CERN Accelerating science

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Title	Feasibility Study for NITE SiC/SiC as the Target Material for Pions/Muons Production at High-Power Proton Accelerator Facilities
Author(s)	Makimura, Shunsuke (J-PARC) ; Park, Joon-Soo (Muroran Inst. Tech.) ; Sato, Akira (Osaka U. (main)) ; Matoba, Shiro (J-PARC) ; Kawamura, Naritoshi (J-PARC) ; Yamazaki, Takayuki (J-PARC) ; Ninomiya, Kazuhiko (Osaka U. (main)) ; Tomono, Dai (Osaka U., Res. Ctr. Nucl. Phys.) ; Nakazato, Naofumi (Muroran Inst. Tech.) ; Calviani, Marco (CERN) ; Lamas Garcia, Inigo (CERN)
Publication	2020
Number of pages	6
In:	JPS Conf. Proc. 28 (2020) 031005
In:	14th International Workshop on Spallation Materials Technology, Fukushima, Japan, 11 - 17 Nov 2018, pp.031005
DOI	10.7566/JPSCP.28.031005
Subject category	Accelerators and Storage Rings
Accelerator/Facility, Experiment	CERN SPS
Abstract	The feasibility study for Nano-Infiltration and Transient Eutectic phase process SiC/SiC (NITE SiC/SiC)NITE SiC/SiC as a potential novel target material for pions/muons production at high-power proton accelerators facilities is in progress. Compared with graphite that is the principal target material for pions/muons production, higher transport efficiency and higher oxidation resistance can be expected. However, the residual radiation dose of NITE SiC/SiC is 400 times higher than that of graphite a year after the irradiation. To validate the simulation, the residual radionuclides of the irradiated samples have been analyzed by gamma-ray spectroscopy. To understand the thermal shock behavior, NITE-SiC/SiC was included in the HRMT35 experiment at CERN’s HiRadMat facility. In these studies, NITE SiC/SiC is proved to be a promising material for pions/muons production with the higher transport efficiency and the oxidation resistance, though the maintenance scenario has to be carefully designed due to higher residual radiation dose. The thermal shock resistance and proton-irradiation resistance of NITE SiC/SiC will be confirmed to be applied for the pions/muons production.
Copyright/License	© 2020 The Author(s) (License: CC-BY-4.0)

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