CERN Accelerating science

Published Articles
Report number	arXiv:2005.14161
Title	Time resolution and power consumption of a monolithic silicon pixel prototype in SiGe BiCMOS technology
Author(s)	Paolozzi, L. (Geneva U.) ; Cardarelli, R. (INFN, Rome2) ; Débieux, S. (Geneva U.) ; Favre, Y. (Geneva U.) ; Ferrère, D. (Geneva U.) ; Gonzalez-Sevilla, S. (Geneva U.) ; Iacobucci, G. (Geneva U.) ; Kaynak, M. (IHP, Frankfurt) ; Martinelli, F. (CERN ; Ecole Polytechnique, Lausanne) ; Nessi, M. (CERN) ; Rücker, H. (IHP, Frankfurt) ; Sanna, I. (Turin U.) ; Sultan, DMS (Geneva U.) ; Valerio, P. (Geneva U.) ; Zaffaroni, E. (Geneva U.)
Publication	2020-11-13
Imprint	2020-05-28
Number of pages	12
In:	JINST 15 (2020) P11025
DOI	10.1088/1748-0221/15/11/P11025
Subject category	physics.ins-det ; Detectors and Experimental Techniques
Abstract	SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of the main factors that may degrade the timing performance and the characterisation of the dependance of the sensor time resolution on the amplifier power consumption. Measurements with a $ \mathrm{^{90}Sr} $ source of a prototype sensor produced in SG13G2 technology from IHP Microelectronics, shows a time resolution of 140 ps at an amplifier current of 7 $ \mathrm{\mu} $A and 45 ps at higher power consumption. A full simulation shows that the resolution on the measurement of the signal time-over-threshold, used to correct for time walk, is the main factor affecting the timing performance.
Copyright/License	preprint: (License: arXiv nonexclusive-distrib 1.0) publication: © 2020 CERN (License: CC-BY-4.0)

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