Robust luminescence of the silicon-vacancy center in diamond at high temperatures
Authors:
Stefano Lagomarsino,
Federico Gorelli,
Mario Santoro,
Nicole Fabbri,
Ahmed Hajeb,
Silvio Sciortino,
Lara Palla,
Caroline Czelusniak,
Mirko Massi,
Francesco Taccetti,
Lorenzo Giuntini,
Nicla Gelli,
Dmitry Yu Fedyanin,
Francesco Saverio Cataliotti,
Costanza Toninelli,
Mario Agio
Abstract:
We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy of 180 meV that populates a shelving state. Nonetheless, the signal decreased only 50% and 75% with respect to room t…
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We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy of 180 meV that populates a shelving state. Nonetheless, the signal decreased only 50% and 75% with respect to room temperature at 500 K and 700 K, respectively. In addition, the color center is found highly photostable at temperatures exceeding 800 K. The luminescence of this color center is thus extremely robust even at large temperatures and it holds promise for novel diamond-based light-emitting devices.
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Submitted 22 October, 2015;
originally announced October 2015.
