Showing 1–50 of 220 results for author: Jungwirth, T

Altermagnetism imaged and controlled down to the nanoscale

Authors: O. J. Amin, A. Dal Din, E. Golias, Y. Niu, A. Zakharov, S. C. Fromage, C. J. B. Fields, S. L. Heywood, R. B. Cousins, J. Krempasky, J. H. Dil, D. Kriegner, B. Kiraly, R. P. Campion, A. W. Rushforth, K. W. Edmonds, S. S. Dhesi, L. Šmejkal, T. Jungwirth, P. Wadley

Abstract: Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net-magnetization also imposes severe limitations on compatibility with other prominen… ▽ More Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net-magnetization also imposes severe limitations on compatibility with other prominent phases ranging from superconductors to topological insulators, as well as on spintronic device scalability. Recently, altermagnetism has been proposed as a solution to this restriction, since it shares the enabling $\cal{T}$-symmetry breaking characteristic of ferromagnetism, combined with the antiferromagnetic-like vanishing net-magnetization. To date, altermagnetic ordering has been inferred from spatially averaged probes. Here, we demonstrate nanoscale imaging and control of altermagnetic ordering ranging from nanoscale vortices to domain walls to microscale single-domain states in MnTe. We combine the $\cal{T}$-symmetry breaking sensitivity of X-ray magnetic circular dichroism with magnetic linear dichroism and photoemission electron microscopy, to achieve detailed imaging of the local altermagnetic ordering vector. A rich variety of spin configurations can be imposed using microstructure patterning or thermal cycling in magnetic fields. The demonstrated detection and control of altermagnetism paves the way for future research ranging from ultra-scalable digital and neuromorphic spintronic devices, to the interplay of altermagnetism with non-dissipative superconducting or topological phases. △ Less

Submitted 3 May, 2024; originally announced May 2024.

Comments: 17 pages, 3 figures

Anisotropic magnetoresistance in altermagnetic MnTe

Authors: Ruben Dario Gonzalez Betancourt, Jan Zubáč, Kevin Geishendorf, Philipp Ritzinger, Barbora Růžičková, Tommy Kotte, Jakub Železný, Kamil Olejník, Gunther Springholz, Bernd Büchner, Andy Thomas, Karel Výborný, Tomas Jungwirth, Helena Reichlová, Dominik Kriegner

Abstract: Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical res… ▽ More Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. △ Less

Submitted 25 April, 2024; originally announced April 2024.

Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3

Authors: Antonin Badura, Warlley H. Campos, Venkata K. Bharadwaj, Ismaïla Kounta, Lisa Michez, Matthieu Petit, Javier Rial, Miina Leiviskä, Vincent Baltz, Filip Krizek, Dominik Kriegner, Jan Zemen, Sjoerd Telkamp, Sebastian Sailler, Michaela Lammel, Rodrigo Jaeschke Ubiergo, Anna Birk Hellenes, Rafael González-Hernández, Jairo Sinova, Tomáš Jungwirth, Sebastian T. B. Goennenwein, Libor Šmejkal, Helena Reichlova

Abstract: The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the… ▽ More The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the presence of the anomalous Nernst effect possible despite the collinear spin arrangement. In this work, we investigate epitaxial Mn5Si3 thin films known to be an altermagnetic candidate. We show that the material manifests a sizable anomalous Nernst coefficient despite the small net magnetization of the films. The measured magnitudes of the anomalous Nernst coefficient reach a scale of microVolts per Kelvin. We support our magneto-thermoelectric measurements by density-functional theory calculations of the material's spin-split electronic structure, which allows for the finite Berry curvature in the reciprocal space. Furthermore, we present our calculations of the intrinsic Berry-curvature Nernst conductivity, which agree with our experimental observations. △ Less

Submitted 19 March, 2024; originally announced March 2024.

Structure, control, and dynamics of altermagnetic textures

Authors: O. Gomonay, V. P. Kravchuk, R. Jaeschke-Ubiergo, K. V. Yershov, T. Jungwirth, L. Šmejkal, J. van den Brink, J. Sinova

Abstract: We present a phenomenological theory of altermagnets, that captures their unique magnetization dynamics and allows modelling magnetic textures in this new magnetic phase. Focusing on the prototypical d-wave altermagnets, e.g. RuO$_2$, we can explain intuitively the characteristic lifted degeneracy of their magnon spectra, by the emergence of an effective sublattice-dependent anisotropic spin stiff… ▽ More We present a phenomenological theory of altermagnets, that captures their unique magnetization dynamics and allows modelling magnetic textures in this new magnetic phase. Focusing on the prototypical d-wave altermagnets, e.g. RuO$_2$, we can explain intuitively the characteristic lifted degeneracy of their magnon spectra, by the emergence of an effective sublattice-dependent anisotropic spin stiffness arising naturally from the phenomenological theory. We show that as a consequence the altermagnetic domain walls, in contrast to antiferromagnets, have a finite gradient of the magnetization, with its strength and gradient direction connected to the altermagnetic anisotropy, even for 180$^\circ$ domain walls. This gradient generates a ponderomotive force in the domain wall in the presence of a strongly inhomogeneous external magnetic field, which may be achieved through magnetic force microscopy techniques. The motion of these altermagentic domain walls is also characterized by an anisotropic Walker breakdown, with much higher speed limits of propagation than ferromagnets but lower than antiferromagnets. △ Less

Submitted 29 July, 2024; v1 submitted 15 March, 2024; originally announced March 2024.

Journal ref: npj Spintronics 2, 35 (2024)

Picosecond transfer from short-term to long-term memory in analog antiferromagnetic memory device

Authors: M. Surynek, J. Zubac, K. Olejnik, A. Farkas, F. Krizek, L. Nadvornik, P. Kubascik, F. Trojanek, R. P. Campion, V. Novak, T. Jungwirth, P. Nemec

Abstract: Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabi… ▽ More Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabilities of the human brain. In this paper, we report on experimental separation of switching-related and heat-related resistance signal dynamics in memory devices microfabricated from CuMnAs antiferromagnetic metal. We show that the memory variable multilevel resistance can be used as a long-term memory (LTM), lasting up to minutes at room temperature. In addition, ultrafast reflectivity change and heat dissipation from nanoscale-thickness CuMnAs films, taking place on picosecond to hundreds of nanoseconds time scales, can be used as a short-term memory (STM). Information about input stimuli, represented by femtosecond laser pulses, can be transferred from STM to LTM after rehearsals at picosecond to nanosecond times in these memory devices, where information can be retrieved at times up to 10^15 longer than the input pulse duration. Our results open a route towards ultra-fast low-power implementations of spiking neuron and synapse functionalities using a resistive analog antiferromagnetic memory. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Comments: 21 pages, 4 figures

Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition

Authors: M. Hajlaoui, S. W. D'Souza, L. Šmejkal, D. Kriegner, G. Krizman, T. Zakusylo, N. Olszowska, O. Caha, J. Michalička, A. Marmodoro, K. Výborný, A. Ernst, M. Cinchetti, J. Minar, T. Jungwirth, G. Springholz

Abstract: Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of the non-relativistic spin group symmetry, there has been limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a nov… ▽ More Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of the non-relativistic spin group symmetry, there has been limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a novel spin-splitting in the band structure. This study delves into the intricate relativistic electronic structure of an AM material, alpha-MnTe. Employing temperature-dependent angle-resolved photoelectron spectroscopy across the AM phase transition, we elucidate the emergence of a relativistic valence band splitting concurrent with the establishment of magnetic order. This discovery is validated through disordered local moment calculations, modeling the influence of magnetic order on the electronic structure and confirming the magnetic origin of the observed splitting. The temperature-dependent splitting is ascribed to the advent of relativistic spin-splitting resulting from the strengthening of AM order in alpha-MnTe as the temperature decreases. This sheds light on a previously unexplored facet of this intriguing material. △ Less

Submitted 14 June, 2024; v1 submitted 17 January, 2024; originally announced January 2024.

Anisotropy of the anomalous Hall effect in the altermagnet candidate Mn$_5$Si$_3$ films

Authors: Miina Leiviskä, Javier Rial, Antonín Badura, Rafael Lopes Seeger, Ismaïla Kounta, Sebastian Beckert, Dominik Kriegner, Isabelle Joumard, Eva Schmoranzerová, Jairo Sinova, Olena Gomonay, Andy Thomas, Sebastian T. B. Goennenwein, Helena Reichlová, Libor Šmejkal, Lisa Michez, Tomáš Jungwirth, Vincent Baltz

Abstract: Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rota… ▽ More Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rotations, which results in an unconventional spin-polarized band structure in the momentum space. This low symmetry of the crystal structure is expected to be reflected in the anisotropy of the anomalous Hall effect. In this work, we study the anisotropy of the anomalous Hall effect in epitaxial thin films of Mn$_5$Si$_3$, an altermagnetic candidate material. We first demonstrate a change in the relative Néel vector orientation when rotating the external field orientation through systematic changes in both the anomalous Hall effect and the anisotropic longitudinal magnetoresistance. We then show that the anomalous Hall effect in this material is anisotropic with the Néel vector orientation relative to the crystal structure and that this anisotropy requires high crystal quality and unlikely correlates with the magnetocrystalline anisotropy. Our results provide further systematic support to the case for considering epitaxial thin films of Mn$_5$Si$_3$ as an altermagnetic candidate material. △ Less

Submitted 4 January, 2024; originally announced January 2024.

P-wave magnets

Authors: Anna Birk Hellenes, Tomáš Jungwirth, Rodrigo Jaeschke-Ubiergo, Atasi Chakraborty, Jairo Sinova, Libor Šmejkal

Abstract: The p-wave Cooper-pairing instability in superfluid $^{3}$He, characterized by a parity-breaking excitation gap, is regarded as one of the most rich and complex phenomena in physics. The possibility of a counterpart unconventional p-wave ordering of interacting fermions, in which a Fermi surface spontaneously breaks the parity symmetry, has been an open problem for many decades. Here we identify t… ▽ More The p-wave Cooper-pairing instability in superfluid $^{3}$He, characterized by a parity-breaking excitation gap, is regarded as one of the most rich and complex phenomena in physics. The possibility of a counterpart unconventional p-wave ordering of interacting fermions, in which a Fermi surface spontaneously breaks the parity symmetry, has been an open problem for many decades. Here we identify the realization of the counterpart of p-wave superfluidity in magnetism. We demonstrate a strong parity-breaking and anisotropic symmetry lowering of spin-polarized and time-reversal symmetric Fermi surfaces in a representative p-wave magnet CeNiAsO. As a direct experimental signature we predict a large spontaneous anisotropy of the resistivity. Abundant and robust realizations of the unconventional p-wave magnetism can be identified from suitable non-relativistic crystal-lattice and spin symmetries, without requiring strong correlations and extreme external conditions. This opens new prospects in fields ranging from topological phenomena to spintronics. △ Less

Submitted 31 July, 2024; v1 submitted 4 September, 2023; originally announced September 2023.

Comments: 6 pages, 3 figures

Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2

Authors: Teresa Tschirner, Philipp Keßler, Ruben Dario Gonzalez Betancourt, Tommy Kotte, Dominik Kriegner, Bernd Buechner, Joseph Dufouleur, Martin Kamp, Vedran Jovic, Libor Smejkal, Jairo Sinova, Ralph Claessen, Tomas Jungwirth, Simon Moser, Helena Reichlova, Louis Veyrat

Abstract: Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in Ru… ▽ More Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in RuO$_2$ is excluded by symmetry for the Néel vector pointing along the zero-field [001] easy-axis. Guided by a symmetry analysis and ab initio calculations, a field-induced reorientation of the Néel vector from the easy-axis towards the [110] hard-axis was used to demonstrate the anomalous Hall signal in this altermagnet. We confirm the existence of an anomalous Hall effect in our RuO$_2$ thin-film samples whose set of magnetic and magneto-transport characteristics is consistent with the earlier report. By performing our measurements at extreme magnetic fields up to 68 T, we reach saturation of the anomalous Hall signal at a field $H_{\rm c} \simeq$ 55 T that was inaccessible in earlier studies, but is consistent with the expected Néel-vector reorientation field. △ Less

Submitted 1 September, 2023; originally announced September 2023.

Comments: 4 figures

Journal ref: APL Mater. 11, 101103 (2023)

Supercell Altermagnets

Authors: Rodrigo Jaeschke-Ubiergo, Venkata Krishna Bharadwaj, Tomas Jungwirth, Libor Šmejkal, Jairo Sinova

Abstract: Altermagnets are compensated magnets with unconventional $d$, $g$, and $i$-wave spin order in reciprocal space. So far the search for new altermagnetic candidates has been focused on materials in which the magnetic unit cell is identical to the non-magnetic one, i.e. magnetic structures with zero propagation vector. Here, we substantially broaden the family of altermagnetic candidates by predictin… ▽ More Altermagnets are compensated magnets with unconventional $d$, $g$, and $i$-wave spin order in reciprocal space. So far the search for new altermagnetic candidates has been focused on materials in which the magnetic unit cell is identical to the non-magnetic one, i.e. magnetic structures with zero propagation vector. Here, we substantially broaden the family of altermagnetic candidates by predicting supercell altermagnets. Their magnetic unit cell is constructed by enlarging the nonmagnetic primitive unit cell, resulting in a non-zero propagation vector for the magnetic structure. This connection of the magnetic configuration to the ordering of sublattices gives an extra degree of freedom to supercell altermagnets, which can allow for the control over the order parameter spatial orientation. We identify realistic candidates MnSe$_2$ with a $d$-wave order, and RbCoBr$_3$, CsCoCr$_3$, and BaMnO$_3$ with $g$-wave order. We demonstrate the reorientation of the order parameter in MnSe$_2$, which has two different magnetic configurations, whose energy difference is only 5 meV, opening the possibility of controlling the orientation of the altermagnetic order parameter by external perturbations. △ Less

Submitted 29 November, 2023; v1 submitted 31 August, 2023; originally announced August 2023.

Comments: 10 pages, 4 figures

Altermagnetic lifting of Kramers spin degeneracy

Authors: J. Krempaský, L. Šmejkal, S. W. D'Souza, M. Hajlaoui, G. Springholz, K. Uhlířová, F. Alarab, P. C. Constantinou, V. Strokov, D. Usanov, W. R. Pudelko, R. González-Hernández, A. Birk Hellenes, Z. Jansa, H. Reichlová, Z. Šobáň, R. D. Gonzalez Betancourt, P. Wadley, J. Sinova, D. Kriegner, J. Minár, J. H. Dil, T. Jungwirth

Abstract: Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal… ▽ More Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal symmetry-breaking mechanisms. The first one refers to time-reversal symmetry breaking by magnetization of ferromagnets, and tends to be strong due to the non-relativistic exchange-coupling origin. The second mechanism applies to crystals with broken inversion symmetry, and tends to be comparatively weaker as it originates from the relativistic spin-orbit coupling. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic, that allows for lifting the Kramers spin degeneracy without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of lifted Kramers spin degeneracy generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization. Our observation of the altermagnetic lifting of the Kramers spin degeneracy can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors, that have been either identified recently or perceived for many decades as conventional antiferromagnets. △ Less

Submitted 21 August, 2023; originally announced August 2023.

Observation of time-reversal symmetry breaking in the band structure of altermagnetic RuO$_2$

Authors: O. Fedchenko, J. Minar, A. Akashdeep, S. W. D'Souza, D. Vasilyev, O. Tkach, L. Odenbreit, Q. L. Nguyen, D. Kutnyakhov, N. Wind, L. Wenthaus, M. Scholz, K. Rossnagel, M. Hoesch, M. Aeschlimann, B. Stadtmueller, M. Klaeui, G. Schoenhense, G. Jakob, T. Jungwirth, L. Smejkal, J. Sinova, H. J. Elmers

Abstract: Altermagnets are an emerging third elementary class of magnets. Unlike ferromagnets, their distinct crystal symmetries inhibit magnetization while, unlike antiferromagnets, they promote strong spin polarization in the band structure. The corresponding unconventional mechanism of timereversal symmetry breaking without magnetization in the electronic spectra has been regarded as a primary signature… ▽ More Altermagnets are an emerging third elementary class of magnets. Unlike ferromagnets, their distinct crystal symmetries inhibit magnetization while, unlike antiferromagnets, they promote strong spin polarization in the band structure. The corresponding unconventional mechanism of timereversal symmetry breaking without magnetization in the electronic spectra has been regarded as a primary signature of altermagnetism, but has not been experimentally visualized to date. We directly observe strong time-reversal symmetry breaking in the band structure of altermagnetic RuO$_2$ by detecting magnetic circular dichroism in angle-resolved photoemission spectra. Our experimental results, supported by ab initio calculations, establish the microscopic electronic-structure basis for a family of novel phenomena and functionalities in fields ranging from topological matter to spintronics, that are based on the unconventional time-reversal symmetry breaking in altermagnets. △ Less

Submitted 3 June, 2023; originally announced June 2023.

X-ray Magnetic Circular Dichroism in Altermagnetic $α$-MnTe

Authors: A. Hariki, A. Dal Din, O. J. Amin, T. Yamaguchi, A. Badura, D. Kriegner, K. W. Edmonds, R. P. Campion, P. Wadley, D. Backes, L. S. I. Veiga, S. S. Dhesi, G. Springholz, L. Šmejkal, K. Výborný, T. Jungwirth, J. Kuneš

Abstract: Altermagnetism is a recently identified magnetic symmetry class combining characteristics of conventional collinear ferromagnets and antiferromagnets, that were regarded as mutually exclusive, and enabling phenomena and functionalities unparalleled in either of the two traditional elementary magnetic classes. In this work we use symmetry and ab initio theory to explore X-ray magnetic circular dich… ▽ More Altermagnetism is a recently identified magnetic symmetry class combining characteristics of conventional collinear ferromagnets and antiferromagnets, that were regarded as mutually exclusive, and enabling phenomena and functionalities unparalleled in either of the two traditional elementary magnetic classes. In this work we use symmetry and ab initio theory to explore X-ray magnetic circular dichroism (XMCD) in the altermagnetic class. Our results highlight the distinct phenomenology in altermagnets of this time-reversal symmetry breaking response, and its potential utility for element-specific spectroscopy and microscopy in altermagnets. As a representative material for our XMCD study we choose $α$-MnTe with the compensated antiparallel magnetic order in which an anomalous Hall effect has been already demonstrated both in theory and experiment. The predicted magnitude of XMCD lies well within the resolution of existing experimental techniques. △ Less

Submitted 1 February, 2024; v1 submitted 5 May, 2023; originally announced May 2023.

Comments: Experimental data added

Journal ref: Phys. Rev. Lett. 132, 176701 (2024)

Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films

Authors: Peter Kubaščík, Andrej Farkaš, Kamil Olejník, Tinkara Troha, Matěj Hývl, Filip Krizek, Deep C. Joshi, Tomáš Ostatnický, Jiří Jechumtál, Eva Schmoranzerová, Richard P. Campion, Jakub Zázvorka, Vít Novák, Petr Kužel, Tomáš Jungwirth, Petr Němec, Lukáš Nádvorník

Abstract: Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be… ▽ More Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be affected by the film morphology and growth defects. In this study, we investigate the properties of CuMnAs thin films by probing the defect-related uniaxial anisotropy of electric conductivity by contact-free terahertz transmission spectroscopy. We show that the terahertz measurements conveniently detect the conductivity anisotropy, that are consistent with conventional DC Hall-bar measurements. Moreover, the terahertz technique allows for considerably finer determination of anisotropy axes and it is less sensitive to the local film degradation. Thanks to the averaging over a large detection area, the THz probing also allows for an analysis of strongly non-uniform thin films. Using scanning near-field terahertz and electron microscopies, we relate the observed anisotropic conductivity of CuMnAs to the elongation and orientation of growth defects, which influence the local microscopic conductivity. We also demonstrate control over the morphology of defects by using vicinal substrates. △ Less

Submitted 27 March, 2023; originally announced March 2023.

Comments: 33 pages, 16 figures

Chiral magnons in altermagnetic RuO2

Authors: Libor Šmejkal, Alberto Marmodoro, Kyo-Hoon Ahn, Rafael Gonzalez-Hernandez, Ilja Turek, Sergiy Mankovsky, Hubert Ebert, Sunil W. D'Souza, Ondřej Šipr, Jairo Sinova, Tomas Jungwirth

Abstract: Magnons in ferromagnets have one chirality, and typically are in the GHz range and have a quadratic dispersion near the zero wavevector. In contrast, magnons in antiferromagnets are commonly considered to have bands with both chiralities that are degenerate across the entire Brillouin zone, and to be in the THz range and to have a linear dispersion near the center of the Brillouin zone. Here we th… ▽ More Magnons in ferromagnets have one chirality, and typically are in the GHz range and have a quadratic dispersion near the zero wavevector. In contrast, magnons in antiferromagnets are commonly considered to have bands with both chiralities that are degenerate across the entire Brillouin zone, and to be in the THz range and to have a linear dispersion near the center of the Brillouin zone. Here we theoretically demonstrate a new class of magnons on a prototypical $d$-wave altermagnet RuO$_2$ with the compensated antiparallel magnetic order in the ground state. Based on density-functional-theory calculations we observe that the THz-range magnon bands in RuO$_2$ have an alternating chirality splitting, similar to the alternating spin splitting of the electronic bands, and a linear magnon dispersion near the zero wavevector. We also show that, overall, the Landau damping of this metallic altermagnet is suppressed due to the spin-split electronic structure, as compared to an artificial antiferromagnetic phase of the same RuO$_2$ crystal with spin-degenerate electronic bands and chirality-degenerate magnon bands. △ Less

Submitted 24 November, 2022; originally announced November 2022.

Comments: 6 pages, 4 figures

Experimental electronic structure of the electrically switchable antiferromagnet CuMnAs

Authors: A. Garrison Linn, Peipei Hao, Kyle N. Gordon, Dushyant Narayan, Bryan S. Berggren, Nathaniel Speiser, Sonka Reimers, Richard P. Campion, Vít Novák, Sarnjeet S. Dhesi, Timur Kim, Cephise Cacho, Libor Šmejkal, Tomáš Jungwirth, Jonathan D. Denlinger, Peter Wadley, Dan Dessau

Abstract: Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-resolved photoemission spectroscopy (ARPES) are reported, including Fermi surfaces (FS) and energy-wavevector dispersions. After correcting for a chemi… ▽ More Tetragonal CuMnAs is a room temperature antiferromagnet with an electrically reorientable Néel vector and a Dirac semimetal candidate. Direct measurements of the electronic structure of single-crystalline thin films of tetragonal CuMnAs using angle-resolved photoemission spectroscopy (ARPES) are reported, including Fermi surfaces (FS) and energy-wavevector dispersions. After correcting for a chemical potential shift of $\approx-390$ meV (hole doping), there is excellent agreement of FS, orbital character of bands, and Fermi velocities between the experiment and density functional theory calculations. Additionally, 2x1 surface reconstructions are found in the low energy electron diffraction (LEED) and ARPES. This work underscores the need to control the chemical potential in tetragonal CuMnAs to enable the exploration and exploitation of the Dirac fermions with tunable masses, which are predicted to be above the chemical potential in the present samples. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Comments: Submitted to Physical Review X. 20 pages. 9 figures

Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature

Authors: O. J. Amin, S. F. Poole, S. Reimers, L. X. Barton, F. Maccherozzi, S. S. Dhesi, V. Novák, F. Křížek, J. S. Chauhan, R. P. Campion, A. W. Rushforth, T. Jungwirth, O. A. Tretiakov, K. W. Edmonds, P. Wadley

Abstract: Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of the… ▽ More Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of these textures, which have gained significant attention because of their potential for terahertz dynamics, deflection free motion, and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high density, high speed magnetic memory devices. △ Less

Submitted 1 July, 2022; originally announced July 2022.

Comments: 11 pages, 4 figures

Emerging research landscape of altermagnetism

Authors: Libor Šmejkal, Jairo Sinova, Tomas Jungwirth

Abstract: Magnetism is one of the largest, most fundamental, and technologically most relevant fields of condensed-matter physics. Traditionally, two basic magnetic phases have been considered -- ferromagnetism and antiferromagnetism. The breaking of the time-reversal symmetry and spin splitting of the electronic states by the magnetization in ferromagnets underpins a range of macroscopic responses in this… ▽ More Magnetism is one of the largest, most fundamental, and technologically most relevant fields of condensed-matter physics. Traditionally, two basic magnetic phases have been considered -- ferromagnetism and antiferromagnetism. The breaking of the time-reversal symmetry and spin splitting of the electronic states by the magnetization in ferromagnets underpins a range of macroscopic responses in this extensively explored and exploited type of magnets. By comparison, antiferromagnets have vanishing net magnetization. This Perspective reflects on recent observations of materials hosting an intriguing ferromagnetic-antiferromagnetic dichotomy, in which spin-split spectra and macroscopic observables, akin to ferromagnets, are accompanied by antiparallel magnetic order with vanishing magnetization, typical of antiferromagnets. An unconventional non-relativistic symmetry-group formalism offers a resolution of this apparent contradiction by delimiting a third basic magnetic phase, dubbed altermagnetism. Our Perspective starts with an overview of the still emerging unique phenomenology of the phase, and of the wide array of altermagnetic material candidates. In the main part of the article, we illustrate how altermagnetism can enrich our understanding of overarching condensed-matter physics concepts, and have impact on prominent condensed-matter research areas. △ Less

Submitted 22 April, 2022; originally announced April 2022.

Comments: 25 pages, 13 figures

Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor

Authors: R. D. Gonzalez Betancourt, J. Zubáč, R. J. Gonzalez-Hernandez, K. Geishendorf, Z. Šobáň, G. Springholz, K. Olejník, L. Šmejkal, J. Sinova, T. Jungwirth, S. T. B. Goennenwein, A. Thomas, H. Reichlová, J. Železný, D. Kriegner

Abstract: The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a colli… ▽ More The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect. △ Less

Submitted 23 January, 2023; v1 submitted 13 December, 2021; originally announced December 2021.

Comments: 34 pages, 14 figures

Journal ref: Phys. Rev. Lett. 130, 036702 (2023)

Defect-driven antiferromagnetic domain walls in CuMnAs films

Authors: Sonka Reimers, Dominik Kriegner, Olena Gomonay, Dina Carbone, Filip Krizek, Vit Novak, Richard P. Campion, Francesco Maccherozzi, Alexander Bjorling, Oliver J. Amin, Luke X. Barton, Stuart F. Poole, Khalid A. Omari, Jan Michalicka, Ondrej Man, Jairo Sinova, Tomas Jungwirth, Peter Wadley, Sarnjeet S. Dhesi, Kevin W. Edmonds

Abstract: Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microsco… ▽ More Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance. △ Less

Submitted 7 October, 2021; originally announced October 2021.

Hysteretic effects and magnetotransport of electrically switched CuMnAs

Authors: Jan Zubáč, Zdeněk Kašpar, Filip Krizek, Tobias Förster, Richard P. Campion, Vít Novák, Tomáš Jungwirth, Kamil Olejník

Abstract: Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $\sim$ 60 T, we reveal hyster… ▽ More Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $\sim$ 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field. These properties of the switched state are discussed in the context of recent studies of antiferromagnetic textures in CuMnAs. △ Less

Submitted 12 July, 2021; originally announced July 2021.

Anomalous Hall antiferromagnets

Authors: Libor Smejkal, Allan H. MacDonald, Jairo Sinova, Satoru Nakatsuji, Tomas Jungwirth

Abstract: The Hall effect, in which current flows perpendicular to an applied electrical bias, has played a prominent role in modern condensed matter physics over much of the subject's history. Appearing variously in classical, relativistic and quantum guises, it has among other roles contributed to establishing the band theory of solids, to research on new phases of strongly interacting electrons, and to t… ▽ More The Hall effect, in which current flows perpendicular to an applied electrical bias, has played a prominent role in modern condensed matter physics over much of the subject's history. Appearing variously in classical, relativistic and quantum guises, it has among other roles contributed to establishing the band theory of solids, to research on new phases of strongly interacting electrons, and to the phenomenology of topological condensed matter. The dissipationless Hall current requires time-reversal symmetry breaking. For over a century it has either been ascribed to externally applied magnetic field and referred to as the ordinary Hall effect, or ascribed to spontaneous non-zero total internal magnetization (ferromagnetism) and referred to as the anomalous Hall effect. It has not commonly been associated with antiferromagnetic order. More recently, however, theoretical predictions and experimental observations have identified large Hall effects in some compensated magnetic crystals, governed by neither of the global magnetic-dipole symmetry breaking mechanisms mentioned above. The goals of this article are to systematically organize the present understanding of anomalous antiferromagnetic materials that generate a non-zero Hall effect, which we will call anomalous Hall antiferromagnets, and to discuss this class of materials in a broader fundamental and applied research context. Our motivation in drawing attention to anomalous Hall antiferromagnets is two-fold. First, since Hall effects that are not governed by magnetic dipole symmetry breaking are at odds with the traditional understanding of the phenomenon, the topic deserves attention on its own. Second, this new reincarnation has again placed the Hall effect in the middle of an emerging field of physics at the intersection of multipole magnetism, topological condensed matter, and spintronics. △ Less

Submitted 7 July, 2021; originally announced July 2021.

Comments: 21 pages, 6 figures, 1 table

Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs

Authors: J. J. F. Heitz, L. Nádvorník, V. Balos, Y. Behovits, A. L. Chekhov, T. S. Seifert, K. Olejník, Z. Kašpar, K. Geishendorf, V. Novák, R. P. Campion, M. Wolf, T. Jungwirth, T. Kampfrath

Abstract: We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines… ▽ More We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines the time scale of the suppression. As we do not observe a direct impact of the optical pulse on the state of CuMnAs, all observed effects are primarily mediated by the substrate. The sample region of suppressed resistance switching is given by the optical spot size, thereby making our scheme potentially applicable for transient low-power masking of structured areas with feature sizes of ~100 nm and even smaller. △ Less

Submitted 16 June, 2021; originally announced June 2021.

Altermagnetism: spin-momentum locked phase protected by non-relativistic symmetries

Authors: Libor Šmejkal, Jairo Sinova, Tomas Jungwirth

Abstract: The search for novel magnetic quantum phases, phenomena and functional materials has been guided by relativistic magnetic-symmetry groups in coupled spin and real space from the dawn of the field in 1950s to the modern era of topological matter. However, the magnetic groups cannot disentangle non-relativistic phases and effects, such as the recently reported unconventional spin physics in collinea… ▽ More The search for novel magnetic quantum phases, phenomena and functional materials has been guided by relativistic magnetic-symmetry groups in coupled spin and real space from the dawn of the field in 1950s to the modern era of topological matter. However, the magnetic groups cannot disentangle non-relativistic phases and effects, such as the recently reported unconventional spin physics in collinear antiferromagnets from the typically weak relativistic spin-orbit coupling phenomena. Here we discover that more general spin symmetries in decoupled spin and crystal space categorize non-relativistic collinear magnetism in three phases: conventional ferromagnets and antiferromagnets, and a third distinct phase combining zero net magnetization with an alternating spin-momentum locking in energy bands, which we dub "altermagnetic". For this third basic magnetic phase, which is omitted by the relativistic magnetic groups, we develop a spin-group theory describing six characteristic types of the altermagnetic spin-momentum locking. We demonstrate an extraordinary spin-splitting mechanism in altermagnetic bands originating from a local electric crystal field, which contrasts with the conventional magnetic or relativistic splitting by global magnetization or inversion asymmetry. Based on first-principles calculations, we identify altermagnetic candidates ranging from insulators and metals to a parent crystal of cuprate superconductor. Our results underpin emerging research of quantum phases and spintronics in high-temperature magnets with light elements, vanishing net magnetization, and strong spin-coherence. △ Less

Submitted 20 October, 2021; v1 submitted 12 May, 2021; originally announced May 2021.

Comments: 35 pages including Supplementary information, 8 figures, 1 table

Giant and tunneling magnetoresistance effects from anisotropic and valley-dependent spin-momentum interactions in antiferromagnets

Authors: Libor Šmejkal, Anna Birk Hellenes, Rafael González-Hernández, Jairo Sinova, Tomáš Jungwirth

Abstract: Giant or tunneling magnetoresistance are physical phenomena used for reading information in commercial spintronic devices. The effects rely on a conserved spin current passing between a reference and a sensing ferromagnetic electrode in a multilayer structure. Recently, we have proposed that these fundamental spintronic effects can be realized in collinear antiferromagnets with staggered spin-mome… ▽ More Giant or tunneling magnetoresistance are physical phenomena used for reading information in commercial spintronic devices. The effects rely on a conserved spin current passing between a reference and a sensing ferromagnetic electrode in a multilayer structure. Recently, we have proposed that these fundamental spintronic effects can be realized in collinear antiferromagnets with staggered spin-momentum exchange interaction, which generates conserved spin currents in the absence of a net equilibrium magnetization. Here we elaborate on the proposal by presenting archetype model mechanisms for the antiferromagnetic giant and tunneling magnetoresistance effects. The models are based, respectively, on anisotropic and valley-dependent forms of the non-relativistic staggered spin-momentum interaction. Using first principles calculations we link these model mechanisms to real antiferromagnetic materials and predict a $\sim$100\% scale for the effects. We point out that besides the GMR/TMR detection, our models directly imply the possibility of spin-transfer-torques excitation of the antiferromagnets. △ Less

Submitted 23 March, 2021; originally announced March 2021.

Comments: 6 pages, 4 figures

Unidirectional magnetoresistance and spin-orbit torque in NiMnSb

Authors: J. Železný, Z. Fang, K. Olejník, J. Patchett, F. Gerhard, C. Gould, L. W. Molenkamp, C. Gomez-Olivella, J. Zemen, T. Tichý, T. Jungwirth, C. Ciccarelli

Abstract: Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry… ▽ More Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry in the bulk of this half-heusler crystal. Besides the angular dependence on magnetization, the competition of Rashba and Dresselhaus-like spin-orbit couplings results in the dependence of these effects on the crystal direction of the applied electric field. The phenomenology that we observe highlights potential inapplicability of commonly considered approaches for interpreting experiments. We point out that, in general, there is no direct link between the current-induced non-equilibrium spin polarization inferred from the measured spin-orbit torque and the unidirectional magnetiresistance. We also emphasize that the unidirectional magnetoresistance has not only longitudinal but also transverse components in the electric field -- current indices which complicates its separation from the thermoelectric contributions to the detected signals in common experimental techniques. We use the theoretical results to analyze our measurements of the on-resonance and off-resonance mixing signals in microbar devices fabricated from an epitaxial NiMnSb film along different crystal directions. Based on the analysis we extract an experimental estimate of the unidirectional magnetoresistance in NiMnSb. △ Less

Submitted 25 February, 2021; originally announced February 2021.

Comments: 29 pages, 13 figures

Journal ref: Phys. Rev. B 104, 054429 (2021)

Macroscopic time reversal symmetry breaking by staggered spin-momentum interaction

Authors: Helena Reichlová, Rafael Lopes Seeger, Rafael González-Hernández, Ismaila Kounta, Richard Schlitz, Dominik Kriegner, Philipp Ritzinger, Michaela Lammel, Miina Leiviskä, Václav Petříček, Petr Doležal, Eva Schmoranzerová, Antonín Bad'ura, Andy Thomas, Vincent Baltz, Lisa Michez, Jairo Sinova, Sebastian T. B. Goennenwein, Tomáš Jungwirth, Libor Šmejkal

Abstract: Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Aniso… ▽ More Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Anisotropic electron interactions, on the other hand, have been a domain of correlated quantum phases, such as the T-invariant nematics or unconventional superconductors. Here we report discovery of a broken-T phase of itinerant Bloch electrons with an unconventional anisotropic spin-momentum interaction, whose staggered nature leads to the formation of two ferromagnetic-like valleys in the momentum space with opposite spin splittings. We describe qualitatively the effect by deriving a non-relativistic single-particle Hamiltonian model. Next, we identify the unconventional staggered spin-momentum interaction by first-principles electronic structure calculations in a four-sublattice antiferromagnet Mn5Si3 with a collinear checkerboard magnetic order. We show that the staggered spin-momentum interaction is set by nonrelativistic spin-symmetries which were previously omitted in relativistic physics classifications of spin interactions and topological quasiparticles. Our measurements of a spontaneous Hall effect in epilayers of antiferromagnetic Mn5Si3 with vanishing magnetization are consistent with our theory predictions. Bloch electrons with the unconventional staggered spin interaction, compatible with abundant low atomic-number materials, strong spin-coherence, and collinear antiferromagnetic order open unparalleled possibilities for realizing T-symmetry broken spin and topological quantum phases. △ Less

Submitted 20 March, 2021; v1 submitted 31 December, 2020; originally announced December 2020.

Comments: 26 pages, 4 figures

Atomically sharp domain walls in an antiferromagnet

Authors: Filip Krizek, Sonka Reimers, Zdeněk Kašpar, Alberto Marmodoro, Jan Michalička, Ondřej Man, Alexander Edstrom, Oliver J. Amin, Kevin W. Edmonds, Richard P. Campion, Francesco Maccherozzi, Sarnjeet S. Dnes, Jan Zubáč, Jakub Železný, Karel Výborný, Kamil Olejník, Vít Novák, Jan Rusz, Juan C. Idrobo, Peter Wadley, Tomas Jungwirth

Abstract: The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic d… ▽ More The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Comments: 8 pages, 4 figures, Supplementary information

Journal ref: Science advances, 8(13), eabn3535 (2022)

Frequency-independent terahertz anomalous Hall effect in DyCo$_{5}$, Co$_{32}$Fe$_{68}$ and Gd$_{27}$Fe$_{73}$ thin films from DC to 40 THz

Authors: Tom S. Seifert, Ulrike Martens, Florin Radu, Mirkow Ribow, Marco Berritta, Lukas Nádvorník, Ronald Starke, Tomas Jungwirth, Martin Wolf, Ilie Radu, Markus Münzenberg, Peter M. Oppeneer, Georg Woltersdorf, Tobias Kampfrath

Abstract: The anomalous Hall effect (AHE) is a fundamental spintronic charge-to-charge-current conversion phenomenon and closely related to spin-to-charge-current conversion by the spin Hall effect. Future high-speed spintronic devices will crucially rely on such conversion effects at terahertz (THz) frequencies. Here, we reveal that the AHE remains operative from DC up to 40 THz with a flat frequency respo… ▽ More The anomalous Hall effect (AHE) is a fundamental spintronic charge-to-charge-current conversion phenomenon and closely related to spin-to-charge-current conversion by the spin Hall effect. Future high-speed spintronic devices will crucially rely on such conversion effects at terahertz (THz) frequencies. Here, we reveal that the AHE remains operative from DC up to 40 THz with a flat frequency response in thin films of three technologically relevant magnetic materials: DyCo$_{5}$, Co$_{32}$Fe$_{68}$ and Gd$_{27}$Fe$_{73}$. We measure the frequency-dependent conductivity-tensor elements $σ_{xx}$ and $σ_{yx}$ and find good agreement with DC measurements. Our experimental findings are fully consistent with ab-initio calculations of $σ_{yx}$ for CoFe and highlight the role of the large Drude scattering rate (~100 THz) of metal thin films, which smears out any sharp spectral features of the THz AHE. Finally, we find that the intrinsic contribution to the THz AHE dominates over the extrinsic mechanisms for the Co$_{32}$Fe$_{68}$ sample. The results imply that the AHE and related effects such as the spin Hall effect are highly promising ingredients of future THz spintronic devices reliably operating from DC to 40 THz and beyond. △ Less

Submitted 4 March, 2021; v1 submitted 3 November, 2020; originally announced November 2020.

Journal ref: Advanced Materials 2021, 2007398

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs

Authors: Tomas Janda, Joao Godinho, Tomas Ostatnicky, Emanuel Pfitzner, Georg Ulrich, Arne Hoehl, Sonka Reimers, Zbynek Soban, Thomas Metzger, Helena Reichlova, Vít Novák, Richard Campion, Joachim Heberle, Peter Wadley, Kevin Edmonds, Ollie Amin, Jas Chauhan, Sarnjeet Dhesi, Francesco Maccherozzi, Ruben Otxoa, Pierre Roy, Kamil Olejnik, Petr Němec, Tomas Jungwirth, Bernd Kaestner , et al. (1 additional authors not shown)

Abstract: Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferroma… ▽ More Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Néel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Néel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism. △ Less

Submitted 11 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Materials 4, 094413 (2020)

Observation of the Anomalous Hall Effect in a Collinear Antiferromagnet

Authors: Zexin Feng, Xiaorong Zhou, Libor Šmejkal, Lei Wu, Zengwei Zhu, Huixin Guo, Rafael González-Hernández, Xiaoning Wang, Han Yan, Peixin Qin, Xin Zhang, Haojiang Wu, Hongyu Chen, Zhengcai Xia, Chengbao Jiang, Michael Coey, Jairo Sinova, Tomáš Jungwirth, Zhiqi Liu

Abstract: Time-reversal symmetry breaking is the basic physics concept underpinning many magnetic topological phenomena such as the anomalous Hall effect (AHE) and its quantized variant. The AHE has been primarily accompanied by a ferromagnetic dipole moment, which hinders the topological quantum states and limits data density in memory devices, or by a delicate noncollinear magnetic order with strong spin… ▽ More Time-reversal symmetry breaking is the basic physics concept underpinning many magnetic topological phenomena such as the anomalous Hall effect (AHE) and its quantized variant. The AHE has been primarily accompanied by a ferromagnetic dipole moment, which hinders the topological quantum states and limits data density in memory devices, or by a delicate noncollinear magnetic order with strong spin decoherence, both limiting their applicability. A potential breakthrough is the recent theoretical prediction of the AHE arising from collinear antiferromagnetism in an anisotropic crystal environment. This new mechanism does not require magnetic dipolar or noncollinear fields. However, it has not been experimentally observed to date. Here we demonstrate this unconventional mechanism by measuring the AHE in an epilayer of a rutile collinear antiferromagnet RuO$_2$. The observed anomalous Hall conductivity is large, exceeding 300 S/cm, and is in agreement with the Berry phase topological transport contribution. Our results open a new unexplored chapter of time-reversal symmetry breaking phenomena in the abundant class of collinear antiferromagnetic materials. △ Less

Submitted 7 January, 2021; v1 submitted 20 February, 2020; originally announced February 2020.

Comments: 33 pages, 14 figures, 2 tables

Journal ref: Nature Electronics 5, 735-743 (2022)

Efficient Electrical Spin-Splitter Based on Non-Relativistic Collinear Antiferromagnetism

Authors: Rafael González-Hernández, Libor Šmejkal, Karel Výborný, Yuta Yahagi, Jairo Sinova, Tomáš Jungwirth, Jakub Železný

Abstract: Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient spin-current generation, arising from anisotropically-split bands with conserved up and down spins along the Néel vector axis. The zero net moment antiferromagnet ac… ▽ More Electrical spin-current generation is among the core phenomena driving the field of spintronics. Using {\em ab initio} calculations we show that a room-temperature metallic collinear antiferromagnet RuO$_2$ allows for highly efficient spin-current generation, arising from anisotropically-split bands with conserved up and down spins along the Néel vector axis. The zero net moment antiferromagnet acts as an electrical spin-splitter with a 34$^\circ$ propagation angle between spin-up and spin-down currents. Correspondingly, the spin-conductivity is a factor of three larger than the record value from a survey of 20,000 non-magnetic spin-Hall materials. We propose a versatile spin-splitter-torque concept utilizing antiferromagnetic RuO$_2$ films interfaced with a ferromagnet. △ Less

Submitted 10 August, 2020; v1 submitted 17 February, 2020; originally announced February 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 126, 127701 (2021)

Current-induced fragmentation of antiferromagnetic domains

Authors: M. S. Wörnle, P. Welter, Z. Kašpar, K. Olejník, V. Novák, R. P. Campion, P. Wadley, T. Jungwirth, C. L. Degen, P. Gambardella

Abstract: Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have demonstrated giant resistive switching signals in single-layer antiferromagnetic films together with analog switching and relaxation characteristics relevant for neur… ▽ More Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have demonstrated giant resistive switching signals in single-layer antiferromagnetic films together with analog switching and relaxation characteristics relevant for neuromorphic computing. Here we report simultaneous electrical pulsing and scanning NV magnetometry of antiferromagnetic domains in CuMnAs performed using a pump-probe scheme. We observe a nano-scale fragmentation of the antiferromagnetic domains, which is controlled by the current amplitude and independent on the current direction. The fragmented antiferromagnetic state conserves a memory of the pristine domain pattern, towards which it relaxes. Domain fragmentation coexists with permanent switching due to the reorientation of the antiferromagnetic moments. Our simultaneous imaging and resistance measurements show a correlation between the antiferromagnetic domain fragmentation and the largest resistive switching signals in CuMnAs. △ Less

Submitted 11 December, 2019; originally announced December 2019.

Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

Authors: M. Wang, C. Andrews, S. Reimers, O. J. Amin, P. Wadley, R. P. Campion, S. F. Poole, J. Felton, K. W. Edmonds, B. L. Gallagher, A. W. Rushforth, O. Makarovsky, K. Gas, M. Sawicki, D. Kriegner, J. Zubac, K. Olejnik, V. Novak, T. Jungwirth, M. Shahrokhvand, U. Zeitler, S. S. Dhesi, F. Maccherozzi

Abstract: Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a b… ▽ More Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields. △ Less

Submitted 21 June, 2021; v1 submitted 27 November, 2019; originally announced November 2019.

Comments: 26 pages, 6 figures

Journal ref: Phys. Rev. B 101, 094429 (2020)

Molecular beam epitaxy of CuMnAs

Authors: Filip Krizek, Zdeněk Kašpar, Aliaksei Vetushka, Dominik Kriegner, Elisabetta M. Fiordaliso, Jan Michalicka, Ondřej Man, Jan Zubáč, Martin Brajer, Victoria A. Hills, Kevin W. Edmonds, Peter Wadley, Richard P. Campion, Kamil Olejník, Tomáš Jungwirth, Vít Novák

Abstract: We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si subs… ▽ More We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching. △ Less

Submitted 5 November, 2019; originally announced November 2019.

Comments: 10 pages, 8 figures and supplementary material

Journal ref: Phys. Rev. Materials 4, 014409 (2020)

Spin-orbitronic materials with record spin-charge conversion from high-throughput ab initio calculations

Authors: Yang Zhang, Qiunan Xu, Klaus Koepernik, Jakub Železný, Tomáš Jungwirth, Claudia Felser, Jeroen van den Brink, Yan Sun

Abstract: The spin Hall effect (SHE) is an important spintronics phenomenon, which allows transforming a charge current into a spin current and vice versa without the use of magnetic materials or magnetic fields. To gain new insight into the physics of the SHE and to identify materials with a substantial spin Hall conductivities (SHC), we performed high-precision, high-throughput ab initio electronic struct… ▽ More The spin Hall effect (SHE) is an important spintronics phenomenon, which allows transforming a charge current into a spin current and vice versa without the use of magnetic materials or magnetic fields. To gain new insight into the physics of the SHE and to identify materials with a substantial spin Hall conductivities (SHC), we performed high-precision, high-throughput ab initio electronic structure calculations of the intrinsic SHC for over 20,000 non-magnetic crystals. The calculations reveal a strong and unexpected relation of the magnitude of the SHC with the crystalline symmetry, which we show exists because large SHC is typically associated with mirror symmetry protected nodal lines in the band structure. From the new developed database, we identify new promising materials. This includes eleven materials with a SHC comparable or even larger than that the up to now record Pt as well as materials with different types of spin currents, which could allow for new types of spin-obitronics devices. △ Less

Submitted 8 April, 2020; v1 submitted 20 September, 2019; originally announced September 2019.

Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses

Authors: Zdeněk Kašpar, Miloslav Surýnek, Jan Zubáč, Filip Krizek, Vít Novák, Richard P. Campion, Martin S. Wörnle, Pietro Gambardella, Xavier Marti, Petr Němec, K. W. Edmonds, S. Reimers, O. J. Amin, F. Maccherozzi, S. S. Dhesi, Peter Wadley, Jörg Wunderlich, Kamil Olejník, Tomáš Jungwirth

Abstract: Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets,… ▽ More Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets, the readout magnetoresistivity signals in simple antiferromagnetic films have been weak and the extension of the electrical reorientation mechanism to optics has not been achieved. Here we report reversible and reproducible quenching of an antiferromagnetic CuMnAs film by either electrical or ultrashort optical pulses into nano-fragmented domain states. The resulting resistivity changes approach 20\% at room temperature, which is comparable to the giant magnetoresistance ratios in ferromagnetic multilayers. We also obtain a signal readout by optical reflectivity. The analog time-dependent switching and relaxation characteristics of our devices can mimic functionality of spiking neural network components. △ Less

Submitted 24 June, 2021; v1 submitted 19 September, 2019; originally announced September 2019.

Journal ref: Nat. Electron 4 (2021) 30-37

Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn$_{\text{3}}$Sn

Authors: Helena Reichlova, Tomas Janda, Joao Godinho, Anastasios Markou, Dominik Kriegner, Richard Schlitz, Jakub Zelezny, Zbynek Soban, Mauricio Bejarano, Helmut Schultheiss, Petr Nemec, Tomas Jungwirth, Claudia Felser, Joerg Wunderlich, Sebastian T. B. Goennenwein

Abstract: Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally obse… ▽ More Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally observed in non-collinear AFMs, and the presence of the equivalent to the ferromagnetic spin transfer torque via spin polarized currents was theoretically predicted. In spite of these developments, an interpretation of the rich physical phenomena observed in non-collinear antiferromagnets is challenging, since the microscopic spin arrangement, the magnetic domain distribution, and the domain orientations have proven notoriously difficult to access experimentally. This is all the more problematic, as imaging and writing magnetic domains is of central importance for applications. Successful imaging is a basic requirement to experimentally confirm the spin transfer torque acting on non-collinear domain walls and therefore of eminent interest. Here, we demonstrate that the local magnetic structure of the non-collinear AFM Mn3Sn films can be imaged by scanning thermal gradient microscopy (STGM). The technique is based on scanning a laser spot over the sample's surface, and recording the ensuing thermo-voltage. We image the magnetic structure at a series of different temperatures and show that at room temperature, the domain structure is not affected by the application of moderate magnetic fields. In addition to imaging, we establish a scheme for heat-assisted magnetic recording, using local laser heating in combination with magnetic fields to intentionally write domain patterns into the antiferromagnet. △ Less

Submitted 31 May, 2019; originally announced May 2019.

Comments: 4 figures

Crystal Hall effect in Collinear Antiferromagnets

Authors: Libor Šmejkal, Rafael González-Hernández, Tomáš Jungwirth, Jairo Sinova

Abstract: Electrons, commonly moving along the applied electric field, acquire in certain magnets a dissipationless transverse velocity. This spontaneous Hall effect, discovered more than a century ago, has been understood in terms of the time-reversal symmetry breaking by the internal spin-structure of a ferromagnetic, noncolinear antiferromagnetic or skyrmionic form. Here we identify previously overlooked… ▽ More Electrons, commonly moving along the applied electric field, acquire in certain magnets a dissipationless transverse velocity. This spontaneous Hall effect, discovered more than a century ago, has been understood in terms of the time-reversal symmetry breaking by the internal spin-structure of a ferromagnetic, noncolinear antiferromagnetic or skyrmionic form. Here we identify previously overlooked robust Hall effect mechanism arising from collinear antiferromagnetism combined with nonmagnetic atoms at non-centrosymmetric positions. We predict a large magnitude of this crystal Hall effect in a room-temperature collinear antiferromagnet RuO$_2$ and catalogue, based on our symmetry rules, extensive families of material candidates. We show that the crystal Hall effect is accompanied by the possibility to control its sign by the crystal chirality. We illustrate that accounting for the full magnetization density distribution instead of the simplified spin-structure sheds new light on symmetry breaking phenomena in complex magnets and opens an alternative avenue towards quantum materials engineering for low-dissipation nanoelectronics. △ Less

Submitted 20 February, 2020; v1 submitted 2 January, 2019; originally announced January 2019.

Comments: 21 pages, 5 figures

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet

Authors: J. Godinho, H. Reichlova, D. Kriegner, V. Novak, K. Olejnik, Z. Kaspar, Z. Soban, P Wadley, R. P. Campion, R. M. Otxoa, P. E. Roy, J. Zelezny, T. Jungwirth, J. Wunderlich

Abstract: Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed f… ▽ More Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Néel vector reversal in CuMnAs which comprises two collinear spin sublattices and belongs to an antiferromagnetic symmetry group with no net magnetic moment. We detect the spin reversal by measuring a second-order magnetotransport coefficient whose presence is allowed in systems with broken space inversion symmetry. The phenomenology of the non-linear transport effect we observe in CuMnAs is consistent with a microscopic scenario combining anisotropic magneto-resistance (AMR) with a transient tilt of the Néel vector due to a current-induced, staggered spin-orbit field. We use the same staggered spin-orbit field, but of a higher amplitude, for the electrical switching between reversed antiferromagnetic states which are stable and show no sign of decay over 25 hour probing times. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 15 pages, 5 pictures, supplementary informations

Symmetry and topology in antiferromagnetic spintronics

Authors: Libor Šmejkal, Tomáš Jungwirth

Abstract: Antiferromagnetic spintronics focuses on investigating and using antiferromagnets as active elements in spintronics structures. Last decade advances in relativistic spintronics led to the discovery of the staggered, current-induced field in antiferromagnets. The corresponding Néel spin-orbit torque allowed for efficient electrical switching of antiferromagnetic moments and, in combination with ele… ▽ More Antiferromagnetic spintronics focuses on investigating and using antiferromagnets as active elements in spintronics structures. Last decade advances in relativistic spintronics led to the discovery of the staggered, current-induced field in antiferromagnets. The corresponding Néel spin-orbit torque allowed for efficient electrical switching of antiferromagnetic moments and, in combination with electrical readout, for the demonstration of experimental antiferromagnetic memory devices. In parallel, the anomalous Hall effect was predicted and subsequently observed in antiferromagnets. A new field of spintronics based on antiferromagnets has emerged. We will focus here on the introduction into the most significant discoveries which shaped the field together with a more recent spin-off focusing on combining antiferromagnetic spintronics with topological effects, such as antiferromagnetic topological semimetals and insulators, and the interplay of antiferromagnetism, topology, and superconductivity in heterostructures. △ Less

Submitted 16 April, 2018; originally announced April 2018.

Comments: Book chapter

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

Authors: A. Manchon, J. Zelezný, I. M. Miron, T. Jungwirth, J. Sinova, A. Thiaville, K. Garello, P. Gambardella

Abstract: Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switch… ▽ More Spin-orbit coupling in inversion-asymmetric magnetic crystals and structures has emerged as a powerful tool to generate complex magnetic textures, interconvert charge and spin under applied current, and control magnetization dynamics. Current-induced spin-orbit torques mediate the transfer of angular momentum from the lattice to the spin system, leading to sustained magnetic oscillations or switching of ferromagnetic as well as antiferromagnetic structures. The manipulation of magnetic order, domain walls and skyrmions by spin-orbit torques provides evidence of the microscopic interactions between charge and spin in a variety of materials and opens novel strategies to design spintronic devices with potentially high impact in data storage, nonvolatile logic, and magnonic applications. This paper reviews recent progress in the field of spin-orbitronics, focusing on theoretical models, material properties, and experimental results obtained on bulk noncentrosymmetric conductors and multilayer heterostructures, including metals, semiconductors, and topological insulator systems. Relevant aspects for improving the understanding and optimizing the efficiency of nonequilibrium spin-orbit phenomena in future nanoscale devices are also discussed. △ Less

Submitted 24 April, 2019; v1 submitted 29 January, 2018; originally announced January 2018.

Comments: 90 pages, 50 figures

Narrow-band tunable THz detector in antiferromagnets via Néel spin-orbit torque and spin-transfer torque

Authors: O. Gomonay, T. Jungwirth, J. Sinova

Abstract: We study dynamics of antiferromagnets induced by simultaneous application of dc spin current and ac charge current, motivated by the requirement of all-electrically controlled devices in THz gap (0.1-30 THz). We show that ac electric current, via Néel spin orbit torques, can lock the phase of a steady rotating Néel vector whose precession is controlled by a dc spin current. In the phase-locking re… ▽ More We study dynamics of antiferromagnets induced by simultaneous application of dc spin current and ac charge current, motivated by the requirement of all-electrically controlled devices in THz gap (0.1-30 THz). We show that ac electric current, via Néel spin orbit torques, can lock the phase of a steady rotating Néel vector whose precession is controlled by a dc spin current. In the phase-locking regime the frequency of the incoming ac signal coincides with the frequency of autooscillations which for typical antiferromagnets fall into the THz range. The frequency of autooscillations is proportional to the precession-induced tilting of the magnetic sublattices related to the so-called dynamical magnetization. We show how the incoming ac signal can be detected from the measurement of the dc-current dependencies of the constant dynamical magnetization. We formulate the conditions of phase-locking based on relations between parameters of an antiferromagnet and the characteristics of the incoming signal (frequency, amplitude, bandwidth, duration). We also show that the rotating Néel vector can generate ac electrical current via inverse Néel spin-orbit torque. Hence, antiferromagnets driven by dc spin current can be used as tunable detectors and emitters of narrow-band signals operating in the THz range. △ Less

Submitted 7 December, 2017; originally announced December 2017.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 98, 104430 (2018)

Band structure of CuMnAs probed by optical and photoemission spectroscopy

Authors: M. Veis, J. Minar, G. Steciuk, L. Palatinus, C. Rinaldi, M. Cantoni, D. Kriegner, K. K. Tikuisis, J. Hamrle, M. Zahradnik, R. Antos, J. Zelezny, L. Smejkal, P. Wadley, R. P. Campion, C. Frontera, K. Uhlirova, T. Duchon, P. Kuzel, V. Novak, T. Jungwirth, K. Vyborny

Abstract: Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave… ▽ More Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave functions) which has so far been tested only to a limited extent. We show that AC permittivity (obtained from ellipsometry) and UV photoelectron spectra agree with density functional calculations. Together with the x-ray diffraction and precession electron diffraction tomography, our analysis confirms recent theoretical claim [Phys.Rev.B 96, 094406 (2017)] that copper atoms occupy lattice positions in the basal plane of the tetragonal unit cell. △ Less

Submitted 21 December, 2017; v1 submitted 4 December, 2017; originally announced December 2017.

Comments: 5 pages, 5 figures + Supplementary Information

Journal ref: Phys. Rev. B 97, 125109 (2018)

THz electrical writing speed in an antiferromagnetic memory

Authors: K. Olejnik, T. Seifert, Z. Kaspar, V. Novak, P. Wadley, R. P. Campion, M. Baumgartner, P. Gambardella, P. Nemec, J. Wunderlich, J. Sinova, M. Muller, T. Kampfrath, T. Jungwirth

Abstract: The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed… ▽ More The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to THz using an antiferromagnet. Efficient current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the twelve orders of magnitude range of writing speeds from Hz to THz. Our work opens the path towards the development of memory-logic technology reaching the elusive THz band. △ Less

Submitted 24 October, 2017; originally announced November 2017.

Current-polarity dependent manipulation of antiferromagnetic domains

Authors: P. Wadley, S. Reimers, M. J. Grzybowski, C. Andrews, M. Wang, J. S. Chauhan, B. L. Gallagher, R. P. Campion, K. W. Edmonds, S. S. Dhesi, F. Maccherozzi, V. Novak, J. Wunderlich, T. Jungwirth

Abstract: Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plan… ▽ More Antiferromagnets have a number of favourable properties as active elements in spintronic devices, including ultra-fast dynamics, zero stray fields and insensitivity to external magnetic fields . Tetragonal CuMnAs is a testbed system in which the antiferromagnetic order parameter can be switched reversibly at ambient conditions using electrical currents . In previous experiments, orthogonal in-plane current pulses were used to induce 90 degree rotations of antiferromagnetic domains and demonstrate the operation of all-electrical memory bits in a multi-terminal geometry . Here, we demonstrate that antiferromagnetic domain walls can be manipulated to realize stable and reproducible domain changes using only two electrical contacts. This is achieved by using the polarity of the current to switch the sign of the current-induced effective field acting on the antiferromagnetic sublattices. The resulting reversible domain and domain wall reconfigurations are imaged using x-ray magnetic linear dichroism microscopy, and can also be detected electrically. The switching by domain wall motion can occur at much lower current densities than those needed for coherent domain switching. △ Less

Submitted 14 November, 2017; originally announced November 2017.

Comments: 8 pages, 4 figures

Magnetic anisotropy in antiferromagnetic hexagonal MnTe

Authors: D. Kriegner, H. Reichlova, J. Grenzer, W. Schmidt, E. Ressouche, J. Godinho, T. Wagner, S. Y. Martin, A. B. Shick, V. V. Volobuev, G. Springholz, V. Holý, J. Wunderlich, T. Jungwirth, K. Výborný

Abstract: Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic mome… ▽ More Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic moments within the hexagonal basal plane are determined to be along $\left<1\bar100\right>$ directions. The spin-flop transition and concomitant repopulation of domains in strong magnetic fields is observed. Using epitaxially induced strain the onset of the spin-flop transition changes from $\sim2$~T to $\sim0.5$~T for films grown on InP and SrF$_2$ substrates, respectively. △ Less

Submitted 17 September, 2018; v1 submitted 23 October, 2017; originally announced October 2017.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 96, 214418 (2017)

Writing and Reading antiferromagnetic Mn$_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance

Authors: S. Yu. Bodnar, L. Šmejkal, I. Turek, T. Jungwirth, O. Gomonay, J. Sinova, A. A. Sapozhnik, H. -J. Elmers, M. Kläui, M. Jourdan

Abstract: Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the same time active manipulation up to the natural THz dynamic speeds of antiferromagnets is possible, thus combining exceptional storage density and ultra-fast switc… ▽ More Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the same time active manipulation up to the natural THz dynamic speeds of antiferromagnets is possible, thus combining exceptional storage density and ultra-fast switching. However, the active manipulation and read-out of the Néel vector (staggered moment) orientation is challenging. Recent predictions have opened up a path based on a new spin-orbit torque, which couples directly to the Néel order parameter. This Néel spin-orbit torque was first experimentally demonstrated in a pioneering work using semimetallic CuMnAs. Here we demonstrate for Mn$_2$Au, a good conductor with a high ordering temperature suitable for applications, reliable and reproducible switching using current pulses and readout by magnetoresistance measurements. The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than $\simeq 6$~$\%$ is reproduced by ab initio transport calculations. △ Less

Submitted 8 June, 2017; originally announced June 2017.

Comments: 5 pages, 4 figures

Journal ref: Nature Communications 9, 348 (2018)

Fast optical control of spin in semiconductor interfacial structures

Authors: L. Nádvorník, M. Surýnek, K. Olejník, V. Novák, J. Wunderlich, F. Trojánek, T. Jungwirth, P. Němec

Abstract: We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations origi… ▽ More We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photo-injected into the system. △ Less

Submitted 30 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Applied 8, 034022 (2017)

Focused issue on antiferromagnetic spintronics: An overview (Part of a collection of reviews on antiferromagnetic spintronics)

Authors: T. Jungwirth, J. Sinova, A. Manchon, X. Marti, J. Wunderlich, C. Felser

Abstract: This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detec… ▽ More This focused issue attempts to provide a comprehensive introduction into the field of antiferromagnetic spintronics. Apart from the brief overview below, it features five review articles. The intention is to cover in a coherent and complementary way key physical aspects of the antiferromagnetic spintronics research. These range from microelectronic memory devices and optical manipulation and detection of antiferromagnetic spins, to the fundamentals of antiferromagnetic dynamics in uniform or spin-textured systems, and to the interplay of antiferromagnetic spintronics with topological phenomena. The antiferromagnetic ordering can take a number of forms including fully compensated collinear, non-collinear, and non-coplanar magnetic lattices, compensated and uncompensated ferrimagnets, or metamagnetic materials hosting an antiferromagnetic to ferromagnetic phase transition. Apart from the variety of distinct magnetic crystal structures, the focused issue also encompasses spintronic phenomena and devices studied in antiferromagnet/ferromagnet heterostructures and in synthetic antiferromagnets. △ Less

Submitted 30 May, 2017; originally announced May 2017.

Comments: 3 pages, 1 figure, Part of a collection of reviews on antiferromagnetic spintronics