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Transient current technique for charged traps detection in silicon bonded interfaces / Bronuzzi, J (CERN ; Ecole Polytechnique, Lausanne) ; Bouvet, D. (Ecole Polytechnique, Lausanne) ; Charrier, C. (CEA-DTA-LETI, Grenoble) ; Fournel, F. (CEA-DTA-LETI, Grenoble) ; García, M.F. (CERN ; Cantabria Inst. of Phys.) ; Mapelli, A. (CERN) ; Moll, M. (CERN) ; Rouchouze, E. (CEA-DTA-LETI, Grenoble) ; Sallese, J.M. (Ecole Polytechnique, Lausanne)
Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, micro-electromechanical systems (MEMS) and microfluidic devices. Low temperature direct bonding techniques can be of particular interest for the fabrication of monolithic radiation sensors. [...]
2019 - Published in : AIP Adv. 9 (2019) 025307 Fulltext: PDF;

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