1.
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Characterisation of p-type detectors for the future Super-LHC
/ Lacasta, C (IFIC, Valencia, Spain) ; Campabadal, F (CNM-IMB, Barcelona, Spain) ; Fleta, C (CNM-IMB, Barcelona, Spain) ; García, C (IFIC, Valencia, Spain) ; Lozano, M (CNM-IMB, Barcelona, Spain) ; Martí, S (IFIC, Valencia, Spain) ; Miñano, M (IFIC, Valencia, Spain) ; Pellegrini, G (CNM-IMB, Barcelona, Spain) ; Rafí, J M (CNM-IMB, Barcelona, Spain) ; Ullán, M (CNM-IMB, Barcelona, Spain)
2007
- Published in : Nucl. Instrum. Methods Phys. Res., A 579 (2007) 604-607
In : 6th International "Hiroshima" Symposium on the Development and Applications of Semiconductor Tracking Detectors, Carmel, CA, USA, 11 - 15 Sep 2006, pp.604-607
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2.
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Technology development of p-type microstrip detectors with radiation hard p-spray isolation
/ Pellegrini, G (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.) ; Díez, S (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.)
A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. [...]
2006 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 566 (2006) 360-365
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3.
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4.
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Characterization of magnetic Czochralski silicon radiation detectors
/ Pellegrini, G (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.)
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrònica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic OYJ and they have a nominal resistivity of $1 \rm{k} \Omega cm$. [...]
2005 - 9 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 548 (2005) 355-363
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5.
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6.
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Design and performance of the ABCD3TA ASIC for readout of silicon strip detectors in the ATLAS semiconductor tracker
/ Campabadal, F (Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona, Spain) ; Fleta, C (Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona, Spain) ; Key, M (Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona, Spain) ; Lozano, M (Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona, Spain) ; Martínez, C (Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona, Spain) ; Pellegrini, G (Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona, Spain) ; Rafí, J M (Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona, Spain) ; Ullán, M (Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona, Spain) ; Johansen, L G (University of Bergen, Bergen, Norway) ; Mohn, B (University of Bergen, Bergen, Norway) et al.
2005
- Published in : Nucl. Instrum. Methods Phys. Res., A 552 (2005) 292-328
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7.
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First double-sided 3-D detectors fabricated at CNM-IMB
/ Pellegrini, G (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) ; Bates, R (Glasgow U.) ; Fleta, C (Glasgow U.) ; Pennicard, D (Glasgow U.)
The first results on double-sided three-dimensional (3-D) silicon radiation detectors are reported in this paper. The detector consists of a three-dimensional array of electrodes that penetrate into the detector bulk with the anode and cathode electrodes etched from opposite sides of the substrate. [...]
2008 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 592 (2008) 38-43
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8.
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ROSE activities at CNM during 1999 and 2000
/ Martínez, C ; Lozano, M ; Fonseca, L ; Campabadal, F ; Rafí, J M ; Fuster, J A ; Costa, M
2000
In : 5th Rose Workshop on Radiation Hardening of Silicon Detectors, CERN, Geneva, Switzerland, 16 - 17 Mar 2000, pp.111-122
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9.
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Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors
/ Martínez, C ; Rafí, J M ; Lozano, M ; Campabadal, F ; Santander, J ; Fonseca, L ; Ullán, M ; Moreno, A J D
This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full depletion voltage and leakage current with fluence as well as their annealing behavior with time were studied. [...]
2002
- Published in : IEEE Trans. Nucl. Sci. 49 (2002) 1377-82
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10.
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Novel results on fluence dependence and annealing behaviour of oxygenated and non-oxygenated silicon detectors
/ Martínez, C ; Rafí, J M ; Lozano, M ; Campabadal, F ; Santander, J ; Fonseca, L ; Ullán, M ; Moreno, A
This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at IMB-CNM (Institut de Microelectronica de Barcelona) subjected to proton irradiation at CERN for high energy physics applications. The evolution of full depletion voltage and leakage current with fluence, as well as their annealing behaviour with time, were studied. [...]
2002
In : 6th European Conference On Radiation And Its Effects On Components And Systems, Grenoble, France, 10 - 13 Sep 2001, pp.91-97
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