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Ac losses in field-cooled type I superconducting cavities
Authors:
G. Catelani,
K. Li,
C. J. Axline,
T. Brecht,
L. Frunzio,
R. J. Schoelkopf,
L. I. Glazman
Abstract:
As superconductors are cooled below their critical temperature, stray magnetic flux can become trapped in regions that remain normal. The presence of trapped flux facilitates dissipation of ac current in a superconductor, leading to losses in superconducting elements of microwave devices. In type II superconductors, dissipation is well-understood in terms of the dynamics of vortices hosting a sing…
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As superconductors are cooled below their critical temperature, stray magnetic flux can become trapped in regions that remain normal. The presence of trapped flux facilitates dissipation of ac current in a superconductor, leading to losses in superconducting elements of microwave devices. In type II superconductors, dissipation is well-understood in terms of the dynamics of vortices hosting a single flux quantum. In contrast, the ac response of type I superconductors with trapped flux has not received much attention. Building on Andreev's early work [Sov. Phys. JETP 24, 1019 (1967)], here we show theoretically that the dominant dissipation mechanism is the absorption of the ac field at the exposed surfaces of the normal regions, while the deformation of the superconducting/normal interfaces is unimportant. We use the developed theory to estimate the degradation of the quality factors in field-cooled cavities, and we satisfactorily compare these theoretical estimates to the measured field dependence of the quality factors of two aluminum cavities.
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Submitted 6 October, 2021;
originally announced October 2021.
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Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
Authors:
Edward H. Chen,
Kate Raach,
Andrew Pan,
Andrey A. Kiselev,
Edwin Acuna,
Jacob Z. Blumoff,
Teresa Brecht,
Maxwell Choi,
Wonill Ha,
Daniel Hulbert,
Michael P. Jura,
Tyler Keating,
Ramsey Noah,
Bo Sun,
Bryan J. Thomas,
Matthew Borselli,
C. A. C. Jackson,
Matthew T. Rakher,
Richard S. Ross
Abstract:
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniq…
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Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniques, easing the extraction of energy spectra in multiple-dot devices. We use this method to measure dozens of valley excited state energies spanning multiple wafers, quantum dots, and orbital states, crucial for evaluating the dependence of valley splitting on quantum well width and other epitaxial conditions. Our results suggest that narrower wells can be beneficial for improving valley splittings, but this effect can be confounded by variations in growth and fabrication conditions. These results underscore the importance of valley splitting measurements for guiding the development of Si qubits.
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Submitted 26 February, 2021; v1 submitted 9 October, 2020;
originally announced October 2020.
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Micromachined integrated quantum circuit containing a superconducting qubit
Authors:
T. Brecht,
Y. Chu,
C. Axline,
W. Pfaff,
J. Z. Blumoff,
K. Chou,
L. Krayzman,
L. Frunzio,
R. J. Schoelkopf
Abstract:
We present a device demonstrating a lithographically patterned transmon integrated with a micromachined cavity resonator. Our two-cavity, one-qubit device is a multilayer microwave integrated quantum circuit (MMIQC), comprising a basic unit capable of performing circuit-QED (cQED) operations. We describe the qubit-cavity coupling mechanism of a specialized geometry using an electric field picture…
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We present a device demonstrating a lithographically patterned transmon integrated with a micromachined cavity resonator. Our two-cavity, one-qubit device is a multilayer microwave integrated quantum circuit (MMIQC), comprising a basic unit capable of performing circuit-QED (cQED) operations. We describe the qubit-cavity coupling mechanism of a specialized geometry using an electric field picture and a circuit model, and finally obtain specific system parameters using simulations. Fabrication of the MMIQC includes lithography, etching, and metallic bonding of silicon wafers. Superconducting wafer bonding is a critical capability that is demonstrated by a micromachined storage cavity lifetime $34.3~\mathrm{μs}$, corresponding to a quality factor of 2 million at single-photon energies. The transmon coherence times are $T_1=6.4~\mathrm{μs}$, and $T_2^{Echo}= 11.7~\mathrm{μs}$. We measure qubit-cavity dispersive coupling with rate $χ_{qμ}/2π=-1.17~$MHz, constituting a Jaynes-Cummings system with an interaction strength $g/2π=49~$MHz. With these parameters we are able to demonstrate cQED operations in the strong dispersive regime with ease. Finally, we highlight several improvements and anticipated extensions of the technology to complex MMIQCs.
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Submitted 7 November, 2016;
originally announced November 2016.
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Suspending superconducting qubits by silicon micromachining
Authors:
Y. Chu,
C. Axline,
C. Wang,
T. Brecht,
Y. Y. Gao,
L. Frunzio,
R. J. Schoelkopf
Abstract:
We present a method for relieving aluminum 3D transmon qubits from a silicon substrate using micromachining. Our technique is a high yield, one-step deep reactive ion etch that requires no additional fabrication processes, and results in the suspension of the junction area and edges of the aluminum film. The drastic change in the device geometry affects both the dielectric and flux noise environme…
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We present a method for relieving aluminum 3D transmon qubits from a silicon substrate using micromachining. Our technique is a high yield, one-step deep reactive ion etch that requires no additional fabrication processes, and results in the suspension of the junction area and edges of the aluminum film. The drastic change in the device geometry affects both the dielectric and flux noise environment experienced by the qubit. In particular, the participation ratios of various dielectric interfaces are significantly modified, and suspended qubits exhibited longer $T_1$'s than non-suspended ones. We also find that suspension increases the flux noise experienced by tunable SQUID-based qubits.
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Submitted 9 June, 2016;
originally announced June 2016.
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Surface participation and dielectric loss in superconducting qubits
Authors:
Chen Wang,
Christopher Axline,
Yvonne Y. Gao,
Teresa Brecht,
Luigi Frunzio,
Michel H. Devoret,
Robert J. Schoelkopf
Abstract:
We study the energy relaxation times ($T_1$) of superconducting transmon qubits in 3D cavities as a function of dielectric participation ratios of material surfaces. This surface participation ratio, representing the fraction of electric field energy stored in a dissipative surface layer, is computed by a two-step finite-element simulation and experimentally varied by qubit geometry. With a clean…
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We study the energy relaxation times ($T_1$) of superconducting transmon qubits in 3D cavities as a function of dielectric participation ratios of material surfaces. This surface participation ratio, representing the fraction of electric field energy stored in a dissipative surface layer, is computed by a two-step finite-element simulation and experimentally varied by qubit geometry. With a clean electromagnetic environment and suppressed non-equilibrium quasiparticle density, we find an approximately proportional relation between the transmon relaxation rates and surface participation ratios. These results suggest dielectric dissipation arising from material interfaces is the major limiting factor for the $T_1$ of transmons in 3D cQED architecture. Our analysis also supports the notion of spatial discreteness of surface dielectric dissipation.
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Submitted 15 October, 2015; v1 submitted 6 September, 2015;
originally announced September 2015.
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Multilayer microwave integrated quantum circuits for scalable quantum computing
Authors:
T. Brecht,
W. Pfaff,
C. Wang,
Y. Chu,
L. Frunzio,
M. H. Devoret,
R. J. Schoelkopf
Abstract:
As experimental quantum information processing (QIP) rapidly advances, an emerging challenge is to design a scalable architecture that combines various quantum elements into a complex device without compromising their performance. In particular, superconducting quantum circuits have successfully demonstrated many of the requirements for quantum computing, including coherence levels that approach t…
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As experimental quantum information processing (QIP) rapidly advances, an emerging challenge is to design a scalable architecture that combines various quantum elements into a complex device without compromising their performance. In particular, superconducting quantum circuits have successfully demonstrated many of the requirements for quantum computing, including coherence levels that approach the thresholds for scaling. However, it remains challenging to couple a large number of circuit components through controllable channels while suppressing any other interactions. We propose a hardware platform intended to address these challenges, which combines the advantages of integrated circuit fabrication and long coherence times achievable in three-dimensional circuit quantum electrodynamics (3D cQED). This multilayer microwave integrated quantum circuit (MMIQC) platform provides a path toward the realization of increasingly complex superconducting devices in pursuit of a scalable quantum computer.
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Submitted 11 September, 2015; v1 submitted 3 September, 2015;
originally announced September 2015.
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Demonstration of superconducting micromachined cavities
Authors:
T. Brecht,
M. Reagor,
Y. Chu,
W. Pfaff,
C. Wang,
L. Frunzio,
M. H. Devoret,
R. J. Schoelkopf
Abstract:
Superconducting enclosures will be key components of scalable quantum computing devices based on circuit quantum electrodynamics (cQED). Within a densely integrated device, they can protect qubits from noise and serve as quantum memory units. Whether constructed by machining bulk pieces of metal or microfabricating wafers, 3D enclosures are typically assembled from two or more parts. The resulting…
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Superconducting enclosures will be key components of scalable quantum computing devices based on circuit quantum electrodynamics (cQED). Within a densely integrated device, they can protect qubits from noise and serve as quantum memory units. Whether constructed by machining bulk pieces of metal or microfabricating wafers, 3D enclosures are typically assembled from two or more parts. The resulting seams potentially dissipate crossing currents and limit performance. In this Letter, we present measured quality factors of superconducting cavity resonators of several materials, dimensions and seam locations. We observe that superconducting indium can be a low-loss RF conductor and form low-loss seams. Leveraging this, we create a superconducting micromachined resonator with indium that has a quality factor of two million despite a greatly reduced mode volume. Inter-layer coupling to this type of resonator is achieved by an aperture located under a planar transmission line. The described techniques demonstrate a proof-of-principle for multilayer microwave integrated quantum circuits for scalable quantum computing.
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Submitted 11 September, 2015; v1 submitted 3 September, 2015;
originally announced September 2015.
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Measurement and Control of Quasiparticle Dynamics in a Superconducting Qubit
Authors:
Chen Wang,
Yvonne Y. Gao,
Ioan M. Pop,
Uri Vool,
Chris Axline,
Teresa Brecht,
Reinier W. Heeres,
Luigi Frunzio,
Michel H. Devoret,
Gianluigi Catelani,
Leonid I. Glazman,
Robert J. Schoelkopf
Abstract:
Superconducting circuits have attracted growing interest in recent years as a promising candidate for fault-tolerant quantum information processing. Extensive efforts have always been taken to completely shield these circuits from external magnetic field to protect the integrity of superconductivity. Surprisingly, here we show vortices can improve the performance of superconducting qubits by reduc…
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Superconducting circuits have attracted growing interest in recent years as a promising candidate for fault-tolerant quantum information processing. Extensive efforts have always been taken to completely shield these circuits from external magnetic field to protect the integrity of superconductivity. Surprisingly, here we show vortices can improve the performance of superconducting qubits by reducing the lifetimes of detrimental single-electron-like excitations known as quasiparticles. Using a contactless injection technique with unprecedented dynamic range, we quantitatively distinguish between recombination and trapping mechanisms in controlling the dynamics of residual quasiparticles, and show quantized changes in quasiparticle trapping rate due to individual vortices. These results highlight the prominent role of quasiparticle trapping in future development of superconducting qubits, and provide a powerful characterization tool along the way.
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Submitted 24 October, 2014; v1 submitted 27 June, 2014;
originally announced June 2014.
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Non-Poissonian Quantum Jumps of a Fluxonium Qubit due to Quasiparticle Excitations
Authors:
Uri Vool,
Ioan M. Pop,
Katrina Sliwa,
Baleegh Abdo,
Chen Wang,
Teresa Brecht,
Yvonne Y. Gao,
Shyam Shankar,
Michael Hatridge,
Gianluigi Catelani,
Mazyar Mirrahimi,
Luigi Frunzio,
Robert J. Schoelkopf,
Leonid I. Glazman,
Michel H. Devoret
Abstract:
As the energy relaxation time of superconducting qubits steadily improves, non-equilibrium quasiparticle excitations above the superconducting gap emerge as an increasingly relevant limit for qubit coherence. We measure fluctuations in the number of quasiparticle excitations by continuously monitoring the spontaneous quantum jumps between the states of a fluxonium qubit, in conditions where relaxa…
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As the energy relaxation time of superconducting qubits steadily improves, non-equilibrium quasiparticle excitations above the superconducting gap emerge as an increasingly relevant limit for qubit coherence. We measure fluctuations in the number of quasiparticle excitations by continuously monitoring the spontaneous quantum jumps between the states of a fluxonium qubit, in conditions where relaxation is dominated by quasiparticle loss. Resolution on the scale of a single quasiparticle is obtained by performing quantum non-demolition projective measurements within a time interval much shorter than $T_1$, using a quantum limited amplifier (Josephson Parametric Converter). The quantum jumps statistics switches between the expected Poisson distribution and a non-Poissonian one, indicating large relative fluctuations in the quasiparticle population, on time scales varying from seconds to hours. This dynamics can be modified controllably by injecting quasiparticles or by seeding quasiparticle-trapping vortices by cooling down in magnetic field.
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Submitted 9 December, 2014; v1 submitted 6 June, 2014;
originally announced June 2014.
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Reaching 10 ms single photon lifetimes for superconducting aluminum cavities
Authors:
M. Reagor,
Hanhee Paik,
G. Catelani,
L. Sun,
C. Axline,
E. Holland,
I. M. Pop,
N. A. Masluk,
T. Brecht,
L. Frunzio,
M. H. Devoret,
L. I. Glazman,
R. J. Schoelkopf
Abstract:
Three-dimensional microwave cavities have recently been combined with superconducting qubits in the circuit quantum electrodynamics (cQED) architecture. These cavities should have less sensitivity to dielectric and conductor losses at surfaces and interfaces, which currently limit the performance of planar resonators. We expect that significantly (>10^3) higher quality factors and longer lifetimes…
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Three-dimensional microwave cavities have recently been combined with superconducting qubits in the circuit quantum electrodynamics (cQED) architecture. These cavities should have less sensitivity to dielectric and conductor losses at surfaces and interfaces, which currently limit the performance of planar resonators. We expect that significantly (>10^3) higher quality factors and longer lifetimes should be achievable for 3D structures. Motivated by this principle, we have reached internal quality factors greater than 0.5x10^9 and intrinsic lifetimes of 0.01 seconds for multiple aluminum superconducting cavity resonators at single photon energies and millikelvin temperatures. These improvements could enable long lived quantum memories with submicrosecond access times when strongly coupled to superconducting qubits.
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Submitted 22 May, 2013; v1 submitted 18 February, 2013;
originally announced February 2013.
