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CERN Document Server 2,049 Datensätze gefunden  1 - 10nächsteEnde  gehen zum Datensatz: Die Suche hat 0.19 Sekunden gedauert. 
1.
(100)
Prediction of charge collection efficiency in hadron-irradiated pad and pixel silicon detectors / Klingenberg, R (Dortmund U.) ; Krasel, O (Dortmund U.) ; Mass, M (Dortmund U.) ; Dobos, D (Dortmund U.) ; Gossling, C (Dortmund U.) ; Wunstorf, R (Dortmund U.)
The Transient Current Technique (TCT) is used to measure pulse shapes of charge collection and to derive trapping times in irradiated silicon pad detectors in a fluence range up to $10^{15} \ n_{\rm{eq}} \rm{cm}^{-2}$. Simulations of electrical fields and charge collection mechanisms compared to the measurements of the TCT method allow to derive predictions of the charge collection efficiency. [...]
2006 - 7 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 568 (2006) 34-40

In : 10th European Symposium on Semiconductor Detectors (formerly 'Elmau Conference'), Wildbad Kreuth, Germany, 12 - 16 Jun 2005, pp.34-40
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2.
(91)
Impact of Irradiations by Protons with different Energies on Silicon Sensors / Neubüser, Coralie
In the frame of the CMS tracker upgrade campaign the radiation damage of oxygen- rich n-type silicon pad diodes induced by 23 MeV and 23 GeV protons was investigated [...]
DESY-THESIS-2013-021. - 124 p.

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3.
(85)
Development of semiconductor detectors for very harsh radiation environments in high energy physics applications / Casse, G (Liverpool U.) /RD50
The Large Hadron Collider (LHC) at CERN has been designed to achieve the unprecedented luminosity of $10^{34} \rm{cm}^{-2} s^{-1}$. As a consequence, the silicon detectors close to the interaction region will receive severe doses of hadron irradiation. [...]
2004 - 15 p. - Published in : , pp. 129-143
In : 42nd INFN ELOISATRON Project Workshop : Innovative Detectors for Supercolliders "Ettore Majorana", Erice, Italy, 28 Sep - 4 Oct 2003, pp.129-143
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4.
(72)
Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes / Lange, Jörn (Hamburg U., Inst. Exp. Phys. II) ; Becker, Julian (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, Eckhart (Hamburg U., Inst. Exp. Phys. II) ; Klanner, Robert (Hamburg U., Inst. Exp. Phys. II) ; Lindström, Gunnar (Hamburg U., Inst. Exp. Phys. II)
Charge multiplication (CM) in p$^+$n epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of $10^{16}$ cm$^{-2}$ was studied as an option to overcome the strong trapping of charge carriers in the innermost tracking region of future Super-LHC detectors. Charge collection efficiency (CCE) measurements using the Transient Current Technique (TCT) with radiation of different penetration (670, 830, 1060 nm laser light and $\alpha$-particles with optional absorbers) were used to locate the CM region close to the p$^+$-implantation. [...]
arXiv:1007.4735.- 2010 - 11 p. - Published in : Nucl. Instrum. Meth. A 622 (2010) 49-58 External link: Preprint
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5.
(70)
TCT and test beam results of irradiated magnetic Czochralski silicon (MCz-Si) detectors / Luukka, P (Helsinki Inst. of Phys.) ; Härkönen, J (Helsinki Inst. of Phys.) ; Mäenpää, T (Helsinki Inst. of Phys.) ; Betchart, B (Rochester U.) ; Czellar, S (Helsinki Inst. of Phys.) ; Demina, R (Rochester U.) ; Furgeri, A (Karlsruhe U., EKP) ; Gotra, Y (Rochester U.) ; Frey, M (Karlsruhe U., EKP) ; Hartmann, F (Karlsruhe U., EKP) et al.
Pad and strip detectors processed on high resistivity n-type magnetic Czochralski silicon (MCz-Si) were irradiated to several different fluences with protons. The pad detectors were characterized with the transient current technique (TCT) and the full-size strip detectors with a reference beam telescope and a 225GeV muon beam. [...]
FERMILAB-CONF-09-677-E.- 2009 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 604 (2009) 254-257
Fulltext: PDF; External link: FERMILABCONF
In : 8th International Conference on Position Sensitive Detectors, Glasgow, UK, 01 - 05 Sep 2008, pp.254-257
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6.
(68)
Simulation of signal in irradiated silicon pixel detectors / Kramberger, G ; Contardo, D
Induced currents in silicon pixel detectors of different geometries were simulated. The general properties of charge collection in irradiated segmented devices were investigated. [...]
2003 - Published in : Nucl. Instrum. Methods Phys. Res., A 511 (2003) 82-87
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7.
(64)
Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes / Pacifico, Nicola (CERN) ; Dolenc Kittelmann, Irena (CERN) ; Fahrer, Manuel (CERN) ; Moll, Michael (CERN) ; Militaru, Otilia (Louvain U.)
Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280@Wcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24GeV/c protons up to a total NIEL equivalent fluence of 8x10^1^5/cm^2. [...]
2011 - Published in : Nucl. Instrum. Methods Phys. Res., A 658 (2011) 55-60

In : 8th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices, Florence, Italy, 12 - 15 Oct 2010, pp.55-60
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8.
(63)
Characterization of 150 $\mu$m thick epitaxial silicon detectors from different producers after proton irradiation / Hoedlmoser, H (CERN) ; Moll, M (CERN) ; Haerkoenen, J (Helsinki Institute of Physics, Finland) ; Kronberger, M (CERN) ; Trummer, J (CERN) ; Rodeghiero, P (Univ. Catholique de Louvain, Belgium)
Epitaxial (EPI) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of 150 mm thick EPI silicon diodes irradiated with 24GeV=c protons up to a fluence of 3 1015 p=cm2 has been performed by means of Charge Collection Efficiency (CCE) measurements, investigations with the Transient Current Technique (TCT) and standard CV=IV characterizations. [...]
2007 - Published in : Nucl. Instrum. Methods Phys. Res., A 580 (2007) 1243-1249
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9.
(63)
Investigation of electric field and charge multiplication in silicon detectors by Edge-TCT / Kramberger, G (Stefan Inst., Ljubljana) ; Cindro, V (Stefan Inst., Ljubljana) ; Mandić, I (Stefan Inst., Ljubljana) ; Mikuž, M (Stefan Inst., Ljubljana) ; Zavrtanik, M (Stefan Inst., Ljubljana) ; Milovanović, M (Stefan Inst., Ljubljana)
A Transient Current Technique (TCT) utilizing IR laser with 100 ps pulse width and beam diameter of FWHM=8 $\mu \rm{m}$ was used to evaluate non-irradiated and irradiated p-type silicon micro-strip detectors. The beam was parallel with the surface and perpendicular to the strips (Edge-TCT) so that the electron hole pairs were created at known depth in the detector. [...]
2009 - 9 p. - Published in : 10.1109/NSSMIC.2009.5402213
In : IEEE Nuclear Science Symposium And Medical Imaging Conference, Orlando, FL, USA, 25 Oct - 31 Oct 2009, pp.1740-1748
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10.
(63)
Modeling of electric field in silicon micro-strip detectors irradiated with neutrons and pions / Kramberger, G (Stefan Inst., Ljubljana) ; Cindro, V (Stefan Inst., Ljubljana) ; Mandić, I (Stefan Inst., Ljubljana) ; Mikuž, M (Stefan Inst., Ljubljana ; Ljubljana U.) ; Milovanović, M (Stefan Inst., Ljubljana) ; Zavrtanik, M (Stefan Inst., Ljubljana)
Edge-TCT method was used to extract velocity profiles in heavily irradiated silicon micro-strip detectors. Detectors were irradiated up to $10^{16} \rm{cm}^{-2}$ with reactor neutrons, 200 MeV pions and a combination of both. [...]
2014 - 19 p. - Published in : JINST 9 (2014) P10016 Fulltext: jinst14_10_p10016 - PDF; 10.1088_1748-0221_9_10_P10016 - PDF;
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