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Condensed Matter > Materials Science

arXiv:2108.00863 (cond-mat)
[Submitted on 29 Jul 2021]

Title:Nonlinear charge transport in highly polar semiconductors: GaN, AlN, InN and GaAs

Authors:Clóves Gonçalves Rodrigues, Roberto Luzzi
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Abstract:In this paper, we present a collection of results focussing on the transport properties of doped direct-gap inverted-band highly polar III-nitride semiconductors (GaN, AlN, InN) and GaAs in the transient and steady state, calculated by using nonlinear quantum kinetic theory based on a non-equilibrium statistical ensemble formalism (NESEF). In the present paper, these results are compared with calculations usingMonteCarlo modelling simulations and experimental measurements. Both n-type and p-type materials, in the presence of intermediate to high electric fields, are considered for several temperatures and carrier this http URL agreement between the results obtained using nonlinear quantum kinetic theory, with those ofMonte Carlo calculations and experimental data is remarkably good, thus satisfactorily validating the NESEF.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2108.00863 [cond-mat.mtrl-sci]
  (or arXiv:2108.00863v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2108.00863
Journal reference: Pramana J. Phys., vol. 95, p. 44, 2021
Related DOI: https://doi.org/10.1007/s12043-021-02077-1

Submission history

From: Cloves Rodrigues [view email]
[v1] Thu, 29 Jul 2021 01:06:14 UTC (4,433 KB)
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