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CERN Document Server Znaleziono 4 rekordów  Szukanie trwało 1.34 sekund. 
1.
A generalized EKV charge-based MOSFET model including oxide and interface traps / Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN) ; Mattiazzo, Serena (CERN) ; Baschirotto, Andrea (INFN, Padua) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges in the oxide bulk and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface trapped charges, the mobile charge density can still be linearized but with respect to both the surface potential and the channel voltage. [...]
2021 - 9 p. - Published in : Solid State Electron. 177 (2021) 107951 Fulltext: PDF;
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2.
Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs / Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Mattiazzo, Serena (INFN, Padua ; U. Padua (main)) ; Baschirotto, Andrea (INFN, Milan Bicocca ; Milan Bicocca U.) ; Enz, Christian (Ecole Polytechnique, Lausanne) /ScalTech28project
This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems..
2019 - 3 p. - Published in : 10.1109/NSSMIC.2018.8824379
In : 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2018), Sydney, Australia, 10 - 17 Nov 2018, pp.8824379
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3.
Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs / Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Faccio, Federico (CERN) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Baschirotto, Andrea (Milan Bicocca U. ; INFN, Milan Bicocca) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO$_2$) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various sizes provide insight into the TID-induced lateral parasitic devices, which contribute the most to the significant increase up to four orders of magnitude in the drain leakage current. [...]
2018 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2018) 38-47 Fulltext: PDF;
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4.
Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs / Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Pezzotta, Alessandro (Ecole Polytechnique, Lausanne) ; Bruschini, Claudio (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Mattiazzo, Serena (U. Padua (main)) ; Baschirotto, Andrea (Milan Bicocca U.) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex interplay of oxide and interface charge trapping relevant to the gate-related dielectrics and the shallow trench isolation. [...]
2017 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 64 (2017) 2639-2647 Fulltext: PDF;
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