002729051 001__ 2729051
002729051 003__ SzGeCERN
002729051 005__ 20220817145921.0
002729051 0247_ $$2DOI$$9IEEE$$a10.23919/MIXDES.2019.8787098
002729051 0248_ $$aoai:inspirehep.net:1767027$$pcerncds:CERN$$qINSPIRE:HEP$$qForCDS
002729051 035__ $$9http://old.inspirehep.net/oai2d$$aoai:inspirehep.net:1767027$$d2020-08-26T14:45:10Z$$h2020-08-28T06:30:17Z$$mmarcxml
002729051 035__ $$9Inspire$$a1767027
002729051 041__ $$aeng
002729051 100__ $$aNikolaou, Aristeidis$$uCrete, Tech. U.
002729051 245__ $$9IEEE$$aForward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose
002729051 260__ $$bIEEE$$c2019
002729051 300__ $$a4 p
002729051 520__ $$9IEEE$$aFrond-end electronics at the High Luminosity-Large Hadron Collider (HL-LHC) at CERN, will be exposed to ten-fold radiation doses. The use of enclosed gate (EG) MOSFETs of 65 nm Bulk CMOS process, is considered to be a viable solution in order to suppress performance degradation effects that occur after high TID exposure. The present paper presents a detailed analysis of the functionality of EG MOSFETs operating under high TID, taking into accountspecific layout characteristics.
002729051 542__ $$3publication$$dDepartment of Microelectronics & Computer Science, Lodz University of Technology$$g2019
002729051 65017 $$2SzGeCERN$$aDetectors and Experimental Techniques
002729051 6531_ $$9author$$aMOS devices
002729051 6531_ $$9author$$aThreshold voltage
002729051 6531_ $$9author$$aIntegrated circuits
002729051 6531_ $$9author$$aLogic gates
002729051 6531_ $$9author$$aHafnium
002729051 6531_ $$9author$$aCMOS integrated circuits
002729051 6531_ $$9author$$aMOSFET
002729051 6531_ $$9author$$aradiation hardening (electronics)
002729051 6531_ $$9author$$afrond-end electronics
002729051 6531_ $$9author$$aHigh Luminosity-Large Hadron Collider
002729051 6531_ $$9author$$aHL-LHC
002729051 6531_ $$9author$$aCERN
002729051 6531_ $$9author$$aperformance degradation effects
002729051 6531_ $$9author$$atotal ionizing dose
002729051 6531_ $$9author$$aradiation doses
002729051 6531_ $$9author$$abulk CMOS process
002729051 6531_ $$9author$$aTID exposure
002729051 6531_ $$9author$$aEG MOSFET
002729051 6531_ $$9author$$aenclosed gate MOSFET
002729051 6531_ $$9author$$asize 65.0 nm
002729051 6531_ $$9author$$aEnclosed layout
002729051 6531_ $$9author$$ahigh energy physics
002729051 6531_ $$9author$$aHigh-Luminosity Large Hadron Collider
002729051 6531_ $$9author$$aMOSFETs
002729051 6531_ $$9author$$aradiation hardness
002729051 6531_ $$9author$$atotal ionizing dose.
002729051 690C_ $$aCERN
002729051 693__ $$pCERN HL-LHC
002729051 700__ $$aChevas, Loukas$$uCrete, Tech. U.
002729051 700__ $$aPapadopoulou, Alexia$$uCrete, Tech. U.
002729051 700__ $$aMakris, Nikolaos$$uCrete, Tech. U.
002729051 700__ $$aBucher, Matthias$$uCrete, Tech. U.
002729051 700__ $$aBorghello, Giulio$$uUdine U.
002729051 700__ $$aFaccio, Federico$$uCERN
002729051 773__ $$01766735$$c306-309$$wC19-06-27.1$$y2019
002729051 960__ $$a13
002729051 962__ $$b2728354$$k306-309$$nrzeszow20190627
002729051 980__ $$aARTICLE
002729051 980__ $$aConferencePaper