CERN Accelerating science

Article
Title Lithium ion irradiation of standard and oxygenated silicon diodes
Author(s) Candelori, A ; Betta, G F D ; Bisello, D ; Giubilato, P ; Kaminski, A ; Litovchenko, A P ; Lozano, A ; Petrie, J R ; Rando, R ; Ullán, M ; Wyss, J
Affiliation (Dipt di Fisica, Padova Univ, Italy)
Publication 2004
In: IEEE Trans. Nucl. Sci. 51 (2004) 2865-2871
In: 7th European Conference On Radiation And Its Effects On Components And Systems, Noordwijk, The Netherlands, 15 - 20 Sep 2003, pp.393-399
DOI 10.1109/TNS.2004.835064
Subject category Health Physics and Radiation Effects
Accelerator/Facility, Experiment RD50
Abstract The next generation silicon detectors for future very high luminosity colliders or a possible LHC upgrade scenario will require radiation- hard detectors for fluences up to 10/sup 16/ 1-MeV equivalent neutrons/cm/sup 2/. These high fluences present strong constraints because long irradiation times are required at the currently available proton irradiation facilities. Energetic (58 MeV) lithium ions present a non-ionizing energy loss approximately=27.3 times higher than 27 MeV protons, and could consequently be a new promising radiation source for investigating the radiation hardness of silicon detectors up to very high particle fluences. Starting from this premise, we have investigated the degradation, as measured by the leakage current density increase and depletion voltage variations in the short and long-term characteristics, induced by 58 MeV Li ions in state-of-the-art silicon diodes processed by two different manufacturers on standard and oxygenated silicon substrates. Finally, the correlation between the radiation damage induced by 58 MeV Li ions and 27 MeV protons is discussed.

Corresponding record in: Inspire


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