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Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Faccio, Federico (CERN) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Baschirotto, Andrea (Milan Bicocca U. ; INFN, Milan Bicocca) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO$_2$) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various sizes provide insight into the TID-induced lateral parasitic devices, which contribute the most to the significant increase up to four orders of magnitude in the drain leakage current. [...]
2018 - 10 p.
- Published in : IEEE Trans. Nucl. Sci. 66 (2018) 38-47
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Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Pezzotta, Alessandro (Ecole Polytechnique, Lausanne) ; Bruschini, Claudio (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Mattiazzo, Serena (U. Padua (main)) ; Baschirotto, Andrea (Milan Bicocca U.) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex interplay of oxide and interface charge trapping relevant to the gate-related dielectrics and the shallow trench isolation. [...]
2017 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 64 (2017) 2639-2647
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3.
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Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs
/ Zhang, C M (Ecole Polytechnique, Lausanne) ; Jazaeri, F (Ecole Polytechnique, Lausanne) ; Pezzotta, A (Ecole Polytechnique, Lausanne) ; Bruschini, C (Ecole Polytechnique, Lausanne) ; Borghello, G (CERN ; U. Udine (main)) ; Mattiazzo, S (U. Padua (main)) ; Baschirotto, A (INFN, Milan Bicocca ; Milan Bicocca U.) ; Enz, C (Ecole Polytechnique, Lausanne)
This paper uses the simplified charge-based EKV MOSFET model for studying the effects of total ionizing dose (TID) on analog parameters and figures-of-merit (FoMs) of 28nm bulk MOSFETs. These effects are demonstrated to be fully captured by the five key parameters of the simplified EKV model. [...]
2017 - 4 p.
- Published in : 10.1109/ESSDERC.2017.8066584
In : 47th European Solid-State Device Research Conference, Leuven, Belgium, 11 - 14 Sep 2017, pp.30-33
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4.
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Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC
/ Pezzotta, A (Milan Bicocca U. ; Ecole Polytechnique, Lausanne ; INFN, Milan Bicocca) ; Zhang, C M (Ecole Polytechnique, Lausanne) ; Jazaeri, F (Ecole Polytechnique, Lausanne) ; Bruschini, C (Ecole Polytechnique, Lausanne) ; Borghello, G (CERN ; U. Udine (main)) ; Faccio, F (CERN) ; Mattiazzo, S (Padua U.) ; Baschirotto, A (Milan Bicocca U.) ; Enz, C (Ecole Polytechnique, Lausanne)
The Large Hadron Collider (LHC) running at CERN will soon be upgraded to increase its luminosity giving rise to radiations reaching the level of GigaRad Total Ionizing Dose (TID). This paper investigates the impact of such high radiation on transistors fabricated in a commercial 28 nm bulk CMOS process with the perspective of using it for the future silicon-based detectors. [...]
2016 - 4 p.
- Published in : 10.1109/ESSDERC.2016.7599608
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5.
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GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
/ Zhang, C M (Ecole Polytechnique, Lausanne) ; Jazaeri, F (Ecole Polytechnique, Lausanne) ; Pezzotta, A (Ecole Polytechnique, Lausanne) ; Bruschini, C (Ecole Polytechnique, Lausanne) ; Borghello, G (CERN ; U. Udine (main)) ; Faccio, F (CERN) ; Mattiazzo, S (U. Padua (main)) ; Baschirotto, A (Milan Bicocca U.) ; Enz, C (Ecole Polytechnique, Lausanne)
The DC performance of both $n$- and $p$MOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS technology in the forthcoming upgrade of the Large Hadron Collider at CERN. [...]
2017 - 4 p.
- Published in : 10.1109/NSSMIC.2016.8069869
In : IEEE Nuclear Science Symposium and Medical Imaging Conference, Strasbourg, France, 29 Oct - 6 Nov 2016, pp.8069869
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6.
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A generalized EKV charge-based MOSFET model including oxide and interface traps
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN) ; Mattiazzo, Serena (CERN) ; Baschirotto, Andrea (INFN, Padua) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges
in the oxide bulk and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface trapped charges, the mobile charge density can still be linearized but with respect to both the surface potential and the channel voltage. [...]
2021 - 9 p.
- Published in : Solid State Electron. 177 (2021) 107951
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Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs
/ Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Mattiazzo, Serena (INFN, Padua ; U. Padua (main)) ; Baschirotto, Andrea (INFN, Milan Bicocca ; Milan Bicocca U.) ; Enz, Christian (Ecole Polytechnique, Lausanne)
/ScalTech28project
This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems..
2019 - 3 p.
- Published in : 10.1109/NSSMIC.2018.8824379
In : 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2018), Sydney, Australia, 10 - 17 Nov 2018, pp.8824379
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8.
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Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs
/ Martinella, C (CERN ; Jyvaskyla U.) ; Stark, R (Zurich, ETH) ; Ziemann, T (Zurich, ETH) ; Alia, R G (CERN) ; Kadi, Y (CERN) ; Grossner, U (Zurich, ETH) ; Javanainen, A (Jyvaskyla U. ; Vanderbilt U. (main))
High sensitivity of silicon-carbide (SiC) power MOSFETs has been observed under heavy-ion irradiation, leading to permanent increase of drain and gate leakage currents. The electrical postirradiation analysis confirmed the degradation of the gate oxide and the blocking capability of the devices. [...]
2019 - 8 p.
- Published in : IEEE Trans. Nucl. Sci. 66 (2019) 1702-1709
In : Conference on Radiation and its Effects on Components and Systems, Gothenburg, Sweden, 16 - 21 Sep 2018, pp.1702-1709
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9.
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Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses
/ Borghello, Giulio (CERN ; U. Udine (main)) ; Faccio, Federico (CERN) ; Lerario, Edoardo (CERN ; U. Salento, Lecce (main)) ; Michelis, Stefano (CERN) ; Kulis, Szymon (CERN) ; Fleetwood, Daniel M (Vanderbilt U. (main)) ; Schrimpf, Ronald D (Vanderbilt U. (main)) ; Gerardin, Simone (U. Padua (main)) ; Paccagnella, Alessandro (U. Padua (main)) ; Bonaldo, Stefano (U. Padua (main))
The radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is dominated by ionization mechanisms in thick isolation oxides surrounding the transistors. Recent results in 65-nm FETs demonstrated that performance degradation in ultrahigh total ionizing dose (TID) experiments is due to defects in the isolation shallow trench isolation oxide or in the materials composing the lightly doped drain spacers. [...]
2018 - 6 p.
- Published in : IEEE Trans. Nucl. Sci. 65 (2018) 1482-1487
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10.
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A Radiation-Tolerant 25.6-Gb/s High-Speed Transmitter in 28-nm CMOS With a Tolerance of 1 Grad
/ Klekotko, A (CERN ; Leuven U.) ; Biereigel, S (CERN) ; Baszczyk, M (CERN) ; Moreira, P (CERN) ; Martina, F (CERN) ; Prinzie, J (Leuven U.) ; Kulis, S (Leuven U.)
This article presents a 25.6-Gbit $\cdot $ s−1 high-speed transmitter (HST) manufactured using 28-nm CMOS technology. The HST macroblock includes an all-digital phase-locked loop (ADPLL), duty cycle corrector (DCC) circuit, data pattern generator, serializer, and a driver capable of driving the differential 100- $\Omega $ line as well as a silicon photonics (SiPh) ring modulator (RM). [...]
2024 - 9 p.
- Published in : IEEE Trans. Nucl. Sci. 71 (2024) 2124-2132
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