CERN Accelerating science

Article
Title Hydrogen passivation of cd acceptors in III–V semiconductors studied by PAC spectroscopy
Author(s)

Forkel-Wirth, Doris (Erlangen - Nuremberg U.) ; Achtziger, N (Erlangen - Nuremberg U.) ; Burchard, A (Konstanz U.) ; Correia, J C (Lisbon U., CFNUL ; CERN) ; Deicher, M (Konstanz U.) ; Licht, T (Erlangen - Nuremberg U.) ; Magerle, R (Konstanz U.) ; Marques, J G (Lisbon U., CFNUL) ; Meier, J (Erlangen - Nuremberg U.) ; Pfeiffer, W (Konstanz U.) ; Reislthner, U (Helmholtz Inst., Jena) ; Riib, M (Erlangen - Nuremberg U.) ; Toulemonde, M (CERN) ; Witthuhn, W (Helmholtz Inst., Jena)

Publication 1995
Number of pages 6
In: Solid State Commun. 93 (1995) 425-430
DOI 10.1016/0038-1098(94)00811-6
Subject category Detectors and Experimental Techniques ; Nuclear Physics - Experiment
Accelerator/Facility, Experiment CERN ISOLDE
Abstract Formation, structure, and stability of hydrogen correlated complexes, created at Cd acceptors in GaP, InP, and InAs have been studied after plasma charging as well as after H+ and/or He+ implantation at different energies. The different complexes were monitored by the perturbed angular correlation technique (PAC). In InP and Gap, the stability of Cd-H pairs is very similar for comparable Cd concentrations (ED = 1.4(2) eV and ED = 1.5(1) eV). In InAs, two different hydrogen correlated configurations are observed, one could be identified as Cd-H pair, oriented in 〈111〉 lattice direction (νQ = 427 MHz, η = 0). The second complex involves at least one H atom and radiation defects or, favoured by a defect induced, secondary mechanism several hydrogen atoms.
Copyright/License © 1995 Published by Elsevier Ltd.

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