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CERN Document Server Sök i 2,048 journaler efter:  1 - 10nästaslut  gå till journal: Sökningen tog 0.17 sekunder. 
1.
(100)
Annealing Studies of magnetic Czochralski silicon radiation detectors / Pellegrini, G ; Campabadal, F ; Fleta, C ; Lozano, M ; Rafí, J M ; Ullán, M
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrónica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic and they have a nominal resistivity of 1 kΩ cm. [...]
2005 - Published in : Nucl. Instrum. Methods Phys. Res., A 552 (2005) 27-33
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2.
(91)
Characterization of magnetic Czochralski silicon radiation detectors / Pellegrini, G (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.)
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrònica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic OYJ and they have a nominal resistivity of $1 \rm{k} \Omega cm$. [...]
2005 - 9 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 548 (2005) 355-363
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3.
(45)
Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors / Martínez, C ; Rafí, J M ; Lozano, M ; Campabadal, F ; Santander, J ; Fonseca, L ; Ullán, M ; Moreno, A J D
This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full depletion voltage and leakage current with fluence as well as their annealing behavior with time were studied. [...]
2002 - Published in : IEEE Trans. Nucl. Sci. 49 (2002) 1377-82
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4.
(39)
Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors / Martínez, C ; Rafí, J M ; Lozano, M ; Campabadal, F ; Santander, J ; Fonseca, L ; Ullán, M ; Moreno, A
This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at IMB-CNM (Institut de Microelectronica de Barcelona) subjected to proton irradiation at CERN for high energy physics applications. The evolution of full depletion voltage and leakage current with fluence, as well as their annealing behaviour with time, were studied. [...]
2002
In : 6th European Conference On Radiation And Its Effects On Components And Systems, Grenoble, France, 10 - 13 Sep 2001, pp.91-97
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5.
(26)
Characterisation of p-type detectors for the future Super-LHC / Lacasta, C (IFIC, Valencia, Spain) ; Campabadal, F (CNM-IMB, Barcelona, Spain) ; Fleta, C (CNM-IMB, Barcelona, Spain) ; García, C (IFIC, Valencia, Spain) ; Lozano, M (CNM-IMB, Barcelona, Spain) ; Martí, S (IFIC, Valencia, Spain) ; Miñano, M (IFIC, Valencia, Spain) ; Pellegrini, G (CNM-IMB, Barcelona, Spain) ; Rafí, J M (CNM-IMB, Barcelona, Spain) ; Ullán, M (CNM-IMB, Barcelona, Spain)
2007 - Published in : Nucl. Instrum. Methods Phys. Res., A 579 (2007) 604-607
In : 6th International "Hiroshima" Symposium on the Development and Applications of Semiconductor Tracking Detectors, Carmel, CA, USA, 11 - 15 Sep 2006, pp.604-607
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6.
(22)
Space charge sign inversion and electric field reconstruction in 24 GeV/c proton-irradiated MCz Si p$^+$-n(TD)-n$^+$ detectors processed via thermal donor introduction / Li, Z (Brookhaven) ; Verbitskaya, E (Brookhaven ; Ioffe Phys. Tech. Inst.) ; Carini, G (Brookhaven) ; Chen, W (Brookhaven) ; Eremin, V (Ioffe Phys. Tech. Inst.) ; Gul, R (Brookhaven) ; Harkonen, J (Helsinki Inst. of Phys. ; CERN) ; Li, M (Brookhaven)
The aim of this study is the evaluation of radiation effects in detectors based on p-type magnetic czochralski (MCz) Si that was converted to n-type by thermal donor (TD) introduction. As-processed p+-p-n+ detectors were annealed at 430 °C resulting in p+-n(TD)-n+ structures. [...]
2009 - Published in : Nucl. Instrum. Methods Phys. Res., A 598 (2009) 416-421
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7.
(21)
Technology development of p-type microstrip detectors with radiation hard p-spray isolation / Pellegrini, G (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.) ; Díez, S (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.)
A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. [...]
2006 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 566 (2006) 360-365
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8.
(18)
Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons / Holmkvist, William (CERN)
Silicon detectors is the main component in the pixel detectors in the ATLAS experiment at CERN in order to detect the particles and recreate their tracks after a proton-proton collision [...]
CERN-STUDENTS-Note-2014-135. - 2014
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9.
(17)
A comparison between irradiated magnetic Czochralski and float zone silicon detectors using the transient current technique / Bates, A G (Glasgow U. ; CERN) ; Moll, M (CERN)
Magnetic Czochralski (MCz) silicon has recently become a promising material for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A thorough study of 24 GeV/$c$ proton-irradiated p$^+$-in-n Float Zone (FZ) , Diffusion Oxygenated Float Zone (DOFZ) and MCz silicon detectors has been conducted using the standard radiation damage characterization tools $IV$ and $CV$ , the Transient Current Technique (TCT) and annealing studies. [...]
2005 - 12 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 555 (2005) 113-124
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10.
(17)
RD50 Status Report 2006 : Radiation hard semiconductor devices for very high Luminosity colliders / RD50 Collaboration
CERN-LHCC-2007-005 ; LHCC-RD-013. - 2007. - 76 p.
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