| ATLAS Note | |
| Report number | ATL-INDET-99-012 ; CERN-EP-99-152 |
| Title | The ATLAS Silicon Pixel Sensors |
| Author(s) | Alam, M S (SUNY, Albany) ; Ciocio, A ; Einsweiler, K F ; Emes, J ; Gilchriese, M G D ; Joshi, A ; Kleinfelder, S A ; Marchesini, R ; McCormack, F ; Milgrome, O ; Palaio, N ; Pengg, F ; Richardson, J ; Zizka, G ; Ackers, M ; Andreazza, A ; Comes, G ; Fischer, P ; Keil, M ; Klasen, V ; Kühl, T ; Meuser, S ; Ockenfels, W ; Raith, B ; Treis, J ; Wermes, N ; Gössling, C ; Hügging, F G ; Wüstenfeld, J ; Wunstorf, R ; Barberis, D (CERN) ; Beccherle, R ; Darbo, G ; Gagliardi, G ; Gemme, C ; Morettini, P ; Musico, P ; Osculati, B ; Parodi, F ; Rossi, L ; Blanquart, L ; Breugnon, P ; Calvet, D ; Clemens, J-C ; Delpierre, P A ; Hallewell, G D (CERN) ; Laugier, D ; Mouthuy, T ; Rozanov, A ; Valin, I ; Aleppo, M ; Caccia, M ; Ragusa, F ; Troncon, C ; Lutz, Gerhard ; Richter, R H ; Rohe, T ; Brandl, A ; Gorfine, G ; Hoeferkamp, M ; Seidel, SC ; Boyd, GR ; Skubic, P L ; Sícho, P ; Tomasek, L ; Vrba, V ; Holder, M ; Ziolkowski, M ; D'Auria, S ; del Papa, C ; Charles, E ; Fasching, D ; Becks, K H ; Lenzen, G ; Linder, C |
| Affiliation | (BCCP, Berkeley) ; (Bonn U.) ; (Dortmund U.) ; (INFN, Genoa) ; (Marseille, CPPM) ; (INFN, Milan) ; (Munich, Max Planck Inst.) ; (New Mexico U.) ; (Oklahoma U.) ; (Prague, Inst. Phys.) ; (Siegen U.) ; (INFN, Udine) ; (Wisconsin U., Madison) ; (Wuppertal U.) |
| Publication | 2001 |
| Imprint | 14 Sep 1999 |
| Number of pages | 34 |
| In: | Nucl. Instrum. Methods Phys. Res., A 456 (2001) 217-232 |
| DOI | 10.1016/S0168-9002(00)00574-X |
| Subject category | Detectors and Experimental Techniques |
| Accelerator/Facility, Experiment | CERN LHC ; ATLAS |
| Free keywords | Pixel ; Sensors ; Silicon |
| Abstract | Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired. |
| Copyright/License | Preprint: (License: CC-BY-4.0) |
Corresponding record in: Inspire
ჩანაწერი შექმნილია 2003-11-17, ბოლოს შესწორებულია 2018-09-24
