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Cavity-Enhanced Vernier Spectroscopy with a Chip-Scale Mid-Infrared Frequency Comb
Authors:
Lukasz A. Sterczewski,
Tzu-Ling Chen,
Douglas C. Ober,
Charles R. Markus,
Chadwick L. Canedy,
Igor Vurgaftman,
Clifford Frez,
Jerry R. Meyer,
Mitchio Okumura,
Mahmood Bagheri
Abstract:
Chip-scale optical frequency combs can provide broadband spectroscopy for diagnosing complex organic molecules. They are also promising as miniaturized laser spectrometers in applications ranging from atmospheric chemistry to geological science and the search for extraterrestrial life. While optical cavities are commonly used to boost sensitivity, it is challenging to realize a compact cavity-enha…
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Chip-scale optical frequency combs can provide broadband spectroscopy for diagnosing complex organic molecules. They are also promising as miniaturized laser spectrometers in applications ranging from atmospheric chemistry to geological science and the search for extraterrestrial life. While optical cavities are commonly used to boost sensitivity, it is challenging to realize a compact cavity-enhanced comb-based spectrometer. Here, we apply the Vernier technique to free-running operation of an interband cascade laser frequency comb in a simple linear geometry that performs cavity-enhanced chemical sensing. A centimeter-scale high-finesse cavity simultaneously provides selective mode filtering and enhancement of the path length to 30 meters. As a proof-of-concept, we sense transient open-path releases of ppm-level difluoroethane with 2 ms temporal resolution over a 1 THz optical bandwidth centered at 3.64 $μ$m.
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Submitted 7 December, 2021;
originally announced December 2021.
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Zinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode
Authors:
Michael A. Mastro,
Chul Soo Kim,
Mijin Kim,
Josh Caldwell,
Ron T. Holm,
Igor Vurgaftman,
Jihyun Kim,
Charles R. Eddy Jr.,
Jerry R. Meyer
Abstract:
A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of an ideal micro-cavity optical thickness of lambda/2 is impractical for III-nitride LEDs, and in realistic multi-mode devices a large fraction of the light is lo…
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A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of an ideal micro-cavity optical thickness of lambda/2 is impractical for III-nitride LEDs, and in realistic multi-mode devices a large fraction of the light is lost to internal refraction as guided light. Therefore, a 2D photonic crystal on the surface of the LED was used to diffract and thus redirect this guided light out of the semiconductor over several hundred microns. Additionally, the employment of a post-epitaxy ZnS 2D photonic crystal avoided the typical etching into the GaN:Mg contact layer, a procedure which can cause damage to the near surface.
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Submitted 2 September, 2020;
originally announced September 2020.
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Auger Recombination Coefficients in Type-I Mid-Infrared InGaAsSb Quantum Well Lasers
Authors:
Timothy D. Eales,
Igor P. Marko,
Alfred R. Adams,
Jerry R. Meyer,
Igor Vurgaftman,
Stephen J. Sweeney
Abstract:
From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7-3.2 $μ$m wavelength range. From hydrostatic pressure measureme…
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From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7-3.2 $μ$m wavelength range. From hydrostatic pressure measurements, the non-radiative component of threshold currents for individual lasers was determined continuously as a function of wavelength. The results are analysed to determine the Auger coefficients quantitatively. This procedure involves calculating the threshold carrier density based on device properties, optical losses, and estimated Auger contribution to the total threshold current density. We observe a minimum in the Auger rate around 2.1 $μ$m. A strong increase with decreasing mid-infrared wavelength (< 2 $μ$m) indicates the prominent role of inter-valence Auger transitions to the split-off hole band (CHSH process). Above 2 $μ$m, the increase with wavelength is approximately exponential due to CHCC or CHLH Auger recombination, limiting long wavelength operation. The observed dependence is consistent with that derived by analysing literature values of lasing thresholds for type-I InGaAsSb quantum well diodes. Over the wavelength range considered, the Auger coefficient varies from a minimum of $\leq$ 1x10$ ^{16}$cm$^{4}$s$^{-1}$ at 2.1 $μ$m to ~8x10$^{16}$cm$^{4}$s$^{-1}$ at 3.2 $μ$m.
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Submitted 28 June, 2020;
originally announced June 2020.
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Mid-infrared dual-comb spectroscopy with low drive-power on-chip sources
Authors:
Lukasz A. Sterczewski,
Jonas Westberg,
Mahmood Bagheri,
Clifford Frez,
Igor Vurgaftman,
Chadwick L. Canedy,
William W. Bewley,
Charles D. Merritt,
Chul Soo Kim,
Mijin Kim,
Jerry R. Meyer,
Gerard Wysocki
Abstract:
Two semiconductor optical frequency combs consuming less than 1 W of electrical power are used to demonstrate high-sensitivity mid-infrared dual-comb spectroscopy in the important 3-4 $μ$m spectral region. The devices are 4 millimeters long by 4 microns wide, and each emits 8 mW of average optical power. The spectroscopic sensing performance is demonstrated by measurements of methane and hydrogen…
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Two semiconductor optical frequency combs consuming less than 1 W of electrical power are used to demonstrate high-sensitivity mid-infrared dual-comb spectroscopy in the important 3-4 $μ$m spectral region. The devices are 4 millimeters long by 4 microns wide, and each emits 8 mW of average optical power. The spectroscopic sensing performance is demonstrated by measurements of methane and hydrogen chloride with a spectral coverage of 33 cm$^{-1}$ (1 THz), 0.32 cm$^{-1}$ (9.7 GHz) frequency sampling interval, and peak signal-to-noise ratio of ~100 at 100 $μ$s integration time. The monolithic design, low drive power, and direct generation of mid-infrared radiation are highly attractive for portable broadband spectroscopic instrumentation in future terrestrial and space applications.
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Submitted 20 November, 2018;
originally announced December 2018.
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Multiheterodyne spectroscopy using interband cascade lasers
Authors:
Lukasz A. Sterczewski,
Jonas Westberg,
Charles Link Patrick,
Chul Soo Kim,
Mijin Kim,
Chadwick L. Canedy,
William W. Bewley,
Charles D. Merritt,
Igor Vurgaftman,
Jerry R. Meyer,
Gerard Wysocki
Abstract:
While mid-infrared radiation can be used to identify and quantify numerous chemical species, contemporary broadband mid-IR spectroscopic systems are often hindered by large footprints, moving parts and high power consumption. In this work, we demonstrate multiheterodyne spectroscopy using interband cascade lasers, which combines broadband spectral coverage with high spectral resolution and energy-…
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While mid-infrared radiation can be used to identify and quantify numerous chemical species, contemporary broadband mid-IR spectroscopic systems are often hindered by large footprints, moving parts and high power consumption. In this work, we demonstrate multiheterodyne spectroscopy using interband cascade lasers, which combines broadband spectral coverage with high spectral resolution and energy-efficient operation. The lasers generate up to 30 mW of continuous wave optical power while consuming less than 0.5 W of electrical power. A computational phase and timing correction algorithm is used to obtain kHz linewidths of the multiheterodyne beat notes and up to 30 dB improvement in signal-to-noise ratio. The versatility of the multiheterodyne technique is demonstrated by performing both rapidly swept absorption and dispersion spectroscopic assessments of low-pressure ethylene (C$_2$H$_4$) acquired by extracting a single beat note from the multiheterodyne signal, as well as broadband multiheterodyne spectroscopy of methane (CH$_4$) acquired with all available beat notes with microsecond temporal resolution and an instantaneous optical bandwidth of 240 GHz. The technology shows excellent potential for portable and high-resolution solid state spectroscopic chemical sensors operating in the mid-infrared.
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Submitted 10 September, 2017;
originally announced September 2017.
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External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures
Authors:
X. Liu,
W. L. Lim,
L. V. Titova,
T. Wojtowicz,
M. Kutrowski,
K. J. Yee,
M. Dobrowolska,
J. K. Furdyna,
S. J. Potashnik,
M. B. Stone,
P. Schiffer,
I. Vurgaftman,
J. R. Meyer
Abstract:
In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect (MOKE) measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperat…
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In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect (MOKE) measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperatures we observe that the magnetization direction in several samples is intermediate between the normal and in-plane axes. As the temperature increases, however, the easy axis rotates to the direction normal to the plane. We further demonstrate that the easy magnetization axis can be controlled by incident light through a bolometric effect, which induces a pronounced increase in the amplitude of the AHE. A mean-field-theory model for the carrier-mediated ferromagnetism reproduces the tendency for dramatic reorientations of the magnetization axis, but not the specific sensitivity to small temperature variations.
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Submitted 28 August, 2003;
originally announced August 2003.
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Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys
Authors:
T. Wojtowicz,
W. L. Lim,
X. Liu,
G. Cywinski,
M. Kutrowski,
L. V. Titova,
K. Yee,
M. Dobrowolska,
J. K. Furdyna,
K. M. Yu,
W. Walukiewicz,
G. B. Kim,
M. Cheon,
X. Chen,
S. M. Wang,
H. Luo,
I. Vurgaftman,
J. R. Meyer
Abstract:
We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system…
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We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.
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Submitted 1 July, 2003;
originally announced July 2003.
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Enhancement of Curie temperature in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As ferromagnetic heterostructures by Be modulation doping
Authors:
T. Wojtowicz,
W. L. Lim,
X. Liu,
M. Dobrowolska,
J. K. Furdyna,
K. M. Yu,
W. Walukiewicz,
I. Vurgaftman,
J. R. Meyer
Abstract:
The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitat…
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The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T_C occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth.
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Submitted 2 May, 2003;
originally announced May 2003.
