002813215 001__ 2813215 002813215 005__ 20220622220118.0 002813215 0248_ $$aoai:cds.cern.ch:2813215$$pcerncds:FULLTEXT 002813215 037__ $$aATL-ITK-SLIDE-2022-232 002813215 041__ $$aeng 002813215 088__ $$9ATL-COM-ITK-2022-023 002813215 100__ $$0AUTHOR|(SzGeCERN)818655$$0AUTHOR|(CDS)2242425$$aLatonova, [email protected]$$uCzech Academy of Sciences (CZ) 002813215 110__ $$aThe ATLAS collaboration 002813215 245__ $$aCharacterization of the Polysilicon Resistor in Silicon Strip Sensors for ATLAS Inner Tracker as a Function of Temperature, Pre- And Post-Irradiation 002813215 260__ $$c2022 002813215 269__ $$aGeneva$$bCERN$$c22 Jun 2022 002813215 300__ $$a1 p 002813215 520__ $$aThe high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected total integrated luminosity of $4000\, \mathrm{fb}^{−1}$ means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of $1.6 \cdot 10^{15}$ $1\, \mathrm{MeV}$ $\mathrm{n_{eq}/cm^2}$ and $0.66\, \mathrm{MGy}$, respectively, including a safety factor of $1.5$. Radiation hard n${}^+$-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n${}^+$ implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We will discuss the contributions by parameterizing the excitation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips. 002813215 594__ $$aSLIDE 002813215 595__ $$aCERN CDS-Invenio WebSubmit 002813215 65017 $$2SzGeCERN$$aParticle Physics - Experiment 002813215 65027 $$2SzGeCERN$$aITK 002813215 690C_ $$aCERN 002813215 690C_ $$aINTNOTE 002813215 690C_ $$aPRIVATLAS 002813215 690C_ $$aPUBLATLASSLIDE 002813215 693__ $$aCERN LHC$$eATLAS 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00147775$$0AUTHOR|(SzGeCERN)369939$$0AUTHOR|(CDS)2073924$$aAllport, Philip [email protected]$$uUniversity of Birmingham (GB) 002813215 700__ $$0AUTHOR|(CDS)2729985$$0AUTHOR|(SzGeCERN)849155$$aBach Marques, [email protected]$$uConsejo Superior de Investigaciones Cientificas (CSIC) (ES) 002813215 700__ $$0AUTHOR|(CDS)2070978$$0AUTHOR|(SzGeCERN)374358$$aBernabeu Alberola, [email protected]$$uUniv. of Valencia and CSIC (ES) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00236049$$0AUTHOR|(SzGeCERN)684051$$0AUTHOR|(CDS)2081176$$aChisholm, Andrew [email protected]$$uUniversity of Birmingham (GB) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00073566$$0AUTHOR|(SzGeCERN)382608$$0AUTHOR|(CDS)2067990$$aCindro, [email protected]$$uJozef Stefan Institute (SI) 002813215 700__ $$0AUTHOR|(CDS)2072888$$0AUTHOR|(SzGeCERN)574317$$aFadeyev, [email protected]$$uUniversity of California,Santa Cruz (US) 002813215 700__ $$0AUTHOR|(CDS)2749247$$0AUTHOR|(SzGeCERN)851008$$aFedericova, [email protected]$$uCzech Academy of Sciences (CZ) 002813215 700__ $$0AUTHOR|(CDS)2100810$$0AUTHOR|(SzGeCERN)783270$$aFernandez-Tejero, [email protected]$$uSimon Fraser University (CA) 002813215 700__ $$0AUTHOR|(CDS)2706873$$0AUTHOR|(SzGeCERN)845873$$aGeorge, William [email protected]$$uUniversity of Birmingham (GB) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00001730$$0AUTHOR|(SzGeCERN)644697$$0AUTHOR|(CDS)2072820$$aGonella, [email protected]$$uUniversity of Birmingham (GB) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00300064$$0AUTHOR|(SzGeCERN)399121$$0AUTHOR|(CDS)2073865$$aHara, [email protected]$$uUniversity of Tsukuba (JP) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00397535$$0AUTHOR|(SzGeCERN)723556$$0AUTHOR|(CDS)2286850$$aHirose, [email protected]$$uUniversity of Tsukuba (JP) 002813215 700__ $$0AUTHOR|(CDS)2764856$$0AUTHOR|(SzGeCERN)852365$$aIshii, [email protected]$$uHigh Energy Accelerator Research Organization (JP) 002813215 700__ $$0AUTHOR|(CDS)2639687$$0AUTHOR|(SzGeCERN)833972$$aKnight, Timothy [email protected]$$uUniversity of Toronto (CA) 002813215 700__ $$0AUTHOR|(CDS)2308276$$0AUTHOR|(SzGeCERN)828841$$aKopsalis, [email protected]$$uUniversity of Birmingham (GB) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00524985$$0AUTHOR|(SzGeCERN)710113$$0AUTHOR|(CDS)2080604$$aKroll, [email protected]$$uCzech Academy of Sciences (CZ) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00236773$$0AUTHOR|(SzGeCERN)693713$$0AUTHOR|(CDS)2075524$$aKvasnicka, [email protected]$$uCzech Academy of Sciences (CZ) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00099524$$0AUTHOR|(SzGeCERN)407046$$0AUTHOR|(CDS)2070981$$aLacasta Llacer, [email protected]$$uUniv. of Valencia and CSIC (ES) 002813215 700__ $$0AUTHOR|(CDS)2782116$$0AUTHOR|(SzGeCERN)855429$$aLomas, Joshua [email protected]$$uUniversity of Birmingham (GB) 002813215 700__ $$0AUTHOR|(CDS)2067984$$0AUTHOR|(SzGeCERN)412021$$aMandic, [email protected]$$uJozef Stefan Institute (SI) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00220462$$0AUTHOR|(SzGeCERN)438302$$0AUTHOR|(CDS)2075518$$aMikestikova, [email protected]$$uCzech Academy of Sciences (CZ) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00113411$$0AUTHOR|(SzGeCERN)419625$$0AUTHOR|(CDS)2072461$$aOrr, [email protected]$$uUniversity of Toronto (CA) 002813215 700__ $$0AUTHOR|(CDS)2155579$$0AUTHOR|(SzGeCERN)803592$$aRossi, [email protected] 002813215 700__ $$0AUTHOR|(CDS)2090770$$0AUTHOR|(SzGeCERN)756100$$aSolaz Contell, [email protected]$$uUniv. of Valencia and CSIC (ES) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00232570$$0AUTHOR|(SzGeCERN)693241$$0AUTHOR|(CDS)2079898$$aSoldevila Serrano, [email protected]$$uUniv. of Valencia and CSIC (ES) 002813215 700__ $$0AUTHOR|(CDS)2070637$$0AUTHOR|(SzGeCERN)484190$$aUllan, [email protected]$$uConsejo Superior de Investigaciones Cientificas (CSIC) (ES) 002813215 700__ $$0AUTHOR|(INSPIRE)INSPIRE-00133014$$0AUTHOR|(SzGeCERN)437347$$0AUTHOR|(CDS)2072544$$aUnno, [email protected]$$uHigh Energy Accelerator Research Organization (JP) 002813215 710__ $$5PH-EP 002813215 710__ $$gATLAS Collaboration 002813215 8564_ $$uhttp://cds.cern.ch/record/2809464$$yOriginal Communication (restricted to ATLAS) 002813215 8564_ $$82374029$$s130037$$uhttp://cds.cern.ch/record/2813215/files/PISA22-Rbias-summary.pdf 002813215 8564_ $$82374030$$s752999$$uhttp://cds.cern.ch/record/2813215/files/ATL-ITK-SLIDE-2022-232.pdf 002813215 859__ [email protected] 002813215 916__ $$sn$$w202270 002813215 960__ $$a91 002813215 962__ $$b2808390$$nla biodola - isola d'elba20220522 002813215 963__ $$aPUBLIC 002813215 970__ $$a000775842CER 002813215 980__ $$aPUBLATLASSLIDE 002813215 980__ $$aSlides