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Strong coupling of monolayer WS2 excitons and surface plasmon polaritons in a planar Ag/WS2 hybrid structure
Authors:
Nicolas Zorn Morales,
Daniel Steffen Rühl,
Sergey Sadofev,
Giovanni Ligorio,
Emil List-Kratochvil,
Günter Kewes,
Sylke Blumstengel
Abstract:
Monolayer (1L) transition metal dichalcogenides (TMDC) are of strong interest in nanophotonics due to their narrow-band intense excitonic transitions persisting up to room temperature. When brought into resonance with surface plasmon polariton (SPP) excitations of a conductive medium opportunities for studying and engineering strong light-matter coupling arise. Here, we consider a most simple geom…
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Monolayer (1L) transition metal dichalcogenides (TMDC) are of strong interest in nanophotonics due to their narrow-band intense excitonic transitions persisting up to room temperature. When brought into resonance with surface plasmon polariton (SPP) excitations of a conductive medium opportunities for studying and engineering strong light-matter coupling arise. Here, we consider a most simple geometry, namely a planar stack composed of a thin silver film, an Al2O3 spacer and a monolayer of WS2. We perform total internal reflection ellipsometry which combines spectroscopic ellipsometry with the Kretschmann-Raether-type surface plasmon resonance configuration. The combined amplitude and phase response of the reflected light at varied angle of incidence proves that despite the atomic thinness of 1L-WS2, the strong coupling (SC) regime between A excitons and SPPs propagating in the thin Ag film is reached. The phasor representation of rho corroborates SC as rho undergoes a topology change indicated by the occurrence of a double point at the cross over from the weak to the strong coupling regime. Our findings are validated by both analytical transfer matrix method calculations and numerical Maxwell simulations. The findings open up new perspectives for applications in plasmonic modulators and sensors benefitting from the tunability of the optical properties of 1L-TMDCs by electric fields, electrostatic doping, light and the chemical environment.
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Submitted 28 June, 2023;
originally announced June 2023.
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Pulsed thermal deposition of binary and ternary transition metal dichalcogenide monolayers and heterostructures
Authors:
Niklas Mutz,
Tino Meisel,
Holm Kirmse,
Soohyung Park,
Nikolai Severin,
Jürgen P. Rabe,
Emil List-Kratochvil,
Norbert Koch,
Christoph Koch,
Sylke Blumstengel,
Sergey Sadofev
Abstract:
Application of transition metal dichalcogenides (TMDC) in photonic, optoelectronic or valleytronic devices requires the growth of continuous monolayers, heterostructures and alloys of different materials in a single process. We present a facile pulsed thermal deposition method which provides precise control over layer thickness and stoichiometry of two-dimensional systems. The versatility of the m…
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Application of transition metal dichalcogenides (TMDC) in photonic, optoelectronic or valleytronic devices requires the growth of continuous monolayers, heterostructures and alloys of different materials in a single process. We present a facile pulsed thermal deposition method which provides precise control over layer thickness and stoichiometry of two-dimensional systems. The versatility of the method is demonstrated on ternary monolayers of Mo$_{1-x}$W$_{x}$S$_{2}$ and on heterostructures combining metallic TaS$_{2}$ and semiconducting MoS$_{2}$ layers. The fabricated ternary monolayers cover the entire composition range of $x$ = 0...1 without phase separation. Band gap engineering and control over the spin-orbit coupling strength is demonstrated by absorption and photoluminescence spectroscopy. Vertical heterostructures are grown without intermixing. The formation of clean and atomically abrupt interfaces is evidenced by high-resolution transmission electron microscopy. Since both the metal components as well as the chalcogenides are thermally evaporated complex alloys and heterostructures can thus be prepared.
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Submitted 11 February, 2019; v1 submitted 19 November, 2018;
originally announced November 2018.
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Direct observation of state-filling at hybrid tin oxide/organic interfaces
Authors:
Ulrich Hörmann,
Stefan Zeiske,
Soohyung Park,
Thorsten Schultz,
Sebastian Kickhöfel,
Ullrich Scherf,
Sylke Blumstengel,
Norbert Koch,
Dieter Neher
Abstract:
Electroluminescence (EL) spectra from hybrid charge transfer excitons at metal oxide/organic type-II heterojunctions exhibit pronounced bias-induced spectral shifts. The reasons for this phenomenon have been discussed controversially and arguments for both electric field-induced effects as well as filling of trap states at the oxide surface have been put forward. Here, we combine the results from…
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Electroluminescence (EL) spectra from hybrid charge transfer excitons at metal oxide/organic type-II heterojunctions exhibit pronounced bias-induced spectral shifts. The reasons for this phenomenon have been discussed controversially and arguments for both electric field-induced effects as well as filling of trap states at the oxide surface have been put forward. Here, we combine the results from EL and photovoltaic measurements to eliminate the disguising effects of the series resistance. For SnOx combined with the conjugated polymer MeLPPP, we find a one-to-one correspondence between the blueshift of the EL peak and the increase of the quasi-Fermi level splitting at the hybrid heterojunction, which we unambiguously assign to state filling. Our data is resembled best by a model considering the combination an exponential density of states with a doped semiconductor.
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Submitted 20 November, 2018; v1 submitted 14 November, 2018;
originally announced November 2018.
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Uncovering the (un-)occupied electronic structure of a buried hybrid interface
Authors:
S. Vempati,
J. -C. Deinert,
L. Gierster,
L. Bogner,
C. Richter,
N. Mutz,
S. Blumstengel,
A. Zykov,
S. Kowarik,
Y. Garmshausen,
J. Hildebrandt,
S. Hecht,
J. Stähler
Abstract:
The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determi…
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The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determine the electronic structure of p-quinquephenyl pyridine (5P-Py) adsorbed on ZnO(10-10). The parent anchoring group, pyridine, significantly lowers the work function by up to 2.9 eV and causes an occupied in-gap state (IGS) directly below the Fermi level $E_\text{F}$. Adsorption of upright-standing 5P-Py also leads to a strong work function reduction of up to 2.1 eV and to a similar IGS. The latter is then used as an initial state for the transient population of three normally unoccupied molecular levels through optical excitation and, due to its localization right at the o/i interface, provides interfacial sensitivity, even for thick 5P-Py films. We observe two final states above the vacuum level and one bound state at around 2 eV above $E_\text{F}$, which we attribute to the 5P-Py LUMO. By the separate study of anchoring group and organic dye combined with the exploitation of the occupied IGS for selective interfacial photoexcitation this work provides a new pathway for characterizing the electronic structure at buried o/i interfaces.
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Submitted 2 November, 2018;
originally announced November 2018.
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Nanoscale Transport of Surface Excitons at the Interface between ZnO and a Molecular Monolayer
Authors:
Sebastian Friede,
Sergei Kuehn,
Sergey Sadofev,
Sylke Blumstengel,
Fritz Henneberger,
Thomas Elsaesser
Abstract:
Excitons play a key role for the optoelectronic properties of hybrid systems. We apply near-field scanning optical microscopy (NSOM) with a $100\,\text{-nm}$ spatial resolution to study the photoluminescence of surface excitons (SX) in a $20\,\text{nm}$ thick ZnO film capped with a monolayer of stearic acid molecules. Emission from SX, donor-bound (DX), and - at sample temperatures…
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Excitons play a key role for the optoelectronic properties of hybrid systems. We apply near-field scanning optical microscopy (NSOM) with a $100\,\text{-nm}$ spatial resolution to study the photoluminescence of surface excitons (SX) in a $20\,\text{nm}$ thick ZnO film capped with a monolayer of stearic acid molecules. Emission from SX, donor-bound (DX), and - at sample temperatures $T>20\,\text{K}$ - free (FX) excitons is separated in steady-state and time-resolved photoluminescence spectra. The $4\,\text{meV}$ broad smooth envelope of SX emission at $T<10\,\text{K}$ points to an inhomogeneous distribution of SX transition energies and spectral diffusion caused by diffusive SX transport on a $50\,\text{nm}$ scale with a SX diffusion coefficient of $D(T<10 K)=0.30\,\text{cm$^2$/s}$.
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Submitted 7 January, 2015;
originally announced January 2015.
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Calculating optical absorption spectra of thin polycrystalline films: Structural disorder and site-dependent van der Waals interaction
Authors:
Jörg Megow,
Thomas Körzdörfer,
Thomas Renger,
Mino Sparenberg,
Sylke Blumstengel,
Fritz Henneberger,
Volkhard May
Abstract:
We propose a new approach for calculating the change of the absorption spectrum of a molecule when moved from the gas phase to a crystalline morphology. The so-called gas-to-crystal shift $Δ{\cal E}_m$ is mainly caused by dispersion effects and depends sensitively on the molecule's specific position in the nanoscopic setting. Using an extended dipole approximation, we are able to divide…
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We propose a new approach for calculating the change of the absorption spectrum of a molecule when moved from the gas phase to a crystalline morphology. The so-called gas-to-crystal shift $Δ{\cal E}_m$ is mainly caused by dispersion effects and depends sensitively on the molecule's specific position in the nanoscopic setting. Using an extended dipole approximation, we are able to divide $Δ{\cal E}_m= -Q W_{m}$ in two factors where $Q$ depends only on the molecular species and accounts for all non-resonant electronic transitions contributing to the dispersion, while $W_m$ is a sum running over the position of all molecules expressing the site-dependence of the shift in a given molecular structure. The ability of our approach to predict absorption spectra is demonstrated using the example of polycrystalline films of 3,4,9,10-perylene-tetracarboxylic-diimide (PTCDI).
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Submitted 11 November, 2014;
originally announced November 2014.
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Space Charge Transfer in Hybrid Inorganic/Organic Systems
Authors:
Yong Xu,
Oliver T. Hofmann,
Raphael Schlesinger,
Stefanie Winkler,
Johannes Frisch,
Jens Niederhausen,
Antje Vollmer,
Sylke Blumstengel,
Fritz Henneberger,
Norbert Koch,
Patrick Rinke,
Matthias Scheffler
Abstract:
We discuss density functional theory calculations of hybrid inorganic/organic systems (HIOS) that explicitly include the global effects of doping (i.e. position of the Fermi level) and the formation of a space-charge layer. For the example of tetrafluoro-tetracyanoquinodimethane (F4TCNQ) on the ZnO(000$\bar{1}$) surface we show that the adsorption energy and electron transfer depend strongly on th…
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We discuss density functional theory calculations of hybrid inorganic/organic systems (HIOS) that explicitly include the global effects of doping (i.e. position of the Fermi level) and the formation of a space-charge layer. For the example of tetrafluoro-tetracyanoquinodimethane (F4TCNQ) on the ZnO(000$\bar{1}$) surface we show that the adsorption energy and electron transfer depend strongly on the ZnO doping. The associated work function changes are large, for which the formation of space-charge layers is the main driving force. The prominent doping effects are expected to be quite general for charge-transfer interfaces in HIOS and important for device design.
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Submitted 21 June, 2013; v1 submitted 19 June, 2013;
originally announced June 2013.
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Electrostatic Field Driven Alignment of Organic Oligomers on ZnO Surfaces
Authors:
F. Della Sala,
S. Blumstengel,
F. Henneberger
Abstract:
We study the physisorption of organic oligomers on the ZnO($10\bar{1}0$) surface using first-principles density-functional theory and non-empirical embedding methods. We find that both in-plane location and orientation of the molecules are completely determined by the coupling of their quadrupole moments to the periodic dipolar electric field present at the semiconductor surface. The adsorption is…
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We study the physisorption of organic oligomers on the ZnO($10\bar{1}0$) surface using first-principles density-functional theory and non-empirical embedding methods. We find that both in-plane location and orientation of the molecules are completely determined by the coupling of their quadrupole moments to the periodic dipolar electric field present at the semiconductor surface. The adsorption is associated with the formation of a molecular dipole moment perpendicular to the surface, which bears an unexpected linear relation to the molecule-substrate interaction energy. Long oligomers such as sexiphenyl become well-aligned with stabilization energies of several 100 meV along rows of positive electric field, in full agreement with recent experiments. These findings define a new route towards the realization of highly-ordered self-assembled arrays of oligomers/polymers on ZnO($10\bar{1}0$) and similar surfaces.
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Submitted 21 January, 2011;
originally announced January 2011.
