CERN Accelerating science

Article
Report number	CERN-OPEN-2017-022
Title	Lattice location of implanted transition metals in 3C–SiC
Author(s)	Granadeiro Costa, Angelo Rafael (Universidade de Lisboa (PT)) ; Wahl, Ulrich (Universidade de Lisboa (PT)) ; Martins Correia, Joao (Universidade de Lisboa (PT)) ; David Bosne, Eric (Universidade de Lisboa (PT)) ; Amorim, Lígia (KU Leuven (BE)) ; Silva, Daniel (Universidade do Porto (PT)) ; Castro Ribeiro Da Silva, Manuel (Universidade de Lisboa (PT)) ; Bharuth-Ram, Krishanlal (University of Kwazulu - Natal (ZA)) ; Da Costa Pereira, Lino Miguel (KU Leuven (BE))
Collaboration	EC-SLI Collaboration
Publication	2017
Imprint	03 May 2017
Number of pages	11
In:	J. Phys. D 50 (2017) 215101
DOI	10.1088/1361-6463/aa6878
Subject category	Condensed Matter
Accelerator/Facility, Experiment	CERN ISOLDE ; IS453
Free keywords	lattice location ; emission channeling ; 3C-SiC ; transition metals
Abstract	We have investigated the lattice location of implanted transition metal (TM) 56Mn, 59Fe and 65Ni ions in undoped single-crystalline cubic 3C–SiC by means of the emission channeling technique using radioactive isotopes produced at the CERN-ISOLDE facility. We find that in the room temperature as-implanted state, most Mn, Fe and Ni atoms occupy carbon-coordinated tetrahedral interstitial sites (TC). Smaller TM fractions were also found on Si substitutional (SSi) sites. The TM atoms partially disappear from ideal-TC positions during annealing at temperatures between 500 °C and 700 °C, which is accompanied by an increase in the TM fraction occupying both SSi sites and random sites. An explanation is given according to what is known about the annealing mechanisms of silicon vacancies in silicon carbide. The origin of the observed lattice sites and their changes with thermal annealing are discussed and compared to the case of Si, highlighting the feature that the interstitial migration of TMs in SiC is much slower than in Si.

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