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CERN Document Server Pronađeno je 2,046 zapisa  1 - 10slijedećikraj  idi na zapis: Pretraživanje je potrajalo 0.45 sekundi 
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Extending a 65nm CMOS process design kit for high total ionizing dose effects / Nikolaou, Aristeidis (Natl. Tech. U., Athens) ; Bucher, Matthias (Natl. Tech. U., Athens) ; Makris, Nikos (Natl. Tech. U., Athens) ; Papadopoulou, Alexia (Natl. Tech. U., Athens) ; Chevas, Loukas (Natl. Tech. U., Athens) ; Borghello, Giulio (Udine U.) ; Koch, Henri D (U. Mons) ; Kloukinas, Kostas (CERN) ; Poikela, Tuomas S (CERN) ; Faccio, Federico (CERN)
Standard CMOS Process Design Kits (PDKs) do not address degradation the technology incurs when exposed to high Total Ionizing Dose (TID). Front-end electronics for the High-Luminosity Large Hadron Collider are expected to be exposed up to ten-fold doses. [...]
2018 - 4 p. - Published in : 10.1109/MOCAST.2018.8376561
In : 7th International Conference on Modern Circuits and Systems Technologies, Thessaloniki, Greece, 7 - 9 May 2018
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Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS / Chevas, Loukas (Natl. Tech. U., Athens) ; Nikolaou, Aristeidis (Natl. Tech. U., Athens) ; Bucher, Matthias (Natl. Tech. U., Athens) ; Makris, Nikolaos (Natl. Tech. U., Athens) ; Papadopoulou, Alexia (Natl. Tech. U., Athens) ; Zografos, Apostolos (Natl. Tech. U., Athens) ; Borghello, Giulio (Udine U.) ; Koch, Henri D (U. Mons) ; Faccio, Federico (CERN)
Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages among cost, performance, and resilience to high Total Ionizing Dose (TID). [...]
2018 - 6 p. - Published in : 10.23919/MIXDES.2018.8436809
In : 25th International Conference on Mixed Design of Integrated Circuits and System, Gdynia, Poland, 21 - 23 Jun 2018, pp.313-318
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Characterization of a commercial 65 nm CMOS technology for SLHC applications / Bonacini, S (CERN) ; Valerio, P. (CERN; Rome U.) ; Avramidou, R (Natl. Tech. U., Athens) ; Ballabriga, R (CERN) ; Faccio, F (CERN) ; Kloukinas, K (CERN) ; Marchioro, A (CERN)
The radiation characteristics with respect to Total Ionizing Dose (TID) and Single-Event Upsets (SEUs) of a 65 nm CMOS technology have been investigated. Single transistor structures of a variety of dimensions and several basic circuits were designed and fabricated. [...]
AIDA-PUB-2012-002.- Geneva : CERN, 2012 - Published in : JINST 7 (2012) P01015 Fulltext: PDF; IOP Open Access article: PDF;
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Generic Analog 8 Bit DAC IP Block in 28nm CMOS for the High Energy Physics Community / Piller, Markus (CERN ; Graz, Tech. U.) ; Ballabriga, Rafael (CERN) ; Bandi, Franco Nahuel (CERN) ; Borghello, Giulio (CERN) ; Ceresa, Davide (CERN) ; Pejasinovic, Risto (CERN) ; Sriskaran, Viros (CERN) ; Michalowska-Forsyth, Alicja (Graz, Tech. U.) ; Deutschmann, Bernd (Graz, Tech. U.)
The High Energy Physics (HEP) microelectronic design community is leading a CMOS technology change from Application Specific Integrated Circuit (ASIC) designs in 130nm and 65nm to 28nm for the future upgrades of the High Luminosity Large Hadron Collider (LHC). The technology change to a newer and one of the last planar bulk technologies allows benefiting from advances like higher intrinsic density and speed. [...]
2022 - 4 p. - Published in : 10.1109/Austrochip56145.2022.9940783
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DRAD results obtained during irradiation campaigns / Jara Casas, Luis Miguel (CERN) /RD53 Collaboration
The DRAD chip was designed with the aim of studying the impact of high radiation levels on digital electronics in 65nm CMOS technology, A description of the chip and a summary of the results obtained in the testing is shown in this document. Results cover campaigns after irradiation up to total ionizing doses of 200 Mrad and 500 Mrad at different temperatures. [...]
CERN-RD53-PUB-20-001.- Geneva : CERN, 2020 - 210. DRAD chip test results report: PDF; Results of the LPGBT test structure, 200Mrad -20C:: PDF; Results of the LPGBT test structure, 200Mrad room temperature: PDF; Results of the LPGBT test structure, 500Mrad room temperature: PDF;
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Effects of Ultra-High Total Ionizing Dose in Nanoscale Bulk CMOS Technologies / Koch, Henri Dariusz
Particle accelerators are an excellent instrument to investigate at the smallest scale in our universe [...]
CERN-THESIS-2018-184 - 95 p.

Fulltext
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7.
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Ionizing Radiation Effects in Silicon Photonics Modulators / Lalovic, Milana (CERN ; Belgrade U.) ; Scarcella, Carmelo (CERN) ; Bulling, Anthony (CERN) ; Detraz, Stephane (CERN) ; Marcon, Leonardo (CERN) ; Olantera, Lauri (CERN) ; Prousalidi, Theoni (CERN ; Natl. Tech. U., Athens) ; Sandven, Ulrik (CERN) ; Sigaud, Christophe (CERN) ; Soos, Csaba (CERN) et al.
Silicon photonics (SiPh) shows considerable potential as a radiation-hard technology for building the optical data transmission links for future high-energy physics (HEP) experiments at CERN. Optical modulators are a key component of optical links, which will need to withstand radiation doses in excess of 10 MGy. [...]
2022 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 69 (2022) 1521-1526 Fulltext: PDF;
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A 1$\mu$W Radiation-Hard Front-End in a 0.18-$\mu$m CMOS Process for the MALTA2 Monolithic Sensor / Piro, F (CERN ; Ecole Polytechnique, Lausanne) ; Allport, P (Birmingham U.) ; Asensi, I (CERN) ; Berdalovic, I (CERN ; U. Zagreb (main)) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Cardella, R (CERN ; U. Geneva (main)) ; Charbon, E (Montreal, Ecole Polytechnique) ; Dachs, F (CERN) ; Dao, V (CERN) et al.
In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance (<5 fF) and allows full CMOS in-pixel circuitry. [...]
2022 - 11 p. - Published in : IEEE Trans. Nucl. Sci.
- Published in : (2022) Fulltext: PDF;
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9.
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A 65 nm Rad-Hard Bandgap Voltage Reference for LHC Environment / Vergine, Tommaso (Pavia U.) ; De Matteis, Marcello (Milan Bicocca U.) ; Michelis, Stefano (CERN) ; Traversi, Gianluca (Bergamo U.) ; De Canio, F (Pavia U.) ; Baschirotto, Andrea (Milan Bicocca U.)
A radiation-hard BGR (bandgap voltage reference) circuit is here presented. It's able to maintain the output voltage accuracy over process, voltage, and temperature (PVT) variations, combined with extremely high total-ionizing-dose (up to 800 Mrad (SiO2)), as required by the next experiments upgrades of the Large Hadron Collider (LHC). [...]
2016 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 63 (2016) 1762-1767
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Etude et mise en œuvre de cellules résistantes aux radiations dans le cadre de l'évolution du détecteur à pixels d'ATLAS en technologie CMOS 65 nm / Fougeron, Denis
The 65 nm CMOS technology is a promising technology for the pixel readout chips at HL-LHC in terms of high integration density [...]
CERN-THESIS-2020-403 - 129 p.

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