBi$_2$Te$_4$ can be driven from an FM insulator to a Weyl semimetal with a minimum number of Weyl points, i.e., two Weyl points in systems without time-reversal symmetry. More importantly, in FM MnBi$_2$Te$_4$ with out-of-plane easy magnetization axis, we found that the band dispersion of the WP evolves from Type-II to Type-III and finally to Type-I when the light intensity increases. Moreover, we show that the profile of the characteristic Fermi arc of Weyl semimetal phase is sensitive to changes in light intensity, which enables efficient manipulation of the Fermi arc length of FM MnBi$_2$Te$_4$ in experiments. In addition, for FM MnBi$_2$Te$_4$ with in-plane easy magnetization axis, the system becomes a type I Weyl semimetal under CPL irradiation. With controllable band dispersion, length of Fermi arc, and minimum number of WPs, our results indicate that CPL-irradiated FM MnBi$_2$Te$_4$ is an ideal platform to study novel transport phenomena in Weyl semimetals with distinct band dispersion. △ Less

Submitted 7 May, 2024; originally announced May 2024.

Modulating trap properties by Cr3+-doping in Zn2SiO4: Mn2+ nano phosphor for optical information storage

Authors: Xin Yi, Hui Liu, Yihuan Wang, Junjie Chen, Zhanglin Chen, Yuzhen Wang, Xuanyi Yuan, Kaiming Zhu

Abstract: Photo stimulated luminescent materials are one of the most attractive alternatives for next generation optical information storage technologies. However, there are still some challenges in regulating appropriate energy levels in luminescent materials for optical information storage. Herein, a green emission nanophosphor Zn2SiO4: Cr3+, Mn2+ with the trap depth of 1.05 eV, fulfilling the requirement… ▽ More Photo stimulated luminescent materials are one of the most attractive alternatives for next generation optical information storage technologies. However, there are still some challenges in regulating appropriate energy levels in luminescent materials for optical information storage. Herein, a green emission nanophosphor Zn2SiO4: Cr3+, Mn2+ with the trap depth of 1.05 eV, fulfilling the requirements for optical information storage, was fabricated for the first time through the solution combustion method and subsequent heat treatment at 1000 degree centigrade for 2h. The crystal structure, micromorphology, photoluminescence (PL), photoluminescence excitation (PLE), and afterglow properties of Zn2SiO4: xCr3+, yMn2+ were studied systematically. By applying the strategy of trap depth engineering, high trap density with proper trap depth was observed when Cr3+ ions were introduced into Zn2SiO4: Mn2+. Thermoluminescence (TL) glow curve analysis through the initial rise (IR) method was conducted to gain some insight into the information of traps. As proof of application, information storage was experimentally achieved by choosing 275 nm illumination for information writing and 980 nm NIR excitation for information reading. The results indicate that Zn2SiO4: Cr3+, Mn2+ phosphor holds promise for potential applications in the field of optical information storage. △ Less

Submitted 6 May, 2024; originally announced May 2024.

Insights into the defect-driven heterogeneous structural evolution of Ni-rich layered cathode in lithium-ion batteries

Authors: Zhongyuan Huang, Ziwei Chen, Maolin Yang, Mihai Chu, Zenan Li, Sihao Deng, Lunhua He, Lei Jin, Rafal E. Dunin-Borkowski, Rui Wang, Jun Wang, Tingting Yang, Yinguo Xiao

Abstract: Recently, considerable efforts have been made on research and improvement for Ni-rich lithium-ion batteries to meet the demand from vehicles and grid-level large-scale energy storage. Development of next-generation high-performance lithium-ion batteries requires a comprehensive understanding on the underlying electrochemical mechanisms associated with its structural evolution. In this work, advanc… ▽ More Recently, considerable efforts have been made on research and improvement for Ni-rich lithium-ion batteries to meet the demand from vehicles and grid-level large-scale energy storage. Development of next-generation high-performance lithium-ion batteries requires a comprehensive understanding on the underlying electrochemical mechanisms associated with its structural evolution. In this work, advanced operando neutron diffraction and four-dimensional scanning transmission electron microscopy techniques are applied to clarify the structural evolution of electrodes in two distinct full cells with identical LiNi0.8Co0.1Mn0.1O2 cathode but different anode counterparts. It is found that both of cathodes in two cells exhibit non-intrinsic two-phase-like behavior at the early charge stage, indicating selective Li+ extraction from cathodes. But the heterogeneous evolution of cathode is less serious with graphite-silicon blended anode than that with graphite anode due to the different delithiation rate. Moreover, it is revealed that the formation of heterogeneous structure is led by the distribution of defects including Li/Ni disordering and microcracks, which should be inhibited by assembling appropriate anode to avoid potential threaten on cell performance. The present work unveils the origin of inhomogeneity in Ni-rich lithium-ion batteries and highlights the significance of kinetics control in electrodes for batteries with higher capacity and longer life. △ Less

Submitted 23 April, 2024; originally announced April 2024.

Comments: 29 pages and 5 figures for manuscript; 30 pages, 14 figures and 4 tables for supplementary information

Topology-engineered orbital Hall effect in two-dimensional ferromagnets

Authors: Zhiqi Chen, Runhan Li, Yingxi Bai, Ning Mao, Mahmoud Zeer, Dongwook Go, Ying Dai, Baibiao Huang, Yuriy Mokrousov, Chengwang Niu

Abstract: Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrat… ▽ More Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi$_2$Te$_4$ as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work we open up new possibilities for innovative applications in topological spintronics and orbitronics. △ Less

Submitted 11 April, 2024; originally announced April 2024.

Comments: 4 figures

Maximal quantum interaction between free electrons and photons

Authors: Zetao Xie, Zeling Chen, Hao Li, Qinghui Yan, Hongsheng Chen, Xiao Lin, Ido Kaminer, Owen D. Miller, Yi Yang

Abstract: The emerging field of free-electron quantum optics enables electron-photon entanglement and holds the potential for generating nontrivial photon states for quantum information processing. Although recent experimental studies have entered the quantum regime, rapid theoretical developments predict that qualitatively unique phenomena only emerge beyond a certain interaction strength. It is thus perti… ▽ More The emerging field of free-electron quantum optics enables electron-photon entanglement and holds the potential for generating nontrivial photon states for quantum information processing. Although recent experimental studies have entered the quantum regime, rapid theoretical developments predict that qualitatively unique phenomena only emerge beyond a certain interaction strength. It is thus pertinent to identify the maximal electron-photon interaction strength and the materials, geometries, and particle energies that enable one to approach it. We derive an upper limit to the quantum vacuum interaction strength between free electrons and single-mode photons, which illuminates the conditions for the strongest interaction. Crucially, we obtain an explicit energy selection recipe for electrons and photons to achieve maximal interaction at arbitrary separations and identify two optimal regimes favoring either fast or slow electrons over those with intermediate velocities. We validate the limit by analytical and numerical calculations on canonical geometries and provide near-optimal designs indicating the feasibility of strong quantum interactions. Our findings offer fundamental intuition for maximizing the quantum interaction between free electrons and photons and provide practical design rules for future experiments on electron-photon and electron-mediated photon-photon entanglement. They should also enable the evaluation of key metrics for applications such as the maximum power of free-electron radiation sources and the maximum acceleration gradient of dielectric laser accelerators. △ Less

Submitted 3 April, 2024; v1 submitted 30 March, 2024; originally announced April 2024.

Exploring the Berezinskii-Kosterlitz-Thouless Transition in a Two-dimensional Dipolar Bose Gas

Authors: Yifei He, Ziting Chen, Haoting Zhen, Mingchen Huang, Mithilesh K Parit, Gyu-Boong Jo

Abstract: Long-range and anisotropic dipolar interactions induce complex order in quantum systems. It becomes particularly interesting in two-dimension (2D), where the superfluidity with quasi-long-range order emerges via Berezinskii-Kosterlitz-Thouless (BKT) mechanism, which still remains elusive with dipolar interactions. Here, we observe the BKT transition from a normal gas to the superfluid phase in a q… ▽ More Long-range and anisotropic dipolar interactions induce complex order in quantum systems. It becomes particularly interesting in two-dimension (2D), where the superfluidity with quasi-long-range order emerges via Berezinskii-Kosterlitz-Thouless (BKT) mechanism, which still remains elusive with dipolar interactions. Here, we observe the BKT transition from a normal gas to the superfluid phase in a quasi-2D dipolar Bose gas of erbium atoms. Controlling the orientation of dipoles, we characterize the transition point by monitoring extended coherence and measuring the equation of state. This allows us to gain a systematic understanding of the BKT transition based on an effective short-range description of dipolar interaction in 2D. Additionally, we observe anisotropic density fluctuations and non-local effects in the superfluid regime, which establishes the dipolar nature of the 2D superfluid. Our results lay the ground for understanding the behavior of dipolar bosons in 2D and open up opportunities for examining complex orders in a dipolar superfluid. △ Less

Submitted 27 March, 2024; originally announced March 2024.

Comments: 8 pages, 4 figues, supplementary information

In situ growth of hydrophilic nickel-cobalt layered double hydroxides nanosheets on biomass waste-derived porous carbon for high-performance hybrid supercapacitors

Authors: Yuchen Wang, Yaoyu Liu, Zuo Chen, Man Zhang, Biying Liu, Zhenhao Xu, Kai Yan

Abstract: Rational design and cost-effective fabrication of layered double hydroxides (LDHs) nanosheets with extraordinary electrochemical performance is a key challenge for hybrid supercapacitors (HSCs). Herein, we report a facile in situ growth methodology to eco-friendly synthesize hydrophilic NiCo-LDHs nanosheets on biomass waste-derived porous carbon (BC) for robust high-performance HSC cathode. The in… ▽ More Rational design and cost-effective fabrication of layered double hydroxides (LDHs) nanosheets with extraordinary electrochemical performance is a key challenge for hybrid supercapacitors (HSCs). Herein, we report a facile in situ growth methodology to eco-friendly synthesize hydrophilic NiCo-LDHs nanosheets on biomass waste-derived porous carbon (BC) for robust high-performance HSC cathode. The in situ growth process under ultrasonication realizes the rational arrangement of NiCo-LDHs nanosheets on the surface of BC, which effectively increases the specific surface area, promotes the electronic conductivity and enhances the wettability of NiCo-LDHs nanosheets without affecting their thickness values. With the beneficial effects of ultrathin thickness of LDHs nanosheets (6.20 nm), large specific surface area (2324.1 m2 g-1), low charge transfer resistance (1.65 ohm), and high wettability with electrolyte (34-35 degree), the obtained Ni2Co1-LDHs/BC50 electrode possesses an ultra-high specific capacitance of 2390 F g-1 (956 C g-1) at 1 A g-1, which is superior to most reported values. Furthermore, an assembled Ni2Co1-LDHs/BC50//YP-80F HSC delivers a maximum specific energy of 52.47 Wh kg-1 at 375 W kg-1, and maintains a high capacitance retention of 75.9% even after 4000 cycles. This work provides a facile approach to fabricate LDHs nanosheets based cathode materials for high-performance HSCs. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Green fabrication of nickel-iron layered double hydroxides nanosheets efficient for the enhanced capacitive performance

Authors: Yuchen Wang, Zuo Chen, Man Zhang, Yaoyu Liu, Huixia Luo, Kai Yan

Abstract: Rational synthesis of robust layered double hydroxides (LDHs) nanosheets for high-energy supercapacitors is full of challenges. Herein, we reported an ultrasonication-assisted strategy to eco-friendly fabricate NiFe-LDHs nanosheets for the enhanced capacitive behavior. The experimental results combined with different advanced characterization tools document that the utilization of ultrasonication… ▽ More Rational synthesis of robust layered double hydroxides (LDHs) nanosheets for high-energy supercapacitors is full of challenges. Herein, we reported an ultrasonication-assisted strategy to eco-friendly fabricate NiFe-LDHs nanosheets for the enhanced capacitive behavior. The experimental results combined with different advanced characterization tools document that the utilization of ultrasonication has a profound effect on the morphology and thickness of the as-obtained NiFe-LDHs, alternatively affecting the capacitive behavior. It shows that NiFe-LDHs nanosheets prepared with 2-h ultrasonic treatments display the exceptional capacitive performance because of the synergetic effect of ultrathin thickness, large specific surface area, and high mesoporous volume. The maximum specific capacitance of Ni3Fe1-LDHs nanosheets with the thickness of 7.39 nm and the specific surface area of 77.16 m2 g-1 reached 1923 F g-1, which is competitive with most previously reported values. In addition, the maximum specific energy of the assembled NiFe-LDHs//AC asymmetric supercapacitor achieved 49.13 Wh kg-1 at 400 W kg-1. This work provides a green technology to fabricate LDHs nanosheets, and offers deep insights for understanding the relationship between the morphology/structure and capacitive behavior of LDHs nanosheets, which is helpful for achieving high-performance LDHs-based electrode materials. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Exploring Fermi Surface Nesting and the Nature of Heavy Quasiparticles in the Spin-Triplet Superconductor Candidate CeRh$_2$As$_2$

Authors: Bo Chen, Hao Liu, Qi-Yi Wu, Chen Zhang, Xue-Qing Ye, Yin-Zou Zhao, Jiao-Jiao Song, Xin-Yi Tian, Ba-Lei Tan, Zheng-Tai Liu, Mao Ye, Zhen-Hua Chen, Yao-Bo Huang, Da-Wei Shen, Ya-Hua Yuan, Jun He, Yu-Xia Duan, Jian-Qiao Meng

Abstract: In this study, we investigate the electronic structure of a spin-triplet superconductor candidate CeRh$_2$As$_2$ using high-resolution angle-resolved photoemission spectroscopy and density functional theory calculations. Notably, Fermi surface nesting hints at connections to magnetic excitation or quadrupole density wave phenomena, elucidating the superconducting mechanisms. Measured band structur… ▽ More In this study, we investigate the electronic structure of a spin-triplet superconductor candidate CeRh$_2$As$_2$ using high-resolution angle-resolved photoemission spectroscopy and density functional theory calculations. Notably, Fermi surface nesting hints at connections to magnetic excitation or quadrupole density wave phenomena, elucidating the superconducting mechanisms. Measured band structures reveal primarily localized 4f electrons, with minor itinerant contributions. Additionally, a transition from localized to itinerant behavior and significant c-f hybridization anisotropy underscore the role of f-electrons in shaping electronic properties. These findings deepen our understanding of CeRh$_2$As$_2$'s unconventional superconductivity and magnetism. Further exploration promises advances in superconductivity research. △ Less

Submitted 20 March, 2024; originally announced March 2024.

Comments: 6 pages, 3 figures

Neural-network density functional theory based on variational energy minimization

Authors: Yang Li, Zechen Tang, Zezhou Chen, Minghui Sun, Boheng Zhao, He Li, Honggeng Tao, Zilong Yuan, Wenhui Duan, Yong Xu

Abstract: Deep-learning density functional theory (DFT) shows great promise to significantly accelerate material discovery and potentially revolutionize materials research. However, current research in this field primarily relies on data-driven supervised learning, making the developments of neural networks and DFT isolated from each other. In this work, we present a theoretical framework of neural-network… ▽ More Deep-learning density functional theory (DFT) shows great promise to significantly accelerate material discovery and potentially revolutionize materials research. However, current research in this field primarily relies on data-driven supervised learning, making the developments of neural networks and DFT isolated from each other. In this work, we present a theoretical framework of neural-network DFT, which unifies the optimization of neural networks with the variational computation of DFT, enabling physics-informed unsupervised learning. Moreover, we develop a differential DFT code incorporated with deep-learning DFT Hamiltonian, and introduce algorithms of automatic differentiation and backpropagation into DFT, demonstrating the capability of neural-network DFT. The physics-informed neural-network architecture not only surpasses conventional approaches in accuracy and efficiency, but also offers a new paradigm for developing deep-learning DFT methods. △ Less

Submitted 19 July, 2024; v1 submitted 17 March, 2024; originally announced March 2024.

Comments: Phys. Rev. Lett. accepted

Cuprate-like Electronic Structures in Infinite-Layer Nickelates with Substantial Hole Dopings

Authors: X. Ding, Y. Fan, X. X. Wang, C. H. Li, Z. T. An, J. H. Ye, S. L. Tang, M. Y. N. Lei, X. T. Sun, N. Guo, Z. H. Chen, S. Sangphet, Y. L. Wang, H. C. Xu, R. Peng, D. L. Feng

Abstract: The superconducting infinite-layer (IL) nickelates offer a new platform for investigating the long-standing problem of high-temperature superconductivity. Many models were proposed to understand its superconducting mechanisms based on the calculated electronic structure, and the multiple Fermi surfaces and multiple orbitals involved create complications and controversial conclusions. Over the past… ▽ More The superconducting infinite-layer (IL) nickelates offer a new platform for investigating the long-standing problem of high-temperature superconductivity. Many models were proposed to understand its superconducting mechanisms based on the calculated electronic structure, and the multiple Fermi surfaces and multiple orbitals involved create complications and controversial conclusions. Over the past 5 years, the lack of direct measurements of the electronic structure has hindered the understanding of nickelate superconductors. Here we fill this gap by directly resolving the electronic structures of the parent compound LaNiO$_2$ and superconducting La$_{0.8}$Ca$_{0.2}$NiO$_2$ using angle-resolved photoemission spectroscopy (ARPES). We find that their Fermi surfaces consist of a quasi-two-dimensional (quasi-2D) hole pocket and a three-dimensional (3D) electron pocket at the Brillouin zone corner, whose volumes change upon Ca doping. The Fermi surface topology and band dispersion of the hole pocket closely resemble those observed in hole-doped cuprates. However, the cuprate-like band exhibits significantly higher hole doping in superconducting La$_{0.8}$Ca$_{0.2}$NiO$_2$ compared to superconducting cuprates, highlighting the disparities in the electronic states of the superconducting phase. Our observations highlight the novel aspects of the IL nickelates, and pave the way toward the microscopic understanding of the IL nickelate family and its superconductivity. △ Less

Submitted 5 June, 2024; v1 submitted 12 March, 2024; originally announced March 2024.

Comments: 12 pages, 4 figures

Journal ref: National Science Review, nwae194 (2024)

Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping

Authors: Chao Zhou, Liyang Ma, Yanpeng Feng, Chang-Yang Kuo, Yu-Chieh Ku, Cheng-En Liu, Xianlong Cheng, Jingxuan Li, Yangyang Si, Haoliang Huang, Yan Huang, Hongjian Zhao, Chun-Fu Chang, Sujit Das, Shi Liu, Zuhuang Chen

Abstract: In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also… ▽ More In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor

Authors: Zailan Zhang, Jiuxiang Zhang, Gangqiang Zhou, Jiyuan Xu, Xiao Zhang, Hamid Oughaddou, Weiyan Qi, Evangelos Papalazarou, Luca Perfetti, Zhesheng Chen, Azzedine Bendounan, Marino Marsi

Abstract: Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction ban… ▽ More Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction band, whose details are still unclear. In this work, we investigated the properties of occupied and photoexcited states of GeAs in energy-momentum space, by combining scanning tunneling spectroscopy (STS), angle-resolved photoemission spectroscopy (ARPES) and time-resolved ARPES. We found that, GeAs is an indirect gap semiconductor having an electronic gap of 0.8 eV, for which the conduction band minimum (CBM) is located at the Gamma point while the valence band maximum (VBM) is out of Gamma. A Stark broadening of the valence band is observed immediately after photoexcitation, which can be attributed to the effects of the electrical field at the surface induced by inhomogeneous screening. Moreover, the hot electrons relaxation time of 1.56 ps down to the CBM which is dominated from both inter-valley and intra-valley coupling. Besides their relevance for our understanding of GeAs, these findings present general interest for the design on high performance thermoelectric and optoelectronic devices based on 2D semiconductors. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces

Authors: Xu Zhang, Tongshuai Zhu, Shuai Zhang, Zhongqiang Chen, Anke Song, Chong Zhang, Rongzheng Gao, Wei Niu, Yequan Chen, Fucong Fei, Yilin Tai, Guoan Li, Binghui Ge, Wenkai Lou, Jie Shen, Haijun Zhang, Kai Chang, Fengqi Song, Rong Zhang, Xuefeng Wang

Abstract: Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and e… ▽ More Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and epitaxial CaZrO3/KTaO3 (111) interfaces. The nonreciprocal transport coefficient undergoes a giant increase with three orders of magnitude up to 105 A-1T-1. Furthermore, a strong Rashba spin-orbit coupling effective field of 14.7 T is achieved with abundant high-mobility photocarriers under ultraviolet illumination, which accounts for the giant enhancement of nonreciprocal transport coefficient. Our first-principles calculations further disclose the stronger Rashba spin-orbit coupling strength and the longer relaxation time in the photocarrier excitation process, bridging the light-property quantitative relationship. Our work provides an alternative pathway to boost nonreciprocal transport in noncentrosymmetric systems and facilitates the promising applications in opto-rectification devices and spin-orbitronic devices. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Comments: 38 pages, 17 figures

Journal ref: Nature Communications (2024)

Pseudospin Polarization of Composite Fermions under Uniaxial Strain

Authors: Shuai Yuan, Jiaojie Yan, Ke Huang, Zhimou Chen, Haoran Fan, L. N. Pfeiffer, K. W. West, Yang Liu, Xi Lin

Abstract: A two dimensional system with extra degrees of freedom, such as spin and valley, is of great interest in the study of quantum phase transitions. The critical condition when a transition between different multicomponent fractional quantum Hall states appears is one of the very few junctions for many body problems between theoretical calculations and experiments. In this work, we present that uniaxi… ▽ More A two dimensional system with extra degrees of freedom, such as spin and valley, is of great interest in the study of quantum phase transitions. The critical condition when a transition between different multicomponent fractional quantum Hall states appears is one of the very few junctions for many body problems between theoretical calculations and experiments. In this work, we present that uniaxial strain induces pseudospin transitions of composite fermions in a two-dimensional hole gas. Determined from transport behavior, strain along <111> effectively changes pseudospin energy levels. We deduce that diagonal strain dominates these variations. Our experiment provides a wedge for manipulating two dimensional interacting systems mechanically. △ Less

Submitted 6 March, 2024; originally announced March 2024.

Comments: 12 pages with 4 figures and 9 pages with 4 figures

Journal ref: Phys. Rev. B 109, L081110 (2024)

Shear-enhanced Liquid Crystal Spinning of Conjugated Polymer Fibers

Authors: Hao Jiang, Chi-yuan Yang, Deyu Tu, Zhu Chen, Wei Huang, Liang-wen Feng, Hengda Sun, Hongzhi Wang, Simone Fabiano, Meifang Zhu, Gang Wang

Abstract: Conjugated polymer fibers can be used to manufacture various soft fibrous optoelectronic devices, significantly advancing wearable devices and smart textiles. Recently, conjugated polymer-based fibrous electronic devices have been widely used in energy conversion, electrochemical sensing, and human-machine interaction. However, the insufficient mechanical properties of conjugated polymer fibers, t… ▽ More Conjugated polymer fibers can be used to manufacture various soft fibrous optoelectronic devices, significantly advancing wearable devices and smart textiles. Recently, conjugated polymer-based fibrous electronic devices have been widely used in energy conversion, electrochemical sensing, and human-machine interaction. However, the insufficient mechanical properties of conjugated polymer fibers, the difficulty in solution processing semiconductors with rigid main chains, and the challenges in large-scale continuous production have limited their further development in the wearable field. We regulated the pi - pi stacking interactions in conjugated polymer molecules below their critical liquid crystal concentration by applying fluid shear stress. We implemented secondary orientation, leading to the continuous fabrication of anisotropic semiconductor fibers. This strategy enables conjugated polymers with rigid backbones to synergistically enhance the mechanical and semiconductor properties of fibers through liquid crystal spinning. Furthermore, conjugated polymer fibers, exhibiting excellent electrochemical performance and high mechanical strength (600 MPa) that essentially meet the requirements for industrialized preparation, maintain stability under extreme temperatures, radiation, and chemical reagents. Lastly, we have demonstrated logic circuits using semiconductor fiber organic electrochemical transistors, showcasing its application potential in the field of wearable fabric-style logic processing. These findings confirm the importance of the liquid crystalline state and solution control in optimizing the performance of conjugated polymer fibers, thus paving the way for developing a new generation of soft fiber semiconductor devices. △ Less

Submitted 6 March, 2024; v1 submitted 5 March, 2024; originally announced March 2024.

Semi-vortex solitons and their excited states in spin-orbit-coupled binary bosonic condensates

Authors: Haiming Deng, Jinqing Li, Zhaopin Chen, Yaohui Liu, Dong Liu, Chunzhi Jiang, Chao Kong, Boris A. Malomed

Abstract: It is known that two-dimensional two-component fundamental solitons of the semi-vortex (SV) type, with vorticities $(s_{+},s_{-})=(0,1)$ in their components, are stable ground states (GSs) in the spin-orbit-coupled (SOC) binary Bose-Einstein condensate with the contact self-attraction acting in both components, in spite of the possibility of the critical collapse in the system. However, excited st… ▽ More It is known that two-dimensional two-component fundamental solitons of the semi-vortex (SV) type, with vorticities $(s_{+},s_{-})=(0,1)$ in their components, are stable ground states (GSs) in the spin-orbit-coupled (SOC) binary Bose-Einstein condensate with the contact self-attraction acting in both components, in spite of the possibility of the critical collapse in the system. However, excited states(ESs) of the SV solitons, with the vorticity set $(s_{+},s_{-})=( S_{+},S_{+}+1)$ and $S_{+}=1,2,3,...$, are unstable in the same system. We construct ESs of SV solitons in the SOC system with opposite signs of the self-interaction in the two components. The main finding is stability of the ES-SV solitons, with the extra vorticity (at least) up to $S_{+}=6$. The threshold value of the norm for the onset of the critical collapse, $N_{\mathrm{thr}}$, in these excited states is higher than the commonly known critical value, $N_{c}\approx 5.85$,associated with the single-component Townes solitons, $N_{\mathrm{thr}}$ increasing with the growth of $S_{+}$. A velocity interval for stable motion of the GS-SV solitons is found too. The results suggest a solution for the challenging problem of the creation of stable vortex solitons with high topological charges. △ Less

Submitted 12 May, 2024; v1 submitted 3 March, 2024; originally announced March 2024.

Comments: To be published in Physical Review E

Sustained Robust Exciton Emission in Suspended Monolayer WSe_2 within the Low Carrier Density Regime for Quantum Emitter Applications

Authors: Zheng-Zhe Chen, Chiao-Yun Chang, Ya-Ting Tsai, Po-Cheng Tsai, Shih-Yen Lin, Min-Hsiung Shih

Abstract: The development of semiconductor optoelectronic devices is moving toward low power consumption and miniaturization, especially for high-efficiency quantum emitters. However, most of these quantum sources work at low carrier density region, where the Shockley-Read-Hall recombination may dominant and seriously reduce the emission efficiency. In order to diminish the affection of carrier trapping and… ▽ More The development of semiconductor optoelectronic devices is moving toward low power consumption and miniaturization, especially for high-efficiency quantum emitters. However, most of these quantum sources work at low carrier density region, where the Shockley-Read-Hall recombination may dominant and seriously reduce the emission efficiency. In order to diminish the affection of carrier trapping and sustain a strong photoluminescence emission under low power pumping condition, we investigated on the influence of Suspending to monolayered tungsten diselenide, novel two-dimensional quantum material. Not only the PL intensity, but also the fundamental photoluminescence quantum yield has exhibited a huge, order-scale enhancement through suspending, even surprisingly, we found the PLQY improvement revealed far significantly under small pumping power and came out an exponential increase tendency toward even lower carrier density region. With its strong excitonic effect, suspended WSe_2 offers a solution to reduce carrier trapping and participate in non-radiative processes. Moreover, in the low-power range where SRH recombination dominates, suspended WSe_2 exhibited remarkably higher percentage of excitonic radiation compared to contacted WSe_2. Herein, we quantitatively demonstrate the significance of suspended WSe_2 monolayer at low carrier density region, highlighting its potential for developing compact, low-power quantum emitters in the future. △ Less

Submitted 27 February, 2024; originally announced February 2024.

The influence of Structural Dynamics in Two-Dimensional Hybrid Organic-Inorganic Perovskites on their Photoluminescence Efficiency -- Neutron scattering analysis

Authors: Haritha Sindhu Rajeev, Xiao Hu, Wei-Liang Chen, Depei Zhang, Tianran Chen, Maiko Kofu, Ryoichi Kajimoto, Mitsutaka Nakamura, Alexander Z. Chen, Mina Yoon, Yu-Ming Chang, Joshua J. Choi, Seung-Hun Lee

Abstract: Two-dimensional hybrid organic-inorganic perovskites (HOIPs) have emerged as promising materials for light-emitting diode applications. In this study, by using time-of-flight neutron spectroscopy we identified and quantitatively separated the lattice vibrational and molecular rotational dynamics of two perovskites, butylammonium lead iodide $(\text{BA})_{2}\text{PbI}_{4}$ and phenethyl-ammonium le… ▽ More Two-dimensional hybrid organic-inorganic perovskites (HOIPs) have emerged as promising materials for light-emitting diode applications. In this study, by using time-of-flight neutron spectroscopy we identified and quantitatively separated the lattice vibrational and molecular rotational dynamics of two perovskites, butylammonium lead iodide $(\text{BA})_{2}\text{PbI}_{4}$ and phenethyl-ammonium lead iodide $\text{(PEA)}_{2}\text{PbI}_{4}$. By examining the corresponding temperature dependence, we found that the lattice vibrations, as evidenced by neutron spectra, are consistent with the lattice dynamics obtained from Raman scattering. We revealed that the rotational dynamics of organic molecules in these materials tend to suppress their photoluminescence quantum yield while the vibrational dynamics did not show predominant correlations with their optoelectronic properties. This study proposes that the rotational motions of the polarized molecules could significantly interrupt the exciton binding energy potential, cause the exciton dissociations, enhance the non-radiative recombination rates, and hence reduce the photoluminescence yield. These findings provide a deeper understanding of the fundamental interactions in 2D HOIPs and may guide the design of more efficient light-emitting materials for advanced technological applications. △ Less

Submitted 23 February, 2024; originally announced February 2024.

Unexpected versatile electrical transport behaviors of ferromagnetic nickel films

Authors: Kai-Xuan Zhang, Hanshu Xu, Jihoon Keum, Xiangqi Wang, Meizhuang Liu, Zuxin Chen

Abstract: Perpendicular magnetic anisotropy (PMA) of magnets is paramount for electrically controlled spintronics due to their intrinsic potentials for higher memory density, scalability, thermal stability and endurance, surpassing an in-plane magnetic anisotropy (IMA). Nickel film is a long-lived fundamental element ferromagnet, yet its electrical transport behavior associated with magnetism has not been c… ▽ More Perpendicular magnetic anisotropy (PMA) of magnets is paramount for electrically controlled spintronics due to their intrinsic potentials for higher memory density, scalability, thermal stability and endurance, surpassing an in-plane magnetic anisotropy (IMA). Nickel film is a long-lived fundamental element ferromagnet, yet its electrical transport behavior associated with magnetism has not been comprehensively studied, hindering corresponding spintronic applications exploiting nickel-based compounds. Here, we systematically investigate the highly versatile magnetism and corresponding transport behavior of nickel films. As the thickness reduces within the general thickness regime of a magnet layer for a memory device, the hardness of nickel films' ferromagnetic loop of anomalous Hall effect increases and then decreases, reflecting the magnetic transitions from IMA to PMA and back to IMA. Additionally, the square ferromagnetic loop changes from a hard to a soft one at rising temperatures, indicating a shift from PMA to IMA. Furthermore, we observe a butterfly magnetoresistance resulting from the anisotropic magnetoresistance effect, which evolves in conjunction with the thickness and temperature-dependent magnetic transformations as a complementary support. Our findings unveil the rich magnetic dynamics and most importantly settle down the most useful guiding information for current-driven spintronic applications based on nickel film: The hysteresis loop is squarest for the ~8 nm-thick nickel film, of highest hardness with Rxyr/Rxys~1 and minimum Hs-Hc, up to 125 K; otherwise, extra care should be taken for a different thickness or at a higher temperature. △ Less

Submitted 21 February, 2024; originally announced February 2024.

Comments: 9 pages, 5 figures, accepted by Journal of Physics: Condensed Matter

Journal ref: Journal of Physics: Condensed Matter 36, 235801 (2024)

DeepH-2: Enhancing deep-learning electronic structure via an equivariant local-coordinate transformer

Authors: Yuxiang Wang, He Li, Zechen Tang, Honggeng Tao, Yanzhen Wang, Zilong Yuan, Zezhou Chen, Wenhui Duan, Yong Xu

Abstract: Deep-learning electronic structure calculations show great potential for revolutionizing the landscape of computational materials research. However, current neural-network architectures are not deemed suitable for widespread general-purpose application. Here we introduce a framework of equivariant local-coordinate transformer, designed to enhance the deep-learning density functional theory Hamilto… ▽ More Deep-learning electronic structure calculations show great potential for revolutionizing the landscape of computational materials research. However, current neural-network architectures are not deemed suitable for widespread general-purpose application. Here we introduce a framework of equivariant local-coordinate transformer, designed to enhance the deep-learning density functional theory Hamiltonian referred to as DeepH-2. Unlike previous models such as DeepH and DeepH-E3, DeepH-2 seamlessly integrates the simplicity of local-coordinate transformations and the mathematical elegance of equivariant neural networks, effectively overcoming their respective disadvantages. Based on our comprehensive experiments, DeepH-2 demonstrates superiority over its predecessors in both efficiency and accuracy, showcasing state-of-the-art performance. This advancement opens up opportunities for exploring universal neural network models or even large materials models. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Sliding ferroelectric memories and synapses

Authors: Xiuzhen Li, Biao Qin, Yaxian Wang, Yue Xi, Zhiheng Huang, Mengze Zhao, Yalin Peng, Zitao Chen, Zitian Pan, Jundong Zhu, Chenyang Cui, Rong Yang, Wei Yang, Sheng Meng, Dongxia Shi, Xuedong Bai, Can Liu, Na Li, Jianshi Tang, Kaihui Liu, Luojun Du, Guangyu Zhang

Abstract: Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap photovoltaic devices. Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroe… ▽ More Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap photovoltaic devices. Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding its fundamental properties, functional devices based on sliding ferroelectrics, the key touchstone toward applications, remain elusive. Here, we demonstrate the rewritable, non-volatile memory devices at room-temperature utilizing a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer molybdenum disulfide. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 103 cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs. Our work demonstrates the sliding ferroelectric memories and synaptic plasticity on both rigid and flexible substrates, highlighting the great potential of sliding ferroelectrics for emerging technological applications in brain-inspired in-memory computing, edge intelligence and energy-efficient wearable electronics. △ Less

Submitted 29 January, 2024; originally announced January 2024.

Comments: 16 pages, 4 figures

Challenges and Opportunities in Searching for Rashba-Dresselhaus Materials for Efficient Spin-Charge Interconversion at Room Temperature

Authors: Zixu Wang, Zhizhong Chen, Rui Xu, Hanyu Zhu, Ravishankar Sundararaman, Jian Shi

Abstract: Spintronic logic devices require efficient spin-charge interconversion: converting charge current to spin current and spin current to charge current. In spin-orbit materials that are regarded as the most promising candidate for spintronic logic devices, one mechanism that is responsible for spin-charge interconversion is Edelstein and inverse Edelstein effects based on spin-momentum locking in mat… ▽ More Spintronic logic devices require efficient spin-charge interconversion: converting charge current to spin current and spin current to charge current. In spin-orbit materials that are regarded as the most promising candidate for spintronic logic devices, one mechanism that is responsible for spin-charge interconversion is Edelstein and inverse Edelstein effects based on spin-momentum locking in materials with Rashba-type spin-orbit coupling. Over last decade, there has been rapid progresses for increasing interconversion efficiencies due to the Edelstein effect in a few Rashba-Dresselhaus materials and topological insulators, making Rashba spin-momentum locking a promising technological solution for spin-orbit logic devices. However, despite the rapid progress that leads to high spin-charge interconversion efficiency at cryogenic temperatures, the room-temperature efficiency needed for technological applications is still low. This paper presents our understanding on the challenges and opportunities in searching for Rashba-Dresselhaus materials for efficient spin-charge interconversion at room temperature by focusing on materials properties such as Rashba coefficients, momentum relaxation times, spin-momentum locking relations and electrical conductivities. △ Less

Submitted 27 January, 2024; originally announced January 2024.

Comments: 5 figures

Fractal Surface States in Three-Dimensional Topological Quasicrystals

Authors: Zhu-Guang Chen, Cunzhong Lou, Kaige Hu, Lih-King Lim

Abstract: We study topological states of matter in quasicrystals, which do not rely on crystalline orders. In the absence of a bandstructure description and spin-orbit coupling, we show that a three-dimensional quasicrystal can nevertheless form a topological insulator. It relies on a combination of noncrystallographic rotational symmetry of quasicrystals and electronic orbital space symmetry, which is the… ▽ More We study topological states of matter in quasicrystals, which do not rely on crystalline orders. In the absence of a bandstructure description and spin-orbit coupling, we show that a three-dimensional quasicrystal can nevertheless form a topological insulator. It relies on a combination of noncrystallographic rotational symmetry of quasicrystals and electronic orbital space symmetry, which is the quasicrystalline counterpart of topological crystalline insulator. The resulting topological state obeys a non-trivial twisted bulk-boundary correspondence and lacks a good metallic surface. The topological surface states, localized on the top and bottom planes respecting the quasicrystalline symmetry, exhibit a new kind of multifractality with probability density concentrates mostly on high symmetry patches. They form a near-degenerate manifold of 'immobile' states whose number scales proportionally with the macroscopic sample size. This can open the door to a novel platform for topological surface physics distinct from the crystalline counterpart. △ Less

Submitted 21 January, 2024; originally announced January 2024.

High-topological-number skyrmions and phase transition in two-dimensional frustrated $J_1$-$J_2$ magnets

Authors: Hongliang Hu, Zhong Shen, Zheng Chen, Xiaoping Wu, Tingting Zhong, Changsheng Song

Abstract: With the rapidly expanded field of two-dimensional(2D) magnetic materials, the frustrated magnetic skyrmions are attracting growing interest recently. Here, based on hexagonal close-packed (HCP) lattice of $J_1$-$J_2$ Heisenberg spins model, we systematically investigate the frustrated skyrmions and phase transition by micromagnetic simulations and first-principles calculations. The results show t… ▽ More With the rapidly expanded field of two-dimensional(2D) magnetic materials, the frustrated magnetic skyrmions are attracting growing interest recently. Here, based on hexagonal close-packed (HCP) lattice of $J_1$-$J_2$ Heisenberg spins model, we systematically investigate the frustrated skyrmions and phase transition by micromagnetic simulations and first-principles calculations. The results show that four spin phases of antiferromagnetic, labyrinth domain, skyrmion and ferromagnetic textures are determined by the identified ranges of $J_1$-$J_2$. Importantly, skyrmion phase with an increasing topological number ($Q$) covers a wider $J_1$-$J_2$ area. Then, the diameter of skyrmions can be tuned by the frustration strength ($|J_2/J_1|$) or external magnetic field. Besides, a phase transition from N$\acute{e}$el to Bloch type skyrmion is observed due to the change of the helicity with the variation of $|J_2/J_1|$. Furthermore, as increasing magnetic field, the skyrmions with high $Q$ ($\ge 3$) tend to split into the ones with $Q=1$, thereby achieving a lower systematic energy. Additionally, we find that the CoCl$_2$ monolayer satisfies the requirement of the frustrated $J_1$-$J_2$ magnet, and the related magnetic behaviors agree with the above conclusions. The frustration-induced skyrmions are stable without the manipulation of temperature and magnetic field. Our results may open a possible way toward spintronic applications based on High-topological-number and nanoscale topological spin textures of skyrmions. △ Less

Submitted 20 January, 2024; v1 submitted 11 January, 2024; originally announced January 2024.

Comments: 7 pages, 5 figures

Disorder-induced enhancement of lithium-ion transport in solid-state electrolytes

Authors: Zhimin Chen, Tao Du, N. M. Anoop Krishnan, Yuanzheng Yue, Morten M. Smedskjaer

Abstract: Enhancing the ion conduction in solid electrolytes is critically important for the development of high-performance all-solid-state lithium-ion batteries (LIBs). Lithium thiophosphates are among the most promising solid electrolytes, as they exhibit superionic conductivity at room temperature. However, the lack of comprehensive understanding regarding their ion conduction mechanism, especially the… ▽ More Enhancing the ion conduction in solid electrolytes is critically important for the development of high-performance all-solid-state lithium-ion batteries (LIBs). Lithium thiophosphates are among the most promising solid electrolytes, as they exhibit superionic conductivity at room temperature. However, the lack of comprehensive understanding regarding their ion conduction mechanism, especially the effect of structural disorder on ionic conductivity, is a long-standing problem that limits further innovations of all-solid-state LIBs. Here, we address this challenge by establishing and employing a deep learning potential to simulate Li3PS4 electrolyte systems with varying levels of disorder. The results show that disorder-driven diffusion dynamics significantly enhances the room-temperature conductivity. We further establish bridges between dynamical characteristics, local structural features, and atomic rearrangements by applying a machine learning-based structure fingerprint termed "softness". This metric allows the classification of the disorder-induced "soft" hopping lithium ions. Our findings offer insights into ion conduction mechanisms in complex disordered structures, thereby contributing to the development of superior solid-state electrolytes for LIBs. △ Less

Submitted 10 January, 2024; originally announced January 2024.

Tuning Thermal Conductivity of Hybrid Perovskites through Halide Alloying

Authors: Guang Wang, Hongzhao Fan, Zhongwei Chen, Yufei Gao, Zuankai Wang, Zhigang Li, Haipeng Lu, Yanguang Zhou

Abstract: Tuning the thermal transport properties of hybrid halide perovskites is critical for their applications in optoelectronics, thermoelectrics, and photovoltaics. Here, we demonstrate an effective strategy to modulate the thermal transport property of hybrid perovskites by halide alloying. A highly tunable thermal conductivity of mixed-halide hybrid perovskites is achieved due to halide-alloying and… ▽ More Tuning the thermal transport properties of hybrid halide perovskites is critical for their applications in optoelectronics, thermoelectrics, and photovoltaics. Here, we demonstrate an effective strategy to modulate the thermal transport property of hybrid perovskites by halide alloying. A highly tunable thermal conductivity of mixed-halide hybrid perovskites is achieved due to halide-alloying and structural distortion. Our experimental measurements show that the room temperature thermal conductivity of MAPb(BrxI1-x)3 (x = 0-1) can be largely modulated from 0.27 W/mK (x = 0.5) to 0.47 W/mK (x = 1). Molecular dynamics simulations further demonstrate that the thermal conductivity reduction of hybrid halide perovskites results from the suppression of the mean free paths of the low-frequency acoustic and optical phonons. It is found that halide alloying and the induced structural distortion can largely increase the scatterings of optical and acoustic phonons, respectively. The confined diffusion of MA+ cations in the octahedra cage is found to act as an additional thermal transport channel in hybrid perovskites and can contribute around 10-20% of the total thermal conductivity. Our findings provide a strategy for tailoring the thermal transport in hybrid halide perovskites which may largely benefit their related applications. △ Less

Submitted 31 December, 2023; originally announced January 2024.

Antiferroelectric Oxide Thin-Films: Fundamentals, Properties, and Applications

Authors: Yangyang Si, Tianfu Zhang, Chenhan Liu, Sujit Das, Bin Xu, Roman G Burkovsky, Xian-Kui Wei, Zuhuang Chen

Abstract: Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and memory devices. Many of those applications are the most prospective in thin film form. The antiferroelectric ordering in thin films is highly sensitive to a rich set of factors, such as lattice strain, film thicknes… ▽ More Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and memory devices. Many of those applications are the most prospective in thin film form. The antiferroelectric ordering in thin films is highly sensitive to a rich set of factors, such as lattice strain, film thickness, surface and interface effects as well as film stoichiometry. To unlock the full potential of these materials and design high-quality thin films for functional devices, a comprehensive and systematic understanding of their behavior is essential. In conjunction with the necessary fundamental background of antiferroelectrics, we review recent progress on various antiferroelectric oxide thin films, the key parameters that trigger their phase transition and the device applications that rely on the robust responses to electric, thermal, and optical stimuli. Current challenges and future perspectives highlight new and emerging research directions in this field. It is hoped that this review can boost the development of antiferroelectric thin-film materials and device design, stimulating more researchers to explore the unknowns together. △ Less

Submitted 27 December, 2023; originally announced December 2023.

Comments: Accepted by Progress in Materials Science, Article reference JPMS_101231