Jazaeri, Farzan - Résultats de la recherche

Recherche collections:

Trier par:	Afficher:	Format de sortie:

CERN Document Server	4 notices trouvées	La recherche a duré 1.38 secondes.

A generalized EKV charge-based MOSFET model including oxide and interface traps / Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN) ; Mattiazzo, Serena (CERN) ; Baschirotto, Andrea (INFN, Padua) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper presents a generalized EKV charge-based MOSFET model that includes the effects of trapped charges in the oxide bulk and at the silicon/oxide interface. It is shown that in the presence of oxide- and interface trapped charges, the mobile charge density can still be linearized but with respect to both the surface potential and the channel voltage. [...]
2021 - 9 p. - Published in : Solid State Electron. 177 (2021) 107951 Fulltext: PDF;

Notice détaillée - Notices similaires

Bias Dependence of Total Ionizing Dose Effects on 28-nm Bulk MOSFETs / Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Mattiazzo, Serena (INFN, Padua ; U. Padua (main)) ; Baschirotto, Andrea (INFN, Milan Bicocca ; Milan Bicocca U.) ; Enz, Christian (Ecole Polytechnique, Lausanne) /ScalTech28project
This paper investigates the effects of total ionizing dose up to 1 Grad on 28-nm bulk MOSFETs under different bias conditions during irradiation. The aim is to assess the potential use of this commercial bulk CMOS technology in the future high-luminosity Large Hadron Collider at CERN that will require highly improved radiation-tolerant tracking systems..
2019 - 3 p. - Published in : 10.1109/NSSMIC.2018.8824379
In : 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC 2018), Sydney, Australia, 10 - 17 Nov 2018, pp.8824379

Notice détaillée - Notices similaires

Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs / Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN ; U. Udine (main)) ; Faccio, Federico (CERN) ; Mattiazzo, Serena (Padua U. ; INFN, Padua) ; Baschirotto, Andrea (Milan Bicocca U. ; INFN, Milan Bicocca) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad(SiO$_2$) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk CMOS process. Experimental comparisons among individual nMOSFETs of various sizes provide insight into the TID-induced lateral parasitic devices, which contribute the most to the significant increase up to four orders of magnitude in the drain leakage current. [...]
2018 - 10 p. - Published in : IEEE Trans. Nucl. Sci. 66 (2018) 38-47 Fulltext: PDF;

Notice détaillée - Notices similaires

Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs / Zhang, Chun-Min (Ecole Polytechnique, Lausanne) ; Jazaeri, Farzan (Ecole Polytechnique, Lausanne) ; Pezzotta, Alessandro (Ecole Polytechnique, Lausanne) ; Bruschini, Claudio (Ecole Polytechnique, Lausanne) ; Borghello, Giulio (CERN) ; Faccio, Federico (CERN) ; Mattiazzo, Serena (U. Padua (main)) ; Baschirotto, Andrea (Milan Bicocca U.) ; Enz, Christian (Ecole Polytechnique, Lausanne)
This paper investigates the radiation tolerance of 28-nm bulk n and pMOSFETs up to 1 Grad of total ionizing dose (TID). The radiation effects on this commercial 28-nm bulk CMOS process demonstrate a strong geometry dependence as a result of the complex interplay of oxide and interface charge trapping relevant to the gate-related dielectrics and the shallow trench isolation. [...]
2017 - 9 p. - Published in : IEEE Trans. Nucl. Sci. 64 (2017) 2639-2647 Fulltext: PDF;

Notice détaillée - Notices similaires

Voir aussi: noms d'auteurs similaires
4	Jazaeri, F

Vous désirez être averti des nouveaux résultats pour cette recherche?
Abonnez-vous à une alerte email personnalisée ou inscrivez-vous via le flux RSS.

Vous n'avez pas trouvé ce que vous avez cherché? Essayez votre requête sur d'autres serveurs:
Jazaeri, Farzan dans Amazon Jazaeri, Farzan dans CERN EDMS Jazaeri, Farzan dans CERN Intranet Jazaeri, Farzan dans CiteSeer Jazaeri, Farzan dans Google Books Jazaeri, Farzan dans Google Scholar Jazaeri, Farzan dans Google Web Jazaeri, Farzan dans IEC	Jazaeri, Farzan dans IHS Jazaeri, Farzan dans INSPIRE Jazaeri, Farzan dans ISO Jazaeri, Farzan dans KISS Books/Journals Jazaeri, Farzan dans KISS Preprints Jazaeri, Farzan dans NEBIS Jazaeri, Farzan dans SLAC Library Catalog Jazaeri, Farzan dans Scirus

CERN Document Server

Articles, rapports et multimédia de la physique des hautes énergies

Main menu

CERN Accélérateur de science