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A Metastable Pentagonal 2D Material Synthesized by Symmetry-Driven Epitaxy
Authors:
Lina Liu,
Yujin Ji,
Marco Bianchi,
Saban M. Hus,
Zheshen Li,
Richard Balog,
Jill A. Miwa,
Philip Hofmann,
An-ping Li,
Dmitry Y. Zemlyanov,
Youyong Li,
Yong P. Chen
Abstract:
Most two-dimensional (2D) materials experimentally studied so far have hexagons as their building blocks. Only a few exceptions, such as PdSe2, are lower in energy in pentagonal phases and exhibit pentagons as building blocks. While theory has predicted a large number of pentagonal 2D materials, many of them are metastable and their experimental realization is difficult. Here we report the success…
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Most two-dimensional (2D) materials experimentally studied so far have hexagons as their building blocks. Only a few exceptions, such as PdSe2, are lower in energy in pentagonal phases and exhibit pentagons as building blocks. While theory has predicted a large number of pentagonal 2D materials, many of them are metastable and their experimental realization is difficult. Here we report the successful synthesis of a metastable pentagonal 2D material, the monolayer pentagonal PdTe2, by symmetry-driven epitaxy. Scanning tunneling microscopy and complementary spectroscopy measurements are used to characterize the monolayer pentagonal PdTe2, which demonstrates well-ordered low-symmetry atomic arrangements and is stabilized by lattice matching with the underlying Pd(100) substrate. Theoretical calculations, along with angle-resolved photoemission spectroscopy, reveal monolayer pentagonal PdTe2 is a semiconductor with an indirect bandgap of 1.05 eV. Our work opens an avenue for the synthesis of pentagon-based 2D materials and gives opportunities to explore their applications such as multifunctional nanoelectronics.
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Submitted 7 August, 2024;
originally announced August 2024.
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Direct view of gate-tunable miniband dispersion in graphene superlattices near the magic twist angle
Authors:
Zhihao Jiang,
Dongkyu Lee,
Alfred J. H. Jones,
Youngju Park,
Kimberly Hsieh,
Paulina Majchrzak,
Chakradhar Sahoo,
Thomas S. Nielsen,
Kenji Watanabe,
Takashi Taniguchi,
Philip Hofmann,
Jill A. Miwa,
Yong P. Chen,
Jeil Jung,
Søren Ulstrup
Abstract:
Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand quantum many-body states such as Mott insulators, unconventional superconductors and the fractional quantum Hall effect. These phenomena are observed in transport experiments when changing the filling of the low-energy electronic bands. Their origin is broadly ascribed to a combination of flat bands and strong Co…
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Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand quantum many-body states such as Mott insulators, unconventional superconductors and the fractional quantum Hall effect. These phenomena are observed in transport experiments when changing the filling of the low-energy electronic bands. Their origin is broadly ascribed to a combination of flat bands and strong Coulomb interactions, yet a comprehensive understanding is lacking. This is primarily because the relevant low-energy band structure is believed to strongly change in a non-trivial way as the electron filling is varied. Here we gain direct access to the filling-dependent low energy bands of twisted bilayer graphene (TBG) and twisted double bilayer graphene (TDBG) by applying micro-focused angle-resolved photoemission spectroscopy to in situ gated devices. Our findings for the two systems are in stark contrast: The doping dependent dispersion for TBG can be described in a simple model, combining a filling-dependent rigid band shift with a many-body related bandwidth change. In TDBG, on the other hand, we find a complex behaviour of the low-energy bands, combining non-monotonous bandwidth changes and tuneable gap openings. Our work establishes the extent of electric field tunability of the low energy electronic states in twisted graphene superlattices and can serve to underpin the theoretical understanding of the resulting phenomena.
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Submitted 27 May, 2024;
originally announced May 2024.
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Revealing flat bands and hybridization gaps in a twisted bilayer graphene device with microARPES
Authors:
Zhihao Jiang,
Kimberly Hsieh,
Alfred J. H. Jones,
Paulina Majchrzak,
Chakradhar Sahoo,
Kenji Watanabe,
Takashi Taniguchi,
Jill A. Miwa,
Yong P. Chen,
Søren Ulstrup
Abstract:
Controlling the electronic structure of two-dimensional materials using the combination of twist angle and electrostatic doping is an effective means to induce emergent phenomena. In bilayer graphene with an interlayer twist angle near the magic angle, the electronic dispersion is strongly modified by a manifold of hybridizing moiré Dirac cones leading to flat band segments with strong electronic…
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Controlling the electronic structure of two-dimensional materials using the combination of twist angle and electrostatic doping is an effective means to induce emergent phenomena. In bilayer graphene with an interlayer twist angle near the magic angle, the electronic dispersion is strongly modified by a manifold of hybridizing moiré Dirac cones leading to flat band segments with strong electronic correlations. Numerous technical challenges arising from spatial inhomogeneity of interlayer interactions, twist angle and device functionality have so far limited momentum-resolved electronic structure measurements of these systems to static conditions. Here, we present a detailed characterization of the electronic structure exhibiting miniband dispersions for twisted bilayer graphene, near the magic angle, integrated in a functional device architecture using micro-focused angle-resolved photoemission spectroscopy. The optimum conditions for visualizing the miniband dispersion are determined by exploiting the spatial resolution and photon energy tunability of the light source and applied to extract a hybridization gap size of $(0.14 \pm 0.03)$~eV and flat band segments extending across a moiré mini Brillouin zone. \textit{In situ} electrostatic gating of the sample enables significant electron-doping, causing the conduction band states to shift below the Fermi energy. Our work emphasizes key challenges in probing the electronic structure of magic angle bilayer graphene devices and outlines conditions for exploring the doping-dependent evolution of the dispersion that underpins the ability to control many-body interactions in the material.
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Submitted 4 February, 2024;
originally announced February 2024.
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Influence of disorder on antidot vortex Majorana states in 3D topological insulators
Authors:
Rafał Rechciński,
Aleksei Khindanov,
Dmitry I. Pikulin,
Jian Liao,
Leonid P. Rokhinson,
Yong P. Chen,
Roman M. Lutchyn,
Jukka I. Väyrynen
Abstract:
Topological insulator/superconductor two-dimensional heterostructures are promising candidates for realizing topological superconductivity and Majorana modes. In these systems, a vortex pinned by a pre-fabricated antidot in the superconductor can host Majorana zero-energy modes (MZMs), which are exotic quasiparticles that may enable quantum information processing. However, a major challenge is to…
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Topological insulator/superconductor two-dimensional heterostructures are promising candidates for realizing topological superconductivity and Majorana modes. In these systems, a vortex pinned by a pre-fabricated antidot in the superconductor can host Majorana zero-energy modes (MZMs), which are exotic quasiparticles that may enable quantum information processing. However, a major challenge is to design devices that can manipulate the information encoded in these MZMs. One of the key factors is to create small and clean antidots, so that the MZMs, localized in the vortex core, have a large gap to other excitations. If the antidot is too large or too disordered, the level spacing for the subgap vortex states may become smaller than temperature. In this paper, we numerically investigate the effects of disorder, chemical potential, and antidot size on the subgap vortex spectrum, using a two-dimensional effective model of the topological insulator surface. Our model allows us to simulate large system sizes with vortices up to 1.8 $μ$m in diameter. We also compare our disorder model with the transport data from existing experiments. We find that the spectral gap can exhibit a non-monotonic behavior as a function of disorder strength, and that it can be tuned by applying a gate voltage.
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Submitted 5 October, 2023;
originally announced October 2023.
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Scissors Modes of a Bose-Einstein Condensate in a Synthetic Magnetic Field
Authors:
Chunlei Qu,
Chuan-Hsun Li,
Yong P. Chen,
Sandro Stringari
Abstract:
We study the scissors modes of a harmonically trapped Bose-Einstein condensate under the influence of a synthetic magnetic field, which induces rigid rotational components in the velocity field. Our investigation reveals that the scissors mode, excited in the plane perpendicular to the synthetic magnetic field, becomes coupled to the quadrupole modes of the condensate, giving rise to typical beati…
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We study the scissors modes of a harmonically trapped Bose-Einstein condensate under the influence of a synthetic magnetic field, which induces rigid rotational components in the velocity field. Our investigation reveals that the scissors mode, excited in the plane perpendicular to the synthetic magnetic field, becomes coupled to the quadrupole modes of the condensate, giving rise to typical beating effects. Moreover, the two scissors modes excited in the vertical planes are also coupled together by the synthetic magnetic field, resulting in intriguing gyroscope dynamics. Our analytical results, derived from a spinor hydrodynamic theory, are further validated through numerical simulations of the three-dimensional Gross-Pitaevskii equation. These predictions for the condensates subject to a synthetic magnetic field are experimentally accessible with current cold-atom setups and hold promise for potential applications in quantum sensing.
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Submitted 5 September, 2023;
originally announced September 2023.
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Chiral Quantum well Rashba splitting in Sb monolayer on Au(111)
Authors:
Jinbang Hu,
Lina Liu,
Xiansi Wang,
Yong P. Chen,
Justin W Wells
Abstract:
We present a comprehensive investigation into the atomic and electronic structures of a single-layer Sb(110) rhombohedral crystal formed on an Au(111) substrate. Low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) reveal a pure two-dimensional (2D) Sb stripe structure, composed of a pair of Sb(110) unit cells located in a chiral configuration with mirror symmetry breakin…
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We present a comprehensive investigation into the atomic and electronic structures of a single-layer Sb(110) rhombohedral crystal formed on an Au(111) substrate. Low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM) reveal a pure two-dimensional (2D) Sb stripe structure, composed of a pair of Sb(110) unit cells located in a chiral configuration with mirror symmetry breaking perpendicular to the direction of the bright stripe. Based on angle-resolved photoemission spectroscopy (ARPES) measurements and Sb-weighted band structure from density functional theory calculations, we report the unambiguous determination of Rashba spin-orbit coupled bands from the 2D Sb film, exhibiting a chiral symmetry in the electronic structure with the crossing points located at the $Γ$ point and the X point, respectively. Moreover, From dI/dV spectra and density of states (DOS) calculations, the quantum well (QW) Rashba-type states induced by the in-plane mirror symmetry breaking in the Sb stripe structure have been identified. Orbital decomposition of the projected band structure reveals that hybridization between Sb py states and Au states modifies the spin splitting of the QW states, attributed to the intrinsic strong SOC of Au states introduced into the QW states.
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Submitted 27 June, 2024; v1 submitted 13 August, 2023;
originally announced August 2023.
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Charge transfer-induced Lifshitz transition and magnetic symmetry breaking in ultrathin CrSBr crystals
Authors:
Marco Bianchi,
Kimberly Hsieh,
Esben Juel Porat,
Florian Dirnberger,
Julian Klein,
Kseniia Mosina,
Zdenek Sofer,
Alexander N. Rudenko,
Mikhail I. Katsnelson,
Yong P. Chen,
Malte Rösner,
Philip Hofmann
Abstract:
Ultrathin CrSBr flakes are exfoliated \emph{in situ} on Au(111) and Ag(111) and their electronic structure is studied by angle-resolved photoemission spectroscopy. The thin flakes' electronic properties are drastically different from those of the bulk material and also substrate-dependent. For both substrates, a strong charge transfer to the flakes is observed, partly populating the conduction ban…
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Ultrathin CrSBr flakes are exfoliated \emph{in situ} on Au(111) and Ag(111) and their electronic structure is studied by angle-resolved photoemission spectroscopy. The thin flakes' electronic properties are drastically different from those of the bulk material and also substrate-dependent. For both substrates, a strong charge transfer to the flakes is observed, partly populating the conduction band and giving rise to a highly anisotropic Fermi contour with an Ohmic contact to the substrate. The fundamental CrSBr band gap is strongly renormalized compared to the bulk. The charge transfer to the CrSBr flake is substantially larger for Ag(111) than for Au(111), but a rigid energy shift of the chemical potential is insufficient to describe the observed band structure modifications. In particular, the Fermi contour shows a Lifshitz transition, the fundamental band gap undergoes a transition from direct on Au(111) to indirect on Ag(111) and a doping-induced symmetry breaking between the intra-layer Cr magnetic moments further modifies the band structure. Electronic structure calculations can account for non-rigid Lifshitz-type band structure changes in thin CrSBr as a function of doping and strain. In contrast to undoped bulk band structure calculations that require self-consistent $GW$ theory, the doped thin film properties are well-approximated by density functional theory if local Coulomb interactions are taken into account on the mean-field level and the charge transfer is considered.
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Submitted 24 July, 2023;
originally announced July 2023.
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Enhanced ferromagnetism in artificially stretched lattice in quasi two-dimensional Cr2Ge2Te6
Authors:
Hiroshi Idzuchi,
Andres E Llacsahuanga Allcca,
Anh Khoa Augustin Lu,
Mitsuhiro Saito,
Michel Houssa,
Ruishen Meng,
Kazutoshi Inoue,
Xing-Chen Pan,
Katsumi Tanigaki,
Yuichi Ikuhara,
Takeshi Nakanishi,
Yong P Chen
Abstract:
In the fundamental understanding of magnetic interactions between atoms in solids, the crystal lattice is one of the key parameters. As the effective tool for controlling the lattice using tensile stress is limited, there are only few demonstrations of the control in magnetic properties with expanding the lattice structure. Here, we observe that the Curie temperature (Tc) of quasi two-dimensional…
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In the fundamental understanding of magnetic interactions between atoms in solids, the crystal lattice is one of the key parameters. As the effective tool for controlling the lattice using tensile stress is limited, there are only few demonstrations of the control in magnetic properties with expanding the lattice structure. Here, we observe that the Curie temperature (Tc) of quasi two-dimensional Cr2Ge2Te6 with NiO overlayer doubles from ~60 K to ~120 K, describe a clear correlation of magnetic properties with lattice expansion, which is characterized by several probes and computational approaches, and address on the mechanisms leading to the increase in Tc via the change in exchange interactions.
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Submitted 15 June, 2023;
originally announced June 2023.
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Quantum sensing of paramagnetic spins in liquids with spin qubits in hexagonal boron nitride
Authors:
Xingyu Gao,
Sumukh Vaidya,
Peng Ju,
Saakshi Dikshit,
Kunhong Shen,
Yong P. Chen,
Tongcang Li
Abstract:
Paramagnetic ions and radicals play essential roles in biology and medicine, but detecting these species requires a highly sensitive and ambient-operable sensor. Optically addressable spin color centers in 3D semiconductors have been used for detecting paramagnetic spins as they are sensitive to the spin magnetic noise. However, the distance between spin color centers and target spins is limited d…
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Paramagnetic ions and radicals play essential roles in biology and medicine, but detecting these species requires a highly sensitive and ambient-operable sensor. Optically addressable spin color centers in 3D semiconductors have been used for detecting paramagnetic spins as they are sensitive to the spin magnetic noise. However, the distance between spin color centers and target spins is limited due to the difficulty of creating high-quality spin defects near the surface of 3D materials. Here, we show that spin qubits in hexagonal boron nitride (hBN), a layered van der Waals (vdW) material, can serve as a promising sensor for nanoscale detection of paramagnetic spins in liquids. We first create shallow spin defects in close proximity to the hBN surface, which sustain high-contrast optically detected magnetic resonance (ODMR) in liquids. Then we demonstrate sensing spin noise of paramagnetic ions in water based on spin relaxation measurements. Finally, we show that paramagnetic ions can reduce the contrast of spin-dependent fluorescence, enabling efficient detection by continuous wave ODMR. Our results demonstrate the potential of ultrathin hBN quantum sensors for chemical and biological applications.
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Submitted 4 March, 2023;
originally announced March 2023.
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Real-space imaging of the tailored plasmons in twisted bilayer graphene
Authors:
Fengrui Hu,
Suprem R Das,
Yilong Luan,
T. -F. Chung,
Yong P. Chen,
Zhe Fei
Abstract:
We report a systematic plasmonic study of twisted bilayer graphene (TBLG) - two graphene layers stacked with a twist angle. Through real-space nanoimaging of TBLG single crystals with a wide distribution of twist angles, we find that TBLG supports confined infrared plasmons that are sensitively dependent on the twist angle. At small twist angles, TBLG has a plasmon wavelength comparable to that of…
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We report a systematic plasmonic study of twisted bilayer graphene (TBLG) - two graphene layers stacked with a twist angle. Through real-space nanoimaging of TBLG single crystals with a wide distribution of twist angles, we find that TBLG supports confined infrared plasmons that are sensitively dependent on the twist angle. At small twist angles, TBLG has a plasmon wavelength comparable to that of single-layer graphene. At larger twist angles, the plasmon wavelength of TBLG increases significantly with apparently lower damping. Further analysis and modeling indicate that the observed twist-angle dependence of TBLG plasmons in the Dirac linear regime is mainly due to the Fermi-velocity renormalization, a direct consequence of interlayer electronic coupling. Our work unveils the tailored plasmonic characteristics of TBLG and deepens our understanding of the intriguing nano-optical physics in novel van der Waals coupled two-dimensional materials.
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Submitted 26 January, 2023;
originally announced January 2023.
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Observation of room-temperature ferroelectricity in elemental Te nanowires
Authors:
Jinlei Zhang,
Jiayong Zhang,
Yaping Qi,
Shuainan Gong,
Run Zhao,
Hongbin Yang,
Zhenping Wu,
Dapeng Cui,
Lin Wang,
Chunlan Ma,
Ju Gao,
Yong P. Chen,
Yucheng Jiang
Abstract:
Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in elemental materials, causing a lack of spontaneous electric polarization. Here, we report an unexpected room-temperature ferroelectricity in few-chain Te nanowir…
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Ferroelectrics are essential in low-dimensional memory devices for multi-bit storage and high-density integration. A polar structure is a necessary premise for ferroelectricity, mainly existing in compounds. However, it is usually rare in elemental materials, causing a lack of spontaneous electric polarization. Here, we report an unexpected room-temperature ferroelectricity in few-chain Te nanowires. Out-of-plane ferroelectric loops and domain reversal are observed by piezoresponse force microscopy. Through density functional theory, we attribute the ferroelectricity to the ion-displacement created by the interlayer interaction between lone pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, supporting a self-gated field-effect transistor. It enables a nonvolatile memory with high in-plane mobility, zero supply voltage, multilevel resistive states, and a high on/off ratio. Our work provides new opportunities for elemental ferroelectrics with polar structures and paves a way towards applications such as low-power dissipation electronics and computing-in-memory devices.
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Submitted 8 November, 2022;
originally announced November 2022.
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Formation of quantum dots in MoS2 with cryogenic Bi contacts and intrinsic Schottky barriers
Authors:
Riku Tataka,
Alka Sharma,
Tomoya Johmen,
Takeshi Kumasaka,
Motoya Shinozaki,
Yong P. Chen,
Tomohiro Otsuka
Abstract:
The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transport. Here, we utilize the strategy of employing the…
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The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transport. Here, we utilize the strategy of employing the semimetal for Ohmic contacts with transition metal dichalcogenides especially, multilayer MoS2 and successfully fabricate the MoS2-Bi based FET devices. We observe the Ohmic behavior in the MoS2-Bi devices at cryogenic temperatures 4.2, 2.3 and 0.4 K. We also utilize intrinsic Schottky barriers formed at the interface between MoS2 and Au for the gate electrodes to form and control quantum dots. We observed Coulomb diamonds in MoS2 devices at cryogenic temperature. Our results of quantum transport in MoS2 could serve as a stepping stone for investigating novel quantum effects such as spin-valley coupling and the manipulation of qubit systems.
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Submitted 21 October, 2022;
originally announced October 2022.
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A Platform for Braiding Majorana Modes with Magnetic Skyrmions
Authors:
Shiva T. Konakanchi,
Jukka I. Väyrynen,
Yong P. Chen,
Pramey Upadhyaya,
Leonid P. Rokhinson
Abstract:
After a decade of intense theoretical and experimental efforts, demonstrating braiding of Majorana modes remains an unsolved problem in condensed matter physics due to platform specific challenges. In this work, we propose topological superconductor -- magnetic multilayer heterostructures with on-chip microwave cavity readout as a novel platform for initializing, braiding and reading out Majorana…
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After a decade of intense theoretical and experimental efforts, demonstrating braiding of Majorana modes remains an unsolved problem in condensed matter physics due to platform specific challenges. In this work, we propose topological superconductor -- magnetic multilayer heterostructures with on-chip microwave cavity readout as a novel platform for initializing, braiding and reading out Majorana modes. Stray fields from a skyrmion in the magnetic layers can nucleate a vortex in the topological superconducting layer. Such a vortex is known to host Majorana bound states at its core. Through analytical calculations within London and Thiele formalisms, and through micromagnetic simulations, we show that our nucleation and braiding scheme can be effectively realized with a variety of existing options for magnetic and superconducting layers. Further, we show that the coupling of the Majorana bound states to electric field of a resonator leads to an experimentally observable parity-dependent dispersive shift of the resonator frequency. Our work paves the way for realizing Majorana braiding in the near future.
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Submitted 19 October, 2022;
originally announced October 2022.
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Van der Waals engineering of ultrafast carrier dynamics in magnetic heterostructures
Authors:
Paulina Majchrzak,
Klara Volckaert,
Deepnarayan Biswas,
Denny Puntel,
Wibke Bronsch,
Federico Cilento,
Xing-Chen Pan,
Yong P. Chen,
Søren Ulstrup
Abstract:
Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface band structures depending on the stacking order and exposed termination, allowing fine control of their magnetic, electronic and optical properties. Here, we probe the ultrafast dynamical response of MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ following…
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Heterostructures composed of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and its non-magnetic counterpart Bi$_2$Te$_3$ host distinct surface band structures depending on the stacking order and exposed termination, allowing fine control of their magnetic, electronic and optical properties. Here, we probe the ultrafast dynamical response of MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ following near-infrared optical excitation using time- and angle-resolved photoemission spectroscopy. We gain access to the out-of-equilibrium surface electronic structure of both MnBi$_2$Te$_4$ and Bi$_2$Te$_3$ surface terminations of MnBi$_4$Te$_7$, revealing an instantaneous occupation of states that are resonant with the optical excitation in the Bi$_2$Te$_3$ layer followed by carrier extraction into the adjacent MnBi$_2$Te$_4$ layers with a laser fluence-tunable delay of up to 350 fs. The ensuing thermal relaxation processes are driven by in-plane phonon scattering with significantly slower relaxation times in the magnetic MnBi$_2$Te$_4$ septuple layers. The competition of interlayer charge transfer and intralayer phonon scattering establishes MnBi$_2$Te$_4$-based compounds as a platform for controlling ultrafast charge transfer processes in combination with magnetism and topology in van der Waals heterostructures.
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Submitted 8 August, 2022;
originally announced August 2022.
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Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nano-Cavity
Authors:
Xiaohui Xu,
Abhishek. B. Solanki,
Demid Sychev,
Xingyu Gao,
Samuel Peana,
Aleksandr S. Baburin,
Karthik Pagadala,
Zachariah O. Martin,
Sarah N. Chowdhury,
Yong P. Chen,
Ilya A. Rodionov,
Alexander V. Kildishev,
Tongcang Li,
Pramey Upadhyaya,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optically addressable spin states has emerged recently due to its potential use in quantum sensing. Compared to spin defects in bulk crystals, VB- preserves…
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Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optically addressable spin states has emerged recently due to its potential use in quantum sensing. Compared to spin defects in bulk crystals, VB- preserves its spin coherence properties when placed at nanometer-scale distances from the hBN surface, enabling nanometer-scale quantum sensing. On the other hand, the low quantum efficiency of VB- has hindered its use in practical applications. Several studies have reported improving the overall quantum efficiency of VB- defects using plasmonic effects; however, the overall enhancements of up to 17 times reported to date are relatively modest. In this study, we explore and demonstrate much higher emission enhancements of VB- with ultralow-loss nano-patch antenna (NPA) structures. An overall intensity enhancement of up to 250 times is observed for NPA-coupled VB- defects. Since the laser spot exceeds the area of the NPA, where the enhancement occurs, the actual enhancement provided by the NPA is calculated to be ~1685 times, representing a significant increase over the previously reported results. Importantly, the optically detected magnetic resonance (ODMR) contrast is preserved at such exceptionally strong enhancement. Our results not only establish NPA-coupled VB- defects as high-resolution magnetic field sensors operating at weak laser powers, but also provide a promising approach to obtaining single VB- defects.
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Submitted 17 July, 2022;
originally announced July 2022.
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Gate-tunable anomalous Hall effect in stacked van der Waals ferromagnetic insulator - topological insulator heterostructures
Authors:
Andres E. Llacsahuanga Allcca,
Xing-Chen Pan,
Ireneusz Miotkowski,
Katsumi Tanigaki,
Yong P. Chen
Abstract:
The search of novel topological phases, such as the quantum anomalous Hall insulator (QAHI) or the axion insulator, has motivated different schemes to introduce magnetism into topological insulators. One scheme is to introduce ferromagnetic dopants in topological insulators. However, it is generally challenging and requires carefully engineered growth/heterostructures or relatively low temperature…
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The search of novel topological phases, such as the quantum anomalous Hall insulator (QAHI) or the axion insulator, has motivated different schemes to introduce magnetism into topological insulators. One scheme is to introduce ferromagnetic dopants in topological insulators. However, it is generally challenging and requires carefully engineered growth/heterostructures or relatively low temperatures to observe the QAHI due to issues such as the added disorder with ferromagnetic dopants. Another promising scheme is using the magnetic proximity effect with a magnetic insulator to magnetize the topological insulator. Most of these heterostructures are synthesized so far by growth techniques such as molecular beam epitaxy and metallic organic chemical vapor deposition. These are not readily applicable to allow mixing and matching many of the available ferromagnetic and topological insulators due to difference in growth conditions and lattice mismatch. Here, we demonstrate that the magnetic proximity effect can still be obtained in stacked heterostructures assembled via the dry transfer of exfoliated micrometer-sized thin flakes of van der Waals topological insulator and magnetic insulator materials (BiSbTeSe2/Cr2Ge2Te6), as evidenced in the observation of an anomalous Hall effect (AHE). Furthermore, devices made from these heterostructures can allow modulation of the AHE when controlling the carrier density via electrostatic gating. These results show that simple mechanical transfer of magnetic van der Waals materials provides another possible avenue to magnetize topological insulators by magnetic proximity effect, a key step towards further realization of novel topological phases such as QAHI and axion insulators.
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Submitted 27 June, 2022;
originally announced June 2022.
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Electrically tunable moiré magnetism in twisted double bilayers of chromium triiodide
Authors:
Guanghui Cheng,
Mohammad Mushfiqur Rahman,
Andres Llacsahuanga Allcca,
Avinash Rustagi,
Xingtao Liu,
Lina Liu,
Lei Fu,
Yanglin Zhu,
Zhiqiang Mao,
Kenji Watanabe,
Takashi Taniguchi,
Pramey Upadhyaya,
Yong P. Chen
Abstract:
Moiré superlattices in van der Waals structures can be used to control the electronic properties of the material and lead to emergent correlated and topological phenomena. Its first demonstration in van der Waals magnets exhibited noncollinear states and domain structures with, however, limited manipulation. Here we report electrically tunable moiré magnetism in twisted double bilayers - that is,…
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Moiré superlattices in van der Waals structures can be used to control the electronic properties of the material and lead to emergent correlated and topological phenomena. Its first demonstration in van der Waals magnets exhibited noncollinear states and domain structures with, however, limited manipulation. Here we report electrically tunable moiré magnetism in twisted double bilayers - that is, a bilayer plus a bilayer with a twist angle between them - of layered antiferromagnet CrI3. Using magneto-optical Kerr effect microscopy, we observe the coexistence of antiferromagnetic and ferromagnetic order with nonzero net magnetization - a hallmark of moiré magnetism. Such magnetic state extends over a wide range of twist angles (with transitions at around 0° and above 20°) and exhibits a nonmonotonic temperature dependence. We further demonstrate voltage-assisted magnetic switching. The observed nontrivial magnetic states and unprecedented control by twist angle, temperature and electrical gating are supported by the simulated phase diagram of the moiré magnetism.
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Submitted 2 August, 2024; v1 submitted 8 April, 2022;
originally announced April 2022.
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Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy
Authors:
H. Idzuchi,
M. Kimata,
S. Okamoto,
P. Laurell,
N. Mohanta,
M. Cothrine,
S. E. Nagler,
D. Mandrus,
A. Banerjee,
Y. P. Chen
Abstract:
Alpha-phase (a-) RuCl_3 has emerged as a prime candidate for a quantum spin liquid (QSL) that promises exotic quasiparticles relevant for fault-tolerant quantum computation. Here, we report spin sensitive transport measurements to probe spin correlation in a-RuCl_3 using a proximal spin Hall metal platinum (Pt). Both transverse and longitudinal resistivities exhibit oscillations as function of the…
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Alpha-phase (a-) RuCl_3 has emerged as a prime candidate for a quantum spin liquid (QSL) that promises exotic quasiparticles relevant for fault-tolerant quantum computation. Here, we report spin sensitive transport measurements to probe spin correlation in a-RuCl_3 using a proximal spin Hall metal platinum (Pt). Both transverse and longitudinal resistivities exhibit oscillations as function of the angle between an in-plane magnetic field and the current, akin to previously measured spin Hall magnetoresistance (SMR) in antiferromagnet/Pt heterostructures. The oscillations are observed from 1.5 T to 18 T, both within and beyond the magnetic field range where the antiferromagnetic order and QSL state are reported in a-RuCl_3. The SMR oscillations show that spins in a-RuCl3 are largely locked to an in-plane quantization axis transverse to the magnetic field, constituting a continuous-symmetry-broken state that does not necessarily represent a long-range order. This robust anisotropy of spin axis uncovers critical energy scales connected with reported QSL signatures in a-RuCl_3. Simulations suggest a predominantly antiferromagnetic correlation to moderately high magnetic-fields, that may support the SMR oscillations. The coupling of the spin states within a-RuCl_3 and Pt demonstrated in our experiment opens a transport route to exploring exotic spin phases and device functionalities of QSL materials.
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Submitted 6 April, 2022;
originally announced April 2022.
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Nuclear spin polarization and control in a van der Waals material
Authors:
Xingyu Gao,
Sumukh Vaidya,
Kejun Li,
Peng Ju,
Boyang Jiang,
Zhujing Xu,
Andres E. Llacsahuanga Allcca,
Kunhong Shen,
Takashi Taniguchi,
Kenji Watanabe,
Sunil A. Bhave,
Yong P. Chen,
Yuan Ping,
Tongcang Li
Abstract:
Van der Waals layered materials are a focus of materials research as they support strong quantum effects and can easily form heterostructures. Electron spins in van der Waals materials played crucial roles in many recent breakthroughs, including topological insulators, two-dimensional (2D) magnets, and spin liquids. However, nuclear spins in van der Waals materials remain an unexplored quantum res…
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Van der Waals layered materials are a focus of materials research as they support strong quantum effects and can easily form heterostructures. Electron spins in van der Waals materials played crucial roles in many recent breakthroughs, including topological insulators, two-dimensional (2D) magnets, and spin liquids. However, nuclear spins in van der Waals materials remain an unexplored quantum resource. Here we report the first demonstration of optical polarization and coherent control of nuclear spins in a van der Waals material at room temperature. We use negatively-charged boron vacancy ($V_B^-$) spin defects in hexagonal boron nitride to polarize nearby nitrogen nuclear spins. Remarkably, we observe the Rabi frequency of nuclear spins at the excited-state level anti-crossing of $V_B^-$ defects to be 350 times larger than that of an isolated nucleus, and demonstrate fast coherent control of nuclear spins. We also detect strong electron-mediated nuclear-nuclear spin coupling that is 5 orders of magnitude larger than the direct nuclear spin dipolar coupling, enabling multi-qubit operations. Nitrogen nuclear spins in a triangle lattice will be suitable for large-scale quantum simulation. Our work opens a new frontier with nuclear spins in van der Waals materials for quantum information science and technology.
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Submitted 24 March, 2022;
originally announced March 2022.
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Emergence of electric-field-tunable interfacial ferromagnetism in 2D antiferromagnet heterostructures
Authors:
Guanghui Cheng,
Mohammad Mushfiqur Rahman,
Zhiping He,
Andres Llacsahuanga Allcca,
Avinash Rustagi,
Kirstine Aggerbeck Stampe,
Yanglin Zhu,
Shaohua Yan,
Shangjie Tian,
Zhiqiang Mao,
Hechang Lei,
Kenji Watanabe,
Takashi Taniguchi,
Pramey Upadhyaya,
Yong P. Chen
Abstract:
Van der Waals (vdW) magnet heterostructures have emerged as new platforms to explore exotic magnetic orders and quantum phenomena. Here, we study heterostructures of layered antiferromagnets, CrI3 and CrCl3, with perpendicular and in-plane magnetic anisotropy, respectively. Using magneto-optical Kerr effect microscopy, we demonstrate out-of-plane magnetic order in the CrCl3 layer proximal to CrI3,…
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Van der Waals (vdW) magnet heterostructures have emerged as new platforms to explore exotic magnetic orders and quantum phenomena. Here, we study heterostructures of layered antiferromagnets, CrI3 and CrCl3, with perpendicular and in-plane magnetic anisotropy, respectively. Using magneto-optical Kerr effect microscopy, we demonstrate out-of-plane magnetic order in the CrCl3 layer proximal to CrI3, with ferromagnetic interfacial coupling between the two. Such an interlayer exchange field leads to higher critical temperature than that of either CrI3 or CrCl3 alone. We further demonstrate significant electric-field control of the coercivity, attributed to the naturally broken structural inversion symmetry of the heterostructure allowing unprecedented direct coupling between electric field and interfacial magnetism. These findings illustrate the opportunity to explore exotic magnetic phases and engineer spintronic devices in vdW heterostructures.
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Submitted 2 August, 2024; v1 submitted 24 March, 2022;
originally announced March 2022.
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High-contrast plasmonic-enhanced shallow spin defects in hexagonal boron nitride for quantum sensing
Authors:
Xingyu Gao,
Boyang Jiang,
Andres E. Llacsahuanga Allcca,
Kunhong Shen,
Mohammad A. Sadi,
Abhishek B. Solanki,
Peng Ju,
Zhujing Xu,
Pramey Upadhyaya,
Yong P. Chen,
Sunil A. Bhave,
Tongcang Li
Abstract:
The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46$\%$ at room temperature, a…
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The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46$\%$ at room temperature, and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold-film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He$^+$ ion implantation, and a gold-film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR, and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.
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Submitted 25 June, 2021;
originally announced June 2021.
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Epitaxial Growth of Monolayer PdTe2 and Patterned PtTe2 by Direct Tellurization of Pd and Pt surfaces
Authors:
Lina Liu,
Dmitry Zemlyanov,
Yong P. Chen
Abstract:
Two-dimensional (2D) palladium ditelluride (PdTe2) and platinum ditelluride (PtTe2) are two Dirac semimetals which demonstrate fascinating quantum properties such as superconductivity, magnetism and topological order, illustrating promising applications in future nanoelectronics and optoelectronics. However, the synthesis of their monolayers is dramatically hindered by strong interlayer coupling a…
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Two-dimensional (2D) palladium ditelluride (PdTe2) and platinum ditelluride (PtTe2) are two Dirac semimetals which demonstrate fascinating quantum properties such as superconductivity, magnetism and topological order, illustrating promising applications in future nanoelectronics and optoelectronics. However, the synthesis of their monolayers is dramatically hindered by strong interlayer coupling and orbital hybridization. In this study, an efficient synthesis method for monolayer PdTe2 and PtTe2 is demonstrated. Taking advantages of the surface reaction, epitaxial growth of large-area and high quality monolayers of PdTe2 and patterned PtTe2 is achieved by direct tellurization of Pd(111) and Pt(111). A well-ordered PtTe2 pattern with Kagome lattice formed by Te vacancy arrays is successfully grown. Moreover, multilayer PtTe2 can be also obtained and potential excitation of Dirac plasmons is observed. The simple and reliable growth procedure of monolayer PdTe2 and patterned PtTe2 gives unprecedented opportunities for investigating new quantum phenomena and facilitating practical applications in optoelectronics.
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Submitted 21 March, 2021;
originally announced March 2021.
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Electric field control of interaction between magnons and quantum spin defects
Authors:
Abhishek Bharatbhai Solanki,
Simeon I. Bogdanov,
Avinash Rustagi,
Neil R. Dilley,
Tingting Shen,
Mohammad Mushfiqur Rahman,
Wenqi Tong,
Punyashloka Debashis,
Zhihong Chen,
Joerg Appenzeller,
Yong P. Chen,
Vladimir M. Shalaev,
Pramey Upadhyaya
Abstract:
Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical mo…
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Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical modeling, we reveal that the observed electric-field tuning results from ferroelectric polarization control of the magnon-generated fields at the NV. Exploiting the demonstrated control, we also propose magnon-enhanced hybrid electric field sensors with improved sensitivity.
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Submitted 24 May, 2021; v1 submitted 2 December, 2020;
originally announced December 2020.
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Spin injection characteristics of Py/graphene/Pt by gigahertz and terahertz magnetization dynamics driven by femtosecond laser pulse
Authors:
H. Idzuchi,
S. Iihama,
M. Shimura,
A. Kumatani,
S. Mizukami,
Y. P. Chen
Abstract:
Spin transport characteristics of graphene has been extensively studied so far. The spin transport along c-axis is however reported by rather limited number of papers. We have studied spin transport characteristics through graphene along c-axis with permalloy(Py)/graphene(Gr)/Pt by gigahertz (GHz) and terahertz (THz) magnetization dynamics driven by femtosecond laser pulses. The relatively simple…
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Spin transport characteristics of graphene has been extensively studied so far. The spin transport along c-axis is however reported by rather limited number of papers. We have studied spin transport characteristics through graphene along c-axis with permalloy(Py)/graphene(Gr)/Pt by gigahertz (GHz) and terahertz (THz) magnetization dynamics driven by femtosecond laser pulses. The relatively simple sample structure does not require electrodes on the sample. The graphene layer was prepared by chemical vapor deposition and transferred on Pt film. The quality of graphene layer was characterized by Raman microscopy. Time resolved magneto-optical Kerr effect is used to characterize gigahertz magnetization dynamics. Magnetization precession is clearly observed both for Pt/Py and Pt/Gr/Py. The Gilbert damping constant of Pt/Py was 0.015, indicates spin pumping effect from Py to Pt. The Gilbert damping constant of Pt/Gr/Py is found to be 0.011, indicates spin injection is blocked by graphene layer. We have also performed the measurement of THz emission for Pt/Py and Pt/Gr/Py. While the THz emission is clearly observed for Pt/Py, a strong reduction of THz emission is observed for Pt/Gr/Py. With these two different experiments, and highly anisotropic resistivity of graphite, we conclude that the vertical spin transport is strongly suppressed by the graphene layer.
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Submitted 15 October, 2020;
originally announced October 2020.
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Opposite current-induced spin polarizations in bulk-metallic Bi2Se3 and bulk-insulating Bi2Te2Se topological insulator thin flakes
Authors:
Jifa Tian,
Cüneyt Şahin,
Ireneusz Miotkowski,
Michael E. Flatté,
Yong P. Chen
Abstract:
One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba type spin-orbit interaction (SOI) and bulk conducting states t…
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One of the most fundamental and exotic properties of 3D topological insulators (TIs) is spin-momentum-locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba type spin-orbit interaction (SOI) and bulk conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current induced spin polarization (CISP) difficult. In this work, we directly compared the CISP between bulk-insulating Bi2Te2Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity (SHC). However, compared to BTS221, an opposite CISP is observed in the bulk metallic Bi2Se3, consistent instead with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk spin Hall Effect (SHE). Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices.
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Submitted 22 August, 2020;
originally announced August 2020.
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Increased Curie temperature and enhanced perpendicular magneto anisotropy of Cr2Ge2Te6/NiO heterostructure
Authors:
H. Idzuchi,
A. E. Llacsahuanga Allcca,
X. C. Pan,
K. Tanigaki,
Y. P. Chen
Abstract:
Magnetism in two-dimensional van der Waals materials has received significant attention recently. The Curie temperature reported for those materials, however, has been so far remained relatively low. Here, we measure magneto-optical Kerr effects (MOKE) under perpendicular magnetic field for van der Waals ferromagnet Cr2Ge2Te6 as well as its heterostructure with antiferromagnetic insulator NiO. We…
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Magnetism in two-dimensional van der Waals materials has received significant attention recently. The Curie temperature reported for those materials, however, has been so far remained relatively low. Here, we measure magneto-optical Kerr effects (MOKE) under perpendicular magnetic field for van der Waals ferromagnet Cr2Ge2Te6 as well as its heterostructure with antiferromagnetic insulator NiO. We observe a notable increase in both Curie temperature and magnetic perpendicular anisotropy in Cr2Ge2Te6/NiO heterostructures compared to those in Cr2Ge2Te6. Measurements on the same exfoliated Cr2Ge2Te6 flake (on a SiO2/Si substrate) before and after depositing NiO show that the hysteresis loop can change into a square shape with larger coercive field for Cr2Ge2Te6/NiO. The maximum Curie temperature (TC) observed for Cr2Ge2Te6/NiO reaches ~120 K, is nearly twice the maximum TC ~ 60 K reported for Cr2Ge2Te6 alone. Both enhanced perpendicular anisotropy and increased Curie temperature are observed for Cr2Ge2Te6 flakes with a variety of thicknesses ranging from ~5 nm to ~200 nm. The results indicate that magnetic properties of two-dimensional van der Waals magnets can be engineered and controlled by using the heterostructure interface with other materials.
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Submitted 6 December, 2019;
originally announced December 2019.
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Gate field effects on the topological insulator BiSbTeSe2 interface
Authors:
Shuanglong Liu,
Yang Xu,
Yun-Peng Wang,
Yong P. Chen,
James N. Fry,
Hai-Ping Cheng
Abstract:
Interfaces between two topological insulators are of fundamental interest in condensed matter physics. Inspired by experimental efforts, we study interfacial processes between two slabs of BiSbTeSe2 (BSTS) via first principles calculations. Topological surface states are absent for the BSTS interface at its equilibrium separation, but our calculations show that they appear if the inter-slab distan…
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Interfaces between two topological insulators are of fundamental interest in condensed matter physics. Inspired by experimental efforts, we study interfacial processes between two slabs of BiSbTeSe2 (BSTS) via first principles calculations. Topological surface states are absent for the BSTS interface at its equilibrium separation, but our calculations show that they appear if the inter-slab distance is greater than 6 Ang. More importantly, we find that topological interface states can be preserved by inserting two or more layers of hexagonal boron nitride between the two BSTS slabs. In experiments, the electric current tunneling through the interface is insensitive to back gate voltage when the bias voltage is small. Using a first-principles based method that allows us to simulate gate field, we show that at low bias the extra charge induced by a gate voltage resides on the surface that is closest to the gate electrode, leaving the interface almost undoped. This provides clues to understand the origin of the observed insensitivity of transport properties to back voltage at low bias. Our study resolves a few questions raised in experiment, which does not yet offer a clear correlation between microscopic physics and transport data. We provide a road map for the design of vertical tunneling junctions involving the interface between two topological insulators.
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Submitted 8 June, 2020; v1 submitted 15 October, 2019;
originally announced October 2019.
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Tuning insulator-semimetal transitions in 3D topological insulator thin films by inter-surface hybridization and in-plane magnetic fields
Authors:
Yang Xu,
Guodong Jiang,
Ireneusz Miotkowski,
Rudro R. Biswas,
Yong P. Chen
Abstract:
A pair of Dirac points (analogous to a vortex-antivortex pair) associated with opposite topological numbers (with $\pmπ$ Berry phases) can be merged together through parameter tuning and annihilated to gap the Dirac spectrum, offering a canonical example of a topological phase transition. Here, we report transport studies on thin films of BiSbTeSe$_2$ (BSTS), which is a 3D TI that hosts spin-helic…
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A pair of Dirac points (analogous to a vortex-antivortex pair) associated with opposite topological numbers (with $\pmπ$ Berry phases) can be merged together through parameter tuning and annihilated to gap the Dirac spectrum, offering a canonical example of a topological phase transition. Here, we report transport studies on thin films of BiSbTeSe$_2$ (BSTS), which is a 3D TI that hosts spin-helical gapless (semi-metallic) Dirac fermion surface states (SS) for sufficiently thick samples, with an observed resistivity close to $h/4e^2$ at the charge neutral point. When the sample thickness is reduced to $\sim$10 nm thick, the Dirac cones from the top and bottom surfaces can hybridize (analogous to a "merging" in the real space) and become gapped to give a trivial insulator. Furthermore, we observe that an in-plane magnetic field can drive the system again towards a metallic behavior, with a prominent negative magnetoresistance (MR, up to $\sim$$-$95\%) and a temperature-insensitive resistivity close to $h/2e^2$ at the charge neutral point. The observation is interpreted in terms of a predicted effect of an in-plane magnetic field to reduce the hybridization gap (which, if small enough, may be smeared by disorder and a metallic behavior). A sufficiently strong magnetic field is predicted to restore and split again the Dirac points in the momentum space, inducing a distinct 2D topological semimetal (TSM) phase with 2 single-fold Dirac cones of opposite spin-momentum windings.
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Submitted 7 April, 2019;
originally announced April 2019.
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Highly skewed current-phase relation in superconductor-topological insulator-superconductor Josephson junctions
Authors:
Morteza Kayyalha,
Aleksandr Kazakov,
Ireneusz Miotkowski,
Sergei Khlebnikov,
Leonid P. Rokhinson,
Yong P. Chen
Abstract:
Three-dimensional topological insulators (TI's) in proximity with superconductors are expected to exhibit exotic phenomena such as topological superconductivity (TSC) and Majorana bound states (MBS), which may have applications in topological quantum computation. In superconductor-TI-superconductor Josephson junctions, the supercurrent versus the phase difference between the superconductors, refer…
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Three-dimensional topological insulators (TI's) in proximity with superconductors are expected to exhibit exotic phenomena such as topological superconductivity (TSC) and Majorana bound states (MBS), which may have applications in topological quantum computation. In superconductor-TI-superconductor Josephson junctions, the supercurrent versus the phase difference between the superconductors, referred to as the current-phase relation (CPR), reveals important information including the nature of the superconducting transport. Here, we study the induced superconductivity in gate-tunable Josephson junctions (JJs) made from topological insulator BiSbTeSe2 with superconducting Nb electrodes. We observe highly skewed (non-sinusoidal) CPR in these junctions. The critical current, or the magnitude of the CPR, increases with decreasing temperature down to the lowest accessible temperature (T ~ 20 mK), revealing the existence of low-energy modes in our junctions. The gate dependence shows that close to the Dirac point the CPR becomes less skewed, indicating the transport is more diffusive, most likely due to the presence of electron/hole puddles and charge inhomogeneity. Our experiments provide strong evidence that superconductivity is induced in the highly ballistic topological surface states (TSS) in our gate-tunable TI- based JJs. Furthermore, the measured CPR is in good agreement with the prediction of a model which calculates the phase dependent eigenstate energies in our system, considering the finite width of the electrodes as well as the TSS wave functions extending over the entire circumference of the TI.
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Submitted 2 February, 2019; v1 submitted 2 December, 2018;
originally announced December 2018.
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Spin current generation and relaxation in a quenched spin-orbit-coupled Bose-Einstein condensate
Authors:
Chuan-Hsun Li,
Chunlei Qu,
Robert J. Niffenegger,
Su-Ju Wang,
Mingyuan He,
David B. Blasing,
Abraham J. Olson,
Chris H. Greene,
Yuli Lyanda-Geller,
Qi Zhou,
Chuanwei Zhang,
Yong P. Chen
Abstract:
Understanding the effects of spin-orbit coupling (SOC) and many-body interactions on spin transport is important in condensed matter physics and spintronics. This topic has been intensively studied for spin carriers such as electrons but barely explored for charge-neutral bosonic quasiparticles (including their condensates), which hold promises for coherent spin transport over macroscopic distance…
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Understanding the effects of spin-orbit coupling (SOC) and many-body interactions on spin transport is important in condensed matter physics and spintronics. This topic has been intensively studied for spin carriers such as electrons but barely explored for charge-neutral bosonic quasiparticles (including their condensates), which hold promises for coherent spin transport over macroscopic distances. Here, we explore the effects of synthetic SOC (induced by optical Raman coupling) and atomic interactions on the spin transport in an atomic Bose-Einstein condensate (BEC), where the spin-dipole mode (SDM, actuated by quenching the Raman coupling) of two interacting spin components constitutes an alternating spin current. We experimentally observe that SOC significantly enhances the SDM damping while reducing the thermalization (the reduction of the condensate fraction). We also observe generation of BEC collective excitations such as shape oscillations. Our theory reveals that the SOC-modified interference, immiscibility, and interaction between the spin components can play crucial roles in spin transport.
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Submitted 11 February, 2019; v1 submitted 15 October, 2018;
originally announced October 2018.
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Bose-Einstein Condensate on a Synthetic Topological Hall Cylinder
Authors:
Chuan-Hsun Li,
Yangqian Yan,
Shih-Wen Feng,
Sayan Choudhury,
David B. Blasing,
Qi Zhou,
Yong P. Chen
Abstract:
The interplay between matter particles and gauge fields in physical spaces with nontrivial geometries can lead to novel topological quantum matter. However, detailed microscopic mechanisms are often obscure, and unconventional spaces are generally challenging to construct in solids. Highly controllable atomic systems can quantum simulate such physics, even those inaccessible in other platforms. He…
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The interplay between matter particles and gauge fields in physical spaces with nontrivial geometries can lead to novel topological quantum matter. However, detailed microscopic mechanisms are often obscure, and unconventional spaces are generally challenging to construct in solids. Highly controllable atomic systems can quantum simulate such physics, even those inaccessible in other platforms. Here, we realize a Bose-Einstein condensate (BEC) on a synthetic cylindrical surface subject to a net radial synthetic magnetic flux. We observe a symmetry-protected topological band structure emerging on this Hall cylinder but disappearing in the planar counterpart. BEC's transport observed as Bloch oscillations in the band structure is analogous to traveling on a Möbius strip in the momentum space, revealing topological band crossings protected by a nonsymmorphic symmetry. We demonstrate that breaking this symmetry induces a topological transition manifested as gap opening at band crossings, and further manipulate the band structure and BEC's transport by controlling the axial synthetic magnetic flux. Our work opens the door for using atomic quantum simulators to explore intriguing topological phenomena intrinsic in unconventional spaces.
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Submitted 8 February, 2022; v1 submitted 6 September, 2018;
originally announced September 2018.
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Observation of Quantum Interference and Coherent Control in a Photochemical Reaction
Authors:
David B. Blasing,
Jesús Pérez-Ríos,
Yangqian Yan,
Sourav Dutta,
Chuan-Hsun Li,
Qi Zhou,
Yong P. Chen
Abstract:
Coherent control of reactants remains a longstanding challenge in quantum chemistry. In particular, we have studied laser-induced molecular formation (photoassociation) in a Raman-dressed spin-orbit-coupled 87Rb Bose-Einstein condensate, whose spin quantum state is a superposition of multiple bare spin components. In contrast to the notably different photoassociation-induced fractional atom losses…
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Coherent control of reactants remains a longstanding challenge in quantum chemistry. In particular, we have studied laser-induced molecular formation (photoassociation) in a Raman-dressed spin-orbit-coupled 87Rb Bose-Einstein condensate, whose spin quantum state is a superposition of multiple bare spin components. In contrast to the notably different photoassociation-induced fractional atom losses observed for the bare spin components of a statistical mixture, a superposition state with a comparable spin composition displays the same fractional loss on every spin component. We interpret this as the superposition state itself undergoing photoassociation. For superposition states induced by a large Raman coupling and zero Raman detuning, we observe a nearly complete suppression of the photoassociation rate. This suppression is consistent with a model based upon quantum destructive interference between two photoassociation pathways for colliding atoms with different spin combinations. This model also explains the measured dependence of the photoassociation rate on the Raman detuning at a moderate Raman coupling. Our work thus suggests that preparing atoms in quantum superpositions may represent a powerful new technique to coherently control photochemical reactions.
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Submitted 8 August, 2018; v1 submitted 30 July, 2018;
originally announced July 2018.
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Stable emission and fast optical modulation of quantum emitters in boron nitride nanotubes
Authors:
Jonghoon Ahn,
Zhujing Xu,
Jaehoon Bang,
Andres E. Llacsahuanga Allcca,
Yong P. Chen,
Tongcang Li
Abstract:
Atom-like defects in two-dimensional (2D) hexagonal boron nitride (hBN) have recently emerged as a promising platform for quantum information science. Here we investigate single-photon emissions from atomic defects in boron nitride nanotubes (BNNTs). We demonstrate the first optical modulation of the quantum emission from BNNTs with a near-infrared laser. This one-dimensional system displays brigh…
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Atom-like defects in two-dimensional (2D) hexagonal boron nitride (hBN) have recently emerged as a promising platform for quantum information science. Here we investigate single-photon emissions from atomic defects in boron nitride nanotubes (BNNTs). We demonstrate the first optical modulation of the quantum emission from BNNTs with a near-infrared laser. This one-dimensional system displays bright single-photon emission as well as high stability at room temperature and is an excellent candidate for optomechanics. The fast optical modulation of single-photon emission from BNNTs shows multiple electronic levels of the system and has potential applications in optical signal processing.
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Submitted 15 June, 2018;
originally announced June 2018.
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Towards the manipulation of topological states of matter: A perspective from electron transport
Authors:
Cheng Zhang,
Hai-Zhou Lu,
Shun-Qing Shen,
Yong P. Chen,
Faxian Xiu
Abstract:
The introduction of topological invariants, ranging from insulators to metals, has provided new insights into the traditional classification of electronic states in condensed matter physics. A sudden change in the topological invariant at the boundary of a topological nontrivial system leads to the formation of exotic surface states that are dramatically different from its bulk. In recent years, s…
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The introduction of topological invariants, ranging from insulators to metals, has provided new insights into the traditional classification of electronic states in condensed matter physics. A sudden change in the topological invariant at the boundary of a topological nontrivial system leads to the formation of exotic surface states that are dramatically different from its bulk. In recent years, significant advancements in the exploration of the physical properties of these topological systems and regarding device research related to spintronics and quantum computation have been made. Here, we review the progress of the characterization and manipulation of topological phases from the electron transport perspective and also the intriguing chiral/Majorana states that stem from them. We then discuss the future directions of research into these topological states and their potential applications.
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Submitted 30 May, 2018;
originally announced May 2018.
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Transport measurements in twisted bilayer graphene: Electron-phonon coupling and Landau level crossing
Authors:
Ting-Fung Chung,
Yang Xu,
Yong P. Chen
Abstract:
We investigate electronic transport in twisted bilayer graphene (tBLG) under variable temperatures ($T$), carrier densities ($n$), and transverse magnetic fields, focusing on samples with small-twist-angles ($θ$). These samples show prominent signatures associated with the van Hove singularities (VHSs) and superlattice-induced mini-gaps (SMGs). Temperature-dependent field effect measurement shows…
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We investigate electronic transport in twisted bilayer graphene (tBLG) under variable temperatures ($T$), carrier densities ($n$), and transverse magnetic fields, focusing on samples with small-twist-angles ($θ$). These samples show prominent signatures associated with the van Hove singularities (VHSs) and superlattice-induced mini-gaps (SMGs). Temperature-dependent field effect measurement shows that the difference between temperature-dependent resistivity and residual resistivity, $ρ_{xx}(n,T) - ρ_{0}(n)$, follows $~T^β$ for $n$ between the main Dirac point (DP) and SMG. The evolution of the temperature exponent $β$ with $n$ exhibits a W-shaped dependence, with minima of $β$ ~0.9 near the VHSs and maxima of $β$ ~1.7 toward the SMGs. This W-shaped behavior can be qualitatively understood with a theoretical picture that considers both the Fermi surface smearing near the VHSs and flexural-acoustic phonon scattering. In the quantum Hall regime, we observe only Landau level crossings in the massless Dirac spectrum originating from the main DP but not in the parabolic band near the SMG. Such crossings enable the measurement of an enhanced interlayer dielectric constant, attributed to a reduced Fermi velocity. Moreover, we measure the Fermi velocity, interlayer coupling strength, VHS energy relative to the DP, and gap size of SMG, four important parameters used to describe the peculiar band structure of the small-$θ$ tBLG.
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Submitted 23 August, 2018; v1 submitted 3 May, 2018;
originally announced May 2018.
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Anomalous low-temperature enhancement of supercurrent in topological-insulator nanoribbon Josephson junctions: evidence for low-energy Andreev bound states
Authors:
Morteza Kayyalha,
Mehdi Kargarian,
Aleksandr Kazakov,
Ireneusz Miotkowski,
Victor M. Galitski,
Victor M. Yakovenko,
Leonid P. Rokhinson,
Yong P. Chen
Abstract:
We report anomalous enhancement of the critical current at low temperatures in gate-tunable Josephson junctions made from topological insulator BiSbTeSe$_2$ nanoribbons with superconducting Nb electrodes. In contrast to conventional junctions, as a function of the decreasing temperature $T$, the increasing critical current $I_c$ exhibits a sharp upturn at a temperature $T_*$ around 20$\%$ of the j…
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We report anomalous enhancement of the critical current at low temperatures in gate-tunable Josephson junctions made from topological insulator BiSbTeSe$_2$ nanoribbons with superconducting Nb electrodes. In contrast to conventional junctions, as a function of the decreasing temperature $T$, the increasing critical current $I_c$ exhibits a sharp upturn at a temperature $T_*$ around 20$\%$ of the junction critical temperatures for several different samples and various gate voltages. The $I_c$ vs. $T$ demonstrates a short junction behavior for $T>T_*$, but crosses over to a long junction behavior for $T<T_*$ with an exponential $T$-dependence $I_c \propto \exp\big(-k_B T/δ\big)$, where $k_B$ is the Boltzmann constant. The extracted characteristic energy-scale $δ$ is found to be an order of magnitude smaller than the induced superconducting gap of the junction. We attribute the long-junction behavior with such a small $δ$ to low-energy Andreev bound states (ABS) arising from winding of the electronic wavefunction around the circumference of the topological insulator nanoribbon (TINR). Our TINR-based Josephson junctions with low-energy ABS are promising for future topologically protected devices that may host exotic phenomena such as Majorana fermions.
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Submitted 2 February, 2019; v1 submitted 7 December, 2017;
originally announced December 2017.
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Gate-tunable supercurrent and multiple Andreev reflections in a superconductor-topological insulator nanoribbon-superconductor hybrid device
Authors:
Luis A. Jauregui,
Morteza Kayyalha,
Aleksander Kazakov,
Ireneusz Miotkowski,
Leonid P. Rokhinson,
Yong P. Chen
Abstract:
We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MAR) in a bulk-insulating BiSbTeSe$_2$ topological insulator nanoribbon (TINR) Josephson junction (JJ) with superconducting Nb contacts. We observe a gate-tunable critical current ($I_C$) for gate voltages ($V_g$) above the charge neutrality point ($V_{CNP}$), with $I_C$ as large as 4…
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We report on the observation of gate-tunable proximity-induced superconductivity and multiple Andreev reflections (MAR) in a bulk-insulating BiSbTeSe$_2$ topological insulator nanoribbon (TINR) Josephson junction (JJ) with superconducting Nb contacts. We observe a gate-tunable critical current ($I_C$) for gate voltages ($V_g$) above the charge neutrality point ($V_{CNP}$), with $I_C$ as large as 430 nA. We also observe MAR peaks in the differential conductance ($dI/dV$) versus DC voltage ($V_{dc}$) across the junction corresponding to sub-harmonic peaks (at $V_{dc} = V_n = 2Δ_{Nb}/en$, where $Δ_{Nb}$ is the superconducting gap of the Nb contacts and $n$ is the sub-harmonic order). The sub-harmonic order, $n$, exhibits a $V_g$-dependence and reaches $n = 13$ for $V_g = 40$ V, indicating the high transparency of the Nb contacts to TINR. Our observations pave the way toward exploring the possibilities of using TINR in topologically protected devices that may host exotic physics such as Majorana fermions.
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Submitted 9 October, 2017;
originally announced October 2017.
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Coulomb drag and counterflow Seebeck coefficient in bilayer-graphene double layers
Authors:
Jiuning Hu,
Tailung Wu,
Jifa Tian,
Nikolai Klimov,
David Newell,
Yong P. Chen
Abstract:
We have fabricated bilayer-graphene double layers separated by a thin ($\sim$20 nm) boron nitride layer and performed Coulomb drag and counterflow thermoelectric transport measurements. The measured Coulomb drag resistivity is nearly three orders smaller in magnitude than the intralayer resistivities. The counterflow Seebeck coefficient is found to be well approximated by the difference between Se…
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We have fabricated bilayer-graphene double layers separated by a thin ($\sim$20 nm) boron nitride layer and performed Coulomb drag and counterflow thermoelectric transport measurements. The measured Coulomb drag resistivity is nearly three orders smaller in magnitude than the intralayer resistivities. The counterflow Seebeck coefficient is found to be well approximated by the difference between Seebeck coefficients of individual layers and exhibit a peak in the regime where two layers have opposite sign of charge carriers. The measured maximum counterflow power factor is $\sim$ 700 $μ$W/K$^2$cm at room temperature, promising high power output per mass for lightweight thermoelectric applications. Our devices open a possibility for exploring the novel regime of thermoelectrics with tunable interactions between n-type and p-type channels based on graphene and other two-dimensional materials and their heterostructures.
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Submitted 8 September, 2017;
originally announced September 2017.
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Cavity mediated manipulation of distant spin currents using cavity-magnon-polariton
Authors:
Lihui Bai,
Michael Harder,
Paul Hyde,
Zhaohui Zhang,
Can-Ming Hu,
Y. P. Chen,
John Q. Xiao
Abstract:
Using electrical detection of a strongly coupled spin-photon system comprised of a microwave cavity mode and two magnetic samples, we demonstrate the long distance manipulation of spin currents. This distant control is not limited by the spin diffusion length, instead depending on the interplay between the local and global properties of the coupled system, enabling systematic spin current control…
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Using electrical detection of a strongly coupled spin-photon system comprised of a microwave cavity mode and two magnetic samples, we demonstrate the long distance manipulation of spin currents. This distant control is not limited by the spin diffusion length, instead depending on the interplay between the local and global properties of the coupled system, enabling systematic spin current control over large distance scales (several centimeters in this work). This flexibility opens the door to improved spin current generation and manipulation for cavity spintronic devices.
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Submitted 1 June, 2017;
originally announced June 2017.
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Compressive mechanical response of graphene foams and their thermal resistance with copper interfaces
Authors:
Wonjun Park,
Xiangyu Li,
Nirajan Mandal,
Xiulin Ruan,
Yong P. Chen
Abstract:
We report compressive mechanical response of graphene foams (GFs) and the thermal resistance ($R_{TIM}$) between copper (Cu) and GFs, where GFs were prepared by the chemical vapor deposition (CVD) method. We observe that Young's modulus ($E_{GF}$) and compressive strength ($σ_{GF}$) of GFs have a power law dependence on increasing density ($ρ_{GF}$) of GFs. The maximum efficiency of absorbed energ…
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We report compressive mechanical response of graphene foams (GFs) and the thermal resistance ($R_{TIM}$) between copper (Cu) and GFs, where GFs were prepared by the chemical vapor deposition (CVD) method. We observe that Young's modulus ($E_{GF}$) and compressive strength ($σ_{GF}$) of GFs have a power law dependence on increasing density ($ρ_{GF}$) of GFs. The maximum efficiency of absorbed energy ($η_{max}$) for all GFs during the compression is larger than ~0.39. We also find that a GF with a higher $ρ_{GF}$ shows a larger $η_{max}$. In addition, we observe that the measured $R_{TIM}$ of Cu/GFs at room temperature with a contact pressure of 0.25 MP applied increases from ~50 to ~90 $mm^2K/W$ when $ρ_{GF}$ increases from 4.7 to 31.9 $mg/cm^3$.
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Submitted 24 February, 2017;
originally announced February 2017.
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Large Enhancement of Electronic Thermal Conductivity and Lorenz Number in Topological Insulator Bi2Te2Se Thin Films
Authors:
Zhe Luo,
Jifa Tian,
Mithun Srinivasan,
Yong P. Chen,
Xianfan Xu
Abstract:
Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly the effect of surface states are lacking. In this work, we studied thickness-dependent in-plane thermal conductivity of Bi2Te2Se TI thin films. A large enhancemen…
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Topological insulators (TI) have attracted extensive research effort due to their insulating bulk states but conducting surface states. However, investigation and understanding of thermal transport in topological insulators, particularly the effect of surface states are lacking. In this work, we studied thickness-dependent in-plane thermal conductivity of Bi2Te2Se TI thin films. A large enhancement of both thermal and electrical conductivity was observed for films with thicknesses below 20 nm, which is attributed to the surface states and bulk-insulating nature of these films. Surprisingly, a surface Lorenz number of over 10 times the Sommerfeld value was found. Transport measurements indicated that the surface is near the charge neutrality point when the film thickness is below 20 nm. Possible reasons for the large Lorenz number include the electrical and thermal current decoupling in the surface state Dirac fluid and the bipolar diffusion transport involving surface states.
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Submitted 6 February, 2017;
originally announced February 2017.
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arXiv:1701.00589
[pdf]
cond-mat.quant-gas
physics.atom-ph
physics.chem-ph
physics.optics
quant-ph
Two-photon photoassociation spectroscopy of an ultracold heteronuclear molecule
Authors:
Sourav Dutta,
Jesús Pérez-Ríos,
D. S. Elliott,
Yong P. Chen
Abstract:
We report on two-photon photoassociation (PA) spectroscopy of ultracold heteronuclear LiRb molecules. This is used to determine the binding energies of the loosely bound levels of the electronic ground singlet and the lowest triplet states of LiRb. We observe strong two-photon PA lines with power broadened line widths greater than 20 GHz at relatively low laser intensity of 30 W/cm$^{2}$. The impl…
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We report on two-photon photoassociation (PA) spectroscopy of ultracold heteronuclear LiRb molecules. This is used to determine the binding energies of the loosely bound levels of the electronic ground singlet and the lowest triplet states of LiRb. We observe strong two-photon PA lines with power broadened line widths greater than 20 GHz at relatively low laser intensity of 30 W/cm$^{2}$. The implication of this observation on direct atom to molecule conversion using stimulated Raman adiabatic passage (STIRAP) is discussed and the prospect for electronic ground state molecule production is theoretically analyzed.
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Submitted 3 January, 2017;
originally announced January 2017.
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Electrical spin injection into graphene from a topological insulator in a van der Waals heterostructure
Authors:
Jifa Tian,
Ting-Fung Chung,
Ireneusz Miotkowski,
Yong P. Chen
Abstract:
All-electrical (magnetic-material-free) spin injection is one of the outstanding goals in spintronics. Topological insulators (TIs) have been recognized as a promising electrically controlled spin source thanks to the strong spin-orbit coupling and in particular, the spin-momentum locked topological surface states (TSS) supporting helically spin polarized currents. Many TI materials such as Bi-bas…
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All-electrical (magnetic-material-free) spin injection is one of the outstanding goals in spintronics. Topological insulators (TIs) have been recognized as a promising electrically controlled spin source thanks to the strong spin-orbit coupling and in particular, the spin-momentum locked topological surface states (TSS) supporting helically spin polarized currents. Many TI materials such as Bi-based chalcogenides are also layered 2D materials and can be incorporated into van der Waals (vdW) coupled heterostructures, opening the possibility of the utilization of TIs for electrical spin injection into other 2D materials. Here, we demonstrate electrical injection of helically spin-polarized current into graphene through a 3D TI in a mechanically stacked heterostructure between Bi2Te2Se (a TI) and chemical vapor deposition (CVD)-grown graphene, using the spin potentiometric measurement. When a dc current is flowing from the TI to graphene, we detect a striking step-like voltage change (spin signal) in both the TI and graphene using ferromagnetic (FM) probes. The sign of the spin signal can be reversed by reversing the direction of the dc bias current, and the corresponding amplitude of the spin signal increases linearly with the bias current, indicative of a current-induced helical spin polarization in both TI and graphene. In contrast, the graphene itself exhibits usual nonlocal spin valve signal when the spins are injected using an FM electrode. We discuss possible origins of the helical spin polarization injected into the graphene in our TI/graphene heterostructure that may include TSS as well as the spin-orbit coupled Rashba states. Our findings show electrical injection of a spin helical current into graphene through a TI and demonstrate TIs as potential spin sources for future spintronic devices wherein spin manipulation is achieved electrically.
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Submitted 9 July, 2016;
originally announced July 2016.
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Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators
Authors:
Yang Xu,
Ireneusz Miotkowski,
Yong P. Chen
Abstract:
Topological insulators are a novel class of quantum matter with a gapped insulating bulk yet gapless spin helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a singl…
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Topological insulators are a novel class of quantum matter with a gapped insulating bulk yet gapless spin helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully-tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conducatance quantum at the double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction respectively. Such a system paves the way to explore rich physics ranging from topological magnetoelectric effects to exciton condensation.
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Submitted 9 May, 2016; v1 submitted 14 November, 2015;
originally announced November 2015.
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Experimental Observation of Two Massless Dirac-Fermion Gases in Graphene-Topological Insulator Heterostructure
Authors:
Guang Bian,
Ting-Fung Chung,
Chang Liu,
Chaoyu Chen,
Tay-Rong Chang,
Tailung Wu,
Ilya Belopolski,
Hao Zheng,
Su-Yang Xu,
Daniel S. Sanchez,
Nasser Alidoust,
Jonathan Pierce,
Bryson Quilliams,
Philip P. Barletta,
Stephane Lorcy,
Jose Avila,
Guoqing Chang,
Hsin Lin,
Horng-Tay Jeng,
Maria-Carmen Asensio,
Yong P. Chen,
M. Zahid Hasan
Abstract:
Graphene and topological insulators (TI) possess two-dimensional Dirac fermions with distinct physical properties. Integrating these two Dirac materials in a single device creates interesting opportunities for exploring new physics of interacting massless Dirac fermions. Here we report on a practical route to experimental fabrication of graphene-Sb2Te3 heterostructure. The graphene-TI heterostruct…
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Graphene and topological insulators (TI) possess two-dimensional Dirac fermions with distinct physical properties. Integrating these two Dirac materials in a single device creates interesting opportunities for exploring new physics of interacting massless Dirac fermions. Here we report on a practical route to experimental fabrication of graphene-Sb2Te3 heterostructure. The graphene-TI heterostructures are prepared by using a dry transfer of chemical-vapor-deposition grown graphene film. ARPES measurements confirm the coexistence of topological surface states of Sb2Te3 and Dirac π bands of graphene, and identify the twist angle in the graphene-TI heterostructure. The results suggest a potential tunable electronic platform in which two different Dirac low-energy states dominate the transport behavior.
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Submitted 7 November, 2015;
originally announced November 2015.
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High-performance Thermal Interface Material Based on Few-layer Graphene Composite
Authors:
Wonjun Park,
Yufen Guo,
Xiangyu Li,
Jiuning Hu,
Liwei Liu,
Xiulin Ruan,
Yong P. Chen
Abstract:
We developed high-performance thermal interface materials (TIMs) based on few-layer graphene (FLG) composite, where FLG was prepared by the interlayer catalytic exfoliation (ICE) method. We experimentally demonstrated feasibility of FLG composites as TIMs by investigating their thermal and mechanical properties, and reliability. We measured the thermal interface resistance ($R_{int}$) between FLG…
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We developed high-performance thermal interface materials (TIMs) based on few-layer graphene (FLG) composite, where FLG was prepared by the interlayer catalytic exfoliation (ICE) method. We experimentally demonstrated feasibility of FLG composites as TIMs by investigating their thermal and mechanical properties, and reliability. We measured the thermal interface resistance ($R_{int}$) between FLG composite TIMs (FLGTs) and copper and to be 3.2$\pm$1.7 and 4.3$\pm$1.4 $mm^2$K/W for 5 vol.% and 10 vol.% FLGTs at 330 K, respectively, comparable to or even lower than that of many commercial TIMs. In addition, the thermal conductivity ($κ_{TIM}$) of FLGTs is increased by an enhancement factor ($β$) of ~17 as the FLG concentration increases from 0 to 10 vol.%. We also characterized Vickers hardness and glass transition temperature ($T_g$) of our FLGTs. We find that our FLGTs are thermally and mechanically reliable within practical operating temperature and pressure ranges.
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Submitted 24 February, 2017; v1 submitted 31 October, 2015;
originally announced November 2015.
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Magneto-Infrared Spectroscopic Study of Ultrathin Bi$_{2}$Te$_{3}$ Single Crystals
Authors:
L. -C. Tung,
W. Yu,
P. Cadden-Zimansky,
I. Miotkowski,
Y. P. Chen,
D. Smirnov,
Z. Jiang
Abstract:
Ultrathin Bi$_{2}$Te$_{3}$ single crystals laid on Scotch tape are investigated by Fourier transform infrared spectroscopy at $4$K and in a magnetic field up to $35$T. The magneto-transmittance spectra of the Bi$_{2}$% Te$_{3}$/tape composite are analyzed as a two-layer system and the optical conductivity of Bi$_{2}$Te$_{3}$ at different magnetic fields are extracted. We find that magnetic field m…
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Ultrathin Bi$_{2}$Te$_{3}$ single crystals laid on Scotch tape are investigated by Fourier transform infrared spectroscopy at $4$K and in a magnetic field up to $35$T. The magneto-transmittance spectra of the Bi$_{2}$% Te$_{3}$/tape composite are analyzed as a two-layer system and the optical conductivity of Bi$_{2}$Te$_{3}$ at different magnetic fields are extracted. We find that magnetic field modifies the optical conductivity in the following ways: (1) Field-induced transfer of the optical weight from the lower frequency regime ($<250$cm$^{-1}$) to the higher frequency regime ($% >250$cm$^{-1}$) due to the redistribution of charge carriers across the Fermi surface. (2) Evolving of a Fano-resonance-like spectral feature from an anti-resonance to a resonance with increasing magnetic field. Such behavior can be attributed to the electron-phonon interactions between the $% E_{u}^{1}$ optical phonon mode and the continuum of electronic transitions. (3) Cyclotron resonance resulting from the inter-valence band Landau level transitions, which can be described by the electrodynamics of massive Dirac holes.
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Submitted 2 February, 2016; v1 submitted 19 August, 2015;
originally announced August 2015.
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Magneto-Infrared Study of Topological Insulator Bi2Se3
Authors:
W. Yu,
X. Chen,
Z. Jiang,
I. Miotkowski,
H. Cao,
Y. P. Chen,
D. Smirnov,
L. -C. Tung
Abstract:
We present a magneto-infrared spectroscopic study of thin Bi2Se3 single crystal flakes. Magneto-infrared transmittance and reflectance measurements are performed in the Faraday geometry at 4.2K in a magnetic field up to 17.5T. Thin Bi2Se3 flakes (much less than 1μm thick) are stabilized on the Scotch tape, and the reduced thickness enables us to obtain appreciable far-infrared transmission through…
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We present a magneto-infrared spectroscopic study of thin Bi2Se3 single crystal flakes. Magneto-infrared transmittance and reflectance measurements are performed in the Faraday geometry at 4.2K in a magnetic field up to 17.5T. Thin Bi2Se3 flakes (much less than 1μm thick) are stabilized on the Scotch tape, and the reduced thickness enables us to obtain appreciable far-infrared transmission through the highly reflective Bi2Se3 single crystals. A pronounced electron-phonon coupling is manifested as a Fano resonance at the α optical phonon mode in Bi2Se3, resulting from the quantum interference between the optical phonon mode and the continuum of the electronic states. However, the Fano resonance exhibits no systematic line broadening, in contrast to the earlier observation of a similar Fano resonance in Bi2Se3 using magneto-infrared reflectance spectroscopy.
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Submitted 19 August, 2015; v1 submitted 18 August, 2015;
originally announced August 2015.
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Plasmon Resonance in Multilayer Graphene Nanoribbons
Authors:
Naresh Kumar Emani,
Di Wang,
Ting-Fung Chung,
Ludmila J. Prokopeva,
Alexander V. Kildishev,
Vladimir M. Shalaev,
Yong P. Chen,
Alexandra Boltasseva
Abstract:
Plasmon resonance in nanopatterned single layer graphene nanoribbon (SL-GNR), double layer graphene nanoribbon (DL-GNR) and triple layer graphene nanoribbon (TL-GNR) structures is studied both experimentally and by numerical simulations. We use 'realistic' graphene samples in our experiments to identify the key bottle necks in both experiments and theoretical models. The existence of electrical tu…
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Plasmon resonance in nanopatterned single layer graphene nanoribbon (SL-GNR), double layer graphene nanoribbon (DL-GNR) and triple layer graphene nanoribbon (TL-GNR) structures is studied both experimentally and by numerical simulations. We use 'realistic' graphene samples in our experiments to identify the key bottle necks in both experiments and theoretical models. The existence of electrical tunable plasmons in such stacked multilayer GNRs was first experimentally verified by infrared microscopy. We find that the strength of the plasmonic resonance increases in DL-GNR when compared to SL-GNRs. However, we do not find a further such increase in TL-GNRs compared to DL-GNRs. We carried out systematic full wave simulations using finite element technique to validate and fit experimental results, and extract the carrier scattering rate as a fitting parameter. The numerical simulations show remarkable agreement with experiments for unpatterned SLG sheet, and a qualitative agreement for patterned graphene sheet. We believe that further improvements such as introducing a bandgap into the numerical model could lead to a better quantitative agreement of numerical simulations with experiments. We also note that such advanced modeling would first require better quality graphene samples and accurate measurements.
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Submitted 11 August, 2015;
originally announced August 2015.
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Observation of reduced 1/f noise in Graphene field effect transistors on Boron Nitride substrates
Authors:
Morteza Kayyalha,
Yong P. Chen
Abstract:
We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO2/Si. We associate this noise reduction to the lower densities of impurities and trap si…
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We have investigated the low frequency (f) flicker (also called 1/f) noise of single-layer graphene devices on h-BN (placed on SiO2/Si) along with those on SiO2/Si. We observe that the devices fabricated on h-BN have on average one order of magnitude lower noise amplitude compared with devices fabricated on SiO2/Si. We associate this noise reduction to the lower densities of impurities and trap sites in h-BN than in SiO2. Furthermore, the gate voltage dependent noise amplitude shows a broad maximum at Dirac point for devices on h-BN, in contrast to the M-shaped behavior showing a minimum at Dirac point for devices on SiO2, consistent with the reduced charge inhomogeneity (puddles) for graphene on h-BN. This study demonstrates that the use of h-BN as a substrate or dielectric can be a simple and efficient noise reduction technique valuable for electronic applications of graphene and other nanomaterials.
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Submitted 11 August, 2015;
originally announced August 2015.