CERN Accelerating science

Article
Title	Growth of Nb films on Cu for superconducting radio frequency cavities by direct current and high power impulse magnetron sputtering: A molecular dynamics and experimental study
Author(s)	Ghaemi, M (Helsinki Inst. of Phys.) ; Lopez-Cazalilla, A (Helsinki Inst. of Phys.) ; Sarakinos, K (Helsinki U. ; Royal Inst. Tech., Stockholm) ; Rosaz, G J (CERN) ; Carlos, C P A (CERN) ; Leith, S (CERN) ; Calatroni, S (CERN) ; Himmerlich, M (CERN) ; Djurabekova, F (Helsinki Inst. of Phys.)
Publication	2024
Number of pages	11
In:	Surf. Coat. Technol. 476 (2024) 130199
DOI	10.1016/j.surfcoat.2023.130199
Subject category	Accelerators and Storage Rings
Abstract	The use of superconducting radio frequency (rf) cavities in particle accelerators necessitates that copper (Cu) surfaces are coated by thin niobium (Nb) films, predominantly synthesized by magnetron sputtering. A key feature of the rf cavities is that they exhibit a complex three-dimensional geometry, such that during Nb film growth vapor is not deposited on a flat substrate. The latter, combined with the line-of-sight nature of the deposition flux in conventional magnetron sputtering methods (including direct current magnetron sputtering; DCMS) yields films with porous columnar morphologies on surfaces of the cavities that do not face the magnetron source. High-power impulse magnetron sputtering (HiPIMS) is a variant of sputtering that generates highly-ionized fluxes. Using electrical fields, such fluxes can be deflected to trajectories that are closer to the substrate normal and, thereby, dense and uniform layers can be deposited on all surfaces of the rf cavities. In the present work, we use classical molecular dynamics simulations to model Nb film growth on Cu substrates at conditions consistent with those prevailing during DCMS and HiPIMS. Our computational results are in qualitative agreement with experimental data (also generated in the present study), with respect to film morphology. Based on this agreement and by studying the evolution of the simulated systems, we suggest that the morphology of HiPIMS-grown films (as compared to their DCMS counterparts) is the result of the combined effects of deflection of ionized sputtered particles to trajectories parallel to the substrate normal, bombardment-induced interruption of crystal growth, and ballistic atomic rearrangement along with dynamic thermal annealing caused by energetic film-forming species. Moreover, the predictions of our model with respect to dynamic processes at the film-substrate interface and their effect on local epitaxial growth are discussed
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