002914564 001__ 2914564
002914564 005__ 20250715044122.0
002914564 0248_ $$aoai:cds.cern.ch:2914564$$pcerncds:FULLTEXT$$pcerncds:CERN:FULLTEXT$$pcerncds:CERN
002914564 0247_ $$2DOI$$9IOP$$a10.1088/1748-0221/19/12/P12020
002914564 037__ $$9arXiv$$aarXiv:2410.08738$$cphysics.ins-det
002914564 035__ $$9arXiv$$aoai:arXiv.org:2410.08738
002914564 035__ $$9Inspire$$aoai:inspirehep.net:2839388$$d2025-07-14T15:02:48Z$$h2025-07-15T02:00:06Z$$mmarcxml$$ttrue$$uhttps://inspirehep.net/api/oai2d
002914564 035__ $$9Inspire$$a2839388
002914564 041__ $$aeng
002914564 100__ $$aAddesa, F.$$jORCID:0000-0003-0484-5804$$tROR:https://ror.org/00hx57361$$uPrinceton U.$$vPrinceton University, Princeton, U.S.A.
002914564 245__ $$9IOP$$aOptimization of LYSO crystals and SiPM parameters for the CMS MIP timing detector
002914564 269__ $$c2024-10-11
002914564 260__ $$c2024-12-17
002914564 300__ $$a21 p
002914564 520__ $$9IOP$$aFor the High-Luminosity (HL-LHC) phase, the upgrade of the Compact Muon Solenoid (CMS) experiment at CERN will include a novel MIP Timing Detector (MTD).The central part of MTD, the barrel timing layer (BTL), is designed to provide a measurement of the time of arrival of charged particles with a precision of 30 ps at the beginning of HL-LHC, progressively degrading to 60 ps while operating in an extremely harsh radiation environment for over a decade.In this paper we present a comparative analysis of the time resolution of BTL module prototypes made of LYSO:Ce crystal bars read out by silicon photo-multipliers (SiPMs).The timing performance measured in beam test campaigns is presented for prototypes with different construction and operation parameters, such as different SiPM cell sizes (15, 20, 25 and 30 μm), SiPM manufacturers and crystal bar thicknesses. The evolution of time resolution as a function of the irradiation level has been studied using non-irradiated SiPMs as well as SiPMs exposed up to 2 × 10$^{14}$ n$_{eq}$/cm$^{2}$ fluence.The key parameters defining the module time resolution such as SiPM characteristics (gain, photon detection efficiency, radiation induced dark count rate) and crystal properties (light output and dimensions) are discussed.These results have informed the final choice of the MTD barrel sensor configuration and offer a unique starting point for the design of future large-area scintillator-based timing detectors in either low or high radiation environments.
002914564 520__ $$9arXiv$$aFor the High-Luminosity (HL-LHC) phase, the upgrade of the Compact Muon Solenoid (CMS) experiment at CERN will include a novel MIP Timing Detector (MTD). The central part of MTD, the barrel timing layer (BTL), is designed to provide a measurement of the time of arrival of charged particles with a precision of 30 ps at the beginning of HL-LHC, progressively degrading to 60 ps while operating in an extremely harsh radiation environment for over a decade. In this paper we present a comparative analysis of the time resolution of BTL module prototypes made of LYSO:Ce crystal bars read out by silicon photo-multipliers (SiPMs). The timing performance measured in beam test campaigns is presented for prototypes with different construction and operation parameters, such as different SiPM cell sizes (15, 20, 25 and 30 $\rm \mu m$), SiPM manufacturers and crystal bar thicknesses. The evolution of time resolution as a function of the irradiation level has been studied using non-irradiated SiPMs as well as SiPMs exposed up to $2\times 10^{14}~n_{eq}/cm^2$ fluence. The key parameters defining the module time resolution such as SiPM characteristics (gain, photon detection efficiency, radiation induced dark count rate) and crystal properties (light output and dimensions) are discussed. These results have informed the final choice of the MTD barrel sensor configuration and offer a unique starting point for the design of future large-area scintillator-based timing detectors in either low or high radiation environments.
002914564 540__ $$3preprint$$aCC BY 4.0$$uhttp://creativecommons.org/licenses/by/4.0/
002914564 540__ $$3publication$$aCC-BY-4.0$$bIOP$$fOther$$uhttp://creativecommons.org/licenses/by/4.0/
002914564 542__ $$3publication$$dThe Author(s)$$g2024
002914564 65017 $$2arXiv$$ahep-ex
002914564 65017 $$2SzGeCERN$$aParticle Physics - Experiment
002914564 65017 $$2arXiv$$aphysics.ins-det
002914564 65017 $$2SzGeCERN$$aDetectors and Experimental Techniques
002914564 690C_ $$aCERN
002914564 690C_ $$aARTICLE
002914564 693__ $$aCERN LHC$$eCMS
002914564 700__ $$aAnderson, T.$$tROR:https://ror.org/0153tk833$$uVirginia U.$$vUniversity of Virginia, Charlottesville, U.S.A.
002914564 700__ $$aBarria, P.$$tROR:https://ror.org/05eva6s33$$tROR:https://ror.org/02be6w209$$uINFN, Rome$$uRome U.$$vINFN Sezione di Roma, Rome, Italy
002914564 700__ $$aBasile, C.$$tROR:https://ror.org/05eva6s33$$tROR:https://ror.org/02be6w209$$tROR:https://ror.org/02be6w209$$uINFN, Rome$$uRome U.$$uU. Rome La Sapienza (main)$$vINFN Sezione di Roma, Rome, Italy$$vSapienza Università di Roma, Rome, Italy
002914564 700__ $$aBenaglia, A.$$tROR:https://ror.org/03xejxm22$$uINFN, Milan Bicocca$$vINFN Sezione di Milano-Bicocca, Milano, Italy
002914564 700__ $$aBertoni, R.$$tROR:https://ror.org/03xejxm22$$uINFN, Milan Bicocca$$vINFN Sezione di Milano-Bicocca, Milano, Italy
002914564 700__ $$aBethani, A.$$tROR:https://ror.org/047s2c258$$uMaryland U.$$vUniversity of Maryland, College Park, U.S.A.
002914564 700__ $$aBianco, R.$$tROR:https://ror.org/05eva6s33$$tROR:https://ror.org/02be6w209$$tROR:https://ror.org/01ggx4157$$uINFN, Rome$$uRome U.$$uCERN$$vINFN Sezione di Roma, Rome, Italy$$vCERN, European Organization for Nuclear Research, Geneva, Switzerland
002914564 700__ $$aBornheim, A.$$tROR:https://ror.org/05dxps055$$uCaltech$$vCalifornia Institute of Technology, Pasadena, U.S.A.
002914564 700__ $$aBoldrini, G.$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aBoletti, A.$$tROR:https://ror.org/01hys1667$$uLIP, Lisbon$$vLaboratório de Instrumentação e Física Experimental de Partículas, Lisboa, Portugal
002914564 700__ $$aBulla, A.$$jORCID:0000-0001-5924-4286$$tROR:https://ror.org/03paz5966$$tROR:https://ror.org/003109y17$$uINFN, Cagliari$$uCagliari U.$$vINFN Sezione di Cagliari, Cagliari, Italy$$vUniversità degli Studi di Cagliari, Cagliari, Italy
002914564 700__ $$aCampana, M.$$tROR:https://ror.org/04t5xt781$$uNortheastern U.$$vNortheastern University, Boston, U.S.A.
002914564 700__ $$aCardwell, B.$$jORCID:0000-0001-5553-0891$$tROR:https://ror.org/0153tk833$$uVirginia U.$$vUniversity of Virginia, Charlottesville, U.S.A.
002914564 700__ $$aCarniti, P.$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aCetorelli, F.$$jORCID:0000-0002-3061-1553$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aDe Guio, F.$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aDe Leo, K.$$tROR:https://ror.org/05j3snm48$$tROR:https://ror.org/02n742c10$$uINFN, Trieste$$uTrieste U.$$vINFN Sezione di Trieste, Trieste, Italy$$vUniversità di Trieste, Trieste, Italy
002914564 700__ $$aDe Riggi, F.$$tROR:https://ror.org/05eva6s33$$tROR:https://ror.org/02be6w209$$tROR:https://ror.org/02be6w209$$uINFN, Rome$$uRome U.$$uU. Rome La Sapienza (main)$$vINFN Sezione di Roma, Rome, Italy$$vSapienza Università di Roma, Rome, Italy
002914564 700__ $$aDervan, J.$$tROR:https://ror.org/04t5xt781$$uNortheastern U.$$vNortheastern University, Boston, U.S.A.
002914564 700__ $$aFernandez, E.$$tROR:https://ror.org/0153tk833$$uVirginia U.$$vUniversity of Virginia, Charlottesville, U.S.A.
002914564 700__ $$aGaile, A.$$uLatvia U., ISSP$$vRiga Technical University, Riga, Latvia
002914564 700__ $$aGallinaro, M.$$tROR:https://ror.org/01hys1667$$uLIP, Lisbon$$vLaboratório de Instrumentação e Física Experimental de Partículas, Lisboa, Portugal
002914564 700__ $$aGhezzi, A.$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aGotti, C.$$tROR:https://ror.org/03xejxm22$$uINFN, Milan Bicocca$$vINFN Sezione di Milano-Bicocca, Milano, Italy
002914564 700__ $$aGoldouzian, R.$$tROR:https://ror.org/00mkhxb43$$uNotre Dame U.$$vUniversity of Notre Dame, Notre Dame, U.S.A.
002914564 700__ $$aGuglielmi, V.$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aHeering, A.$$tROR:https://ror.org/00mkhxb43$$uNotre Dame U.$$vUniversity of Notre Dame, Notre Dame, U.S.A.
002914564 700__ $$aHu, Z.$$tROR:https://ror.org/03cve4549$$uTsinghua U., Beijing$$vTsinghua University, Beijing, China
002914564 700__ $$aJose, M.$$tROR:https://ror.org/0153tk833$$uVirginia U.$$vUniversity of Virginia, Charlottesville, U.S.A.
002914564 700__ $$aKarneyeu, A.$$tROR:https://ror.org/00mkhxb43$$uNotre Dame U.$$vUniversity of Notre Dame, Notre Dame, U.S.A.
002914564 700__ $$aKrishna, A.$$tROR:https://ror.org/04t5xt781$$uNortheastern U.$$vNortheastern University, Boston, U.S.A.
002914564 700__ $$aKronheim, B.$$tROR:https://ror.org/047s2c258$$uMaryland U.$$vUniversity of Maryland, College Park, U.S.A.
002914564 700__ $$aKuo, C.$$tROR:https://ror.org/05bqach95$$uTaiwan, Natl. Taiwan U.$$vNational Taiwan University (NTU), Taipei, Taiwan
002914564 700__ $$aLa Torre, A.$$tROR:https://ror.org/05dxps055$$uCaltech$$vCalifornia Institute of Technology, Pasadena, U.S.A.
002914564 700__ $$aLi, A.$$jORCID:0000-0002-4547-116X$$tROR:https://ror.org/0153tk833$$uVirginia U.$$vUniversity of Virginia, Charlottesville, U.S.A.
002914564 700__ $$aLombardi, F.$$tROR:https://ror.org/05eva6s33$$tROR:https://ror.org/02be6w209$$tROR:https://ror.org/02be6w209$$uINFN, Rome$$uRome U.$$uU. Rome La Sapienza (main)$$vINFN Sezione di Roma, Rome, Italy$$vSapienza Università di Roma, Rome, Italy
002914564 700__ $$aLucchini, M.T.$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aMalberti, M.$$tROR:https://ror.org/03xejxm22$$uINFN, Milan Bicocca$$vINFN Sezione di Milano-Bicocca, Milano, Italy
002914564 700__ $$aMao, Y.$$tROR:https://ror.org/02v51f717$$uPeking U., SKLNPT$$vDepartment of Physics and State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing, China
002914564 700__ $$aMarzocchi, B.$$tROR:https://ror.org/04t5xt781$$uNortheastern U.$$vNortheastern University, Boston, U.S.A.
002914564 700__ $$aMeridiani, P.$$tROR:https://ror.org/01vj6ck58$$tROR:https://ror.org/048tbm396$$uINFN, Turin$$uTurin U.$$vINFN Sezione di Torino, Torino, Italy$$vUniversità di Torino, Torino, Italy
002914564 700__ $$aMusienko, Y.$$tROR:https://ror.org/00mkhxb43$$uNotre Dame U.$$vUniversity of Notre Dame, Notre Dame, U.S.A.
002914564 700__ $$aNeu, C.$$tROR:https://ror.org/0153tk833$$uVirginia U.$$vUniversity of Virginia, Charlottesville, U.S.A.
002914564 700__ $$aOrgantini, G.$$tROR:https://ror.org/05eva6s33$$tROR:https://ror.org/02be6w209$$tROR:https://ror.org/02be6w209$$uINFN, Rome$$uRome U.$$uU. Rome La Sapienza (main)$$vINFN Sezione di Roma, Rome, Italy$$vSapienza Università di Roma, Rome, Italy
002914564 700__ $$aOrimoto, T.$$tROR:https://ror.org/04t5xt781$$uNortheastern U.$$vNortheastern University, Boston, U.S.A.
002914564 700__ $$aPalmer, C.$$tROR:https://ror.org/047s2c258$$uMaryland U.$$vUniversity of Maryland, College Park, U.S.A.
002914564 700__ $$aPaganoni, M.$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aPalluotto, [email protected]$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aParamatti, R.$$tROR:https://ror.org/05eva6s33$$tROR:https://ror.org/02be6w209$$tROR:https://ror.org/02be6w209$$uINFN, Rome$$uRome U.$$uU. Rome La Sapienza (main)$$vINFN Sezione di Roma, Rome, Italy$$vSapienza Università di Roma, Rome, Italy
002914564 700__ $$aPessina, G.$$tROR:https://ror.org/03xejxm22$$uINFN, Milan Bicocca$$vINFN Sezione di Milano-Bicocca, Milano, Italy
002914564 700__ $$aPerelman, R.T.$$tROR:https://ror.org/0153tk833$$uVirginia U.$$vUniversity of Virginia, Charlottesville, U.S.A.
002914564 700__ $$aQuaranta, C.$$tROR:https://ror.org/05eva6s33$$tROR:https://ror.org/02be6w209$$tROR:https://ror.org/02be6w209$$uINFN, Rome$$uRome U.$$uU. Rome La Sapienza (main)$$vINFN Sezione di Roma, Rome, Italy$$vSapienza Università di Roma, Rome, Italy
002914564 700__ $$aRedaelli, N.$$tROR:https://ror.org/03xejxm22$$uINFN, Milan Bicocca$$vINFN Sezione di Milano-Bicocca, Milano, Italy
002914564 700__ $$aRedaelli, S.$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aGutiérrez, G. Reales$$tROR:https://ror.org/02e2c7k09$$uDelft Tech. U.$$vFaculty of Mechanical, Maritime, and Materials Engineering, Delft University of Technology, Delft, The Netherlands
002914564 700__ $$aRonchi, S.$$jORCID:0009-0000-0565-0465$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aSantanastasio, F.$$tROR:https://ror.org/05eva6s33$$tROR:https://ror.org/02be6w209$$tROR:https://ror.org/02be6w209$$uINFN, Rome$$uRome U.$$uU. Rome La Sapienza (main)$$vINFN Sezione di Roma, Rome, Italy$$vSapienza Università di Roma, Rome, Italy
002914564 700__ $$aSchmidt, I.$$tROR:https://ror.org/036jqmy94$$uIowa U.$$vThe University of Iowa, Iowa City, U.S.A.
002914564 700__ $$aSilva, J.C.$$tROR:https://ror.org/01hys1667$$uLIP, Lisbon$$vLaboratório de Instrumentação e Física Experimental de Partículas, Lisboa, Portugal
002914564 700__ $$aSorrentino, G.$$tROR:https://ror.org/05p1j8758$$uKansas State U.$$vKansas State University, Manhattan, U.S.A.
002914564 700__ $$aSun, X.$$tROR:https://ror.org/02v51f717$$uPeking U., SKLNPT$$vDepartment of Physics and State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing, China
002914564 700__ $$ade Fatis, T. Tabarelli$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aTosi, M.$$tROR:https://ror.org/00z34yn88$$tROR:https://ror.org/00240q980$$uINFN, Padua$$uPadua U.$$vINFN Sezione di Padova, Padova, Italy$$vUniversità di Padova, Padova, Italy
002914564 700__ $$aUjvari, B.$$tROR:https://ror.org/02xf66n48$$uDebrecen U.$$vInstitute of Physics, University of Debrecen, Debrecen, Hungary
002914564 700__ $$aVarela, J.$$tROR:https://ror.org/01hys1667$$uLIP, Lisbon$$vLaboratório de Instrumentação e Física Experimental de Partículas, Lisboa, Portugal
002914564 700__ $$aWang, J.$$tROR:https://ror.org/02v51f717$$uPeking U., SKLNPT$$vDepartment of Physics and State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing, China
002914564 700__ $$aWayne, M.$$tROR:https://ror.org/00mkhxb43$$uNotre Dame U.$$vUniversity of Notre Dame, Notre Dame, U.S.A.
002914564 700__ $$aWhite, S.$$jORCID:0000-0002-5569-7269$$tROR:https://ror.org/0153tk833$$uVirginia U.$$vUniversity of Virginia, Charlottesville, U.S.A.
002914564 700__ $$aZhang, L.$$tROR:https://ror.org/02v51f717$$tROR:https://ror.org/03xejxm22$$tROR:https://ror.org/01ynf4891$$uPeking U., SKLNPT$$uINFN, Milan Bicocca$$uMilan Bicocca U.$$vDepartment of Physics and State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing, China$$vINFN Sezione di Milano-Bicocca, Milano, Italy$$vUniversità di Milano-Bicocca, Milano, Italy
002914564 700__ $$aZhang, M.$$tROR:https://ror.org/02v51f717$$uPeking U., SKLNPT$$vDepartment of Physics and State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing, China
002914564 773__ $$cP12020$$n12$$pJINST$$v19$$y2024
002914564 8564_ $$82625653$$s19045$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_vs_thickness_types_2E14.png$$y00028 Time resolution of modules with non-irradiated (left) and irradiated (right) SiPMs as a function of the crystal thickness, i.e. for the T1 (3.75 mm), T2 (3.00 mm), and T3 (2.40 mm) modules. Results are shown for $\rm V_{OV}$ = 0.95~V. The terms contributing to the measured time resolution, photo-statistics (green), electronics (blue) and DCR (orange), are also reported.
002914564 8564_ $$82625654$$s16684$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_1E14_T1_temperatures_vs_staticPower.png$$y00032 Time resolution of three T1 modules (3.75~mm thick crystals) constructed using SiPM arrays with 25~$\mu$m and irradiated to different levels: $1\times10^{13}$~\neut~ (top), $1\times10^{14}$~\neut~ (middle), $2\times10^{14}$~\neut~ (bottom). All SiPMs underwent the same annealing. The time resolution is shown as a function of the over-voltage on the left column and as a function of static power of the SiPM on the right column. Different operating temperatures are compared around a temperature that yields a DCR level equivalent to the nominal BTL operating conditions (defined by irradiation level, annealing history and operating temperature).
002914564 8564_ $$82625655$$s13450$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_FBK_nonIrr_vs_Vov.png$$y00016 Time resolution as a function of the SiPM over-voltage for T2 modules with SiPMs of different cell-size. Left: modules with SiPMs from HPK. Right: modules with SiPMs from FBK.
002914564 8564_ $$82625656$$s13635$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_2E14_types_vs_Vov.png$$y00026 Time resolution as a function of the over-voltage for modules of different thicknesses (represented by green, blue, and red lines for T1, T2, and T3 modules, respectively). Modules were rotated by an angle of 64$^{\circ}$ compared to the beam direction to emulate the energy deposition in the crystals expected in the outer pseudorapidity region ($|\eta| > 1.15$) of the BTL detector, as described in the MTD TDR~\cite{CMS_MTD_TDR}. Results are shown for both non irradiated (left) and irradiated to $2\times10^{14}$ \neut~ (right) modules.
002914564 8564_ $$82625657$$s16787$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_vs_thickness_types_nonIrr.png$$y00027 Time resolution of modules with non-irradiated (left) and irradiated (right) SiPMs as a function of the crystal thickness, i.e. for the T1 (3.75 mm), T2 (3.00 mm), and T3 (2.40 mm) modules. Results are shown for $\rm V_{OV}$ = 0.95~V. The terms contributing to the measured time resolution, photo-statistics (green), electronics (blue) and DCR (orange), are also reported.
002914564 8564_ $$82625658$$s31232$$uhttp://cds.cern.ch/record/2914564/files/c_DCR_temperature_ALDOAve.png$$y00007 Single SiPM dark count rate as a function of the SiPM over-voltage for different configurations tested: (a) T2 modules with SiPMs of different cell-size (15, 20, 25, 30~$\rm\mu m$) irradiated to $2\times10^{14}$~\neut; (b) T1 modules with 25~$\rm\mu m$ cell-size SiPMs irradiated to different fluences ($1\times10^{13}$, $1\times10^{14}$, $2\times10^{14}$~\neut); (c) T2 module with 25~$\rm\mu m$ cell-size HPK SiPMs irradiated to $2\times10^{14}$~\neut for different operating temperatures; (d) T2 modules with 25~$\rm\mu m$ cell-size SiPMs from HPK and FBK irradiated to $2\times10^{14}$~\neut. The SiPM arrays underwent the same annealing sequence, as described in the text.
002914564 8564_ $$82625659$$s14209$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_2E14_T1_temperatures_vs_Vov.png$$y00033 Time resolution of three T1 modules (3.75~mm thick crystals) constructed using SiPM arrays with 25~$\mu$m and irradiated to different levels: $1\times10^{13}$~\neut~ (top), $1\times10^{14}$~\neut~ (middle), $2\times10^{14}$~\neut~ (bottom). All SiPMs underwent the same annealing. The time resolution is shown as a function of the over-voltage on the left column and as a function of static power of the SiPM on the right column. Different operating temperatures are compared around a temperature that yields a DCR level equivalent to the nominal BTL operating conditions (defined by irradiation level, annealing history and operating temperature).
002914564 8564_ $$82625660$$s14586$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_cellSizes_nonIrr_vs_Vov.png$$y00015 Time resolution as a function of the SiPM over-voltage for T2 modules with SiPMs of different cell-size. Left: modules with SiPMs from HPK. Right: modules with SiPMs from FBK.
002914564 8564_ $$82625661$$s989696$$uhttp://cds.cern.ch/record/2914564/files/tb_modules_photo.png$$y00003 Top: picture of LYSO arrays of T1 (3.75 mm thickness), T2 (3.00 mm thickness) and T3 (2.40 mm thickness) from left to right. Bottom left: picture of three BTL modules after and before gluing of the SiPM arrays to the crystal array. Bottom right: picture of a module with the flex cables connected to the front end board and with the SiPM back side coupled thermally to a aluminum heat sink used during the test.
002914564 8564_ $$82625662$$s14049$$uhttp://cds.cern.ch/record/2914564/files/c_energyCorr.png$$y00012 Left: example of MIP energy distribution measured in one bar. The energy is the average between the energies measured by the two SiPMs. The distribution is fitted with a Landau function. Events with energy in the range between the vertical dashed lines are retained for the analysis; events at low energy are due to cross-talk from adjacent bars. Right: example of dependence of $t_{diff}$ on the energy ratio between the two channels. The module with HPK SiPM of 25$~\mu$m cell-size was operated at $\rm V_{OV}$ = 1~V.
002914564 8564_ $$82625663$$s16471$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_components_25_2E14_cellSizes_vs_Vov.png$$y00022 Time resolution as a function of over-voltage for T2 modules made with HPK SiPMs of 15~$\mu$m (left) and 25~$\mu$m (right) cell-size, both non-irradiated (top row) and irradiated to 2$\times$10$^{14}$ \neut. The time resolution measured with beam data is shown with black dots, the main contributions to the time resolution are shown by the colored lines: electronics (blue), the photo-statistics (green), and DCR (orange).
002914564 8564_ $$82625664$$s16058$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_1E14_T1_temperatures_vs_Vov.png$$y00031 Time resolution of three T1 modules (3.75~mm thick crystals) constructed using SiPM arrays with 25~$\mu$m and irradiated to different levels: $1\times10^{13}$~\neut~ (top), $1\times10^{14}$~\neut~ (middle), $2\times10^{14}$~\neut~ (bottom). All SiPMs underwent the same annealing. The time resolution is shown as a function of the over-voltage on the left column and as a function of static power of the SiPM on the right column. Different operating temperatures are compared around a temperature that yields a DCR level equivalent to the nominal BTL operating conditions (defined by irradiation level, annealing history and operating temperature).
002914564 8564_ $$82625665$$s15049$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_components_15_nonIrr_cellSizes_vs_Vov.png$$y00019 Time resolution as a function of over-voltage for T2 modules made with HPK SiPMs of 15~$\mu$m (left) and 25~$\mu$m (right) cell-size, both non-irradiated (top row) and irradiated to 2$\times$10$^{14}$ \neut. The time resolution measured with beam data is shown with black dots, the main contributions to the time resolution are shown by the colored lines: electronics (blue), the photo-statistics (green), and DCR (orange).
002914564 8564_ $$82625666$$s31398$$uhttp://cds.cern.ch/record/2914564/files/c_DCR_cellsize_ALDOAve.png$$y00005 Single SiPM dark count rate as a function of the SiPM over-voltage for different configurations tested: (a) T2 modules with SiPMs of different cell-size (15, 20, 25, 30~$\rm\mu m$) irradiated to $2\times10^{14}$~\neut; (b) T1 modules with 25~$\rm\mu m$ cell-size SiPMs irradiated to different fluences ($1\times10^{13}$, $1\times10^{14}$, $2\times10^{14}$~\neut); (c) T2 module with 25~$\rm\mu m$ cell-size HPK SiPMs irradiated to $2\times10^{14}$~\neut for different operating temperatures; (d) T2 modules with 25~$\rm\mu m$ cell-size SiPMs from HPK and FBK irradiated to $2\times10^{14}$~\neut. The SiPM arrays underwent the same annealing sequence, as described in the text.
002914564 8564_ $$82625667$$s14910$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_2E14_T1_temperatures_vs_staticPower.png$$y00034 Time resolution of three T1 modules (3.75~mm thick crystals) constructed using SiPM arrays with 25~$\mu$m and irradiated to different levels: $1\times10^{13}$~\neut~ (top), $1\times10^{14}$~\neut~ (middle), $2\times10^{14}$~\neut~ (bottom). All SiPMs underwent the same annealing. The time resolution is shown as a function of the over-voltage on the left column and as a function of static power of the SiPM on the right column. Different operating temperatures are compared around a temperature that yields a DCR level equivalent to the nominal BTL operating conditions (defined by irradiation level, annealing history and operating temperature).
002914564 8564_ $$82625668$$s14673$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_components_25_nonIrr_cellSizes_vs_Vov.png$$y00020 Time resolution as a function of over-voltage for T2 modules made with HPK SiPMs of 15~$\mu$m (left) and 25~$\mu$m (right) cell-size, both non-irradiated (top row) and irradiated to 2$\times$10$^{14}$ \neut. The time resolution measured with beam data is shown with black dots, the main contributions to the time resolution are shown by the colored lines: electronics (blue), the photo-statistics (green), and DCR (orange).
002914564 8564_ $$82625669$$s17691$$uhttp://cds.cern.ch/record/2914564/files/c_HPK_2E14_cellSizes_DCR_pdescaled_vs_DCR_average.png$$y00024 The photo-statistics component of the time resolution as a function of the SiPM PDE (left) and DCR component as a function of the SiPM DCR (right) for T2 modules with non-irradiated SiPMs of different cell-sizes. The lines represent fits to data with a power law function in the form of $p_0 \times PDE^{\alpha}$ and $p_1 \times DCR^{\beta}$, respectively. $\rm PDE_{ref}$ corresponds to PDE of 25~$\mu m$ SiPMs from \vendorH~ at 1~V OV.
002914564 8564_ $$82625670$$s15217$$uhttp://cds.cern.ch/record/2914564/files/c_HPK_cellSizes_Stoch_vs_PDE_average.png$$y00023 The photo-statistics component of the time resolution as a function of the SiPM PDE (left) and DCR component as a function of the SiPM DCR (right) for T2 modules with non-irradiated SiPMs of different cell-sizes. The lines represent fits to data with a power law function in the form of $p_0 \times PDE^{\alpha}$ and $p_1 \times DCR^{\beta}$, respectively. $\rm PDE_{ref}$ corresponds to PDE of 25~$\mu m$ SiPMs from \vendorH~ at 1~V OV.
002914564 8564_ $$82625671$$s208191$$uhttp://cds.cern.ch/record/2914564/files/lyso_pic_paper_wLeg.png$$y00002 Top: picture of LYSO arrays of T1 (3.75 mm thickness), T2 (3.00 mm thickness) and T3 (2.40 mm thickness) from left to right. Bottom left: picture of three BTL modules after and before gluing of the SiPM arrays to the crystal array. Bottom right: picture of a module with the flex cables connected to the front end board and with the SiPM back side coupled thermally to a aluminum heat sink used during the test.
002914564 8564_ $$82625672$$s13526$$uhttp://cds.cern.ch/record/2914564/files/c_MIPpeak.png$$y00011 Left: example of MIP energy distribution measured in one bar. The energy is the average between the energies measured by the two SiPMs. The distribution is fitted with a Landau function. Events with energy in the range between the vertical dashed lines are retained for the analysis; events at low energy are due to cross-talk from adjacent bars. Right: example of dependence of $t_{diff}$ on the energy ratio between the two channels. The module with HPK SiPM of 25$~\mu$m cell-size was operated at $\rm V_{OV}$ = 1~V.
002914564 8564_ $$82625673$$s12822542$$uhttp://cds.cern.ch/record/2914564/files/2410.08738.pdf$$yFulltext
002914564 8564_ $$82625674$$s19174$$uhttp://cds.cern.ch/record/2914564/files/gain.png$$y00000 Gain (left) and effective PDE (right) as a function of over-voltage for SiPMs with different cell size and from different manufacturers. The effective PDE corresponds to the measured $PDE(\lambda)$ convoluted with the emission spectrum of LYSO:Ce crystals, which peaks around 420~nm.
002914564 8564_ $$82625675$$s14423$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_FBK_2E14_vs_Vov.png$$y00018 Time resolution as a function of the SiPM over-voltage for modules with SiPMs of different cell-sizes irradiated to 2$\times$10$^{14}$ \neut. Left: modules with SiPMs from HPK. Right: modules with SiPMs from FBK.
002914564 8564_ $$82625676$$s13591$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_types_nonIrr_vs_Vov.png$$y00025 Time resolution as a function of the over-voltage for modules of different thicknesses (represented by green, blue, and red lines for T1, T2, and T3 modules, respectively). Modules were rotated by an angle of 64$^{\circ}$ compared to the beam direction to emulate the energy deposition in the crystals expected in the outer pseudorapidity region ($|\eta| > 1.15$) of the BTL detector, as described in the MTD TDR~\cite{CMS_MTD_TDR}. Results are shown for both non irradiated (left) and irradiated to $2\times10^{14}$ \neut~ (right) modules.
002914564 8564_ $$82625677$$s7307873$$uhttp://cds.cern.ch/record/2914564/files/module+FETB.png$$y00004 Top: picture of LYSO arrays of T1 (3.75 mm thickness), T2 (3.00 mm thickness) and T3 (2.40 mm thickness) from left to right. Bottom left: picture of three BTL modules after and before gluing of the SiPM arrays to the crystal array. Bottom right: picture of a module with the flex cables connected to the front end board and with the SiPM back side coupled thermally to a aluminum heat sink used during the test.
002914564 8564_ $$82625678$$s1555$$uhttp://cds.cern.ch/record/2914564/files/exp_setup_scheme.png$$y00010 Top: picture of the cold box installed on the H8 beam line at the SPS CERN facility (left) and of the experimental setup inside the box consisting of the reference module, the module under test (right). Bottom: schematic plan view of the experimental setup showing the rotation of the module under test with respect to the beam direction.
002914564 8564_ $$82625679$$s29780$$uhttp://cds.cern.ch/record/2914564/files/c_DCR_irradiation_ALDOAve.png$$y00006 Single SiPM dark count rate as a function of the SiPM over-voltage for different configurations tested: (a) T2 modules with SiPMs of different cell-size (15, 20, 25, 30~$\rm\mu m$) irradiated to $2\times10^{14}$~\neut; (b) T1 modules with 25~$\rm\mu m$ cell-size SiPMs irradiated to different fluences ($1\times10^{13}$, $1\times10^{14}$, $2\times10^{14}$~\neut); (c) T2 module with 25~$\rm\mu m$ cell-size HPK SiPMs irradiated to $2\times10^{14}$~\neut for different operating temperatures; (d) T2 modules with 25~$\rm\mu m$ cell-size SiPMs from HPK and FBK irradiated to $2\times10^{14}$~\neut. The SiPM arrays underwent the same annealing sequence, as described in the text.
002914564 8564_ $$82625680$$s36703$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_2E14_vs_th.png$$y00014 Time resolution as a function of the leading edge discrimination threshold for different values of the SiPM over-voltage. Left: T2 module with non-irradiated SiPMs. Right: T2 module with SiPMs irradiated to $2\times10^{14}$ \neut ~ operated at a temperature of $-35^\circ$C to emulate the DCR level of end-of-operation conditions.
002914564 8564_ $$82625681$$s15232$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_1E13_T1_temperatures_vs_Vov.png$$y00029 Time resolution of three T1 modules (3.75~mm thick crystals) constructed using SiPM arrays with 25~$\mu$m and irradiated to different levels: $1\times10^{13}$~\neut~ (top), $1\times10^{14}$~\neut~ (middle), $2\times10^{14}$~\neut~ (bottom). All SiPMs underwent the same annealing. The time resolution is shown as a function of the over-voltage on the left column and as a function of static power of the SiPM on the right column. Different operating temperatures are compared around a temperature that yields a DCR level equivalent to the nominal BTL operating conditions (defined by irradiation level, annealing history and operating temperature).
002914564 8564_ $$82625682$$s15953$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_2E14_cellSizes_vs_Vov.png$$y00017 Time resolution as a function of the SiPM over-voltage for modules with SiPMs of different cell-sizes irradiated to 2$\times$10$^{14}$ \neut. Left: modules with SiPMs from HPK. Right: modules with SiPMs from FBK.
002914564 8564_ $$82625683$$s15776$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_1E13_T1_temperatures_vs_staticPower.png$$y00030 Time resolution of three T1 modules (3.75~mm thick crystals) constructed using SiPM arrays with 25~$\mu$m and irradiated to different levels: $1\times10^{13}$~\neut~ (top), $1\times10^{14}$~\neut~ (middle), $2\times10^{14}$~\neut~ (bottom). All SiPMs underwent the same annealing. The time resolution is shown as a function of the over-voltage on the left column and as a function of static power of the SiPM on the right column. Different operating temperatures are compared around a temperature that yields a DCR level equivalent to the nominal BTL operating conditions (defined by irradiation level, annealing history and operating temperature).
002914564 8564_ $$82625684$$s16066$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_components_15_2E14_cellSizes_vs_Vov.png$$y00021 Time resolution as a function of over-voltage for T2 modules made with HPK SiPMs of 15~$\mu$m (left) and 25~$\mu$m (right) cell-size, both non-irradiated (top row) and irradiated to 2$\times$10$^{14}$ \neut. The time resolution measured with beam data is shown with black dots, the main contributions to the time resolution are shown by the colored lines: electronics (blue), the photo-statistics (green), and DCR (orange).
002914564 8564_ $$82625685$$s16425$$uhttp://cds.cern.ch/record/2914564/files/c_timeResolution_HPK_nonIrr_vs_th.png$$y00013 Time resolution as a function of the leading edge discrimination threshold for different values of the SiPM over-voltage. Left: T2 module with non-irradiated SiPMs. Right: T2 module with SiPMs irradiated to $2\times10^{14}$ \neut ~ operated at a temperature of $-35^\circ$C to emulate the DCR level of end-of-operation conditions.
002914564 8564_ $$82625686$$s20511$$uhttp://cds.cern.ch/record/2914564/files/pde.png$$y00001 Gain (left) and effective PDE (right) as a function of over-voltage for SiPMs with different cell size and from different manufacturers. The effective PDE corresponds to the measured $PDE(\lambda)$ convoluted with the emission spectrum of LYSO:Ce crystals, which peaks around 420~nm.
002914564 8564_ $$82625687$$s2331266$$uhttp://cds.cern.ch/record/2914564/files/exp_setup_photo2.png$$y00009 Top: picture of the cold box installed on the H8 beam line at the SPS CERN facility (left) and of the experimental setup inside the box consisting of the reference module, the module under test (right). Bottom: schematic plan view of the experimental setup showing the rotation of the module under test with respect to the beam direction.
002914564 8564_ $$82625688$$s28063$$uhttp://cds.cern.ch/record/2914564/files/c_DCR_vendor_ALDOAve.png$$y00008 Single SiPM dark count rate as a function of the SiPM over-voltage for different configurations tested: (a) T2 modules with SiPMs of different cell-size (15, 20, 25, 30~$\rm\mu m$) irradiated to $2\times10^{14}$~\neut; (b) T1 modules with 25~$\rm\mu m$ cell-size SiPMs irradiated to different fluences ($1\times10^{13}$, $1\times10^{14}$, $2\times10^{14}$~\neut); (c) T2 module with 25~$\rm\mu m$ cell-size HPK SiPMs irradiated to $2\times10^{14}$~\neut for different operating temperatures; (d) T2 modules with 25~$\rm\mu m$ cell-size SiPMs from HPK and FBK irradiated to $2\times10^{14}$~\neut. The SiPM arrays underwent the same annealing sequence, as described in the text.
002914564 8564_ $$82702298$$s12872059$$uhttp://cds.cern.ch/record/2914564/files/document.pdf$$yFulltext
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