002622271 001__ 2622271
002622271 003__ SzGeCERN
002622271 005__ 20180608215012.0
002622271 0247_ $$2DOI$$9IEEE$$a10.1109/NSSMIC.2016.8069869
002622271 0248_ $$aoai:inspirehep.net:1637974$$pcerncds:CERN$$qINSPIRE:HEP$$qForCDS
002622271 035__ $$9http://inspirehep.net/oai2d$$aoai:inspirehep.net:1637974$$d2018-06-07T14:29:10Z$$h2018-06-08T04:00:14Z$$mmarcxml
002622271 035__ $$9Inspire$$a1637974
002622271 041__ $$aeng
002622271 100__ $$aZhang, C [email protected]$$uEcole Polytechnique, Lausanne
002622271 245__ $$9IEEE$$aGigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
002622271 260__ $$c2017
002622271 300__ $$a4 p
002622271 520__ $$9IEEE$$aThe DC performance of both $n$- and $p$MOSFETs fabricated in a commercial-grade 28 nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation annealing. The aim is to assess the potential use of such an advanced CMOS technology in the forthcoming upgrade of the Large Hadron Collider at CERN. The total ionizing dose effects show limited influence in the drive current of all the tested nMOSFETs. Nonetheless, the leakage current increases significantly, affecting the normal device operation of the nMOSFETs. These phenomena can be linked to the charge trapping in the oxides and at the Si/oxide interfaces, related to both the gate oxide and the shallow trench isolation oxide. In addition, it has been observed that the radiation-induced effects are partly recovered by the long-term post-irradiation annealing. To quantify the total ionizing dose effects on DC characteristics, the threshold voltage, subthreshold swing, and drain induced barrier lowering have also been extracted for $n$MOSFETs.
002622271 65017 $$2SzGeCERN$$aDetectors and Experimental Techniques
002622271 6531_ $$9author$$aMOSFET
002622271 6531_ $$9author$$aAnnealing
002622271 6531_ $$9author$$aLeakage currents
002622271 6531_ $$9author$$aThreshold voltage
002622271 6531_ $$9author$$aTotal ionizing dose
002622271 6531_ $$9author$$aLogic gates
002622271 6531_ $$9author$$aannealing
002622271 6531_ $$9author$$aelemental semiconductors
002622271 6531_ $$9author$$aleakage currents
002622271 6531_ $$9author$$aradiation effects
002622271 6531_ $$9author$$asilicon
002622271 6531_ $$9author$$aGigaRad total ionizing dose
002622271 6531_ $$9author$$apost-irradiation effects
002622271 6531_ $$9author$$acommercial-grade 28 nm bulk CMOS process
002622271 6531_ $$9author$$aadvanced CMOS technology
002622271 6531_ $$9author$$atotal ionizing dose effects
002622271 6531_ $$9author$$anMOSFETs
002622271 6531_ $$9author$$aSi/oxide interfaces
002622271 6531_ $$9author$$ashallow trench isolation oxide
002622271 6531_ $$9author$$aradiation-induced effects
002622271 6531_ $$9author$$along-term post-irradiation annealing
002622271 6531_ $$9author$$apMOSFET
002622271 6531_ $$9author$$adrive current
002622271 6531_ $$9author$$aleakage current
002622271 6531_ $$9author$$acharge trapping
002622271 6531_ $$9author$$asize 28.0 nm
002622271 6531_ $$9author$$aSi
002622271 6531_ $$9author$$aTID
002622271 6531_ $$9author$$a28 nm bulk CMOS
002622271 6531_ $$9author$$agate oxide
002622271 6531_ $$9author$$ashallow trench isolation
002622271 6531_ $$9author$$aHL-LHC
002622271 690C_ $$aCERN
002622271 700__ $$aJazaeri, F$$uEcole Polytechnique, Lausanne
002622271 700__ $$aPezzotta, A$$uEcole Polytechnique, Lausanne
002622271 700__ $$aBruschini, C$$uEcole Polytechnique, Lausanne
002622271 700__ $$aBorghello, G$$uU. Udine (main)$$uCERN
002622271 700__ $$aFaccio, F$$uCERN
002622271 700__ $$aMattiazzo, S$$uU. Padua (main)
002622271 700__ $$aBaschirotto, A$$uMilan Bicocca U.
002622271 700__ $$aEnz, C$$uEcole Polytechnique, Lausanne
002622271 773__ $$c8069869$$wC16-10-29$$y2016
002622271 960__ $$a13
002622271 962__ $$b2143816$$k8069869$$nstrasbourg20161029
002622271 980__ $$aARTICLE
002622271 980__ $$aConferencePaper
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002622271 999C6 $$a0-0-1-1-0-0-0$$t2018-03-09 12:11:16$$vInvenio/1.1.2.1260-aa76f refextract/1.5.44