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Properties of low-lying intruder states in $^{34}$Al and $^{34}$Si sequentially populated in $\beta$-decay of $^{34}$Mg / Negoita, F (IFIN-HH, Bucharest, Romania) ; Grevy, S (CENBG, Bordeaux, France) ; Borcea, C (IFIN-HH, Bucharest, Romania) ; Dessagne, Ph (IPHC, Strabourg, France) ; Stora, T (CERN) ; Daugas, JM (CEA, DAM, DIF Arpajon, France) ; Gaudefroy, L (CEA, DAM, DIF Arpajon, France) ; Sorlin, O (GANIL, Caen, France) ; Blank, B (CENBG, Bordeaux, France) ; Giovinazzo, J (CENBG, Bordeaux, France) et al.
CERN-INTC-2011-050 ; INTC-P-314. - 2011.
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