Elsevier B.V. : Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Rinella, Gianluca Aglieri; Šuljić, Miljenko; Huth, Lennart; Musta, Alexander; Contin, Giacomo; Rachevski, Alexandre; Rasà, Marika; Varga, Laszlo; Dannheim, Dominik; Snoeys, Walter; Masciocchi, Silvia; Wennloef, Haakan; Choi, Yongjun; Buttwill, Bent Benedikt; Reidt, Felix; Li, Long; Kushpil, Svetlana; Verdoglia, Michele; Gregor, Ingrid-Maria; Scioli, Gilda; Tiltmann, Nicolas; Kluge, Alex; Vignola, Gianpiero; Vanat, Tomas; Librizzi, Francesco; Saccà, Gaspare; Laojamnongwong, Natthawut; Martinengo, Paolo; Dubla, Andrea; Liu, Jian; Camerini, Paolo; Macchiolo, Anna; Junique, Antoine; Gernhaeuser, Roman; Mager, Magnus; Grodaas, Karl Gran; Křížek, Filip; Colocci, Manuel; Piro, Francesco; Van Beelen, Jacob Bastiaan; Schledewitz, David; Jones, Daniel Matthew; Sturniolo, Alessandro; Lemoine, Corentin; Senyukov, Serhiy; Sanna, Isabella; Ilg, Armin; Witte, Jonathan; Kaewjai, Jetnipit; Mulliri, Alice; Wittwer, Rebekka Bettina; Donner, Maurice Calvin; Schlaadt, Judith; Villani, Anna; Marras, Davide; Mattiazzo, Serena; Kim, Jiyoung; Antonelli, Matias; Ricci, Riccardo; Trifirò, Antonio; Gonella, Laura; Menzel, Marius Wilm; Beole, Stefania Maria; Feindt, Finn; Lemmon, Roy Crawford; Viera, Manuel Del Rio; Egger, Jan; Simancas, Adriana; Usai, Gianluca; Fabbietti, Laura; De Gruttola, Daniele; Rebane, Karoliina; Kotliarov, Artem; Hillemanns, Hartmut; Kucharska, Gabriela; Sarritzu, Valerio; Keil, Markus; Gautam, Kunal; Carnesecchi, Francesca; Mylne, Mia Rose; Eberwein, Gregor Hieronymus; di Mauro, Antonello; Isakov, Artem; Chartier, Marielle; Baccomi, Roberto; Glover, James Julian; La Rocca, Paola; Kobdaj, Chinorat; Kittimanapun, Kritsada; Blidaru, Mihail Bogdan; Lautner, Lukas; Alocco, Giacomo; Daza, Sara Ruiz; Buschmann, Eric; Spannagel, Simon

doi:10.1016/j.nima.2024.169896

Article
Report number	arXiv:2403.08952
Title	Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
Author(s)	Rinella, Gianluca Aglieri (CERN) ; Alocco, Giacomo (INFN, Cagliari) ; Antonelli, Matias (INFN, Trieste) ; Baccomi, Roberto (INFN, Trieste) ; Beole, Stefania Maria (INFN, Turin) ; Blidaru, Mihail Bogdan (Heidelberg U.) ; Buttwill, Bent Benedikt (Heidelberg U.) ; Buschmann, Eric (CERN) ; Camerini, Paolo (Trieste U. ; INFN, Trieste) ; Carnesecchi, Francesca (CERN) ; Chartier, Marielle (Liverpool U.) ; Choi, Yongjun (Pusan Natl. U.) ; Colocci, Manuel (INFN, Bologna) ; Contin, Giacomo (Trieste U. ; INFN, Trieste) ; Dannheim, Dominik (CERN) ; De Gruttola, Daniele (INFN, Salerno) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Dubla, Andrea (Darmstadt, GSI) ; di Mauro, Antonello (CERN) ; Donner, Maurice Calvin (Heidelberg U.) ; Eberwein, Gregor Hieronymus (Oxford U.) ; Egger, Jan (Munich, Tech. U.) ; Fabbietti, Laura (Munich, Tech. U.) ; Feindt, Finn (DESY) ; Gautam, Kunal (Zurich U. ; Vrije U., Brussels) ; Gernhaeuser, Roman (Munich, Tech. U.) ; Glover, James Julian (Birmingham U.) ; Gonella, Laura (Birmingham U.) ; Grodaas, Karl Gran (CERN) ; Gregor, Ingrid-Maria (DESY ; Bonn U.) ; Hillemanns, Hartmut (Birmingham U.) ; Huth, Lennart (Bonn U.) ; Ilg, Armin (Zurich U.) ; Isakov, Artem (Nikhef, Amsterdam) ; Jones, Daniel Matthew (Liverpool U.) ; Junique, Antoine (CERN) ; Kaewjai, Jetnipit (NSRC, Nakhon Ratchasima) ; Keil, Markus (CERN) ; Kim, Jiyoung (Inha U.) ; Kluge, Alex (CERN) ; Kobdaj, Chinorat (NSRC, Nakhon Ratchasima) ; Kotliarov, Artem (Rez, Nucl. Phys. Inst. ; Prague, Tech. U.) ; Kittimanapun, Kritsada (NSRC, Nakhon Ratchasima) ; Křížek, Filip (Rez, Nucl. Phys. Inst.) ; Kucharska, Gabriela (CERN) ; Kushpil, Svetlana (Rez, Nucl. Phys. Inst.) ; La Rocca, Paola (Catania U. ; INFN, Catania) ; Laojamnongwong, Natthawut (NSRC, Nakhon Ratchasima) ; Lautner, Lukas (CERN ; Munich, Tech. U.) ; Lemmon, Roy Crawford (Daresbury) ; Lemoine, Corentin (CERN ; Strasbourg, IPHC) ; Li, Long (Birmingham U.) ; Librizzi, Francesco (INFN, Catania) ; Liu, Jian (Liverpool U.) ; Macchiolo, Anna (Zurich U.) ; Mager, Magnus (CERN) ; Marras, Davide (INFN, Cagliari) ; Martinengo, Paolo (CERN) ; Masciocchi, Silvia (Heidelberg U. ; Darmstadt, GSI) ; Mattiazzo, Serena (INFN, Padua) ; Menzel, Marius Wilm (CERN) ; Mulliri, Alice (INFN, Cagliari) ; Musta, Alexander (Tech. U., Munich (main)) ; Mylne, Mia Rose (Liverpool U.) ; Piro, Francesco (CERN) ; Rachevski, Alexandre (INFN, Trieste) ; Rasà, Marika (Catania U. ; INFN, Catania) ; Rebane, Karoliina (CERN) ; Reidt, Felix (CERN) ; Ricci, Riccardo (INFN, Salerno) ; Daza, Sara Ruiz (DESY ; Bonn U.) ; Saccà, Gaspare (INFN, Catania) ; Sanna, Isabella (CERN ; Munich, Tech. U.) ; Sarritzu, Valerio (INFN, Cagliari) ; Schlaadt, Judith (DESY ; Mainz U.) ; Schledewitz, David (Heidelberg U.) ; Scioli, Gilda (INFN, Bologna) ; Senyukov, Serhiy (Strasbourg, IPHC) ; Simancas, Adriana (DESY ; Bonn U.) ; Snoeys, Walter (CERN) ; Spannagel, Simon (DESY) ; Šuljić, Miljenko (CERN) ; Sturniolo, Alessandro (Messina U. ; INFN, Catania) ; Tiltmann, Nicolas (CERN) ; Trifirò, Antonio (Messina U. ; INFN, Catania) ; Usai, Gianluca (INFN, Cagliari) ; Vanat, Tomas (DESY) ; Van Beelen, Jacob Bastiaan (CERN) ; Varga, Laszlo (Munich, Tech. U.) ; Verdoglia, Michele (Trieste U. ; INFN, Trieste) ; Vignola, Gianpiero (DESY ; Bonn U.) ; Villani, Anna (Trieste U. ; INFN, Trieste) ; Wennloef, Haakan (DESY) ; Witte, Jonathan (Liverpool U. ; Tubingen U.) ; Wittwer, Rebekka Bettina (Zurich U.)
Publication	2024-09-21
Imprint	2024-03-13
Number of pages	40
In:	Nucl. Instrum. Methods Phys. Res., A 1069 (2024) 169896
DOI	10.1016/j.nima.2024.169896 (publication)
Subject category	physics.ins-det ; Detectors and Experimental Techniques
Abstract	Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10-25 $\mu$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations.
Copyright/License	preprint: (License: CC BY 4.0) publication: © 2024 The Authors (License: CC BY 4.0)