| Główna > CERN Departments > Physics (PH) > EP-R&D Programme on Technologies for Future Experiments > EP-R&D Programme on Technologies for Future Experiments (EP RDET) > Thermal annealing in silicon photonics ring modulators |
| Article | |
| Title | Thermal annealing in silicon photonics ring modulators |
| Author(s) | Lalović, M (Belgrade, Inst. Phys. ; CERN) ; Detraz, S (CERN) ; Marcon, L (CERN) ; Olanterä, L (CERN) ; Prousalidi, T (CERN ; Natl. Tech. U., Athens) ; Sandven, U (CERN) ; Scarcella, C (CERN) ; Sigaud, C (CERN) ; Soós, C (CERN) ; Troska, J (CERN) |
| Publication | 2023 |
| Number of pages | 7 |
| In: | JINST 18 (2023) C03028 |
| In: | Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C03028 |
| DOI | 10.1088/1748-0221/18/03/C03028 |
| Subject category | Data Analysis and Statistics ; Detectors and Experimental Techniques ; Other |
| Project | CERN-EP-RDET |
| Abstract | Silicon photonics technology promises significant improvements for fibre optic links of future upgrades of HEP experiments. Such systems will require high levels of radiation tolerance and silicon photonics modulators have been shown to be very robust when exposed to high levels of radiation under certain conditions. We demonstrate for the first time that changing the temperature of ring modulators during or after irradiation can significantly improve their performance. |
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