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Corner Charge Fluctuations and Many-Body Quantum Geometry
Authors:
Xiao-Chuan Wu,
Kang-Le Cai,
Meng Cheng,
Prashant Kumar
Abstract:
In many-body systems with U(1) global symmetry, the charge fluctuations in a subregion reveal important insights into entanglement and other global properties. For subregions with sharp corners, bipartite fluctuations have been predicted to exhibit a universal shape dependence on the corner angle in certain quantum phases and transitions, characterized by a "universal angle function" and a "univer…
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In many-body systems with U(1) global symmetry, the charge fluctuations in a subregion reveal important insights into entanglement and other global properties. For subregions with sharp corners, bipartite fluctuations have been predicted to exhibit a universal shape dependence on the corner angle in certain quantum phases and transitions, characterized by a "universal angle function" and a "universal coefficient." However, we demonstrate that this simple formula is insufficient for charge insulators, including composite fermi liquids. In these systems, the corner contribution may depend on the corner angle, subregion orientation, and other microscopic details. We provide an infinite series representation of the corner term, introducing orientation-resolved universal angle functions with their non-universal coefficients. In the small-angle limit or under orientation averaging, the remaining terms' coefficients are fully determined by the many-body quantum metric, which, while not universal, adheres to both a universal topological lower bound and an energetic upper bound. We also clarify the conditions for bound saturation in (anisotropic) Landau levels, leveraging the generalized Kohn theorem and holomorphic properties of many-body wavefunctions. We find that a broad class of fractional quantum Hall wavefunctions, including unprojected parton states and composite-fermion Fermi sea wavefunctions, saturates the bounds.
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Submitted 28 August, 2024;
originally announced August 2024.
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Improved Long-Term Prediction of Chaos Using Reservoir Computing Based on Stochastic Spin-Orbit Torque Devices
Authors:
Cen Wang,
Xinyao Lei,
Kaiming Cai,
Xiaofei Yang,
Yue Zhang
Abstract:
Predicting chaotic systems is crucial for understanding complex behaviors, yet challenging due to their sensitivity to initial conditions and inherent unpredictability. Probabilistic Reservoir Computing (RC) is well-suited for long-term chaotic predictions by handling complex dynamic systems. Spin-Orbit Torque (SOT) devices in spintronics, with their nonlinear and probabilistic operations, can enh…
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Predicting chaotic systems is crucial for understanding complex behaviors, yet challenging due to their sensitivity to initial conditions and inherent unpredictability. Probabilistic Reservoir Computing (RC) is well-suited for long-term chaotic predictions by handling complex dynamic systems. Spin-Orbit Torque (SOT) devices in spintronics, with their nonlinear and probabilistic operations, can enhance performance in these tasks. This study proposes an RC system utilizing SOT devices for predicting chaotic dynamics. By simulating the reservoir in an RC network with SOT devices that achieve nonlinear resistance changes with random distribution, we enhance the robustness for the predictive capability of the model. The RC network predicted the behaviors of the Mackey-Glass and Lorenz chaotic systems, demonstrating that stochastic SOT devices significantly improve long-term prediction accuracy.
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Submitted 2 July, 2024;
originally announced July 2024.
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Disorder operators in 2D Fermi and non-Fermi liquids through multidimensional bosonization
Authors:
Kang-Le Cai,
Meng Cheng
Abstract:
Disorder operators are a type of non-local observables for quantum many-body systems, measuring the fluctuations of symmetry charges inside a region. It has been shown that disorder operators can reveal global aspects of many-body states that are otherwise difficult to access through local measurements. We study disorder operator for U(1) (charge or spin) symmetry in 2D Fermi and non-Fermi liquid…
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Disorder operators are a type of non-local observables for quantum many-body systems, measuring the fluctuations of symmetry charges inside a region. It has been shown that disorder operators can reveal global aspects of many-body states that are otherwise difficult to access through local measurements. We study disorder operator for U(1) (charge or spin) symmetry in 2D Fermi and non-Fermi liquid states, using the multidimensional bosonization formalism. For a region $A$, the logarithm of the charge disorder parameter in a Fermi liquid with isotropic interactions scales asympototically as $l_A\ln l_A$, with $l_A$ being the linear size of the region $A$. We calculate the proportionality coefficient in terms of Landau parameters of the Fermi liquid theory. We then study models of Fermi surface coupled to gapless bosonic fields realizing non-Fermi liquid states. In a simple spinless model, where the fermion density is coupled to a critical scalar, we find that at the quantum critical point, the scaling behavior of the charge disorder operators is drastically modified to $l_A \ln^2 l_A$. We also consider the composite Fermi liquid state and argue that the charge disorder operator scales as $l_A$.
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Submitted 5 April, 2024;
originally announced April 2024.
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Quantum Shortcut to Adiabaticity for State Preparation in a Finite-Sized Jaynes-Cummings Lattice
Authors:
Kang Cai,
Prabin Parajuli,
Anuvetha Govindarajan,
Lin Tian
Abstract:
In noisy quantum systems, achieving high-fidelity state preparation using the adiabatic approach faces a dilemma: either extending the evolution time to reduce diabatic transitions or shortening it to mitigate decoherence effects. Here, we present a quantum shortcut to adiabaticity for state preparation in a finite-sized Jaynes-Cummings lattice by applying counter-diabatic (CD) driving along given…
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In noisy quantum systems, achieving high-fidelity state preparation using the adiabatic approach faces a dilemma: either extending the evolution time to reduce diabatic transitions or shortening it to mitigate decoherence effects. Here, we present a quantum shortcut to adiabaticity for state preparation in a finite-sized Jaynes-Cummings lattice by applying counter-diabatic (CD) driving along given adiabatic trajectories. Leveraging the symmetry of eigenstates in our system, we convert the CD driving to an implementable Hamiltonian that only involves local qubit-cavity couplings for a two-site lattice with one polariton excitation. Additionally, we derive a partial analytical form of the CD driving for the lattice with two excitations. Our numerical results demonstrate that circuit errors and environmental noise have negligible effects on our scheme under practical parameters. We also show that our scheme can be characterized through the detection of qubit operators. This approach can lead to a promising pathway to high-fidelity state preparation in a significantly reduced timescale when compared to conventional adiabatic methods.
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Submitted 26 August, 2024; v1 submitted 19 February, 2024;
originally announced February 2024.
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Universal contributions to charge fluctuations in spin chains at finite temperature
Authors:
Kang-Le Cai,
Meng Cheng
Abstract:
At finite temperature, conserved charges undergo thermal fluctuations in a quantum many-body system in the grand canonical ensemble. The full structure of the fluctuations of the total U(1) charge $Q$ can be succinctly captured by the generating function $G(θ)=\left\langle e^{i θQ}\right\rangle$. For a 1D translation-invariant spin chain, in the thermodynamic limit the magnitude $|G(θ)|$ scales wi…
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At finite temperature, conserved charges undergo thermal fluctuations in a quantum many-body system in the grand canonical ensemble. The full structure of the fluctuations of the total U(1) charge $Q$ can be succinctly captured by the generating function $G(θ)=\left\langle e^{i θQ}\right\rangle$. For a 1D translation-invariant spin chain, in the thermodynamic limit the magnitude $|G(θ)|$ scales with the system size $L$ as $\ln |G(θ)|=-α(θ)L+γ(θ)$, where $γ(θ)$ is the scale-invariant contribution and may encode universal information about the underlying system. In this work we investigate the behavior and physical meaning of $γ(θ)$ when the system is periodic. We find that $γ(θ)$ only takes non-zero values at isolated points of $θ$, which is $θ=π$ for all our examples. In two exemplary lattice systems we show that $γ(π)$ takes quantized values when the U(1) symmetry exhibits a specific type of 't Hooft anomaly with other symmetries. In other cases, we investigate how $γ(θ)$ depends on microscopic conditions (such as the filling factor) in field theory and exactly solvable lattice models.
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Submitted 2 March, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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Energy-efficient superparamagnetic Ising machine and its application to traveling salesman problems
Authors:
Jia Si,
Shuhan Yang,
Yunuo Cen,
Jiaer Chen,
Zhaoyang Yao,
Dong-Jun Kim,
Kaiming Cai,
Jerald Yoo,
Xuanyao Fong,
Hyunsoo Yang
Abstract:
The growth of artificial intelligence and IoT has created a significant computational load for solving non-deterministic polynomial-time (NP)-hard problems, which are difficult to solve using conventional computers. The Ising computer, based on the Ising model and annealing process, has been highly sought for finding approximate solutions to NP-hard problems by observing the convergence of dynamic…
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The growth of artificial intelligence and IoT has created a significant computational load for solving non-deterministic polynomial-time (NP)-hard problems, which are difficult to solve using conventional computers. The Ising computer, based on the Ising model and annealing process, has been highly sought for finding approximate solutions to NP-hard problems by observing the convergence of dynamic spin states. However, it faces several challenges, including high power consumption due to artificial spins and randomness emulated by complex circuits, as well as low scalability caused by the rapidly growing connectivity when considering large-scale problems. Here, we present an experimental Ising annealing computer based on superparamagnetic tunnel junctions (SMTJs) with all-to-all connections, which successfully solves a 70-city travelling salesman problem (4761-node Ising problem). By taking advantage of the intrinsic randomness of SMTJs, implementing a proper global annealing scheme, and using an efficient algorithm, our SMTJ-based Ising annealer shows superior performance in terms of power consumption and energy efficiency compared to other Ising schemes. Additionally, our approach provides a promising way to solve complex problems with limited hardware resources. Moreover, we propose a crossbar array architecture for scalable integration using conventional magnetic random access memories. Our results demonstrate that the SMTJ-based Ising annealing computer with high energy efficiency, speed, and scalability is a strong candidate for future unconventional computing schemes.
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Submitted 20 June, 2023;
originally announced June 2023.
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Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Authors:
Vaishnavi Kateel,
Viola Krizakova,
Siddharth Rao,
Kaiming Cai,
Mohit Gupta,
Maxwel Gama Monteiro,
Farrukh Yasin,
Bart Sorée,
Johan De Boeck,
Sebastien Couet,
Pietro Gambardella,
Gouri Sankar Kar,
Kevin Garello
Abstract:
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications.…
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Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by shaping the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially non-uniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for developing purely current-driven SOT systems.
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Submitted 6 May, 2023;
originally announced May 2023.
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Band Engineering of Dirac Semimetals using Charge Density Waves
Authors:
Shiming Lei,
Samuel M. L. Teicher,
Andreas Topp,
Kehan Cai,
Jingjing Lin,
Fanny Rodolakis,
Jessica L. McChesney,
Maxim Krivenkov,
Dmitry Marchenko,
Andrei Varykhalov,
Christian R. Ast,
Roberto Car,
Jennifer Cano,
Maia G. Vergniory,
N. Phuan Ong,
Leslie M. Schoop
Abstract:
New developments in the field of topological matter are often driven by materials discovery, including novel topological insulators, Dirac semimetals and Weyl semimetals. In the last few years, large efforts have been performed to classify all known inorganic materials with respect to their topology. Unfortunately, a large number of topological materials suffer from non-ideal band structures. For…
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New developments in the field of topological matter are often driven by materials discovery, including novel topological insulators, Dirac semimetals and Weyl semimetals. In the last few years, large efforts have been performed to classify all known inorganic materials with respect to their topology. Unfortunately, a large number of topological materials suffer from non-ideal band structures. For example, topological bands are frequently convoluted with trivial ones, and band structure features of interest can appear far below the Fermi level. This leaves just a handful of materials that are intensively studied. Finding strategies to design new topological materials is a solution. Here we introduce a new mechanism that is based on charge density waves and non-symmorphic symmetry to design an idealized Dirac semimetal. We then show experimentally that the antiferromagnetic compound GdSb$_{0.46}$Te$_{1.48}$ is a nearly ideal Dirac semimetal based on the proposed mechanism, meaning that most interfering bands at the Fermi level are suppressed. Its highly unusual transport behavior points to a thus far unknown regime, in which Dirac carriers with Fermi energy very close to the node seem to gradually localize in the presence of lattice and magnetic disorder.
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Submitted 21 June, 2021; v1 submitted 1 September, 2020;
originally announced September 2020.
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Robust Preparation of Many-body Ground States in Jaynes-Cummings Lattices
Authors:
Kang Cai,
Prabin Parajuli,
Guilu Long,
Chee Wei Wong,
Lin Tian
Abstract:
Strongly-correlated polaritons in Jaynes-Cummings (JC) lattices can exhibit quantum phase transitions between the Mott-insulating and superfluid phases at integer fillings. The prerequisite to observe such phase transitions is to pump polariton excitations into a JC lattice and prepare them into appropriate ground states. Despite previous efforts, it is still challenging to generate many-body stat…
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Strongly-correlated polaritons in Jaynes-Cummings (JC) lattices can exhibit quantum phase transitions between the Mott-insulating and superfluid phases at integer fillings. The prerequisite to observe such phase transitions is to pump polariton excitations into a JC lattice and prepare them into appropriate ground states. Despite previous efforts, it is still challenging to generate many-body states with high accuracy. Here we present an approach for the robust preparation of many-body ground states of polaritons in finite-sized JC lattices by optimized nonlinear ramping. We apply a Landau-Zener type of estimation to this finite-sized system and derive the optimal ramping index for selected ramping trajectories, which can greatly improve the fidelity of the prepared states. With numerical simulation, we show that by choosing an appropriate ramping trajectory, the fidelity in this approach can remain close to unity in almost the entire parameter space. This approach can shed light on high-fidelity state preparation in quantum simulators and advance the implementation of quantum simulation with practical devices.
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Submitted 13 June, 2021; v1 submitted 4 July, 2020;
originally announced July 2020.
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Spin-orbit torque magnetization switching in MoTe2/permalloy heterostructures
Authors:
Shiheng Liang,
Shuyuan Shi,
Chuang-Han Hsu,
Kaiming Cai,
Yi Wang,
Pan He,
Yang Wu,
Vitor M. Pereira,
Hyunsoo Yang
Abstract:
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based switching requires harnessing both new materials and novel physics to obtain high charge-to-spin conversion efficiencies, thus making the choice of spin source crucial.…
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The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based switching requires harnessing both new materials and novel physics to obtain high charge-to-spin conversion efficiencies, thus making the choice of spin source crucial. Here we report the observation of spin-orbit torque switching in bilayers consisting of a semimetallic film of 1T'-MoTe2 adjacent to permalloy. Deterministic switching is achieved without external magnetic fields at room temperature, and the switching occurs with currents one order of magnitude smaller than those typical in devices using the best-performing heavy metals. The thickness dependence can be understood if the interfacial spin-orbit contribution is considered in addition to the bulk spin Hall effect. Further threefold reduction in the switching current is demonstrated with resort to dumbbell-shaped magnetic elements. These findings foretell exciting prospects of using MoTe2 for low-power semimetal material based spin devices.
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Submitted 30 June, 2020;
originally announced June 2020.
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Real-time estimation of the optically detected magnetic resonance shift in diamond quantum thermometry
Authors:
Masazumi Fujiwara,
Alexander Dohms,
Ken Suto,
Yushi Nishimura,
Keisuke Oshimi,
Yoshio Teki,
Kai Cai,
Oliver Benson,
Yutaka Shikano
Abstract:
We investigate the real-time estimation protocols for the frequency shift of optically detected magnetic resonance (ODMR) of nitrogen-vacancy (NV) centers in nanodiamonds (NDs). Efficiently integrating multipoint ODMR measurements and ND particle tracking into fluorescence microscopy has recently demonstrated stable monitoring of the temperature inside living animals. We analyze the multipoint ODM…
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We investigate the real-time estimation protocols for the frequency shift of optically detected magnetic resonance (ODMR) of nitrogen-vacancy (NV) centers in nanodiamonds (NDs). Efficiently integrating multipoint ODMR measurements and ND particle tracking into fluorescence microscopy has recently demonstrated stable monitoring of the temperature inside living animals. We analyze the multipoint ODMR measurement techniques (3-, 4-, and 6-point methods) in detail and quantify the amount of measurement artifact owing to several systematic errors derived from instrumental errors of experimental hardware and ODMR spectral shape. We propose a practical approach to minimize the effect of these factors, which allows for measuring accurate temperatures of single NDs during dynamic thermal events. We also discuss integration of noise filters, data estimation protocols, and possible artifacts for further developments in real-time temperature estimation. The present study provides technical details of quantum diamond thermometry and discusses factors that may affect the temperature estimation in biological applications.
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Submitted 11 June, 2020;
originally announced June 2020.
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Electrical generation and detection of terahertz signal based on spin-wave emission from ferrimagnets
Authors:
Zhifeng Zhu,
Kaiming Cai,
Jiefang Deng,
Venkata Pavan Kumar Miriyala,
Hyunsoo Yang,
Xuanyao Fong,
Gengchiau Liang
Abstract:
Terahertz (THz) signals, mainly generated by photonic or electronic approaches, are being sought for various applications, whereas the development of magnetic source might be a necessary step to harness the magnetic nature of electromagnetic radiation. We show that the relativistic effect on the current-driven domain-wall motion induces THz spin-wave emission in ferrimagnets. The required current…
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Terahertz (THz) signals, mainly generated by photonic or electronic approaches, are being sought for various applications, whereas the development of magnetic source might be a necessary step to harness the magnetic nature of electromagnetic radiation. We show that the relativistic effect on the current-driven domain-wall motion induces THz spin-wave emission in ferrimagnets. The required current density increases dramatically in materials with strong exchange interaction and rapidly exceeds 1012 A m-2, leading to the device breakdown and thus the lack of experimental evidence. By translating the collective magnetization oscillations into voltage signals, we propose a three-terminal device for the electrical detection of THz spin wave. Through material engineering, wide frequency range from 264 GHz to 1.1 THz and uniform continuous signals with improved output power can be obtained. As a reverse effect, the spin wave generated in this system is able to move ferrimagnetic domain wall. Our work provides guidelines for the experimental verification of THz spin wave, and could stimulate the design of THz spintronic oscillators for wideband applications as well as the all-magnon spintronic devices.
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Submitted 17 March, 2020;
originally announced March 2020.
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Correlating Structural, Electronic, and Magnetic Properties of Epitaxial VSe2 Thin Films
Authors:
Guannan Chen,
Sean T. Howard,
Aniceto B. Maghirang III,
Kien Nguyen Cong,
Kehan Cai,
Somesh C. Ganguli,
Waclaw Sweich,
Emilia Morosan,
Ivan I. Oleynik,
Feng-Chuan Chuang,
Hsin Lin,
Vidya Madhavan
Abstract:
The electronic and magnetic properties of transition metal dichalcogenides are known to be extremely sensitive to their structure. In this paper we study the effect of structure on the electronic and magnetic properties of mono- and bilayer $VSe_2$ films grown using molecular beam epitaxy. $VSe_2$ has recently attracted much attention due to reports of emergent ferromagnetism in the 2D limit. To u…
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The electronic and magnetic properties of transition metal dichalcogenides are known to be extremely sensitive to their structure. In this paper we study the effect of structure on the electronic and magnetic properties of mono- and bilayer $VSe_2$ films grown using molecular beam epitaxy. $VSe_2$ has recently attracted much attention due to reports of emergent ferromagnetism in the 2D limit. To understand this important compound, high quality 1T and distorted 1T films were grown at temperatures of 200 $^\text{o}$C and 450 $^\text{o}$C respectively and studied using 4K Scanning Tunneling Microscopy/Spectroscopy. The measured density of states and the charge density wave (CDW) patterns were compared to band structure and phonon dispersion calculations. Films in the 1T phase reveal different CDW patterns in the first layer compared to the second. Interestingly, we find the second layer of the 1T-film shows a CDW pattern with 4a $\times$ 4a periodicity which is the 2D version of the bulk CDW observed in this compound. Our phonon dispersion calculations confirm the presence of a soft phonon at the correct wavevector that leads to this CDW. In contrast, the first layer of distorted 1T phase films shows a strong stripe feature with varying periodicities, while the second layer displays no observable CDW pattern. Finally, we find that the monolayer 1T $VSe_2$ film is weakly ferromagnetic, with ~ $3.5 μ_B$ per unit similar to previous reports.
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Submitted 2 January, 2020; v1 submitted 29 December, 2019;
originally announced December 2019.
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Nonlinear magnetotransport shaped by Fermi surface topology and convexity in WTe2
Authors:
Pan He,
Chuang-Han Hsu,
Shuyuan Shi,
Kaiming Cai,
Junyong Wang,
Qisheng Wang,
Goki Eda,
Hsin Lin,
Vitor M. Pereira,
Hyunsoo Yang
Abstract:
The nature of Fermi surface defines the physical properties of conductors and many physical phenomena can be traced to its shape. Although the recent discovery of a current-dependent nonlinear magnetoresistance in spin-polarized non-magnetic materials has attracted considerable attention in spintronics, correlations between this phenomenon and the underlying fermiology remain unexplored. Here, we…
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The nature of Fermi surface defines the physical properties of conductors and many physical phenomena can be traced to its shape. Although the recent discovery of a current-dependent nonlinear magnetoresistance in spin-polarized non-magnetic materials has attracted considerable attention in spintronics, correlations between this phenomenon and the underlying fermiology remain unexplored. Here, we report the observation of nonlinear magnetoresistance at room temperature in a semimetal WTe2, with an interesting temperature-driven inversion. Theoretical calculations reproduce the nonlinear transport measurements and allow us to attribute the inversion to temperature-induced changes in Fermi surface convexity. We also report a large anisotropy of nonlinear magnetoresistance in WTe2, due to its low symmetry of Fermi surfaces. The good agreement between experiments and theoretical modeling reveals the critical role of Fermi surface topology and convexity on the nonlinear magneto-response. These results lay a new path to explore ramifications of distinct fermiology for nonlinear transport in condensed-matter.
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Submitted 29 April, 2019;
originally announced April 2019.
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Recent advances in spin-orbit torques: Moving towards device applications
Authors:
Rajagopalan Ramaswamy,
Jong Min Lee,
Kaiming Cai,
Hyunsoo Yang
Abstract:
The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as, magnetic random access memories and boosted the spintronic research area. In this regard, over the last decade, magnetization manipulation using spin-orbit torque has been devoted a lot of research attention as it shows a great promise for future ul…
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The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as, magnetic random access memories and boosted the spintronic research area. In this regard, over the last decade, magnetization manipulation using spin-orbit torque has been devoted a lot of research attention as it shows a great promise for future ultrafast and power efficient magnetic memories. In this review, we summarize the latest advancements in spin-orbit torque research and highlight some of the technical challenges for practical spin-orbit torque devices. We will first introduce the basic concepts and highlight the latest material choices for spin-orbit torque devices. Then, we will summarize the important advancements in the study of magnetization switching dynamics using spin-orbit torque, which are important from scientific as well as technological aspect. The final major section focuses on the concept of external assist field free spin-orbit torque switching which is a requirement for practical spin-orbit torque devices.
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Submitted 21 August, 2018;
originally announced August 2018.
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Field-free spin-orbit torque switching from geometrical domain wall pinning
Authors:
Jong Min Lee,
Kaiming Cai,
Guang Yang,
Yang Liu,
Rajagopalan Ramaswamy,
Pan He,
Hyunsoo Yang
Abstract:
Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to achieve a deterministic switching is an obstacle for realizing practical spin-orbit torque devices with all-electric operation. Here, we report a field-free spin-orb…
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Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to achieve a deterministic switching is an obstacle for realizing practical spin-orbit torque devices with all-electric operation. Here, we report a field-free spin-orbit torque switching by exploiting the domain wall motion in an anti-notched microwire with perpendicular anisotropy, which exhibits multi-domain states stabilized by the domain wall surface tension. The combination of spin-orbit torque, Dzyaloshinskii-Moriya interaction, and domain wall surface tension induced geometrical pinning allows a deterministic control of the domain wall and offers a novel method to achieve a field-free spin-orbit torque switching. Our work demonstrates the proof of concept of a perpendicular memory cell which can be readily adopted in a three-terminal magnetic memory.
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Submitted 17 July, 2018;
originally announced July 2018.
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Observation of out-of-plane spin texture in a SrTiO3 (111) two-dimensional electron gas
Authors:
Pan He,
S. McKeown Walker,
Steven S. -L. Zhang,
F. Y. Bruno,
M. S. Bahramy,
Jongmin Lee,
Rajagopalan Ramaswamy,
Kaiming Cai,
Olle Heinonen,
Giovanni Vignale,
F. Baumberger,
Hyunsoo Yang
Abstract:
We explore the second order bilinear magnetoelectric resistance (BMER) effect in the d-electron-based two-dimensional electron gas (2DEG) at the SrTiO3 (111) surface. We find an evidence of a spin-split band structure with the archetypal spin-momentum locking of the Rashba effect for the in-plane component. Under an out-of-plane magnetic field, we find a BMER signal that breaks the six-fold symmet…
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We explore the second order bilinear magnetoelectric resistance (BMER) effect in the d-electron-based two-dimensional electron gas (2DEG) at the SrTiO3 (111) surface. We find an evidence of a spin-split band structure with the archetypal spin-momentum locking of the Rashba effect for the in-plane component. Under an out-of-plane magnetic field, we find a BMER signal that breaks the six-fold symmetry of the electronic dispersion, which is a fingerprint for the presence of a momentum dependent out-of-plane spin component. Relativistic electronic structure calculations reproduce this spin-texture and indicate that the out-of-plane component is a ubiquitous property of oxide 2DEGs arising from strong crystal field effects. We further show that the BMER response of the SrTiO3 (111) 2DEG is tunable and unexpectedly large.
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Submitted 5 June, 2018;
originally announced June 2018.
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Structures and Physical Properties of CsV$_2$Se$_{2-x}$O and V$_2$Se$_2$O
Authors:
Hai Lin,
Jin Si,
Xiyu Zhu,
Kehan Cai,
Hao Li,
Lu Kong,
Xiaodong Yu,
Hai-Hu Wen
Abstract:
By using solid-state reactions, we successfully synthesize new oxyselenides CsV$_2$Se$_{2-x}$O (x = 0, 0.5). These compounds containing V$_2$O planar layers with a square lattice crystallize in the CeCr$_2$Si$_2$C structure with the space group of $P4/mmm$. Another new compound V$_2$Se$_2$O which crystallizes in space group $I4/mmm$ is fabricated by topochemical deintercalation of cesium from CsV…
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By using solid-state reactions, we successfully synthesize new oxyselenides CsV$_2$Se$_{2-x}$O (x = 0, 0.5). These compounds containing V$_2$O planar layers with a square lattice crystallize in the CeCr$_2$Si$_2$C structure with the space group of $P4/mmm$. Another new compound V$_2$Se$_2$O which crystallizes in space group $I4/mmm$ is fabricated by topochemical deintercalation of cesium from CsV$_2$Se$_2$O powder with iodine in tetrahydrofuran(THF). Resistivity measurements show a semiconducting behavior for CsV$_2$Se$_2$O, while a metallic behavior for CsV$_2$Se$_{1.5}$O, and an insulating feature for V$_2$Se$_2$O. A charge- or spin-density wave-like anomaly has been observed at 168 K for CsV$_2$Se$_2$O and 150 K for CsV$_2$Se$_{1.5}$O, respectively. And these anomalies are also confirmed by the magnetic susceptibility measurements. The resistivity in V$_2$Se$_2$O exhibits an anomalous log(1/$T$) temperature dependence, which is similar to the case in parent phase or very underdoped cuprates indicating the involvement of strong correlation. Magnetic susceptibility measurements show that the magnetic moment per V-site in V$_2$Se$_2$O is much larger than that of CsV$_2$Se$_{2-x}$O, which again suggests the correlation induced localization effect in the former.
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Submitted 1 March, 2018;
originally announced March 2018.
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Room-temperature nanoseconds spin relaxation in WTe2 and MoTe2 thin films
Authors:
Qisheng Wang,
Jie Li,
Jean Besbas,
Chuang-Han Hsu,
Kaiming Cai,
Li Yang,
Shuai Cheng,
Yang Wu,
Wenfeng Zhang,
Kaiyou Wang,
Tay-Rong Chang,
Hsin Lin,
Haixin Chang,
Hyunsoo Yang
Abstract:
The Weyl semimetal WTe2 and MoTe2 show great potential in generating large spin currents since they possess topologically-protected spin-polarized states and can carry a very large current density. In addition, the intrinsic noncentrosymmetry of WTe2 and MoTe2 endows with a unique property of crystal symmetry-controlled spin-orbit torques. An important question to be answered for developing spintr…
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The Weyl semimetal WTe2 and MoTe2 show great potential in generating large spin currents since they possess topologically-protected spin-polarized states and can carry a very large current density. In addition, the intrinsic noncentrosymmetry of WTe2 and MoTe2 endows with a unique property of crystal symmetry-controlled spin-orbit torques. An important question to be answered for developing spintronic devices is how spins relax in WTe2 and MoTe2. Here, we report a room-temperature spin relaxation time of 1.2 ns (0.4 ns) in WTe2 (MoTe2) thin film using the time-resolved Kerr rotation (TRKR). Based on ab initio calculation, we identify a mechanism of long-lived spin polarization resulting from a large spin splitting around the bottom of the conduction band, low electron-hole recombination rate and suppression of backscattering required by time-reversal and lattice symmetry operation. In addition, we find the spin polarization is firmly pinned along the strong internal out-of-plane magnetic field induced by large spin splitting. Our work provides an insight into the physical origin of long-lived spin polarization in Weyl semimetals which could be useful to manipulate spins for a long time at room temperature.
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Submitted 1 March, 2018;
originally announced March 2018.
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Oscillatory spin-orbit torque switching induced by field-like torques
Authors:
Jong Min Lee,
Jae Hyun Kwon,
Rajagopalan Ramaswamy,
Jung Bum Yoon,
Jaesung Son,
Xuepeng Qiu,
Rahul Mishra,
Shalabh Srivastava,
Kaiming Cai,
Hyunsoo Yang
Abstract:
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching characteristics over time, therefore, it is limited to bipolar operation where a change in polarity of the applied current or field is required for bistable switching. T…
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Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching characteristics over time, therefore, it is limited to bipolar operation where a change in polarity of the applied current or field is required for bistable switching. The coherent rotation based oscillatory switching schemes cannot be applied to SOT because the SOT switching occurs through expansion of magnetic domains. Here, we experimentally achieve oscillatory switching in incoherent SOT process by controlling domain wall dynamics. We find that a large field-like component can dynamically influence the domain wall chirality which determines the direction of SOT switching. Consequently, under nanosecond current pulses, the magnetization switches alternatively between the two stable states. By utilizing this oscillatory switching behavior we demonstrate a unipolar deterministic SOT switching scheme by controlling the current pulse duration.
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Submitted 14 November, 2017;
originally announced November 2017.
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Interfacial thermal conductance in graphene/black phosphorus heterogeneous structures
Authors:
Yang Chen,
Yingyan Zhang,
Kun Cai,
Jinwu Jiang,
Jin-cheng Zheng,
Junhua Zhao,
Ning Wei
Abstract:
Graphene, as a passivation layer, can be used to protect the black phosphorus from the chemical reaction with surrounding oxygen and water. However, black phosphorus and graphene heterostructures have low efficiency of heat dissipation due to its intrinsic high thermal resistance at the interfaces. The accumulated energy from Joule heat has to be removed efficiently to avoid the malfunction of the…
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Graphene, as a passivation layer, can be used to protect the black phosphorus from the chemical reaction with surrounding oxygen and water. However, black phosphorus and graphene heterostructures have low efficiency of heat dissipation due to its intrinsic high thermal resistance at the interfaces. The accumulated energy from Joule heat has to be removed efficiently to avoid the malfunction of the devices. Therefore, it is of significance to investigate the interfacial thermal dissipation properties and manipulate the properties by interfacial engineering on demand. In this work, the interfacial thermal conductance between few-layer black phosphorus and graphene is studied extensively using molecular dynamics simulations. Two critical parameters, the critical power Pcr to maintain thermal stability and the maximum heat power density Pmax with which the system can be loaded, are identified. Our results show that interfacial thermal conductance can be effectively tuned in a wide range with external strains and interracial defects. The compressive strain can enhance the interfacial thermal conductance by one order of magnitude, while interface defects give a two-fold increase. These findings could provide guidelines in heat dissipation and interfacial engineering for thermal conductance manipulation of black phosphorus-graphene heterostructure-based devices.
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Submitted 17 November, 2016;
originally announced November 2016.
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Mechanical behavior of composite double wall nanotubes from carbon and phosphorous
Authors:
Kun Cai,
Jing Wan,
Likui Yang,
Ning Wei
Abstract:
Black phosphorus is not stable when it is exposed to air. When covered or terminated by single layer carbon atoms, such as graphene carbon nanotube, it is more strongly protected in the rapid degradation than the bare black phosphorus. Moreover, due to weak interaction between phosphorus atoms in black phosphorene, the nanotube obtained by curling single layer black phosphorus is not as stable as…
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Black phosphorus is not stable when it is exposed to air. When covered or terminated by single layer carbon atoms, such as graphene carbon nanotube, it is more strongly protected in the rapid degradation than the bare black phosphorus. Moreover, due to weak interaction between phosphorus atoms in black phosphorene, the nanotube obtained by curling single layer black phosphorus is not as stable as a carbon nanotube at finite temperature. In present work, we recommend a new 1D material, i.e., composite double wall nanotubes from a black phosphorus nanotube with a CNT. The dynamic response of the composite DWNTs is simulated using molecular dynamics approach. The effects of such factors as temperature, slenderness and configurations of DWNTs are discussed. Comparing with a single wall BPNT, the composite DWNTs under uniaxial compression shows some peculiar properties. When the BPNT is embedded in a CNT, the system will not collapse rapidly even if the BPNT has been damaged seriously.
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Submitted 15 July, 2016;
originally announced July 2016.
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Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure
Authors:
Kaiming Cai,
Meiyin Yang,
Hailang Ju,
Kevin William Edmonds,
Baohe Li,
Yu Sheng,
Bao Zhang,
Nan Zhang,
Shuai Liu,
Yang Ji,
Houzhi Zheng,
Kaiyou Wang
Abstract:
All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and recently are heading toward deterministic switching without external magnetic field. Here…
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All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy metal/ferromagnet structures have been proposed with magnetic field, and recently are heading toward deterministic switching without external magnetic field. Here we demonstrate that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and realize the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/Co/Pt layers on PMN-PT substrate. The effective magnetic field can be reversed by changing the direction of the applied electric field on the PMN-PT substrate, which fully replaces the controllability function of the external magnetic field. The electric field is found to generate an additional spin-orbit torque on the CoNiCo magnets, which is confirmed by macrospin calculations.
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Submitted 19 April, 2016;
originally announced April 2016.
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Strength and Stability Analysis of a Single Walled Black Phosphorus Tube under Axial Compression
Authors:
Kun Cai,
Jing Wan,
Ning Wei,
Qinghua Qin
Abstract:
Few-layered black phosphorus materials recently attract much attention due to its special electronic properties. As a Consequence, the nano-tube from a single-layer black phosphorus has been theoretically built. The corresponding electronic properties of such black phosphorus nano-tube were also evaluated numerically.
Few-layered black phosphorus materials recently attract much attention due to its special electronic properties. As a Consequence, the nano-tube from a single-layer black phosphorus has been theoretically built. The corresponding electronic properties of such black phosphorus nano-tube were also evaluated numerically.
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Submitted 28 March, 2016;
originally announced March 2016.
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Thermal stability of a free nanotube from single-layer black phosphorus
Authors:
Kun Cai,
Jing Wan,
Ning Wei,
Haifang Cai,
Qing-Hua Qin
Abstract:
Similar to the carbon nanotube fabricated from graphene sheet, a black phosphorus nanotube (BPNT) also can theoretically be produced by curling the rectangular single-layer black phosphorus (SLBP). In present study, the effect of thermal vibration of atoms on the failure of a BPNT is investigated using molecular dynamics simulations. Two types of double-shell BPNTs, which are obtained by curling t…
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Similar to the carbon nanotube fabricated from graphene sheet, a black phosphorus nanotube (BPNT) also can theoretically be produced by curling the rectangular single-layer black phosphorus (SLBP). In present study, the effect of thermal vibration of atoms on the failure of a BPNT is investigated using molecular dynamics simulations. Two types of double-shell BPNTs, which are obtained by curling the rectangular SLBP along its armchair/pucker direction and zigzag direction (in-plane normal) respectively, are involved in simulation. At finite temperature, a bond on the outer shell of tube is under tension due to both of curvature of tube and serious thermal vibration of atoms. As the length of a bond with such elongation approaches its critical value, i.e., 0.279 nm, or the smallest distance between two nonbonding phosphorus atoms is over 0.389nm caused by great variation of bond angle, the tube fails quickly. The critical stable states of either an armchair or a zigzag BPNT at finite temperature are calculated and compared. To achieve a stable BPNT with high robustness, the curvature of the tube should be reduced or the tube should work at a lower temperature. Only when the BPNT has structural stability, it has a potential application as a nanowire in a future nano electro-mechanical system (NEMS).
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Submitted 22 December, 2015;
originally announced December 2015.
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Piezo Voltage Controlled Planar Hall Effect Devices
Authors:
Bao Zhang,
Kangkang Meng,
Mei-Yin Yang,
K. W. Edmonds,
Hao Zhang,
Kai-Ming Cai,
Yu Sheng,
Nan Zhang,
Yang Ji,
Jian-Hua Zhao,
Kai-You Wang
Abstract:
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT) /ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90 in the plane un…
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The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT) /ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90 in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.
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Submitted 29 July, 2016; v1 submitted 20 December, 2015;
originally announced December 2015.
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Thermal conductivity of graphene kirigami: ultralow and strain robustness
Authors:
Ning Wei,
Yang Chen,
Kun Cai,
HuiQiong Wang,
Junhua Zhao,
Jin-Cheng Zheng
Abstract:
Kirigami structure, from the macro- to the nanoscale, exhibits distinct and tunable properties from original 2-dimensional sheet by tailoring. In present work, the extreme reduction of the thermal conductivity by tailoring sizes in graphene nanoribbon kirigami (GNR-k) is demonstrated using nonequilibrium molecular dynamics simulations. The results show that the thermal conductivity of GNR-k (aroun…
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Kirigami structure, from the macro- to the nanoscale, exhibits distinct and tunable properties from original 2-dimensional sheet by tailoring. In present work, the extreme reduction of the thermal conductivity by tailoring sizes in graphene nanoribbon kirigami (GNR-k) is demonstrated using nonequilibrium molecular dynamics simulations. The results show that the thermal conductivity of GNR-k (around 5.1 Wm-1K-1) is about two orders of magnitude lower than that of the pristine graphene nanoribbon (GNR) (around 151.6 Wm-1K-1), while the minimum value is expected to be approaching zero in extreme case from our theoretical model. To explore the origin of the reduction of the thermal conductivity, the micro-heat flux on each atoms of GNR-k has been further studied. The results attribute the reduction of the thermal conductivity to three main sources as: the elongation of real heat flux path, the overestimation of real heat flux area and the phonon scattering at the vacancy of the edge. Moreover, the strain engineering effect on the thermal conductivity of GNR-k and a thermal robustness property has been investigated. Our results provide physical insights into the origins of the ultralow and robust thermal conductivity of GNR-k, which also suggests that the GNR-k can be used for nanaoscale heat management and thermoelectric application.
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Submitted 14 December, 2015;
originally announced December 2015.
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Longitudinal Spin Seebeck Effect in Silver Strip on CoFe Film
Authors:
Y. Sheng,
M. Y. Yang,
Y. Cao,
K. M. Cai,
G. N. Wei,
G. H. Yu,
B. Zhang,
X. Q. Ma,
K. Y. Wang
Abstract:
We report the experimental observation of the spin Seebeck effect (SSE) in Ag/CoFe noble metal/magnetic metal bilayers with a longitudinal structure. Thermal voltages jointly generated by the anomalous Nernst effect (ANE) and the SSE were detected across the Ag/CoFe/Cu strip with a perpendicular thermal gradient. To effectively separate the SSE and the ANE part of the thermal voltages, we compared…
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We report the experimental observation of the spin Seebeck effect (SSE) in Ag/CoFe noble metal/magnetic metal bilayers with a longitudinal structure. Thermal voltages jointly generated by the anomalous Nernst effect (ANE) and the SSE were detected across the Ag/CoFe/Cu strip with a perpendicular thermal gradient. To effectively separate the SSE and the ANE part of the thermal voltages, we compared the experimental results between the Ag/CoFe/Cu strip and Cu/CoFe/Cu strip, where two samples processed with the heating power instead of the temperature difference through the thin CoFe film. The respective contributions of the ANE and SSE to thermal voltage were determined, and they have the ratio of 4:1. The spin current injected through CoFe/Ag interface is calculated to be 1.76 mA/W.
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Submitted 28 October, 2015;
originally announced October 2015.
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Spin-orbit torque in Pt/CoNiCo/Pt symmetric devices
Authors:
Meiyin Yang,
Kaiming Cai,
Hailang Ju,
Kevin William Edmonds,
Guang Yang,
Shuai Liu,
Baohe Li,
Bao Zhang,
Yu Sheng,
Shouguo Wang,
Yang Ji,
Kaiyou Wang
Abstract:
Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like torques to the magnetization switching induced by the electrical current are still under debate. Here, we describe a device based on a symmetric Pt/FM/Pt structure,…
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Current induced magnetization switching by spin-orbit torques offers an energy-efficient means of writing information in heavy metal/ferromagnet (FM) multilayer systems. The relative contributions of field-like torques and damping-like torques to the magnetization switching induced by the electrical current are still under debate. Here, we describe a device based on a symmetric Pt/FM/Pt structure, in which we demonstrate a strong damping-like torque from the spin Hall effect and unmeasurable field-like torque from Rashba effect. The spin-orbit effective fields due to the spin Hall effect were investigated quantitatively and were found to be consistent with the switching effective fields after accounting for the switching current reduction due to thermal fluctuations from the current pulse. A non-linear dependence of deterministic switching of average Mz on the in-plane magnetic field was revealed, which could be explained and understood by micromagnetic simulation.
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Submitted 8 October, 2015;
originally announced October 2015.
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Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes
Authors:
Wengang Luo,
Yufei Cao,
Pingan Hu,
Kaiming Cai,
Qi Feng,
Faguang Yan,
Tengfei Yan,
Xinhui Zhang,
Kaiyou Wang
Abstract:
In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As expected, the response speed of InSe/graphene photodetectors is down to 120 μs, which is about 40 times faster than that of our InSe/metal device. And it can also be…
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In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As expected, the response speed of InSe/graphene photodetectors is down to 120 μs, which is about 40 times faster than that of our InSe/metal device. And it can also be tuned by the back-gate voltage from 310 μs down to 100 μs. With high response speed, the photoresponsivity can reach as high as 60 AW-1 simultaneously. Meanwhile the InSe/graphene photodetectors possess a broad spectral range at 400-1000 nm. The design of 2D crystal/graphene electrical contacts could be important for high performance optoelectronic devices.
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Submitted 30 June, 2015; v1 submitted 16 January, 2015;
originally announced January 2015.
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Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors
Authors:
Yufei Cao,
Kaiming Cai,
Pingan Hu,
Lixia Zhao,
Tengfei Yan,
Xinhui Zhang,
Xiaoguang Wu,
Kaiyou Wang,
Houzhi Zheng
Abstract:
A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to absorb sufficient light to maintain high photoresponsivity and reduce the dark current. However, this will limit the optoelectronic integration density. Through spa…
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A critical challenge for the integration of the optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. It is generally believed that a large electrodes spacing in photodetectors is required to absorb sufficient light to maintain high photoresponsivity and reduce the dark current. However, this will limit the optoelectronic integration density. Through spatially resolved photocurrent investigation, we find that the photocurrent in metal-semiconductor-metal (MSM) photodetectors based on layered GaSe is mainly generated from the photoexcited carriers close to the metal-GaSe interface and the photocurrent active region is always close to the Schottky barrier with higher electrical potential. The photoresponsivity monotonically increases with shrinking the spacing distance before the direct tunneling happen, which was significantly enhanced up to 5,000 AW-1 for the bottom contacted device at bias voltage 8 V and wavelength of 410 nm. It is more than 1,700-fold improvement over the previously reported results. Besides the systematically experimental investigation of the dependence of the photoresponsivity on the spacing distance for both the bottom and top contacted MSM photodetectors, a theoretical model has also been developed to well explain the photoresponsivity for these two types of device configurations. Our findings realize shrinking the spacing distance and improving the performance of 2D semiconductor based MSM photodetectors simultaneously, which could pave the way for future high density integration of 2D semiconductor optoelectronics with high performances.
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Submitted 5 August, 2014;
originally announced August 2014.
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Transport and Capacitance properties of Charge Density Wave in few layer 2H-TaS2 Devices
Authors:
Y. F. Cao,
K. M. Cai,
L. J. Li,
W. J. Lu,
Y. P. Sun,
K. Y. Wang
Abstract:
We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the interlayer interaction and inhomogeneous local defects of these micro-devices based on few layer 2H-TaS2 flakes. Semiconductivity rather than metallic property of 2H…
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We carefully investigated the transport and capacitance properties of few layer charge density wave (CDW) 2H-TaS2 devices. The CDW transition temperature and the threshold voltage vary from device to device, which is attributed to the interlayer interaction and inhomogeneous local defects of these micro-devices based on few layer 2H-TaS2 flakes. Semiconductivity rather than metallic property of 2H-TaS2 devices was observed in our experiment at low temperature. The temperature dependence of the relative threshold voltage can be scaled to (1- T / Tr )^0.5+delta with delta=0.08 for the different measured devices with presence of the CDWs. The conductance-voltage and capacity-voltage measurements were performed simultaneously. At very low ac active voltage, we found that the hysteresis loops of these two measurements exactly match each other. Our results point out that the capacity-voltage measurements can also be used to define the threshold depinning voltage of the CDW, which give us a new method to investigate the CDWs.
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Submitted 9 July, 2014;
originally announced July 2014.
