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Spin relaxation of localized electrons in monolayer MoSe$_2$: importance of random effective magnetic fields
Authors:
Eyüp Yalcin,
Ina V. Kalitukha,
Ilya A. Akimov,
Vladimir L. Korenev,
Olga S. Ken,
Jorge Puebla,
Yoshichika Otani,
Oscar M. Hutchings,
Daniel J. Gillard,
Alexander I. Tartakovskii,
Manfred Bayer
Abstract:
We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin inte…
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We study the Hanle and spin polarization recovery effects on resident electrons in a monolayer MoSe$_2$ on EuS. We demonstrate that localized electrons provide the main contribution to the spin dynamics signal at low temperatures below 15~K for small magnetic fields of only a few mT. The spin relaxation of these electrons is determined by random effective magnetic fields due to a contact spin interaction, namely the hyperfine interaction with the nuclei in MoSe$_2$ or the exchange interaction with the magnetic ions of the EuS film. From the magnetic field angular dependence of the spin polarization we evaluate the anisotropy of the intervalley electron $g$-factor and the spin relaxation time. The non-zero in-plane $g$-factor $|g_x|\approx 0.1$, the value of which is comparable to its dispersion, is attributed to randomly localized electrons in the MoSe$_2$ layer.
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Submitted 1 July, 2024;
originally announced July 2024.
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Optically induced spin electromotive force in ferromagnetic-semiconductor quantum well structure
Authors:
Igor V. Rozhansky,
Ina V. Kalitukha,
Grigorii S. Dimitriev,
Olga S. Ken,
Mikhail V. Dorokhin,
Boris N. Zvonkov,
Dmitri S. Arteev,
Nikita S. Averkiev,
Vladimir L. Korenev
Abstract:
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few nanometer thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurement…
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Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few nanometer thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurements and photoluminescence detection provides a powerful tool for studying the properties of such hybrid structures and allows to resolve the dynamic FM proximity effect on a nanometer scale. The method can be generalized on various systems including rapidly developing 2D van der Waals materials.
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Submitted 17 April, 2023;
originally announced April 2023.
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Weak dispersion of exciton Landé factor with band gap energy in lead halide perovskites: Approximate compensation of the electron and hole dependences
Authors:
N. E. Kopteva,
D. R. Yakovlev,
E. Kirstein,
E. A. Zhukov,
D. Kudlacik,
I. V. Kalitukha,
V. F. Sapega,
D. N. Dirin,
M. V. Kovalenko,
A. Baumann,
J. Höcker,
V. Dyakonov,
S. A. Crooker,
M. Bayer
Abstract:
The photovoltaic and optoelectronic properties of lead halide perovskite semiconductors are controlled by excitons, so that investigation of their fundamental properties is of critical importance. The exciton Landé or g-factor g_X is the key parameter, determining the exciton Zeeman spin splitting in magnetic fields. The exciton, electron and hole carrier g-factors provide information on the band…
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The photovoltaic and optoelectronic properties of lead halide perovskite semiconductors are controlled by excitons, so that investigation of their fundamental properties is of critical importance. The exciton Landé or g-factor g_X is the key parameter, determining the exciton Zeeman spin splitting in magnetic fields. The exciton, electron and hole carrier g-factors provide information on the band structure, including its anisotropy, and the parameters contributing to the electron and hole effective masses. We measure g_X by reflectivity in magnetic fields up to 60 T for lead halide perovskite crystals. The materials band gap energies at a liquid helium temperature vary widely across the visible spectral range from 1.520 up to 3.213 eV in hybrid organic-inorganic and fully inorganic perovskites with different cations and halogens: FA_{0.9}Cs_{0.1}PbI_{2.8}Br_{0.2], MAPbI_{3}, FAPbBr_{3}, CsPbBr_{3}, and MAPb(Br_{0.05}Cl_{0.95})_{3}. We find the exciton g-factors to be nearly constant, ranging from +2.3 to +2.7. Thus, the strong dependences of the electron and hole g-factors on the band gap roughly compensate each other when combining to the exciton g-factor. The same is true for the anisotropies of the carrier g-factors, resulting in a nearly isotropic exciton g-factor. The experimental data are compared favorably with model calculation results.
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Submitted 30 January, 2023;
originally announced January 2023.
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Optical alignment and orientation of excitons in ensemble of core/shell CdSe/CdS colloidal nanoplatelets
Authors:
O. O. Smirnova,
I. V. Kalitukha,
A. V. Rodina,
G. S. Dimitriev,
V. F. Sapega,
O. S. Ken,
V. L. Korenev,
N. V. Kozyrev,
S. V. Nekrasov,
Yu. G. Kusrayev,
D. R. Yakovlev,
B. Dubertret,
M. Bayer
Abstract:
We report on the experimental and theoretical studies of optical alignment and optical orientation effects in an ensemble of core/shell CdSe/CdS colloidal nanoplatelets. The dependences of three Stokes parameters on the magnetic field applied in the Faraday geometry are measured under continuous wave resonant excitation of the exciton photoluminescence. Theoretical model is developed to take into…
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We report on the experimental and theoretical studies of optical alignment and optical orientation effects in an ensemble of core/shell CdSe/CdS colloidal nanoplatelets. The dependences of three Stokes parameters on the magnetic field applied in the Faraday geometry are measured under continuous wave resonant excitation of the exciton photoluminescence. Theoretical model is developed to take into account both bright and dark exciton states in the case of strong electron and hole exchange interaction and random in-plane orientation of the nanoplatelets in ensemble. The data analysis allows us to estimate the time and energy parameters of the bright and dark excitons. The optical alignment effect enables identification of the exciton and trion contributions to the photoluminescence spectrum even in the absence of a clear spectral line resolution.
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Submitted 12 December, 2022;
originally announced December 2022.
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The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap
Authors:
E. Kirstein,
D. R. Yakovlev,
M. M. Glazov,
E. A. Zhukov,
D. Kudlacik,
I. V. Kalitukha,
V. F. Sapega,
G. S. Dimitriev,
M. A. Semina,
M. O. Nestoklon,
E. L. Ivchenko,
N. E. Kopteva,
D. N. Dirin,
O. Nazarenko,
M. V. Kovalenko,
A. Baumann,
J. Höcker,
V. Dyakonov,
M. Bayer
Abstract:
The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)…
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The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.
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Submitted 31 December, 2021;
originally announced December 2021.
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Polarized emission of CdSe nanocrystals in magnetic field: the role of phonon-assisted recombination of the dark exciton
Authors:
Gang Qiang,
Aleksandr A. Golovatenko,
Elena V. Shornikova,
Dmitri R. Yakovlev,
Anna V. Rodina,
Evgeny A. Zhukov,
Ina V. Kalitukha,
Victor F. Sapega,
Vadim K. Kaibyshev,
Mikhail A. Prosnikov,
Peter C. M. Christianen,
Aleksei A. Onushchenko,
Manfred Bayer
Abstract:
The recombination dynamics and spin polarization of excitons in CdSe nanocrystals synthesized in a glass matrix are investigated using polarized photoluminescence in high magnetic fields up to 30 Tesla. The dynamics are accelerated by increasing temperature and magnetic field, confirming the dark exciton nature of the low-temperature photoluminescence (PL). The circularly polarized PL in magnetic…
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The recombination dynamics and spin polarization of excitons in CdSe nanocrystals synthesized in a glass matrix are investigated using polarized photoluminescence in high magnetic fields up to 30 Tesla. The dynamics are accelerated by increasing temperature and magnetic field, confirming the dark exciton nature of the low-temperature photoluminescence (PL). The circularly polarized PL in magnetic fields reveals several unusual appearances: (i) a spectral dependence of the polarization degree, (ii) its low saturation value, and (iii) a stronger intensity of the Zeeman component which is higher in energy. The latter feature is the most surprising being in contradiction with the thermal population of the exciton spin sublevels. The same contradiction was previously observed in the ensemble of wet-chemically synthesized CdSe nanocrystals, but was not understood. We present a theory which explains all the observed features and shows that the inverted ordering of the circular polarized PL maxima from the ensemble of nanocrystals is a result of competition between the zero phonon (ZPL) and one optical phonon (1PL) assisted emission of the dark excitons. The essential aspects of the theoretical model are different polarization properties of the dark exciton emission via ZPL and 1PL recombination channels and the inhomogeneous broadening of the PL spectrum from the ensemble of nanocrystals exceeding the optical phonon energy.
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Submitted 5 November, 2020;
originally announced November 2020.
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Magneto-optics of excitons interacting with magnetic ions in CdSe/CdMnS colloidal nanoplatelets
Authors:
E. V. Shornikova,
D. R. Yakovlev,
D. O. Tolmachev,
V. Yu. Ivanov,
I. V. Kalitukha,
V. F. Sapega,
D. Kudlacik,
Yu. G. Kusrayev,
A. A. Golovatenko,
S. Shendre,
S. Delikanli,
H. V. Demir,
M. Bayer
Abstract:
Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the localized spins of the magnetic ions can be used for probing. Here, we study core/shell CdSe/(Cd,Mn)S colloidal nanoplatelets hosting diluted magnetic semiconduc…
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Excitons in diluted magnetic semiconductors represent excellent probes for studying the magnetic properties of these materials. Various magneto-optical effects, which depend sensitively on the exchange interaction of the excitons with the localized spins of the magnetic ions can be used for probing. Here, we study core/shell CdSe/(Cd,Mn)S colloidal nanoplatelets hosting diluted magnetic semiconductor layers. The inclusion of the magnetic Mn$^{2+}$ ions is evidenced by three magneto-optical techniques using high magnetic fields up to 15 T: polarized photoluminescence, optically detected magnetic resonance, and spin-flip Raman scattering. In particular, information on the Mn$^{2+}$ concentration in the CdS shell layers can be obtained from the spin-lattice relaxation dynamics of the Mn$^{2+}$ spin system.
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Submitted 13 May, 2020;
originally announced May 2020.
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Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure
Authors:
O. S. Ken,
E. A. Zhukov,
I. A. Akimov,
V. L. Korenev,
N. E. Kopteva,
I. V. Kalitukha,
V. F. Sapega,
A. D. Wieck,
A. Ludwig,
R. Schott,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the…
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The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons.
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Submitted 18 March, 2020;
originally announced March 2020.
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Single and double electron spin-flip Raman scattering in CdSe colloidal nanoplatelets
Authors:
Dennis Kudlacik,
Victor F. Sapega,
Dmitri R. Yakovlev,
Ina V. Kalitukha,
Elena V. Shornikova,
Anna V. Rodina,
Eugeniius L. Ivchenko,
Grigorii S. Dimitriev,
Michel Nasilowski,
Benoit Dubertret,
Manfred Bayer
Abstract:
CdSe colloidal nanoplatelets are studied by spin-flip Raman scattering in magnetic fields up to 5 T. We find pronounced Raman lines shifted from the excitation laser energy by an electron Zeeman splitting. Their polarization selection rules correspond to those expected for scattering mediated by excitons interacting with resident electrons. Surprisingly, Raman signals shifted by twice the electron…
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CdSe colloidal nanoplatelets are studied by spin-flip Raman scattering in magnetic fields up to 5 T. We find pronounced Raman lines shifted from the excitation laser energy by an electron Zeeman splitting. Their polarization selection rules correspond to those expected for scattering mediated by excitons interacting with resident electrons. Surprisingly, Raman signals shifted by twice the electron Zeeman splitting are also observed. The theoretical analysis and experimental dependencies show that the mechanism responsible for the double flip involves two resident electrons interacting with a photoexcited exciton. Effects related to various orientations of the nanoplatelets in the ensemble and different orientations of the magnetic field are analyzed.
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Submitted 5 November, 2019;
originally announced November 2019.
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Voltage control of the long-range p-d exchange coupling in a ferromagnet-semiconductor quantum well hybrid structure
Authors:
V. L. Korenev,
I. V. Kalitukha,
I. A. Akimov,
V. F. Sapega,
E. A. Zhukov,
E. Kirstein,
O. S. Ken,
D. Kudlacik,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
N. D. Ilyinskaya,
N. M. Lebedeva,
T. A. Komissarova,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive c…
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Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable reversibility and compatibility with semiconductor technology. Hybrid structures based on the assembly of ferromagnetic and semiconducting building blocks are attractive candidates in that respect as such systems bring together the properties of the isolated constituents: They are expected to show magnetic order as a ferromagnet and to be electrically tunable as a semiconductor. Here we demonstrate the electrical control of the exchange coupling in a hybrid consisting of a ferromagnetic Co layer and a semiconductor CdTe quantum well, separated by a thin non-magnetic (Cd,Mg)Te barrier. The effective magnetic field of the exchange interaction reaches up to 2.5 Tesla and can be turned on and off by application of 1 V bias across the heterostructure. The mechanism of this electric field control is essentially different from the conventional concept, in which wavefunctions are spatially redistributed to vary the exchange interaction, requiring high field strengths. Here we address instead control of the novel exchange mechanism that is mediated by elliptically polarized phonons emitted from the ferromagnet, i.e. the phononic ac Stark effect. An essential parameter of this coupling is the splitting between heavy and light hole states in the quantum well which can be varied by the electric field induced band bending. Thereby the splitting can be tuned with respect to the magnon-phonon resonance energy in the ferromagnet, leading to maximum coupling for flat band conditions. Our results demonstrate the feasibility of electrically controlled exchange coupling in hybrid semiconductor nanostructures at quite moderate electric field strengths.
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Submitted 23 December, 2018;
originally announced December 2018.
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Long-range p-d exchange interaction in a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure
Authors:
I. A. Akimov,
M. Salewski,
I. V. Kalitukha,
S. V. Poltavtsev,
J. Debus,
D. Kudlacik,
V. F. Sapega,
N. E. Kopteva,
E. Kirstein,
E. A. Zhukov,
D. R. Yakovlev,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
V. L. Korenev,
Yu. G. Kusrayev,
M. Bayer
Abstract:
The exchange interaction between magnetic ions and charge carriers in semiconductors is considered as prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range $p-d$ exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10~nm thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier…
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The exchange interaction between magnetic ions and charge carriers in semiconductors is considered as prime tool for spin control. Here, we solve a long-standing problem by uniquely determining the magnitude of the long-range $p-d$ exchange interaction in a ferromagnet-semiconductor (FM-SC) hybrid structure where a 10~nm thick CdTe quantum well is separated from the FM Co layer by a CdMgTe barrier with a thickness on the order of 10~nm. The exchange interaction is manifested by the spin splitting of acceptor bound holes in the effective magnetic field induced by the FM. The exchange splitting is directly evaluated using spin-flip Raman scattering by analyzing the dependence of the Stokes shift $Δ_S$ on the external magnetic field $B$. We show that in strong magnetic field $Δ_S$ is a linear function of $B$ with an offset of $Δ_{pd} = 50-100~μ$eV at zero field from the FM induced effective exchange field. On the other hand, the $s-d$ exchange interaction between conduction band electrons and FM, as well as the $p-d$ contribution for free valence band holes, are negligible. The results are well described by the model of indirect exchange interaction between acceptor bound holes in the CdTe quantum well and the FM layer mediated by elliptically polarized phonons in the hybrid structure.
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Submitted 17 August, 2017;
originally announced August 2017.
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Long-range p-d exchange interaction in a ferromagnet-semiconductor hybrid structure
Authors:
V. L. Korenev,
M. Salewski,
I. A. Akimov,
V. F. Sapega,
L. Langer,
I. V. Kalitukha,
J. Debus,
R. I. Dzhioev,
D. R. Yakovlev,
D. Mueller,
C. Schroeder,
H. Hoevel,
G. Karczewski,
M. Wiater,
T. Wojtowicz,
Yu. G. Kusrayev,
M. Bayer
Abstract:
Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be impl…
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Hybrid structures synthesized from different materials have attracted considerable attention because they may allow not only combination of the functionalities of the individual constituents but also mutual control of their properties. To obtain such a control an interaction between the components needs to be established. For coupling the magnetic properties, an exchange interaction has to be implemented which typically depends on wave function overlap and is therefore short-ranged, so that it may be compromised across the interface. Here we study a hybrid structure consisting of a ferromagnetic Co-layer and a semiconducting CdTe quantum well, separated by a thin (Cd,Mg)Te barrier. In contrast to the expected p-d exchange that decreases exponentially with the wave function overlap of quantum well holes and magnetic Co atoms, we find a long-ranged, robust coupling that does not vary with barrier width up to more than 10 nm. We suggest that the resulting spin polarization of the holes is induced by an effective p-d exchange that is mediated by elliptically polarized phonons.
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Submitted 18 March, 2015;
originally announced March 2015.