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Vibrational modes as the origin of dielectric loss at 0.27$\unicode{x2013}$100 THz in a-SiC:H
Authors:
B. T. Buijtendorp,
A. Endo,
W. Jellema,
K. Karatsu,
K. Kouwenhoven,
D. Lamers,
A. J. van der Linden,
K. Rostem,
M. Veen,
E. J. Wollack,
J. J. A. Baselmans,
S. Vollebregt
Abstract:
Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band ($\mathrm{\sim}$0.1$\unicode{x2013}$1 THz) is not understood. We mea…
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Low-loss deposited dielectrics are beneficial for the advancement of superconducting integrated circuits for astronomy. In the microwave band ($\mathrm{\sim}$1$\unicode{x2013}$10 GHz) the cryogenic and low-power dielectric loss is dominated by two-level systems. However, the origin of the loss in the millimeter-submillimeter band ($\mathrm{\sim}$0.1$\unicode{x2013}$1 THz) is not understood. We measured the loss of hydrogenated amorphous SiC (a-SiC:H) films in the 0.27$\unicode{x2013}$100 THz range using superconducting microstrip resonators and Fourier-transform spectroscopy. The agreement between the loss data and a Maxwell-Helmholtz-Drude dispersion model suggests that vibrational modes above 10 THz dominate the loss in the a-SiC:H above 200 GHz.
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Submitted 24 May, 2024; v1 submitted 22 May, 2024;
originally announced May 2024.
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Hydrogenated Amorphous Silicon Carbide: A Low-loss Deposited Dielectric for Microwave to Submillimeter Wave Superconducting Circuits
Authors:
B. T. Buijtendorp,
S. Vollebregt,
K. Karatsu,
D. J. Thoen,
V. Murugesan,
K. Kouwenhoven,
S. Hähnle,
J. J. A. Baselmans,
A. Endo
Abstract:
Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multi-layer structures are most easily fabricated with deposited diele…
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Low-loss deposited dielectrics will benefit superconducting devices such as integrated superconducting spectrometers, superconducting qubits and kinetic inductance parametric amplifiers. Compared with planar structures, multi-layer structures such as microstrips are more compact and eliminate radiation loss at high frequencies. Multi-layer structures are most easily fabricated with deposited dielectrics, which typically exhibit higher dielectric loss than crystalline dielectrics. We measured the sub-kelvin and low-power microwave and mm-submm wave dielectric loss of hydrogenated amorphous silicon carbide (a-SiC:H), using a superconducting chip with NbTiN/a-SiC:H/NbTiN microstrip resonators. We deposited the a-SiC:H by plasma-enhanced chemical vapor deposition at a substrate temperature of 400°C. The a-SiC:H has a mm-submm loss tangent ranging from $0.80 \pm 0.01 \times 10^{-4}$ to $1.43 \pm 0.04 \times 10^{-4}$ in the range of 270 to 385 GHz. The microwave loss tangent is $3.2 \pm 0.2 \times 10^{-5}$. These are the lowest low-power sub-kelvin loss tangents that have been reported for microstrip resonators at mm-submm and microwave frequencies. We observe that the loss tangent increases with frequency. The a-SiC:H films are free of blisters and have low stress: $-$20 MPa compressive at 200 nm thickness to 60 MPa tensile at 1000 nm thickness.
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Submitted 7 October, 2021;
originally announced October 2021.
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Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators
Authors:
Bruno T. Buijtendorp,
Juan Bueno,
David J. Thoen,
Vignesh Murugesan,
Paolo M. Sberna,
Jochem J. A. Baselmans,
Sten Vollebregt,
Akira Endo
Abstract:
Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disor…
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Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below $10^{-5}$ for a resonator energy of $10^5$ photons, at 120 mK and 4-7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters.
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Submitted 14 December, 2020;
originally announced December 2020.
