Showing 1–50 of 70 results for author: Rault, J

Two-dimensional to bulk crossover of the WSe$_2$ electronic band structure

Authors: Patrick Le Fèvre, Raphaël Salazar, Matthieu Jamet, François Bertran, Chiara Bigi, Abdelkarim Ourghi, Céline Vergnaud, Aki Pulkkinen, Jan Minar, Thomas Jaouen, Julien Rault

Abstract: Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit. Using angle-resolved photoemission spect… ▽ More Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction) due to the hybridization of out-of-plane orbitals but no kz-dispersion is expected at the single-layer limit. Using angle-resolved photoemission spectroscopy, we precisely address the two-dimensional to three-dimensional crossover of the electronic band structure of epitaxial WSe$_2$ thin films. Increasing number of discrete electronic states appears in given kz-ranges while increasing the number of layers. The continuous bulk dispersion is nearly retrieved for 6-sheet films. These results are reproduced by calculations going from a relatively simple tight-binding model to a sophisticated KKR-Green's function calculation. This two-dimensional system is hence used as a benchmark to compare different theoretical approaches. △ Less

Submitted 4 July, 2024; originally announced July 2024.

Electronic bandstructure of superconducting KTaO3 (111) interfaces

Authors: Srijani Mallik, Börge Göbel, Hugo Witt, Luis M. Vicente-Arche, Sara Varotto, Julien Bréhin, Gerbold Ménard, Guilhem Saïz, Dyhia Tamsaout, Andrés Felipe Santander-Syro, Franck Fortuna, François Bertran, Patrick Le Fèvre, Julien Rault, Isabella Boventer, Ingrid Mertig, Agnès Barthélémy, Nicolas Bergeal, Annika Johansson, Manuel Bibes

Abstract: Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orient… ▽ More Two-dimensional electron gases(2DEGs)based on KTaO3 are emerging as a promising platform for spin-orbitronics due to their high Rashba spin-orbit coupling (SOC) and gate-voltage tunability. The recent discovery of a superconducting state in KTaO3 2DEGs now expands their potential towards topological superconductivity. Although the band structure of KTaO3 surfaces of various crystallographic orientations has already been mapped using angle-resolved photoemission spectroscopy(ARPES), this is not the case for superconducting KTaO3 2DEGs. Here, we reveal the electronic structure of superconducting 2DEGs based on KTaO3 (111) single crystals through ARPES measurements. We fit the data with a tight-binding model and compute the associated spin textures to bring insight into the SOC-driven physics of this fascinating system. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Comments: 9 pages, 4 figures

Visualizing giant ferroelectric gating effects in large-scale WSe$_2$/BiFeO$_3$ heterostructures

Authors: Raphaël Salazar, Sara Varotto, Céline Vergnaud, Vincent Garcia, Stéphane Fusil, Julien Chaste, Thomas Maroutian, Alain Marty, Frédéric Bonell, Debora Pierucci, Abdelkarim Ouerghi, François Bertran, Patrick Le Fèvre, Matthieu Jamet, Manuel Bibes, Julien Rault

Abstract: Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonst… ▽ More Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferroic oxide, and WSe$_2$, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe$_2$ is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO$_3$ films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe$_2$ and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO$_3$. Such a strong shift opens new perspectives in the efficient manipulation of TMDs properties by proximity effects. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Direct visualization of Rashba-split bands and spin/orbital-charge interconversion at KTaO$_3$ interfaces

Authors: Sara Varotto, Annika Johansson, Börge Göbel, Luis M. Vicente-Arche, Srijani Mallik, Julien Bréhin, Raphaël Salazar, François Bertran, Patrick Le Fèvre, Nicolas Bergeal, Julien Rault, Ingrid Mertig, Manuel Bibes

Abstract: Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advan… ▽ More Rashba interfaces have emerged as promising platforms for spin-charge interconversion through the direct and inverse Edelstein effects. Notably, oxide-based two-dimensional electron gases (2DEGs) display a large and gate-tunable conversion efficiency, as determined by transport measurements. However, a direct visualization of the Rashba-split bands in oxide 2DEGs is lacking, which hampers an advanced understanding of their rich spin-orbit physics. Here, we investigate KTaO$_3$-2DEGs and evidence their Rashba-split bands using angle resolved photoemission spectroscopy. Fitting the bands with a tight-binding Hamiltonian, we extract the effective Rashba coefficient and bring insight into the complex multiorbital nature of the band structure. Our calculations reveal unconventional spin and orbital textures, showing compensation effects from quasi-degenerate band pairs which strongly depend on in-plane anisotropy. We compute the band-resolved spin and orbital Edelstein effects, and predict interconversion efficiencies exceeding those of other oxide 2DEGs. Finally, we suggest design rules for Rashba systems to optimize spin-charge interconversion performance. △ Less

Submitted 18 July, 2022; originally announced July 2022.

Rashba-like spin textures in Graphene promoted by ferromagnet-mediated Electronic-Hybridization with heavy metal

Authors: Beatriz Muñiz Cano, Adrían Gudín, Jaime Sánchez-Barriga, Oliver J. Clark, Alberto Anadón, Jose Manuel Díez, Pablo Olleros-Rodríguez, Fernando Ajejas, Iciar Arnay, Matteo Jugovac, Julien Rault, Patrick Le Févre, François Bertran, Donya Mazhjoo, Gustav Bihlmayer, Stefan Blügel, Rodolfo Miranda, Julio Camarero, Miguel Angel Valbuena, Paolo Perna

Abstract: Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this g… ▽ More Epitaxial graphene/ferromagnetic metal (Gr/FM) heterostructures deposited onto heavy metals (HM) have been proposed for the realization of novel spintronic devices because of their perpendicular magnetic anisotropy and sizeable Dzyaloshinskii-Moriya interaction (DMI), allowing for both enhanced thermal stability and stabilization of chiral spin textures. However, establishing routes towards this goal requires the fundamental understanding of the microscopic origin of their unusual properties. Here, we elucidate the nature of the induced spin-orbit coupling (SOC) at Gr/Co interfaces on Ir. Through spin- and angle-resolved photoemission along with density functional theory, we show that the interaction of the HM with the C atomic layer via hybridization with the FM is the source of strong SOC in the Gr layer. Furthermore, our studies on ultrathin Co films underneath Gr reveal an energy splitting of $\sim$\,100 meV (negligible) for in-plane (out-of-plane) spin polarized Gr $π$ bands, consistent with a Rashba-SOC at the Gr/Co interface, which is either the fingerprint or the origin of the DMI. This mechanism vanishes at large Co thicknesses, where neither in-plane nor out-of-plane spin-orbit splitting is observed, indicating that Gr $π$ states are electronically decoupled from the HM. The present findings are important for future applications of Gr-based heterostructures in spintronic devices. △ Less

Submitted 1 May, 2023; v1 submitted 9 June, 2022; originally announced June 2022.

Comments: 11 pages, 7 figures

Emergent phenomena at oxide interfaces studied with standing-wave photoelectron spectroscopy

Authors: C. -T. Kuo, G. Conti, J. E. Rault, C. M. Schneider, S. Nemšák, A. X. Gray

Abstract: Emergent phenomena at complex-oxide interfaces have become a vibrant field of study in the past two decades due to the rich physics and a wide range of possibilities for creating new states of matter and novel functionalities for potential devices. Electronic-structural characterization of such phenomena presents a unique challenge due to the lack of direct yet non-destructive techniques for probi… ▽ More Emergent phenomena at complex-oxide interfaces have become a vibrant field of study in the past two decades due to the rich physics and a wide range of possibilities for creating new states of matter and novel functionalities for potential devices. Electronic-structural characterization of such phenomena presents a unique challenge due to the lack of direct yet non-destructive techniques for probing buried layers and interfaces with the required Angstrom-level resolution, as well as element and orbital specificity. In this review article, we survey several recent studies wherein soft x-ray standing-wave photoelectron spectroscopy, a relatively newly developed technique, is used to investigate buried oxide interfaces exhibiting emergent phenomena such as metal-insulator transition, interfacial ferromagnetism, and two-dimensional electron gas. Advantages, challenges, and future applications of this methodology are also discussed. △ Less

Submitted 27 October, 2021; originally announced October 2021.

Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases

Authors: Luis M. Vicente-Arche, Julien Bréhin, Sara Varotto, Maxen Cosset-Cheneau, Srijani Mallik, Raphaël Salazar, Paul Noël, Diogo Castro Vaz, Felix Trier, Suvam Bhattacharya, Anke Sander, Patrick Le Fèvre, François Bertran, Guilhem Saiz, Gerbold Ménard, Nicolas Bergeal, Agnès Barthélémy, Hai Li, Chia-Ching Lin, Dmitri E. Nikonov, Ian A. Young, Julien Rault, Laurent Vila, Jean-Philippe Attané, Manuel Bibes

Abstract: Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE an… ▽ More Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO$_3$ (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, we report the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO$_3$. We generate 2DEGs by the simple deposition of Al metal onto KTaO$_3$ single crystals, characterize them by angle-resolved photoemission spectroscopy and magnetotransport, and demonstrate the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. We compare the spin-charge interconversion efficiency with that of STO-based interfaces, relate it to the 2DEG electronic structure, and give perspectives for the implementation of KTaO$_3$ 2DEGs into spin-orbitronic devices. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Journal ref: Adv. Mater. 202102102 (2021)

High resolution depth profiling using near-total-reflection hard X-ray photoelectron spectroscopy

Authors: Julien E. Rault, Cheng-Tai Kuo, Henrique P. Martins, Giuseppina Conti, Slavomir Nemšák

Abstract: By adjusting the incidence angle of incoming X-ray near the critical angle of X-ray total reflection, the photoelectron intensity is strongly modulated due to the variation of X-ray penetration depth. Photoelectron spectroscopy (PES) combining with near total reflection (NTR) exhibit tunable surface sensitivity, providing depth-resolved information. In this review article, we first describe the ex… ▽ More By adjusting the incidence angle of incoming X-ray near the critical angle of X-ray total reflection, the photoelectron intensity is strongly modulated due to the variation of X-ray penetration depth. Photoelectron spectroscopy (PES) combining with near total reflection (NTR) exhibit tunable surface sensitivity, providing depth-resolved information. In this review article, we first describe the experimental setup and specific data analysis process. We then review three different examples which show the broad application of this method. The emphasis is on its applications to correlated oxide heterostructures, especially quantitative depth analyses of compositions and electronic states. In a last part, we discussed the limitations of this technique, mostly in terms of range of samples which can be studied. △ Less

Submitted 17 September, 2021; v1 submitted 14 July, 2021; originally announced July 2021.

Comments: 28 pages, 5 figures, review paper on NTR HAXPES

Journal ref: Journal of Vacuum Science & Technology A 39, 060802 (2021)

Coexistence of ferromagnetism and spin-orbit coupling by incorporation of platinum in two-dimensional VSe$_2$

Authors: E. Vélez-Fort, A. Hallal, R. Sant, T. Guillet, K. Abdukayumov, A. Marty, C. Vergnaud, J. -F. Jacquot, D. Jalabert, J. Fujii, I. Vobornik, J. Rault, N. B. Brookes, D. Longo, P. Ohresser, A. Ouerghi, J. -Y. Veuillen, P. Mallet, H. Boukari, H. Okuno, M. Chshiev, F. Bonell, M. Jamet

Abstract: We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homo… ▽ More We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homogeneous 2D alloy restores ferromagnetic order with Curie temperatures of 6 K for 5 monolayers and 25 K for one monolayer of V$_{0.65}$Pt$_{0.35}$Se$_2$. Moreover, the presence of platinum atoms gives rise to Rashba spin-orbit coupling in (V,Pt)Se$_2$ providing an original platform to study the interplay between ferromagnetism and spin-orbit coupling in the 2D limit. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Comments: 5 pages, 5 figures

Experimental observation and spin texture of Dirac node arcs in tetradymite topological metals

Authors: J. Dai, E. Frantzeskakis, N. Aryal, K. -W. Chen, F. Fortuna, J. E. Rault, P. Le Fèvre, L. Balicas, K. Miyamoto, T. Okuda, E. Manousakis, R. E. Baumbach, A. F. Santander-Syro

Abstract: We report the observation of a non-trivial spin texture in Dirac node arcs, novel topological objects formed when Dirac cones of massless particles extend along an open one-dimensional line in momentum space. We find that such states are present in all the compounds of the tetradymite M$_2$Te$_2$X family (M$=$Ti, Zr or Hf and X$=$P or As), regardless of the weak or strong character of the topologi… ▽ More We report the observation of a non-trivial spin texture in Dirac node arcs, novel topological objects formed when Dirac cones of massless particles extend along an open one-dimensional line in momentum space. We find that such states are present in all the compounds of the tetradymite M$_2$Te$_2$X family (M$=$Ti, Zr or Hf and X$=$P or As), regardless of the weak or strong character of the topological invariant. The Dirac node arcs in tetradymites are thus the simplest possible, textbook example, of a type-I Dirac system with a single spin-polarized node arc. △ Less

Submitted 16 May, 2021; originally announced May 2021.

Comments: Main Text + Supplementary Information, 12 pages, 11 figures

Journal ref: Phys. Rev. Lett. 126, 196407 (2021)

Origin of the different electronic structure of Rh- and Ru-doped Sr2IrO4

Authors: Véronique Brouet, Paul Foulquier, Alex Louat, François Bertran, Patrick Le Fèvre, Julien E. Rault, Dorothée Colson

Abstract: One way to induce insulator to metal transitions in the spin-orbit Mott insulator Sr2IrO4 is to substitute iridium with transition metals (Ru, Rh). However, this creates intriguing inhomogeneous metallic states, which cannot be described by a simple doping effect. We detail the electronic structure of the Ru-doped case with angle-resolved photoemission and show that, contrary to Rh, it cannot be c… ▽ More One way to induce insulator to metal transitions in the spin-orbit Mott insulator Sr2IrO4 is to substitute iridium with transition metals (Ru, Rh). However, this creates intriguing inhomogeneous metallic states, which cannot be described by a simple doping effect. We detail the electronic structure of the Ru-doped case with angle-resolved photoemission and show that, contrary to Rh, it cannot be connected to the undoped case by a rigid shift. We further identify bands below $E_F$ coexisting with the metallic ones that we assign to non-bonding Ir sites. We rationalize the differences between Rh and Ru by a different hybridization with oxygen, which mediates the coupling to Ir and sensitively affects the effective doping. We argue that the spin-orbit coupling does not control neither the charge transfer nor the transition threshold. △ Less

Submitted 4 March, 2021; originally announced March 2021.

Journal ref: Phys. Rev. B 104, 121104 (2021)

Near-Field Millimeter Wave Vector Measurements -- Experimental Design & Measurement Interpretation

Authors: Laurent Chusseau, Thibaut Auriac, Jérémy Raoult

Abstract: Near-field imaging experiments exist both in optics and microwaves with often different methods and theoretical supports. For millimeter waves or THz waves, techniques from both fields can be merged to identify materials at the micron scale on the surface or in near-surface volumes. The principle of such near-field vector imaging at the frequency of 60 GHz is discussed in detail here. We develop t… ▽ More Near-field imaging experiments exist both in optics and microwaves with often different methods and theoretical supports. For millimeter waves or THz waves, techniques from both fields can be merged to identify materials at the micron scale on the surface or in near-surface volumes. The principle of such near-field vector imaging at the frequency of 60 GHz is discussed in detail here. We develop techniques for extracting vector voltages and methods for extracting the normalized near-field vector reflection on the sample. In particular, the subharmonic IQ mixer imbalance, which produced corrupted outputs either due to amplitude or phase differences, must be taken into account and compensated for to avoid any systematic errors. We provide a method to fully characterize these imperfections and to isolate the only contribution of the near-field interaction between the probe and the sample. The effects of the mechanical modulation waveform and harmonic rank used for signal acquisition are also discussed. △ Less

Submitted 27 January, 2021; originally announced January 2021.

Comments: 8 pages, 11 figures, submitted to IEEE Transactions on Intrumentation Meas

Photoemission signature of momentum-dependent hybridization in CeCoIn$_5$

Authors: R. Kurleto, M. Fidrysiak, L. Nicolaï, J. Minár, M. Rosmus, Ł. Walczak, A. Tejeda, J. E. Rault, F. Bertran, A. P. Kądzielawa, D. Legut, D. Gnida, D. Kaczorowski, K. Kissner, F. Reinert, J. Spałek, P. Starowicz

Abstract: Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-… ▽ More Hybridization between $f$ electrons and conduction bands ($c$-$f$ hybridization) is a driving force for many unusual phenomena. To provide insight into it, systematic studies of CeCoIn$_5$ heavy fermion superconductor have been performed by angle-resolved photoemission spectroscopy (ARPES) in a large angular range at temperature of $T=6$ K. The used photon energy of 122 eV corresponds to Ce $4d$-$4f$ resonance. Calculations carried out with relativistic multiple scattering Korringa-Kohn-Rostoker method and one-step model of photoemission yielded realistic simulation of the ARPES spectra indicating that Ce-In surface termination prevails. Surface states, which have been identified in the calculations, contribute significantly to the spectra. Effects of the hybridization strongly depend on wave vector. They include a dispersion of heavy electrons and bands gaining $f$-electron character when approaching Fermi energy. We have also observed a considerable variation of $f$-electron spectral weight at $E_F$, which is normally determined by both matrix element effects and wave vector dependent $c$-$f$ hybridization. Fermi surface scans covering a few Brillouin zones revealed large matrix element effects. A symmetrization of experimental Fermi surface, which reduces matrix element contribution, yielded a specific variation of $4f$-electron enhanced spectral intensity at $E_F$ around $\barΓ$ and $\bar{M}$ points. Tight-binding approximation calculations for Ce-In plane provided the same universal distribution of $4f$-electron density for a range of values of the parameters used in the model. △ Less

Submitted 4 September, 2021; v1 submitted 14 January, 2021; originally announced January 2021.

Comments: 15 pages, 9 figures

Journal ref: Phys. Rev. B 104, 125104 (2021)

FRIPON: A worldwide network to track incoming meteoroids

Authors: F. Colas, B. Zanda, S. Bouley, S. Jeanne, A. Malgoyre, M. Birlan, C. Blanpain, J. Gattacceca, L. Jorda, J. Lecubin, C. Marmo, J. L. Rault, J. Vaubaillon, P. Vernazza, C. Yohia, D. Gardiol, A. Nedelcu plus 300 co-authors

Abstract: Context: Until recently, camera networks designed for monitoring fireballs worldwide were not fully automated, implying that in case of a meteorite fall, the recovery campaign was rarely immediate. This was an important limiting factor as the most fragile - hence precious - meteorites must be recovered rapidly to avoid their alteration. Aims: The Fireball Recovery and InterPlanetary Observation Ne… ▽ More Context: Until recently, camera networks designed for monitoring fireballs worldwide were not fully automated, implying that in case of a meteorite fall, the recovery campaign was rarely immediate. This was an important limiting factor as the most fragile - hence precious - meteorites must be recovered rapidly to avoid their alteration. Aims: The Fireball Recovery and InterPlanetary Observation Network (FRIPON) scientific project was designed to overcome this limitation. This network comprises a fully automated camera and radio network deployed over a significant fraction of western Europe and a small fraction of Canada. As of today, it consists of 150 cameras and 25 European radio receivers and covers an area of about 1.5 million square kilometers. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Comments: 54 pages, 14 figures

Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide

Authors: G. Kremer, J. C. Alvarez-Quiceno, T. Pierron, C. González, M. Sicot, B. Kierren, L. Moreau, J. E. Rault, P. Le Fèvre, F. Bertran, Y. J. Dappe, J. Coraux, P. Pochet, Y. Fagot-Revurat

Abstract: Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscop… ▽ More Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscopy and rationalise with the help of density functional theory calculations. We discover dispersing bands related to electronic delocalisation within the top and bottom planes of the material, with two linear crossings reminiscent of those predicted in bilayer AA-stacked graphene, and semi-flat bands stemming from the chemical bridges between the two planes. This band structure is robust against exposure to air, and can be controled by exposure to oxygen. We provide an experimental lower-estimate of the band gap size of 5 eV and predict a full gap of 7.36 eV using density functional theory calculations. △ Less

Submitted 6 May, 2021; v1 submitted 29 November, 2020; originally announced November 2020.

Journal ref: 2D Mater. 8 (2021) 035021

Photoemission study on pristine and Ni-doped SrTiO$_{3}$ thin films

Authors: F. Alarab, K. Hricovini, B. Leikert, L. Nicolai, M. Fanciulli, O. Heckmann, M. Richter, L. Prušakova, Z. Jansa, P. Šutta, J. Rault, P. Lefevre, M. Muntwiller, R. Claessen, J. Minár

Abstract: We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high… ▽ More We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Khon-Rostoker Greens's function method, predicted the formation of localised $3d$-impurity bands in the band gap of SrTiO$_{3}$ close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion confirm these findings. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Comments: 12 pages and 7 figures

Electron-polaron dichotomy of charge carriers in perovskite oxides

Authors: Marius-Adrian Husanu, Lorenzo Vistoli, Carla Verdi, Anke Sander, Vincent Garcia, Julien Rault, Federico Bisti, Leonid L. Lev, Thorsten Schmitt, Feliciano Giustino, Andrey S. Mishchenko, Manuel Bibes, Vladimir N. Strocov

Abstract: Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here,… ▽ More Many transition metal oxides (TMOs) are Mott insulators due to strong Coulomb repulsion between electrons, and exhibit metal-insulator transitions (MITs) whose mechanisms are not always fully understood. Unlike most TMOs, minute doping in CaMnO3 induces a metallic state without any structural transformations. This material is thus an ideal platform to explore band formation through the MIT. Here, we use angle-resolved photoemission spectroscopy to visualize how electrons delocalize and couple to phonons in CaMnO3. We show the development of a Fermi surface where mobile electrons coexist with heavier carriers, strongly coupled polarons. The latter originate from a boost of the electron-phonon interaction (EPI). This finding brings to light the role that the EPI can play in MITs even caused by purely electronic mechanisms. Our discovery of the EPI-induced dichotomy of the charge carriers explains the transport response of Ce-doped CaMnO3 and suggests strategies to engineer quantum matter from TMOs. △ Less

Submitted 15 April, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

Comments: Accepted manuscript to Communications Physics 3, 62 (2020)

Journal ref: Communications Physics 3, 62 (2020)

Tunable two-dimensional electron system at the (110) surface of SnO$_2$

Authors: J. Dai, E. Frantzeskakis, F. Fortuna, P. Lömker, R. Yukawa, M. Thees, S. Sengupta, P. Le Fèvre, F. Bertran, J. E. Rault, K. Horiba, M. Müller, H. Kumigashira, A. F. Santander-Syro

Abstract: We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalyt… ▽ More We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalytic properties SnO$_2$. Our data show that surface oxygen vacancies are at the origin of such 2DES, providing key information about the long-debated origin of $n$-type conductivity in SnO$_2$, at the basis of a wide range of applications. Furthermore, our study shows that the emergence of a 2DES in a given oxide depends on a delicate interplay between its crystal structure and the orbital character of its conduction band. △ Less

Submitted 16 February, 2020; originally announced February 2020.

Comments: 11 pages, 12 figures

Journal ref: Physical Review B 101, 085121 (2020)

Electronic reconstruction forming a $C_2$-symmetric Dirac semimetal in Ca$_3$Ru$_2$O$_7$

Authors: M. Horio, Q. Wang, V. Granata, K. P. Kramer, Y. Sassa, S. Jöhr, D. Sutter, A. Bold, L. Das, Y. Xu, R. Frison, R. Fittipaldi, T. K. Kim, C. Cacho, J. E. Rault, P. Le Fèvre, F. Bertran, N. C. Plumb, M. Shi, A. Vecchione, M. H. Fischer, J. Chang

Abstract: Electronic band structures in solids stem from a periodic potential reflecting the structure of either the crystal lattice or an electronic order. In the stoichiometric ruthenate Ca$_3$Ru$_2$O$_7$, numerous Fermi surface sensitive probes indicate a low-temperature electronic reconstruction. Yet, the causality and the reconstructed band structure remain unsolved. Here, we show by angle-resolved pho… ▽ More Electronic band structures in solids stem from a periodic potential reflecting the structure of either the crystal lattice or an electronic order. In the stoichiometric ruthenate Ca$_3$Ru$_2$O$_7$, numerous Fermi surface sensitive probes indicate a low-temperature electronic reconstruction. Yet, the causality and the reconstructed band structure remain unsolved. Here, we show by angle-resolved photoemission spectroscopy, how in Ca$_3$Ru$_2$O$_7$ a $C_2$-symmetric massive Dirac semimetal is realized through a Brillouin-zone preserving electronic reconstruction. This Dirac semimetal emerges in a two-stage transition upon cooling. The Dirac point and band velocities are consistent with constraints set by quantum oscillation, thermodynamic, and transport experiments, suggesting that the complete Fermi surface is resolved. The reconstructed structure -- incompatible with translational-symmetry-breaking density waves -- serves as an important test for band structure calculations of correlated electron systems. △ Less

Submitted 19 March, 2021; v1 submitted 27 November, 2019; originally announced November 2019.

Journal ref: npj Quantum Mater. 6, 29 (2021)

A Case Study of the May 30th, 2017 Italian Fireball

Authors: A. Carbognani, D. Barghini, D. Gardiol, M. di Martino, G. B. Valsecchi, P. Trivero, A. Buzzoni, S. Rasetti, D. Selvestrel, C. Knapic, E. Londero, S. Zorba, C. A. Volpicelli, M. Di Carlo, J. Vaubaillon, C. Marmo, F. Colas, D. Valeri, F. Zanotti, M. Morini, P. Demaria, B. Zanda, S. Bouley, P. Vernazza, J. Gattacceca , et al. (3 additional authors not shown)

Abstract: On May 30th, 2017 at about 21h 09m 17s UTC a green bright fireball crossed the sky of north-eastern Italy. The fireball path was observed from some all-sky cameras starting from a mean altitude of $81.1 \pm 0.2$ km (Lat. $44.369^{\circ} \pm 0.002^{\circ}$ N; Long. $11.859^{\circ} \pm 0.002^{\circ}$ E) and extinct at $23.3 \pm 0.2$ km (Lat. $45.246^{\circ} \pm 0.002^{\circ}$ N; Long.… ▽ More On May 30th, 2017 at about 21h 09m 17s UTC a green bright fireball crossed the sky of north-eastern Italy. The fireball path was observed from some all-sky cameras starting from a mean altitude of $81.1 \pm 0.2$ km (Lat. $44.369^{\circ} \pm 0.002^{\circ}$ N; Long. $11.859^{\circ} \pm 0.002^{\circ}$ E) and extinct at $23.3 \pm 0.2$ km (Lat. $45.246^{\circ} \pm 0.002^{\circ}$ N; Long. $12.046^{\circ} \pm 0.002^{\circ}$ E), between the Italian cities of Venice and Padua. In this paper, on the basis of simple physical models, we will compute the atmospheric trajectory, analize the meteoroid atmospheric dynamics, the dark flight phase (with the strewn field) and compute the best heliocentric orbit of the progenitor body. Search for meteorites on the ground has not produced any results so far. △ Less

Submitted 2 February, 2020; v1 submitted 21 November, 2019; originally announced November 2019.

Comments: 19 pages, 17 figures. Accepted for publication in The European Physical Journal PLUS

A little tour across the wonderful realm of meteor radiometry

Authors: Jean-Louis Rault, François Colas

Abstract: This paper describes the path strewn with pitfalls encountered during the development of a large dynamic range and very fast radiometer designed to precisely observe the meteor light curves. A small series production of a finalized version of the current prototype should accompany some video cameras from the FRIPON network. This paper describes the path strewn with pitfalls encountered during the development of a large dynamic range and very fast radiometer designed to precisely observe the meteor light curves. A small series production of a finalized version of the current prototype should accompany some video cameras from the FRIPON network. △ Less

Submitted 8 November, 2019; originally announced November 2019.

Comments: To be published in the Proceedings of the International Meteor Conference, Bollmannsruh, Germany,3 to 6 October 2019

ARPES study of orbital characters, symmetry breakings and pseudogaps in doped and pure Sr2IrO4

Authors: Alex Louat, Benjamin Lenz, Silke Biermann, Cyril Martins, François Bertran, Patrick Le Fèvre, Julien E. Rault, Fabrice Bert, Véronique Brouet

Abstract: Sr2IrO4 is characterized by a large spin-orbit coupling, which gives rise to bands with strongly entangled spin and orbital characters, called J=1/2 and J=3/2. We use light-polarization dependent ARPES to study directly the orbital character of these bands and fully map out their dispersion. We observe bands in very good agreement with our cluster dynamical mean-field theory calculations. We show… ▽ More Sr2IrO4 is characterized by a large spin-orbit coupling, which gives rise to bands with strongly entangled spin and orbital characters, called J=1/2 and J=3/2. We use light-polarization dependent ARPES to study directly the orbital character of these bands and fully map out their dispersion. We observe bands in very good agreement with our cluster dynamical mean-field theory calculations. We show that the J=1/2 band, the closest to the Fermi level Ef, is dominated by dxz character along kx and dyz along ky. This is actually in agreement with an isotropic J=1/2 character on average, but this large orbital dependence in k-space was mostly overlooked before. It gives rise to strong modulations of the ARPES intensity that we explain and carefully take into account to compare dispersions in equivalent directions of the Brillouin zone. Although the latter dispersions look different at first, suggesting possible symmetry breakings, they are found essentially similar, once corrected for these intensity variations. In particular, the pseudogap-like features close to the $X$ point appearing in the nearly metallic 15% Rh-doped Sr2IrO4 strongly depend on experimental conditions. We reveal that there is nevertheless an energy scale of 30meV below which spectral weight is suppressed, independent of the experimental conditions, which gives a reliable basis to analyze this behavior. We suggest it is caused by disorder. △ Less

Submitted 2 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. B 100, 205135 (2019)

Ultra-low magnetic damping in Co 2 Mn-based Heusler compounds: promising materials for spintronic

Authors: C Guillemard, S. Petit-Watelot, L. Pasquier, D. Pierre, J. Ghanbaja, J-C Rojas-Sánchez, A. Bataille, J. Rault, P Le Fèvre, F. Bertran, Stephane Andrieu

Abstract: The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements in high crystalline quality films (Co 2 MnZ with Z=Si, Ge, Sn, Al, Ga, Sb), electronic properties such as the minority spin band gap, Fermi energy position in th… ▽ More The prediction of ultra-low magnetic damping in Co 2 MnZ Heusler half-metal thin-film magnets is explored in this study and the damping response is shown to be linked to the underlying electronic properties. By substituting the Z elements in high crystalline quality films (Co 2 MnZ with Z=Si, Ge, Sn, Al, Ga, Sb), electronic properties such as the minority spin band gap, Fermi energy position in the gap and spin polarization can be tuned and the consequence on magnetization dynamics analyzed. The experimental results allow us to directly explore the interplay of spin polarization, spin gap, Fermi energy position and the magnetic damping obtained in these films, together with ab initio calculation predictions. The ultra-low magnetic damping coefficients measured in the range 4.1 10-4-9 10-4 for Co 2 MnSi, Ge, Sn, Sb are the lowest values obtained on a conductive layer and offers a clear experimental demonstration of theoretical predictions on Half-Metal Magnetic Heusler compounds and a pathway for future materials design. △ Less

Submitted 22 May, 2019; originally announced May 2019.

Journal ref: Physical Review Applied, American Physical Society, In press

Hard x-ray standing-wave photoemission insights into the structure of an epitaxial Fe/MgO multilayer magnetic tunnel junction

Authors: C. S. Conlon, G. Conti, S. Nemšák, G. Palsson, R. Moubah, C. -T. Kuo, M. Gehlmann, J. Ciston, J. Rault, J. -P. Rueff, F. Salmassi, W. Stolte, A. Rattanachata, S. -C. Lin, A. Keqi, A. Saw, B. Hjörvarsson, C. S. Fadley

Abstract: The Fe/MgO magnetic tunnel junction is a classic spintronic system, with current importance technologically, and interest for future innovation. The key magnetic properties are linked directly to the structure of hard-to-access buried interfaces, and the Fe and MgO components near the surface are unstable when exposed to air, making a deeper probing, non-destructive, in-situ measurement ideal for… ▽ More The Fe/MgO magnetic tunnel junction is a classic spintronic system, with current importance technologically, and interest for future innovation. The key magnetic properties are linked directly to the structure of hard-to-access buried interfaces, and the Fe and MgO components near the surface are unstable when exposed to air, making a deeper probing, non-destructive, in-situ measurement ideal for this system. We have thus applied hard x-ray photoemission spectroscopy (HXPS) and standing-wave (SW) HXPS in the few keV energy range to probe the structure of an epitaxially-grown MgO/Fe superlattice. The superlattice consists of 9 repeats of MgO grown on Fe by magnetron sputtering on an MgO (001) substrate, with a protective Al2O3 capping layer. We determine through SW-HXPS that 8 of the 9 repeats are similar and ordered, with a period of 33 $\pm$ 4 angstrom, with minor presence of FeO at the interfaces and a significantly distorted top bilayer with ca. 3 times the oxidation of the lower layers at the top MgO/Fe interface. There is evidence of asymmetrical oxidation on the top and bottom of the Fe layers. We find agreement with dark-field scanning transmission electron microscope (STEM) and x-ray reflectivity measurements. Through the STEM measurements we confirm an overall epitaxial stack with dislocations and warping at the interfaces of ca. 5 angstrom. We also note a distinct difference in the top bilayer, especially MgO, with possible Fe inclusions. We thus demonstrate that SW-HXPS can be used to probe deep buried interfaces of novel magnetic devices with few angstrom precision. △ Less

Submitted 25 June, 2019; v1 submitted 10 April, 2019; originally announced April 2019.

Comments: 37 pages, 13 figures

Temperature-driven modification of surface electronic structure on bismuth, a topological border material

Authors: Y. Ohtsubo, Y. Yamashita, J. Kishi, S. Ideta, K. Tanaka, H. Yamane, J. E. Rault, P. Le Fèvre, F. Bertran, S. Kimura

Abstract: Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy (ARPES). At low temperature, the upper branch of the surface state merged to the projected bulk conduction bands around the… ▽ More Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy (ARPES). At low temperature, the upper branch of the surface state merged to the projected bulk conduction bands around the $\bar{M}$ point of the surface Brillouin zone (SBZ). In contrast, the same branch merged to the projected bulk valence bands at high temperature (400 K). Such behavior could be interpreted as a topological phase transition driven by the temperature, which might be applicable for future spin-thermoelectric devices. We discuss the possible mechanisms to cause such transition, such as the thermal lattice distortion and electron-phonon coupling. △ Less

Submitted 17 February, 2019; originally announced February 2019.

Comments: 15 pages with 6 figures (single column)

Journal ref: Journal of Physics D: Applied Physics 52 254002 (2019)

Atomically precise step grids for the engineering of helical states

Authors: J. Enrique Ortega, Guillaume Vasseur, Ignacio Piquero-Zulaica, Julien Raoult, Miguel Angel Valbuena, Stefano Schirone, Sonia Matencio, Aitor Mugarza, Jorge Lobo-Checa

Abstract: Conventional spin-degenerated surface electrons have been effectively manipulated by using organic and inorganic self-assembled nanoarrays as resonators. Step superlattices naturally assembled in vicinal surfaces are a particularly interesting case since they represent simple one-dimensional (1D) models for fundamental studies, and can imprint strong anisotropies in surface electron transport in r… ▽ More Conventional spin-degenerated surface electrons have been effectively manipulated by using organic and inorganic self-assembled nanoarrays as resonators. Step superlattices naturally assembled in vicinal surfaces are a particularly interesting case since they represent simple one-dimensional (1D) models for fundamental studies, and can imprint strong anisotropies in surface electron transport in real devices. Here we present the first realization of periodic resonator arrays on the BiAg2 atom-thick surface alloy with unprecedented atomic precision, and demonstrate their potential ability for tuning helical Rashba states. By employing curved crystals to select local vicinal planes we achieve tunable arrays of monoatomic steps with different morphology and orientation. Scanning the ultraviolet light beam on the curved surface during angle-resolved photoemission experiments allows one to unveil the scattering behavior of spin-textured helical states. In this way, we find coherent scattering of helical Rashba states from the step arrays, as well as step-density-dependent Rashba band shifts and spin-orbit splitting compared to the extended BiAg2 plane. △ Less

Submitted 15 February, 2019; originally announced February 2019.

Comments: 13 pages, 4 figures, 4 supplementary figures

Electronic band structure of ultimately thin silicon oxide on Ru(0001)

Authors: G. Kremer, J. C. Alvarez-Quiceno, S. Lisi, T. Pierron, C. González Pascual, M. Sicot, B. Kierren, D. Malterre, J. Rault, P. Le Fèvre, F. Bertran, Y. J. Dappe, J. Coraux, P. Pochet, Y. Fagot-Revurat

Abstract: Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, w… ▽ More Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sub-lattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below Fermi level, at high binding energies, two of them forming a Dirac cone at K point, and two others forming semi-flat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations. △ Less

Submitted 12 February, 2019; originally announced February 2019.

Comments: Main part : 31 pages, 6 figures / Supporting information : 13 pages, 11 figures

Journal ref: ACS Nano 13, pp. 4720-4730 (2019)

Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals

Authors: Hugo Henck, Debora Pierucci, Jihene Zribi, Federico Bisti, Evangelos Papalazarou, Jean Christophe Girard, Julien Chaste, Francois Bertran, Patrick Le Fevre, Fausto Sirotti, Luca Perfetti, Christine Giorgetti, Abhay Shukla, Julien E. Rault, Abdelkarim Ouerghi

Abstract: Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depend… ▽ More Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Precise experimental determination of the electronic structure of InSe is sorely needed for better understanding of potential properties and device applications. Here, combining scanning tunneling spectroscopy (STS) and two-photon photoemission spectroscopy (2PPE), we demonstrate that InSe exhibits a direct band gap of about 1.25 eV located at the Gamma point of the Brillouin zone (BZ). STS measurements underline the presence of a finite and almost constant density of states (DOS) near the conduction band minimum (CBM) and a very sharp one near the maximum of the valence band (VMB). This particular DOS is generated by a poorly dispersive nature of the top valence band, as shown by angle resolved photoemission spectroscopy (ARPES) investigation. technologies. In fact, a hole effective mass of about m/m0 = -0.95 gammaK direction) was measured. Moreover, using ARPES measurements a spin-orbit splitting of the deeper-lying bands of about 0.35 eV was evidenced. These findings allow a deeper understanding of the InSe electronic properties underlying the potential of III-VI semiconductors for electronic and photonic △ Less

Submitted 24 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Materials 3, 034004 (2019)

Coherent and incoherent bands in La and Rh doped Sr3Ir2O7

Authors: V. Brouet, L. Serrier-Garcia, A. Louat, L. Fruchter, F. Bertran, P. Le Fevre, J. Rault, A Forget, D. Colson

Abstract: In Sr2IrO4 and Sr3Ir2O7, correlations, magnetism and spin-orbit coupling compete on similar energy scales, creating a new context to study metal-insulator transitions (MIT). We use here Angle-Resolved photoemission to investigate the MIT as a function of hole and electron doping in Sr3Ir2O7, obtained respectively by Ir/Rh and Sr/La substitutions. We show that there is a clear reduction as a functi… ▽ More In Sr2IrO4 and Sr3Ir2O7, correlations, magnetism and spin-orbit coupling compete on similar energy scales, creating a new context to study metal-insulator transitions (MIT). We use here Angle-Resolved photoemission to investigate the MIT as a function of hole and electron doping in Sr3Ir2O7, obtained respectively by Ir/Rh and Sr/La substitutions. We show that there is a clear reduction as a function of doping of the gap between a lower and upper band on both sides of the Fermi level, from 0.2eV to 0.05eV. Although these two bands have a counterpart in band structure calculations, they are characterized by a very different degree of coherence. The upper band exhibits clear quasiparticle peaks, while the lower band is very broad and loses weight as a function of doping. Moreover, their ARPES spectral weights obey different periodicities, reinforcing the idea of their different nature. We argue that a very similar situation occurs in Sr2IrO4 and conclude that the physics of the two families is essentially the same. △ Less

Submitted 11 December, 2018; v1 submitted 9 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. B 98, 235101 (2018)

HAXPES for materials science at the GALAXIES beamline

Authors: J. -P. Rueff, J. E. Rault, J. M. Ablett, Y. Utsumi, D. Céolin

Abstract: In this article, we will discuss the recent developments of HAXPES at the GALAXIES beamline at the SOLEIL synchrotron for the study of advanced materials. In this article, we will discuss the recent developments of HAXPES at the GALAXIES beamline at the SOLEIL synchrotron for the study of advanced materials. △ Less

Submitted 19 July, 2018; originally announced July 2018.

Comments: Preprint

Journal ref: Synchrotron Radiation News 31, 4 (2018)

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Authors: Debora Pierucci, Jihene Zribi, Hugo Henck, Julien Chaste, Mathieu G. Silly, François Bertran, Patrick Le Fevre, Bernard Gil, Alex Summerfield, Peter H. Beton, Sergei V. Novikov, Guillaume Cassabois, Julien E. Rault, Abdelkarim Ouerghi

Abstract: We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflec… ▽ More We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflecting the high quality of the h-BN films. The measured valence band maximum (VBM) located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap ~ 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN. △ Less

Submitted 19 June, 2018; originally announced June 2018.

Comments: 9 pages, 4 figures SI 5 pages 2 figures

Journal ref: Applied Physics Letters 112, 253102 (2018)

Band structure and Fermi surfaces of the reentrant ferromagnetic superconductor Eu(Fe0.86Ir0.14)2As2

Authors: S. Xing, J. Mansart, V. Brouet, M. Sicot, Y. Fagot-Revurat, B. Kierren, P. Le Fèvre, F. Bertran, J. E. Rault, U. B. Paramanik, Z. Hossain, A. Chainani, D. Malterre

Abstract: The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As… ▽ More The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$. The near E$_F$ Fe 3d-derived band dispersions near the $Γ$ and X high-symmetry points show changes due to Ir substitution, but the FS topology is preserved. From momentum dependent measurements of the superconducting gap measured at T = 5 K, we estimate an essentially isotropic s-wave gap ($Δ\sim5.25\pm 0.25$ meV), indicative of strong-coupling superconductivity with 2$Δ$/k$_{B}$T$_{c}\simeq$ 5.8. The gap gets closed at temperatures T $\geq$ 10 K, and this is attributed to the resistive phase which sets in at T$_M$ = 18 K due to the Eu$^{2+}$-derived magnetic order. The modifications of the FS with Ir substitution clearly indicates an effective hole doping with respect to the parent compound. △ Less

Submitted 18 June, 2018; originally announced June 2018.

Comments: 6 pages, 5 figures

Journal ref: Physical Review B 96, 174513 (2017)

Exploring interlayer Dirac cone coupling in commensurately rotated few-layer graphene on SiC(000-1)

Authors: C. Mathieu, E. H. Conrad, F. Wang, J. E. Rault, V. Feyer, C. M. Schneider, O. Renault, N. Barrett

Abstract: We investigate electronic band-structure images in reciprocal space of few layer graphene epitaxially grown on SiC(000-1). In addition to the observation of commensurate rotation angles of the graphene layers, the k-space images recorded near the Fermi edge highlight structures originating from diffraction of the Dirac cones due to the relative rotation of adjacent layers. The 21.9° and 27° rotati… ▽ More We investigate electronic band-structure images in reciprocal space of few layer graphene epitaxially grown on SiC(000-1). In addition to the observation of commensurate rotation angles of the graphene layers, the k-space images recorded near the Fermi edge highlight structures originating from diffraction of the Dirac cones due to the relative rotation of adjacent layers. The 21.9° and 27° rotation angles between two sheets of graphene are responsible for a periodic pattern that can be described with a superlattice unit cells. The superlattice generates replicas of Dirac cones with smaller wave vectors, due to a Brillouin zone folding. △ Less

Submitted 18 June, 2018; originally announced June 2018.

Comments: 11 pages, 4 figures

Journal ref: Surface and Interface Analysis 46, 1268 (2014)

Charge spill-out and work function of few-layer graphene on SiC(0001)

Authors: O. Renault, A. M. Pascon, H. Rotella, K. Kaja, C. Mathieu, J. E. Rault, P. Blaise, T. Poiroux, N. Barrett, L. R. C. Fonseca

Abstract: We report on the charge spill-out and work function of epitaxial few-layer graphene on 6H-SiC(0001). Experiments from high-resolution, energy-filtered X-ray photoelectron emission microscopy (XPEEM) are combined with ab initio Density Functional Theory calculations using a relaxed interface model. Work function values obtained from theory and experiments are in qualitative agreement, reproducing t… ▽ More We report on the charge spill-out and work function of epitaxial few-layer graphene on 6H-SiC(0001). Experiments from high-resolution, energy-filtered X-ray photoelectron emission microscopy (XPEEM) are combined with ab initio Density Functional Theory calculations using a relaxed interface model. Work function values obtained from theory and experiments are in qualitative agreement, reproducing the previously observed trend of increasing work function with each additional graphene plane. Electrons transfer at the SiC/graphene interface through a buffer layer causes an interface dipole moment which is at the origin of the graphene work function modulation. The total charge transfer is independent of the number of graphene layers, and is consistent with the constant binding energy of the SiC component of the C 1s core-level measured by XPEEM. Charge leakage into vacuum depends on the number of graphene layers explaining why the experimental, layer-dependent C 1s-graphene core-level binding energy shift does not rigidly follow that of the work function. Thus, a combination of charge transfer at the SiC/graphene interface and charge spill-out into vacuum resolves the apparent discrepancy between the experimental work function and C1s binding energy. △ Less

Submitted 13 June, 2018; originally announced June 2018.

Comments: 14 pages, 9 figures

Journal ref: Journal of Physics D: Applied Physics 47, 295303 (2014)

Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures

Authors: Hugo Henck, Zeineb Ben Aziza, Debora Pierucci, Feriel Laourine, Francesco Reale, Pawel Palczynski, Julien Chaste, Mathieu G. Silly, François Bertran, Patrick Le Fevre, Emmanuel Lhuillier, Taro Wakamura, Cecilia Mattevi, Julien E. Rault, Matteo Calandra, Abdelkarim Ouerghi

Abstract: Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-res… ▽ More Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements (ARPES) and Density Functional Theory (DFT) calculations. The results show good electronic properties as well as well-defined band arising from the strong splitting of the single layer WS2 valence band at K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single layer WS2. . Our results provide an important reference for future studies of electronic properties of WS2 and its applications in valleytronic devices. △ Less

Submitted 13 June, 2018; originally announced June 2018.

Comments: 11 pages, 3 figures + SI 7 pages 8 figures

Journal ref: Physical Review B 97, 155421 (2018)

Full field electron spectromicroscopy applied to ferroelectric materials

Authors: N. Barrett, J. E. Rault, J. L. Wang, C. Mathieu, A. Locatelli, T. O. Mentes, M. A. Nino, S. Fusil, M. Bibes, A. Barthelemy, D. Sando, W. Ren, S. Prosandeev, L. Bellaiche, B. Vilquin, A. Petraru, I. P. Krug, C. M. Schneider

Abstract: The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both P… ▽ More The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both PEEM and LEEM can be used in direct and reciprocal space imaging. Together, they provide access to surface charge, work function, topography, chemical mapping, surface crystallinity and band structure. Examples of applications for the study of ferroelectric thin films and single crystals are presented. △ Less

Submitted 13 June, 2018; originally announced June 2018.

Comments: 15 pages, 9 figures

Journal ref: Journal of Applied Physics 113, 187217 (2013)

The Galaxies Beamline at SOLEIL Synchrotron: Inelastic X-ray Scattering and Photoelectron Spectroscopy in the Hard X-ray Range

Authors: J. -P. Rueff, J. M. Ablett, D. Céolin, D. Prieur, Th. Moreno, V. Balédent, B. Lassalle, J. E. Rault, M. Simon, A. Shukla

Abstract: The GALAXIES beamline at the SOLEIL synchrotron is dedicated to inelastic x-ray scattering (IXS) and photoelectron spectroscopy (HAXPES) in the 2.3-12 keV hard x-ray range. These two techniques offer powerful, complementary methods of characterization of materials with bulk sensitivity, chemical and orbital selectivity, resonant enhancement and high resolving power. After a description of the beam… ▽ More The GALAXIES beamline at the SOLEIL synchrotron is dedicated to inelastic x-ray scattering (IXS) and photoelectron spectroscopy (HAXPES) in the 2.3-12 keV hard x-ray range. These two techniques offer powerful, complementary methods of characterization of materials with bulk sensitivity, chemical and orbital selectivity, resonant enhancement and high resolving power. After a description of the beamline components and endstations, we address the beamline performances through a selection of recent works both in the solid and gas phases and using either IXS or HAXPES approaches. Prospects for studies on liquids are discussed. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 11 pages, 5 figures

Journal ref: Journal of Synchrotron Radiation 22, 175-179 (2015)

Polarization sensitive surface band structure of doped BaTiO3(001)

Authors: J. E. Rault, J. Dionot, C. Mathieu, V. Feyer, C. M. Schneider, G. Geneste, N. Barrett

Abstract: We present a spatial and wave-vector resolved study of the electronic structure of micron sized ferroelectric domains at the surface of a BaTiO3(001) single crystal. The n-type doping of the BaTiO3 is controlled by in-situ vacuum and oxygen annealing, providing experimental evidence of a surface paraelectric-ferroelectric transition below a critical doping level. Real space imaging of photoemissio… ▽ More We present a spatial and wave-vector resolved study of the electronic structure of micron sized ferroelectric domains at the surface of a BaTiO3(001) single crystal. The n-type doping of the BaTiO3 is controlled by in-situ vacuum and oxygen annealing, providing experimental evidence of a surface paraelectric-ferroelectric transition below a critical doping level. Real space imaging of photoemission threshold, core level and valence band spectra show contrast due to domain polarization. Reciprocal space imaging of the electronic structure using linearly polarized light provides unambiguous evidence for the presence of both in and out-of plane polarization with two and fourfold symmetry, respectively. The results agree well with first principles calculations. △ Less

Submitted 10 June, 2018; originally announced June 2018.

Comments: 6 pages, 5 figures

Journal ref: Physical Review Letters 111, 127602 (2013)

Interface chemical and electronic properties of LaAlO3/SrVO3 heterostructures

Authors: Arnaud Fouchet, Julien E. Rault, Mickaël Allain, Bruno Bérini, J. -P. Rueff, Yves Dumont, Niels Keller

Abstract: We have studied the chemical and electronic properties of LaAlO3/SrVO3 ultrathin films by combining hard x-ray photoemission spectroscopy and transport measurements. We compare single SrVO3 (SVO) ultrathin films and SrVO3 buried below a polar LaAlO3 (LAO) thin layer, both epitaxially grown on SrTiO3. While ultrathin films (4 unit cells) of SVO do show insulating behavior over the entire temperatur… ▽ More We have studied the chemical and electronic properties of LaAlO3/SrVO3 ultrathin films by combining hard x-ray photoemission spectroscopy and transport measurements. We compare single SrVO3 (SVO) ultrathin films and SrVO3 buried below a polar LaAlO3 (LAO) thin layer, both epitaxially grown on SrTiO3. While ultrathin films (4 unit cells) of SVO do show insulating behavior over the entire temperature range, the LAO/SVO interface has a resistivity minimum at 250 K. When increasing the SVO layer thickness, the minimum is observed to shift to higher temperatures, but the resistivity stays always smaller than that of comparable SVO single films. Hard x-ray photoemission spectroscopy reveals a surface or interface related V5+ component in the V 2p spectra for SVO films and LAO/SVO heterostructures, respectively, attributed to a strongly oxidized component. This chemical reconstruction is weaker in LAO/SVO heterostructures compared to single SVO films. We show that this dead layer in SVO ultrathin films has to be considered when the film thickness reaches the few unit-cells limit and propose solutions on how to prevent this detrimental effect. △ Less

Submitted 8 June, 2018; originally announced June 2018.

Comments: 15 pages, 4 figures + SI 2 pages, 1 figure

Journal ref: Journal of Applied Physics 123, 055302 (2018)

Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)

Authors: Hugo Henck, Zeineb Ben Aziza, Olivia Zill, Debora Pierucci, Carl H. Naylor, Mathieu G. Silly, Noelle Gogneau, Fabrice Oehler, Stephane Collin, Julien Brault, Fausto Sirotti, François Bertran, Patrick Le Fèvre, Stéphane Berciaud, A. T Charlie Johnson, Emmanuel Lhuillier, Julien E. Rault, Abdelkarim Ouerghi

Abstract: Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray p… ▽ More Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed; which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and -0.51 eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV. △ Less

Submitted 8 June, 2018; originally announced June 2018.

Comments: 13 pages, 5 figures + SI 2 pages, 2 figures

Journal ref: Physical Review B 96, 115312 (2017)

Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide

Authors: Debora Pierucci, Hugo Henck, Zeineb Ben Aziza, Carl H. Naylor, A. Balan, Julien E. Rault, M. G. Silly, Yannick J. Dappe, François Bertran, Patrick Le Fevre, F. Sirotti, A. T Charlie Johnson, Abdelkarim Ouerghi

Abstract: Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic… ▽ More Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2 can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS2 flakes. The successful incorporation of hydrogen in MoS2 leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS2 confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS2 hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements. △ Less

Submitted 8 June, 2018; v1 submitted 7 June, 2018; originally announced June 2018.

Comments: 15 pages, 6 figures + SI 3 pages 3 figures. Pre-print published with the authorization of ACS Publications

Journal ref: ACS Nano 11, 1755 (2017)

Enhancement of photovoltaic efficiency by insertion of a polyoxometalate layer at the anode of an organic solar cell

Authors: M. Alaaeddine, Q. Zhu, D. Fichou, G. Izzet, J. E. Rault, N. Barrett, A. Proust, L. Tortech

Abstract: In this article the Wells-Dawson polyoxometalate K6[P2W18O62] is grown as an interfacial layer between indium tin oxide and bulk heterojunction of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The structure of the POM layers depends on the thickness and shows a highly anisotropic surface organization. The films have been characterized by atomic force microsco… ▽ More In this article the Wells-Dawson polyoxometalate K6[P2W18O62] is grown as an interfacial layer between indium tin oxide and bulk heterojunction of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The structure of the POM layers depends on the thickness and shows a highly anisotropic surface organization. The films have been characterized by atomic force microscopy and X-ray photoelectron spectroscopy (XPS) to gain insight into their macroscopic organization and better understand their electronic properties. Then, they were put at the anodic interface of a P3HT:PCBM organic solar cell and characterized on an optical bench. The photovoltaic efficiency is discussed in terms of the benefit of the polyoxometalate at the anodic interface of an organic photovoltaic cell. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 7 pages, 6 figures

Journal ref: Inorganic Chemistry Frontiers 1, 682 (2014)

Polarization dependent chemistry of ferroelectric BaTiO3 (001) domains

Authors: Yanyu Mi, Gregory Geneste, Julien Rault, Claire Mathieu, Alexandre Pancotti, Nicholas Barrett

Abstract: Recent works suggest that the surface chemistry, in particular, the presence of oxygen vacancies can affect the polarization in a ferroelectric material. This should, in turn, influence the domain ordering driven by the need to screen the depolarizing field. Here we show using density functional theory that the presence of oxygen vacancies at the surface of BaTiO3 (001) preferentially stabilizes a… ▽ More Recent works suggest that the surface chemistry, in particular, the presence of oxygen vacancies can affect the polarization in a ferroelectric material. This should, in turn, influence the domain ordering driven by the need to screen the depolarizing field. Here we show using density functional theory that the presence of oxygen vacancies at the surface of BaTiO3 (001) preferentially stabilizes an inward pointing, P-, polarization. Mirror electron microscopy measurements of the domain ordering confirm the theoretical results. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 11 pages, 6 figures

Journal ref: Journal of Physics: Condensed Matter 24, 275901 (2012)

Influence of the ferroelectric polarization on the electronic structure of BaTiO3 thin films

Authors: N. Barrett, J. Rault, I. Krug, B. Vilquin, G. Niu, B. Gautier, D. Albertini, O. Renault

Abstract: Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using PiezoForce Microscopy (PFM). The domain dependent electronic structure has been studied using fully energy-filtered PhotoEmission Microscopy (PEEM) and synchrotron radiation. Shifts, induced by ferroelectric polarization,… ▽ More Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using PiezoForce Microscopy (PFM). The domain dependent electronic structure has been studied using fully energy-filtered PhotoEmission Microscopy (PEEM) and synchrotron radiation. Shifts, induced by ferroelectric polarization, of up to 300 meV are observed in the work function of the sample. The surface is Ba-O terminated. Polarization-induced distortion of the electronic structure is observed in the valence band and on the Ba 3d, Ti 2p and O 1s core levels of BTO. Polarization dependent surface adsorption is observed. A simple electrostatic model based on net surface charge is not sufficient to explain the observed modifications in the electronic levels. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Comments: 5 pages, 7 figures

Journal ref: Surace and Interface Analysis, 42 1690-1694 (2010)

Fine-scale observations of the Doppler frequency shifts affecting meteor head radio echoes

Authors: Jean-Louis Rault, Mirel Birlan, Cyril Blanpain, Sylvain Bouley, Stéphane Caminade, François Colas, Jérôme Gattacceca, Simon Jeanne, Julien Lecubin, Adrien Malgoyre, Chiara Marmo, Jérémie Vaubaillon, Pierre Vernazza, Brigitte Zanda

Abstract: The French FRIPON (Fireball Recovery and Interplanetary Observation Network) programme relies on a video cameras network associated to radio sensors running in a radar multistatic configuration to observe fireballs and to determine meteoroid accurate orbits and potential meteorites strewnfields. This paper focuses on some peculiar phenomena observed with radio means during the final phase of the m… ▽ More The French FRIPON (Fireball Recovery and Interplanetary Observation Network) programme relies on a video cameras network associated to radio sensors running in a radar multistatic configuration to observe fireballs and to determine meteoroid accurate orbits and potential meteorites strewnfields. This paper focuses on some peculiar phenomena observed with radio means during the final phase of the meteors flight △ Less

Submitted 14 April, 2018; originally announced April 2018.

Comments: International Meteor Conference 2017

Interface properties and built-in potential profile of a LaCrO$_3$/SrTiO$_3$ superlattice determined by standing-wave excited photoemission spectroscopy

Authors: Shih-Chieh Lin, Cheng-Tai Kuo, Ryan B. Comes, Julien E. Rault, Jean-Pascal Rueff, Slavomir Nemšák, Amina Taleb, Jeffrey B. Kortright, Julia Meyer-Ilse, Eric Gullikson, Peter V. Sushko, Steven R. Spurgeon, Mathias Gehlmann, Mark E. Bowden, Lukasz Plucinski, Scott A. Chambers, Charles S. Fadley

Abstract: LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced polarization. In this study, we have used soft- and hard x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to generate a quantitative determination of… ▽ More LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced polarization. In this study, we have used soft- and hard x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to generate a quantitative determination of the elemental depth profiles and interface properties, band alignments, and the depth distribution of the interface-induced built-in potentials in the two constituent oxides. We observe an alternating charged interface configuration: a positively charged (LaO)$^+$/(TiO$_2$)$^0$ intermediate layer at the LCO$_\textbf{top}$/STO$_\textbf{bottom}$ interface and a negatively charged (SrO)$^0$/(CrO$_2$)$^-$ intermediate layer at the STO$_\textbf{top}$/LCO$_\textbf{bottom}$ interface. Using core-level SW data, we have determined the depth distribution of species, including through the interfaces, and these results are in excellent agreement with scanning transmission electron microscopy and electron energy loss spectroscopy (STEM-EELS) mapping of local structure and composition. SW-XPS also enabled deconvolution of the LCO-contributed and STO- contributed matrix-element-weighted density of states (MEWDOSs) from the valence band (VB) spectra for the LCO/STO superlattice (SL). Monitoring the VB edges of the deconvoluted MEWDOS shifts with a change in probing profile, the alternating charge- induced built-in potentials are observed in both constituent oxides. Finally, using a two-step simulation approach involving first core-level binding energy shifts and then valence-band modeling, the built-in potential gradients across the SL are resolved in detail and represented by the depth distribution of VB edges. △ Less

Submitted 31 August, 2018; v1 submitted 27 February, 2018; originally announced February 2018.

Comments: Main text: 29 pages, 5 figures; Supplementary Information: 20 pages, 10 figures

Journal ref: Phys. Rev. B 98, 165124 (2018)

Characterization of free standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

Authors: G. Conti, S. Nemšák, C. -T. Kuo, M. Gehlmann, C. Conlon, A. Keqi, A. Rattanachata, O. Karslıoğlu, J. Mueller, J. Sethian, H. Bluhm, J. E. Rault, J. P. Rueff, H. Fang, A. Javey, C. S. Fadley

Abstract: Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By co… ▽ More Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with angstrom precision. We determined that: i) the exposure to air induced the formation of an InAsO$_4$ layer on top of the stoichiometric InAs(QM); ii) the top interface between the air-side InAsO$_4$ and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; iii) the bottom interface between the InAs(QM) and the native oxide SiO$_2$ on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO$_2$/(Si/Mo) substrate was determined by HXPS. The value of $VBO = 0.2 \pm 0.04$ eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO$_2$ heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials. △ Less

Submitted 16 January, 2018; originally announced January 2018.

Comments: three figures

Atomic-layer-resolved composition and electronic structure of the cuprate Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ from soft x-ray standing-wave photoemission

Authors: Cheng-Tai Kuo, Shih-Chieh Lin, Giuseppina Conti, Shu-Ting Pi, Luca Moreschini, Aaron Bostwick, Julia Meyer-Ilse, Eric Gullikson, Jeffrey B. Kortright, Slavomir Nemšák, Julien E. Rault, Patrick Le Fèvre, François Bertran, Andrés F. Santander-Syro, Ivan A. Vartanyants, Warren E. Pickett, Romuald Saint-Martin, Amina Taleb, Charles S. Fadley

Abstract: A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties… ▽ More A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties. Applying SW photoemission to Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ yields the depth distribution of atomic composition and the layer-resolved densities of states. We detect significant Ca presence in the SrO layers and oxygen bonding to three different cations. The layer-resolved valence electronic structure is found to be strongly influenced by the supermodulation structure--as determined by comparison to DFT calculations, by Ca-Sr intermixing, and by the Cu 3d-3d Coulomb interaction, further clarifying the complex interactions in this prototypical cuprate. Measurements of this type for other quasi-two-dimensional materials with large-c represent a promising future direction. △ Less

Submitted 24 September, 2018; v1 submitted 16 January, 2018; originally announced January 2018.

Comments: 22 pages, 5 figures, plus Supplemental Material (15 pages)

Report number: arXiv:1801.05142

Journal ref: Phys. Rev. B 98, 155133 (2018)

Electronic Structure of the Dilute Magnetic Semiconductor $Ga_{1-x}Mn_xP$ from Hard X-ray Photoelectron Spectroscopy and Hard X-ray Angle-Resolved Photoemission

Authors: Armela Keqi, Mathias Gehlmann, Giuseppina Conti, Slavomir Nemšák, Arunothai Rattanachata, Jan Minár, Lukasz Plucinski, Julien E Rault, Jean-Pascal Rueff, Mike Scarpulla, Mihael Hategan, Gunnar K Pálsson, Catherine Conlon, Daria Eiteneer, Alexander Y Saw, Alexander X Gray, Keisuke Kobayashi, Shigenori Ueda, Oscar D Dubon, Claus M Schneider, Charles S Fadley

Abstract: We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) $Ga_{0.98}Mn_{0.02}P$ and compared it to that of an undoped $GaP$ reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, in order to und… ▽ More We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) $Ga_{0.98}Mn_{0.02}P$ and compared it to that of an undoped $GaP$ reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, in order to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between $Ga_{0.98}Mn_{0.02}P$ and $GaP$ in both angle-resolved and angle-integrated valence spectra. The $Ga_{0.98}Mn_{0.02}P$ bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host $GaP$ crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations, and a prior HARPES study of $Ga_{0.97}Mn_{0.03}As$ and $GaAs$ (Gray et al. Nature Materials 11, 957 (2012)), demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both $GaAs$ and $GaP$. △ Less

Submitted 14 January, 2018; originally announced January 2018.

Comments: 37 pages (double spaced) 10 figures

Journal ref: Phys. Rev. B 97, 155149 (2018)

Formation of an incoherent metallic state in Rh-doped Sr$_2$IrO$_4$

Authors: Alex Louat, Fabrice Bert, Lise Serrier-Garcia, François Bertran, Patrick Le Fèvre, Julien Rault, Véronique Brouet

Abstract: Sr$_2$IrO$_4$ is the archetype of the spin-orbit Mott insulator, but the nature of the metallic states that may emerge from this type of insulator is still not very well known. We study with angle-resolved photoemission the insulator-to-metal transition observed in Sr$_2$Ir$_{1-x}$Rh$_x$O$_4$ when Ir is substituted by Rh (0.02 < $x$ < 0.35). The originality of the Rh doping is that Ir and Rh, whic… ▽ More Sr$_2$IrO$_4$ is the archetype of the spin-orbit Mott insulator, but the nature of the metallic states that may emerge from this type of insulator is still not very well known. We study with angle-resolved photoemission the insulator-to-metal transition observed in Sr$_2$Ir$_{1-x}$Rh$_x$O$_4$ when Ir is substituted by Rh (0.02 < $x$ < 0.35). The originality of the Rh doping is that Ir and Rh, which are formally isovalent, adopt different charge states, a rather unusual and inhomogeneous situation. We show that the evolution to the metallic state can be essentially understood as a shift of the Fermi level into the lower Hubbard band of Sr$_2$IrO$_4$. The Mott gap appears quite insensitive to the introduction of up to $\sim$20\% holes in this band. The metallic phase, which forms for $x$ > 0.07, is not a Fermi liquid. It is characterized by the absence of quasiparticles, unrenormalized band dispersion compared to calculations and an $\sim$30-meV pseudo-gap on the entire Fermi surface. △ Less

Submitted 27 April, 2018; v1 submitted 4 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. B 97, 161109 (2018)