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CERN Document Server 2,041 elementer funnet  1 - 10nesteslutt  gå til element: Søket tok 0.28 sekunder. 
1.
(100)
Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors / Martínez, C ; Rafí, J M ; Lozano, M ; Campabadal, F ; Santander, J ; Fonseca, L ; Ullán, M ; Moreno, A
This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at IMB-CNM (Institut de Microelectronica de Barcelona) subjected to proton irradiation at CERN for high energy physics applications. The evolution of full depletion voltage and leakage current with fluence, as well as their annealing behaviour with time, were studied. [...]
2002
In : 6th European Conference On Radiation And Its Effects On Components And Systems, Grenoble, France, 10 - 13 Sep 2001, pp.91-97
Detaljert visning - Lignende elementer
2.
(91)
Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors / Martínez, C ; Rafí, J M ; Lozano, M ; Campabadal, F ; Santander, J ; Fonseca, L ; Ullán, M ; Moreno, A J D
This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full depletion voltage and leakage current with fluence as well as their annealing behavior with time were studied. [...]
2002 - Published in : IEEE Trans. Nucl. Sci. 49 (2002) 1377-82
Detaljert visning - Lignende elementer
3.
(21)
Annealing Studies of magnetic Czochralski silicon radiation detectors / Pellegrini, G ; Campabadal, F ; Fleta, C ; Lozano, M ; Rafí, J M ; Ullán, M
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrónica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic and they have a nominal resistivity of 1 kΩ cm. [...]
2005 - Published in : Nucl. Instrum. Methods Phys. Res., A 552 (2005) 27-33
Detaljert visning - Lignende elementer
4.
(18)
Comparison of signals obtained from oxygenated and non-oxygenated silicon microstrip detectors after irradiation to $3*10^{14}p cm ^{-2}$ / Robinson, D ; Allport, P P ; Beck, G A ; Carter, A A ; Carter, J R ; Casse, G L ; Morgan, D
Full size silicon microstrip detectors have been prototyped for the LHC and fabricated on both oxygenated and non-oxygenated substrate material. The detectors were irradiated with protons to 3*10/sup 14/ p cm/sup -2/ and their signals compared as a function of bias voltage after short-term and long-term annealing. [...]
2001 - Published in : Nucl. Instrum. Methods Phys. Res., A 461 (2001) 226-8
Detaljert visning - Lignende elementer
5.
(18)
Characterization of p-in-n ATLAS silicon microstrip detectors fabricated by Hamamatsu Photonics and irradiated with 24 GeV/c protons to $3*10^{14} pcm^{-2}$ / Morgan, D ; Buttar, C M ; Carter, J R ; Dawson, I ; Hara, K ; Harper, R ; Iwata, Y ; Kohriki, T ; Kondo, T ; Ohsugi, T et al.
P-in-n silicon microstrip prototype detectors for the ATLAS experiment at CERN have been designed and manufactured by Hamamatsu Photonics. Detectors were irradiated at the CERN Proton Synchrotron facility to a fluence of 3*10/sup 14/ pcm/sup -2/, corresponding to the total fluence anticipated after ten years of operation in the ATLAS semiconductor tracker. [...]
1999 - Published in : Nuovo Cimento A 112 (1999) 1245-51
Detaljert visning - Lignende elementer
6.
(18)
Characterization of magnetic Czochralski silicon radiation detectors / Pellegrini, G (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.)
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrònica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic OYJ and they have a nominal resistivity of $1 \rm{k} \Omega cm$. [...]
2005 - 9 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 548 (2005) 355-363
Detaljert visning - Lignende elementer
7.
(18)
Radiation hardness of oxygenated microstrip detectors read out with LHC speed electronics / Allport, P P ; Booth, P S L ; Bowcock, T J V ; Casse, G L ; Greenall, A ; Martí i García, S ; Jackson, J N ; Jones, T J ; Reilly, M ; Smith, A N et al.
Full-size and miniature LHC detectors fabricated on 4 and 6 inch wafers have been processed using oxygenated and non-oxygenated substrates. After irradiation to 3*10/sup 14/ p/cm/sup 2/ and short- term annealing, these detectors have been studied in terms of their charge collection as a function of depletion voltage with LHC-speed analogue electronics. [...]
2001 - Published in : IEEE Trans. Nucl. Sci. 48 (2001) 1007-11
In : 47th IEEE Nuclear Science Symposium and Medical Imaging Conference, Lyons, France, 15 - 20 Oct 2000, pp.3/83-7 (v.1)
47th IEEE Nuclear Science Symposium and Medical Imaging Conference, Lyons, France, 15 - 20 Oct 2000, pp.1007-11
Detaljert visning - Lignende elementer
8.
(17)
Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon / Casse, G L ; Allport, P P ; Hanlon, M
The degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials. Standard high-grade p-type and n-type substrates and oxygenated n-type substrates have been used. [...]
2000
In : 5th European Conference on Radiation and its Effects on Components and Systems, Fontevraud, France, 13 - 17 Sep 1999, pp.114-19
Detaljert visning - Lignende elementer
9.
(16)
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons / Härkönen, J ; Alanko, T ; Heikkilä, P ; Kallijärvi, S ; Laitinen, P ; Lassila-Perini, K M ; Nummela, S ; Nysten, J ; Ovchinnikov, V ; Palmu, L et al.
Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. [...]
2003 - Published in : Nucl. Instrum. Methods Phys. Res., A 512 (2003) 85-91
Detaljert visning - Lignende elementer
10.
(15)
Lithium ion irradiation of standard and oxygenated silicon diodes / Candelori, A ; Betta, G F D ; Bisello, D ; Giubilato, P ; Kaminski, A ; Litovchenko, A P ; Lozano, A ; Petrie, J R ; Rando, R ; Ullán, M et al.
The next generation silicon detectors for future very high luminosity colliders or a possible LHC upgrade scenario will require radiation- hard detectors for fluences up to 10/sup 16/ 1-MeV equivalent neutrons/cm/sup 2/. These high fluences present strong constraints because long irradiation times are required at the currently available proton irradiation facilities. [...]
2004 - Published in : IEEE Trans. Nucl. Sci. 51 (2004) 2865-2871
In : 7th European Conference On Radiation And Its Effects On Components And Systems, Noordwijk, The Netherlands, 15 - 20 Sep 2003, pp.393-399
Detaljert visning - Lignende elementer

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