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| Published Articles | |
| Title | A new generation of radiation hard 3D pixel sensors for the ATLAS upgrade |
| Author(s) | Terzo, Stefano (Barcelona, IFAE) ; Grinstein, Sebastian (Barcelona, IFAE ; ICREA, Barcelona) ; Manna, Maria (Barcelona, Inst. Microelectron.) ; Pellegrini, Giulio (Barcelona, Inst. Microelectron.) ; Quirion, David (Barcelona, Inst. Microelectron.) |
| Publication | 2020 |
| Number of pages | 4 |
| In: | Nucl. Instrum. Methods Phys. Res., A 982 (2020) 164587 |
| DOI | 10.1016/j.nima.2020.164587 |
| Subject category | Detectors and Experimental Techniques |
| Accelerator/Facility, Experiment | CERN LHC ; ATLAS |
| Abstract | The ATLAS experiment at the Large Hadron Collider (LHC) will replace its inner tracker system to cope with the extreme particle fluence expected after the High Luminosity upgrade of the accelerator (HL-LHC). The 3D silicon sensor technology has been selected as baseline to instrument the innermost layer of the pixel detector in the future ATLAS Inner Tracker (ITk). A new generation of 3D pixel sensors with thin active substrates and small pixel cells of $(50×50) μ m^2$ and $(25×100) μ m^2$ produced at CNM in Spain, have been interconnected to the RD53A chip, the first prototype of ASIC for the HL-LHC. Performance of these new 3D RD53A modules have been studied before and after uniform proton irradiation up to $1 × 10^{16} \mathrm{n_{eq}/cm}^2$ , i.e. a particle fluence close to the one expected for the innermost layer of ITk. The first results of the power dissipation and hit efficiency for uniformly irradiated 3D RD53A devices will be presented. These revealed a superior radiation hardness of these novel pixel sensors. |
| Copyright/License | © 2020 Elsevier B.V. |