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1.
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Development of the radiation-hard MALTA CMOS sensor for tracking applications
/ Gustavino, G (CERN) ; Allport, P (Birmingham U.) ; Asensi Tortajada, I (CERN) ; Behera, P (Indian Inst. Tech., Madras) ; Berlea, D V (DESY, Zeuthen) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Dachs, F (CERN) ; Dao, V (CERN) ; Dash, G (Indian Inst. Tech., Madras) et al.
The MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) is produced using Tower 180 nm CMOS technology, specifically targeting radiation-hard applications in the HL-LHC and beyond. Several process modifications have resulted in radiation hardness up to ${3 \times 10^{15}~1 ~\text{MeV}~\text{n}_{\text{eq}} /\text{cm}^2}$ and time resolution below 2 ns, with uniform charge collection efficiency across the chip formed of $512 \times 224$ pixels with a size of $36.4 \times 36.4~\mu\text{m}^2$. [...]
2024 - 7 p.
- Published in : PoS VERTEX2023 (2024) 048
Fulltext: PDF;
In : 32nd International Workshop on Vertex Detectors (VERTEX 2023), Sestri Levante, Italy, 16 - 20 Oct 2023, pp.048
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2.
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Quad-module characterization with the MALTA monolithic pixel chip
/ Dachs, F (CERN) ; Zoubir, A M (Darmstadt, Tech. U.) ; Sharma, A (CERN) ; Solans Sanchez, C (CERN) ; Buttar, C M (Glasgow U.) ; Bortoletto, D (Oxford U.) ; Dobrijevic, D (Zagreb U.) ; Berlea, D -V (DESY) ; Charbon, E (Ecole Polytechnique, Lausanne) ; Piro, F (CERN) et al.
The MALTA silicon pixel detector combines a depleted monolithic active pixel sensor (DMAPS) with a fully asynchronous front-end and readout. It features a high granularity pixel matrix with a 36.4 μm symmetric pixel pitch, low power consumption of <1 μW/pixel and low material budget with detector thicknesses as little as 50 μm. [...]
2024 - 3 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1064 (2024) 169306
In : PSD13: The 13th International Conference on Position Sensitive Detectors, Oxford, United Kingdom, 3 - 9 Sep 2023, pp.169306
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3.
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Depletion depth studies with the MALTA2 sensor, a depleted monolithic active pixel sensor
/ Berlea, D V (DESY, Zeuthen ; Humboldt U., Berlin) ; Allport, P (Birmingham U.) ; Asensi Tortajada, I (CERN) ; Behera, P (Indian Inst. Tech., Madras) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Dachs, F (CERN) ; Dao, V (CERN) ; Dash, G (Indian Inst. Tech., Madras) ; Dobrijevic, D (CERN ; Boskovic Inst., Zagreb) et al.
MALTA2 is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower 180 nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors both in terms of increased tracking performance due to lower material budget but also in terms of ease of integration and construction costs due to the monolithic design. [...]
2024 - 6 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 1063 (2024) 169262
Fulltext: PDF;
In : 13th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Vancouver, Canada, 3 - 8 Dec 2023, pp.169262
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4.
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Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications
/ Berlea, D V (DESY, Zeuthen ; Humboldt U., Berlin (main)) ; Allport, P (Birmingham U.) ; Tortajada, I Asensi (CERN) ; Bortoletto, D (Oxford U.) ; Buttar, C (Glasgow U.) ; Charbon, E (Ecole Polytechnique, Lausanne) ; Dachs, F (CERN) ; Dao, V (CERN) ; Denizili, H (Abant Izzet Baysal U.) ; Dobrijevic, D (CERN) et al.
MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to lower material budget and ease of integration and construction costs due to the integration of read-out and active sensor into one ASIC. [...]
2023 - 7 p.
- Published in : IEEE Trans. Nucl. Sci. 70 (2023) 2303-2309
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5.
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Radiation hardness of MALTA2 monolithic CMOS imaging sensors on Czochralski substrates
/ van Rijnbach, Milou (CERN ; Oslo U.) ; Berlea, Dumitru Vlad (DESY, Zeuthen) ; Dao, Valerio (CERN) ; Gaži, Martin (Oxford U.) ; Allport, Phil (Birmingham U.) ; Asensi Tortajada, Ignacio (CERN) ; Behera, Prafulla (Indian Inst. Tech., Madras) ; Bortoletto, Daniela (Oxford U.) ; Buttar, Craig (Glasgow U.) ; Dachs, Florian (CERN) et al.
MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) noise, and optimise the charge collection geometry. [...]
arXiv:2308.13231.-
2024-03-10 - 16 p.
- Published in : Eur. Phys. J. C 84 (2024) 251
Fulltext: document - PDF; 2308.13231 - PDF;
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6.
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Performance of the MALTA Telescope
/ van Rijnbach, Milou (CERN ; Oslo U.) ; Gustavino, Giuliano (CERN) ; Allport, Phil (Birmingham U.) ; Asensi, Igancio (CERN) ; Berlea, Dumitru Vlad (DESY, Zeuthen) ; Bortoletto, Daniela (Oxford U.) ; Buttar, Craig (Glasgow U.) ; Charbon, Edoardo (Ecole Polytechnique, Lausanne) ; Dachs, Florian (CERN) ; Dao, Valerio (CERN) et al.
MALTA is part of the Depleted Monolithic Active Pixel sensors designed in Tower 180nm CMOS imaging technology. A custom telescope with six MALTA planes has been developed for test beam campaigns at SPS, CERN, with the ability to host several devices under test. [...]
arXiv:2304.01104.-
2023-07-08 - 22 p.
- Published in : Eur. Phys. J. C 83 (2023) 581
Fulltext: 2304.01104 - PDF; document - PDF;
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7.
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Development of novel low-mass module concepts based on MALTA monolithic pixel sensors
/ Weick, J. (CERN ; Darmstadt, Tech. Hochsch.) ; Dachs, F. (CERN) ; Riedler, P. (CERN) ; Pinto, M. Vicente Barreto (Geneva U.) ; Zoubir, A.M. (Darmstadt, Tech. Hochsch.) ; de Acedo, L. Flores Sanz (CERN) ; Asensi Tortajada, I. (CERN) ; Dao, V. (CERN) ; Dobrijevic, D. (CERN ; Zagreb U.) ; Pernegger, H. (CERN) et al.
The MALTA CMOS monolithic silicon pixel sensors has been developed in the Tower 180 nm CMOS imaging process. It includes an asynchronous readout scheme and complies with the ATLAS inner tracker requirements for the HL-LHC. [...]
arXiv:2303.05792.-
2023-04-03 - 5 p.
- Published in : JINST 18 (2023) C04003
Fulltext: PDF;
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8.
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MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
/ Pernegger, H. (CERN) ; Allport, P. (Birmingham U.) ; Berlea, D.V. (DESY, Zeuthen) ; Birman, A. (Technion) ; Bortoletto, D. (Oxford U.) ; Buttar, C. (Glasgow U.) ; Charbon, E. (LPHE, Lausanne) ; Dachs, F. (CERN) ; Dao, V. (CERN) ; Denizli, H. (Abant Izzet Baysal U.) et al.
Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. [...]
arXiv:2301.03912.-
2023-09-13 - 24 p.
- Published in : JINST 18 (2023) P09018
Fulltext: 2301.03912 - PDF; Publication - PDF;
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