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Influence of Gamma-X mixing on optical orientation and alignment of excitons in (In,Al)As/AlAs quantum dots
Authors:
S. V. Nekrasov,
N. O. Mikhailenko,
M. D. Ragoza,
T. S. Shamirzaev,
Yu. G. Kusrayev
Abstract:
The effect of Gamma-X mixing on the energy levels fine structure of indirect in k-space excitons in an ensemble of (In,Al)As/AlAs quantum dots with type I band alignment was experimentally studied. Using the methods of optical spin orientation and optical alignment in a magnetic field, an increase in the anisotropic exchange splitting of excitonic levels (from approximately 0.6 to 5 ueV) due to th…
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The effect of Gamma-X mixing on the energy levels fine structure of indirect in k-space excitons in an ensemble of (In,Al)As/AlAs quantum dots with type I band alignment was experimentally studied. Using the methods of optical spin orientation and optical alignment in a magnetic field, an increase in the anisotropic exchange splitting of excitonic levels (from approximately 0.6 to 5 ueV) due to the Gamma-X mixing was revealed. The extent of direct electronic states admixing to indirect ones depends on the size of the quantum dot. On the other hand, the optical and spin properties of excitons change radically with increasing of the Gamma states admixture to the X states: in the absence of a magnetic field, the optical orientation of excitons decreases from 18 to 3%, while the alignment of excitons is restored from 6 to 53%.
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Submitted 7 December, 2023;
originally announced December 2023.
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Electrical resistance associated with the scattering of optically oriented electrons in n-GaAs
Authors:
M. D. Ragoza,
N. V. Kozyrev,
S. V. Nekrasov,
B. R. Namozov,
Yu. G. Kusrayev,
N. Bart,
A. Ludwig,
A. D. Wieck
Abstract:
In a bulk GaAs crystal, an unusual magnetoresistance effect, which takes place when a spin-polarized current flows through the sample, was detected. Under conditions of optical pumping of electron spins, an external magnetic field directed along the electric current and perpendicular to the oriented spins decreases the resistance of the material. The phenomenon is due to the spin-dependent scatter…
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In a bulk GaAs crystal, an unusual magnetoresistance effect, which takes place when a spin-polarized current flows through the sample, was detected. Under conditions of optical pumping of electron spins, an external magnetic field directed along the electric current and perpendicular to the oriented spins decreases the resistance of the material. The phenomenon is due to the spin-dependent scattering of electrons by neutral donors. It was found that the sign of the magnetoresistance does not depend on the sign of the exciting light circular polarization, the effect is even with respect to the sign of the spin polarization of the carriers, which indicates a correlation between the spins of optically oriented free electrons and electrons localized on donors.
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Submitted 30 November, 2023;
originally announced November 2023.
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Optical orientation of excitons in a longitudinal magnetic field in indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment
Authors:
T. S. Shamirzaev,
A. V. Shumilin,
D. S. Smirnov,
D. Kudlacik,
S. V. Nekrasov,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
The exciton recombination and spin dynamics in (In,Al)As/AlAs quantum dots (QDs) with indirect band gap and type-I band alignment are studied. The negligible (less than $0.2~μ$eV) value of the anisotropic exchange interaction in these QDs prevents a mixing of the excitonic basis states with pure spin and allows for the formation of spin polarized bright excitons for quasi-resonant circularly polar…
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The exciton recombination and spin dynamics in (In,Al)As/AlAs quantum dots (QDs) with indirect band gap and type-I band alignment are studied. The negligible (less than $0.2~μ$eV) value of the anisotropic exchange interaction in these QDs prevents a mixing of the excitonic basis states with pure spin and allows for the formation of spin polarized bright excitons for quasi-resonant circularly polarized excitation. In a longitudinal magnetic field, the recombination and spin dynamics of the excitons are controlled by the hyperfine interaction between the electron and nuclear spins. A QD blockade by dark excitons is observed in magnetic field eliminating the impact of the nuclear spin fluctuations. A kinetic equation model, which accounts for the population dynamics of the bright and dark exciton states as well as for the spin dynamics, has been developed, which allows for a quantitative description of the experimental data.
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Submitted 26 January, 2023;
originally announced January 2023.
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Optical alignment and orientation of excitons in ensemble of core/shell CdSe/CdS colloidal nanoplatelets
Authors:
O. O. Smirnova,
I. V. Kalitukha,
A. V. Rodina,
G. S. Dimitriev,
V. F. Sapega,
O. S. Ken,
V. L. Korenev,
N. V. Kozyrev,
S. V. Nekrasov,
Yu. G. Kusrayev,
D. R. Yakovlev,
B. Dubertret,
M. Bayer
Abstract:
We report on the experimental and theoretical studies of optical alignment and optical orientation effects in an ensemble of core/shell CdSe/CdS colloidal nanoplatelets. The dependences of three Stokes parameters on the magnetic field applied in the Faraday geometry are measured under continuous wave resonant excitation of the exciton photoluminescence. Theoretical model is developed to take into…
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We report on the experimental and theoretical studies of optical alignment and optical orientation effects in an ensemble of core/shell CdSe/CdS colloidal nanoplatelets. The dependences of three Stokes parameters on the magnetic field applied in the Faraday geometry are measured under continuous wave resonant excitation of the exciton photoluminescence. Theoretical model is developed to take into account both bright and dark exciton states in the case of strong electron and hole exchange interaction and random in-plane orientation of the nanoplatelets in ensemble. The data analysis allows us to estimate the time and energy parameters of the bright and dark excitons. The optical alignment effect enables identification of the exciton and trion contributions to the photoluminescence spectrum even in the absence of a clear spectral line resolution.
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Submitted 12 December, 2022;
originally announced December 2022.
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Trion magnetic polarons in (Cd,Mn)Te/(Cd,Mn,Mg)Te quantum wells
Authors:
F. Godejohann,
R. R. Akhmadullin,
K. V. Kavokin,
D. R. Yakovlev,
I. A. Akimov,
B. R. Namozov,
Yu. G. Kusrayev,
G. Karczewski,
T. Wojtowicz,
M. Bayer
Abstract:
A trion magnetic polaron formed by the exchange interaction of a positively charged exciton (trion) with localized spins of Mn$^{2+}$ ions is found experimentally in a 4\,nm wide Cd$_{0.98}$Mn$_{0.02}$Te/Cd$_{0.78}$Mn$_{0.02}$Mg$_{0.2}$Te quantum well containing resident holes. The experiment is performed at a temperature of 1.6 K using resonant excitation of the trion with circularly polarized li…
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A trion magnetic polaron formed by the exchange interaction of a positively charged exciton (trion) with localized spins of Mn$^{2+}$ ions is found experimentally in a 4\,nm wide Cd$_{0.98}$Mn$_{0.02}$Te/Cd$_{0.78}$Mn$_{0.02}$Mg$_{0.2}$Te quantum well containing resident holes. The experiment is performed at a temperature of 1.6 K using resonant excitation of the trion with circularly polarized light. The trion is formed from a resident hole, which is in a hole magnetic polaron state, and a photogenerated electron-hole pair. The dynamical evolution from the hole magnetic polaron to the trion magnetic polaron is accompanied by a spin-flip of the electron, which results in negative circular polarization of the photoluminescence. The degree of circular polarization reaches $-8\%$ at zero magnetic field and strongly decreases in transverse magnetic fields exceeding 0.2 T. Our model considerations show that different localization sizes of the resident and photogenerated holes and the resulting difference in their exchange interaction with the Mn$^{2+}$ spins maintains Mn spin polarization. The resulting exchange field of Mn acting on the electron provides a robust spin polarization of the trion magnetic polaron. We evaluate the electron exchange energy in the T$^+$MP to be 0.19~meV, and the T$^+$MP binding energy to be about 0.5 - 1 meV.
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Submitted 11 August, 2022;
originally announced August 2022.
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Magneto-optics of excitons interacting with magnetic ions in CdSe/CdMnS colloidal nanoplatelets
Authors:
E. V. Shornikova,
D. R. Yakovlev,
D. O. Tolmachev,
V. Yu. Ivanov,
I. V. Kalitukha,
V. F. Sapega,
D. Kudlacik,
Yu. G. Kusrayev,
A. A. Golovatenko,
S. Shendre,
S. Delikanli,
H. V. Demir,
M. Bayer
Abstract:
Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the localized spins of the magnetic ions can be used for probing. Here, we study core/shell CdSe/(Cd,Mn)S colloidal nanoplatelets hosting diluted magnetic semiconduc…
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Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the localized spins of the magnetic ions can be used for probing. Here, we study core/shell CdSe/(Cd,Mn)S colloidal nanoplatelets hosting diluted magnetic semiconductor layers. The inclusion of the magnetic Mn$^{2+}$ ions is evidenced by three magneto-optical techniques using high magnetic fields up to 15 T: polarized photoluminescence, optically detected magnetic resonance, and spin-flip Raman scattering. In particular, information on the Mn$^{2+}$ concentration in the CdS shell layers can be obtained from the spin-lattice relaxation dynamics of the Mn$^{2+}$ spin system.
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Submitted 13 May, 2020;
originally announced May 2020.
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Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure
Authors:
O. S. Ken,
E. A. Zhukov,
I. A. Akimov,
V. L. Korenev,
N. E. Kopteva,
I. V. Kalitukha,
V. F. Sapega,
A. D. Wieck,
A. Ludwig,
R. Schott,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the…
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The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons.
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Submitted 18 March, 2020;
originally announced March 2020.
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Spin beats in the photoluminescence polarization dynamics of charged excitons in InP/(In,Ga)P quantum dots in presence of nuclear quadrupole interaction
Authors:
S. V. Nekrasov,
I. A. Akimov,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
The spin dynamics of positively (X$^{+}$) and negatively (X$^{-}$) charged excitons in InP/In$_{0.48}$Ga$_{0.52}$P quantum dots subject to a magnetic field is studied. We find that a characteristic feature of the system under study is the presence of nuclear quadrupole interaction, which leads to stabilization of the nuclear and electron spins in a quantum dot in zero external magnetic field. In d…
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The spin dynamics of positively (X$^{+}$) and negatively (X$^{-}$) charged excitons in InP/In$_{0.48}$Ga$_{0.52}$P quantum dots subject to a magnetic field is studied. We find that a characteristic feature of the system under study is the presence of nuclear quadrupole interaction, which leads to stabilization of the nuclear and electron spins in a quantum dot in zero external magnetic field. In detail, the nuclear quadrupole interaction leads to pinning of the Overhauser field along the quadrupole axis, which is close to the growth axis of the heterostructure. The nuclear effects are observed only when resident electrons are confined in the quantum dots, i.e. for X$^{-}$ trion photoexcitation. The presence of X$^{-}$ and X$^{+}$ trion contributions to the photoluminescence together with the quadrupole interaction significantly affects the dynamics of optical orientation in Voigt magnetic field. In absence of dynamic nuclear spin polarization the time evolution of the photoluminescence polarization was fitted by a form which describes the electron spin relaxation in "frozen" nuclear field fluctuations. In relatively large external magnetic fields exceeding 60 mT good agreement between theory and experiment is achieved.
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Submitted 12 August, 2019;
originally announced August 2019.
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Optical orientation and alignment of excitons in direct and indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment
Authors:
J. Rautert,
T. S. Shamirzaev,
S. V. Nekrasov,
D. R. Yakovlev,
P. Klenovský,
Yu. G. Kusrayev,
M. Bayer
Abstract:
The spin structure and spin dynamics of excitons in an ensemble of (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment, containing both direct and indirect band gap dots, are studied. Time-resolved and spectral selective techniques are used to distinguish between the direct and indirect QDs. The exciton fine structure is studied by means of optical alignment and optical orientation techni…
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The spin structure and spin dynamics of excitons in an ensemble of (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment, containing both direct and indirect band gap dots, are studied. Time-resolved and spectral selective techniques are used to distinguish between the direct and indirect QDs. The exciton fine structure is studied by means of optical alignment and optical orientation techniques in magnetic fields applied in the Faraday or Voigt geometries. A drastic difference in emission polarization is found for the excitons in the direct QDs involving a $Γ$-valley electron and the excitons in the indirect QDs contributed by an $X$-valley electron. We show that in the direct QDs the exciton spin dynamics is controlled by the anisotropic exchange splitting, while in the indirect QDs it is determined by the hyperfine interaction with nuclear field fluctuations. The anisotropic exchange splitting is determined for the direct QD excitons and compared with model calculations.
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Submitted 18 April, 2019; v1 submitted 4 April, 2019;
originally announced April 2019.
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Voltage control of the long-range p-d exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure
Authors:
V. L. Korenev,
I. V. Kalitukha,
I. A. Akimov,
V. F. Sapega,
E. A. Zhukov,
E. Kirstein,
O. S. Ken,
D. Kudlacik,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
N. D. Ilyinskaya,
N. M. Lebedeva,
T. A. Komissarova,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive c…
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Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive candidates in that respect as such systems bring together the properties of the isolated constituents: They are expected to show magnetic order as a ferromagnet and to be electrically tunable as a semiconductor. Here we demonstrate the electrical control of the exchange coupling in a hybrid consisting of a ferromagnetic Co layer and a semiconductor CdTe quantum well, separated by a thin non-magnetic (Cd,Mg)Te barrier. The effective magnetic field of the exchange interaction reaches up to 2.5 Tesla and can be turned on and off by application of 1 V bias across the heterostructure. The mechanism of this electric field control is essentially different from the conventional concept, in which wavefunctions are spatially redistributed to vary the exchange interaction, requiring high field strengths. Here we address instead control of the novel exchange mechanism that is mediated by elliptically polarized phonons emitted from the ferromagnet, i.e. the phononic ac Stark effect. An essential parameter of this coupling is the splitting between heavy and light hole states in the quantum well which can be varied by the electric field induced band bending. Thereby the splitting can be tuned with respect to the magnon-phonon resonance energy in the ferromagnet, leading to maximum coupling for flat band conditions. Our results demonstrate the feasibility of electrically controlled exchange coupling in hybrid semiconductor nanostructures at quite moderate electric field strengths.
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Submitted 23 December, 2018;
originally announced December 2018.
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Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals
Authors:
M. O. Nestoklon,
S. V. Goupalov,
R. I. Dzhioev,
O. S. Ken,
V. L. Korenev,
Yu. G. Kusrayev,
V. F. Sapega,
C. de Weerd,
L. Gomez,
T. Gregorkiewicz,
Junhao Lin,
Kazutomo Suenaga,
Yasufumi Fujiwara,
L. B. Matyushkin,
I. N. Yassievich
Abstract:
We demonstrate the optical orientation and alignment of excitons in a two-dimensional layer of CsPbI$_3$ perovskite nanocrystals prepared by colloidal synthesis and measure the anisotropic exchange splitting of exciton levels in the nanocrystals. From the experimental data at low temperature (2K), we obtain the average value of anisotropic splitting of bright exciton states of the order of 120μeV.…
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We demonstrate the optical orientation and alignment of excitons in a two-dimensional layer of CsPbI$_3$ perovskite nanocrystals prepared by colloidal synthesis and measure the anisotropic exchange splitting of exciton levels in the nanocrystals. From the experimental data at low temperature (2K), we obtain the average value of anisotropic splitting of bright exciton states of the order of 120μeV. Our calculations demonstrate that there is a significant contribution to the splitting due to the nanocrystal shape anisotropy for all inorganic perovskite nanocrystrals.
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Submitted 2 February, 2018;
originally announced February 2018.
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Electron and hole g-factors and spin dynamics of negatively charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells
Authors:
Elena V. Shornikova,
Louis Biadala,
Dmitri R. Yakovlev,
Donghai H. Feng,
Victor F. Sapega,
Nathan Flipo,
Aleksandr A. Golovatenko,
Marina A. Semina,
Anna V. Rodina,
Anatolie A. Mitioglu,
Mariana V. Ballottin,
Peter C. M. Christianen,
Yuri G. Kusrayev,
Michel Nasilowski,
Benoit Dubertret,
Manfred Bayer
Abstract:
We address spin properties and spin dynamics of carriers and charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells. Magneto-optical studies are performed by time-resolved and polarization-resolved photoluminescence, spin-flip Raman scattering and picosecond pump-probe Faraday rotation in magnetic fields up to 30 T. We show that at low temperatures the nanoplatelets are negatively…
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We address spin properties and spin dynamics of carriers and charged excitons in CdSe/CdS colloidal nanoplatelets with thick shells. Magneto-optical studies are performed by time-resolved and polarization-resolved photoluminescence, spin-flip Raman scattering and picosecond pump-probe Faraday rotation in magnetic fields up to 30 T. We show that at low temperatures the nanoplatelets are negatively charged so that their photoluminescence is dominated by radiative recombination of negatively charged excitons (trions). Electron g-factor of 1.68 is measured and heavy-hole g-factor varying with increasing magnetic field from -0.4 to -0.7 is evaluated. Hole g-factors for two-dimensional structures are calculated for various hole confining potentials for cubic- and wurtzite lattice in CdSe core. These calculations are extended for various quantum dots and nanoplatelets based on II-VI semiconductors. We developed a magneto-optical technique for the quantitative evaluation of the nanoplatelets orientation in ensemble.
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Submitted 2 October, 2017;
originally announced October 2017.
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Addressing the exciton fine structure in colloidal nanocrystals: the case of CdSe nanoplatelets
Authors:
Elena V. Shornikova,
Louis Biadala,
Dmitri R. Yakovlev,
Victor F. Sapega,
Yuri G. Kusrayev,
Anatolie A. Mitioglu,
Mariana V. Ballottin,
Peter C. M. Christianen,
Vasilii V. Belykh,
Mikhail V. Kochiev,
Nikolai N. Sibeldin,
Aleksandr A. Golovatenko,
Anna V. Rodina,
Nikolay A. Gippius,
Alexis Kuntzmann,
Ye Jiang,
Michel Nasilowski,
Benoit Dubertret,
Manfred Bayer
Abstract:
We study the band-edge exciton fine structure and in particular its bright-dark splitting in colloidal semiconductor nanocrystals by four different optical methods based on fluorescence line narrowing and time-resolved measurements at various temperatures down to 2 K. We demonstrate that all these methods provide consistent splitting values and discuss their advances and limitations. Colloidal CdS…
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We study the band-edge exciton fine structure and in particular its bright-dark splitting in colloidal semiconductor nanocrystals by four different optical methods based on fluorescence line narrowing and time-resolved measurements at various temperatures down to 2 K. We demonstrate that all these methods provide consistent splitting values and discuss their advances and limitations. Colloidal CdSe nanoplatelets with thicknesses of 3, 4 and 5 monolayers are chosen for experimental demonstrations. The bright-dark splitting of excitons varies from 3.2 to 6.0 meV and is inversely proportional to the nanoplatelet thickness. Good agreement between experimental and theoretically calculated size dependence of the bright-dark exciton slitting is achieved. The recombination rates of the bright and dark excitons and the bright to dark relaxation rate are measured by time-resolved techniques.
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Submitted 28 September, 2017; v1 submitted 27 September, 2017;
originally announced September 2017.
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Long-range p-d exchange interaction in a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure
Authors:
I. A. Akimov,
M. Salewski,
I. V. Kalitukha,
S. V. Poltavtsev,
J. Debus,
D. Kudlacik,
V. F. Sapega,
N. E. Kopteva,
E. Kirstein,
E. A. Zhukov,
D. R. Yakovlev,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
V. L. Korenev,
Yu. G. Kusrayev,
M. Bayer
Abstract:
The exchange interaction between magnetic ions and charge carriers in semiconductors is considered as prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range $p-d$ exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10~nm thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier…
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The exchange interaction between magnetic ions and charge carriers in semiconductors is considered as prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range $p-d$ exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10~nm thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier with a thickness on the order of 10~nm. The exchange interaction is manifested by the spin splitting of acceptor bound holes in the effective magnetic field induced by the FM. The exchange splitting is directly evaluated using spin-flip Raman scattering by analyzing the dependence of the Stokes shift $Δ_S$ on the external magnetic field $B$. We show that in strong magnetic field $Δ_S$ is a linear function of $B$ with an offset of $Δ_{pd} = 50-100~μ$eV at zero field from the FM induced effective exchange field. On the other hand, the $s-d$ exchange interaction between conduction band electrons and FM, as well as the $p-d$ contribution for free valence band holes, are negligible. The results are well described by the model of indirect exchange interaction between acceptor bound holes in the CdTe quantum well and the FM layer mediated by elliptically polarized phonons in the hybrid structure.
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Submitted 17 August, 2017;
originally announced August 2017.
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Dynamics of exciton magnetic polarons in CdMnSe/CdMgSe quantum wells: the effect of self-localization
Authors:
I. A. Akimov,
T. Godde,
K. V. Kavokin,
D. R. Yakovlev,
I. I. Reshina,
I. V. Sedova,
S. V. Sorokin,
S. V. Ivanov,
Yu. G. Kusrayev,
M. Bayer
Abstract:
We study the exciton magnetic polaron (EMP) formation in (Cd,Mn)Se/(Cd,Mg)Se diluted-magnetic-semiconductor quantum wells using time-resolved photoluminescence (PL). The magnetic field and temperature dependencies of this dynamics allow us to separate the non-magnetic and magnetic contributions to the exciton localization. We deduce the EMP energy of 14 meV, which is in agreement with time-integra…
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We study the exciton magnetic polaron (EMP) formation in (Cd,Mn)Se/(Cd,Mg)Se diluted-magnetic-semiconductor quantum wells using time-resolved photoluminescence (PL). The magnetic field and temperature dependencies of this dynamics allow us to separate the non-magnetic and magnetic contributions to the exciton localization. We deduce the EMP energy of 14 meV, which is in agreement with time-integrated measurements based on selective excitation and the magnetic field dependence of the PL circular polarization degree. The polaron formation time of 500 ps is significantly longer than the corresponding values reported earlier. We propose that this behavior is related to strong self-localization of the EMP, accompanied with a squeezing of the heavy-hole envelope wavefunction. This conclusion is also supported by the decrease of the exciton lifetime from 600 ps to 200 - 400 ps with increasing magnetic field and temperature.
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Submitted 7 January, 2017;
originally announced January 2017.
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Optical orientation of hole magnetic polarons in (Cd,Mn)Te/(Cd,Mn,Mg)Te quantum wells
Authors:
E. A. Zhukov,
Yu. G. Kusrayev,
K. V. Kavokin,
D. R. Yakovlev,
J. Debus,
A. Schwan,
I. A. Akimov,
G. Karczewski,
T. Wojtowicz,
J. Kossut,
M. Bayer
Abstract:
The optically induced spin polarization in (Cd,Mn)Te/(Cd,Mn,Mg)Te diluted-magnetic-semiconductor quantum wells is investigated by means of picosecond pump-probe Kerr rotation. At 1.8 K temperature, additionally to the oscillatory signals from photoexcited electrons and Manganese spins precessing about an external magnetic field, a surprisingly long-lived (up to 60 ns) nonoscillating spin polarizat…
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The optically induced spin polarization in (Cd,Mn)Te/(Cd,Mn,Mg)Te diluted-magnetic-semiconductor quantum wells is investigated by means of picosecond pump-probe Kerr rotation. At 1.8 K temperature, additionally to the oscillatory signals from photoexcited electrons and Manganese spins precessing about an external magnetic field, a surprisingly long-lived (up to 60 ns) nonoscillating spin polarization is detected. This polarization is related to optical orientation of equilibrium magnetic polarons involving resident holes. The suggested mechanism for the optical orientation of the equilibrium magnetic polarons indicates that the detected polaron dynamics originates from unexcited magnetic polarons. The polaron spin dynamics is controlled by the anisotropic spin structure of the heavy-hole resulting in a freezing of the polaron magnetic moment in one of the two stable states oriented along the structure growth axis. Spin relaxation between these states is prohibited by a potential barrier, which depends on temperature and magnetic field. The magnetic polaron relaxation is accelerated with increasing temperature and in magnetic field.
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Submitted 11 May, 2016;
originally announced May 2016.
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Förster energy transfer of dark excitons enhanced by a magnetic field in an ensemble of CdTe colloidal nanocrystals
Authors:
Feng Liu,
A. V. Rodina,
D. R. Yakovlev,
A. A. Golovatenko,
A. Greilich,
E. D. Vakhtin,
A. Susha,
A. L. Rogach,
Yu. G. Kusrayev,
M. Bayer
Abstract:
We present a systematic experimental study along with theoretical modeling of the energy transfer in an ensemble of closely-packed CdTe colloidal nanocrystals identified as the Förster resonant energy transfer (FRET). We prove that at low temperature of 4.2 K, mainly the ground dark exciton states in the initially excited small-size (donor) nanocrystals participate in the dipole-dipole FRET leadin…
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We present a systematic experimental study along with theoretical modeling of the energy transfer in an ensemble of closely-packed CdTe colloidal nanocrystals identified as the Förster resonant energy transfer (FRET). We prove that at low temperature of 4.2 K, mainly the ground dark exciton states in the initially excited small-size (donor) nanocrystals participate in the dipole-dipole FRET leading to additional excitation of the large-size (acceptor) nanocrystals. The FRET becomes possible due to the weak admixture of the bright exciton states to the dark states. The admixture takes place even in zero magnetic field and allows the radiative recombination of the dark excitons. An external magnetic field considerably enhances this admixture, thus increasing the energy transfer rate by a factor of 2-3 in a field of 15T, as well as the radiative rates of the dark excitons in the donor and acceptor nanocrystals. The theoretical modeling allows us to determine the spectral dependence of the probability for the NC to serve as a donor for larger nanocrystals, to evaluate the energy transfer rates as well as to predict their dependencies on the magnetic field, to describe the spectral shift of the photoluminescence maximum due to the energy transfer and to reproduce the experimentally observed spectral dependencies of the photoluminescence recombination dynamics in the magnetic field.
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Submitted 21 December, 2015;
originally announced December 2015.
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Optical spin orientation of minority holes in a modulation-doped GaAs/(Ga,Al)As quantum well
Authors:
A. V. Koudinov,
R. I. Dzhioev,
V. L. Korenev,
V. F. Sapega,
Yu. G. Kusrayev
Abstract:
The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and polarization of the photoluminescence in a magnetic field are well described in a model whose main elements are resonant absorption of the exciting light by the Landau…
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The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and polarization of the photoluminescence in a magnetic field are well described in a model whose main elements are resonant absorption of the exciting light by the Landau levels and mixing of the heavy- and light-hole subbands. After subtraction of these effects, the observed influence of magnetic fields on the spin polarization can be well interpreted by a standard approach of the optical orientation method. The spin relaxation of holes is controlled by the Dyakonov-Perel' mechanism. Deceleration of the spin relaxation by the magnetic field occurs through the Ivchenko mechanism - due to the cyclotron motion of holes. Mobility of holes was found to be two orders of magnitude smaller than that of electrons, being determined by the scattering of holes upon the electron gas.
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Submitted 18 December, 2015;
originally announced December 2015.
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Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure
Authors:
V. L. Korenev,
M. Salewski,
I. A. Akimov,
V. F. Sapega,
L. Langer,
I. V. Kalitukha,
J. Debus,
R. I. Dzhioev,
D. R. Yakovlev,
D. Mueller,
C. Schroeder,
H. Hoevel,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
Yu. G. Kusrayev,
M. Bayer
Abstract:
Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be impl…
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Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wave function overlap and is therefore short-ranged, so that it may be compromised across the interface. Here we study a hybrid structure consisting of a ferromagnetic Co-layer and a semiconducting CdTe quantum well, separated by a thin (Cd,Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wave function overlap of quantum well holes and magnetic Co atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 10 nm. We suggest that the resulting spin polarization of the holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.
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Submitted 18 March, 2015;
originally announced March 2015.
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Exciton spin dynamics of colloidal CdTe nanocrystals in magnetic field
Authors:
Feng Liu,
A. V. Rodina,
D. R. Yakovlev,
A. Greilich,
A. A. Golovatenko,
A. S. Susha,
A. L. Rogach,
Yu. G. Kusrayev,
M. Bayer
Abstract:
The recombination and spin dynamics of excitons in colloidal CdTe nanocrystals (NCs) are studied by time-resolved photoluminescence in high magnetic fields up to 15 T and at cryogenic temperatures. The recombination decay shows a nonexponential temporal behavior, with the longest component corresponding to the dark excitons having 260 ns decay time at zero magnetic field and 4.2 K temperature. Thi…
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The recombination and spin dynamics of excitons in colloidal CdTe nanocrystals (NCs) are studied by time-resolved photoluminescence in high magnetic fields up to 15 T and at cryogenic temperatures. The recombination decay shows a nonexponential temporal behavior, with the longest component corresponding to the dark excitons having 260 ns decay time at zero magnetic field and 4.2 K temperature. This long component shortens to 150 ns at 15 T due to the magnetic-field-induced mixing of the bright and dark exciton states. The spin dynamics, assessed through the evolution of the magnetic-field-induced circular polarization degree of the photoluminescence, has a fast component shorter than 1 ns related to the bright excitons and a slow component of 5-10 ns associated with the dark excitons. The latter shortens with increasing magnetic field, which is characteristic for a phonon-assisted spin relaxation mechanism. The relatively low saturation level of the associated magnetic-field-induced circular polarization degree of -30 % is explained by a model that suggests the CdTe NCs to constitute an ensemble of prolate and oblate NCs, both having a structural quantization axis. The exciton g-factor of 2.4-2.9 evaluated from fitting the experimental data in the frame of the suggested approach is in good agreement with the expected value for the dark excitons in CdTe NCs.
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Submitted 20 December, 2013;
originally announced December 2013.
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Optical orientation of Mn^2+ ions in GaAs
Authors:
I. A. Akimov,
R. I. Dzhioev,
V. L. Korenev,
Yu. G. Kusrayev,
V. F. Sapega,
D. R. Yakovlev,
M. Bayer
Abstract:
We report on optical orientation of Mn^2+ in bulk GaAs under application of weak longitudinal magnetic field (B <= 100 mT). The manganese spin polarization of 25% is directly evaluated using spin flip Raman scattering spectroscopy. The dynamical polarization of Mn^2+ occurs due to s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence uncovers n…
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We report on optical orientation of Mn^2+ in bulk GaAs under application of weak longitudinal magnetic field (B <= 100 mT). The manganese spin polarization of 25% is directly evaluated using spin flip Raman scattering spectroscopy. The dynamical polarization of Mn^2+ occurs due to s-d exchange interaction with optically oriented conduction band electrons. Time-resolved photoluminescence uncovers nontrivial electron spin dynamics where the oriented Mn^2+ ions tend to stabilize the electron spin.
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Submitted 7 October, 2010;
originally announced October 2010.
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Long-lived spin memory in Mn-doped GaAs: Time resolved study
Authors:
I. A. Akimov,
R. I. Dzhioev,
V. L. Korenev,
Yu. G. Kusrayev,
E. A. Zhukov,
D. R. Yakovlev,
M. Bayer
Abstract:
We study the electron spin dynamics in p-type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin relaxation time of 20 ns that can be uniquely related to electrons. Application of weak longitudinal magnetic fields above 100 mT extends the spin relaxation times up to microseconds…
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We study the electron spin dynamics in p-type GaAs doped with magnetic Mn acceptors by means of time-resolved pump-probe and photoluminescence techniques. Measurements in transverse magnetic fields show a long spin relaxation time of 20 ns that can be uniquely related to electrons. Application of weak longitudinal magnetic fields above 100 mT extends the spin relaxation times up to microseconds which is explained by suppression of the Bir-Aronov-Pikus spin relaxation for the electron on the Mn acceptor.
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Submitted 16 July, 2009;
originally announced July 2009.
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Two-step model versus one-step model of the inter-polarization conversion and statistics of CdSe/ZnSe quantum dot elongations
Authors:
A. V. Koudinov,
B. R. Namozov,
Yu. G. Kusrayev,
S. Lee,
M. Dobrowolska,
J. K. Furdyna
Abstract:
The magneto-optical inter-polarization conversions by a layer of quantum dots have been investigated. Various types of polarization response of the sample were observed as a function of external magnetic field and of the orientation of the sample. The full set of experimental dependences is analyzed in terms of a one-step and a two-step model of spin evolution. The angular distribution of the qu…
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The magneto-optical inter-polarization conversions by a layer of quantum dots have been investigated. Various types of polarization response of the sample were observed as a function of external magnetic field and of the orientation of the sample. The full set of experimental dependences is analyzed in terms of a one-step and a two-step model of spin evolution. The angular distribution of the quantum dots over the directions of elongation in the plane of the sample is taken into account in terms of the two models, and the model predictions are compared with experimental observations.
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Submitted 8 April, 2008; v1 submitted 31 March, 2008;
originally announced March 2008.
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Suppression of electron spin relaxation in Mn-doped GaAs
Authors:
G. V. Astakhov,
R. I. Dzhioev,
K. V. Kavokin,
V. L. Korenev,
M. V. Lazarev,
M. N. Tkachuk,
Yu. G. Kusrayev,
T. Kiessling,
W. Ossau,
L. W. Molenkamp
Abstract:
We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter the a…
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We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory.
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Submitted 1 October, 2007;
originally announced October 2007.
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Bound magnetic polarons in the very dilute regime
Authors:
Yu. G. Kusrayev,
K. V. Kavokin,
G. V. Astakhov,
W. Ossau,
L. W. Molenkamp
Abstract:
We study bound magnetic polarons (BMP) in a very diluted magnetic semiconductor CdMnTe by means of site selective spectroscopy. In zero magnetic field we detect a broad and asymmetric band with a characteristic spectral width of about 5 meV. When external magnetic fields are applied a new line appears in the emission spectrum. Remarkably, the spectral width of this line is reduced greatly down t…
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We study bound magnetic polarons (BMP) in a very diluted magnetic semiconductor CdMnTe by means of site selective spectroscopy. In zero magnetic field we detect a broad and asymmetric band with a characteristic spectral width of about 5 meV. When external magnetic fields are applied a new line appears in the emission spectrum. Remarkably, the spectral width of this line is reduced greatly down to 0.24 meV. We attribute such unusual behavior to the formation of BMP, effected by sizable fluctuations of local magnetic moments. The modifications of the optical spectra have been simulated by the Monte-Carlo method and calculated within an approach considering the nearest Mn ion. A quantitative agreement with the experiment is achieved without use of fitting parameters. It is demonstrated that the low-energy part of the emission spectra originates from the energetic relaxation of a complex consisting of a hole and its nearest Mn ion. It is also shown that the contribution to the narrow line arises from the remote Mn ions.
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Submitted 14 September, 2007;
originally announced September 2007.
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Exciton spin decay modified by strong electron-hole exchange interaction
Authors:
G. V. Astakhov,
A. V. Koudinov,
K. V. Kavokin,
I. S. Gagis,
Yu. G. Kusrayev,
W. Ossau,
L. W. Molenkamp,
G. Karczewski,
T. Wojtowicz,
J. Kossut
Abstract:
We study exciton spin decay in the regime of strong electron-hole exchange interaction. In this regime the electron spin precession is restricted within a sector formed by the external magnetic field and the effective exchange fields triggered by random spin flips of the hole. Using Hanle effect measurements, we demonstrate that this mechanism dominates our experiments in CdTe/(Cd,Mg)Te quantum…
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We study exciton spin decay in the regime of strong electron-hole exchange interaction. In this regime the electron spin precession is restricted within a sector formed by the external magnetic field and the effective exchange fields triggered by random spin flips of the hole. Using Hanle effect measurements, we demonstrate that this mechanism dominates our experiments in CdTe/(Cd,Mg)Te quantum wells. The calculations provide a consistent description of the experimental results, which is supported by independent measurements of the parameters entering the model.
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Submitted 19 September, 2006;
originally announced September 2006.
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Linear polarization of the photoluminescence of quantum wells
Authors:
A. V. Koudinov,
N. S. Averkiev,
Yu. G. Kusrayev,
B. R. Namozov,
B. P. Zakharchenya,
D. Wolverson,
J. J. Davies,
T. Wojtowicz,
G. Karczewski,
J. Kossut
Abstract:
The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of detection photon energy, applied magnetic field strength and orientation in the quantum well plane. A theoretical description of this effect in terms of an in-…
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The degree and orientation of the magnetic-field induced linear polarization of the photoluminescence from a wide range of heterostructures containing (Cd,Mn)Te quantum wells between (Cd,Mn,Mg)Te barriers has been studied as a function of detection photon energy, applied magnetic field strength and orientation in the quantum well plane. A theoretical description of this effect in terms of an in-plane deformation acting on the valence band states is presented and is verified by comparison with the experimental data. We attempted to identify clues to the microscopic origin of the valence band spin anisotropy and to the mechanisms which actually determine the linear polarization of the PL in the quantum wells subject to the in-plane magnetic field. The conclusions of the present paper apply in full measure to non-magnetic QWs as well as ensembles of disk-like QDs with shape and/or strain anisotropy.
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Submitted 10 January, 2006;
originally announced January 2006.
