| 主頁 > CERN Departments > Physics (PH) > EP-R&D Programme on Technologies for Future Experiments > EP-R&D Programme on Technologies for Future Experiments (EP RDET) > Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology |
| Article | |
| Title | Charge sensing properties of monolithic CMOS pixel sensors fabricated in a 65 nm technology |
| Author(s) | Bugiel, Szymon (Strasbourg, IPHC) ; Dorokhov, Andrei (Strasbourg, IPHC) ; Aresti, Mauro (INFN, Cagliari) ; Baudot, Jerome (Strasbourg, IPHC) ; Beole, Stefania (INFN, Turin) ; Besson, Auguste (Strasbourg, IPHC) ; Bugiel, Roma (Strasbourg, IPHC) ; Cecconi, Leonardo (CERN) ; Colledani, Claude (Strasbourg, IPHC) ; Deng, Wenjing (CERN ; CCNU, Wuhan, Inst. Part. Phys.) ; Di Mauro, Antonello (CERN) ; Bitar, Ziad El (Strasbourg, IPHC) ; Goffe, Mathieu (Strasbourg, IPHC) ; Hasenbichler, Jan (CERN ; TU Vienna) ; Hong, Geun Hee (CERN ; Yonsei U.) ; Hu-Guo, Christine (Strasbourg, IPHC) ; Jaaskelainen, Kimmo (Strasbourg, IPHC) ; Kluge, Alex (CERN) ; Mager, Magnus (CERN) ; Marras, Davide (INFN, Cagliari) ; de Melo, Joao (CERN) ; Munker, Magdalena (CERN) ; Pham, Hung (Strasbourg, IPHC) ; Piro, Francesco (CERN ; EPFL, Lausanne, FSL) ; Reidt, Felix (CERN) ; Rinella, Gianluca Aglieri (CERN) ; Russo, Roberto (Nikhef, Amsterdam) ; Sarritzu, Valerio (Cagliari U. ; INFN, Cagliari) ; Senyukov, Serhiy (Strasbourg, IPHC) ; Snoeys, Walter (CERN) ; Suljic, Miljenko (CERN) ; Usai, Gianluca (Cagliari U. ; INFN, Cagliari) ; Valin, Isabelle (Strasbourg, IPHC) ; Winter, Marc (IJCLab, Orsay) ; Wu, Yitao (Strasbourg, IPHC ; USTC, Hefei) |
| Publication | 2022 |
| Number of pages | 4 |
| In: | Nucl. Instrum. Methods Phys. Res., A 1040 (2022) pp.167213 |
| In: | Vienna Conference on Instrumentation (VCI 2022), Online, Austria, 21 - 25 Feb 2022, pp.167213 |
| DOI | 10.1016/j.nima.2022.167213 (publication) |
| Subject category | Detectors and Experimental Techniques |
| Project | CERN-EP-RDET |
| Abstract | In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise matrices of 64 $\times$ 32 square analogue-output pixels with a pitch of 15 $\mu$m. Different pixel types explore several sensing node geometries and amplification schemes, which allows for various biasing voltage of the detection layer and hence depletion conditions and electric field shaping. Laboratory tests conducted with a $^{55}$Fe source demonstrated that the CE-65 sensors reach equivalent noise charge in the 15 to 25 $e^-$ range and excellent charge collection efficiencies. Charge sharing is substantial for standard diodes, but can be largely suppressed by modifying their design. Depletion of the thin sensitive layer saturates at a reverse diode bias of about 5 V. |
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