CERN Accelerating science

主頁 > 檢索結果: Rafi, J M
搜索幫助
高級檢索
Add to Search +
搜尋 專輯:
排序 結果顯示 輸出格式:
CERN Document Server 找到 21 筆記錄  1 - 10下一個最後  跳到記錄: 檢索需時 0.81 秒. 
1.
Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects / Rafí, J M (Barcelona, Inst. Microelectron.) ; Quirion, D (Barcelona, Inst. Microelectron.) ; Duch, M (Barcelona, Inst. Microelectron.) ; Paz, I Lopez (Barcelona, Inst. Microelectron.) ; Dauderys, V (Barcelona, Inst. Microelectron.) ; Claus, T (Barcelona, Inst. Microelectron.) ; Moffat, N (Barcelona, Inst. Microelectron.) ; Molas, B (CELLS - ALBA, LLS) ; Tsunoda, I (Kumamoto Nat. Coll. Tech.) ; Yoneoka, M (Kumamoto Nat. Coll. Tech.) et al.
Ultrathin semiconductor photodiodes are of interest for beam position and monitoring in X-ray synchrotron beamlines and particle therapy medical applications. In this work, single and four-quadrant diodes have been fabricated on ultrathin Si films with thicknesses of 10 μm, 5 μm and 3 μm from silicon on insulator (SOI) substrates. [...]
2023 - 8 p. - Published in : Solid State Electron. 209 (2023) 108756 Fulltext: PDF;
詳細記錄 - 相似記錄
2.
Low-Temperature Annealing of Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors / Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Godignon, Philippe (Barcelona, Inst. Microelectron.) ; Rius, Gemma (Barcelona, Inst. Microelectron.) ; Dauderys, Vainius (Barcelona, Inst. Microelectron.) ; Tsunoda, Isao (Kumamoto Nat. Coll. Tech.) ; Yoneoka, Masashi (Kumamoto Nat. Coll. Tech.) ; Takakura, Kenichiro (Kumamoto Nat. Coll. Tech.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Moll, Michael (CERN)
Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that make it especially appropriate for radiation monitoring in radiation harsh environments and for elevated temperature operation. In this work, radiation effects in electron-, neutron-, and proton-irradiated 4H-SiC p-n junction diodes are investigated by means of electrical characterization, including current–voltage characteristics measured at different temperatures ranging from −50 °C to +200°C. [...]
2023 - 12 p. - Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2285-2296 External link: accepted manuscript
詳細記錄 - 相似記錄
3.
Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors / Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Godignon, Philippe (Barcelona, Inst. Microelectron.) ; Ugobono, Sofía Otero (Barcelona, Inst. Microelectron.) ; Rius, Gemma (Barcelona, Inst. Microelectron.) ; Tsunoda, Isao (Kumamoto Nat. Coll. Tech.) ; Yoneoka, Masashi (Kumamoto Nat. Coll. Tech.) ; Takakura, Kenichiro (Kumamoto Nat. Coll. Tech.) ; Kramberger, Gregor (Stefan Inst., Ljubljana) ; Moll, Michael (CERN)
Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for radiation monitoring in radiation harsh environments and with elevated temperatures and, especially, for the plasma diagnostic systems in future nuclear fusion reactors. In this work, four-quadrant p-n junction diodes produced on epitaxial 4H-SiC substrates are studied. [...]
2020 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 67 (2020) 2481-2489
詳細記錄 - 相似記錄
4.
Investigation of nitrogen enriched silicon for particle detectors / Hönig, J C (Freiburg U.) ; Baselga, M (DESY) ; Vignali, M Centis (CERN) ; Diehl, L (Freiburg U.) ; Dierlamm, A (Karlsruhe U.) ; Fretwurst, E (Hamburg U.) ; Kaminski, P (Warsaw, Inst. Electron. Mat. Tech.) ; Moll, M (CERN) ; Moos, F (Freiburg U.) ; Mori, R (Freiburg U.) et al.
This article explores the viability of nitrogen enriched silicon for particle physics application. For that purpose silicon diodes and strip sensors were produced using high resistivity float zone silicon, diffusion oxygenated float zone silicon, nitrogen enriched float zone silicon and magnetic Czochralski silicon. [...]
2020 - 13 p. - Published in : JINST 15 (2020) P05006 Fulltext: PDF;
詳細記錄 - 相似記錄
5.
Characterization of magnetic Czochralski silicon radiation detectors / Pellegrini, G (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.)
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrònica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic OYJ and they have a nominal resistivity of $1 \rm{k} \Omega cm$. [...]
2005 - 9 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 548 (2005) 355-363
詳細記錄 - 相似記錄
6.
Technology development of p-type microstrip detectors with radiation hard p-spray isolation / Pellegrini, G (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.) ; Díez, S (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.)
A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. [...]
2006 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 566 (2006) 360-365
詳細記錄 - 相似記錄
7.
RD50 Status Report 2008 - Radiation hard semiconductor devices for very high luminosity colliders / Balbuena, Juan Pablo (Barcelona, Inst. Microelectron.) ; Bassignana, Daniela (Barcelona, Inst. Microelectron.) ; Campabadal, Francesca (Barcelona, Inst. Microelectron.) ; Díez, Sergio (Barcelona, Inst. Microelectron.) ; Fleta, Celeste (Barcelona, Inst. Microelectron.) ; Lozano, Manuel (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Rafí, Joan Marc (Barcelona, Inst. Microelectron.) ; Ullán, Miguel (Barcelona, Inst. Microelectron.) ; Creanza, Donato (Bari U. ; INFN, Bari) et al.
The objective of the CERN RD50 Collaboration is the development of radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of a possible upgrade scenario of the LHC.This document reports the status of research and main results obtained after the sixth year of activity of the collaboration..
CERN-LHCC-2010-012 ; LHCC-SR-003. - 2010. - 73 p.
Fulltext
詳細記錄 - 相似記錄
8.
The ATLAS Experiment at the CERN Large Hadron Collider / ATLAS Collaboration
2008 - 437 p. - Published in : JINST 3 (2008) S08003 SISSA/IOP Open Access article: PDF;
In : The CERN Large Hadron Collider - Please contact the library if you need to access this document.
詳細記錄 - 相似記錄
9.
Characterisation of p-type detectors for the future Super-LHC / Lacasta, C (IFIC, Valencia, Spain) ; Campabadal, F (CNM-IMB, Barcelona, Spain) ; Fleta, C (CNM-IMB, Barcelona, Spain) ; García, C (IFIC, Valencia, Spain) ; Lozano, M (CNM-IMB, Barcelona, Spain) ; Martí, S (IFIC, Valencia, Spain) ; Miñano, M (IFIC, Valencia, Spain) ; Pellegrini, G (CNM-IMB, Barcelona, Spain) ; Rafí, J M (CNM-IMB, Barcelona, Spain) ; Ullán, M (CNM-IMB, Barcelona, Spain)
2007 - Published in : Nucl. Instrum. Methods Phys. Res., A 579 (2007) 604-607
In : 6th International "Hiroshima" Symposium on the Development and Applications of Semiconductor Tracking Detectors, Carmel, CA, USA, 11 - 15 Sep 2006, pp.604-607
詳細記錄 - 相似記錄
10.
Development of radiation tolerant semiconductor detectors for the Super-LHC / RD50 Collaboration
The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D; program. [...]
2005 - Published in : Nucl. Instrum. Methods Phys. Res., A 546 (2005) 99-107
詳細記錄 - 相似記錄

CERN Document Server : 找到 21 筆記錄   1 - 10下一個最後  跳到記錄:
參見：相似的作者
16 Rafí, J M
4 Rafí, Joan Marc
您想得到有關這檢索條件的最新結果嗎？
建立您的 電郵警報 或訂閱 RSS feed.
沒有尋找到什麼? 嘗試在以下的服務器查尋：
Rafi, J M 在 Amazon
Rafi, J M 在 CERN EDMS
Rafi, J M 在 CERN Intranet
Rafi, J M 在 CiteSeer
Rafi, J M 在 Google Books
Rafi, J M 在 Google Scholar
Rafi, J M 在 Google Web
Rafi, J M 在 IEC		Rafi, J M 在 IHS
Rafi, J M 在 INSPIRE
Rafi, J M 在 ISO
Rafi, J M 在 KISS Books/Journals
Rafi, J M 在 KISS Preprints
Rafi, J M 在 NEBIS
Rafi, J M 在 SLAC Library Catalog
Rafi, J M 在 Scirus