| Preprint | |
| Report number | CERN-RD53-PUB-20-001 |
| Title | DRAD results obtained during irradiation campaigns |
| Related | Supersedes: CERN-RD53-NOTE-17-001 |
| Author(s) | Jara Casas, Luis Miguel (CERN) |
| Publication | 2020 |
| Collaboration | RD53 Collaboration |
| Imprint | 2020-07-30 |
| Number of pages | 210 |
| Accelerator/Facility, Experiment | RD53 |
| Keywords | TID ; Test Chip ; 65nm ; Radiation Damage |
| Abstract | The DRAD chip was designed with the aim of studying the impact of high radiation levels on digital electronics in 65nm CMOS technology, A description of the chip and a summary of the results obtained in the testing is shown in this document. Results cover campaigns after irradiation up to total ionizing doses of 200 Mrad and 500 Mrad at different temperatures. Next versions will cover future irradiation campaigns. |
| Submitted by | [email protected] |
Element opprettet 2020-07-31, sist endret 2020-07-31
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